CN109309341A - 配有具有接收过量焊料的结构的承载件的半导体光学组件 - Google Patents

配有具有接收过量焊料的结构的承载件的半导体光学组件 Download PDF

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CN109309341A
CN109309341A CN201810825162.7A CN201810825162A CN109309341A CN 109309341 A CN109309341 A CN 109309341A CN 201810825162 A CN201810825162 A CN 201810825162A CN 109309341 A CN109309341 A CN 109309341A
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load
bearing part
base portion
optical module
module according
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CN109309341B (zh
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藤村康
三泽太
三泽太一
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)

Abstract

本发明公开一种光学组件，其包括至少一个半导体光学器件、承载件、外壳以及将承载件固定到外壳的共晶合金。承载件安装有与半导体光学器件耦合的部件。外壳包括陶瓷制成的侧壁和金属制成的基部，以形成将半导体光学器件、承载件以及部件封闭在内部的空间。承载件提供了面向基部和侧壁的室，其中该室接收从承载件与基部之间的间隙渗出的过量的共晶合金。

Description

配有具有接收过量焊料的结构的承载件的半导体光学组件
技术领域
本发明涉及设有用于安装部件的承载件的半导体光学组件。特别地，本发明的承载件提供了用于接收固定承载件的过量焊料的结构。
背景技术
随着要传输的信息量***性地增加，持续且急切地提出了使光学组件和安装在光学组件中的光学子组件(OSA)更小的需求。这不可避免地导致封闭在光学组件和光学子组件内的光学和/或电子部件的封装密度增加，这意味着在组装有部件的基板上这些部件之间的空间或距离变得越来越窄。
日本专利申请公开No.JP2015-095471A公开了一种光学传输组件，其配有四个激光二极管(LD)、用于驱动LD的驱动器、用于感测从LD输出的光信号的强度的四个光电二极管(PD)、光复用器以及在单个热电式冷却器(TEC)上的热敏电阻。为了使光信号的波长保持恒定，必须精确地控制LD的温度。因此，用于驱动TEC的电子电路变大。此外，为了高速驱动LD，驱动器也变大。然而，与这些背景相悖的是，上述持续需求仍然保持光学组件必须形成为纤薄的主题。
发明内容
本发明的一方面涉及一种光学组件，其包括至少一个半导体光学器件、承载件、外壳以及将承载件固定到外壳的共晶合金。承载件安装有与半导体光学器件耦合的部件。本发明的外壳包括侧壁和基部。侧壁由多层陶瓷制成，而基部由金属制成。侧壁和基部形成将至少一个半导体光学器件和承载件与部件封闭起来的空间。本发明的特征在于承载件在面向基部和侧壁的角中提供室，其中该室可以接收从承载件与基部之间的间隙渗出的过量的共晶合金。
附图说明
考虑到下面结合附图对本发明各种实施例的详细描述，可以更全面地理解本发明，其中：
图1是示出根据本发明实施例的光学传输组件的内部的剖切透视图；
图2示出了光学传输组件的围绕承载件的主要部分的剖视图；
图3是示出过量焊料从陶瓷层与基部之间的间隙渗出并在基部的顶部扩散的状态的剖视图；
图4示出了围绕没有倒角的现有技术承载件的主要部分、TEC以及也没有倒角的基板的剖视图；
图5A和图5B示出了将现有技术承载件安装到基部上的过程；
