CN109407210A - A kind of polarized wave waveguide transmission coupling device and preparation method based on hetero-junctions in face - Google Patents
A kind of polarized wave waveguide transmission coupling device and preparation method based on hetero-junctions in face Download PDFInfo
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- CN109407210A CN109407210A CN201811336502.6A CN201811336502A CN109407210A CN 109407210 A CN109407210 A CN 109407210A CN 201811336502 A CN201811336502 A CN 201811336502A CN 109407210 A CN109407210 A CN 109407210A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Abstract
The invention discloses a kind of polarized wave waveguide transmission coupling devices based on hetero-junctions in face, and the transmission coupling efficiency is controllable, and described device successively includes hetero-junction thin-film in the substrate, dielectric layer, graphene/face hBN of setting from bottom to top；The momentum matching condition of graphene phasmon polarized wave and hBN phonon polarized wave can be changed in the present invention, to regulate and control the transmission coupling efficiency between polarized wave；When two kinds of polarized wave momentum matching points can be reached by regulating and controlling graphene Fermi, the coupling efficiency between polarized wave can reach 100%, realize 100% transmission.
Description
Technical field
The present invention relates to integreted phontonics circuit technology field, in particular to a kind of phasmon polarized wave harmony muon polarization wave
The device and method of coupling is transmitted in waveguide in graphene/face hBN on hetero-junctions.
Background technique
Integreted phontonics circuit can overcome optical diffraction limit, and device dimension is greatly reduced, nanoscale may be implemented
It is upper integrated, while it carries out information transmission by optical signal, greatly reduces in transmission process and is lost, in interconnection optical path, light
Huge potentiality and advantage are shown in terms of the functions such as calculating, it may be possible to replace the generation information technology of " integrated circuit "
Mainstay.
Graphene is the two dimensional crystal that single layer of carbon atom is constituted, and ten layers of graphite below are looked at as graphene.Have
The excellent characteristics such as electrical and optical, have huge applications potentiality in photoelectric device and integreted phontonics circuit field.Existing graphite
It can support that phasmon polarizes wave mode on alkene, this is that electronics coupled in free space on incident photon and graphene is formed
's.Light beam in space can be tied on nanoscale by graphene phasmon, realize the electromagnetic waveguide mode of high local, favorably
In integreted phontonics circuit on realization smaller szie.Graphene phasmon polarized wave is also easy to be adjusted, by add grid voltage or
Chemical doping mode changes its Fermi and is able to achieve.Graphene conductivity can be provided by Kubo equation, and dielectric function passes through conductance
Rate calculating is got.(Nanoscale,2017,9(39):14998-15004.)
HBN (boron nitride) is stratiform Van der Waals crystal, passes through Van der Waals weak interaction couple of force by each atomic plane
It is combined.HBN is natural low-loss infrared hyperbolic material, in its upper reststrahlen band (1370-1610cm-1) and be left
Remaining ray band (780-830cm-1) in support phonon excimer polarized wave.Phonon polarized wave is in photon and hBN in free space
Phonon occur coupling formed, the advantage with low-loss long distance transmission.Its electromagnetic waveguide mode is dependent on hBN's
Thickness, in main distributed material body and surface, also may be implemented for light beam to be tied in nanoscale, is advantageously implemented smaller szie
Upper integreted phontonics circuit.The dielectric function of hBN is derived to calculate by first principle and be got, can refer to (Nano letters,
2015,15(5):3172-3180.)。
Hetero-junctions can be grown by chemical vapor deposition means in graphene/face hBN, the system of hetero-junctions in face
It is standby, realize that the Nanometer integrated circuit of smaller scale and nanometer integrated photon circuit have established the basis of material for future.However,
On several layers of or even single layer atomic scale, waveguide mode analysis and the conduction of polarized wave always exist great challenge.Therefore it sends out
A kind of method that the transmission of high efficiency regulatory polarization sonic wave guide couples on hetero-junctions in graphene/face hBN is illustrated.
