CN109378284B - Laser device and working method thereof - Google Patents

Laser device and working method thereof Download PDF

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Publication number
CN109378284B
CN109378284B CN201811241857.7A CN201811241857A CN109378284B CN 109378284 B CN109378284 B CN 109378284B CN 201811241857 A CN201811241857 A CN 201811241857A CN 109378284 B CN109378284 B CN 109378284B
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laser
light path
excimer laser
emitted
process chamber
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CN109378284A (en
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田雪雁
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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Abstract

The invention provides laser equipment and a working method thereof, and belongs to the technical field of display. Wherein, laser equipment includes: an excimer laser source; the first optical module is used for conducting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source; the second optical module is used for conducting the laser emitted by the excimer laser source to a second process chamber when the laser emitted by the excimer laser source is received, and the laser stability requirement of the process executed by the second process chamber is lower than that of the process executed by the first process chamber; and the control mechanism is used for controlling the first optical module to receive the laser emitted by the excimer laser source or controlling the second optical module to receive the laser emitted by the excimer laser source. The technical scheme of the invention can reduce the cost of the laser equipment.

Description

Laser device and working method thereof
Technical Field
The invention relates to the technical field of display, in particular to laser equipment and a working method thereof.
Background
An AMOLED (Active-matrix organic light-emitting diode) is the best choice for future display technologies due to its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle, ultra-light and ultra-thin. At present, a polycrystalline silicon layer in an AMOLED display product is manufactured by adopting various manufacturing methods such as ELA (excimer laser annealing), SPC (solid phase crystallization), MIC (metal induced crystallization) and the like. The method of adopting excimer laser annealing process to obtain the polysilicon film of the thin film transistor active layer in the backboard is the only method which has been realized in mass production.
The excimer laser annealing process is a process with higher cost and higher consumable cost, a Tube (excimer laser annealing laser Tube) which is a main consumable of an ELA device exists in a certain service life, in order to ensure the laser characteristic of the excimer laser annealing process, the Tube is generally required to be replaced after dozens of billions of pulses (40-60 billions), in addition, after the ELA device is replaced with gas once every time, the service life of the gas is about 5-7 days generally, the laser characteristic of the ELA device is difficult to ensure after more than 5-7 days, therefore, the gas is required to be replaced frequently, and the cost of the excimer laser annealing process is further increased.
Disclosure of Invention
The invention aims to provide laser equipment and a working method thereof, which can reduce the cost of the laser equipment.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, there is provided a laser apparatus comprising:
an excimer laser source;
the first optical module is used for conducting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source;
the second optical module is used for conducting the laser emitted by the excimer laser source to a second process chamber when the laser emitted by the excimer laser source is received, and the laser stability requirement of the process executed by the second process chamber is lower than that of the process executed by the first process chamber;
and the control mechanism is used for controlling the first optical module to receive the laser emitted by the excimer laser source or controlling the second optical module to receive the laser emitted by the excimer laser source.
Further, the first process chamber is an excimer laser annealing process chamber;
the second process chamber is a laser lift-off process chamber.
Further, the first optical module comprises a first optical path reflector for reflecting the laser emitted by the excimer laser source to the first process chamber when the first optical module is located on the optical path of the laser emitted by the excimer laser source;
the second optical module comprises a second light path reflector and is used for reflecting the laser emitted by the excimer laser source to the second process chamber when the second optical module is positioned on the light path of the laser emitted by the excimer laser source.
Furthermore, the first light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the second light path reflecting mirror to move to the light path and is positioned in front of the first light path reflecting mirror, or the second light path reflecting mirror is moved to the outside of the light path.
Furthermore, the second light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the first light path reflecting mirror to move to the light path and before the second light path reflecting mirror, or moving the first light path reflecting mirror to the outside of the light path.
The embodiment of the invention also provides a working method of the laser device, which is applied to the laser device and comprises the following steps:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber;
and when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second optical module to reflect the laser emitted by the excimer laser source to a second process chamber.
Further, the first process chamber is an excimer laser annealing process chamber;
the second process chamber is a laser lift-off process chamber.
Further, the first optical module includes a first optical path reflector, the second optical module includes a second optical path reflector, and the operating method specifically includes:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the first process chamber;
when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the second process chamber.
