CN109285874A - A kind of array substrate and preparation method thereof, display device - Google Patents
A kind of array substrate and preparation method thereof, display device Download PDFInfo
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- CN109285874A CN109285874A CN201811406258.6A CN201811406258A CN109285874A CN 109285874 A CN109285874 A CN 109285874A CN 201811406258 A CN201811406258 A CN 201811406258A CN 109285874 A CN109285874 A CN 109285874A
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000004020 luminiscence type Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000003760 hair shine Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 239000011370 conductive nanoparticle Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 210000004209 hair Anatomy 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The embodiment of the present invention provides a kind of array substrate and preparation method thereof, display device, is related to field of display technology, is able to solve the problem of cannot effectively connecting between the electrode and auxiliary electrode in luminescence unit.The array substrate includes: the pixel defining layer being set to above pixel array, and the multiple luminescence units set are enclosed by pixel defining layer；Wherein, luminescence unit includes pixel electrode, luminescent layer, the cathode being sequentially arranged above positioned at pixel array；Array substrate further include: the auxiliary electrode on pixel array and positioned at pixel defining layer region；Array substrate is provided with through-hole above auxiliary electrode, and the extension of cathode and luminescent layer extends in through-hole；Array substrate is provided with conductive column in through-holes, and conductive column runs through the extension of luminescent layer, and auxiliary electrode is connect by the conductive column with the cathode.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of array substrate and preparation method thereof, display device.
Background technique
Organic Light Emitting Diode (Organic Light Emitting Diode, abbreviation OLED) display has certainly because of it
High colour gamut, the advantages that Flexible Displays can be achieved in luminous, frivolous, low in energy consumption, high contrast, has been widely used in including electricity
In various electronic equipments including the electronic products such as brain, mobile phone.
Wherein, OLED device is as a kind of electric current driving assembly, and when outside line is too long or meticulous, it will cause serious
Voltage gradient, and then cause display uneven；In the prior art, auxiliary electrode is generally increased by the electrode to OLED device,
Come reduce because route it is too long caused by voltage gradient, but between the electrode of OLED device and auxiliary electrode be easy because of OLED device
In luminous organic material and cannot effectively connect.
Summary of the invention
The embodiment of the present invention provides a kind of array substrate and preparation method thereof, display device, is able to solve luminescence unit
In electrode and auxiliary electrode between the problem of cannot effectively connecting.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
The embodiment of the present invention provides a kind of array substrate, including the pixel defining layer being set to above pixel array, and
The multiple luminescence units set are enclosed by the pixel defining layer；Wherein, the luminescence unit includes being located above pixel array successively
Pixel electrode, luminescent layer, the cathode of setting；The array substrate further include: be located on the pixel array and be located at the picture
Element defines the auxiliary electrode of layer region；The array substrate is provided with through-hole above the auxiliary electrode, the cathode and
The extension of the luminescent layer extends in the through-hole；The array substrate is provided with conductive column, and institute in the through hole
The extension that conductive column runs through the luminescent layer is stated, the auxiliary electrode is connect by the conductive column with the cathode.
In some embodiments, the top of the conductive column be higher than the luminescent layer extension top and with the yin
Pole contact.
In some embodiments, the top of the conductive column be higher than the luminescent layer extension top 10nm~
100nm。
In some embodiments, the material of the conductive column includes conductive nano-particles.
In some embodiments, the conductive column be cylindrical structure, a diameter of 1 μm~8 μm.
In some embodiments, the height of the conductive column is 100nm~500nm.
In some embodiments, the luminescence unit is Organic Light Emitting Diode unit.
The embodiment of the present invention also provides a kind of production method of array substrate, comprising: in the base for being formed with pixel array
Auxiliary electrode is formed on plate；Pixel electrode, pixel defining layer are sequentially formed on the substrate for being formed with the auxiliary electrode；Its
In, the pixel defining layer is provided with through-hole in the region for being provided with the auxiliary electrode, to expose the corresponding lead to the hole site
The auxiliary electrode at place；Conductive column is formed in the through-hole；Luminescent layer is formed on the substrate for being formed with the conductive column,
Wherein, the extension of the luminescent layer extends in the through-hole, and the conductive column runs through the extension of the luminescent layer；Institute
The top for stating the extension of luminescent layer is not higher than the top of the conductive column；Yin is formed on the substrate for being formed with the luminescent layer
Pole, and the cathode covers the top of the conductive column.