Summary of the invention
Technical solution of the present invention: a kind of polarized wave waveguide transmission coupling device based on hetero-junctions in face, described device
Transmission coupling efficiency is controllable, and described device successively includes in the substrate, dielectric layer, graphene/face hBN of setting from bottom to top
Hetero-junction thin-film；
Wherein, on substrate, hetero-junction thin-film is covered in dielectric layer to the dielectric deposition in graphene/face hBN
On；
Bias voltage source is set, and a pole of the bias voltage source adds on substrate, and another pole is added on graphene.
Preferably, hetero-junction thin-film is prepared by chemical vapour deposition technique in the graphene/face hBN,
What the polarized wave supported above can be excited and be detected with the mode of scatter-type near-field optical microscope or prism-coupled.
Preferably, the material of the substrate includes Si, for being used as conductive gate layer；
The material of the dielectric layer includes SiO2, MgF2, CaF2, BaF2, air material, the thickness of the dielectric layer
Range is 10nm~3000nm；
The metal material of the bias voltage source include but is not limited to gold, silver, copper, aluminium, the single metal layer of platinum, alloy-layer or
The overlaying structure of a variety of single metal layers or alloy-layer, wherein the width of metal material and length range be 10nm~2 ×
107Nm, thickness range are 5nm~3 × 106nm。
Preferably, by designing different bias voltages, and then changing graphene Fermi can be with graphene phasmon pole
The dispersion relation for changing wave, changes the momentum matching condition of graphene phasmon polarized wave and hBN phonon polarized wave, artificial
Regulate and control the transmission coupling efficiency between polarized wave.
Preferably, as the mobility 2000cm of graphene2/ Vs, hBN with a thickness of 1nm, support phonon polarized wave in hBN
Frequency range select 1377cm-1And 1385cm-1Excitation light source frequency, change the bias on graphene, coupling is saturating between polarized wave
The rate of penetrating will be modulated significantly.
Preferably, in frequency 1377cm-1Coupling transmission is modulated to 100% from 0% between the polarized wave of support, is wherein taken
Meter Neng Cong 0.1eV to 0.6eV variation.
A method of preparing the polarized wave waveguide transmission coupling device based on hetero-junctions in face, the method tool
Body includes the following steps；
(1) dielectric layer is made: using the method for electron beam evaporation plating, atomic layer deposition or molecular beam epitaxial growth in substrate
On prepare dielectric layer film as dielectric substrate, wherein the material of substrate is silicon；
(2) it prepares graphene/hBN film: being obtained by the chemical vapour deposition technique of standard heterogeneous in graphene/face hBN
Tie film；
(3) hetero-junction thin-film in graphene/face hBN is shifted: will be heterogeneous in the graphene of chemical vapour deposition technique/face hBN
Knot film is transferred on the dielectric layer of above-mentioned preparation；
(4) it makes electric source layer: utilizing ultraviolet photolithographic, electron beam exposure, electron beam evaporation plating or hot evaporation or magnetron sputtering
Or the method for molecular beam epitaxial growth prepares electric source layer.
Beneficial effects of the present invention: a kind of polarized wave waveguide transmission coupling device based on hetero-junctions in face of the present invention leads to
It crosses under the excitation detection of scatter-type near-field optical microscope, by designing different bias voltages, and then changes graphene and take
The dispersion relation of rice energy and graphene phasmon polarized wave, therefore change graphene phasmon polarized wave and hBN phonon
The momentum matching condition of polarized wave, and then regulate and control the transmission coupling efficiency between polarized wave.The present invention can be achieved broadband, efficiently
Polarized wave waveguide transmission couples on hetero-junctions in the regulation face of rate, mentions for miniaturization fiber waveguide device and nanometer integrated photon circuit
Good prospect is supplied.
It should be appreciated that aforementioned description substantially and subsequent detailed description are exemplary illustration and explanation, it should not
As the limitation to the claimed content of the present invention.
Detailed description of the invention
With reference to the attached drawing of accompanying, the more purposes of the present invention, function and advantage are by the as follows of embodiment through the invention
Description is illustrated, in which:
Fig. 1 show the longitudinal profile main view of the invention based on the polarized wave waveguide transmission coupling device of hetero-junctions in face
Figure.
Fig. 2 show the preparation method process of the invention based on the polarized wave waveguide transmission coupling device of hetero-junctions in face
Figure.
