CN1093489A - Plate type X-ray image enhancement device and manufacture method thereof - Google Patents
Plate type X-ray image enhancement device and manufacture method thereof Download PDFInfo
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- CN1093489A CN1093489A CN 94101756 CN94101756A CN1093489A CN 1093489 A CN1093489 A CN 1093489A CN 94101756 CN94101756 CN 94101756 CN 94101756 A CN94101756 A CN 94101756A CN 1093489 A CN1093489 A CN 1093489A
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Abstract
A kind of plate type X-ray image enhancement device that adopts compound X ray photocathode, comprise input window, aluminium lamination, emitter layer, microchannel plate, phosphor screen, output window, shell, be characterized in that said emitter layer is made of heavy metal layer and transmission secondary emitter, in order further to strengthen the electron number that enters in the microchannel, input end face at microchannel plate can increase the light metal rete, thin metal grid mesh and transmission secondary electron emission layer.Have that high sensitivity, flicker noise are low, the characteristics of room and time good resolution.
Description
The present invention relates to be applied to the plate type X-ray image enhancement device and the manufacture method thereof of medical perspective and diagnosis and industrial nondestructive inspection, particularly adopt the plate type X-ray image enhancement device and the manufacture method thereof of compound X ray photocathode.
Compare with the electrostatic focusing type inverted image formula X ray image intensifier that tradition is used, plate type X-ray image enhancement device has compact conformation, room and time resolution, non-flanged picture distortion and output image area in light weight, that volume is little, high are big, but advantages such as Direct observation.
Among the Chinese patent CN88102912 of people such as the present application people She Yongzheng invention a kind of plate type X-ray image enhancement device was as shown in Figure 4 proposed.This class X ray image intensifier is provided with photocathode, plays the microchannel plate 408 and the output phosphor screen 413 of electronics multiplication, proximity focusing between microchannel plate 408 and the output phosphor screen 413 in the vacuum envelope 411 with input window 401.Wherein, photocathode 412 is that X ray is directly changed into photoelectronic X ray photocathode 412, proximity focusing between X ray photocathode 412 and the microchannel plate 408.This class X ray image intensifier can have high-resolution guaranteeing have on the basis of suitable X ray conversion efficiency.And its preparation technology is simple, the rate of finished products height.But still there is a following problem: the first, with the human eye Direct observation time, the flicker noise of image intensifier is bigger, in that to observe thick position and X ray principal ray dosage particularly serious when low.The spatial resolution of image intensifier will be reduced; The second, the efficient of X ray photocathode is still lower, thus when utilization require x-ray dose bigger, thereby increase the X source power of radioscopy instrument, instruments weight, volume are increased, this problem is even more serious in portable radioscopy instrument; The 3rd, the X ray photocathode of previous development is lower in sigmatron its sensitivity of zone, and then influences the application of image intensifier at the hard X ray wave band.
The object of the invention is to provide a kind of employing compound X ray photocathode, by improving plate type X-ray image enhancement device and the manufacture method thereof that the X ray conversion efficiency solves above problem.
Typical plate type X-ray image enhancement device is a vacuum device that adopts X ray photocathode, microchannel plate and viewing screen.Electronics all is proximity focusing between X ray and the microchannel plate and between microchannel plate and the viewing screen.Inventor She Yong is just waiting this class image intensifier studies show that further the flicker noise on the viewing screen is from the exponential pulse amplitude distribution of electron gain in the channel plate.This is to obtain to double by repeatedly colliding with vias inner walls under electric field quickens because of electronics in single passage.If absorbing X-ray only produces a photoelectron and enters a certain passage, because the statistical property of multiplicative process, the electron gain that the single photoelectron of each incident produces is not a constant, change but be exponential form, thereby on viewing screen, be revealed as the variation of brightness, i.e. flicker noise.Then the exponential distribution form will change and tend towards stability but a plurality of not to be one as if the photoelectron number that is incident in same passage simultaneously, thereby flicker noise is reduced.When representative absorbs the photoelectron number (comprising just photoelectron and secondary electron) that enters same passage when an X-ray subevent produces greater than for example 20 the time, the flicker noise of microchannel plate will be restrained.Therefore, be to eliminate flicker noise, need provide a kind of mechanism that doubles to make the photoelectron number that is produced behind X-ray of the every absorption of X ray photocathode, that is to say, need to improve the conversion efficiency of X ray greater than (or equaling) 20.Inventive concept of the present invention that Here it is.
