CN109282169B - Wavelength conversion device, light source comprising same and projection device - Google Patents
Wavelength conversion device, light source comprising same and projection device Download PDFInfo
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- CN109282169B CN109282169B CN201710600503.6A CN201710600503A CN109282169B CN 109282169 B CN109282169 B CN 109282169B CN 201710600503 A CN201710600503 A CN 201710600503A CN 109282169 B CN109282169 B CN 109282169B
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- wavelength conversion
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Projection Apparatus (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The invention relates to a wavelength conversion device, a light source comprising the same and a projection device, wherein the wavelength conversion device comprises a light emitting layer, a reflecting layer and a substrate which are sequentially laminated, and is characterized in that the light emitting layer comprises first glass powder and a fluorescent powder material, wherein the fluorescent powder material is encapsulated by the first glass powder to form a layer, and the particle size D50 of the fluorescent powder material is 5-20 mu m. According to the wavelength conversion device, the particle sizes of the fluorescent powder material, the reflecting particles and the encapsulating agent are preferably controlled, so that the stacking filling rate of the fluorescent powder particles in the light emitting layer and the reflecting particles in the reflecting layer is higher under the condition that the wavelength conversion device ensures high bonding yield, the light emitting layer has higher light conversion efficiency, the reflecting layer has higher average reflectivity, and the wavelength conversion device can still keep higher efficiency and reliability under high excitation light power density.
Description
Technical Field
The invention relates to a wavelength conversion device, a light source comprising the same and a projection device.
Background
At present, the main application forms of semiconductor light sources are traditional LED light sources and emerging laser light sources, and in the field of display with high brightness requirements, the traditional LED light source technology cannot meet the requirements of high brightness and high power. The technology is increasingly applied to the field of illumination and display, has the advantages of high efficiency, low energy consumption, low cost and long service life, and is an ideal alternative scheme of the existing white light or monochromatic light.
In the laser light source, a technology of remotely exciting a rotating fluorescent color wheel by laser is generally adopted. For example, blue laser emitted by an excitation light source is collected and focused on a rotating disc with a surface being a fluorescent powder sheet, the fluorescent powder material is excited to emit light, the rotating disc is driven by a motor to rotate at a high speed, the excited area of the fluorescent powder sheet is changed continuously but the position of a light spot is not changed, and a color light sequence with periodic time sequence can be generated along with the rotation of the rotating disc. The excitation modes are divided into two types, reflection excitation and transmission excitation. In practical application, in order to obtain the exciting light with the highest luminous efficiency and higher utilization rate, reflection type excitation is often adopted. The wavelength conversion device of the laser light source usually utilizes a silica gel packaging technology developed from an LED light source technology, that is, silica gel mixed with fluorescent powder is used and then coated on a disc-shaped metal substrate to obtain a fluorescent powder packaging light emitting layer which can be used for rotation. However, when irradiated with laser light having a much higher power density than LEDs, the large amount of heat generated during laser irradiation has a significant effect on the performance of the light-emitting layer of the wavelength conversion device.
Therefore, in view of the above-mentioned key problems occurring in the application of high power laser light source, it is necessary to provide a wavelength conversion device with better reliability and higher conversion efficiency.
Disclosure of Invention
In view of the above circumstances, an object of the present invention is to provide a wavelength conversion device having higher reliability and higher conversion efficiency, and a light source and a projection device including the same.
In one aspect, the present invention provides a wavelength conversion device comprising a light emitting layer, a reflective layer and a substrate, which are sequentially stacked, wherein the light emitting layer comprises a first glass frit and a phosphor material, wherein the phosphor material is encapsulated by the first glass frit into a layer, and the phosphor material has a particle diameter D50 of 5 to 20 μm.
Preferably, in the wavelength conversion device according to the present invention, the substrate is a ceramic substrate, and the substrate (103) is made of a ceramic material or a single crystal inorganic material; the shape of the substrate (103) is selected from a disc shape or a circular ring shape.