图6A和图6B示出了将本实施例的承载件安装到基部上的过程；
图7A至图7C示出了形成承载件的过程；以及
图8A至图8C示出了形成另一承载件的过程，该承载件具有与从倒角得到的室不同的室。
具体实施方式
将参考附图来描述安装在光学传输组件内的根据本发明的承载件的一些实施例。然而，本发明的范围不限于这些实施例；并且包括所附权利要求中定义的范围内的所有修改和变更。而且，本发明可以包括任何实施例的所有组合，只要这些实施例可以彼此组合即可。在下面的描述中，彼此相同或相似的数字或符号将指代彼此相同或相似的元件，而不重复说明。
图1是示出根据本发明实施例的光学传输组件的内部的剖切透视图，其中光学传输组件1设有承载件21，该承载件21上安装有驱动器22和电子部件；而图2示出了光学传输组件1内的围绕承载件21的主要部分的剖面。图1省略了连接在部件与焊料之间的键合线。光学传输组件1提供盒形外壳2，该盒形外壳2在一侧附接光耦合部分(图1中未示出但位于图1中的右手侧)并在与前面所述的一侧相反的另一侧附接馈通部。
安装在外壳2内的是：多个激光二极管(LD)61，具体地说，在本实施例中为四个LD；驱动器22，其电驱动四个LD 61；多个电感器53；多个PD(图1中未示出)，其用于感测从LD 61输出的光信号的强度；诸如透镜62等的光学部件；热电式冷却器(TEC)32；热敏电阻(其在图中也被省略)。对应于各个LD 61提供电感器53和PD，也就是说，本实施例提供四个PD和四个电感器53。
外壳2包括：基部11，其可以由具有相当大的导热率的材料(典型地为铜钨(CuW)的烧结材料)制成；以及侧壁12，其由多层陶瓷制成。侧壁12包括多个层12a1至12a6，每个层由陶瓷制成，其中本实施例提供六个(6个)层，其中堆叠在中间的两个层12a3和12a4的相应的顶表面上设有互连部，而包括两个中间层12a3和12a4在内的下面的四层12a1至12a4构成馈通部。在两个中间陶瓷层12a3和12a4中设有通孔，这些通孔穿透各个层12a3和12a4，以电连接互连部。互连部与配备在外壳2内的电路连接，并且暴露在外壳2的外部，作为信号端子和偏置端子来操作。在基部11上且在外壳2内安装有承载件21，并且在承载件21上安装有驱动器22。承载件21借助金锡(AuSn)的共晶焊料与基部11焊接起来；而TEC 32的底板32a通过无铅焊料(其熔点低于AuSn共晶焊料的熔点，例如锡银铜(SnAgCu))与基部11焊接起来。
侧壁12可以通过对各个陶瓷层12a1至12a6进行烧结来形成。侧壁12用银铜(AgCu)型的焊料13固定到由CuW制成的基部11，而各个陶瓷层12a1至12a6也可以使用AgCu焊料烧结而成。为了获得可靠的烧结，优选地在陶瓷层之间以及在侧壁12和基部11之间施加足够量的AgCu焊料。AgCu焊料的量不足可能会在固化的焊料中留下气孔。图3是示出过量焊料13S从最下陶瓷层12a1与基部11之间的间隙渗出并在基部11的顶表面中扩散的状态的剖视图，其中扩散的焊料13S引起粗糙表面，其平均粗糙度Ra变成大于0.1μm但小于10μm。
本实施例的光学传输组件1将驱动器22安装在外壳2内，其中驱动器22电驱动四个LD 61。在馈通部上的RF端子中提供的驱动信号进入驱动器22；由互连部传送并到达驱动器22。驱动器22将由此提供的驱动信号放大，并用放大的驱动信号驱动LD 61。本实施例中的LD 61可以以所谓的分流驱动模式(shunt-driving mode)来驱动。具体地说，在分流驱动模式中，LD和晶体管相对于电感器并联连接。通过导通/关断晶体管，在LD和晶体管之间进行切换通过电感器从外部提供的偏置电流。当晶体管关断时，偏置电流在LD中流动，而当晶体管导通时，偏置电流在晶体管中流动。因此，在分流模式驱动中电感器不可避免地具有相当大的电感，这使得电感器较大。