Further, the working method specifically comprises the following steps:
when the laser stability emitted by the excimer laser source meets the requirement of the first process chamber, the second light path reflector is moved out of the light path by the motor;
and when the laser stability emitted by the excimer laser source does not meet the requirement of the first process chamber, the second light path reflecting mirror is moved to the light path by using the motor and is positioned in front of the first light path reflecting mirror.
Further, the working method specifically comprises the following steps:
when the laser stability emitted by the excimer laser source meets the requirement of the first process chamber, the first light path reflecting mirror is moved to the light path by using the motor and is positioned in front of the second light path reflecting mirror;
and when the laser stability emitted by the excimer laser source does not meet the requirement of the first process chamber, moving the first light path reflector out of the light path by using the motor.
The embodiment of the invention has the following beneficial effects:
in the above scheme, the laser device includes two optical modules, the first optical module can transmit the laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source, and the second optical module can transmit the laser emitted by the excimer laser source to the second process chamber when receiving the laser emitted by the excimer laser source, so that when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is used for controlling the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber; when the laser stability that the excimer laser source sent does not satisfy the requirement of first process cavity, utilize control mechanism control second optical module to reflect the laser that the excimer laser source sent to second process cavity to make excimer laser annealing laser pipe obtain make full use of, prolong excimer laser annealing laser pipe's life, practice thrift the cost of using laser equipment greatly.
Drawings
FIG. 1 is a schematic diagram of laser light from an excimer laser source conducted into an ELA chamber according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of laser light from an excimer laser source propagating into an LLO chamber according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a working method of a laser device according to an embodiment of the present invention.
Reference numerals
11 excimer laser source
12 first optical channel
13 second optical channel
14 ELA Chamber
15 first light path reflecting mirror
16 LLO chamber
17 second light path reflecting mirror
18 third light path reflecting mirror
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The excimer laser annealing process is a process with higher cost and higher consumable cost, a Tube (excimer laser annealing laser Tube) which is a main consumable of an ELA device exists in a certain service life, in order to ensure the laser characteristics of the excimer laser annealing process, the Tube is generally required to be replaced after dozens of billions of pulses (40-60 billions), the cost of one Tube is about 200-400 ten thousand RMB, and the Tube is required to be replaced once in about half a year; in addition, after the ELA equipment is replaced by gas once, the service life of the gas is about 5-7 days generally, and the laser characteristics of the ELA equipment are difficult to guarantee after the ELA equipment is replaced by more than 5-7 days, so that the gas needs to be replaced frequently, and the cost of the excimer laser annealing process is further increased.
However, in the manufacturing process of the flexible display substrate, there is a process of laser lift-off (LLO). The same excimer laser source is used for both the laser lift-off process and the excimer laser annealing process. And, the LLO process has lower requirements for laser characteristics than the ELA process.
Therefore, embodiments of the present invention provide a laser device and a working method thereof, which can reduce the cost of the laser device.
An embodiment of the present invention provides a laser apparatus including:
an excimer laser source;
the first optical module is used for conducting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source;
the second optical module is used for conducting the laser emitted by the excimer laser source to a second process chamber when the laser emitted by the excimer laser source is received, and the laser stability requirement of the process executed by the second process chamber is lower than that of the process executed by the first process chamber;
and the control mechanism is used for controlling the first optical module to receive the laser emitted by the excimer laser source or controlling the second optical module to receive the laser emitted by the excimer laser source.
In this embodiment, the laser apparatus includes two optical modules, the first optical module is capable of transmitting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source, and the second optical module is capable of transmitting laser emitted by the excimer laser source to the second process chamber when receiving the laser emitted by the excimer laser source, so that when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is used to control the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber; when the laser stability that the excimer laser source sent does not satisfy the requirement of first process cavity, utilize control mechanism control second optical module to reflect the laser that the excimer laser source sent to second process cavity to make excimer laser annealing laser pipe obtain make full use of, prolong excimer laser annealing laser pipe's life, practice thrift the cost of using laser equipment greatly.
Specifically, the first process chamber may be an excimer laser annealing process chamber; the second process chamber may be a laser lift-off process chamber. Therefore, in the same laser device, the ELA process and the LLO process can be completed, and the ELA process and the LLO process are carried out in different process chambers, so that the problem of pollution of the process chambers is avoided.