Fig. 3 a~Fig. 3 c show the structure distribution figure of graphene layer of the present invention Yu hBN layers.
Fig. 4 a~Fig. 4 c show the dispersion relation of two kinds of polarized waves of the invention and the comparison figure of transmissivity.
Fig. 5 show the transmission coupling process of the invention based on the polarized wave waveguide transmission coupling device of hetero-junctions in face
Performance show.
Fig. 6 a~Fig. 6 b show the physics of the invention based on the polarized wave waveguide transmission coupling process of hetero-junctions in face
Mechanism choice.
Fig. 7 show the polarized wave waveguide transmission coupling process of the invention based on hetero-junctions in face in wide frequency ranges
Performance show.
Specific embodiment
By reference to exemplary embodiment, the purpose of the present invention and function and the side for realizing these purposes and function
Method will be illustrated.However, the present invention is not limited to exemplary embodiment as disclosed below；Can by different form come
It is realized.The essence of specification is only to aid in those skilled in the relevant arts' Integrated Understanding detail of the invention.
Hereinafter, the embodiment of the present invention will be described with reference to the drawings.In the accompanying drawings, identical appended drawing reference represents identical
Or similar component or same or like step.
Fig. 1 show that the present invention is based on the longitudinal profile main views of the polarized wave waveguide transmission coupling device of hetero-junctions in face
Figure.
As shown in Figure 1, the polarized wave waveguide transmission coupling device based on hetero-junctions in face includes setting gradually from bottom to top
Substrate 101, dielectric layer 102, hetero-junction thin-film 103 in graphene/face hBN；
Wherein hetero-junction thin-film 103 includes 103a and hBN layers of 103b of graphene layer in the graphene/face hBN, wherein stone
The distribution mode of black 103a and hBN layers of 103b of alkene layer include " day " font, " returning " font, etc..
Specifically, Fig. 3 a~Fig. 3 c show the structure distribution figure of graphene layer of the present invention Yu hBN layers, as shown in Figure 3a,
Hetero-junction thin-film 103 includes 103a and hBN layers of 103b of graphene layer in graphene/face hBN, wherein graphene layer 103a and hBN
The distribution mode of layer 103b is " day " font；
Such as Fig. 3 b, shown in Fig. 3 c, hetero-junction thin-film 103 includes 103a and hBN layers of graphene layer in graphene/face hBN
103b, wherein the distribution mode of graphene layer 103a and hBN layers of 103b is that class " returns " font, wherein the structure packet of hBN layers of 103b
Include circle, polygon etc..
The dielectric layer 102 is deposited on substrate 101, and hetero-junction thin-film 103 is covered in electric Jie in graphene/face hBN
On matter layer 102.
Bias voltage source 104 is set, wherein a pole of the bias voltage source 104 is added on substrate 101, another pole is added in
On graphene layer 103a.
Hetero-junction thin-film 103 is prepared for chemical vapour deposition technique in the graphene/face hBN, above
What the polarized wave of support can be excited and be detected with scatter-type near-field optical microscope.
The material of the substrate 101 is Si, for being used as conductive gate layer；
The material of the dielectric layer 102 is SiO2, MgF2, CaF2, BaF2, the materials such as air, thickness range 10nm
~3000nm；
The metal material of the power supply pole of the bias voltage source 104 includes but is not limited to the single gold such as gold, silver, copper, aluminium, platinum
Belong to the overlaying structure of layer, alloy-layer or a variety of single metal layers or alloy-layer, width and length range are 10nm~2 × 107Nm,
Thickness range is 5nm~3 × 106nm。
Fig. 2 is the preparation method flow chart of the invention based on the polarized wave waveguide transmission coupling device of hetero-junctions in face.
Steps are as follows:
(1) dielectric layer is made: using the method for electron beam evaporation plating, atomic layer deposition or molecular beam epitaxial growth in substrate
On prepare dielectric layer film as dielectric substrate.
(2) it prepares hetero-junction thin-film in graphene/face hBN: graphene/hBN is obtained by standard chemical vapor sedimentation
Hetero-junction thin-film in face.
