CN109320911A - A kind of high tenacity insulating circuit board substrate and preparation method thereof - Google Patents
A kind of high tenacity insulating circuit board substrate and preparation method thereof Download PDFInfo
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- CN109320911A CN109320911A CN201811082528.2A CN201811082528A CN109320911A CN 109320911 A CN109320911 A CN 109320911A CN 201811082528 A CN201811082528 A CN 201811082528A CN 109320911 A CN109320911 A CN 109320911A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2217—Oxides; Hydroxides of metals of magnesium
- C08K2003/2224—Magnesium hydroxide
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2244—Oxides; Hydroxides of metals of zirconium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/004—Additives being defined by their length
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Abstract
The present invention relates to electronic technology fields, disclose a kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: main includes below according to the raw material of parts by weight: 50-70 parts of epoxy resin, 30-50 parts of phenolic resin, 10-20 parts of zirconium oxide, 8-15 parts of cobalt oxide, 5-10 parts of silicon carbide, 5-10 parts of titanium dioxide, 5-8 parts of silicon nitride crystal whisker, 10-20 parts of polyethylene glycol, 5-10 parts of nonylphenol polyoxyethylene ether, 2-4 parts of n,N-Dimethylformamide.The invention also discloses the preparation methods of the high tenacity insulating circuit board substrate.Circuit board substrate insulation performance prepared by the present invention, even if will not can carry out effective protection there is a phenomenon where puncturing under high-tension electricity effect to circuit, improve the security performance and service life of product.
Description
Technical field
The present invention relates to electronic technology field, specifically a kind of high tenacity insulating circuit board substrate and preparation method thereof.
Background technique
Circuit board substrate is the basic material for manufacturing circuit board, and under normal circumstances, substrate is exactly copper-clad laminate, single,
Double-clad board is selectively to carry out hole machined, electroless copper, electricity on baseplate material-copper-clad laminate during manufacturing
The processing such as copper facing, etching, obtains required circuitous pattern, performance, quality, the processability in manufacture, the manufacturing cost, system of printed board
Level etc. is made, baseplate material is depended greatly on.
Circuit board substrate generally all has insulating properties, but the insulation performance of ordinary circuit board substrate is general, is only applicable to small
Power electronic product, once voltage loads are excessive, it is possible to and cause circuit board breakdown, there is the risk of short circuit, be easy to make
At circuit burnout, security performance and service life it is relatively low.
Summary of the invention
The purpose of the present invention is to provide a kind of high tenacity insulating circuit board substrates, to solve to propose in above-mentioned background technique
The problem of.
To achieve the above object, the invention provides the following technical scheme:
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 50-70 parts of epoxy resin, phenol
30-50 parts of urea formaldehyde, 10-20 parts of zirconium oxide, 8-15 parts of cobalt oxide, 5-10 parts of silicon carbide, 5-10 parts of titanium dioxide, silicon nitride crystal whisker
5-8 parts, 10-20 parts of polyethylene glycol, 5-10 parts of nonylphenol polyoxyethylene ether, 2-4 parts of n,N-Dimethylformamide, Arabic gum 6-
12 parts, 1-2 parts of antioxidant, 1-2 parts of fire retardant, 1-2 parts of plasticizer, 3-6 parts of copper foil.
As a further solution of the present invention: including below according to the raw material of parts by weight: 55-65 parts of epoxy resin, phenolic aldehyde
35-45 parts of resin, 12-18 parts of zirconium oxide, 9-13 parts of cobalt oxide, 6-9 parts of silicon carbide, 6-8 parts of titanium dioxide, silicon nitride crystal whisker 6-7
Part, 12-18 parts of polyethylene glycol, 6-9 parts of nonylphenol polyoxyethylene ether, 2.5-3.5 parts of n,N-Dimethylformamide, Arabic gum 7-
11 parts, 1.2-1.8 parts of antioxidant, 1.2-1.8 parts of fire retardant, 1.2-1.8 parts of plasticizer, 4-5 parts of copper foil.
As further scheme of the invention: including below according to the raw material of parts by weight: 60 parts of epoxy resin, phenolic aldehyde tree
40 parts of rouge, 15 parts of zirconium oxide, 11 parts of cobalt oxide, 8 parts of silicon carbide, 7 parts of titanium dioxide, 6.5 parts of silicon nitride crystal whisker, polyethylene glycol 15
Part, 7 parts of nonylphenol polyoxyethylene ether, 3 parts of n,N-Dimethylformamide, 9 parts of Arabic gum, 1.4 parts of antioxidant, fire retardant 1.6
Part, 1.5 parts of plasticizer, 4.5 parts of copper foil.
As further scheme of the invention: the silicon nitride crystal whisker diameter is 1-3 μm, length 2-4mm.
As further scheme of the invention: the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2
It forms.
The preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 10-15min with 500-800r/min, obtain glue under the conditions of 100-120 DEG C of temperature
Liquid；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 120-150 DEG C of temperature
Under the conditions of, 20-30min is stirred with 300-500r/min, it is cooling, obtain mixture；
3) 200-300 mesh is smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire-retardant is added
Agent, plasticizer are aided with the ultrasonic wave of 30-50KHz, after the completion with the microwave heating 10-15min of 800-1000W in heating process
It is sent into mold, carries out cold moudling at room temperature, obtain prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 15-20MPa, temperature
It is 150-200 DEG C, heat-insulation pressure keeping 1-2h is cooling, discharging.
Application of the foregoing circuit plate substrate in electronic equipment production field.
Compared with prior art, the beneficial effects of the present invention are:
Circuit board substrate prepared by the present invention can be born and biggish external force under the common mating reaction of various raw materials
Effect, bending strength is high, not easy to break, and circuit board substrate has good insulation performance, even if under high-tension electricity effect,
Effective protection will not can be carried out to circuit there is a phenomenon where puncturing, improve the security performance and service life of product.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described,
Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts, all
Belong to the scope of protection of the invention.
Embodiment 1
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 50 parts of epoxy resin, phenolic aldehyde tree
30 parts of rouge, 10 parts of zirconium oxide, 8 parts of cobalt oxide, 5 parts of silicon carbide, 5 parts of titanium dioxide, 5 parts of silicon nitride crystal whisker, 10 parts of polyethylene glycol, nonyl
5 parts of base phenol polyethenoxy ether, 2 parts of n,N-Dimethylformamide, 6 parts of Arabic gum, 1 part of antioxidant, 1 part of fire retardant, plasticizer 1
Part, 3 parts of copper foil.
Wherein, the silicon nitride crystal whisker diameter is 1 μm, length 2mm.
Wherein, the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2.
In the present embodiment, the preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 10min with 500r/min, obtain glue under the conditions of 100 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 120 DEG C of temperature conditions
Under, 20min is stirred with 300r/min, it is cooling, obtain mixture；
3) 200 meshes are smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
It moulds agent the ultrasonic wave of 30KHz is aided with the microwave heating 10min of 800W in heating process, be sent into mold after the completion, in room
Temperature is lower to carry out cold moudling, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 15MPa, temperature is
It is 150 DEG C, heat-insulation pressure keeping 1h, cooling, discharging.
Embodiment 2
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 55 parts of epoxy resin, phenolic aldehyde tree
35 parts of rouge, 12 parts of zirconium oxide, 9 parts of cobalt oxide, 6 parts of silicon carbide, 6 parts of titanium dioxide, 6 parts of silicon nitride crystal whisker, 12 parts of polyethylene glycol, nonyl
9 parts of base phenol polyethenoxy ether, 3.5 parts of n,N-Dimethylformamide, 11 parts of Arabic gum, 1.8 parts of antioxidant, 1.8 parts of fire retardant,
1.8 parts of plasticizer, 5 parts of copper foil.
Wherein, the silicon nitride crystal whisker diameter is 2 μm, length 3mm.
Wherein, the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2.
In the present embodiment, the preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 12min with 650r/min, obtain glue under the conditions of 110 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 135 DEG C of temperature conditions
Under, 25min is stirred with 40r/min, it is cooling, obtain mixture；
3) 250 meshes are smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
It moulds agent the ultrasonic wave of 40KHz is aided with the microwave heating 12min of 900W in heating process, be sent into mold after the completion, in room
Temperature is lower to carry out cold moudling, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 18MPa, temperature is
It is 180 DEG C, heat-insulation pressure keeping 1.5h, cooling, discharging.
Embodiment 3
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 60 parts of epoxy resin, phenolic aldehyde tree
40 parts of rouge, 15 parts of zirconium oxide, 11 parts of cobalt oxide, 8 parts of silicon carbide, 7 parts of titanium dioxide, 6.5 parts of silicon nitride crystal whisker, polyethylene glycol 15
Part, 7 parts of nonylphenol polyoxyethylene ether, 3 parts of n,N-Dimethylformamide, 9 parts of Arabic gum, 1.4 parts of antioxidant, fire retardant 1.6
Part, 1.5 parts of plasticizer, 4.5 parts of copper foil.
Wherein, the silicon nitride crystal whisker diameter is 2 μm, length 3mm.
Wherein, the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2.
In the present embodiment, the preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 12min with 650r/min, obtain glue under the conditions of 110 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 135 DEG C of temperature conditions
Under, 25min is stirred with 40r/min, it is cooling, obtain mixture；
3) 250 meshes are smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
It moulds agent the ultrasonic wave of 40KHz is aided with the microwave heating 12min of 900W in heating process, be sent into mold after the completion, in room
Temperature is lower to carry out cold moudling, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 18MPa, temperature is
It is 180 DEG C, heat-insulation pressure keeping 1.5h, cooling, discharging.
