CN109300795A - A kind of semiconductor power device encapsulation and preparation method thereof - Google Patents
A kind of semiconductor power device encapsulation and preparation method thereof Download PDFInfo
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- CN109300795A CN109300795A CN201811131943.2A CN201811131943A CN109300795A CN 109300795 A CN109300795 A CN 109300795A CN 201811131943 A CN201811131943 A CN 201811131943A CN 109300795 A CN109300795 A CN 109300795A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000005538 encapsulation Methods 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 145
- 239000011347 resin Substances 0.000 claims abstract description 145
- 238000009413 insulation Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 229920003023 plastic Polymers 0.000 claims abstract description 65
- 239000004033 plastic Substances 0.000 claims abstract description 65
- 238000007789 sealing Methods 0.000 claims abstract description 38
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 82
- 239000000843 powder Substances 0.000 claims description 63
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052582 BN Inorganic materials 0.000 claims description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 10
- 239000011889 copper foil Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 239000003365 glass fiber Substances 0.000 claims description 10
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000391 magnesium silicate Substances 0.000 claims description 10
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 10
- 235000019792 magnesium silicate Nutrition 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 239000004417 polycarbonate Substances 0.000 claims description 9
- 229920000515 polycarbonate Polymers 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010451 perlite Substances 0.000 claims description 8
- 235000019362 perlite Nutrition 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 69
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000000565 sealant Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000005995 Aluminium silicate Substances 0.000 description 3
- PZZYQPZGQPZBDN-UHFFFAOYSA-N aluminium silicate Chemical compound O=[Al]O[Si](=O)O[Al]=O PZZYQPZGQPZBDN-UHFFFAOYSA-N 0.000 description 3
- 229910000323 aluminium silicate Inorganic materials 0.000 description 3
- 235000012211 aluminium silicate Nutrition 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001562 pearlite Inorganic materials 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of semiconductor power device encapsulation and preparation method thereof, this method comprises: heat conduction silicone is arranged in the metallic substrates, insulating layer and circuit-wiring layer, and it is embedded in a heat insulation type frame of plastic, the circuit-wiring layer is divided into the firstth area and the secondth area, driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, power component and corresponding second pin are assembled in the second area of the circuit-wiring layer, it is subsequently formed the first resin seal glue-line, first conduction heat sealable glue-line, second conduction heat sealable glue-line, first heat-insulating and sealing glue-line and the second heat-insulating and sealing glue-line.Of the invention semiconductor power device encapsulation excellent combination property, stability is good and long service life.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, encapsulate and its prepare more particularly to a kind of semiconductor power device
Method.
Background technique
Intelligent power module is a kind of power drive based semiconductor power for combining power electronics and integrated circuit technique
Device encapsulation.In existing intelligent power module, generally for the heat dissipation performance for improving intelligent power module, common method
: a kind of method is that heat insulation structural is arranged in metal package substrate, and to hinder the horizontal proliferation of heat, another method is then
High thermal conductivity block is set in low thermally conductive package substrate.The heat dissipation performance of existing intelligent power module needs to be further increased same
When, while to ensure how it, with excellent sealing performance and humidity resistance, improves the comprehensive performance of intelligent power module, mention
The service life of high intelligent power module causes the extensive concern of people.
Summary of the invention
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of semiconductor power device encapsulation and its system are provided
Preparation Method.
To achieve the above object, the preparation method of a kind of semiconductor power device encapsulation proposed by the present invention, including it is following
Step:
1) metallic substrates are provided, form first annular shrinkage pool in the edge of the lower surface of the metallic substrates；
2) heat conduction silicone is bonded in the upper surface of the metallic substrates；
3) in the heat conduction silicone deposition of insulative material to form an insulating layer；
4) it is formed on the insulating layer circuit-wiring layer；
5) the part insulating layer and the heat conduction silicone in the metallic substrates are removed, it is recessed to form the second annular
Hole, the upper surface of the described second annular shrinkage pool exposure metallic substrates, is embedded into second ring for a heat insulation type frame of plastic
In shape shrinkage pool, the circuit-wiring layer is divided into the firstth area and the secondth area, wherein the region within the heat insulation type frame of plastic is
Firstth area, the region other than the heat insulation type frame of plastic are secondth area；
6) driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, in institute
It states and assembles power component and corresponding second pin in the second area of circuit-wiring layer；
7) metallic substrates for being equipped with driving element, power component, the first pin and second pin are placed in mold