Preferably, for the wavelength conversion device of the present invention, the phosphor material is selected from yellow phosphor and/or green phosphor and/or red phosphor; wherein the particle size D50 of the yellow fluorescent powder is 8-17 μm; wherein the particle size D50 of the green fluorescent powder is 15-16 μm; wherein the particle size D50 of the red fluorescent powder is 10-17 μm.
Preferably, in the above wavelength conversion device of the present invention, the reflective layer includes a second glass frit and reflective particles, wherein the reflective particles are encapsulated by the second glass frit to form a layer, and a particle diameter D50 of the reflective particles is 0.02 to 3 μm.
Preferably, in the wavelength conversion device according to the present invention, the reflective layer and the light-emitting layer each independently have a circular ring shape or a part of a circular ring shape; wherein the reflective layer and the light emitting layer have the same shape.
Preferably, for the above wavelength conversion device of the present invention, the first glass frit and the second glass frit are of the same type; the particle size D50 of the first glass powder is 3.1-3.5 μm; the particle size D50 of the second glass powder is 0.5-1 μm.
Further preferably, in the wavelength conversion device according to the present invention, the wavelength conversion device further includes a second substrate disposed below the substrate; the second substrate is selected from a copper substrate, an aluminum substrate, a ceramic substrate and an aluminum nitride single crystal substrate.
In another aspect, the present invention provides a light source comprising a wavelength conversion device according to the present invention.
In yet another aspect, the present invention provides a projection device comprising a wavelength conversion device according to the present invention.
According to the wavelength conversion device, the fluorescent powder material in the wavelength conversion device is controlled, and the particle sizes of the reflective particles and the encapsulating agent are preferably controlled, so that the wavelength conversion device has higher stacking filling rate of the fluorescent powder particles in the light emitting layer and the reflective particles in the reflective layer under the condition of ensuring high bonding yield, the light emitting layer has higher light conversion efficiency, the reflective layer has higher average reflectivity, and the wavelength conversion device can still keep higher efficiency and reliability under high excitation light power density.
Drawings
Fig. 1 is a side view and a top view of the configuration of a wavelength conversion device according to an embodiment of the present invention.
Fig. 2 is a side view of a first variation of a wavelength conversion device according to an embodiment of the present invention.
Fig. 3 is a side view of a second variation of a wavelength conversion device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the scope of the present invention is not limited thereto.
In the present application, unless otherwise specified, the term "D50" denotes the size of the particle size at which the cumulative distribution of particle sizes of a sample of particles reaches 50%.
First, the configuration of a wavelength conversion device according to an embodiment of the present invention is explained with reference to fig. 1. As shown in fig. 1, the wavelength conversion device includes a light emitting layer 101, a reflective layer 102, and a substrate 103, which are sequentially stacked. The material for preparing the substrate 103 may be a ceramic material or a single crystal-based inorganic material. The substrate 103 may have any shape, and preferably, the shape of the substrate 103 may be a disk shape, a circular ring shape, or a part of a circular ring shape (e.g., a semicircular ring shape). The reflective layer 102 is attached on the substrate 103 to use the reflective layer 102 for reflecting the excitation light remaining through the light emitting layer 101 and the stimulated light converted by the light emitting layer 101, and may have a circular shape or a part of a circular shape (e.g., a semicircular shape). In addition, a light emitting layer 101, which is in the shape of a circular ring or a part of a circular ring (e.g., a semicircular ring), is attached on the reflective layer 102 for emitting visible light having a wavelength different from that of the excitation light under excitation of the excitation light. The three-layer structure described above can be obtained by sintering at a temperature of 750 ℃ to 950 ℃, preferably 850 ℃.
Next, the three-layer structure described above, i.e., the light-emitting layer 101, the reflective layer 102, and the substrate 103 will be described in detail.
The light emitting layer 101 includes a first glass frit and a phosphor material, wherein the phosphor material is encapsulated in a layer by the first glass frit as an encapsulant to form the light emitting layer 101. The light-emitting layer 101 functions to receive irradiation of excitation light (e.g., blue laser light) and excite the phosphor material in the light-emitting layer to generate visible light of other wavelengths. The shape of the light emitting layer 101 is generally a circular ring or a part of a circular ring (e.g., a semicircular ring). Generally, the width of the light emitting layer 101 is the same as or slightly wider than the width of the reflective layer 102.