According to above invention thought, improved plate type X-ray image enhancement device mainly is on the X ray photocathode or microchannel plate input etc. locates to form compound X ray photocathode.In the compound X ray photocathode of this class, some not only absorbs X-ray and produces photoelectron just, and the first photoelectron of high energy is played the electronics multiplication; Some not only plays multiplication to photoelectron and the secondary electron that is produced, and X-ray that absorbs own also produces high energy just photoelectron and secondary electron.Therefore, compound X ray photocathode is converted to electronics with above-mentioned number of ways with X ray, thereby has higher X ray conversion efficiency.
Among the present invention, prior art having been proposed improvement, mainly is at the anode substrate of X ray photocathode aluminium foil supporting layer (abbreviation aluminium lamination) the heavy metal layer of having gone up deposit for example, as X ray absorber and first photoelectron emissions body.Deposit one transmission secondary emitter again on the heavy metal layer.The first photoelectron of high energy that the heavy metal layer absorbs X-ray generation is doubled by the transmission secondary emitter, the electron number that enters the same passage of microchannel plate will simultaneously be increased, thereby reduce owing to electron gain in the passage is the flicker noise that the exponential pulse degree distributes and causes, the X ray photo cathode sensitivity increases simultaneously, and is particularly evident at the high-energy X-ray subrange.
Among the present invention, input end face at microchannel plate increases the light metal membrane electrode, thin metal grid mesh and transmission secondary electron emission layer, its manufacture method are to cover one deck thin metal film, aperture plate one outgrowth transmission secondary electron emission layer on the light metal film on the fine wire aperture plate.This transmission secondary electron emission layer is the photoelectron of front X ray photocathode (for example aforementioned heavy metal layer and transmission secondary emitter) generation and the transmission secondary electron emission dynode of secondary electron, the absorber of incident X-rays be can also be further used as, and high energy just photoelectron and secondary electron produced therein.Thereby the electron number that enters same passage is further increased, and help further reducing the flicker noise of microchannel plate, further improve the X ray photo cathode sensitivity simultaneously.
Among the present invention, compound X ray photocathode can also be prepared on the microchannel plate input vias inner walls, is formed with the secondary electron emission layer that density reduces from the inwall to the outer surface gradually.Can further improve the sensitivity of X ray image intensifier like this.
Its manufacturing process of plate type X-ray image enhancement device of the present invention is close with traditional handicraft basically, but what locate to form at X ray photocathode or microchannel plate etc. is compound X ray photocathode, thereby this technology is easier equally, can guarantee high rate of finished products.
These and other objects of the present invention, feature and effect by following will be more clear with reference to accompanying drawing to the explanation of embodiment.
Fig. 1 is the structural representation of plate type X-ray image enhancement device first embodiment of the present invention.
Fig. 2 is the structural representation of plate type X-ray image enhancement device second embodiment of the present invention.
Fig. 3 is the structural representation of compound X ray photocathode in the third embodiment of the invention.
Fig. 4 is the structural representation of existing plate type X-ray image enhancement device.