Embodiment 4
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 65 parts of epoxy resin, phenolic aldehyde tree
45 parts of rouge, 18 parts of zirconium oxide, 13 parts of cobalt oxide, 9 parts of silicon carbide, 8 parts of titanium dioxide, 7 parts of silicon nitride crystal whisker, 18 parts of polyethylene glycol,
6 parts of nonylphenol polyoxyethylene ether, 2.5 parts of n,N-Dimethylformamide, 7 parts of Arabic gum, 1.2 parts of antioxidant, fire retardant 1.2
Part, 1.2 parts of plasticizer, 4 parts of copper foil.
Wherein, the silicon nitride crystal whisker diameter is 2 μm, length 3mm.
Wherein, the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2.
In the present embodiment, the preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 12min with 650r/min, obtain glue under the conditions of 110 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 135 DEG C of temperature conditions
Under, 25min is stirred with 40r/min, it is cooling, obtain mixture；
3) 250 meshes are smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
It moulds agent the ultrasonic wave of 40KHz is aided with the microwave heating 12min of 900W in heating process, be sent into mold after the completion, in room
Temperature is lower to carry out cold moudling, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 18MPa, temperature is
It is 180 DEG C, heat-insulation pressure keeping 1.5h, cooling, discharging.
Embodiment 5
A kind of high tenacity insulating circuit board substrate, including below according to the raw material of parts by weight: 70 parts of epoxy resin, phenolic aldehyde tree
50 parts of rouge, 20 parts of zirconium oxide, 15 parts of cobalt oxide, 10 parts of silicon carbide, 10 parts of titanium dioxide, 8 parts of silicon nitride crystal whisker, polyethylene glycol 20
Part, 10 parts of nonylphenol polyoxyethylene ether, 4 parts of n,N-Dimethylformamide, 12 parts of Arabic gum, 2 parts of antioxidant, 2 parts of fire retardant,
2 parts of plasticizer, 6 parts of copper foil.
Wherein, the silicon nitride crystal whisker diameter is 3 μm, length 4mm.
Wherein, the fire retardant is mixed by magnesium hydroxide, aluminium hydroxide by weight 1:2.
In the present embodiment, the preparation method of the high tenacity insulating circuit board substrate, steps are as follows:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl
Formamide, Arabic gum are stirred to react 15min with 800r/min, obtain glue under the conditions of 120 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 150 DEG C of temperature conditions
Under, 30min is stirred with 500r/min, it is cooling, obtain mixture；
3) 300 meshes are smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
It moulds agent the ultrasonic wave of 50KHz is aided with the microwave heating 15min of 1000W in heating process, be sent into mold after the completion, in room
Temperature is lower to carry out cold moudling, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 20MPa, temperature is
It is 200 DEG C, heat-insulation pressure keeping 2h, cooling, discharging.
Comparative example 1
Compared with Example 3, silicon nitride crystal whisker and Arabic gum are free of, other are same as Example 3.
Comparative example 2
Compared with Example 3, nonylphenol polyoxyethylene ether is free of, other are same as Example 3.
Comparative example 3
Compared with Example 3, silicon nitride crystal whisker, Arabic gum and nonylphenol polyoxyethylene ether, other and embodiment 3 are free of
It is identical.
Circuit board substrate prepared by embodiment 1-5 and comparative example 1-3 is tested for the property, test result such as 1 institute of table
Show.
Table 1
Circuit board substrate prepared by the present invention be can be seen that from result above in the common mating reaction of various raw materials
Under, it can bear and biggish external force, bending strength is high, and it is not easy to break, and circuit board substrate has good insulating properties
Can, even if will not can carry out effective protection there is a phenomenon where puncturing under high-tension electricity effect to circuit, improve production
The security performance and service life of product.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of high tenacity insulating circuit board substrate, which is characterized in that including below according to the raw material of parts by weight: epoxy resin
50-70 parts, 30-50 parts of phenolic resin, 10-20 parts of zirconium oxide, 8-15 parts of cobalt oxide, 5-10 parts of silicon carbide, 5-10 parts of titanium dioxide,
5-8 parts of silicon nitride crystal whisker, 10-20 parts of polyethylene glycol, 5-10 parts of nonylphenol polyoxyethylene ether, 2-4 parts of n,N-Dimethylformamide,
6-12 parts of Arabic gum, 1-2 parts of antioxidant, 1-2 parts of fire retardant, 1-2 parts of plasticizer, 3-6 parts of copper foil.