In, it is initially injected a certain amount of resin material, to form the first resin seal glue-line, the first resin seal glue-line is full of institute
First annular shrinkage pool is stated, and the first resin seal glue-line only covers the lower end of the metallic substrates, is then poured into certain
First heat-conducting type resin material of amount, to form the first conduction heat sealable glue-line, the first conduction heat sealable glue-line is laid on described
On first resin seal glue-line, the first conduction heat sealable glue-line is completely covered the power component, and described first thermally conductive close
First pin of adhesive layer covering part and the second pin；It is then injected into a certain amount of second heat-conducting type resin material
Material, to form the second conduction heat sealable glue-line, the second conduction heat sealable glue-line is laid on the first conduction heat sealable glue-line, institute
The upper surface for stating the second conduction heat sealable glue-line is flushed with the top surface of the heat insulation type frame of plastic, is then removed from the molds；
8) a certain amount of first heat insulation type resin material is injected in the heat insulation type frame of plastic, it is heat-insulated close to form first
The driving element, the first heat-insulating and sealing glue-line covering part is completely covered in adhesive layer, the first heat-insulating and sealing glue-line
First pin, the upper surface of the first heat-insulating and sealing glue-line is flushed with the top surface of the heat insulation type frame of plastic；
9) the second conduction heat sealable glue-line and the first conduction heat sealable glue-line of part are removed, in the power member
The top of part forms the first blind hole, then the first radiating block is closely embedded into first blind hole, so that the radiating block
Bottom surface and the power component top surface between the first conduction heat sealable glue-line with a thickness of 80-150 microns；
10) the first resin seal glue-line of removal part and the metallic substrates, the heat insulation type of expose portion
Then the bottom surface of frame of plastic and the heat conduction silicone will inject one to form the second blind hole in the lower section in firstth area
The second quantitative heat insulation type resin material, to form the second heat-insulating and sealing glue-line, the bottom of the second heat-insulating and sealing glue-line
Face is flushed with the bottom surface of the metallic substrates, removes the first resin seal glue-line of part, again then with the exposed gold
Belong to the portion bottom surface of substrate.
The preparation method of semiconductor power device encapsulation as above, further, in the step 1, the metal substrate
Material be one of aluminium, copper and stainless steel, the first annular shrinkage pool is formed by wet etching or dry etching, it is described
The depth of first annular shrinkage pool is 0.5-1 millimeters.
The preparation method of semiconductor power device encapsulation as above, it is further, heavy by PECVD in the step 3
Silicon nitride, boron nitride or silicon carbide are accumulated to form the insulating layer, or by ALD method deposition of aluminium oxide to form the insulation
Layer, the insulating layer with a thickness of 80-150 microns.
The preparation method of semiconductor power device encapsulation as above, further, in the step 4 on the insulating layer shape
At the specific steps of circuit-wiring layer are as follows: copper foil is bonded on the insulating layer, and the copper foil of part is removed by etching technics,
To form the circuit-wiring layer.
The preparation method of semiconductor power device encapsulation as above, further, in the step 5, the heat-insulated shape
It includes following components that the material of material frame is calculated in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, and poly- carbonic acid
15-25 parts of ester, 5-10 parts of PMMA resin, 5-10 parts of glass fibre, 4-8 parts of alumina silicate powder, 3-6 parts of perlite powder,
3-5 parts of magnesium silicate powders；The first shrinkage pool passed through for metal wire is provided on the first side of the heat insulation type frame of plastic, it is described
It is recessed that supply first pin to pass through second is provided in heat insulation type frame of plastic on the second side opposite with the first side
Hole.
The preparation method of semiconductor power device encapsulation as above, further, in the step 7, first resin
The material of sealant layer is epoxy resin layer；It includes with the following group that the first heat-conducting type resin material is calculated in percentage by weight
Point: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 5-8 parts of alumina powder, boron nitride powder 4-6
Part, 3-6 parts of alpha-silicon nitride powders, 4-6 parts of silicon carbide powder；The second heat-conducting type resin material calculates packet in percentage by weight
Include following components: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 1-3 parts of alumina powder, boron nitride
1-3 parts of powder, 1-2 parts of silicon carbide powder.
The preparation method of semiconductor power device encapsulation as above, further, in the step 8, described first is heat-insulated
Type resin material includes epoxy resin AB glue and alumina silicate powder.
The preparation method of semiconductor power device encapsulation as above, further, in the step 9, the radiating block
Material is one of graphite, copper, aluminium；In the step 10, the second heat insulation type resin material is according to weight percent
Calculating includes following components: 20-40 parts of ABS resin, 30-40 parts of PET resin, and 15-25 parts of polycarbonate, PMMA resin 5-10
Part, 5-10 parts of glass fibre, 4-8 parts of alumina silicate powder, 3-6 parts of perlite powder, 3-5 parts of magnesium silicate powders.
The present invention also provides a kind of encapsulation of semiconductor power device, use the above method to prepare to be formed.