Referring to Fig. 1, do not go out the structure of first embodiment of the invention among the figure.Among the figure, the 101st, by thin metal foil, as aluminium, titanium, kovar alloy paper tinsel, or the input window formed of flat glass.The 102nd, the cathode substrate of X ray photocathode is made up of light metal such as aluminium foil.Strong electrostatic interaction when its thickness should make aluminium foil bear proximity focusing is unlikely to the incident X-rays that obviously decays again.For energy is the X ray of 50-80Kev, and the aluminium foil or the titanium foil of 30-50 micron thickness are proper.The 103rd, the heavy metal layer of being formed by heavy metal such as tantalum, tungsten, bismuth, gold or platinum thin layer.Its optimum thickness depends on the X-ray energy of incident, and the L of material or K are critical strike voltage and density of material.104 is high efficiency transmission secondary emitters, is made of high secondary electron emission factor material, as cesium iodide, cesium bromide, potassium chloride, cesium chloride, thallium bromide or magnesium oxide etc.With cesium iodide and cesium bromide is example, both can evaporate to be high-density state under high vacuum, also can evaporate under certain inert gas such as Ar Pressure, forms low-density layer.The optimum thickness of cesium iodide or cesium bromide layer depends on the energy of photoelectron that produces in the heavy metal layer 103, thereby depends on the X-ray energy and the heavy metal material of incident.The cesium iodide layer of normal density is when surface adsorption has the alkali metal caesium, and its transmission secondary electron emission factor can reach 25, can satisfy to absorb the requirement that arrives photoelectron number＞20 of same passage when producing behind X-ray.And concerning loose cesium iodide layer, its secondary electronic conductance gain more surpasses 100, in the double close-up plate type X-ray image enhancement device, therefore the static field intensity when its static field intensity can be led gain above measurement secondary electron electricity also may reach so high electron gain.Outside the removing heavy metals layer 103, the cesium iodide layer also can be used as effective absorber of incident X-rays, and can be used as just photoelectron and secondary electrical component.Slowly evaporation cesium iodide or cesium bromide under about 2 torr ar pressures can obtain relative density and be 2% low-density layer.
Fig. 2 is the schematic diagram of the another kind of compound X ray photocathode that proposes of the present invention.206 is aperture plates that a metal fine-structure mesh constitutes, and can adopt 10 general in television camera tube lines/mm, 20 lines/mm, and the aperture plate of 33/mm is formed.Side at thin aperture plate forms an organic film, vacuum deposition one light metal film 205 on organic film, the aluminium film of for example about 10 nanometer thickness, this aluminium film 205 both as supporting layer also as electrode.In atmosphere, be heated to 400 ℃ then, make the organic membrane vaporization.Aluminium film 205 also can adopt floating aluminium method to form: form sodium chloride layers in the evaporation on glass of plane optics, the certain thickness aluminium film of vacuum deposition places deionized water then thereon, and sodium chloride layers is dissolved, and the aluminium film is bubbled through the water column, and is bonded on the aperture plate then and dries.Supporting layer 205 also can be the di-aluminium trioxide film that approaches, and prepares the di-aluminium trioxide film of certain thickness (about 5 nanometers) and it is sticked on the microchannel plate 108 with anode oxidation method.A side vacuum deposition skim transmission secondary electron emission layer 207 of aperture plate 206 on supporting layer 205, the described transmission secondary emitter of this thin layer and previous embodiment 104 is similar, and material can be cesium iodide, cesium bromide, potassium chloride, cesium chloride, thallium bromide or magnesium oxide etc.The thickness of this thin layer 207 is relevant with transmission secondary emitter 104 electrons emitted energy, in the incident electron energy range of 1-2Kev, when the density of this thin layer 207 is close with bulk density, is advisable with the 5-15 nanometer.Similar with transmission secondary emitter 104, this thin layer 207 also can be prepared into low-density layer, and when relative density was 2% left and right sides, layer thickness control was 0.25～0.75 micron.The transmission secondary emitter 104 of aperture plate 206 and compound X ray photocathode is apart less than 0.4mm, and the two making alive 1.0-1.5KV makes the photoelectron of transmission secondary emitter 104 emissions reach time multiplication by stages electronics proximity focusing in aperture plate 206.After penetrating supporting layer 205, photoelectron and the further multiplication transmission secondary electron emission layer 207 of time multiplication by stages electronics from 104 emissions of transmission secondary emitter further increase the secondary electrical subnumber that is incident in microchannel plate.Transmission secondary electron emission layer 207 also can absorb a small amount of incident X-rays, produces just photoelectron and secondary emission electronics therein.
Transmission secondary emitter 104(Fig. 1) or transmission secondary electron emission layer 207(Fig. 2) emission and the first photoelectron of multiplication and the input that time multiplication by stages electronics enters microchannel plate 108.Add about 1000 volts of voltages at microchannel plate 108 two ends, make the electronics collision channel inwall repeatedly in passage that is incident in microchannel plate 108, the average secondary electron emission coefficiency of each collision is greater than 1, thereby bigger 10000 times than input approximately from microchannel plate output electrons emitted number.On phosphor screen 109, reproduce the visible images that brightness has increased from the electronics proximity focusing of microchannel plate 108 output.
