CN109280960A - It is a kind of nanocrystalline and the preparation method and application thereof - Google Patents
It is a kind of nanocrystalline and the preparation method and application thereof Download PDFInfo
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- CN109280960A CN109280960A CN201710595117.2A CN201710595117A CN109280960A CN 109280960 A CN109280960 A CN 109280960A CN 201710595117 A CN201710595117 A CN 201710595117A CN 109280960 A CN109280960 A CN 109280960A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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Abstract
The present invention discloses a kind of nanocrystalline and the preparation method and application thereof, carries out crystal growth in the reaction system for including anion presoma, cationic presoma and halogen-containing polar organic compound, is prepared described nanocrystalline.The present invention controls nanocrystalline pattern by adding halogen-containing compound in nanocrystalline preparation process, is added different types of halogen-containing compound, the different-shapes such as available rodlike class, Tetrapoda, octahedra class, cone class it is nanocrystalline.The present invention can also control the variation of pattern by controlling the dosage of halogen-containing compound, reaction time of the adding manner of halogen-containing compound, the reaction temperature of nucleation and nucleation etc..The method of the present invention simple process is easy to repeat.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of nanocrystalline and preparation method thereof answered with QLED
With.
Background technique
The synthesis of ball shaped nano crystalline substance is mainly completed by hot injection method, and researcher is gradually by nanocrystal pattern
Research expands to more complicated geometry, such as the nanocrystalline structure of rodlike, Tetrapoda, octahedra class complexity.Complicated
It is nanocrystalline in forming process, corresponding crystallization process be mainly rely on atom accumulation mode and different growth mechanisms come
It completes.Nanocrystalline pattern, size have critically important influence to nanocrystalline photoelectric property, physicochemical properties.
There are many kinds of the modes for changing nanocrystalline morphology and size.General regulation method be by adjust its ligand and
The relative concentration of presoma controls nanocrystalline morphology and size size.Further control method is existed by nano particle
Self assembling process in solution controls its pattern.These methods can finally change nanocrystalline pattern and size,
And the ligand on surface is typically all to have longer organic molecule chain, this is conducive to nanocrystalline dispersion.But there are still such as
Lower problem: whether one can be used on electricity device due to much nanocrystalline, can take into account nanocrystalline ligand and can
Device performance is influenced, if such as finding nanocrystalline ligand in relation to Light-Emitting Diode, the research of solar battery device
When longer or surface passivation is insufficient, the performance of device can be impacted.Second, in nanocrystalline pattern control, especially
In the nanocrystalline preparation process of Binary-phase, by regulating and controlling nanocrystalline ligand species and concentration, (general alkanes are organic
Ligand) it is difficult to be effectively improved the pattern of nanocrystal.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide it is a kind of it is nanocrystalline and preparation method thereof with
QLED device, it is intended to solve the existing ligand species and its concentration nanocrystalline by regulation, be difficult to be effectively improved nano-crystal shape
The problem of looks.
Technical scheme is as follows:
A kind of nanocrystalline preparation method, wherein comprising steps of
It is including by the anti-of anion precursor solution, cationic precursor solution and the mixing of halogen-containing polar organic compound
It answers and carries out crystal growth in system, be prepared described nanocrystalline.
Nanocrystalline preparation method of the invention, wherein described is including by anion precursor solution, cationic forerunner
The step of carrying out crystal growth in liquid solution and the reaction system of halogen-containing polar organic compound mixing includes: by the yin
The solution of ion presoma obtains mixed solution after mixing with the solution of cationic presoma, is gradually added to mixed solution halogen
The polar organic compound of element carries out crystal growth, is prepared described nanocrystalline.
Nanocrystalline preparation method of the invention, wherein described is including by anion precursor solution, cationic forerunner
The step of carrying out crystal growth in liquid solution and the reaction system of halogen-containing polar organic compound mixing includes: all to contain
The polar organic compound of halogen obtains mixed solution after mixing with the solution of cationic presoma, by the mixed solution and yin
Crystal growth is carried out after the solution mixing of ion presoma, is prepared described nanocrystalline.
Anion in the anion presoma is selected from one of oxygen group elements anion or a variety of.
Cation in the cation presoma is selected from one of I, II, III, IV race thanide cation or a variety of.
