CN109385651A - The method of the groove of copper filling - Google Patents
The method of the groove of copper filling Download PDFInfo
- Publication number
- CN109385651A CN109385651A CN201811477042.9A CN201811477042A CN109385651A CN 109385651 A CN109385651 A CN 109385651A CN 201811477042 A CN201811477042 A CN 201811477042A CN 109385651 A CN109385651 A CN 109385651A
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- CN
- China
- Prior art keywords
- groove
- copper
- layer
- electric current
- filling
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
The invention discloses a kind of methods of the groove of copper filling, comprising steps of Step 1: forming groove；Step 2: forming barrier layer；Step 3: forming seed layer；Step 4: fill copper in a groove using electrochemical plating processes and formed the fully filled copper body layer of groove, including as follows step by step: step 41, the bottom surface and side homoepitaxial first layer copper for being formed in groove using the conformal deposition that the first electric current carries out copper；Step 42 carries out depositing the size of electric current into the formation second layer copper to form the thickness for being greater than side positioned at the thickness on bottom portion of groove surface from the transition stage that the first electric current is gradually lowered to the second electric current copper；Step 43 is deposited upwards using the bottom that the second electric current carries out copper and forms third layer copper and be filled up completely groove.The present invention can combine the reparation of the seed crystal during electro-coppering to groove side and bottom surface and fill bottom-up, improve the ability of copper filling groove, improve the empty problem of groove side.
Description
Technical field
The present invention relates to a kind of manufacturing methods of semiconductor integrated circuit, more particularly to a kind of side of the groove of copper filling
Method.
Background technique
With copper lines size reduction, the groove filling (gapfill) of electro-coppering becomes more to challenge.It is more advanced
Plating copper additives can increase the process window (window) of Cu gapfill, and the optimization of copper plating process can be further
Promote gapfill ability.In general, electro-coppering high current can reduce the ionization of inhibitor, conformal deposition (conformal is formed
Dep), conformal dep can have one to the seed crystal (seed) of copper in the side of groove and bottom surface while homoepitaxial
Fixed repair, so that seed layer (seed layer) is more continuous.And electro-coppering low current can then be formed it is past from bottom
Upper (bottom up) gapfill, completion groove or through-hole are filled without empty (void free).
It is the device junction composition in each step of existing method, the groove 102 of existing copper filling as shown in Figure 1A to Fig. 1 E
Method include the following steps:
Step 1: as shown in Figure 1A, forming groove 102 in first medium layer 101.
The first medium layer 101 is interlayer film, and 102 structure of groove is the through-hole for connecting upper lower metal layer.
Preferably, the interlayer film is oxide layer.
The groove 102 uses lithographic definition, performs etching shape to the first medium layer 101 using etching technics later
At.
Etching technics to the groove 102 includes dry etching and wet etching.
The upper metal layers of the through-hole connection and the material of lower metal layer all include copper.
Step 2: as shown in Figure 1B, forming barrier layer 103 in the bottom surface of the groove 102 and side.
The material on the barrier layer 103 is TaN.
Step 3: as shown in Figure 1 C, forming seed layer 104 on the surface on the barrier layer 103.
Step 4: copper is filled in the groove 102 using electrochemical plating processes and is formed the groove 102 completely
The copper body layer of filling.
The electrochemical plating processes include it is following step by step:
Step 41, as shown in figure iD, carries out the conformal deposition of copper, and the conformal deposition of copper is realized using the first electric current in institute
State the bottom surface and side homoepitaxial first layer copper 105a of groove 102；It is realized by the conformal deposition to the groove
The reparation of the seed layer 104 of 102 side.
Step 42, as referring to figure 1E, the bottom for carrying out copper deposits upwards, and the bottom is deposited upwards using the second electric current shape
The groove 102 is filled up completely at second layer copper 105b, the second layer copper 105b up gives birth to from the bottom of the groove 102
It is long, deposit the filling capacity guaranteed to the groove 102 upwards by the bottom.
In existing method, the application of step 41 is first current impulse, and the first current impulse is direct after completing
It is switched to the second electric current, in such handoff procedure, can not be guaranteed simultaneously to the good of the side of the groove 102 and bottom surface
Good deposition not can guarantee the continuity in the copper of the side of the groove 102 formation, make it possible to generate side cavity
(sidewall void)。
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of methods of the groove of copper filling, can combine electro-coppering
It is filled in journey to the reparation of the seed crystal of groove side and bottom surface and bottom-up, improves the ability of copper filling groove,
Improve the empty problem of groove side.
In order to solve the above technical problems, the method for the groove of copper filling provided by the invention includes the following steps:
Step 1: forming groove in first medium layer.
Step 2: forming barrier layer in the bottom surface of the groove and side.