The phosphor material mainly adopts yellow phosphor, such as YAG: Ce3+Fluorescent powder; and green phosphors, e.g. LuAG: Ce3+And (3) fluorescent powder. In addition, red phosphors such as Sialon orange powder and CaAlSiN may also be used3:Eu2+Red-like powder and the like. The particle size D50 of the phosphor can be 5-20 μm, preferably 8-17 μm. For example, when a yellow phosphor is used, the particle size D50 of the phosphor is 8 to 17 μm, preferably 8 μm, 15 μm, and 17 μm; when the green phosphor is used, the particle size D50 of the phosphor is 15-16 μm, preferably 15 μm and 16 μm; when a red phosphor is used, the particle size D50 of the phosphor is 10-17 μm, preferably 10 μm, 15 μm and 17 μm.
The shape of the fluorescent powder material can be spherical, ellipsoidal or polygonal with round edges; the phosphor material may also be selected to be polygonal or irregular with sharp edges. When the luminescent layer is manufactured, one kind of fluorescent powder material can be selected, or two different kinds of fluorescent powder materials can be selected and mixed to manufacture the luminescent layer, for example, (1) in order to adjust the excited color of the luminescent layer or reduce the content of the high-calorific-value fluorescent powder material, the fluorescent powder materials with different colors are mixed, such as short-wavelength yellow fluorescent powder and long-wavelength yellow fluorescent powder, and the particle size D50 of the fluorescent powder is determined according to the particle size range; or (2) in order to improve the filling rate, the luminous efficiency and the thermal stability, fluorescent powders with different particle sizes (such as yellow fluorescent powder with the particle size D50 of 17 μm and yellow fluorescent powder with the particle size D50 of 8 μm) are mixed together, so that the content of fluorescent powder particles in the luminous layer is increased.
The first glass (also referred to as "bonding medium"; hereinafter referred to as first glass frit) used to encapsulate the phosphor material may optionally be a silicate glass frit SiO2-B2O3-RO, wherein R is one or more selected from Al, Mg, Ca, Sr, Ba, Na, KAnd (4) a plurality of. Preferably, the particle size D50 of the first glass frit is 3.1 to 3.5 μm. In addition, in addition to the above silicate glass frit, as the first glass frit, one or more of lead silicate glass frit having different softening points, aluminoborosilicate glass frit, aluminate glass frit, soda-lime glass frit, and quartz glass frit may be selected.
The thickness of the light-emitting layer 101 may be typically 120-200 μm.
The reflective layer 102 is located between the light emitting layer 101 and the substrate 103. The reflective layer 102 functions to reflect the remaining excitation light (e.g., excitation blue light) transmitted through the light emitting layer 101 and to reflect the excited light converted by the light emitting layer 101. Wherein the reflective layer 102 comprises a second glass frit and reflective particles, wherein the reflective particles are encapsulated by the second glass frit as an encapsulant, and the reflective particles have a particle diameter D50 of 0.02 to 3 μm, preferably 0.02 to 2 μm, more preferably 0.05 to 0.5 μm. The reflective layer 102 is formed by encapsulating reflective particles having a small particle diameter into a sheet shape using second glass (hereinafter referred to as second glass frit) as a bonding medium, the shape of the reflective layer 102 is generally the same as the shape of the light-emitting layer 101, the width of the reflective layer 102 is generally the same as or slightly smaller than the width of the light-emitting layer 101, and the reflective layer 102 is attached to the outer side of the surface of the substrate 103.
The reflecting particles are white inorganic powder with high refractive index, and mainly comprise powdery alumina and titanium oxide particles. Preferably, the refractive index of the alumina particles is 1.65-1.76, the particle diameter D50 can be 0.1-0.5 μm, the shape is mainly spherical, and the alumina particles can also be polyhedral or flaky; the refractive index of the titanium oxide particles is 2.1 to 2.56, and the particle diameter D50 may be 0.1 to 3 μm, preferably 0.5 to 2 μm.