The cation precursor solution includes being prepared by cationic predecessor and organic ligand hybrid reaction.Wherein
The organic ligand includes the organic ligand containing Bronsted acid and the organic ligand without containing Bronsted acid.It is described containing Bronsted acid
Contain functional group-COOH ,-OH ,-NH in organic ligand2, such as: oleic acid (OA), oleyl amine (OAm), diphenyl ether tetracarboxylic dianhydride
(ODPA), organic phospho acid etc. is without being limited thereto；The organic ligand without containing Bronsted acid, such as trioctylphosphine oxygen phosphorus (TOPO), three pungent
Base phosphorus (TOP) etc. is without being limited thereto.
Nanocrystalline preparation method of the invention, wherein the halogen-containing polar organic compound is 1,2-, bis- neoprene
Alkane, 1,1,2- trichloroethanes, 1- chlorine octadecane, ethylidene periodide, dodecyl trimethyl ammonium bromide, dichloroethanes, Bromofume,
2,3, one of-dichloroetane or a variety of.
Nanocrystalline preparation method of the invention, wherein the temperature of crystal growth is 150-310 DEG C, time 5-
60min carries out crystal growth in inert atmosphere, vacuum atmosphere or air atmosphere.
The halogen-containing polar organic molecule of the present invention can use shape between its polarity and the polar functional group of organic ligand
At dipole moment, the growth crystal orientation of crystal is controlled by the effect of dipole moment.The each not phase of the polarity of different types of organic molecule
Together, different types of halogen-containing polar organic molecule is added in crystal growing process, can be prepared has not similar shape
Looks it is nanocrystalline.
Use method of the invention that pattern can be prepared as rodlike class, Tetrapoda, octahedra class, the nanometer of cone class
It is brilliant.
Using method of the invention can be prepared I-VI race, II-VI group, III-VI race, group IV-VI binary phasor
One of sub- point, ternary phase quantum dot, quaternary phase quantum dot etc. are a variety of.
Due to the asymmetric molecult structure that halogen-containing polar organic compound has, the polarized dipole that generates with
The anions and canons on nanocrystalline surface will form covalent bond, and halogen-containing atom is compared to alkanes and insulating properties ligand
It is more easier to combine with the metallic atom of quantum dot surface, removes longer alkanes and insulating properties ligand, it can be to nanocrystalline
Passivation is played, so as to enhance charge in the efficiency of transmission of nanometer particle film.It can be made using method of the invention
The standby obtained nanocrystalline functional layer that can be used for making electricity device.
The nanocrystalline quantum dot light emitting layer that can be used for making QLED device.
The utility model has the advantages that the present invention is controlled by adding halogen-containing polar organic compound in nanocrystalline preparation process
Nanocrystalline pattern is made, different types of halogen-containing polar organic compound, available rodlike class, Tetrapoda, eight is added
The different-shapes such as face body class, cone class it is nanocrystalline.The halogen-containing compound of the present invention not only can change nanocrystalline pattern,
Simultaneously passivation can also be played to nanocrystalline.
Detailed description of the invention
Fig. 1 generates showing for dipolar interaction for 1,2- dichloroethanes of the invention and octadecylphosphonic acid and trioctylphosphine phosphorus
It is intended to.
Fig. 2 is the structural schematic diagram of the QLED device of the embodiment of the present invention 1.
Fig. 3 is the structural schematic diagram of the QLED device of the embodiment of the present invention 2.
Specific embodiment
The present invention provide it is a kind of nanocrystalline and preparation method thereof with QLED device, to make the purpose of the present invention, technical solution
And effect is clearer, clear, the present invention is described in more detail below.It should be appreciated that specific implementation described herein
Example is only used to explain the present invention, is not intended to limit the present invention.
A kind of nanocrystalline preparation method, comprising steps of including that anion precursor solution, cationic presoma is molten
Crystal growth is carried out in liquid and the reaction system of halogen-containing polar organic compound mixing, is prepared described nanocrystalline.
