CN109385615A - Depositing device and its deposition method - Google Patents
Depositing device and its deposition method Download PDFInfo
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- CN109385615A CN109385615A CN201811293698.5A CN201811293698A CN109385615A CN 109385615 A CN109385615 A CN 109385615A CN 201811293698 A CN201811293698 A CN 201811293698A CN 109385615 A CN109385615 A CN 109385615A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Organic Chemistry (AREA)
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- Health & Medical Sciences (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
A kind of depositing device and its deposition method, the depositing device include: deposition chambers；Wafer susceptor is located at the deposition chamber, for placing wafer；Ultraviolet source is located at the deposition chamber, and the ultraviolet source is adapted to provide for the ultraviolet light of wafer susceptor described in directive；Reactant intake line forms sedimentary suitable for introducing a reactant into the deposition chambers to react on the wafer.The present invention program helps to improve the quality of device, reduces production cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of depositing device and its deposition method.
Background technique
It is higher and higher to the performance requirement of semiconductor devices with the diminution of semiconductor critical size, especially in operation
Higher challenge is faced in terms of speed.
In the prior art, the arithmetic speed of device can be improved by the locomotivity of raising source region carrier.Specifically
For, active area is formed in semiconductor substrate, forms gate structure on the surface of semiconductor substrate, and the active area is located at
The two sides of the gate structure form heavily stressed silicon nitride (SiN) film by the surface in gate structure, can make high stress
Active area is transmitted to form the silicon crystal lattice for drawing high or compressing, the locomotivity of Lai Tigao source region carrier, to improve device
Performance.
In specific implementation, ultraviolet light (Ultraviolent, UV) processing method can be used, heavily stressed nitridation is formed
Silicon fiml.Specifically, silicon nitride film can be deposited several times, after every deposition is primary, using ultraviolet light to the nitrogen of deposition
SiClx film is irradiated, to improve the stress of silicon nitride film.
However, in the prior art, the film deposited using ultraviolet light is easy so that the upper surface of film is answered
Power and lower surface unbalanced stress weigh, and especially when film is thicker, the stress of raising is limited, and due to spreading rate or shrinking percentage
(Shrinkage) excessive, it is also easy to lead to the generation of the defects of rupturing (Crack) (Defect), influences subsequent technique.Further
Ground, existing multiple irradiating ultraviolet light technique increase considerably technique duration, reduce production efficiency, improve and be produced into
This.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of depositing device and its deposition methods, help to improve the product of device
Matter reduces production cost.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of depositing device, comprising: deposition chambers；Wafer base
Seat is located at the deposition chamber, for placing wafer；Ultraviolet source is located at the deposition chamber, and the ultraviolet light
Light source is adapted to provide for the ultraviolet light of wafer susceptor described in directive；Reactant intake line, suitable for introducing a reactant into described heavy
Product chamber forms sedimentary to react on the wafer.
Optionally, the deposition chambers include ultraviolet light chamber and wafer chamber, the ultraviolet light chamber and wafer chamber
Between be isolated with partition, the ultraviolet source is set to the ultraviolet chamber, and the wafer susceptor is set to the crystalline substance
In wafer chamber, the reactant intake line introduces the reactant in the cavity wafer room, wherein the partition it is ultraviolet
Light transmittance is greater than preset threshold.
Optionally, the depositing device further include: clean gas input terminal positioned at the side wall of the deposition chambers, and is used
In to the deposition chambers input clean gas；Clean gas output end, positioned at the side wall of the deposition chambers, and with described heavy
The central axis of product chamber is axis, with the clean gas input terminal central symmetry.
Optionally, the position of side wall of the clean gas input terminal in the deposition chambers be located at the partition with it is described
Between reactant intake line.
Optionally, the clean gas is selected from: helium and neon.
Optionally, the wafer susceptor is located at the bottom of the wafer chamber, and the partition is parallel to the wafer susceptor,
The input direction of the clean gas input terminal is parallel to the partition.
Optionally, the depositing device further include: rotary part, the first end of the rotary part are connected to the deposition
The roof or side wall of chamber, the second end of the rotary part are connect with the ultraviolet source, and the second of the rotary part
End is rotated around the first end, to drive the ultraviolet source to rotate.