本实施例的光学传输组件1将电感器53(其数量与LD 61的数量相同)借助间隔物51和承载件52安装在驱动器22上。间隔物51可以由硅(Si)或氮化铝(AlN)制成，而承载件52由具有相对较小介电常数的二氧化硅(SiO2)制成，以减小电感器53与驱动器22之间的寄生电容。承载件52的顶表面上设有互连部52L，其中互连部52L彼此电隔离。供应至DC端子的偏置电流经由键合线41(其在图1中被省略)提供给互连部52L；通过电感器53、经由其它键合线42提供给安装有LD 61的LD承载件35；并且最后提供给LD 61。
TEC 32设有底板32a、多个帕尔贴元件32b和顶板32c，其中底板32a和顶板32c将帕尔贴元件32b夹在中间。在TEC 32上借助基板34安装有LD承载件35。除了安装有LD承载件35之外，基板34上还安装有多个透镜62和一些光学部件。从导热性良好的观点出发，承载件21和LD承载件35优选地由氮化铝(AlN)制成。具有矩形平面截面的承载件21设有尺寸与驱动器22的平面尺寸基本上相等的矩形顶表面。
驱动器22设有输入盘(pad)22P和输出盘23P，其中前者输入盘22P沿着面向第三陶瓷层12a3的顶表面的边缘布置；而后者输出盘23P沿着面向LD承载件35的另一边缘布置。输入盘22P利用键合线41连接到设置在第三陶瓷层12a3的顶表面上的互连部12L上，其中输入盘22P的水平高度基本上等于或略高于第三陶瓷层12a3的顶表面的水平高度。输出盘23P利用键合线42与设置在LD承载件35的顶表面上的互连部35L引线键合，其中输出盘23P的水平高度基本上等于或略高于LD承载件35上的互连部35L的水平高度。
为了高速驱动LD 61，键合线41和42的长度优选地设定成尽可能短。本实施例的光学传输组件1将承载件21尽可能靠近馈通部(即，侧壁12)放置。然而，在基部11的紧邻下面陶瓷层12a1的区域中留下了过量的AgCu焊料。此外，用于将承载件21固定到基部11上的金锡(AuSn)型共晶合金可能从基部11与承载件21之间的间隙渗出并在基部11的表面上扩散。这种过量的AgCu焊料和在基部11的表面上扩散的过量的共晶AuSn合金可能会阻止承载件21足够靠近侧壁12地安装在基部11上。为了将承载件21安装得足够靠近侧壁12，本实施例的光学传输组件1将承载件21的面向侧壁12的底角切掉，以形成倒角21a。倒角21a可以提供用来接收从承载件21与基部11之间的间隙渗出的过量焊料的室，并且有效地防止形成焊球(这将在本说明书中稍后描述)。
本实施例的承载件21的安装有驱动器22的顶表面也设有其它倒角21b。倒角21b可以形成用来接收用于将驱动器22安装到承载件21的顶表面上的过量焊料24的室。用于驱动器22的焊料24的熔点优选地低于用于将承载件21固定到基部11上的共晶AuSn合金的熔点。此外，TEC 32的底板32a中设有面向承载件21的倒角31a；并且基板34也设有面向承载件21的倒角34a，其中LD承载件35安装在基板34的包括倒角34a的区域上，也就是说LD承载件35覆盖倒角34a。这种倒角31a和34a也可以形成用来吸收或接收过量焊料的室，并有效地防止形成焊球。
图4示出了围绕现有技术承载件121的主要部分、TEC 132和基板134的剖视图，其中这些部件与本实施例的承载件21、TEC 32和基板34相当。现有技术承载件121、现有技术TEC 132的底板132a和现有技术的基板134没有倒角。图5A和图5B示出了将现有技术承载件121安装到基部11上的过程；并且图6A和图6B示出了将本实施例的承载件21安装到基部11上的过程。
如上所述，基部11的靠近侧壁12的区域中留下了从侧壁12与基部11之间的间隙渗出的过量焊料13S，其中过量焊料13S引起粗糙表面。将承载件21更靠近侧壁12地安装在基部11上时，承载件21必须放置在渗出的焊料13S的这个粗糙表面上，这不可避免地要求厚厚地施加焊料23以补偿渗出的焊料13S的表面粗糙度并防止在焊料23中引起气孔。因此，更多的过量焊料23S从承载件121与基部11之间的间隙渗出，并且可能形成焊球23S，如图5B所示。更靠近承载件121安装的其它部件必须设定用于避免那些焊球23S的室，最终结果是使得键合线较长。