Cation in the cation precursor solution is selected from one kind or more of the cation of I, II, III, IV race element
Kind.In a kind of specific embodiment, the cation precursor solution includes being mixed by cationic predecessor with organic ligand
Reaction is closed to be prepared, oxide such as CdO, ZnO etc. that the cation predecessor can be cation are without being limited thereto, sun from
The organic acids such as Zn (OA) of son2、Cd(OA)2 、Pb(OA)2、In(OA)3, zinc diethyl dithiocarbamate etc. is not limited to
This.The organic ligand includes the organic ligand containing Bronsted acid and the organic ligand without containing Bronsted acid.It is described to contain proton
Contain functional group-COOH ,-OH ,-NH in the organic ligand of acid2、-P(O)(OH)2, such as: oleic acid (OA), oleyl amine (OAm), diphenyl ether
Tetracarboxylic dianhydride (ODPA), organic phospho acid etc. are without being limited thereto, and such ligand can not only ionize out H+It is anti-with cationic predecessor
Corresponding cationic precursor should be formed, at the same again can to formation it is nanocrystalline in cation form coordination；It is another
Class is free from the organic ligand of Bronsted acid, such as trioctylphosphine oxygen phosphorus (TOPO), trioctylphosphine phosphorus (TOP) are without being limited thereto, such to match
Body be mainly with formation it is nanocrystalline in anion formed coordination.
Anion in the anion precursor solution is selected from the one or more of the anion of oxygen group elements.Anion
Precursor includes S-ODE, S-TOP, S-OA, Se-TOP, S-OLA, S-TBP, Se-TBP, Te-ODE, Te-OA, Te-TOP, Te-
One of TBP or a variety of.
The present invention can be by adjusting the dosage of halogen-containing polar organic compound, halogen-containing polar organic compound
Adding manner, growth temperature and growth time etc. control the variation of nanocrystalline pattern.
It is including by anion precursor solution, cationic precursor solution in a kind of wherein specific embodiment
Including: with the step of carrying out crystal growth in the reaction system of halogen-containing polar organic compound mixing will be all described halogen
After the polar organic compound of element is mixed with cationic precursor solution, anion precursor solution is continuously added, in mixture
Crystal growth is carried out in system, is prepared described nanocrystalline.
It is including by anion precursor solution, cationic precursor solution in a kind of wherein specific embodiment
It include: by cationic presoma with the step of carrying out crystal growth in the reaction system of halogen-containing polar organic compound mixing
After solution is mixed with anion precursor solution, it is gradually added halogen-containing polar organic compound and carries out crystal growth, preparation
It obtains described nanocrystalline.
Preferably, halogen-containing polar organic compound is disposably all added in cationic precursor solution and is carried out
Crystal growth can be generated sufficiently with the ligand of the cation in cationic precursor solution mutual using such adding manner
After effect, and anion forerunner's precursor reactant, and then influence crystal growth.
Halogen-containing polar organic compound of the invention can use its polarity and organic ligand polar functional group it
Between form dipole moment, the growth crystal orientation of crystal is controlled by the effect of dipole moment.The polarity of different types of organic molecule is each
It is not identical, different types of halogen-containing polar organic compound is added in crystal growing process, can be prepared has
Different-shape it is nanocrystalline.
In a kind of specific embodiment, as shown in Figure 1, the halogen-containing polar organic conjunction that the present invention is different
Object, due to its structure asymmetry, corresponding functional group shows corresponding polar effect, 1,2- dichloroethanes and different ligands it
Between (octadecylphosphonic acid and trioctylphosphine phosphorus) dipolar interaction can be generated, will affect nanocrystalline growth crystal form.
In nanocrystalline growth course, the selection of different halogen-containing polar organic compound types will cause nanocrystalline
The difference of pattern.Preferably, it is 2-18 halogenated alkane, hydrocarbon carbon that the halogen-containing polar organic compound, which includes carbon atom number,
Atomicity is the quaternary ammonium halides salt of 2-18.Such as can be 1,2- dichloroetane (1,2-DBC), 1,1,2- trichloroethanes (1,1,
2-TCE), 1- chlorine octadecane (1-COD), ethylidene periodide (1,2-DIE), dichloroethanes (1,2-DCE), Bromofume (1,2-
DBE), 2,3 ,-dichloroetane (2,3 ,-DPC), trimethyl ammonium halide (DTAB), four octyl ammonium halides one kind or
It is a variety of, but not limited to this.
Cationic mole ratio is 1-2 in halogen-containing polar organic compound and cationic presoma, this is because
The halogen-containing polar organic compound content being added is too low can not to embody halogen-containing polar organic compound to nanometer crystalline form
The influence that looks generate；The halogen-containing polar organic compound of halogen-containing polar organic compound too high levels and ligand being added
Between interaction it is relatively weak, therefore negative effect can also be generated to the generation of nanocrystalline different-shape.Before cation
Drive the mole ratio 1-5 of the anion element in the cation element and anion presoma in body.
