CN109399552B - 一种微机电***红外探测器的制作方法 - Google Patents
一种微机电***红外探测器的制作方法 Download PDFInfo
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- CN109399552B CN109399552B CN201811422318.3A CN201811422318A CN109399552B CN 109399552 B CN109399552 B CN 109399552B CN 201811422318 A CN201811422318 A CN 201811422318A CN 109399552 B CN109399552 B CN 109399552B
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- substrate
- sensitive device
- heat
- silicon
- heat sensitive
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 32
- 229910003460 diamond Inorganic materials 0.000 claims description 29
- 239000010432 diamond Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 17
- 238000004806 packaging method and process Methods 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000005388 borosilicate glass Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0019—Protection against thermal alteration or destruction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0069—Thermal properties, e.g. improve thermal insulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811422318.3A CN109399552B (zh) | 2018-11-27 | 2018-11-27 | 一种微机电***红外探测器的制作方法 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201811422318.3A CN109399552B (zh) | 2018-11-27 | 2018-11-27 | 一种微机电***红外探测器的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109399552A CN109399552A (zh) | 2019-03-01 |
CN109399552B true CN109399552B (zh) | 2024-04-02 |
Family
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Family Applications (1)
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CN201811422318.3A Active CN109399552B (zh) | 2018-11-27 | 2018-11-27 | 一种微机电***红外探测器的制作方法 |
Country Status (1)
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CN (1) | CN109399552B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110577186A (zh) * | 2019-09-12 | 2019-12-17 | 南通大学 | 一种mems红外探测器三维封装结构及其制作方法 |
JP7369399B2 (ja) * | 2020-02-19 | 2023-10-26 | 国立大学法人静岡大学 | 振動素子の製造方法、振動発電素子の製造方法、振動素子、および振動発電素子 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101386402A (zh) * | 2008-10-16 | 2009-03-18 | 上海集成电路研发中心有限公司 | 一种红外探测器及其制造方法 |
CN102435319A (zh) * | 2011-09-27 | 2012-05-02 | 电子科技大学 | 一种非致冷红外探测器 |
CN107176585A (zh) * | 2017-05-24 | 2017-09-19 | 广东合微集成电路技术有限公司 | 一种适合表面贴装工艺的压阻式压力传感器及其制造方法 |
CN107873014A (zh) * | 2015-07-02 | 2018-04-03 | 凯奥尼克公司 | 具有贯穿基板互连的电子***以及mems器件 |
CN209128032U (zh) * | 2018-11-27 | 2019-07-19 | 成都锐杰微科技有限公司 | 一种微机电***红外探测器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080099924A1 (en) * | 2005-05-04 | 2008-05-01 | Icemos Technology Corporation | Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric Shape |
US8951893B2 (en) * | 2013-01-03 | 2015-02-10 | International Business Machines Corporation | Fabricating polysilicon MOS devices and passive ESD devices |
-
2018
- 2018-11-27 CN CN201811422318.3A patent/CN109399552B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101386402A (zh) * | 2008-10-16 | 2009-03-18 | 上海集成电路研发中心有限公司 | 一种红外探测器及其制造方法 |
CN102435319A (zh) * | 2011-09-27 | 2012-05-02 | 电子科技大学 | 一种非致冷红外探测器 |
CN107873014A (zh) * | 2015-07-02 | 2018-04-03 | 凯奥尼克公司 | 具有贯穿基板互连的电子***以及mems器件 |
CN107176585A (zh) * | 2017-05-24 | 2017-09-19 | 广东合微集成电路技术有限公司 | 一种适合表面贴装工艺的压阻式压力传感器及其制造方法 |
CN209128032U (zh) * | 2018-11-27 | 2019-07-19 | 成都锐杰微科技有限公司 | 一种微机电***红外探测器 |
Non-Patent Citations (1)
Title |
---|
A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators;Jicong Zhao等;Journal of Micromechanics and Microengineering;第27卷;第109页 * |
Also Published As
Publication number | Publication date |
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CN109399552A (zh) | 2019-03-01 |
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Address after: 226000 No. 9 Siyuan Road, Chongchuan District, Nantong City, Jiangsu Province Applicant after: NANTONG University Applicant after: Suzhou Ruijie Micro Technology Group Co.,Ltd. Address before: 226000 No. 9 Siyuan Road, Chongchuan District, Nantong City, Jiangsu Province Applicant before: NANTONG University Applicant before: CHENGDU U-PKG TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20221117 Address after: Room Z101, Building 1, No. 78, Jinshan East Road, Suzhou Hi tech Zone, Jiangsu 215129 Applicant after: Suzhou Ruijie Micro Technology Group Co.,Ltd. Address before: 226000 No. 9 Siyuan Road, Chongchuan District, Nantong City, Jiangsu Province Applicant before: NANTONG University Applicant before: Suzhou Ruijie Micro Technology Group Co.,Ltd. |
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