CN109346611B - 一种光探测器原型器件的制备方法 - Google Patents

一种光探测器原型器件的制备方法 Download PDF

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CN109346611B
CN109346611B CN201811124266.1A CN201811124266A CN109346611B CN 109346611 B CN109346611 B CN 109346611B CN 201811124266 A CN201811124266 A CN 201811124266A CN 109346611 B CN109346611 B CN 109346611B
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吕燕飞
徐竹华
赵士超
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Hangzhou Dianzi University
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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Abstract

本发明公开了一种光探测器原型器件的制备方法，本发明在铜薄膜基底上生长石墨烯，通过热氧化在铜基底与石墨烯两者夹层中间生长氧化亚铜纳米厚度的二维薄膜，之后再石墨烯上表面制备空穴注入层聚(3,4‑乙烯二氧噻吩)‑聚苯乙烯磺酸(PEDOT:PSS)薄膜，再在PEDOT:PSS薄膜上表面制备空穴传输层聚乙烯基咔唑(PVK)，最后在PVK薄膜表面制备金属电极完成器件的制备。本发明具有厚度薄、光响应快、柔性好的优点。

Description

一种光探测器原型器件的制备方法
技术领域
本发明属于器件制备领域，具体涉及一种氧化亚铜作为光电转换层的可见光光电探测器。
背景技术
光电探测器件是能将入射光信号转变成电信号的器件。可探测不同波长的光辐射，用于成像、工业自动化控制、移动物体的跟踪和控制等领域。
氧化亚铜是无机金属氧化物P型直接带隙半导体材料，在可见光照射下能够产生光电导现象，氧化亚铜光响应好，可以用于可见光光电探测器材料。近年来随着柔性电子技术的发展，柔性光电探测器件的制备也引起关注。
发明内容
本发明针对现有技术的不足，提出了一种光探测器原型器件的制备方法。
本发明将氧化亚铜纳米薄膜材料与有机材料结合，制备具有一定柔性的光电探测器。本发明在铜薄膜基底上生长石墨烯，通过热氧化在铜基底与石墨烯两者夹层中间生长氧化亚铜纳米厚度的二维薄膜，之后再石墨烯上表面制备空穴注入层聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)薄膜，再在PEDOT:PSS薄膜上表面制备空穴传输层聚乙烯基咔唑(PVK)，最后在PVK薄膜表面制备金属电极完成器件的制备。
本发明一种光探测器原型器件的制备方法的具体步骤是：
步骤(1).通过化学气相沉积法(CVD)在铜(Cu)薄膜表面生长单原子层厚度的石墨烯薄膜。取边长为1厘米厚125微米的正方形铜薄膜，放入CVD***中的石英管中，向石英管中通入氢气，氢气流速(20sccm)；石英管从室温加热至1000℃，升温速率20℃/min；向石英管中通入甲烷，甲烷流速(100sccm)；在1000℃保温40min后，石英管快速降温至600℃，降温速率200℃/min，600℃后石英管自然降至室温，停止通入甲烷气体、氢气气体。获得生长在金属铜表面的单原子层厚的石墨烯(Gr)。产物结构为Cu/Gr.
步骤(2).步骤(1)的产物放入180℃的烘箱中，烘箱中的湿度通过加湿器控制在80％。放置12小时后取出。产物结构为中间夹有氧化亚铜(Cu2O)的三明治结构，Cu/Cu2O/Gr.
步骤(3).在石墨烯表面通过旋涂法涂覆一层聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)薄膜。PEDOT:PSS水溶液采用市售产品。旋涂转速为3000转/分钟。PEDOT:PSS薄膜厚度为20nm。形成Cu/Cu2O/Gr/PEDOT:PSS叠层结构。
步骤(4).在PEDOT:PSS薄膜表面继续通过旋涂法涂覆一层聚乙烯基咔唑(PVK)薄膜。将PVK溶解于氯仿溶液中，浓度为0.02g/ml。旋涂转速为4000转/分钟。PVK薄膜厚度为20nm。形成Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构。
步骤(5).在Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构的PVK上表面通过热蒸发法沉积金属金电极。
本发明制备的光探测器，将无机纳米薄膜与有机材料结合，具有厚度薄、光响应快、柔性好的优点。
附图说明
图1为本发明的结构示意图。
具体实施方式
如图1所示，本发明一种光探测器原型器件的制备方法的具体步骤是：
步骤(1).通过化学气相沉积法(CVD)在铜(Cu)6薄膜表面生长单原子层厚度的石墨烯薄膜4。取边长为1厘米厚125微米的正方形铜薄膜，放入CVD***中的石英管中，向石英管中通入氢气，氢气流速(20sccm)；石英管从室温加热至1000℃，升温速率20℃/min；向石英管中通入甲烷，甲烷流速(100sccm)；在1000℃保温40min后，石英管快速降温至600℃，降温速率200℃/min，600℃后石英管自然降至室温，停止通入甲烷气体、氢气气体。获得生长在金属铜表面的单原子层厚的石墨烯(Gr)。产物结构为Cu/Gr.
步骤(2).步骤(1)的产物放入180℃的烘箱中，烘箱中的湿度通过加湿器控制在80％。放置12小时后取出。产物结构为中间夹有氧化亚铜(Cu2O)5的三明治结构，Cu/Cu2O/Gr.
步骤(3).在石墨烯表面通过旋涂法涂覆一层聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)薄膜3。PEDOT:PSS水溶液采用市售产品。旋涂转速为3000转/分钟。PEDOT:PSS薄膜厚度为20nm。形成Cu/Cu2O/Gr/PEDOT:PSS叠层结构。
步骤(4).在PEDOT:PSS薄膜表面继续通过旋涂法涂覆一层聚乙烯基咔唑(PVK)薄膜2。将PVK溶解于氯仿溶液中，浓度为0.02g/ml。旋涂转速为4000转/分钟。PVK薄膜厚度为20nm。形成Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构。
步骤(5).在Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构的PVK上表面通过热蒸发法沉积金属金电极1。