Step 3: the surface on the barrier layer forms seed layer.
Step 4: being filled out in the groove using electrochemical plating processes (ElectroChemical Plating, ECP)
It fills copper and is formed the fully filled copper body layer of the groove.
The electrochemical plating processes include it is following step by step:
Step 41, the conformal deposition for carrying out copper, the conformal deposition of copper are realized using the first electric current at the bottom of the groove
Portion surface and side homoepitaxial first layer copper；The seed layer to the side of the groove is realized by the conformal deposition
Reparation.
Step 42, the transition stage deposition for carrying out copper, the size of electric current is from described first in transition stage deposition
Electric current is gradually lowered to the second electric current, and the transition stage depositing operation forms second in the bottom surface of the groove and side
Layer copper, the thickness that the second layer copper is grown from the bottom portion of groove surface are greater than the thickness from the lateral growth of the groove；
Guarantee the continuity of the copper of the groove side by transition stage deposition and thereby prevents from producing in the side of the groove
Raw cavity.
Step 43, the bottom for carrying out copper deposit upwards, and the bottom deposits upwards forms third layer copper using the second electric current
The groove is filled up completely, the third layer copper is deposited from the bottom-up growth of the groove by the bottom upwards
Guarantee the filling capacity to the groove.
A further improvement is that the size of first electric current of conformal deposition described in step 41 is 10A~50A, work
The skill time is less than 1s.
A further improvement is that the size of first electric current of conformal deposition described in step 41 is 20A~35A, work
The skill time is less than 0.5s.
A further improvement is that the rate that the transition stage deposition current reduces is greater than 10A/s.
A further improvement is that the rate that the transition stage deposition current reduces is greater than 20A/s.
A further improvement is that the size for second electric current that the bottom deposits upwards is less than or equal to 10A, technique
Time is greater than 1s.
A further improvement is that the size for second electric current that the bottom deposits upwards is 3A~6A.
A further improvement is that reducing electric current using consecutive variations mode in the transition stage deposition；Alternatively, the mistake
Crossing in phase deposition reduces electric current using stepped change mode.
A further improvement is that the first medium layer is interlayer film, the groove structure is to connect upper lower metal layer
Through-hole.
A further improvement is that the material on the barrier layer is TaN.
A further improvement is that the interlayer film is oxide layer.
A further improvement is that further including using the chemical mechanical milling tech of copper will be described recessed after step 4 completion
The copper body layer, the seed layer and the barrier layer outside slot all remove, and make the copper body layer, the seed layer and institute
Barrier layer is stated to be all located in the groove.
A further improvement is that the groove uses lithographic definition, later using etching technics to the first medium layer
It performs etching to be formed.
A further improvement is that including dry etching and wet etching to the etching technics of the groove.
A further improvement is that the upper metal layers of the through-hole connection and the material of lower metal layer all include copper.
The ECP of the copper of filling groove is optimized in the present invention, mainly the conformal deposition in the copper using high current
And using low current copper bottom deposit upwards between increase the copper that an electric current gradually decreases transition stage deposit, copper
Transition stage deposition in by the way that electric current is gradually decreased, realization make copper the deposition rate of groove side gradually decrease and
The deposition rate on bottom portion of groove surface gradually increases, and can combine electro-coppering in the process to the seed of groove side and bottom surface
It brilliant reparation and fills bottom-up, can guarantee the continuity of the copper of groove side, reduce the production in the cavity of groove side
Ability that is raw and thereby improving copper filling groove.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Figure 1A-Fig. 1 E is the device junction composition in each step of method of the groove of existing copper filling；
Fig. 2 is the flow chart of the method for the groove of copper of embodiment of the present invention filling；
Fig. 3 A- Fig. 3 F is the device junction composition in each step of present invention method.
Specific embodiment
As shown in Fig. 2, being the flow chart of the method for the groove 2 of copper of embodiment of the present invention filling；Such as Fig. 3 A to Fig. 3 F institute
Show, be the device junction composition in each step of present invention method, the method for the groove 2 of copper of embodiment of the present invention filling includes
Following steps:
Step 1: as shown in Figure 3A, forming groove 2 in first medium layer 1.
The first medium layer 1 is interlayer film, and 2 structure of groove is the through-hole for connecting upper lower metal layer.
Preferably, the interlayer film is oxide layer.
The groove 2 uses lithographic definition, performs etching to be formed to the first medium layer 1 using etching technics later.
Etching technics to the groove 2 includes dry etching and wet etching.
The upper metal layers of the through-hole connection and the material of lower metal layer all include copper.
Step 2: as shown in Figure 3B, forming barrier layer 3 in the bottom surface of the groove 2 and side.
The material on the barrier layer 3 is TaN.