Further, the first optical module comprises a first optical path reflector for reflecting the laser emitted by the excimer laser source to the first process chamber when the first optical module is located on the optical path of the laser emitted by the excimer laser source;
the second optical module comprises a second light path reflector and is used for reflecting the laser emitted by the excimer laser source to the second process chamber when the second optical module is positioned on the light path of the laser emitted by the excimer laser source.
Furthermore, the first light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the second light path reflecting mirror to move to the light path and is positioned in front of the first light path reflecting mirror, or the second light path reflecting mirror is moved to the outside of the light path.
When the second light path reflector moves to the light path and is positioned in front of the first light path reflector, the second light path reflector receives laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the second process chamber, and the first light path reflector cannot receive the laser emitted by the excimer laser source; when the second light path reflector moves out of the light path, the second light path reflector cannot receive laser emitted by the excimer laser source, the first light path reflector receives the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is reflected to the first process chamber.
Furthermore, the second light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the first light path reflecting mirror to move to the light path and before the second light path reflecting mirror, or moving the first light path reflecting mirror to the outside of the light path.
When the first light path reflector moves to the light path and is positioned in front of the second light path reflector, the first light path reflector receives laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the first process chamber, and the second light path reflector cannot receive the laser emitted by the excimer laser source; when the first light path reflector moves out of the light path, the first light path reflector cannot receive laser emitted by the excimer laser source, and the second light path reflector receives laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the second process chamber.
Further, the control mechanism of the present invention is not limited to include a motor for controlling the movement of the first optical path mirror or a motor for controlling the movement of the second optical path mirror, and may also include a motor for controlling the movement of the first optical path mirror and a motor for controlling the movement of the second optical path mirror, so that the positions of the first optical path mirror and the second optical path mirror can be conveniently controlled, and the laser light emitted by the excimer laser source can be conveniently transmitted to the first process chamber or the second process chamber.
The first process chamber is not limited to the excimer laser annealing process chamber, and the second process chamber is not limited to the laser lift-off process chamber, and may be other types of process chambers as long as the laser stability requirement of the process performed by the second process chamber is lower than that of the process performed by the first process chamber.
The laser apparatus of the present invention will be further described with reference to the accompanying drawings, taking the first process chamber as an excimer laser annealing process chamber, and taking the second process chamber as a laser lift-off process chamber as an example.
Fig. 1 is a schematic diagram of laser light emitted by an excimer laser source and guided to an ELA chamber, as shown in fig. 1, the laser light emitted by an excimer laser source 11 sequentially exits through a first optical channel 12 and a second optical channel 13, wherein an imaging objective lens (imaging objective) and an exit mirror (exit window) may be disposed in the first optical channel 12 and the second optical channel 13, and the excimer laser source 11 may include a single Tube, two tubes, four tubes, or six tubes.
The laser emitted from the excimer laser source 11 can be reflected to the ELA chamber 14 by the first optical path reflector 15 to perform the ELA process, and a large amount of N is filled in the ELA chamber 142So as to be at N2And performing ELA process under the atmosphere. The first optical path mirror 15 may be fixed to be positioned in the propagation direction of the laser light emitted from the excimer laser light source 11.
Fig. 2 is a schematic diagram of transmitting laser light emitted by the excimer laser source to the LLO chamber according to the embodiment of the present invention, and as shown in fig. 2, a second optical path reflector 17 and a third optical path reflector 18 may be additionally disposed in a propagation direction of the laser light emitted by the excimer laser source 11, and the laser light emitted by the excimer laser source 11 is reflected to the LLO chamber 16 through the cooperation of the second optical path reflector 17 and the third optical path reflector 18, so as to perform the LLO process. The position of the second optical path reflecting mirror 17 can be controlled by a motor, the second optical path reflecting mirror 17 can be moved to the propagation direction of the laser emitted by the excimer laser source 11 by the motor, the second optical path reflecting mirror 17 can also be controlled to move to the outside of the propagation direction of the laser emitted by the excimer laser source 11, and the position of the third optical path reflecting mirror 18 can be fixed and unchanged and is located above the LLO chamber 16.