The temperature of crystal growth is 150-310 DEG C, this is because temperature is too low, corresponding reaction will not occur, and be cannot get
It is nanocrystalline；Temperature is excessively high to make corresponding solvent vapor away, and change the concentration of solution, influence nanocrystalline generating rate.Time
For 5-60min, this is because time too short nanocrystalline corresponding pattern does not show not come out, the corresponding precursor substance of overlong time is
Terminate through nucleation, therefore the too long time is not necessarily to.It is raw that crystal is carried out in inert atmosphere, vacuum atmosphere or air atmosphere
It is long.
Nanocrystalline crystal growth different formation stages (crystallization, growth, mature, supersaturation) and its yin, yang from
The wear rate of sub- presoma has close ties.Using adding halogen-containing compound in nanocrystalline preparation process, and adjust
The dosage of halogen-containing compound, the adding manner of halogen-containing compound, growth temperature and growth time is saved to receive to control
The variation of the pattern of meter Jing (from nanometer rods to hexagonal pyramid).The selection of different halogen-containing classes of compounds, will also result in nanometer
The difference of crystalline form looks.
The nanocrystalline of different-shape, including rodlike class, Tetrapoda, polyhedron can be prepared using method of the invention
Class (such as hexahedron class or octahedra class), cone class.It is described nanocrystalline to be but be not limited to Binary-phase quantum dot, ternary phase
One of quantum dot, quaternary phase quantum dot etc. are a variety of.The Binary-phase quantum dot can be but be not limited to CdS, CdSe,
One of CdTe, InP, AgS, PbS, PbSe, HgS or a variety of.The ternary phase quantum dot can be but be not limited to ZnXCd1- XS、CuXIn1-XS、ZnXCd1-XSe、ZnXSe1-XS、ZnXCd1-XTe、PbSeXS1-XOne of or it is a variety of.The quaternary phase quantum
Point can be but be not limited to ZnXCd1-XS/ZnSe、CuXIn1-XS/ZnS、ZnXCd1-XSe/ZnS、CuInSeS、ZnXCd1-XTe/
ZnS、PbSeXS1-XOne of/ZnS or a variety of.
The nanocrystalline of different-shape is prepared in the different crystal phase directions of growth, with device generated on electricity device
Part effect is different, is conducive to extend nanocrystalline application in this way.The nanocrystalline function that can be used for preparing different electricity devices
Ergosphere.The electricity device includes: quantum dot photovoltaic battery (QPV), quantum dot light emitting battery (QLEEC), quantum dot field-effect
Manage (QFET), quantum dot light emitting field-effect tube, quantum dot laser, quantum point sensor etc..
Due to the asymmetric molecult structure that halogen-containing polar organic compound has, the polarized dipole that generates with
The anions and canons on nanocrystalline surface will form covalent bond, and halogen-containing atom is compared to alkanes and insulating properties ligand
It is more easier to combine with the metallic atom of quantum dot surface, removes longer alkanes and insulating properties ligand, it can be to nanocrystalline
Passivation is played, so as to enhance charge in the efficiency of transmission of nanometer particle film.It is described nanocrystalline to can be used for preparing
The luminescent layer of QLED device.Below by several embodiments, the present invention is described in detail.
Embodiment 1
The hexagon cone CdSe of the present embodiment nanocrystalline preparation method, includes the following steps:
1), the preparation of Se-TOP precursor solution:
The selenium powder (Se) for weighing 2mmol is dissolved in the tri octyl phosphine (TOP) of 4ml, and it is molten to obtain Se-TOP presoma for normal-temperature dissolution
Liquid, it is spare；
2), the preparation of the cadmium precursor solution containing halogen-containing compound:
Weigh cadmium oxide (CdO), the diphenyl ether tetracarboxylic dianhydride (ODPA) of 0.5mmol and the trioctylphosphine oxygen of 8mmol of 0.2mmol
Phosphorus (TOPO) mixing, and 120 DEG C are heated to, it is vented 30min under an inert gas, mixeding liquid temperature is then heated to 270-
60min is heated after within the scope of 290 DEG C, until mixed liquor color becomes colourless transparent liquid, is then again down to mixeding liquid temperature
After 90 DEG C, the 1- chlorine octadecane (1-COD) of 0.2mmol is added, mixeding liquid temperature is raised to 265 DEG C again, obtains containing containing
The cadmium precursor solution of the compound of halogen；
3), hexagon cone CdSe nanocrystalline synthesis:
After the above-mentioned cadmium precursor solution temperature containing halogen-containing compound is raised to 265 DEG C, the Se- of 0.5mmol is then extracted
The fast speed heat of TOP precursor solution, which is injected into the cadmium precursor solution containing halogen-containing compound, reacts 15min, reaction process
In observe that mixed liquor color first becomes orange by yellow and then again becomes brown, it is nanocrystalline to finally obtain hexagon cone CdSe.
