CN109338156A - 磁性镀层铜键合丝的制备方法 - Google Patents
磁性镀层铜键合丝的制备方法 Download PDFInfo
- Publication number
- CN109338156A CN109338156A CN201810985847.8A CN201810985847A CN109338156A CN 109338156 A CN109338156 A CN 109338156A CN 201810985847 A CN201810985847 A CN 201810985847A CN 109338156 A CN109338156 A CN 109338156A
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- CN
- China
- Prior art keywords
- palladium
- plating
- bonding wire
- iron
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 43
- 239000010949 copper Substances 0.000 title claims abstract description 43
- 239000011248 coating agent Substances 0.000 title claims abstract description 16
- 238000000576 coating method Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 107
- 238000007747 plating Methods 0.000 claims abstract description 60
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 54
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 238000000137 annealing Methods 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229960000935 dehydrated alcohol Drugs 0.000 claims abstract description 19
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000002485 combustion reaction Methods 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 230000002829 reductive effect Effects 0.000 claims abstract description 7
- 239000005751 Copper oxide Substances 0.000 claims abstract description 6
- 239000002360 explosive Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 238000005491 wire drawing Methods 0.000 claims abstract description 6
- 230000005389 magnetism Effects 0.000 claims abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 88
- 229910052742 iron Inorganic materials 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 238000009749 continuous casting Methods 0.000 claims description 13
- 238000005266 casting Methods 0.000 claims description 12
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 10
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 5
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 5
- 238000007670 refining Methods 0.000 claims description 5
- 239000004615 ingredient Substances 0.000 claims description 3
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 230000003064 anti-oxidating effect Effects 0.000 abstract description 2
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- 229910001868 water Inorganic materials 0.000 description 8
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/10—Alloys based on copper with silicon as the next major constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
- B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
- B21C37/042—Manufacture of coated wire or bars
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
- B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
- B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C9/05—Alloys based on copper with manganese as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/20—Electroplating: Baths therefor from solutions of iron