In some embodiments, the conductive column that formed in the through-hole includes: to be beaten in the through-hole using ink-jet
Print technique carries out simultaneously with drying process, forms conductive column.
The embodiment of the present invention also provides a kind of display device, including array substrate above-mentioned.
The embodiment of the present invention provides a kind of array substrate and preparation method thereof, display device, which includes: setting
Pixel defining layer above pixel array, and the multiple luminescence units set are enclosed by pixel defining layer；Wherein, luminescence unit packet
It includes and is located at pixel electrode, luminescent layer, cathode that pixel array is sequentially arranged above；Array substrate further include: be located at pixel array
Auxiliary electrode that is upper and being located at pixel defining layer region；Array substrate is provided with through-hole, cathode and hair above auxiliary electrode
The extension of photosphere extends in through-hole；Array substrate is provided with conductive column, and conductive column prolonging through luminescent layer in through-holes
Extending portion, auxiliary electrode are connect by the conductive column with the cathode.
In conclusion by the way that conductive column is arranged in through-hole, and the conductive column runs through luminescent layer in through-hole in the present invention
Extension, cathode is connect by the conductive column with auxiliary electrode, so as to avoid the isolation because of luminescent layer, is caused
The drawbacks of cannot effectively being connected between cathode and auxiliary electrode.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of the array substrate provided in the related technology；
Fig. 2 is a kind of structural schematic diagram of the array substrate provided in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another array substrate provided in the embodiment of the present invention；
Fig. 4 is a kind of production flow diagram of the array substrate provided in the embodiment of the present invention；
Fig. 5 a is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention；
Fig. 5 b is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention；
Fig. 5 c is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention；
Fig. 5 d is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention；
Fig. 5 e is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention；
Fig. 5 f is one of the schematic diagram in a kind of manufacturing process of the array substrate provided in the embodiment of the present invention.
Appended drawing reference:
01- array substrate；10- pixel array；20- auxiliary electrode；30- conductive column；100- luminescent layer；101- pixel electricity
Pole；102- cathode；U- luminescence unit；PLN- flatness layer；B- barricade；PDL- pixel defining layer；H- through-hole；S- extension.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Unless otherwise defined, technical term or scientific term used in the embodiment of the present invention are should be belonging to the present invention
The ordinary meaning that personage in field with general technical ability is understood." first ", " second " used in the embodiment of the present invention with
And similar word is not offered as any sequence, quantity or importance, and be used only to distinguish different component parts." packet
Including " element or object that either the similar word such as "comprising" means to occur before the word cover and appear in the word presented hereinafter
Element perhaps object and its equivalent and be not excluded for other elements or object.The similar word such as " connection " or " connected "
It is not limited to physics or mechanical connection, but may include electrical connection, it is either direct or indirect.
"upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, after the absolute position for being described object changes, then should
Relative positional relationship may also correspondingly change.
The embodiment of the present invention provides a kind of array substrate in the related technology, as shown in Figure 1, including in the array substrate 01
It is set to the pixel defining layer PDL of the top of pixel array 10, and is enclosed and set by the barricade B (Bank) in pixel defining layer PDL
Multiple luminescence unit U；Luminescence unit U includes: pixel electrode 101, the luminescent layer being sequentially arranged above positioned at pixel array 10
100, cathode 102.
Wherein it is possible to understand, pixel defining layer PDL is made of the staggered barricade B of transverse and longitudinal, and by barricade B come boundary
Determine the specific location of each luminescence unit U, the section for depicting a barricade B in pixel defining layer PDL only illustrated in Fig. 1
Figure.In addition, pixel array 10 includes the pixel-driving circuit array being arranged on underlay substrate.