Optionally, the depositing device further include: external sediment chamber, the deposition chambers are located at the external sediment chamber
It is interior；Reactant equipment, the reactant generates equipment and is located in the external sediment chamber and is located at outside the deposition chambers, described
Reactant equipment is for generating the reactant.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of deposition method of above-mentioned depositing device, comprising: will
Wafer is set to the wafer susceptor；Reactant is inputted to the deposition chambers by the reactant intake line, and is opened
The ultraviolet source, to be irradiated in the forming process of the sedimentary to the sedimentary.
Optionally, the wafer includes: semiconductor substrate；Active area is located in the semiconductor substrate；Gate structure,
Positioned at the surface of the semiconductor substrate, and the active area is located at the two sides of the gate structure.
Optionally, inputting reactant to the deposition chambers by the reactant intake line includes: using plasma
Body generation system generates plasma and is input to the deposit cavity as the reactant, and by the reactant intake line
Room；It wherein, is silicon nitride layer in the sedimentary that the crystal column surface is formed.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, there is ultraviolet source and reactant intake line by setting deposition chamber,
It may be implemented persistently to be irradiated wafer using ultraviolet light during reaction forms sedimentary on wafer.Using this hair
The scheme of bright implementation, the film that deposition can be made to obtain has balanced stress always, and stress is higher, is also just not susceptible to brokenly
The defects of splitting helps to improve the quality of device.Further, in compared with the prior art, multiple irradiating ultraviolet light is needed, is led
Technique duration is caused to increase considerably, using the scheme of the embodiment of the present invention, technique duration is only depositing operation duration, saves purple
At least part of the duration of outside line irradiation reduces production cost to improve production efficiency.
Further, in embodiments of the present invention, setting deposition chambers include ultraviolet light chamber and wafer chamber, described ultraviolet
It is isolated between optical cavity room and wafer chamber with partition, ultraviolet source can be isolated, to is carried out to ultraviolet source
Protection avoids forming deposit on the surface of ultraviolet source, influences ultraviolet light effect.
Further, clean gas input terminal and clean gas output end are set, can be driven away by inputting clean gas
The reaction gas of deposition chamber especially drives away the reaction gas below partition, helps to reduce in the generation of the surface of partition
The probability of deposition enhances the effect of ultraviolet light to improve the cleanliness of partition.
Further, in embodiments of the present invention, external sediment chamber is set, generates equipment so as to which the reactant is arranged
In the external sediment chamber and it is located at outside the deposition chambers, helps to protect reactant generation equipment, and
It may be implemented during the deposition process, persistently wafer can either be irradiated using ultraviolet light, and wafer can be made not by anti-
Blocking for produce generating apparatus is answered, to enhance ultraviolet light radiation response.
Detailed description of the invention
Fig. 1 is a kind of top view of depositing device in the prior art；
Fig. 2 is a kind of the schematic diagram of the section structure of depositing device in the embodiment of the present invention；
Fig. 3 is a kind of flow chart of the deposition method of depositing device in the embodiment of the present invention；
Fig. 4 is a kind of the schematic diagram of the section structure of wafer in the embodiment of the present invention.
Specific embodiment
In the prior art, it in order to improve the locomotivity of source region carrier, to improve the performance of device, can use
Ultraviolet light treatment method forms heavily stressed silicon nitride film.Specifically, silicon nitride film can be deposited several times (such as
Deposited in three times to a thickness of the silicon nitride film of 45nm, deposit 15nm every time), after every deposition is primary, using ultraviolet light
The silicon nitride film of deposition is irradiated, to improve the stress of silicon nitride film.
The present inventor has found after study, in the prior art, the film deposited using ultraviolet light,
It is easy so that the upper surface stress and lower surface unbalanced stress of film weigh, especially when film is thicker, the stress of raising is limited, and
And since spreading rate or shrinking percentage are excessive, it is also easy to the generation for the defects of leading to rupture, influences subsequent technique, and using more
Secondary irradiating ultraviolet light technique increases considerably technique duration, reduces production efficiency, improves production cost.