Step 3: as shown in Figure 3 C, forming seed layer 4 on the surface on the barrier layer 3.
The groove 2 is filled up completely Step 4: filling copper in the groove 2 using electrochemical plating processes and being formed
Copper body layer.
The electrochemical plating processes include it is following step by step:
Step 41, as shown in Figure 3D, carries out the conformal deposition of copper, the conformal deposition of copper is realized using the first electric current in institute
State the bottom surface and side homoepitaxial first layer copper 5a of groove 2；The side to the groove 2 is realized by the conformal deposition
The reparation of the seed layer 4 in face.
In the embodiment of the present invention, the size of first electric current of conformal deposition described in step 41 is 10A~50A, work
The skill time is less than 1s.More preferably be selected as, the size of first electric current of conformal deposition described in step 41 be 20A~
35A, process time are less than 0.5s.
Step 42, as shown in FIGURE 3 E carries out the transition stage deposition of copper, the size of electric current in transition stage deposition
Be gradually lowered to the second electric current from first electric current, the transition stage depositing operation the groove 2 bottom surface and
Side forms second layer copper 5b, and the thickness that the second layer copper 5b is grown from 2 bottom surface of groove is greater than from the groove 2
Lateral growth thickness；Guarantee the continuity of the copper of 2 side of groove by transition stage deposition and thereby prevents
Cavity is generated in the side of the groove 2.
In the embodiment of the present invention, the rate that the transition stage deposition current reduces is greater than 10A/s.It is more preferably selected as, institute
The rate for stating the reduction of transition stage deposition current is greater than 20A/s.
Electric current is reduced using consecutive variations mode in the transition stage deposition；Alternatively, being adopted in the transition stage deposition
Electric current is reduced with stepped change mode.
Step 43, as illustrated in Figure 3 F, the bottom for carrying out copper deposits upwards, and the bottom is deposited upwards using the second electric current shape
The groove 2 is filled up completely at third layer copper 5c, the third layer copper 5c passes through from the bottom-up growth of the groove 2
The bottom deposits the filling capacity guaranteed to the groove 2 upwards.
In the embodiment of the present invention, the size for second electric current that the bottom deposits upwards is less than or equal to 10A, technique
Time is greater than 1s.It is more preferably selected as, the size for second electric current that the bottom deposits upwards is 3A~6A.
It further include using the chemical mechanical milling tech of copper by the copper master outside the groove 2 after step 4 completion
Body layer, the seed layer 4 and the barrier layer 3 all remove, and make the copper body layer, the seed layer 4 and the barrier layer 3 all
In the groove 2.
The ECP of the copper of filling groove 2 is optimized in the embodiment of the present invention, mainly applying in the copper using high current
Shape deposition and using the copper of low current bottom deposit upwards between increase the transition stage of the copper that an electric current gradually decreases
Deposition, copper transition stage deposition in by the way that electric current is gradually decreased, relative in existing method use high-current pulse mode
It completes to be directly switch to the situation that the bottom of low current deposits upwards after conformal deposition, the present invention, which is able to achieve, makes copper in groove 2
The deposition rate of side is gradually decreased and is gradually increased in the deposition rate of 2 bottom surface of groove, can combine electro-coppering
It is filled in the process to the reparation of the seed crystal of 2 side of groove and bottom surface and bottom-up, can guarantee the copper of 2 side of groove
Continuity, reduce by 2 side of groove cavity generation and thereby improve copper filling groove 2 ability.
Above by specific embodiment, invention is explained in detail, but these are not constituted to of the invention
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (15)
1. a kind of method of the groove of copper filling, which comprises the steps of:
Step 1: forming groove in first medium layer；
Step 2: forming barrier layer in the bottom surface of the groove and side；
Step 3: the surface on the barrier layer forms seed layer；
Step 4: copper is filled in the groove using electrochemical plating processes and is formed the fully filled copper master of the groove
Body layer；
The electrochemical plating processes include it is following step by step:
Step 41, the conformal deposition for carrying out copper, the conformal deposition of copper realize the bottom table in the groove using the first electric current
Face and side homoepitaxial first layer copper；Repairing to the seed layer of the side of the groove is realized by the conformal deposition
It is multiple；
Step 42, the transition stage deposition for carrying out copper, the size of electric current is from first electric current in transition stage deposition
It is gradually lowered to the second electric current, the transition stage depositing operation forms the second layer in the bottom surface of the groove and side
Copper, the thickness that the second layer copper is grown from the bottom portion of groove surface are greater than the thickness from the lateral growth of the groove；It is logical
The transition stage is crossed to deposit the continuity for guaranteeing the copper of the groove side and thereby prevent from generating in the side of the groove
Cavity；
Step 43, the bottom for carrying out copper deposit upwards, and the bottom deposits upwards forms third layer copper for institute using the second electric current
It states groove to be filled up completely, the third layer copper deposits guarantee by the bottom from the bottom-up growth of the groove upwards
To the filling capacity of the groove.