Among Fig. 1 and Fig. 2,110 is output window, and phosphor screen 109 promptly prepares thereon.111 is the image intensifier shell, is made of glass or pottery, and encapsulation back homogeneous tube vacuum degree is better than 0.00001Pa.
Consult Fig. 3, the 312nd, the vias inner walls of microchannel plate generally is made up of secondary emitter.Vacuum deposition secondary electron emission layer 314 on the input vias inner walls, this electron emission layer is overflowed to help secondary electron and present the low-density state at outer surface close with bulk density near its density of vias inner walls place.The secondary electron emission layer of microchannel plate inwall deposit also produces effective absorption and first photoelectron of emission and secondary electron to incident X-rays, the density of secondary electron emission layer at the vias inner walls place is the 50%-100% of normal density, thick is the 2-3 micron, reduce gradually toward surface direction density then, the density of surface is the 5-10% of normal density.
Three parts such as the compound X ray photocathode of preferred embodiment of the present invention comprises 103 and 104,314 among 205-207 and Fig. 3.Incident X-rays absorbs through the compound X ray photocathode of above-mentioned this three part, compares with existing X ray photocathode, and effective absorption of X ray is obviously increased, and is particularly evident in the high-energy X-ray subdivision.Owing to increased by two transmission multipacting layers 104 and 207 parts as compound X ray negative electrode.Absorb the electron number that is incident in same passage behind X-ray simultaneously and obviously increase making, electron gain is the flicker noise that exponential pulse distributes and causes in the passage thereby restrain effectively.All in same passage, double because the compound X ray photocathode of this three part absorbs the photoelectron and the transmission secondary electron that produce behind incident X-ray, so image resolution ratio is still very high.
Consult Fig. 2, the 101st, input window is the titanium foil of 0.1-0.2mm.Thin titanium foil reduces the scattering of incident X-rays, and the X ray transmitance is very high, particularly to low energy X ray.During utilization, the voltage of aluminium foil 2 is-2500～-2000V, aperture plate 206 and microchannel plate 108 input equipotentials are-950～-1200V, the output head grounding of microchannel plate 108 (V=0).Viewing screen voltage is+8000～+ 10, between the 000V.The outer surface of control transmission secondary emitter 104 and spacing＜0.4 of light metal membrane electrode 205 millimeter, the spacing of microchannel plate output and viewing screen is the 2-3 millimeter, output image brightness can be greater than 40 candela/metre2s (nit).The available field of view of X ray image intensifier can reach 50mm to 200mm, and input picture is 1: 1 with output image diameter ratio.Output image is big, can Direct observation.
For simplifying technology, the 102-104 part of compound X ray photocathode can be pasted together with microchannel plate 108 inputs, only comprise the compound X ray photocathode of two parts.Perhaps, transmission secondary emitter 104 and microchannel plate 108 are also separable, and the centre adds piezoelectricity and realizes proximity focusing.Perhaps adopt existing X ray photocathode, the 205-207 that adds compound X ray photocathode among second embodiment partly constitutes.
More than narration only is one exemplary embodiment of the present invention, but basic skills among the present invention and thought can have multiple variation, all can implement, and they should be limited by appending claims.
Claims (22)
1, a kind of plate type X-ray image enhancement device, in having the vacuum envelope of input window, be provided with the X ray photocathode, play the microchannel plate of electronics multiplication and export phosphor screen, between microchannel plate and the output phosphor screen and all proximity focusings between X ray photocathode and the microchannel plate, it is characterized in that described X ray time very the multiple transformation way of mat X ray is converted to the compound X ray photocathode of electronics.
2, plate type X-ray image enhancement device as claimed in claim 1 is characterized in that described compound X ray photocathode comprises the heavy metal layer that is formed on the cathode substrate as X ray absorber and photoelectron emissions body, and the transmission secondary emitter.
3, plate type X-ray image enhancement device as claimed in claim 1 or 2 is characterized in that described compound X ray photocathode comprises light metal membrane electrode, fine wire aperture plate and the transmission secondary electron emission layer that is formed at the microchannel plate input end face.
4, plate type X-ray image enhancement device as claimed in claim 1 or 2 is characterized in that described compound X ray photocathode comprises to be formed on the microchannel plate input wing passage inwall secondary electron emission layer that its density reduces to outer surface gradually from inwall.