Specifically, by taking the surface in gate structure forms heavily stressed silicon nitride film as an example, when in the semiconductor substrate
When the main semiconductor devices formed is NMOS device, need to form the silicon nitride film with tensile stress in grid, so that
Stress is transmitted to active area to form the silicon crystal lattice drawn high, the locomotivity of Lai Tigao source region carrier；When in semiconductor substrate
When the main semiconductor devices of middle formation is PMOS device, need to form the silicon nitride film with compression in grid, so that
Compression is transmitted to active area to form the silicon crystal lattice of compression, the locomotivity of Lai Tigao source region carrier.
Referring to Fig.1, Fig. 1 is a kind of top view of depositing device in the prior art.
The depositing device may include isolated deposition chambers 110 and ultraviolet light chamber 120, reactant equipment 130
It is set in the deposition chambers 110, ultraviolet source 121 is set in the ultraviolet light chamber 120.
In specific implementation, it can use mechanical arm 112 that wafer 111 is placed in deposition chambers 110 to form sedimentary,
Or wafer 111 is placed in ultraviolet light chamber 120 with irradiating ultraviolet light.The following are the signal equations of chemical reaction:
Specifically, can in deposition chambers 110 using plasma generation system generate plasma, then wait from
(for example, 400 DEG C) make SiH under daughter atmosphere medium and high temperature environment4(or SiH2Cl2、Si2Cl6) and NH3Deposition reaction occurs, and
Silicon nitride (SiN) and its by-product (By product) are formed on the surface of wafer 111, and then wafer 111 is placed in ultraviolet light
It is irradiated in chamber 120, to form high stress SiN and its by-product.
Wherein, there may be [Si-H] key and [Si-N-H] keys in SiN.A part after UV treatment, in SiN
[Si-H] key and [Si-N-H] key are struck off, and [Si-N] key is formed, and the generation of a large amount of [Si-N] keys improves the consistency of SiN,
Stress increases, namely forms high stress SiN.
It should be pointed out that in the prior art, silicon nitride film can be deposited several times, after every deposition is primary,
It is both needed to be irradiated the silicon nitride film of deposition using ultraviolet light, therefore above-mentioned chemical reaction is needed to recycle and be carried out, and leads to technique
Duration increases considerably, and being equivalent to reduces production efficiency, increases production cost.Especially shone in ultraviolet light chamber 120
The duration of ultraviolet light is penetrated commonly greater than the deposition duration in deposition chambers 110, causes in order to improve the production efficiency, to need to increase
The number of ultraviolet light chamber 120, further increases production cost.
In embodiments of the present invention, there is ultraviolet source and reactant intake line by setting deposition chamber,
It may be implemented persistently to be irradiated wafer using ultraviolet light during reaction forms sedimentary on wafer.Using this hair
The scheme of bright implementation, the film that deposition can be made to obtain has balanced stress always, and stress is higher, is also just not susceptible to brokenly
The defects of splitting helps to improve the quality of device.Further, in compared with the prior art, multiple irradiating ultraviolet light is needed, is led
Technique duration is caused to increase considerably, using the scheme of the embodiment of the present invention, technique duration is only depositing operation duration, saves purple
The duration of outside line irradiation reduces production cost to improve production efficiency.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 2, Fig. 2 is a kind of the schematic diagram of the section structure of depositing device in the embodiment of the present invention.
The depositing device may include that deposition chambers 200, wafer susceptor 211, ultraviolet source 221 and reactant are defeated
Enter pipeline 231.
Wherein, the wafer susceptor can be located in the deposition chambers 200, for placing wafer 218.
The ultraviolet source 221 can be located in the deposition chambers 200, and the ultraviolet source 221 is suitable for mentioning
For the ultraviolet light of wafer susceptor 211 described in directive.
The reactant intake line 231 is suitable for introducing a reactant into the deposition chambers 200, in the wafer
Reaction forms sedimentary on 218.
It is possible to further sink according to the material of the depositing operation and sedimentary setting reactant, such as when described
The depositing operation of lamination is gas-phase deposition (the Plasma Enhanced Chemical Vapor of plasma enhanced chemical
Deposition, PECVD), when the material of sedimentary is SiN, the reactant may include that plasma production system generates
Plasma, SiH4And NH3；When the depositing operation of the sedimentary is low-pressure chemical vapor deposition process (Low
Pressure Chemical Vapor Deposition, LPCVD) or atom layer deposition process (Atomic Layer
Deposition, ALD), when the material of sedimentary is SiN, the reactant may include what plasma production system generated
Plasma, SiH4And NH3。
Further, the ultraviolet source 221 can be rotatable.