In some embodiments, above-mentioned luminescence unit U can be Organic Light Emitting Diode (OLED) unit, and pixel is electric
Pole 101 is the single electrode for the setting of single OLED device, and cathode 102 is to tie for all the integrated of OLED device setting
The plane-shape electrode (namely public electrode) of structure.Following embodiment is as example, and the present invention is described further.
In practice, in order to avoid because outside line it is meticulous too long, cause to cause between cathode 102 and external circuit serious
Voltage gradient, and then adverse effect is caused to display, therefore, as shown in Figure 1, being located at pixel by array substrate 01
Between array 10 and luminescence unit U, respective pixel define layer region PDL and be provided with auxiliary electrode 20, by by cathode 102 with it is auxiliary
Electrode 20 is helped to be electrically connected, to 102 input signal of cathode, to generate on cathode 102 to reduce by auxiliary electrode 20
Voltage gradient, and then increase the luminous efficiency of luminescence unit.
For the connection type of cathode 102 and auxiliary electrode 20, as shown in Figure 1, in order not to be impacted to display,
Through-hole H generally is set in the top of auxiliary electrode 20, cathode 102 is connect by through-hole H with auxiliary electrode 20.
It is, of course, understood that in order to guarantee that the electric signal that is normally carried out of pixel electrode 101 and auxiliary electrode 20 passes
It is defeated, the general flatness layer PLN that insulation can be provided in pixel electrode 101 and auxiliary electrode 20, therefore, for above-mentioned auxiliary electricity
For the top setting through-hole H of pole 20, it is generally set to the pixel defining layer PDL and flatness layer of 20 top of auxiliary electrode
Through-hole on PLN.
In addition, due to the formation of above-mentioned through-hole H, in OLED device before luminescent layer 100, so that shining being formed
When layer 100, the extension S of the luminescent layer 100 can be filled in through-hole H, and then be caused in through-hole, the extension meeting of luminescent layer
Completely cut off effective connection (Fig. 1 can be referred to) between cathode and auxiliary electrode.
It is understood that the extension of luminescent layer itself being located in through-hole H does not have luminous condition, it can not be into
Row shines, and is only inevitably formed in through-hole H in production.
On this basis, the embodiment of the present invention provide it is a kind of can be avoided the aforementioned isolation because of luminescent layer extension S, cause
The array substrate that cannot be effectively connected between cathode 102 and auxiliary electrode 20；As shown in Fig. 2, the array substrate 01 is in through-hole H
It is provided with the conductive column 30 of the extension S through luminescent layer, so that cathode 102 is connected by conductive column 30 and auxiliary electrode 20
It connects.
Wherein, it should be noted that " be provided in through-hole H the conductive column of the extension S through luminescent layer for above-mentioned
For 30 ", it is to be understood that the thickness for certainly existing luminescent layer 100 is less than or equal to the height of conductive column 30, specifically sets
Setting structure can be such that
In some embodiments, as shown in Figure 2, in through-hole H, conductive column 30 deviates from the top of 10 side of pixel array
It is concordant away from the top of 10 side of pixel array with the extension S of luminescent layer 102.
In further embodiments, as shown in Figure 3, in through-hole H, conductive column 30 deviates from the top of 10 side of pixel array
The extension S that portion is higher than luminescent layer 102 deviates from the top of 10 side of pixel array.
Signal, in some embodiments, conductive column 30 is higher than luminescent layer 102 away from the top of 10 side of pixel array
Distance D of the extension S away from the top of 10 side of pixel array can be 10nm~100nm.
Certainly, in practice, in order to guarantee effective connection of cathode 102 Yu auxiliary electrode 20 as far as possible, it is generally preferable to,
As shown in Figure 3, in through-hole H, conductive column 30 is higher than the extension S of luminescent layer 102 away from the top of 10 side of pixel array
Away from the top of 10 side of pixel array.