5, plate type X-ray image enhancement device as claimed in claim 1 or 2 is characterized in that described input window is a kind of in titanium foil, aluminium foil, kovar alloy paper tinsel and the flat glass.
6, plate type X-ray image enhancement device as claimed in claim 2 is characterized in that described its material of heavy metal layer can elect a kind of in tantalum, tungsten, lead, bismuth, gold and the paper tinsel as.
7, plate type X-ray image enhancement device as claimed in claim 6, the thickness that it is characterized in that described heavy metal layer depends on the energy of its material and X ray.
8, plate type X-ray image enhancement device as claimed in claim 1 or 2 is characterized in that described cathode substrate is an aluminium lamination.
9, plate type X-ray image enhancement device as claimed in claim 3 is characterized in that the aluminium film that described light metal membrane electrode is a 5-20mm thickness or the alundum (Al film of 3-10mm thickness.
10, plate type X-ray image enhancement device as claimed in claim 2 is characterized in that a kind of in the optional following material of described transmission secondary emitter: cesium iodide, cesium bromide, potassium chloride, cesium chloride, thallium bromide, KBr, sodium iodide, sodium bromide, KI, rubidium chloride and magnesium oxide.
11, plate type X-ray image enhancement device as claimed in claim 10 is characterized in that described transmission secondary emitter material is a cesium iodide, and its density is near normal bulk density.
12, plate type X-ray image enhancement device as claimed in claim 10, the material that it is characterized in that described transmission secondary emitter are the low-density cesium iodides, and its density is 2% of bulk density.
13, plate type X-ray image enhancement device as claimed in claim 10, it is characterized in that described transmission secondary emitter material is a density continually varying sulfonation caesium, near the approaching normal bulk density of the density of heavy metal layer one side, the density of outmost surface one side is the 2-5% of bulk density.
14, plate type X-ray image enhancement device as claimed in claim 3 is characterized in that a kind of in the optional following material of described transmission secondary electron emission layer: cesium iodide, cesium bromide, potassium chloride, cesium chloride, thallium bromide, KBr, KI, sodium iodide, sodium bromide, rubidium chloride and magnesium oxide.
15, plate type X-ray image enhancement device as claimed in claim 14 is characterized in that described transmission secondary electron emission layer is the cesium iodide film of 5-15nm thickness, and its density is near normal bulk cesium iodide density.
16, plate type X-ray image enhancement device as claimed in claim 14 is characterized in that described transmission secondary electron emission layer is the low-density sulfonation caesium film of 0.25-0.75 μ m thickness, and its density is about 2% of bulk density.
17, plate type X-ray image enhancement device as claimed in claim 1 or 2, it is characterized in that described input window is one of following situation: its thickness range is the aluminium foil input window of 0.3-0.7mm; Its thickness is the kovar alloy paper tinsel input window of 0.1mm; Its thickness range is the titanium foil input window of 0.1-0.2mm; Its thickness range is the flat glass input window of 2-10mm.
18, a kind of plate type X-ray image enhancement device manufacture method comprises: make first manufacturing process that comprises input window, output window and fluoroscopic vacuum envelope; Manufacturing comprises second manufacturing process of the microchannel plate of many passages; Make the 3rd manufacturing process of X ray photocathode; Configuration X ray photocathode, microchannel plate vacuumize the 4th manufacturing process that encapsulates again in described vacuum envelope; It is characterized in that in the second and/or the 3rd manufacturing process, comprising at least that a compound X ray photocathode forms step, on one of them surface of cathode substrate, microchannel plate input end face and the input wing passage inwall of X ray photocathode, form the multiple transformation way of mat and make X ray convert the compound X ray photocathode of electronics to.
19, plate type X-ray image enhancement device manufacture method as claimed in claim 18 is characterized in that it is to form the compound X ray photocathode of being made up of heavy metal layer and transmission secondary emitter in the 3rd manufacturing process on the cathode substrate of X ray photocathode that described complex light negative electrode forms step.
20, plate type X-ray image enhancement device manufacture method as claimed in claim 18 is characterized in that it is to form the compound X ray photocathode of being made up of light metal membrane electrode, fine wire aperture plate and transmission secondary electron emission layer in second manufacturing process on the microchannel plate input end face that described complex light negative electrode forms step.