(4) hetero-junction thin-film in graphene/face hBN is shifted: will be different in the graphene of chemical vapor deposition growth/face hBN
Matter knot film is transferred on the dielectric layer of above-mentioned preparation.
(5) it makes electric source metal: utilizing ultraviolet photolithographic, electron beam exposure, electron beam evaporation plating or hot evaporation or magnetic control
The method of sputtering or molecular beam epitaxial growth prepares electric source layer.
The device to couple to polarized wave waveguide transmission on hetero-junctions in regulation face of the invention carries out emulation experiment below
With calculating, the performance of device of the present invention is further verified.
Fig. 4 a~Fig. 4 b show the dispersion relation of two kinds of polarized waves of the invention and the comparison figure of transmissivity, wherein
Specifically, Fig. 4 a show the dispersion relation figure of two kinds of polarized waves, two of them polarized wave crosspoint reaches momentum matching, coupling
Efficiency of transmission highest is closed, far from crosspoint, momentum mismatch is more serious, and coupling efficiency of transmission reduces, wherein in fig. 4b can be with body
Reveal and, when P2 transmissivity is up to 100%, corresponding is exactly the cross-point locations in Fig. 4 a, far from P2 point position, i.e., far
Position from momentum matching, transmissivity gradually decrease；In fig. 4b, P3 point region is far from the wave band for supporting phonon polarized wave
(1370~1610cm-1), therefore transmission enhancement, transmissivity 0% are unable in graphene phasmon polarization wave direction hBN.And P1
Position is common coupling transmission situation, therefore in the practical coupling process of above P1-P3 point, can be clear from Fig. 4 c
Reflect.
Fig. 5 is that the performance of the invention coupled based on polarized wave waveguide transmission on hetero-junctions in high efficiency regulatory face is shown.This
Invention is calculated using emulation experiment, and phasmon polarized wave excites on graphene layer, propagates to the boundary graphene/hBN, and one
Portion of energy couples (transmission) and forms phonon polarized wave to hBN, and a part is reflected back.Wherein, the simulation calculation is base
It is carried out in finite element theory basis, polarization wave property depends on the optical dielectric function of graphene and hBN.Wherein, graphene
Mobility 2000cm2The thickness of/Vs, hBN are 1nm.Support the frequency range of phonon polarized wave (1370 in upper reststrahlen band in hBN
~1610cm-1) 1377cm is selected at random-1And 1385cm-1Excitation light source frequency, change graphene on bias, i.e., change stone
The Fermi of black alkene can, it is evident that coupled transmittance will be modulated significantly between polarized wave.In frequency 1377cm-1It supports
Coupling transmission is modulated to 100% from 0% between polarized wave, and wherein Fermi can change from 0.1eV to 0.6eV.
Fig. 6 a~Fig. 6 b be it is of the invention based in regulation face on hetero-junctions polarized wave waveguide transmission coupling process physics
Mechanism.Wherein Fig. 6 a show graphene phasmon polarized wave and hBN phonon polarized wave under different voltages, corresponding polarization
Undulate quantity distribution situation.Fig. 6 b show two kinds of polarized waves in the momentum matching situation under different voltages.Wherein, between polarized wave
Both coupled transmittance direct ratios momentum matching situation.When the momentum exact matching of two kinds of polarized waves, coupled transmittance is up to
100%.As momentum mismatch condition is more serious, coupled transmittance can be smaller and smaller.
Fig. 7 be it is of the invention based in regulation face on hetero-junctions polarized wave waveguide transmission coupling process in wide frequency ranges
Performance show.According to the physical mechanism of two kinds of polarized wave momentum matchings, using phonon polarized wave dispersion relation ω-q, (black is real
Line), graphene Fermi energy is then modulated, modulates graphene phasmon dispersion relation, the intersection point of the two momentum matching is in figure
Real point on show.It was found that theoretically can be in the support wave band (1370-1610cm of hBN phonon polarized wave-1) on,
Two kinds of polarized wave momentum matching points can be obtained to regulate and control graphene Fermi, and then can achieve 100% coupling transmission.Therefore
Broadband can be achieved in the present invention, polarized wave waveguide transmission coupling on hetero-junctions in efficient regulation face, to minimize optical waveguide
Device and nanometer integrated photon circuit provide good prospect.