When the second optical path reflecting mirror 17 is moved by the motor to a position outside the propagation direction of the laser light emitted from the excimer laser source 11, the laser light emitted from the excimer laser source 11 is irradiated onto the first optical path reflecting mirror 15, and the first optical path reflecting mirror 15 reflects the laser light emitted from the excimer laser source 11 to the ELA chamber 14, at which time the laser apparatus may perform an ELA process; when the second optical path mirror 17 is moved by the motor to the propagation direction of the laser beam emitted from the excimer laser source 11 and located in front of the first optical path mirror 15, the laser beam emitted from the excimer laser source 11 can be reflected to the third optical path mirror 18 and further to the LLO chamber 16, and at this time, the laser device can perform the LLO process, and the ELA process is not performed any more.
Through the laser equipment of this embodiment, can be so that Tube obtains make full use of, use to beat billions pulse at Tube life-span after, still can prolong Tube's life, utilize Tube to carry out the LLO technology, use Tube to beat after billion pulse all the time, practiced thrift laser equipment's cost so greatly, also can guarantee the effect of two technologies simultaneously. In addition, after the ELA equipment is replaced by gas once each time, the ELA chamber is produced in a time period with good effect, and the LLO chamber is produced in the next few days, so that the cost is greatly saved, and the effects of two processes are ensured. By adopting the technical scheme of the embodiment, more than ten million RMB can be saved for each laser device.
An embodiment of the present invention further provides a working method of a laser device, which is applied to the laser device described above, and as shown in fig. 3, the working method includes:
step 101: when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber;
and when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second optical module to reflect the laser emitted by the excimer laser source to a second process chamber.
In this embodiment, the laser apparatus includes two optical modules, the first optical module is capable of transmitting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source, and the second optical module is capable of transmitting laser emitted by the excimer laser source to the second process chamber when receiving the laser emitted by the excimer laser source, so that when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is used to control the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber; when the laser stability that the excimer laser source sent does not satisfy the requirement of first process cavity, utilize control mechanism control second optical module to reflect the laser that the excimer laser source sent to second process cavity to make excimer laser annealing laser pipe obtain make full use of, prolong excimer laser annealing laser pipe's life, practice thrift the cost of using laser equipment greatly.
Specifically, the first process chamber may be an excimer laser annealing process chamber; the second process chamber may be a laser lift-off process chamber. Therefore, in the same laser device, the ELA process and the LLO process can be completed, and the ELA process and the LLO process are carried out in different process chambers, so that the problem of pollution of the process chambers is avoided.
Further, the first optical module includes a first optical path reflector, the second optical module includes a second optical path reflector, and the operating method specifically includes:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the first process chamber;
when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the second process chamber.
Furthermore, the first light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source; the control mechanism includes: a motor for controlling the movement of the second optical path reflecting mirror, configured to move the second optical path reflecting mirror to the optical path and before the first optical path reflecting mirror, or move the second optical path reflecting mirror to the outside of the optical path, where the operating method specifically includes:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the second light path reflector is moved out of the light path by using the motor, so that the second light path reflector cannot receive the laser emitted by the excimer laser source, and the first light path reflector receives the laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the first process chamber;
when the laser stability that excimer laser source sent does not satisfy first process chamber's requirement, utilize the motor will the second light path speculum move to the light path just is located before the first light path speculum, the laser that excimer laser source sent will be received to second light path speculum like this to with the laser reflection that excimer laser source sent to second process chamber, first light path speculum will not receive the laser that excimer laser source sent.
Furthermore, the second light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source; the control mechanism includes: a motor for controlling the movement of the first optical path reflecting mirror, configured to move the first optical path reflecting mirror to the optical path and before the second optical path reflecting mirror, or move the first optical path reflecting mirror to the outside of the optical path, where the operating method specifically includes:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the motor is utilized to move the first light path reflector to the light path and before the second light path reflector, so that the first light path reflector receives the laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the first process chamber, and the second light path reflector cannot receive the laser emitted by the excimer laser source;
when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the motor is utilized to move the first light path reflector out of the light path, so that the first light path reflector cannot receive the laser emitted by the excimer laser source, and the second light path reflector receives the laser emitted by the excimer laser source and reflects the laser emitted by the excimer laser source to the second process chamber.
The working method of the laser apparatus of the present invention is further described with reference to the drawings, taking the first process chamber as an excimer laser annealing process chamber, and taking the second process chamber as a laser lift-off process chamber as an example.
Fig. 1 is a schematic diagram of laser light emitted by an excimer laser source and guided to an ELA chamber, as shown in fig. 1, the laser light emitted by an excimer laser source 11 sequentially exits through a first optical channel 12 and a second optical channel 13, wherein an imaging objective lens (imaging objective) and an exit mirror (exit window) may be disposed in the first optical channel 12 and the second optical channel 13, and the excimer laser source 11 may include a single Tube, two tubes, four tubes, or six tubes.