21, plate type X-ray image enhancement device manufacture method as claimed in claim 18 is characterized in that it is to form the compound X ray photocathode that secondary electron emission layer that density reduces to outer surface gradually from inwall is formed in second manufacturing process on the distolateral vias inner walls of microchannel plate input that described complex light negative electrode forms step.
22, as claim 19 or 21 described plate type X-ray image enhancement device manufacture methods, it is characterized in that after the second and the 3rd manufacturing process all finishes, comprise that also one sticks on the 5th manufacturing process on the microchannel plate input end face with the X ray photocathode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN94101756A CN1048578C (en) | 1994-02-08 | 1994-02-08 | Plate type x-ray image enhancement device and the mfg. method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN94101756A CN1048578C (en) | 1994-02-08 | 1994-02-08 | Plate type x-ray image enhancement device and the mfg. method |
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| CN1093489A true CN1093489A (en) | 1994-10-12 |
| CN1048578C CN1048578C (en) | 2000-01-19 |
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| CN94101756A Expired - Fee Related CN1048578C (en) | 1994-02-08 | 1994-02-08 | Plate type x-ray image enhancement device and the mfg. method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465295A (en) * | 2014-10-27 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Novel micro-channel plate electrode with ion blocking function and manufacturing method thereof |
| CN108445024A (en) * | 2018-05-17 | 2018-08-24 | 南京航空航天大学 | A kind of imaging method of high-speed object X-ray Real Time Image System and system |
| CN109300765A (en) * | 2018-09-29 | 2019-02-01 | 北方夜视技术股份有限公司 | A method of it reducing microchannel plate and exports ion flicker noise |
| CN110678956A (en) * | 2017-06-30 | 2020-01-10 | 浜松光子学株式会社 | Electron multiplier |
| CN111584331A (en) * | 2020-05-27 | 2020-08-25 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
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| CN114097057A (en) * | 2019-06-26 | 2022-02-25 | 浜松光子学株式会社 | Electron tube and image pickup apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1014478B (en) * | 1988-05-13 | 1991-10-23 | 厦门大学 | X-ray photocathode, image enhancer and imaging instrument |
| US5225670A (en) * | 1991-03-06 | 1993-07-06 | Csl Opto-Electronics Corp. | X-ray to visible image converter with a cathode emission layer having non-uniform density profile structure |
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1994
- 1994-02-08 CN CN94101756A patent/CN1048578C/en not_active Expired - Fee Related
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| CN104465295A (en) * | 2014-10-27 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Novel micro-channel plate electrode with ion blocking function and manufacturing method thereof |
| CN104465295B (en) * | 2014-10-27 | 2018-02-27 | 中国电子科技集团公司第五十五研究所 | A kind of AT-MCP electrode with ion barrier functionality and preparation method thereof |
| CN110678956A (en) * | 2017-06-30 | 2020-01-10 | 浜松光子学株式会社 | Electron multiplier |
| CN110678956B (en) * | 2017-06-30 | 2022-03-01 | 浜松光子学株式会社 | Electron multiplier |
| CN108445024A (en) * | 2018-05-17 | 2018-08-24 | 南京航空航天大学 | A kind of imaging method of high-speed object X-ray Real Time Image System and system |
| CN109300765A (en) * | 2018-09-29 | 2019-02-01 | 北方夜视技术股份有限公司 | A method of it reducing microchannel plate and exports ion flicker noise |
| CN109300765B (en) * | 2018-09-29 | 2021-02-09 | 北方夜视技术股份有限公司 | Method for reducing ion flicker noise output by microchannel plate |
| CN114097057A (en) * | 2019-06-26 | 2022-02-25 | 浜松光子学株式会社 | Electron tube and image pickup apparatus |
| CN111584331A (en) * | 2020-05-27 | 2020-08-25 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
| CN111584331B (en) * | 2020-05-27 | 2022-07-26 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
| CN112420476A (en) * | 2020-10-30 | 2021-02-26 | 北方夜视技术股份有限公司 | Microchannel plate for near-contact photoelectric detector and preparation method thereof |
| CN112420476B (en) * | 2020-10-30 | 2022-04-22 | 北方夜视技术股份有限公司 | Microchannel plate for near-contact photoelectric detector and preparation method thereof |
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