Specifically, the depositing device may include rotary part, and the first end of the rotary part is connected to described heavy
The roof of product chamber 200, the second end of the rotary part connect with the ultraviolet source 221, and the of the rotary part
Two ends can be rotated around the first end, to drive the ultraviolet source 221 to rotate.More specifically, the rotary part
Second end can be rotated around first end in center, or be rotated around the virtual center axis for passing through the first end, it is described it is virtual in
Mandrel can be perpendicular to the surface of the wafer 218.
In embodiments of the present invention, it is rotated by the way that the second end of the rotary part is arranged around first end, purple may be implemented
The rotatability of outer radiant 221, so that the normal direction that ultraviolet source 221 irradiates has an opportunity to fall in wafer 218
Central area and fringe region, even if also the central area of wafer 218 and fringe region obtain better ultraviolet light and shine
Consistency is penetrated, ultraviolet light effect is helped to improve.
It should be pointed out that the first end of the rotary part can also be mounted on the side wall of deposition chambers 200, the rotation
The second end of rotation member can be rotated around the first end, to drive the ultraviolet source 221 to rotate, thus in ultraviolet light light
When source 221 is to 218 oblique irradiation of wafer, the uniformity of ultraviolet light is helped to improve.
Further, the material of the reactant intake line 231 can be metal.
Preferably, the material of the reactant intake line 231 can be stainless steel.
In embodiments of the present invention, it is stainless steel by the material that the reactant intake line 231 is arranged, helps to keep away
Exempt to react between reactant and pipeline material, influences deposition effect.
In embodiments of the present invention, by setting deposition chambers 200 there is ultraviolet source 221 and reactant to input
Pipeline 231 may be implemented persistently to shine wafer using ultraviolet light during reaction forms sedimentary on wafer 218
It penetrates.The scheme implemented using the present invention, the sedimentary that deposition can be made to obtain has balanced stress always, and stress is higher,
Also the defects of being just not susceptible to rupture, helps to improve the quality of device.Further, it in compared with the prior art, needs more
Secondary irradiating ultraviolet light causes technique duration to increase considerably, and using the scheme of the embodiment of the present invention, technique duration is only to deposit work
Skill duration, the duration for saving ultraviolet light irradiation reduce production cost to improve production efficiency.
Further, the deposition chambers 200 may include ultraviolet light chamber 220 and wafer chamber 210, the ultraviolet light
It can be isolated between chamber 220 and wafer chamber 210 with partition 260, the ultraviolet source 221 can be set in described ultraviolet
In optical cavity room 220, the wafer susceptor 211 be can be set in the wafer chamber 210, the reactant intake line 231
The reactant can be introduced in the wafer chamber 210.
Wherein, the ultraviolet light transmittance of the partition is greater than preset threshold.
It should be pointed out that the preset threshold should not be excessive, in order to avoid most of material is wanted because threshold value is not achieved
It asks and can not be selected, the preset threshold should not be too small, in order to avoid cause wafer 218 by less than enough since light transmittance is too low
Irradiation.
As a unrestricted example, it is 20% to 80% that the preset threshold, which can be set,.It preferably, such as can
Think 50% to 60%.
Further, the material of the partition 260 can be transparent glass, and can penetrate ultraviolet light.
Preferably, the material of the partition 260 can be quartz glass, in embodiments of the present invention, by described in setting
The material of partition 260 is quartz glass, can use the characteristic that the quartz glass coefficient of expansion is small, thermal shock resistance is good, is improved ultraviolet
Radiation response of the radiant 221 to wafer 218.
In embodiments of the present invention, setting deposition chambers 200 include ultraviolet light chamber 220 and wafer chamber 210, the purple
It is isolated between outer optical cavity room 220 and wafer chamber 210 with partition, ultraviolet source 221 can be isolated, thus to ultraviolet
Radiant 221 is protected, and is avoided forming deposit on the surface of ultraviolet source 221, is influenced ultraviolet light effect.