Compared with prior art, the beneficial effects of the present invention are:
In semiconductor power device encapsulation of the invention, a heat conduction silicone is bonded on the metallic substrate, is then being deposited
Insulating layer is formed, the heating conduction and anti-seismic performance of entire semiconductor power device encapsulation can be improved, while in metallic substrates
On insulating layer and heat conduction silicone in form the second annular shrinkage pool, and be embedded in a heat insulation type frame of plastic, pass through optimization heat insulation type
The material and concrete content of frame of plastic can effectively improve the heat-proof quality of heat insulation type frame of plastic, and then can to control
Element and power component are separately installed, and the heat transfer that can prevent power component from generating is to control element, and then can be with
Eliminate influence of the power component to control element performance；By the way that the first stacked resin seal glue-line, the first conduction heat sealable is arranged
The sealant layer that glue-line and the second conduction heat sealable glue-line are encapsulated as semiconductor power device, and set above power component
It is equipped with the first radiating block, effectively improves its sealing performance and heating conduction, the heat for facilitating power device to generate quickly is spread；The
The material of two heat insulation type resin materials is identical as the material of heat insulation type frame of plastic, so that it is easier to be bonded in heat insulation type frame of plastic
Together, so that driving element is completely in heat-insulated environment, and then ensure that it works at a suitable temperature, and then improve
Its service life；Metallic substrates are only exposed to the first resin seal glue-line in the bottom surface in the region for corresponding to power component,
While ensuring excellent heat radiation, the adhesive property of the first resin seal glue-line and metallic substrates is improved, effectively inhibits first
The removing of resin seal glue-line, while the performance of each semiconductor devices can be influenced to avoid moisture invasion.In addition, of the invention half
Preparation method is simple for conductor power device package, compatible with the manufacturing process of existing semiconductor power device encapsulation,
Convenient for large-scale industrial production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that semiconductor power device of the invention encapsulates.
Fig. 2 is the bottom view that semiconductor power device of the invention encapsulates.
Specific embodiment
As shown in Figs. 1-2, a kind of semiconductor power device encapsulation proposed by the present invention comprising metallic substrates 1, described
The edge of the lower surface of metallic substrates 1 forms first annular shrinkage pool 11, and in the upper surface of the metallic substrates 1, bonding one is led
Hot layer of silica gel 12 is formed with an insulating layer 13 in the heat conduction silicone 12, is formed on the insulating layer circuit-wiring layer
14, the part insulating layer 13 and the heat conduction silicone 14 in the metallic substrates 1 are removed, the second annular shrinkage pool is formed
15, the upper surface of the described second annular exposure of shrinkage pool 15 metallic substrates 1, a heat insulation type frame of plastic embedding 2 enters to described second
In annular shrinkage pool 15, the circuit-wiring layer 14 is divided into the firstth area and the secondth area, wherein within the heat insulation type frame of plastic 2
Region be firstth area, the region other than the heat insulation type frame of plastic 2 is secondth area, the heat insulation type frame of plastic
Be provided with the first shrinkage pool passed through for metal wire 21 on first side, in the heat insulation type frame of plastic 2 with the first side phase
Pair second side on be provided with the second shrinkage pool passed through for the pin of driving element, wherein the metal wire 21 is for described the
Wiring in one area and being electrically connected between the wiring in secondth area.
Driving element 3 and corresponding first pin 31 are assembled in the first area of the circuit-wiring layer 14,
Power component 4 and corresponding second pin 41, the first resin are assembled in the second area of the circuit-wiring layer 14
Sealant layer 5, the first resin seal glue-line 5 are full of the first annular shrinkage pool 11, and the first resin seal glue-line 5
The lower end of the metallic substrates 1, the first conduction heat sealable glue-line 6 are only covered, the first conduction heat sealable glue-line 6 is laid on described
On first resin seal glue-line 5, the first conduction heat sealable glue-line 6 is completely covered the power component 4, and described first thermally conductive
First pin 31 and the second pin 41 of 6 covering part of sealant layer, the second conduction heat sealable glue-line 7, described second
Conduction heat sealable glue-line 7 is laid on 6 on the first conduction heat sealable glue-line, the upper surface of the second conduction heat sealable glue-line 7 and institute
The top surface for stating heat insulation type frame of plastic 2 flushes, and forms the first heat-insulating and sealing glue-line 81 in the heat insulation type frame of plastic 2, and described
One heat-insulating and sealing glue-line 81 is completely covered the driving element 3, and described the of 81 covering part of the first heat-insulating and sealing glue-line
The upper surface of one pin 31, the first heat-insulating and sealing glue-line 81 is flushed with the top surface of the heat insulation type frame of plastic 2, removal
Partial the second conduction heat sealable glue-line 7 and the first conduction heat sealable glue-line 6, in the upper rectangular of the power component 4
At the first blind hole 71, the first radiating block 72 is closely embedded into first blind hole 71, so that the bottom of first radiating block 72
The first conduction heat sealable glue-line 6 between face and the top surface of the power component 4 with a thickness of 80-150 microns, remove part
The first resin seal glue-line 5 and the metallic substrates 1, the bottom surface of the heat insulation type frame of plastic 2 of expose portion and institute
Heat conduction silicone 12 is stated, to form the second blind hole 16 in the lower section in firstth area, it is heat-insulated then will to inject a certain amount of second
Type resin material, to form the second heat-insulating and sealing glue-line 9, the bottom surface of the second heat-insulating and sealing glue-line 9 and the metal
The bottom surface of substrate 1 flushes, and removes the first resin seal glue-line 5 of part, again then with the portion of the exposed metallic substrates 1
Divide bottom surface.
