CN109346542A - 一种光伏双玻组件结构 - Google Patents

一种光伏双玻组件结构 Download PDF

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CN109346542A
CN109346542A CN201710645550.2A CN201710645550A CN109346542A CN 109346542 A CN109346542 A CN 109346542A CN 201710645550 A CN201710645550 A CN 201710645550A CN 109346542 A CN109346542 A CN 109346542A
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glass
assembly structure
photovoltaic double
structure according
glass assembly
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郑友伟
耿越
毛丽
林俊良
林金汉
林金锡
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CHANGZHOU ALMADEN STOCK Co Ltd
Changzhou Almaden Co Ltd
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CHANGZHOU ALMADEN STOCK Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0488Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

本发明提供一种光伏双玻组件结构,包括由下至上依次设置的背玻、下封装胶膜、电池串、上封装胶膜和前玻,背玻为超白压花玻璃,超白压花玻璃的二表面分别为压花面和绒面,压花面或绒面上设有高反射膜层。本发明相较于现有技术,反射光为多角度反射,增加反射到电池片吸光面的光,提高光的利用率,使电池片能更多的利用背玻反射光来使组件功率增加;同时组件背玻表面积增加,增加组件散热效果,增加户外发电量,且老化性能好。

Description

一种光伏双玻组件结构
技术领域
本发明属于太阳能电池技术领域,具体涉及一种光伏双玻组件结构。
背景技术
随着新能源技术的不断推广应用,太阳能电池作为环保新能源,发展前景很好。目前,双玻组件采用普通浮法玻璃具有散射低、光利用较少的缺点,大大降低发电效率。
发明内容
为解决现有技术存在的光利用较少的缺陷,本发明提供一种光伏双玻组件结构。
为了达到上述目的,本发明的技术方案如下:
本发明提供一种光伏双玻组件结构,包括由下至上依次设置的背玻、下封装胶膜、电池串、上封装胶膜和前玻,背玻为超白压花玻璃,超白压花玻璃的二表面分别为压花面和绒面,压花面或绒面上设有高反射膜层。
优选的,高反射膜层的厚度为5-200μm,背玻的厚度为小于4mm。
优选的,高反射膜层为BaSO4、BaCO3、TiO2、ZnO、CaCO3、 ZrO2中的一种或多种材料组合而成。
优选的,高反射膜层的太阳光谱平均反射率大于80%。
优选的,压花面的图形为四边形或六边形,压花面的横向长为 500-1500μm,深度为30-100μm,长度和深度比为5-50;压花面的纵向长为500-1500μm,深度为30-100μm,长度和深度比为5-50。
优选的,绒面的粗糙度为0.6-3μm。
优选的,前玻为压花钢化玻璃或浮法钢化玻璃,前玻上设有减反膜。
优选的,电池串的电池片为单晶/多晶/双面/薄膜电池。
优选的,上封装胶膜和下封装胶膜为POE/EVA/PVB/有机硅胶。
优选的,电池串的任意相邻二个电池片之间的距离为0.5-10mm。
有益效果:本发明相较于现有技术,反射光为多角度反射,增加反射到电池片吸光面的光,提高光的利用率,使电池片能更多的利用背玻反射光来使组件功率增加;同时组件背玻表面积增加,增加组件散热效果,增加户外发电量,且老化性能好。
附图说明
图1是本发明一种实施方式的结构示意图。
图2是本发明不同背玻高反功率对比结果示意图。
具体实施方式
下面结合附图详细说明本发明的优选实施方式。
为了达到本发明的目的,如图1所示,在本发明的其中一种实施方式中提供一种光伏双玻组件结构,包括由下至上依次设置的背玻1、下封装胶膜3、电池串4、上封装胶膜5和前玻6,背玻1为超白压花玻璃,超白压花玻璃的二表面分别为压花面和绒面,压花面上设有高反射膜层2。
其中,高反射膜层的厚度为5-200μm,可选5μm、100μm或200μm,背玻的厚度为小于4mm,可选0.5mm、1mm、2mm或4mm。高反射膜层为BaSO4、BaCO3、TiO2、ZnO、CaCO3、ZrO2中的一种或多种材料组合而成。高反射膜层的太阳光谱平均反射率大于80%。
实施例1
保证组件除背玻外,其他材料不变制作组件,对比功率差异。
前玻:压花减反镀膜钢化玻璃;
组件尺寸:1652*986;
电池片:单晶电池片,156mm*156mm;
封装胶膜:POE,0.57mm;
排串:电池片间距2mm,电池串间距3mm;
背玻:对比组件分组:
1)背玻为浮法高反玻璃组件(厚度2mm,粗糙度Ra值为0.01um);
2)背玻为压花绒面高反玻璃组件(厚度2mm,绒面粗糙度Ra值为0.78um);
3)背玻为压花花纹面高反玻璃组件(厚度2mm,绒面粗糙度Ra 值为0.78um,压花深度为43um,横向长与深度比为18.2,纵向长与深度比为33.5。
对上述三种不同背玻高反功率进行检测,结果见图2。
图2为不同背玻高反功率对比结果。
数据表明,背玻使用压花镀高反射材料玻璃,功率明显高于浮法镀高反射材料玻璃。
实施例2
保证组件除背玻外,其他材料不变制作组件,户外安装方式一致,对比累积一个月发电量差异。
前玻:压花减反镀膜钢化玻璃;
组件尺寸:1652*986;
电池片:单晶电池片,156mm*156mm;
封装胶膜:POE,0.57mm;
排串:电池片间距2mm,电池串间距3mm;
背玻:对比组件分组:
1)背玻为浮法高反玻璃组件(厚度2mm,粗糙度Ra值为0.01um)
2)背玻为压花面镀高反玻璃组件(厚度2mm,绒面粗糙度Ra 值为0.78um,压花深度为43um,横向长与深度比为18.2,纵向长与深度比为33.5)。
对上述两种不同背玻作发电量检测,其结果见表1。
表1为不同背玻的发电量检测结果。
数据表明,组件背玻为压花网印白漆的户外发电量高于后浮法网印白漆组件,且背玻为压花玻璃,组件户外散热性能好,温度较背玻是浮法玻璃低。
以上所述的仅是本发明的优选实施方式,应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。