In conjunction with the explanation and practice of the invention disclosed here, the other embodiment of the present invention is for those skilled in the art
It all will be readily apparent and understand.Illustrate and embodiment is regarded only as being exemplary, true scope of the invention and purport are equal
It is defined in the claims.
Claims (7)
1. a kind of polarized wave waveguide transmission coupling device based on hetero-junctions in face, described device successively includes setting from bottom to top
Substrate, dielectric layer, hetero-junction thin-film in graphene/face hBN；
Wherein, on substrate, hetero-junction thin-film is covered on dielectric layer the dielectric deposition in graphene/face hBN；
Bias voltage source is set, and a pole of the bias voltage source adds on substrate, and another pole is added on graphene.
2. the polarized wave waveguide transmission coupling device according to claim 1 based on hetero-junctions in face, which is characterized in that institute
Stating hetero-junction thin-film in graphene/face hBN is prepared by chemical vapour deposition technique, and the polarized wave supported above can be with
It is excited and is detected with scatter-type near-field optical microscope.
3. the polarized wave waveguide transmission coupling device according to claim 1 based on hetero-junctions in face, which is characterized in that
The material of the substrate includes Si, for being used as conductive gate layer；
The material of the dielectric layer includes SiO2, MgF2, CaF2, BaF2, air material, the thickness range of the dielectric layer
For 10nm~3000nm；
The metal material of the bias voltage source includes but is not limited to gold, silver, copper, aluminium, the single metal layer of platinum, alloy-layer or a variety of
The overlaying structure of single metal layer or alloy-layer, wherein the width of metal material and length range are 10nm~2 × 107Nm is thick
Degree range is 5nm~3 × 106nm。
4. the polarized wave waveguide transmission coupling device according to claim 1 based on hetero-junctions in face, which is characterized in that logical
It crosses and designs different bias voltages, and then change graphene Fermi to change with the dispersion relation of graphene phasmon polarized wave
Become the momentum matching condition of graphene phasmon polarized wave and hBN phonon polarized wave, regulates and controls the transmission coupling between polarized wave
Close efficiency.
5. the polarized wave waveguide transmission coupling device according to claim 4 based on hetero-junctions in face, which is characterized in that when
The mobility 2000cm of graphene2/ Vs, hBN with a thickness of 1nm, support the frequency range of phonon polarized wave to select 1377cm in hBN-1
And 1385cm-1Excitation light source frequency, change the bias on graphene, coupled transmittance will be adjusted significantly between polarized wave
System.
6. the polarized wave waveguide transmission coupling device according to claim 5 based on hetero-junctions in face, which is characterized in that
Frequency 1377cm-1Between the polarized wave of support coupling transmission be modulated to 100% from 0%, wherein Fermi can from 0.1eV to
0.6eV variation.
7. a kind of method prepared as described in claim 1 based on the polarized wave waveguide transmission coupling device of hetero-junctions in face,
The method specifically includes the following steps；
(1) it makes dielectric layer: being made on substrate using the method for electron beam evaporation plating, atomic layer deposition or molecular beam epitaxial growth
Standby dielectric layer film is as dielectric substrate, and wherein the material of substrate is silicon；
(2) prepare graphene/hBN film: it is thin to obtain hetero-junctions in graphene/face hBN by the chemical vapour deposition technique of standard
Film；
(3) hetero-junction thin-film in graphene/face hBN is shifted: hetero-junctions in the graphene of chemical vapour deposition technique/face hBN is thin
In film transfer to the dielectric layer of above-mentioned preparation；
(4) it makes electric source layer: using ultraviolet photolithographic, electron beam exposure, electron beam evaporation plating or hot evaporation or magnetron sputtering or dividing
The method of beamlet epitaxial growth prepares electric source layer.
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| CN113666364A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微***与信息技术研究所 | Dry transfer method of graphene continuous film |
| CN114679152A (en) * | 2022-03-25 | 2022-06-28 | 电子科技大学 | Dynamically adjustable graphene phonon waveguide and method |
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