Further, the depositing device can also include: clean gas input terminal 241 and clean gas output end
242。
Wherein, the clean gas input terminal 241 can be located at the side wall of the deposition chambers 200, and be used for described
Deposition chambers 200 input clean gas, and the clean gas output end 242 can be located at the side wall of the deposition chambers 200, and
Using the central axis of the deposition chambers 200 as axis, with 241 central symmetry of clean gas input terminal.
It in embodiments of the present invention, can be with by setting clean gas input terminal 241 and clean gas output end 242
The reaction gas in deposition chambers 200 is driven away by inputting clean gas, especially drives away the reaction gas of 260 lower section of partition,
Help to reduce the probability deposited on the surface of partition 260, to improve the cleanliness of partition 260, enhances ultraviolet lighting
The effect penetrated.
Further, the clean gas input terminal 241 can be located at institute in the position of the side wall of the deposition chambers 200
It states between partition 260 and the reactant intake line 231.
In embodiments of the present invention, by the way that the clean gas input terminal 241 is arranged in the side wall of the deposition chambers 200
Position can between the partition 260 and the reactant intake line 231, can make input clean gas more
Stick on and be bordering on partition 260, to have when driving away the reaction gas in deposition chambers 200 to the reaction gas near partition 260
There is better dispersing effect, reacts the probability that object deposits, further increase on the surface of partition 260 to preferably reduce
The cleanliness of partition 260 enhances the effect of ultraviolet light.
Further, the clean gas can be selected from: inert gas and nitrogen, can reduce clean gas with react
A possibility that object reacts can also avoid clean gas from polluting the reactant and deposit.
Preferably, the clean gas can be selected from: helium and neon.
In embodiments of the present invention, it is helium or neon by setting clean gas, the clean gas matter of input can be made
Amount is smaller, is easy to float on the top of reactant, so that more easily automatically cleaning gas output end 242 leaves wafer chamber 210, thus
Reduce a possibility that clean gas mixes with reactant.
Further, the wafer susceptor 211 can be located at the bottom of the wafer chamber 210, and the partition 260 can be with
It is parallel to the wafer susceptor 211, the input direction of the clean gas input terminal 241 is parallel to the partition 260.
In embodiments of the present invention, the bottom of the wafer chamber 210 can be located at by setting wafer susceptor 211, it can
To improve the consistency of thickness of the sedimentary of crystal column surface；It is parallel to the wafer susceptor 211 by the way that the partition 260 is arranged,
The input direction of the clean gas input terminal 241 is parallel to the partition 260, helps to make clean gas from the output end
242 leave wafer chamber 210, further decrease a possibility that clean gas mixes with reactant.
Further, the depositing device can also include: external sediment chamber (not shown) and reactant equipment 270.
Wherein, the deposition chambers 200 can be located in the external sediment chamber, and the reactant generates equipment 270 can
To be located in the external sediment chamber and be located at outside the deposition chambers 200, the reactant equipment 270 can be used for generating institute
State reactant.
In embodiments of the present invention, by the way that external sediment chamber is arranged, equipment 270 is generated so as to which the reactant is arranged
In the external sediment chamber and it is located at outside the deposition chambers 200, helps to protect reactant generation equipment 270
Shield, and may be implemented during the deposition process, persistently wafer 218 can either be irradiated using ultraviolet light, and crystalline substance can be made
Circle 218 is not generated blocking for equipment 270 by reactant, to enhance ultraviolet light radiation response.
Further, the depositing device can also include: output pipe 232, for arranging from the deposition chambers 200
Gas after reacting out.
Further, the depositing device can also include: aspiration pump 233, the aspiration pump 233 can with it is described defeated
Pipeline 232 connects out, is used for from gas after extraction in the deposition chambers 200, to help to increase the deposit cavity
Cleanliness in room 200 improves deposition effect.
Referring to Fig. 3, Fig. 3 is a kind of flow chart of the deposition method of depositing device in the embodiment of the present invention.The deposition side
Method may include step S31 to step S32:
Step S31: wafer is set to the wafer susceptor；
Step S32: reactant is inputted to the deposition chambers by the reactant intake line, and is opened described ultraviolet
Radiant, to be irradiated in the forming process of the sedimentary to the sedimentary.