此外，当焊球23S到达用于安装TEC 132的区域并且TEC 132必须安装在焊球23S上时，TEC 132不仅不能保证其顶板132c以及顶板132c上的基板134的水平高度，而且也不能保证底板132a和基部11之间的热传递。在TEC 132的组装期间，底板132a偶尔会破裂。
因此，本实施例的承载件21设有面向基部11的倒角21a，以形成用于接收过量焊料23的室26。室26可以有效地防止引起焊球23S。承载件21的包括倒角21a的底表面中设有金属膜25。承载件21的包括倒角21b的顶表面上也设有另一金属膜(图中未示出)。
当承载件121的顶表面未设置倒角时，从驱动器122与承载件121之间的间隙渗出的过量焊料可能会引起焊球。类似地，没有倒角的基板134可能引起由于从基板134与LD承载件35之间的间隙渗出的过量焊料37而得到的焊球37S。
应避免焊球24S和/或37S接触任何部件。特别地，当以分流驱动模式驱动LD 61时，LD 61的阳极和阴极优选地经由最短路径与在驱动器22中设置的晶体管直接连接而不在外壳2内接地。当LD 61的各个阴极在外壳内接地时，LD 61之间的串扰由于接地的干扰而增加。另一方面，将TEC 132或基板134安装为保证用于避免焊球24S和37S接触其它部件的足够空间，这使得将驱动器22与LD承载件35连接的键合线42较长，并且键合线42上承载的高频信号的质量劣化。分别设置在承载件21的顶部和基板34的顶部中的倒角21b和34a可以形成用于接收过量焊料的室，并且使得TEC 32或基板34能够更靠近驱动器22放置。
接下来，将描述形成具有倒角的承载件21的过程。图7A至图7C示出了形成承载件21的过程。首先，该过程在原始基板21'(其可以由诸如氮化铝(AlN)、氧化铝(Al2O3)等的陶瓷制成)的表面上纵向和横向地形成V形槽。由V形槽包围的区域对应于承载件21的平面尺寸。V形槽具有两个斜表面，这两个斜表面相对于原始基板21'的表面分别形成基本上45°的角度，并且V形槽的深度为0.1±0.05mm，这意味着由倒角21a和21b形成的室的深度为0.1±0.05mm。承载件21可以具有与驱动器22的平面尺寸基本上相等的平面截面，以及如下高度或厚度：使得承载件21和驱动器22的总厚度变得基本上等于或略小于下面三个陶瓷层12a1至12a3的总厚度。也就是说，承载件21的厚度或高度优选地设定成使得驱动器22的顶部水平高度(取决于焊料23、承载件21、焊料24和驱动器22的厚度)变得基本上等于第三侧壁12a3的顶部水平高度。
然后，用金属膜25涂覆原始基板21'，该金属膜25堆叠了厚度分别为0.1μm、0.2μm和0.5μm的钛(Ti)、铂(Pt)和金(Au)。真空蒸发可以沉积出堆叠的金属膜25。如果需要，可以在堆叠的金属膜25上经由厚度为0.5μm的另一Pt膜形成被厚度为0.15μm的Au膜覆盖的厚度为10μm的AuSn型共晶焊料。
然后，利用厚度比V形槽的宽度薄的刀板沿着V形槽27切割原始基板21'。具体地说，将胶带附接至原始基板21'的与设有V形槽27的表面相反的表面上，其中该胶带是一种在普通半导体工艺的切割中使用的膨胀胶带(expanding tape)；沿着V形槽27切割原始基板21'；并且使胶带膨胀；可以将原始基板21'分割成各个承载件21。由此形成的承载件21的包围其顶表面的各个边缘中设有倒角。对于设置在承载件21的顶表面中的倒角21b，在原始基板21'的两个表面中形成V形槽27。可以通过选择原始基板21'的两个边缘作为基准来执行V形槽27在各个表面中的位置对准。
用于接收上述过量焊料的室可以由倒角形成。然而，室的形状不受从倒角得到的形状的限制；用来接收过量焊料的室只是对该室所要求的功能。图8A至图8C示出了形成具有另一种室26A的承载件21A的过程，该室26A不同于从倒角得到的室。图8A至图8C所示的室26A是从U形槽27A得到的。而且，堆叠的金属膜25可以通过溅射形成，因为U形槽具有两个陡峭的侧部，通过真空蒸发难以将金属沉积到这两个陡峭的侧部上。溅射可以将金属沉积在具有足够厚度的这种陡峭侧部上。其它过程基本上类似于上述过程。代替V形和/或U形，矩形截面的槽也可以适于作为所述槽。