The second glass frit may also be selected from the silicate glass frit SiO described above2-B2O3RO or other lead silicate glass frits, aluminoborosilicate glass frits, aluminate glass frits, soda lime glass frits and quartz glass frits with different softening points. The second glass powder can be the same type of glass powder and/or the same particle size D50 as the first glass powder, or the second glass powder can be the same type of glass powder and the particle size D50 is smallerThe smaller glass powder can help the adhesion between the reflecting layer and the light-emitting layer during sintering, and the reliability of the wavelength conversion device is improved. The particle size D50 of the second glass frit is preferably 0.5 to 1 μm. In addition, other types of glass powder can be used as long as the conditions of the thermal expansion coefficient close to that of the substrate, high light transmittance, good sintering performance and the like are met.
The thickness of the substrate 103 may be 1-1.5mm, the thermal conductivity is 150 or more, and the shape of the substrate may be a disk shape, a circular shape, a part of a circular shape, or the like. Aluminum nitride substrates, aluminum oxide single crystal (sapphire) substrates, silicon carbide substrates, silicon nitride substrates, and the like can be used as long as the requirements of high temperature treatment and high thermal conductivity are satisfied.
Although the configuration of the wavelength conversion device according to the embodiment of the present invention has been exemplarily described above with reference to fig. 1, the configuration of the wavelength conversion device of the present invention is not limited thereto, and may have other configurations.
For example, as shown in fig. 2 and 3, another substrate 104 may be introduced and the substrate 104 may be connected with the substrate 103. For example, after the three-layer structure (light-emitting layer 101, reflective layer 102, and substrate 103) is prepared by sintering, it is placed on substrate 104 by low-temperature processing such as bonding or soldering. The substrate 104 may be a copper substrate, an aluminum substrate, a ceramic substrate, or other substrates with heat dissipation effects, so as to provide some additional performance for the light emitting device; but may also be a single crystal type substrate of alumina (sapphire), aluminum nitride, etc. to provide some additional effects of beam penetration or coating, etc. In this case, the shape of the substrate 103 may be a disk shape as shown in fig. 2 or a circular ring shape as shown in fig. 3.
Furthermore, the invention relates to a light source comprising a wavelength conversion device according to the invention.
In addition, the invention also relates to a projection device, which comprises the wavelength conversion device.
Furthermore, the invention relates to a lighting device comprising a wavelength conversion device according to the invention.
The light source can be applied to laser education projectors, laser televisions, laser engineering projectors, cinema projectors, laser DLP spliced walls and the like.
Examples
Next, the composition and structure of an exemplary wavelength conversion device of the present invention will be explained by the following preparation examples.
The present inventors have found in their studies that, for wavelength conversion devices, the particle size of the phosphor material in the light emitting layer affects the light emitting efficiency and yield (reliability). When the particle size of the phosphor material is in a specific range (5-20 μm), better luminous efficiency can be realized while better yield is ensured compared with a phosphor material with a smaller particle size (<5 μm); not only is a better yield, which is the ratio of samples with satisfactory reliability to the total amount of samples in the prepared wavelength conversion device samples, achieved, but also a better luminous efficiency, compared to phosphor materials with larger particle sizes (>20 μm).
In addition, the present inventors have also found that, for wavelength conversion devices, the particle size of the reflective particles in the reflective layer further affects the average reflectance. When the particle diameter of the reflective particles is within a specific range (0.02 to 3 μm), a higher average reflectance (91% or more) can be exhibited than that of reflective particles having a larger particle diameter (>3 μm). As shown in table 2 below, when the particle diameter of the emitting particles is greater than 3 μm, the present inventors found that a large decrease in reflectance occurs due to the defect that an adhesive needs to be increased in order to obtain the same filling ratio.