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract
一种磁性镀层铜键合丝的制备方法,包括以下步骤:(1)熔铸和拉丝;(2)电镀磁性镀层;(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液的钯离子浓度为5‑20克每升,镀钯条件为镀钯液的pH值控制在9.5‑10.3,镀钯液的温度控制在40‑60摄氏度;(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH‑CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护;退火温度为250~500℃;(5)清洗:利用无水乙醇在高温蒸发时***力打掉丝上的脏物;(6)对清洗后的键合丝进行复绕。本发明生成的铜键合丝性能良好稳定,具有防氧化和抗电磁干扰的优点。
Description
技术领域
本发明涉及半导体新材料领域,具体涉及键合丝领域,尤其涉及一种具有磁性镀层铜键合丝及其制备方法。
背景技术
近几年随着金价不断攀升,封装领域的成本越来越高,目前镀钯铜键合丝代替金丝已经日趋成熟。
现有技术中多数研究的热点在于铜键合丝的具体成分组成和镀钯防氧化的方法。例如中国专利文献(CN103560120A)公开了一种含有微量的磷和锰的键合丝,并具体采用了化学镀的方式镀钯;中国专利文献(CN102660695A)公开了一种具有屏蔽铜网的键合丝,防止交叉放电的风险。但是键合丝间的电磁干扰还是存在,如何减少键合丝间的电磁干扰也是半导体封装所需要克服的问题。
发明内容
本发明的目的就是针对现有技术存在的问题,提供一种具有磁性镀层铜键合丝,所述铜键合丝的元素质量百分比为:铜的质量百分比大于99.95%,硅的质量百分比为0.003%-0.05%,银的质量百分比为0.001%-0.005%,锰的质量百分比为0.005%-0.01%,余量为不可避免的杂质,所述铜键合丝的外层依次包裹有磁性镀层和化学镀钯层。
其中,所述磁性镀层为铁层和铁钴合金层的双层结构。
其中,所述铁层的厚度为50-500μm,所述铁钴合金层的厚度为200-800μm。
其中,所述铁钴合金层,铁的质量百分比为50%-80%,钴的质量百分比为20%-50%。
本发明还提供了一种制备上述具有磁性镀层铜键合丝的方法,所述方法包括以下步骤:
(1)熔铸和拉丝:在熔铸过程中加入0.003%-0.05%的硅、0.001%-0.005%的银和0.005%-0.01%的锰,加热方式采用中频加热,连铸方式采用下引式真空连铸,并控制熔铸和拉丝条件为:熔铸温度为1100-1300℃,真空度1.0*10-5Mpa,精炼时间20-40分钟,连铸速度150-300mm/分钟,形成的铜坯直径为3-8mm,拉丝速度为50-100m/min;
(2)电镀磁性镀层:将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层,其中铁的电镀液的铁离子浓度为20-50克每升,铁层厚度为50-500μm;然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层,其中铁钴的电镀液的铁离子浓度为20-50克每升,钴离子的浓度为10-20克每升,铁钴合金层厚度为200-800μm;
(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液的钯离子浓度为5-20克每升,镀钯条件为镀钯液的pH值控制在9.5-10.3,镀钯液的温度控制在40-60摄氏度;
(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护;退火温度为250~500℃;
(5)清洗:利用无水乙醇在高温蒸发时***力打掉丝上的脏物;
(6)对清洗后的键合丝进行复绕。
本发明的有益效果:本发明将硅、银、锰的微量元素加入铜键合丝,可以提高熔体的流动性,改善铜及合金的焊接性能、耐蚀性能,提高铜的强度和耐蚀性能。本发明还利用铁层和铁钴合金层来防止电磁干扰,铁钴合金层还可以防止内部铜键合丝的氧化。
具体实施方式
本发明的具有磁性镀层铜键合丝,所述铜键合丝的元素质量百分比为:铜的质量百分比大于99.95%,硅的质量百分比为0.003%-0.05%,银的质量百分比为0.001%-0.005%,锰的质量百分比为0.005%-0.01%,余量为不可避免的杂质,所述铜键合丝的外层依次包裹有磁性镀层和化学镀钯层。
本发明的制备方法包括以下步骤:
(1)熔铸和拉丝:在熔铸过程中加入0.003%-0.05%的硅、0.001%-0.005%的银和0.005%-0.01%的锰,加热方式采用中频加热,连铸方式采用下引式真空连铸,并控制熔铸和拉丝条件为:熔铸温度为1100-1300℃,真空度1.0*10-5Mpa,精炼时间20-40分钟,连铸速度150-300mm/分钟,形成的铜坯直径为3-8mm,拉丝速度为50-100m/min;
(2)电镀磁性镀层:将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层,其中铁的电镀液的铁离子浓度为20-50克每升,铁层厚度为50-500μm;然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层,其中铁钴的电镀液的铁离子浓度为20-50克每升,钴离子的浓度为10-20克每升,铁钴合金层厚度为200-800μm;
(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液的钯离子浓度为5-20克每升,镀钯条件为镀钯液的pH值控制在9.5-10.3,镀钯液的温度控制在40-60摄氏度;
(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护;退火温度为250~500℃;
(5)清洗:利用无水乙醇在高温蒸发时***力打掉丝上的脏物;
(6)对清洗后的键合丝进行复绕。
实施例1
(1)熔铸和拉丝:在熔铸过程中加入0.003%的硅、0.001%的银和0.005%的锰,加热方式采用中频加热,连铸方式采用下引式真空连铸,并控制熔铸和拉丝条件为:熔铸温度为1200℃,真空度1.0*10-5Mpa,精炼时间40分钟,连铸速度200mm/分钟,形成的铜坯直径为5mm,拉丝速度为80m/min;