2. the method for the groove of copper filling as described in claim 1, it is characterised in that: the institute of conformal deposition described in step 41
The size for stating the first electric current is 10A~50A, the process time is less than 1s.
3. the method for the groove of copper filling as claimed in claim 2, it is characterised in that: the institute of conformal deposition described in step 41
The size for stating the first electric current is 20A~35A, the process time is less than 0.5s.
4. the method for the groove of copper filling as claimed in claim 1 or 2, it is characterised in that: the transition stage deposition current
Reduced rate is greater than 10A/s.
5. the method for the groove of copper filling as claimed in claim 4, it is characterised in that: the transition stage deposition current reduces
Rate be greater than 20A/s.
6. the method for the groove of copper filling as claimed in claim 1 or 2, it is characterised in that: the institute that the bottom deposits upwards
It is greater than 1s that the size for stating the second electric current, which is less than or equal to 10A, process time,.
7. the method for the groove of copper as claimed in claim 6 filling, it is characterised in that: the bottom deposit upwards described the
The size of two electric currents is 3A~6A.
8. the method for the groove of copper filling as claimed in claim 1 or 2, it is characterised in that: adopted in the transition stage deposition
Electric current is reduced with consecutive variations mode；Alternatively, reducing electric current using stepped change mode in the transition stage deposition.
9. the method for the groove of copper filling as described in claim 1, it is characterised in that: the first medium layer is interlayer film,
The groove structure is the through-hole for connecting upper lower metal layer.
10. the method for the groove that the copper as described in claim 1 or 9 is filled, it is characterised in that: the material on the barrier layer is
TaN。
11. the method for the groove of copper filling as claimed in claim 9, it is characterised in that: the interlayer film is oxide layer.
12. the method for the groove of copper filling as described in claim 1, it is characterised in that: further include after step 4 completion
The copper body layer, the seed layer and the barrier layer outside the groove are all gone using the chemical mechanical milling tech of copper
It removes, is all located at the copper body layer, the seed layer and the barrier layer in the groove.
13. the method for the groove of copper filling as described in claim 1, it is characterised in that: the groove uses lithographic definition, it
Afterwards the first medium layer is performed etching to be formed using etching technics.
14. the method for the groove of copper filling as claimed in claim 13, it is characterised in that: to the etching technics packet of the groove
Include dry etching and wet etching.
15. the method for the groove of copper filling as claimed in claim 9, it is characterised in that: the upper layer metal of the through-hole connection
Layer and the material of lower metal layer all include copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477042.9A CN109385651A (en) | 2018-12-05 | 2018-12-05 | The method of the groove of copper filling |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477042.9A CN109385651A (en) | 2018-12-05 | 2018-12-05 | The method of the groove of copper filling |
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| CN109385651A true CN109385651A (en) | 2019-02-26 |
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| CN201811477042.9A Pending CN109385651A (en) | 2018-12-05 | 2018-12-05 | The method of the groove of copper filling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261587A (en) * | 2020-02-05 | 2020-06-09 | 长江存储科技有限责任公司 | Method for filling metal in groove and groove structure |
| CN113881993A (en) * | 2021-09-29 | 2022-01-04 | 新阳硅密（上海）半导体技术有限公司 | Process method capable of optimizing electroplating hole filling capacity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685086A (en) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | Electropolishing and electroplating methods |
| CN103904025A (en) * | 2014-03-24 | 2014-07-02 | 上海华力微电子有限公司 | Method for improving electromigration reliability of metal connection wire |
| US20180171502A1 (en) * | 2016-12-15 | 2018-06-21 | Applied Materials, Inc. | Methods of electrochemical deposition for void-free gap fill |
-
2018
- 2018-12-05 CN CN201811477042.9A patent/CN109385651A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685086A (en) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | Electropolishing and electroplating methods |
| CN103904025A (en) * | 2014-03-24 | 2014-07-02 | 上海华力微电子有限公司 | Method for improving electromigration reliability of metal connection wire |
| US20180171502A1 (en) * | 2016-12-15 | 2018-06-21 | Applied Materials, Inc. | Methods of electrochemical deposition for void-free gap fill |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261587A (en) * | 2020-02-05 | 2020-06-09 | 长江存储科技有限责任公司 | Method for filling metal in groove and groove structure |
| CN113881993A (en) * | 2021-09-29 | 2022-01-04 | 新阳硅密（上海）半导体技术有限公司 | Process method capable of optimizing electroplating hole filling capacity |
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Application publication date: 20190226 |
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