2. high tenacity insulating circuit board substrate according to claim 1, which is characterized in that including below according to parts by weight
Raw material: 55-65 parts of epoxy resin, 35-45 parts of phenolic resin, 12-18 parts of zirconium oxide, 9-13 parts of cobalt oxide, 6-9 parts of silicon carbide,
6-8 parts of titanium dioxide, 6-7 parts of silicon nitride crystal whisker, 12-18 parts of polyethylene glycol, 6-9 parts of nonylphenol polyoxyethylene ether, N, N- dimethyl
2.5-3.5 parts of formamide, 7-11 parts of Arabic gum, 1.2-1.8 parts of antioxidant, 1.2-1.8 parts of fire retardant, plasticizer 1.2-1.8
Part, 4-5 parts of copper foil.
3. high tenacity insulating circuit board substrate according to claim 2, which is characterized in that including below according to parts by weight
Raw material: 60 parts of epoxy resin, 40 parts of phenolic resin, 15 parts of zirconium oxide, 11 parts of cobalt oxide, 8 parts of silicon carbide, 7 parts of titanium dioxide, nitridation
Silicon wafer must 6.5 parts, 15 parts of polyethylene glycol, 7 parts of nonylphenol polyoxyethylene ether, 3 parts of n,N-Dimethylformamide, 9 parts of Arabic gum,
1.4 parts of antioxidant, 1.6 parts of fire retardant, 1.5 parts of plasticizer, 4.5 parts of copper foil.
4. high tenacity insulating circuit board substrate according to claim 1, which is characterized in that the silicon nitride crystal whisker diameter is
1-3 μm, length 2-4mm.
5. high tenacity insulating circuit board substrate according to claim 4, which is characterized in that the fire retardant is by hydroxide
Magnesium, aluminium hydroxide are mixed by weight 1:2.
6. a kind of preparation method of high tenacity insulating circuit board substrate a method as claimed in any one of claims 1 to 5, which is characterized in that packet
Include following steps:
1) it is dissolved by heating after mixing epoxy resin, phenolic resin, adds nonylphenol polyoxyethylene ether, N, N- dimethyl formyl
Amine, Arabic gum are stirred to react 10-15min with 500-800r/min, obtain glue under the conditions of 100-120 DEG C of temperature；
2) zirconium oxide, cobalt oxide, silicon carbide, titanium dioxide is added in the glue obtained to step 1), in 120-150 DEG C of temperature condition
Under, 20-30min is stirred with 300-500r/min, it is cooling, obtain mixture；
3) 200-300 mesh is smashed it through to the mixture that step 2) obtains, silicon nitride crystal whisker, antioxidant, fire retardant, increasing is added
Modeling agent is aided with the ultrasonic wave of 30-50KHz, is sent into after the completion with the microwave heating 10-15min of 800-1000W in heating process
In mold, cold moudling is carried out at room temperature, obtains prepreg；
4) prepreg and copper foil that step 3) obtains are overlapped, is put into a press, adjusting pressure is 15-20MPa, temperature is
It is 150-200 DEG C, heat-insulation pressure keeping 1-2h, cooling, discharging.
7. a kind of application of circuit board substrate a method as claimed in any one of claims 1 to 5 in electronic equipment production.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110650582A (en) * | 2019-10-23 | 2020-01-03 | 常州澳弘电子股份有限公司 | Aluminum-based PCB with high mechanical strength and toughness and preparation method thereof |
| CN113301714A (en) * | 2021-05-25 | 2021-08-24 | 安徽鑫泰电子科技有限公司 | Circuit board substrate suitable for copper paste printing and manufacturing method thereof |
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| CN101550264A (en) * | 2009-04-30 | 2009-10-07 | 苏州生益科技有限公司 | Resin matching fluid used for metal foil laminated board |
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| CN105419237A (en) * | 2015-12-17 | 2016-03-23 | 广东生益科技股份有限公司 | Thermosetting resin composition, prepreg containing same, laminated board and printed circuit board |
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| CN101550264A (en) * | 2009-04-30 | 2009-10-07 | 苏州生益科技有限公司 | Resin matching fluid used for metal foil laminated board |
| CN103131007A (en) * | 2011-11-22 | 2013-06-05 | 台光电子材料股份有限公司 | Thermosetting resin composition and laminated plate and circuit board employing same |
| CN105419237A (en) * | 2015-12-17 | 2016-03-23 | 广东生益科技股份有限公司 | Thermosetting resin composition, prepreg containing same, laminated board and printed circuit board |
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| CN110650582A (en) * | 2019-10-23 | 2020-01-03 | 常州澳弘电子股份有限公司 | Aluminum-based PCB with high mechanical strength and toughness and preparation method thereof |
| CN113301714A (en) * | 2021-05-25 | 2021-08-24 | 安徽鑫泰电子科技有限公司 | Circuit board substrate suitable for copper paste printing and manufacturing method thereof |
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