The invention also provides the preparation methods of above-mentioned semiconductor power device encapsulation, comprising the following steps:
1) metallic substrates are provided, form first annular shrinkage pool, institute in the edge of the lower surface of the metallic substrates
The material for stating metal substrate is one of aluminium, copper and stainless steel, forms first ring by wet etching or dry etching
Shape shrinkage pool, the depth of the first annular shrinkage pool are 0.5-1 millimeters, improve the first resin seal glue-line and metal being subsequently formed
The being tightly combined property of substrate, and then improve the sealing performance and humidity resistance of entire semiconductor power device encapsulation；
2) heat conduction silicone is bonded in the upper surface of the metallic substrates, improves entire semiconductor power device encapsulation
Heating conduction and anti-seismic performance；
3) in the heat conduction silicone deposition of insulative material to form an insulating layer, by PECVD deposited silicon nitride,
Boron nitride or silicon carbide are to form the insulating layer, or by ALD method deposition of aluminium oxide to form the insulating layer, it is described absolutely
Edge layer with a thickness of 80-150 microns, improve the insulation performance and heating conduction between metallic substrates and circuit-wiring layer, can
The heat transfer generated when quickly power component working is to metal substrate；
4) circuit-wiring layer, specific steps are formed on the insulating layer are as follows: bond copper foil on the insulating layer, and lead to
Over etching technique removes the copper foil of part, to form the circuit-wiring layer；
5) the part insulating layer and the heat conduction silicone in the metallic substrates are removed, it is recessed to form the second annular
Hole, the upper surface of the described second annular shrinkage pool exposure metallic substrates, is embedded into second ring for a heat insulation type frame of plastic
In shape shrinkage pool, the circuit-wiring layer is divided into the firstth area and the secondth area, wherein the region within the heat insulation type frame of plastic is
Firstth area, the region other than the heat insulation type frame of plastic are secondth area, the material of the heat insulation type frame of plastic according to
It includes following components that weight percent, which calculates: 20-40 parts of ABS resin, 30-40 parts of PET resin, and 15-25 parts of polycarbonate, PMMA
5-10 parts of resin, 5-10 parts of glass fibre, 4-8 parts of alumina silicate powder, 3-6 parts of perlite powder, magnesium silicate powders 3-5
Part；The first shrinkage pool passed through for metal wire, the heat insulation type frame of plastic are provided on the first side of the heat insulation type frame of plastic
In be provided with the second shrinkage pool passed through for first pin, heat-insulated plastic on the second side opposite with the first side
The heat transfer that the presence of frame can make control element and power component separate, and can prevent power component from generating extremely is controlled
Element processed, and then influence of the power component to control element performance can be eliminated；
6) driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, in institute
It states and assembles power component and corresponding second pin in the second area of circuit-wiring layer；
7) metallic substrates for being equipped with driving element, power component, the first pin and second pin are placed in mold
In, it is initially injected a certain amount of resin material, to form the first resin seal glue-line, the first resin seal glue-line is full of institute
First annular shrinkage pool is stated, and the first resin seal glue-line only covers the lower end of the metallic substrates, is then poured into certain
First heat-conducting type resin material of amount, to form the first conduction heat sealable glue-line, the first conduction heat sealable glue-line is laid on described
On first resin seal glue-line, the first conduction heat sealable glue-line is completely covered the power component, and described first thermally conductive close
First pin of adhesive layer covering part and the second pin；It is then injected into a certain amount of second heat-conducting type resin material
Material, to form the second conduction heat sealable glue-line, the second conduction heat sealable glue-line is laid on the first conduction heat sealable glue-line, institute
The upper surface for stating the second conduction heat sealable glue-line is flushed with the top surface of the heat insulation type frame of plastic, is then removed from the molds, wherein
The material of the first resin seal glue-line is epoxy resin layer；The first heat-conducting type resin material is in percentage by weight
Calculating includes following components: 20-40 parts of PET resin, 20-30 parts of PBT resin, and 10-20 parts of PS resin, 5-8 parts of alumina powder, nitrogen
Change boron powder 4-6 parts, 3-6 parts of alpha-silicon nitride powders, 4-6 parts of silicon carbide powder；The second heat-conducting type resin material is according to weight
It includes following components that percentage, which calculates: 20-40 parts of PET resin, 20-30 parts of PBT resin, and 10-20 parts of PS resin, alumina powder
1-3 parts, 1-3 parts of boron nitride powder, 1-2 parts of silicon carbide powder；By the way that the first stacked resin seal glue-line, first thermally conductive is arranged
The sealant layer that sealant layer and the second conduction heat sealable glue-line are encapsulated as semiconductor power device, the first heat-conducting type resin material
Material contains more heat filling, and then can quickly transmit heat；
8) a certain amount of first heat insulation type resin material is injected in the heat insulation type frame of plastic, it is heat-insulated close to form first
The driving element, the first heat-insulating and sealing glue-line covering part is completely covered in adhesive layer, the first heat-insulating and sealing glue-line
First pin, the upper surface of the first heat-insulating and sealing glue-line flushes with the top surface of the heat insulation type frame of plastic,
The first heat insulation type resin material includes epoxy resin AB glue and alumina silicate powder, can complete at room temperature
