CN109300831B - 一种磁控溅射镀膜机用基片转移保护装置 - Google Patents
一种磁控溅射镀膜机用基片转移保护装置 Download PDFInfo
- Publication number
- CN109300831B CN109300831B CN201811450009.7A CN201811450009A CN109300831B CN 109300831 B CN109300831 B CN 109300831B CN 201811450009 A CN201811450009 A CN 201811450009A CN 109300831 B CN109300831 B CN 109300831B
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- China
- Prior art keywords
- connector
- magnetron sputtering
- coating machine
- protection device
- substrate transfer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000011248 coating agent Substances 0.000 title claims abstract description 22
- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 230000033228 biological regulation Effects 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 10
- 229910002027 silica gel Inorganic materials 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811450009.7A CN109300831B (zh) | 2018-11-30 | 2018-11-30 | 一种磁控溅射镀膜机用基片转移保护装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811450009.7A CN109300831B (zh) | 2018-11-30 | 2018-11-30 | 一种磁控溅射镀膜机用基片转移保护装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109300831A CN109300831A (zh) | 2019-02-01 |
CN109300831B true CN109300831B (zh) | 2021-03-23 |
Family
ID=65142013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811450009.7A Active CN109300831B (zh) | 2018-11-30 | 2018-11-30 | 一种磁控溅射镀膜机用基片转移保护装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109300831B (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05186291A (ja) * | 1992-01-10 | 1993-07-27 | Murata Mfg Co Ltd | 液相エピタキシャル成長装置 |
JPH1071587A (ja) * | 1996-08-29 | 1998-03-17 | Nec Kyushu Ltd | 吸着パッド |
KR100928674B1 (ko) * | 2009-04-07 | 2009-11-27 | 삼성코닝정밀유리 주식회사 | 비접촉 석션 그립핑 장치 및 이를 갖는 비접촉 석션 그립핑 프레임 |
DE102015213818A1 (de) * | 2015-07-22 | 2017-01-26 | Asys Automatisierungssysteme Gmbh | Vorrichtung zur Handhabung von flachen Substraten |
CN206725957U (zh) * | 2017-05-10 | 2017-12-08 | 刘鹏 | 放射科用胶片抓取器 |
-
2018
- 2018-11-30 CN CN201811450009.7A patent/CN109300831B/zh active Active
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Publication number | Publication date |
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CN109300831A (zh) | 2019-02-01 |
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TR01 | Transfer of patent right |
Effective date of registration: 20240131 Address after: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Dragon totem Technology (Hefei) Co.,Ltd. Country or region after: China Address before: 415000 3150 Dongting Road, Wuling District, Changde, Hunan Patentee before: HUNAN University OF ARTS AND SCIENCE Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240709 Address after: Room 1502, Commercial Office Building 3 #, Plot B8, Laimeng Duhui Community Commercial Center, No. 666 Huizhan Road, Honggutan District, Nanchang City, Jiangxi Province, China 330000 Patentee after: Nanchang Sansheng Semiconductor Co.,Ltd. Country or region after: China Address before: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee before: Dragon totem Technology (Hefei) Co.,Ltd. Country or region before: China |