The laser emitted from the excimer laser source 11 can be reflected to the ELA chamber 14 by the first optical path reflector 15 to perform the ELA process, and a large amount of N is filled in the ELA chamber 142So as to be at N2And performing ELA process under the atmosphere. The first optical path mirror 15 may be fixed to be positioned in the propagation direction of the laser light emitted from the excimer laser light source 11.
Fig. 2 is a schematic diagram of transmitting laser light emitted by the excimer laser source to the LLO chamber according to the embodiment of the present invention, and as shown in fig. 2, a second optical path reflector 17 and a third optical path reflector 18 may be additionally disposed in a propagation direction of the laser light emitted by the excimer laser source 11, and the laser light emitted by the excimer laser source 11 is reflected to the LLO chamber 16 through the cooperation of the second optical path reflector 17 and the third optical path reflector 18, so as to perform the LLO process. The position of the second optical path reflecting mirror 17 can be controlled by a motor, the second optical path reflecting mirror 17 can be moved to the propagation direction of the laser emitted by the excimer laser source 11 by the motor, the second optical path reflecting mirror 17 can also be controlled to move to the outside of the propagation direction of the laser emitted by the excimer laser source 11, and the position of the third optical path reflecting mirror 18 can be fixed and unchanged and is located above the LLO chamber 16.
When the second optical path reflecting mirror 17 is moved by the motor to a position outside the propagation direction of the laser light emitted from the excimer laser source 11, the laser light emitted from the excimer laser source 11 is irradiated onto the first optical path reflecting mirror 15, and the first optical path reflecting mirror 15 reflects the laser light emitted from the excimer laser source 11 to the ELA chamber 14, at which time the laser apparatus may perform an ELA process; when the second optical path mirror 17 is moved by the motor to the propagation direction of the laser beam emitted from the excimer laser source 11 and located in front of the first optical path mirror 15, the laser beam emitted from the excimer laser source 11 can be reflected to the third optical path mirror 18 and further to the LLO chamber 16, and at this time, the laser device can perform the LLO process, and the ELA process is not performed any more.
Through the technical scheme of this embodiment, can be so that Tube obtains make full use of, use to beat billions pulse at Tube life-span after, still can prolong Tube's life, utilize Tube to carry out the LLO technology, use Tube to beat billion pulse after all the time, practiced thrift laser equipment's cost so greatly, also can guarantee the effect of two technologies simultaneously. In addition, after the ELA equipment is replaced by gas once each time, the ELA chamber is produced in a time period with good effect, and the LLO chamber is produced in the next few days, so that the cost is greatly saved, and the effects of two processes are ensured. By adopting the technical scheme of the embodiment, more than ten million RMB can be saved for each laser device.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (9)

1. A laser apparatus, comprising:
an excimer laser source;
the first optical module is used for conducting laser emitted by the excimer laser source to the first process chamber when receiving the laser emitted by the excimer laser source;
the second optical module is used for conducting the laser emitted by the excimer laser source to a second process chamber when the laser emitted by the excimer laser source is received, and the laser stability requirement of the process executed by the second process chamber is lower than that of the process executed by the first process chamber;
the control mechanism is used for controlling the first optical module to receive the laser emitted by the excimer laser source or controlling the second optical module to receive the laser emitted by the excimer laser source;
the first process chamber is an excimer laser annealing process chamber;
the second process chamber is a laser lift-off process chamber.
2. Laser device according to claim 1,
the first optical module comprises a first light path reflector and a second optical module, wherein the first light path reflector is used for reflecting laser emitted by the excimer laser source to the first process chamber when the first optical module is positioned on a light path of the laser emitted by the excimer laser source;
the second optical module comprises a second light path reflector and is used for reflecting the laser emitted by the excimer laser source to the second process chamber when the second optical module is positioned on the light path of the laser emitted by the excimer laser source.
3. Laser device according to claim 2,
the first light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the second light path reflecting mirror to move to the light path and is positioned in front of the first light path reflecting mirror, or the second light path reflecting mirror is moved to the outside of the light path.