The preparation of one heat-insulating and sealing glue-line, method is simple and easy, reduces manufacturing cost；
9) the second conduction heat sealable glue-line and the first conduction heat sealable glue-line of part are removed, in the power member
The top of part forms the first blind hole, then the first radiating block is closely embedded into first blind hole, so that the radiating block
Bottom surface and the power component top surface between the first conduction heat sealable glue-line with a thickness of 80-150 microns, the heat dissipation
The material of block is one of graphite, copper, aluminium, and the presence of the first radiating block effectively increases dissipating for semiconductor power device encapsulation
Hot property；
10) the first resin seal glue-line of removal part and the metallic substrates, the heat insulation type of expose portion
Then the bottom surface of frame of plastic and the heat conduction silicone will inject one to form the second blind hole in the lower section in firstth area
The second quantitative heat insulation type resin material, to form the second heat-insulating and sealing glue-line, the bottom of the second heat-insulating and sealing glue-line
Face is flushed with the bottom surface of the metallic substrates, removes the first resin seal glue-line of part, again then with the exposed gold
Belong to the portion bottom surface of substrate；It includes following components: ABS resin that the second heat insulation type resin material is calculated in percentage by weight
20-40 parts, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fibre, aluminium silicate powder
It is 4-8 parts last, 3-6 parts of perlite powder, 3-5 parts of magnesium silicate powders, so that driving element is completely in heat-insulated environment, into
And ensure that it works at a suitable temperature, and then improve its service life.
Embodiment 1
The invention proposes a kind of preparation methods of semiconductor power device encapsulation, comprising the following steps:
1) metallic substrates are provided, form first annular shrinkage pool, institute in the edge of the lower surface of the metallic substrates
The material for stating metal substrate is aluminium, forms the first annular shrinkage pool, the depth of the first annular shrinkage pool by wet etching
It is 0.8 millimeter；
2) heat conduction silicone is bonded in the upper surface of the metallic substrates；
3) deposition of insulative material passes through PECVD depositing silicon silicon to form an insulating layer in the heat conduction silicone
To form the insulating layer, the insulating layer with a thickness of 120 microns；
4) circuit-wiring layer, specific steps are formed on the insulating layer are as follows: bond copper foil on the insulating layer, and lead to
Over etching technique removes the copper foil of part, to form the circuit-wiring layer；
5) the part insulating layer and the heat conduction silicone in the metallic substrates are removed, it is recessed to form the second annular
Hole, the upper surface of the described second annular shrinkage pool exposure metallic substrates, is embedded into second ring for a heat insulation type frame of plastic
In shape shrinkage pool, the circuit-wiring layer is divided into the firstth area and the secondth area, wherein the region within the heat insulation type frame of plastic is
Firstth area, the region other than the heat insulation type frame of plastic are secondth area, the material of the heat insulation type frame of plastic according to
It includes following components that weight percent, which calculates: 40 parts of ABS resin, 35 parts of PET resin, and 20 parts of polycarbonate, 8 parts of PMMA resin,
7 parts of glass fibre, 6 parts of alumina silicate powder, 6 parts of perlite powder, 5 parts of magnesium silicate powders；The heat insulation type frame of plastic
It is provided with the first shrinkage pool passed through for metal wire on first side, it is opposite with the first side in the heat insulation type frame of plastic
The second shrinkage pool passed through for first pin is provided on second side；
6) driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, in institute
It states and assembles power component and corresponding second pin in the second area of circuit-wiring layer；
7) metallic substrates for being equipped with driving element, power component, the first pin and second pin are placed in mold
In, it is initially injected a certain amount of resin material, to form the first resin seal glue-line, the first resin seal glue-line is full of institute
First annular shrinkage pool is stated, and the first resin seal glue-line only covers the lower end of the metallic substrates, is then poured into certain
First heat-conducting type resin material of amount, to form the first conduction heat sealable glue-line, the first conduction heat sealable glue-line is laid on described
On first resin seal glue-line, the first conduction heat sealable glue-line is completely covered the power component, and described first thermally conductive close
First pin of adhesive layer covering part and the second pin；It is then injected into a certain amount of second heat-conducting type resin material
Material, to form the second conduction heat sealable glue-line, the second conduction heat sealable glue-line is laid on the first conduction heat sealable glue-line, institute
The upper surface for stating the second conduction heat sealable glue-line is flushed with the top surface of the heat insulation type frame of plastic, is then removed from the molds, wherein
The material of the first resin seal glue-line is epoxy resin layer；The first heat-conducting type resin material is in percentage by weight
Calculating includes following components: 30 parts of PET resin, 25 parts of PBT resin, and 15 parts of PS resin, 6 parts of alumina powder, boron nitride powder 5
Part, 4 parts of alpha-silicon nitride powders, 5 parts of silicon carbide powder；The second heat-conducting type resin material calculate in percentage by weight include with
Lower component: 30 parts of PET resin, 25 parts of PBT resin, 15 parts of PS resin, 2 parts of alumina powder, 2 parts of boron nitride powder, silicon carbide
1 part of powder；
8) a certain amount of first heat insulation type resin material is injected in the heat insulation type frame of plastic, it is heat-insulated close to form first