It is understood that in specific implementation, it can be defeated to the wafer chamber by the reactant intake line
Enter reactant.
In embodiments of the present invention, when inputting reactant to the wafer chamber, and the ultraviolet source is opened, it can
To realize during reaction forms sedimentary on wafer, persistently wafer is irradiated using ultraviolet light.Using the present invention
The scheme of implementation, the film that deposition can be made to obtain has balanced stress always, and stress is higher, is also just not susceptible to rupture
The defects of, help to improve the quality of device.Further, in compared with the prior art, multiple irradiating ultraviolet light is needed, is caused
Technique duration increases considerably, and using the scheme of the embodiment of the present invention, technique duration is only depositing operation duration, saves ultraviolet
At least part of the duration of line irradiation reduces production cost to improve production efficiency.
It should be pointed out that since ultraviolet light duration is typically much deeper than the duration of depositing operation, it is existing in order to reach
Ultraviolet light effect in technology can be set the technique duration and be similar in the prior art in embodiments of the present invention
Ultraviolet light irradiates duration, such as in the prior art, if needed altogether using the ultraviolet of 5 minutes deposition durations and 15 minutes
Light irradiation duration then in embodiments of the present invention can be set when technique a length of 15 minutes or so, with it is ultraviolet in the prior art
It is approximate that line irradiates duration.
Further, in embodiments of the present invention, deposition chambers and ultraviolet light chamber one will be integrated in the prior art
Deposition chamber facilitates the occupied area for reducing machinery equipment, or under identical occupied area, can be set most
Purpose machinery equipment.
Further, the step of inputting reactant to the deposition chambers by the reactant intake line can wrap
Include: using plasma generation system generates plasma as the reactant, and defeated by the reactant intake line
Enter to the deposition chambers；It wherein, is silicon nitride layer in the sedimentary that the crystal column surface is formed.
In embodiments of the present invention, the plasma that plasma production system can be generated inputs wafer chamber, with
The step of silicon nitride layer is formed using pecvd process is realized, from without being arranged plasma production system in wafer chamber
It is interior, such as plasma can remotely be generated using remote plasma generation system, to avoid plasma production system
Wafer is blocked, is conducive to wafer and preferably receives ultraviolet light.
Further, reactant is being inputted to the wafer chamber by the reactant intake line, and described in unlatching
Ultraviolet source during to be irradiated in the forming process of the sedimentary to the sedimentary, can also use
Clean gas input terminal inputs clean gas to the deposition chambers.It should be pointed out that passing through setting clean gas input terminal
And the position of clean gas output end, and the input direction that clean gas input terminal is arranged is parallel to the partition, helps
In make clean gas more from clean gas output end be discharged.
In embodiments of the present invention, clean gas input terminal and clean gas output end are set, it can be clear by inputting
Clean gas drives away the reaction gas of deposition chamber, especially drives away the reaction gas below partition, helps to reduce in partition
The probability that deposits of surface enhance the effect of ultraviolet light to improve the cleanliness of partition.
Referring to Fig. 4, Fig. 4 is a kind of the schematic diagram of the section structure of wafer in the embodiment of the present invention.
The wafer may include semiconductor substrate 400, active area, gate structure 430.
Wherein, the active area may include source region 410 and drain region 420, be located in the semiconductor substrate 400.
The gate structure 430 can be located at the surface of the semiconductor substrate 400, and the active area is located at the grid
The two sides of pole structure 430.
Further, sedimentary 440 is formed on the surface of the gate structure 430 and semiconductor substrate 400.
Wherein, the material of the sedimentary 440 can be silicon nitride.
Conventionally, as the upper surface stress and lower surface unbalanced stress of the sedimentary formed weigh, consistency is not
Foot, is easy to happen spreading rate or shrinking percentage is excessive, the dashed region in Fig. 4 is led to problems such as to rupture.
In embodiments of the present invention, persistently wafer is irradiated using ultraviolet light, the film that deposition can be made to obtain begins
The defects of there is balanced stress, and stress is higher eventually, being also just not susceptible to rupture, help to improve the quality of device.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of depositing device characterized by comprising
Deposition chambers；
Wafer susceptor is located at the deposition chamber, for placing wafer；
Ultraviolet source is located at the deposition chamber, and the ultraviolet source is adapted to provide for wafer susceptor described in directive
Ultraviolet light；
Reactant intake line forms deposition suitable for introducing a reactant into the deposition chambers to react on the wafer
Layer.