As shown in tables 1 and 2 below, wavelength conversion devices fabricated using different phosphor material particle sizes and reflective particle sizes exhibited different yields, luminous efficiencies, and reflectances. The inventor firstly discovers the relationship between the particle size of the fluorescent powder material and the particle size of the reflecting particles and the yield, the luminous efficiency and the reflectivity.
TABLE 1 luminescence efficiency and yield for phosphor materials of different particle sizes
As can be seen from the above table, in order to satisfy the requirements for obtaining good luminous efficiency (above 172 Lm/W) and yield (above 80%) at the same time, it is necessary to prepare a wavelength conversion device using a phosphor material having a particle diameter (5-20 μm) falling within the range of the present invention. When the particle size of the phosphor material is increased to 20 μm or more, the light emitting efficiency of the prepared wavelength conversion device is significantly reduced because the packing ratio of the phosphor is lower.
TABLE 2 average reflectance for reflective particles of different particle sizes
As can be seen from the above table, when the wavelength conversion device is manufactured using the reflective particles having the particle diameter (0.02 to 3 μm) falling within the range of the present invention, a higher average reflectance (91% or more) can be further exhibited. As described above, when the particle diameter of the emitting particle is larger than 3 μm, a large decrease in average reflectance occurs.
Although the wavelength conversion device according to the present invention has been exemplarily described above with reference to the accompanying drawings, the present invention is not limited thereto, and those skilled in the art will appreciate that various changes, combinations, sub-combinations, and modifications may be made without departing from the spirit or concept of the invention defined by the appended claims.
Claims (7)
1. A wavelength conversion device comprising a light emitting layer, a reflective layer and a substrate laminated in this order, characterized in that the light emitting layer is composed of a first glass frit and a phosphor material, wherein the phosphor material is encapsulated by the first glass frit into a layer;
the particle size D50 of the fluorescent powder material is 5-20 μm;
the substrate is a ceramic substrate;
wherein the reflective layer comprises a second glass frit and reflective particles, wherein the reflective particles are encapsulated by the second glass frit into a layer; the particle size D50 of the reflective particles is 0.2-3 μm;
and wherein the first glass frit and the second glass frit are of the same type; the particle size D50 of the first glass powder is 3.1-3.5 μm; the particle size D50 of the second glass powder is 0.5-1 μm.
2. The wavelength conversion device according to claim 1, wherein the substrate is composed of a ceramic material or a single crystal-based inorganic material;
the shape of the substrate is selected from a disc shape or a circular ring shape.
3. The wavelength conversion device according to claim 1, wherein the phosphor material is selected from a yellow phosphor and/or a green phosphor and/or a red phosphor;
wherein the particle size D50 of the yellow fluorescent powder is 8-17 μm;
wherein the particle size D50 of the green fluorescent powder is 15-16 μm;
wherein the particle size D50 of the red fluorescent powder is 10-17 μm.
4. The wavelength conversion device according to any one of claims 1 to 3, wherein the reflective layer and the light emitting layer are each independently in the shape of a circular ring or a part of a circular ring;
wherein the reflective layer and the light emitting layer have the same shape.
5. The wavelength conversion device of claim 1, further comprising a second substrate disposed below the substrate;
wherein the second substrate is selected from a copper substrate, an aluminum substrate, a ceramic substrate and an aluminum nitride single crystal substrate.
6. A light source comprising the wavelength conversion device of any one of claims 1-5.
7. A projection device comprising the wavelength conversion device of any one of claims 1-5.
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| CN201710600503.6A CN109282169B (en) | 2017-07-21 | 2017-07-21 | Wavelength conversion device, light source comprising same and projection device |
| PCT/CN2017/114718 WO2019015221A1 (en) | 2017-07-21 | 2017-12-06 | Wavelength conversion device, light source comprising same, and projection device |
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| CN201710600503.6A CN109282169B (en) | 2017-07-21 | 2017-07-21 | Wavelength conversion device, light source comprising same and projection device |
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| CN109282169A (en) | 2019-01-29 |
| WO2019015221A1 (en) | 2019-01-24 |
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