The driving element, the first heat-insulating and sealing glue-line covering part is completely covered in adhesive layer, the first heat-insulating and sealing glue-line
First pin, the upper surface of the first heat-insulating and sealing glue-line flushes with the top surface of the heat insulation type frame of plastic,
The first heat insulation type resin material includes epoxy resin AB glue and alumina silicate powder, epoxy resin AB glue and aluminium silicate powder
In the range of the mass ratio at end is 15-25；
9) the second conduction heat sealable glue-line and the first conduction heat sealable glue-line of part are removed, in the power member
The top of part forms the first blind hole, then the first radiating block is closely embedded into first blind hole, so that the radiating block
Bottom surface and the power component top surface between the first conduction heat sealable glue-line with a thickness of 120 microns, the radiating block
Material be copper；
10) the first resin seal glue-line of removal part and the metallic substrates, the heat insulation type of expose portion
Then the bottom surface of frame of plastic and the heat conduction silicone will inject one to form the second blind hole in the lower section in firstth area
The second quantitative heat insulation type resin material, to form the second heat-insulating and sealing glue-line, the bottom of the second heat-insulating and sealing glue-line
Face is flushed with the bottom surface of the metallic substrates, removes the first resin seal glue-line of part, again then with the exposed gold
Belong to the portion bottom surface of substrate；It includes following components: ABS resin that the second heat insulation type resin material is calculated in percentage by weight
30 parts, 35 parts of PET resin, 20 parts of polycarbonate, 8 parts of PMMA resin, 7 parts of glass fibre, 6 parts of alumina silicate powder, expanded pearlite
4 parts, 4 parts of magnesium silicate powders of rock powder end.
Embodiment 2
The invention proposes a kind of preparation methods of semiconductor power device encapsulation, comprising the following steps:
1) metallic substrates are provided, form first annular shrinkage pool, institute in the edge of the lower surface of the metallic substrates
The material for stating metal substrate is copper, forms the first annular shrinkage pool, the depth of the first annular shrinkage pool by dry etching
It is 1 millimeter；
2) heat conduction silicone is bonded in the upper surface of the metallic substrates；
3) in the heat conduction silicone deposition of insulative material to form an insulating layer, by ALD method deposition of aluminium oxide with
Form the insulating layer, the insulating layer with a thickness of 80 microns；
4) circuit-wiring layer, specific steps are formed on the insulating layer are as follows: bond copper foil on the insulating layer, and lead to
Over etching technique removes the copper foil of part, to form the circuit-wiring layer；
5) the part insulating layer and the heat conduction silicone in the metallic substrates are removed, it is recessed to form the second annular
Hole, the upper surface of the described second annular shrinkage pool exposure metallic substrates, is embedded into second ring for a heat insulation type frame of plastic
In shape shrinkage pool, the circuit-wiring layer is divided into the firstth area and the secondth area, wherein the region within the heat insulation type frame of plastic is
Firstth area, the region other than the heat insulation type frame of plastic are secondth area, the material of the heat insulation type frame of plastic according to
It includes following components that weight percent, which calculates: 40 parts of ABS resin, 30 parts of PET resin, and 15 parts of polycarbonate, 10 parts of PMMA resin,
5 parts of glass fibre, 8 parts of alumina silicate powder, 6 parts of perlite powder, 3 parts of magnesium silicate powders；The heat insulation type frame of plastic
It is provided with the first shrinkage pool passed through for metal wire on first side, it is opposite with the first side in the heat insulation type frame of plastic
The second shrinkage pool passed through for first pin is provided on second side；
6) driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, in institute
It states and assembles power component and corresponding second pin in the second area of circuit-wiring layer；
7) metallic substrates for being equipped with driving element, power component, the first pin and second pin are placed in mold
In, it is initially injected a certain amount of resin material, to form the first resin seal glue-line, the first resin seal glue-line is full of institute
First annular shrinkage pool is stated, and the first resin seal glue-line only covers the lower end of the metallic substrates, is then poured into certain
First heat-conducting type resin material of amount, to form the first conduction heat sealable glue-line, the first conduction heat sealable glue-line is laid on described
On first resin seal glue-line, the first conduction heat sealable glue-line is completely covered the power component, and described first thermally conductive close
First pin of adhesive layer covering part and the second pin；It is then injected into a certain amount of second heat-conducting type resin material
Material, to form the second conduction heat sealable glue-line, the second conduction heat sealable glue-line is laid on the first conduction heat sealable glue-line, institute
The upper surface for stating the second conduction heat sealable glue-line is flushed with the top surface of the heat insulation type frame of plastic, is then removed from the molds, wherein
The material of the first resin seal glue-line is epoxy resin layer；The first heat-conducting type resin material is in percentage by weight
Calculating includes following components: 40 parts of PET resin, 30 parts of PBT resin, and 10 parts of PS resin, 8 parts of alumina powder, boron nitride powder 4
Part, 3 parts of alpha-silicon nitride powders, 5 parts of silicon carbide powder；The second heat-conducting type resin material calculate in percentage by weight include with
Lower component: 40 parts of PET resin, 30 parts of PBT resin, 10 parts of PS resin, 3 parts of alumina powder, 1 part of boron nitride powder, silicon carbide
2 parts of powder；