2. depositing device according to claim 1, which is characterized in that the deposition chambers include ultraviolet light chamber and wafer
Chamber is isolated between the ultraviolet light chamber and wafer chamber with partition, and the ultraviolet source is set to the ultraviolet optical cavity
Interior, the wafer susceptor are set in the cavity wafer room, and the reactant intake line will be described in reactant introducing
In cavity wafer room, wherein the ultraviolet light transmittance of the partition is greater than preset threshold.
3. depositing device according to claim 2, which is characterized in that further include:
Clean gas input terminal, positioned at the side wall of the deposition chambers, and for inputting clean gas to the deposition chambers；
Clean gas output end, positioned at the side wall of the deposition chambers, and using the central axis of the deposition chambers as axis, with institute
State clean gas input terminal central symmetry.
4. depositing device according to claim 3, which is characterized in that the clean gas input terminal is in the deposition chambers
Side wall position between the partition and the reactant intake line.
5. depositing device according to claim 3, which is characterized in that the clean gas is selected from: helium and neon.
6. depositing device according to claim 3, which is characterized in that the wafer susceptor is located at the bottom of the wafer chamber
Portion, the partition are parallel to the wafer susceptor, and the input direction of the clean gas input terminal is parallel to the partition.
7. depositing device according to claim 2, which is characterized in that further include:
Rotary part, the first end of the rotary part are connected to the roof or side wall of the deposition chambers, the rotary part
Second end connect with the ultraviolet source, the second end of the rotary part is rotated around the first end, with drive described in
Ultraviolet source rotation.
8. depositing device according to claim 1, which is characterized in that further include:
External sediment chamber, the deposition chambers are located in the external sediment chamber；
Reactant equipment, the reactant generate equipment and are located in the external sediment chamber and are located at outside the deposition chambers, institute
Reactant equipment is stated for generating the reactant.
9. a kind of deposition method of the described in any item depositing devices of claim 1 to 8 characterized by comprising
Wafer is set to the wafer susceptor；
Input reactant to the deposition chambers by the reactant intake line, and open the ultraviolet source, with
The sedimentary is irradiated in the forming process of the sedimentary.
10. the deposition method of depositing device according to claim 9, which is characterized in that the wafer includes: semiconductor lining
Bottom；
Active area is located in the semiconductor substrate；
Gate structure, positioned at the surface of the semiconductor substrate, and the active area is located at the two sides of the gate structure.
11. the deposition method of depositing device according to claim 10, which is characterized in that pass through the reactant input pipe
Deposition chambers described in road direction input reactant
Using plasma generation system generates plasma as the reactant, and defeated by the reactant intake line
Enter to the deposition chambers；
It wherein, is silicon nitride layer in the sedimentary that the crystal column surface is formed.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588610A (en) * | 1983-05-24 | 1986-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Photo-chemical vapor deposition of silicon nitride film |
| CN101088150A (en) * | 2004-11-16 | 2007-12-12 | 应用材料股份有限公司 | Tensile and compressive stressed materials for semiconductors |
| CN101593669A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method of original position ultraviolet light treatment method and stress silicon nitride film in the plasma process chamber |
| CN103871867A (en) * | 2014-03-19 | 2014-06-18 | 武汉新芯集成电路制造有限公司 | Method for forming low-stress silicon nitride thin film |
-
2018
- 2018-10-31 CN CN201811293698.5A patent/CN109385615A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588610A (en) * | 1983-05-24 | 1986-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Photo-chemical vapor deposition of silicon nitride film |
| CN101088150A (en) * | 2004-11-16 | 2007-12-12 | 应用材料股份有限公司 | Tensile and compressive stressed materials for semiconductors |
| CN101593669A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method of original position ultraviolet light treatment method and stress silicon nitride film in the plasma process chamber |
| CN103871867A (en) * | 2014-03-19 | 2014-06-18 | 武汉新芯集成电路制造有限公司 | Method for forming low-stress silicon nitride thin film |
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Application publication date: 20190226 |