In addition, in some embodiments, it can be as shown in Figure 2 or Figure 3, conductive column 30 and cathode 102, auxiliary electrode 20 are straight
Contact, so that the two is attached；In further embodiments, conductive column 30 can also pass through other conductive connection parts
It is indirectly connected with cathode 102 and/or auxiliary electrode 20；Which is not limited by the present invention, in practice can be according to specific array
Type of substrate, the connection type of selection setting conductive column 30 and cathode 102, auxiliary electrode 20.Certainly, for conventional array base
Plate, it is generally preferable to, as shown in Figure 2 or Figure 3, the company that conductive column 30 is directly contacted with cathode 102, auxiliary electrode 20 can be set
Connect mode.
It should be noted that "and/or", only a kind of incidence relation for describing affiliated partner, indicates may exist three
Kind relationship, for example, M and/or N, can indicate: individualism M exists simultaneously M and N, these three situations of individualism N.In addition,
Character "/" herein, typicallys represent the relationship that forward-backward correlation object is a kind of "or".
In conclusion by the way that conductive column 30 in through-hole H, is arranged, and the conductive column 30 runs through luminescent layer in the present invention
100 extension enables cathode 102 to connect by the conductive column 30 with auxiliary electrode 20, so as to avoid because of luminescent layer
Isolation, lead to the drawbacks of cannot effectively connecting between cathode 102 and auxiliary electrode 20.
In addition, connect cathode 102 with auxiliary electrode 20 by the way that conductive column 30 is arranged in through-hole H in the present invention, thus
It (generally can remove the luminescent layer 100 in through-hole H to need using laser ablation work without removing the luminescent layer 100 in through-hole H
Skill, higher cost) under the premise of, it can also reach effective connection of cathode 102 Yu auxiliary electrode 20.
In some embodiments, the material of above-mentioned conductive column 30 includes conductive nano-particles；Specifically, since technique needs
It asks, in practice, InkJet printing processes is mostly used to form above-mentioned conductive column 30, and in marking ink when use InkJet printing processes
Solute generally use conductive nano-particles, to form the conductive column 30 that is mainly made of conductive nano-particles.
Signal, above-mentioned conductive nano-particles can be metal nanoparticle, or ITO (tin indium oxide) nanometer
Grain can also be IZO (indium zinc oxide) nano particle etc., and the present invention is not specifically limited in this embodiment.
It can be cylindrical structure in addition, the present invention, which is done, not to be limited for the concrete shape of above-mentioned conductive column 30, it can also be with
For triangular prism structure, it can also be tetragonous rod structure etc., can according to need selection setting in practice.
In some embodiments, can be set the conductive column 30 be cylindrical structure, a diameter of 1 μm~8 μm.
In some embodiments, the height of above-mentioned conductive column 30 can be 100nm~500nm；Such as can for 100nm,
400nm etc. specifically can carry out selection setting according to the thickness of luminescent layer, as long as guaranteeing that conductive column can penetrate through prolonging for luminescent layer
Extending portion.
Specifically, being greater than 100nm by the height of setting conductive column 30, to guarantee that conductive column 30 can effectively penetrate through hair
The extension of photosphere；Height by the way that conductive column 30 is arranged is less than 500nm, guarantees effective between cathode 102 and conductive column 30
Connection, avoids the distance for being higher by the surface of the extension of luminescent layer because of conductive column 30 excessive, may cause cathode in conductive column 30
Position the drawbacks of being broken.
For example, in some embodiments, for monochromatic OLED device (only including a luminescent layer), can be set
The height of conductive column 30 is 100nm or 150nm；In further embodiments, for the OLED device of white light (including multiple hairs
Photosphere) for, the height that conductive column 30 can be set is 350nm or 400nm.
The embodiment of the present invention also provides a kind of production method of array substrate, as shown in figure 4, the production method includes:
Step S101, with reference to Fig. 5 a, auxiliary electrode 20 is formed on the substrate for being formed with pixel array 10.