8) a certain amount of first heat insulation type resin material is injected in the heat insulation type frame of plastic, it is heat-insulated close to form first
The driving element, the first heat-insulating and sealing glue-line covering part is completely covered in adhesive layer, the first heat-insulating and sealing glue-line
First pin, the upper surface of the first heat-insulating and sealing glue-line flushes with the top surface of the heat insulation type frame of plastic,
The first heat insulation type resin material includes epoxy resin AB glue and alumina silicate powder, epoxy resin AB glue and aluminium silicate powder
In the range of the mass ratio at end is 15-25；
9) the second conduction heat sealable glue-line and the first conduction heat sealable glue-line of part are removed, in the power member
The top of part forms the first blind hole, then the first radiating block is closely embedded into first blind hole, so that the radiating block
Bottom surface and the power component top surface between the first conduction heat sealable glue-line with a thickness of 150 microns, the radiating block
Material be graphite；
10) the first resin seal glue-line of removal part and the metallic substrates, the heat insulation type of expose portion
Then the bottom surface of frame of plastic and the heat conduction silicone will inject one to form the second blind hole in the lower section in firstth area
The second quantitative heat insulation type resin material, to form the second heat-insulating and sealing glue-line, the bottom of the second heat-insulating and sealing glue-line
Face is flushed with the bottom surface of the metallic substrates, removes the first resin seal glue-line of part, again then with the exposed gold
Belong to the portion bottom surface of substrate；It includes following components: ABS resin that the second heat insulation type resin material is calculated in percentage by weight
40 parts, 30 parts of PET resin, 25 parts of polycarbonate, 5 parts of PMMA resin, 6 parts of glass fibre, 7 parts of alumina silicate powder, expanded pearlite
5 parts, 5 parts of magnesium silicate powders of rock powder end.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (9)
1. a kind of preparation method of semiconductor power device encapsulation, it is characterised in that: the following steps are included:
1) metallic substrates are provided, form first annular shrinkage pool in the edge of the lower surface of the metallic substrates；
2) heat conduction silicone is bonded in the upper surface of the metallic substrates；
3) in the heat conduction silicone deposition of insulative material to form an insulating layer；
4) it is formed on the insulating layer circuit-wiring layer；
5) the part insulating layer and the heat conduction silicone in the metallic substrates are removed, the second annular shrinkage pool, institute are formed
One heat insulation type frame of plastic is embedded into the described second annular shrinkage pool by the upper surface for stating the second annular shrinkage pool exposure metallic substrates
In, the circuit-wiring layer is divided into the firstth area and the secondth area, wherein region within the heat insulation type frame of plastic is described the
One area, the region other than the heat insulation type frame of plastic are secondth area；
6) driving element and corresponding first pin are assembled in the first area of the circuit-wiring layer, in the electricity
Power component and corresponding second pin are assembled in the second area of road wiring layer；
7) metallic substrates for being equipped with driving element, power component, the first pin and second pin are placed in mold, it is first
A certain amount of resin material is first injected, to form the first resin seal glue-line, the first resin seal glue-line is full of described the
One annular shrinkage pool, and the first resin seal glue-line only covers the lower end of the metallic substrates, is then poured into a certain amount of
First heat-conducting type resin material, to form the first conduction heat sealable glue-line, the first conduction heat sealable glue-line is laid on described first
On resin seal glue-line, the power component, and the first conduction heat sealable glue is completely covered in the first conduction heat sealable glue-line
First pin of layer covering part and the second pin；It is then injected into a certain amount of second heat-conducting type resin material, with
The second conduction heat sealable glue-line is formed, the second conduction heat sealable glue-line is laid on the first conduction heat sealable glue-line, and described
The upper surface of two conduction heat sealable glue-lines is flushed with the top surface of the heat insulation type frame of plastic, is then removed from the molds；
8) a certain amount of first heat insulation type resin material is injected, in the heat insulation type frame of plastic to form the first heat-insulating and sealing glue
The driving element, the institute of the first heat-insulating and sealing glue-line covering part is completely covered in layer, the first heat-insulating and sealing glue-line
The first pin is stated, the upper surface of the first heat-insulating and sealing glue-line is flushed with the top surface of the heat insulation type frame of plastic；
9) the second conduction heat sealable glue-line and the first conduction heat sealable glue-line for removing part, in the power component
Top forms the first blind hole, then the first radiating block is closely embedded into first blind hole, so that the bottom of the radiating block
The first conduction heat sealable glue-line between face and the top surface of the power component with a thickness of 80-150 microns；
10) the first resin seal glue-line of removal part and the metallic substrates, the heat-insulated plastic of expose portion
Then the bottom surface of frame and the heat conduction silicone will be injected a certain amount of with forming the second blind hole in the lower section in firstth area
The second heat insulation type resin material, to form the second heat-insulating and sealing glue-line, the bottom surface of the second heat-insulating and sealing glue-line with
The bottom surface of the metallic substrates flushes, and removes the first resin seal glue-line of part, again then with the exposed Metal Substrate
The portion bottom surface at bottom.
2. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 1
In, the material of the metal substrate is one of aluminium, copper and stainless steel, forms described the by wet etching or dry etching
One annular shrinkage pool, the depth of the first annular shrinkage pool are 0.5-1 millimeters.
3. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 3,
By PECVD deposited silicon nitride, boron nitride or silicon carbide to form the insulating layer, or pass through ALD method deposition of aluminium oxide
To form the insulating layer, the insulating layer with a thickness of 80-150 microns.
4. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 4
It is formed on the insulating layer the specific steps of circuit-wiring layer are as follows: bond copper foil on the insulating layer, and pass through etching work
Skill removes the copper foil of part, to form the circuit-wiring layer.
5. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 5
In, it includes following components that the material of the heat insulation type frame of plastic is calculated in percentage by weight: 20-40 parts of ABS resin, PET tree
30-40 parts of rouge, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fibre, 4-8 parts of alumina silicate powder, expansion
3-6 parts of perlite powder, 3-5 parts of magnesium silicate powders；It is provided on the first side of the heat insulation type frame of plastic and is worn for metal wire
The first shrinkage pool crossed is provided with for described first in the heat insulation type frame of plastic on the second side opposite with the first side
The second shrinkage pool that pin passes through.
6. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 7
In, the material of the first resin seal glue-line is epoxy resin layer；The first heat-conducting type resin material is according to weight percent
Include following components than calculating: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, alumina powder 5-8
Part, 4-6 parts of boron nitride powder, 3-6 parts of alpha-silicon nitride powders, 4-6 parts of silicon carbide powder；The second heat-conducting type resin material according to
It includes following components that weight percent, which calculates: 20-40 parts of PET resin, 20-30 parts of PBT resin, and 10-20 parts of PS resin, aluminium oxide
1-3 parts of powder, 1-3 parts of boron nitride powder, 1-2 parts of silicon carbide powder.
7. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 8
In, the first heat insulation type resin material includes epoxy resin AB glue and alumina silicate powder.
8. the preparation method of semiconductor power device encapsulation according to claim 1, it is characterised in that: in the step 9
In, the material of the radiating block is one of graphite, copper, aluminium；In the step 10, the second heat insulation type resin material
Calculate in percentage by weight includes following components: 20-40 parts of ABS resin, 30-40 parts of PET resin, and 15-25 parts of polycarbonate,
5-10 parts of PMMA resin, 5-10 parts of glass fibre, 4-8 parts of alumina silicate powder, 3-6 parts of perlite powder, magnesium silicate powders
3-5 parts.
9. a kind of semiconductor power device encapsulation, which is characterized in that prepare shape using the described in any item methods of claim 1-8
At.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110931368A (en) * | 2019-11-28 | 2020-03-27 | 徐州顺意半导体科技有限公司 | Semiconductor packaging structure and preparation method thereof |
| CN110943001A (en) * | 2019-11-28 | 2020-03-31 | 徐州顺意半导体科技有限公司 | Semiconductor device package and preparation method thereof |
| CN111106017A (en) * | 2019-11-28 | 2020-05-05 | 徐州顺意半导体科技有限公司 | Power module and preparation method thereof |
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| CN110931368A (en) * | 2019-11-28 | 2020-03-27 | 徐州顺意半导体科技有限公司 | Semiconductor packaging structure and preparation method thereof |
| CN110943001A (en) * | 2019-11-28 | 2020-03-31 | 徐州顺意半导体科技有限公司 | Semiconductor device package and preparation method thereof |
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