Claims (10)

1.一种光伏双玻组件结构,其特征在于,包括由下至上依次设置的背玻、下封装胶膜、电池串、上封装胶膜和前玻,背玻为超白压花玻璃,超白压花玻璃的二表面分别为压花面和绒面,压花面或绒面上设有高反射膜层。
2.根据权利要求1所述的光伏双玻组件结构,其特征在于,高反射膜层的厚度为5-200μm,背玻的厚度为小于4mm。
3.根据权利要求1所述的光伏双玻组件结构,其特征在于,高反射膜层为BaSO4、BaCO3、TiO2、ZnO、CaCO3、ZrO2中的一种或多种材料组合而成。
4.根据权利要求1所述的光伏双玻组件结构,其特征在于,高反射膜层的太阳光谱平均反射率大于80%。
5.根据权利要求1所述的光伏双玻组件结构,其特征在于,压花面的图形为四边形或六边形,压花面的横向长为500-1500μm,深度为30-100μm,长度和深度比为5-50;压花面的纵向长为500-1500μm,深度为30-100μm,长度和深度比为5-50。
6.根据权利要求1所述的光伏双玻组件结构,其特征在于,绒面的粗糙度为0.6-3μm。
7.根据权利要求1所述的光伏双玻组件结构,其特征在于,前玻为压花钢化玻璃或浮法钢化玻璃,前玻上设有减反膜。
8.根据权利要求1所述的光伏双玻组件结构,其特征在于,电池串的电池片为单晶/多晶/双面/薄膜电池。
9.根据权利要求1所述的光伏双玻组件结构,其特征在于,上封装胶膜和下封装胶膜为POE/EVA/PVB/有机硅胶。
10.根据权利要求1所述的光伏双玻组件结构,其特征在于,电池串的任意相邻二个电池片之间的距离为0.5-10mm。
CN201710645550.2A 2017-08-01 2017-08-01 一种光伏双玻组件结构 Pending CN109346542A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111554766A (zh) * 2020-06-16 2020-08-18 苏州腾晖光伏技术有限公司 一种光伏组件及其制作方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110451A (zh) * 2007-06-27 2008-01-23 常州市亚玛顿科技有限公司 太阳能电池组件封装用玻璃板
CN202434531U (zh) * 2012-01-19 2012-09-12 蚌埠玻璃工业设计研究院 一种用于晶体硅太阳能电池组件封装的超白压花玻璃
CN103258887A (zh) * 2013-04-28 2013-08-21 王博 一种超白压花玻璃
CN203746873U (zh) * 2013-12-27 2014-07-30 比亚迪股份有限公司 光伏电池组件
CN205159342U (zh) * 2015-12-04 2016-04-13 合肥晶晨光伏能源有限公司 一种太阳能双玻组件
CN106685323A (zh) * 2017-02-06 2017-05-17 江苏友科太阳能科技有限公司 轻量化双玻结构双面发电光伏瓦

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110451A (zh) * 2007-06-27 2008-01-23 常州市亚玛顿科技有限公司 太阳能电池组件封装用玻璃板
CN202434531U (zh) * 2012-01-19 2012-09-12 蚌埠玻璃工业设计研究院 一种用于晶体硅太阳能电池组件封装的超白压花玻璃
CN103258887A (zh) * 2013-04-28 2013-08-21 王博 一种超白压花玻璃
CN203746873U (zh) * 2013-12-27 2014-07-30 比亚迪股份有限公司 光伏电池组件
CN205159342U (zh) * 2015-12-04 2016-04-13 合肥晶晨光伏能源有限公司 一种太阳能双玻组件
CN106685323A (zh) * 2017-02-06 2017-05-17 江苏友科太阳能科技有限公司 轻量化双玻结构双面发电光伏瓦

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111554766A (zh) * 2020-06-16 2020-08-18 苏州腾晖光伏技术有限公司 一种光伏组件及其制作方法

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