Claims (2)

1.一种光探测器原型器件的制备方法，其特征在于，该方法具体包括以下步骤：
步骤(1)、通过化学气相沉积法在铜薄膜表面生长单原子层厚度的石墨烯薄膜；
步骤(2)、步骤(1)的产物放入180℃的烘箱中，烘箱中的湿度通过加湿器控制在湿度为80％；放置12小时后取出；产物结构为中间夹有氧化亚铜的三明治结构，Cu/Cu2O/Gr；
步骤(3)、在石墨烯表面通过旋涂法涂覆一层聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸薄膜，旋涂转速为3000转/分钟；PEDOT:PSS薄膜厚度为20nm；形成Cu/Cu2O/Gr/PEDOT:PSS叠层结构；其中聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸薄膜即PEDOT:PSS薄膜；
步骤(4)、在PEDOT:PSS薄膜表面继续通过旋涂法涂覆一层聚乙烯基咔唑薄膜；其中聚乙烯基咔唑薄膜为将聚乙烯基咔唑溶解于氯仿溶液中，浓度为0.02g/ml；旋涂转速为4000转/分钟；聚乙烯基咔唑薄膜厚度为20nm；形成Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构；其中PVK即聚乙烯基咔唑；
步骤(5)、在Cu/Cu2O/Gr/PEDOT:PSS/PVK叠层结构的PVK上表面通过热蒸发法沉积金属金电极。
2.根据权利要求1所述的一种光探测器原型器件的制备方法，其特征在于：步骤(1)具体为取正方形铜薄膜，放入CVD***中的石英管中，向石英管中通入氢气，氢气流速为20sccm；石英管从室温加热至1000℃，升温速率20℃/min；向石英管中通入甲烷，甲烷流速100sccm；在1000℃保温40min后，石英管快速降温至600℃，降温速率200℃/min，600℃后石英管自然降至室温，停止通入甲烷气体、氢气气体；获得生长在金属铜表面的单原子层厚的石墨烯(Gr)；产物结构为Cu/Gr。
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