It is understood that in order to guarantee that pixel electrode 101 and the auxiliary electrode 20 being subsequently formed can be normally carried out electricity
Signal transmission, with reference to Fig. 5 b, the general flatness layer PLN that insulation can be made in pixel electrode 101 and auxiliary electrode 20, and
The position of barricade B in the corresponding pixel defining layer PDL being subsequently formed flatness layer PLN is formed with through-hole.
Step S102, with reference to Fig. 5 c, pixel electrode 101, pixel are sequentially formed on the substrate for being formed with auxiliary electrode 20
Define a layer PDL；Wherein, pixel defining layer PDL is provided with through-hole H in the region for being provided with auxiliary electrode 20, to expose correspondence
Auxiliary electrode 20 at the position through-hole H.
It is understood that being also formed with the feelings of the flatness layer PLN of insulation on the above-mentioned substrate for being formed with auxiliary electrode 20
Under condition, with reference to Fig. 5 b and Fig. 5 c, above-mentioned through-hole H is the through-hole through flatness layer PLN and pixel defining layer PDL, to expose pair
It should auxiliary electrode 20 at the position through-hole H.
Step S103, with reference to Fig. 5 d, conductive column 30 is formed in through-hole H.
In the case, conductive column 30 is directly connect with auxiliary electrode 20 in through-hole.
Step S104, with reference to Fig. 5 e or Fig. 5 f, luminescent layer 100 is formed on the substrate for being formed with conductive column 30, wherein hair
The extension S of photosphere is extended in through-hole H, and conductive column 30 runs through the extension S of luminescent layer, and the extension S of luminescent layer
Top is not higher than the top of conductive column 30.
In the case, in actual manufacture craft, by controlling technological design, to guarantee the thickness of luminescent layer 100
Less than or equal to the height of conductive column 30, to reach conductive column 30 in through-hole H, the top of the extension S of luminescent layer is not high
In the top of conductive column 30；Namely ensure that the top of conductive column 30 is not completely covered by the extension S of luminescent layer, with naked
The part of dew.
Step S105, with reference to Fig. 2 or Fig. 3, cathode 102, and cathode 102 are formed on the substrate for being formed with luminescent layer 100
Cover the top of conductive column 30.
In the case, cathode 102 is by the exposed surface covering of conductive column 30 namely cathode 102 in through-hole and conductive
Column 30 is directly connected to, so that cathode 102 is connect by conductive column 30 with auxiliary electrode 20.
Wherein, the pixel electrode 101 that sets gradually, cathode 102 and luminescent layer 100 between the two form shine it is single
First U.Luminescence unit U can be Organic Light Emitting Diode unit.
So, the cathode of above-mentioned formation directly passes through in through-hole and connects through the conductive column of luminescent layer and auxiliary electrode
It connects, so as to avoid the isolation because of luminescent layer, leads to the drawbacks of cannot effectively connecting between cathode and auxiliary electrode.
Further, in above-mentioned steps S104, forming conductive column 30 in through-hole H may include:
It in through-hole H, is carried out simultaneously using InkJet printing processes with drying process, forms conductive column 30.
Specifically, the demand based on InkJet printing processes is mostly used and is led when generally forming conductive column 30 using printing technology
Nanoparticles；And in order to avoid the conductive column of formation 30 is excessively thick (namely the circumscribed circle of cross section be relatively large in diameter), cause
When being subsequently formed luminescent layer 100, the extension S of luminescent layer 100 may cover the surface of conductive column 30, cause cathode 102 with
Conductive column 30 cannot be connected effectively.It is currently preferred, while using InkJet printing processes, technique is dried, with shape
At thinner conductive column 30.
Signal, the external diameter of a circle of the cross section of the conductive column 30 of formation is 1 μm~8 μm.Specifically, in the conduction
In the case that column 30 is cylindrical body, the diameter of the conductive column 30 is 1 μm~8 μm；For example, it may be 5 μm.
Certainly, for related contents other in the production method, corresponding aforementioned array substrate embodiment can be referred to
In corresponding part, details are not described herein again；For other setting structures in aforementioned array substrate embodiment, can refer to above-mentioned
The corresponding preparation of production method, adjusts corresponding making step, no longer repeats one by one herein.