(2)电镀磁性镀层:将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层,其中铁的电镀液的铁离子浓度为50克每升,铁层厚度为500μm;然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层,其中铁钴的电镀液的铁离子浓度为50克每升,钴离子的浓度为20克每升,铁钴合金层厚度为500μm;
(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液的,镀钯液成分为6g/LPdCl、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl,镀钯液的pH值控制在9.5附近,镀钯液的温度控制在40摄氏度;化学还原钯法中使用的包钯液为弱碱性,使用后为中性,较为环保。成品化学镀钯法的镀后钯层均匀,并且钯层厚度可控。另外传统工艺是在半成品时镀钯,这样丝材***,在后道加工时模具消耗量极大,本专利的化学镀钯方法可以最大程度的减小模具用量,节省资源。
(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护,比氢气还原安全;退火温度为250℃;
(5)清洗:利用无水乙醇,在高温蒸发时***力打掉丝上的脏物;利用无水乙醇在高温蒸发时爆力打掉丝上的脏东西,代替去离子水清洗的步骤,可以节省用水量,节约用水。
(6)对清洗后的键合丝进行复绕。化学镀钯、退火、清洗和复绕一体完成,镀钯退火复绕速度为50米每分钟。
实施例2
(1)熔铸和拉丝:在熔铸过程中加入0.05%的硅、0.05%的银和0.001%的锰,加热方式采用中频加热,连铸方式采用下引式真空连铸,并控制熔铸和拉丝条件为:熔铸温度为1300℃,真空度1.0*10-5Mpa,精炼时间30分钟,连铸速度300mm/分钟,形成的铜坯直径为8mm,拉丝速度为50m/min;
(2)电镀磁性镀层:将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层,其中铁的电镀液的铁离子浓度为20克每升,铁层厚度为200μm;然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层,其中铁钴的电镀液的铁离子浓度为50克每升,钴离子的浓度为10克每升,铁钴合金层厚度为300μm;
(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液成分为6.67g/LPdCl(对应钯离子浓度为5克每升)、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl,镀钯液的pH值控制在9.5附近,镀钯液的温度控制在40摄氏度;化学还原钯法中使用的包钯液为弱碱性,使用后为中性,较为环保。成品化学镀钯法的镀后钯层均匀,并且钯层厚度可控。另外传统工艺是在半成品时镀钯,这样丝材***,在后道加工时模具消耗量极大,本专利的化学镀钯方法可以最大程度的减小模具用量,节省资源。
(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护,比氢气还原安全;退火温度为500℃;
(5)清洗:利用无水乙醇在高温蒸发时***力打掉丝上的脏物;利用无水乙醇在高温蒸发时爆力打掉丝上的脏东西,代替去离子水清洗的步骤,可以节省用水量,节约用水。
(6)对清洗后的键合丝进行复绕。化学镀钯、退火、清洗和复绕一体完成,镀钯退火复绕速度为50米每分钟。
Claims (1)
1.一种磁性镀层铜键合丝的制备方法,其特征在于,包括以下步骤:
(1)熔铸和拉丝:在熔铸过程中加入0.003%-0.05%的硅、0.001%-0.005%的银和0.005%-0.01%的锰,加热方式采用中频加热,连铸方式采用下引式真空连铸,并控制熔铸和拉丝条件为:熔铸温度为1100-1300℃,真空度1.0*10-5Mpa,精炼时间20-40分钟,连铸速度150-300mm/分钟,形成的铜坯直径为3-8mm,拉丝速度为50-100m/min;
(2)电镀磁性镀层:将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层,其中铁的电镀液的铁离子浓度为20-50克每升,铁层厚度为50-500μm;然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层,其中铁钴的电镀液的铁离子浓度为20-50克每升,钴离子的浓度为10-20克每升,铁钴合金层厚度为200-800μm;
镀钯液成分为6g/LPdCl、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl;
(3)化学镀钯:将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯,镀钯液的钯离子浓度为5-20克每升,镀钯条件为镀钯液的pH值控制在9.5-10.3,镀钯液的温度控制在40-60摄氏度;
(4)退火:利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O),用氮气加无水乙醇代替氮氢混合气进行退火保护;退火温度为250~500℃;
(5)清洗:利用无水乙醇在高温蒸发时***力打掉丝上的脏物;
(6)对清洗后的键合丝进行复绕;
化学镀钯、退火、清洗和复绕一体完成,镀钯退火复绕速度为50米每分钟。
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CN110665990A (zh) * | 2019-09-30 | 2020-01-10 | 江西振鹰智能科技有限公司 | 一种铜合金线材及其制备方法和包含该线材的电缆 |
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CN105097748A (zh) * | 2014-04-23 | 2015-11-25 | 北京富纳特创新科技有限公司 | 键合线以及半导体封装件 |
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CN110665990A (zh) * | 2019-09-30 | 2020-01-10 | 江西振鹰智能科技有限公司 | 一种铜合金线材及其制备方法和包含该线材的电缆 |
CN114005807A (zh) * | 2021-10-09 | 2022-02-01 | 江西蓝微电子科技有限公司 | 一种镀金钯铜基键合丝及其制备方法 |
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