如此描述的实施例关注于承载件21更靠近侧壁12安装的布置。然而，具有用于接收过量焊料的室26的承载件21不限于这些布置。本实施例的承载件21可以适用于另一种布置，其中承载件21安装得更靠近可以安装其它电气和/或光学部件的另一承载件。在这样的布置中，两个承载件可以布置得足够靠近，只要至少一个承载件提供用来接收过量焊料的室即可。
在前面的详细描述中，已经参考本发明的特定示例性实施例描述了本发明的光学传输组件。然而，显而易见的是，在不脱离本发明的更广泛的精神和范围的情况下，可以对所述特定示例性实施例进行各种修改和变更。例如，上面的描述关注于配有一个或多个LD的光学传输组件；但是，本实施例的承载件可以配备在提供安装在承载件上的一个或多个光电二极管和电路的光接收组件内。因此，本说明书和附图相应地被认为是说明性的而非限制性的。
本申请基于并要求2017年7月26日提交的日本专利申请No.2017-144447的优先权，该申请的全部内容通过引用并入本文。

Claims (13)

1.一种光学组件，包括：
至少一个半导体光学器件；
承载件，其安装有与所述半导体光学器件耦合的部件；
外壳，其包括由陶瓷制成的侧壁以及由金属制成的基部，所述侧壁和所述基部形成用于将所述半导体光学器件、所述承载件以及所述部件封闭在内部的空间；以及
共晶合金，其用于将所述承载件固定到所述基部上，
其中，所述承载件在面向所述基部和所述侧壁的角部中提供室，所述室接收从所述承载件与所述基部之间的间隙渗出的过量的共晶合金。
2.根据权利要求1所述的光学组件，
其中，所述承载件中的所述室由倒角形成。
3.根据权利要求2所述的光学组件，
其中，所述室的深度为0.1±0.05mm。
4.根据权利要求1所述的光学组件，
其中，用于固定所述承载件的所述共晶合金是一种金锡的共晶焊料。
5.根据权利要求1所述的光学组件，
其中，所述侧壁包括多个陶瓷层，每个陶瓷层通过银铜型焊料烧结而成，并且
所述基部具有更靠近所述侧壁的区域，所述银铜焊料在所述区域从所述侧壁与所述基部之间的间隙渗出扩散。
6.根据权利要求5所述的光学组件，
其中，扩散到更靠近所述侧壁的所述区域中的所述银铜焊料的平均表面粗糙度为0.1μm至10μm。
7.根据权利要求1所述的光学组件，
其中，所述部件用含金锡的另一种共晶合金安装在所述承载件上，并且
所述承载件提供了用于接收从所述承载件与所述部件之间的间隙渗出的另一种过量共晶合金的其它室。
8.根据权利要求7所述的光学组件，
其中，所述承载件的顶表面中设有形成所述其它室的倒角，并且
所述部件覆盖所述其它室。
9.根据权利要求7所述的光学组件，
其中，所述其它室的深度为0.1±0.05mm。
10.根据权利要求1所述的光学组件，
其中，所述承载件的面向并附接至所述基部的包括所述室的表面上设有金属膜。
11.根据权利要求1所述的光学组件，
其中，所述部件的平面尺寸实质上等于所述承载件的平面尺寸。
12.根据权利要求1所述的光学组件，
其中，所述至少一个半导体光学器件是半导体激光二极管，
所述光学组件进一步包括热电式冷却器、基板以及半导体激光二极管承载件；所述热电式冷却器使用金锡共晶合金紧邻所述承载件安装在所述基部上，所述基板安装在所述热电式冷却器上，所述半导体激光二极管承载件使用熔点比将所述热电式冷却器固定到所述基部上的所述金锡共晶合金的熔点低的焊料安装在所述基板上，所述半导体激光二极管安装在所述半导体激光二极管承载件上，并且
所述热电式冷却器包括底板、顶板以及置于所述底板与所述顶板之间的多个帕尔贴元件，所述底板具有面向所述承载件的倒角，所述底板的所述倒角接收用于将所述热电式冷却器固定到所述基部上的过量的金锡共晶合金。
13.根据权利要求12所述的光学组件，
其中，所述基板设有面向所述承载件的倒角，所述基板中的所述倒角面向所述承载件且被所述半导体激光二极管承载件覆盖。
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