The embodiment of the present invention also provides a kind of display device, including array substrate above-mentioned, has and mentions with previous embodiment
The identical structure of the array substrate of confession and beneficial effect.Since previous embodiment is to the structure of array substrate and beneficial effect
It is described in detail, details are not described herein again.
It should be noted that in embodiments of the present invention, display device specifically at least may include Organic Light Emitting Diode
Display panel, such as the display panel can be applied to any tool such as display, TV, Digital Frame, mobile phone or tablet computer
Have in the product or component of display function.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of array substrate is enclosed including the pixel defining layer being set to above pixel array, and by the pixel defining layer
If multiple luminescence units；Wherein, the luminescence unit includes the pixel electrode being sequentially arranged above positioned at pixel array, shines
Layer, cathode；It is characterized in that, the array substrate further include: be located on the pixel array and be located at the pixel defining layer
The auxiliary electrode in region；
The array substrate is provided with through-hole above the auxiliary electrode, and the extension of the cathode and the luminescent layer prolongs
It extends in the through-hole；
The array substrate is provided with conductive column in the through hole, and the conductive column runs through the extension of the luminescent layer,
The auxiliary electrode is connect by the conductive column with the cathode.
2. array substrate according to claim 1, which is characterized in that the top of the conductive column is higher than the luminescent layer
The top of extension and with the cathode contacts.
3. array substrate according to claim 2, which is characterized in that the top of the conductive column is higher than the luminescent layer
Top 10nm~100nm of extension.
4. array substrate according to claim 1, which is characterized in that the material of the conductive column includes electrical-conductive nanometer
Grain.
5. array substrate according to claim 1, which is characterized in that the conductive column be cylindrical structure, a diameter of 1 μm
~8 μm.
6. array substrate according to claim 1, which is characterized in that the height of the conductive column is 100nm~500nm.
7. array substrate according to claim 1-6, which is characterized in that the luminescence unit is organic light emission two
Pole pipe unit.
8. a kind of production method of array substrate characterized by comprising
Auxiliary electrode is formed on the substrate for be formed with pixel array；
Pixel electrode, pixel defining layer are sequentially formed on the substrate for being formed with the auxiliary electrode；Wherein, the pixel defines
Layer is provided with through-hole in the region for being provided with the auxiliary electrode, to expose the auxiliary electricity at the corresponding lead to the hole site
Pole；
Conductive column is formed in the through-hole；
Luminescent layer is formed on the substrate for being formed with the conductive column, wherein the extension of the luminescent layer extends to described logical
Kong Zhong, and the conductive column runs through the extension of the luminescent layer；It is led not higher than described at the top of the extension of the luminescent layer
The top of electric column；
Cathode is formed on the substrate for being formed with the luminescent layer, and the cathode covers the top of the conductive column.
9. the production method of array substrate according to claim 8, which is characterized in that described formed in the through-hole is led
Electric column includes:
It in the through-hole, is carried out simultaneously using InkJet printing processes with drying process, forms conductive column.
10. a kind of display device, which is characterized in that including the described in any item array substrates of claim 1-7.
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| CN201811406258.6A CN109285874A (en) | 2018-11-23 | 2018-11-23 | A kind of array substrate and preparation method thereof, display device |
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| CN201811406258.6A CN109285874A (en) | 2018-11-23 | 2018-11-23 | A kind of array substrate and preparation method thereof, display device |
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| CN201811406258.6A Pending CN109285874A (en) | 2018-11-23 | 2018-11-23 | A kind of array substrate and preparation method thereof, display device |
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Cited By (2)
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| CN110299390A (en) * | 2019-06-26 | 2019-10-01 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110224005A (en) * | 2019-05-10 | 2019-09-10 | 深圳市华星光电半导体显示技术有限公司 | Display and preparation method thereof |
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| WO2020258903A1 (en) * | 2019-06-26 | 2020-12-30 | 云谷（固安）科技有限公司 | Display panel and display device |
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