4. Laser device according to claim 2,
the second light path reflector is positioned in the direction of the light path of the laser emitted by the excimer laser source;
the control mechanism includes:
and the motor is used for controlling the first light path reflecting mirror to move to the light path and before the second light path reflecting mirror, or moving the first light path reflecting mirror to the outside of the light path.
5. A method for operating a laser device, the method being applied to a laser device according to any one of claims 1 to 4, comprising:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first optical module to reflect the laser emitted by the excimer laser source to the first process chamber;
and when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second optical module to reflect the laser emitted by the excimer laser source to a second process chamber.
6. The method of operating a laser device according to claim 5,
the first process chamber is an excimer laser annealing process chamber;
the second process chamber is a laser lift-off process chamber.
7. The method according to claim 6, wherein the first optical module comprises a first optical path mirror, and the second optical module comprises a second optical path mirror, and the method specifically comprises:
when the stability of the laser emitted by the excimer laser source meets the requirement of the first process chamber, the control mechanism is utilized to control the first light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the first process chamber;
when the stability of the laser emitted by the excimer laser source does not meet the requirement of the first process chamber, the control mechanism is utilized to control the second light path reflector to be positioned on the light path of the laser emitted by the excimer laser source, and the laser emitted by the excimer laser source is conducted to the second process chamber.
8. The method of operating a laser device according to claim 7, applied to the laser device according to claim 3, the method specifically comprising:
when the laser stability emitted by the excimer laser source meets the requirement of the first process chamber, the second light path reflector is moved out of the light path by the motor;
and when the laser stability emitted by the excimer laser source does not meet the requirement of the first process chamber, the second light path reflecting mirror is moved to the light path by using the motor and is positioned in front of the first light path reflecting mirror.
9. The method of operating a laser device according to claim 7, applied to the laser device according to claim 4, the method specifically comprising:
when the laser stability emitted by the excimer laser source meets the requirement of the first process chamber, the first light path reflecting mirror is moved to the light path by using the motor and is positioned in front of the second light path reflecting mirror;
and when the laser stability emitted by the excimer laser source does not meet the requirement of the first process chamber, moving the first light path reflector out of the light path by using the motor.
CN201811241857.7A 2018-10-24 2018-10-24 Laser device and working method thereof Active CN109378284B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105730020A (en) * 2016-02-01 2016-07-06 广东正业科技股份有限公司 Laser processing equipment and optical path switching device thereof
CN106654814A (en) * 2017-03-09 2017-05-10 中国科学院合肥物质科学研究院 Dual-purpose excimer laser system useful for crystallization and stripping
CN207267116U (en) * 2017-09-04 2018-04-24 大族激光科技产业集团股份有限公司 A kind of integrated laser processing unit (plant)
CN108303797A (en) * 2017-11-16 2018-07-20 杭州先临易加三维科技有限公司 A kind of light path switching system, SLA printing devices and its Method of printing based on SLA technology
CN207663144U (en) * 2017-11-16 2018-07-27 杭州先临易加三维科技有限公司 A kind of light path switching system and SLA printing devices based on SLA technology

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019927A1 (en) * 2011-07-21 2013-01-24 Zimmerman Scott M Use of freestanding nitride veneers in semiconductor devices
WO2017087584A1 (en) * 2015-11-17 2017-05-26 Newport Corporation Homogeneous laser light source for area processing applications
KR101983327B1 (en) * 2016-07-26 2019-05-29 에이피시스템 주식회사 Laser processing apparatus
EP4331768A3 (en) * 2016-07-27 2024-04-24 TRUMPF Laser GmbH Laser line illumination

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105730020A (en) * 2016-02-01 2016-07-06 广东正业科技股份有限公司 Laser processing equipment and optical path switching device thereof
CN106654814A (en) * 2017-03-09 2017-05-10 中国科学院合肥物质科学研究院 Dual-purpose excimer laser system useful for crystallization and stripping
CN207267116U (en) * 2017-09-04 2018-04-24 大族激光科技产业集团股份有限公司 A kind of integrated laser processing unit (plant)
CN108303797A (en) * 2017-11-16 2018-07-20 杭州先临易加三维科技有限公司 A kind of light path switching system, SLA printing devices and its Method of printing based on SLA technology
CN207663144U (en) * 2017-11-16 2018-07-27 杭州先临易加三维科技有限公司 A kind of light path switching system and SLA printing devices based on SLA technology

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