After liquid to be mixed is cooled to 80 DEG C, the toluene solution of 5ml is injected, then is repeatedly centrifugated, precipitated clearly by heating methanol
It washes, it is nanocrystalline to obtain hexagon cone CdSe.
As shown in Fig. 2, the QLED device of the present embodiment includes, cathode 2 described in cathode 2(is placed on substrate 1), electron-transport
Layer 3, quantum dot light emitting layer 4, hole transmission layer 5, anode 6, wherein the material of quantum dot light emitting layer 4 is six sides of the present embodiment
Shape cone CdSe nanocrystalline material.
Embodiment 2
The rodlike CdSe of the present embodiment nanocrystalline preparation method, includes the following steps:
1), the preparation of Se-TOP precursor solution:
The selenium powder (Se) for weighing 2mmol is dissolved in the tri octyl phosphine (TOP) of 4ml, and it is molten to obtain Se-TOP presoma for normal-temperature dissolution
Liquid, it is spare；
2), the preparation of the cadmium precursor solution containing halogen-containing compound:
Weigh cadmium oxide (CdO), the diphenyl ether tetracarboxylic dianhydride (ODPA) of 0.5mmol and the trioctylphosphine oxygen of 8mmol of 0.2mmol
Phosphorus (TOPO) mixing, and 120 DEG C are heated to, it is vented 30min under an inert gas, mixeding liquid temperature is then heated to 270-
60min is heated after within the scope of 290 DEG C, until mixed liquor color becomes colourless transparent liquid, is then again down to mixeding liquid temperature
After 90 DEG C, the dichloroethanes of 0.4mmol is added, mixeding liquid temperature is raised to 265 DEG C again, obtains containing halogen-containing chemical combination
The cadmium precursor solution of object；
3), rodlike CdSe nanocrystalline synthesis:
After the above-mentioned cadmium precursor solution temperature containing halogen-containing compound is raised to 265 DEG C, before the Se-TOP for extracting 0.5mmol
It drives the fast speed heat of liquid solution and is injected into the cadmium precursor solution containing halogen-containing compound and react 60min, seen in reaction process
It observes mixed liquor color first to become orange by yellow and then again become brown, it is nanocrystalline to finally obtain rodlike CdSe.Liquid cooling to be mixed
But it to the toluene solution for injecting 5ml after 80 DEG C, then is repeatedly centrifugated by heating methanol, precipitates cleaning, obtained rodlike
CdSe is nanocrystalline.
As shown in figure 3, the QLED device of the present embodiment includes, cathode 8 described in cathode 8(is placed on substrate 7), electron-transport
Layer 9, quantum dot light emitting layer 10, hole transmission layer 11, anode 12, wherein, the material of quantum dot light emitting layer 10 be the present embodiment
Rodlike CdSe nanocrystalline material.
The present invention is nanocrystalline to control by adding halogen-containing polar organic compound in nanocrystalline preparation process
Pattern, different types of halogen-containing polar organic compound, available rodlike class, Tetrapoda, octahedra class, cone is added
The different-shapes such as body class it is nanocrystalline.The present invention can also be by controlling the dosage of halogen-containing compound, halogen-containing chemical combination
Reaction time of the adding manner of object, the reaction temperature of nucleation and nucleation etc. controls the variation of pattern.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of nanocrystalline preparation method, which is characterized in that comprising steps of
It is including by the anti-of anion precursor solution, cationic precursor solution and the mixing of halogen-containing polar organic compound
It answers and carries out crystal growth in system, be prepared described nanocrystalline.
2. nanocrystalline preparation method according to claim 1, which is characterized in that described is including by anion presoma
The step of crystal growth is carried out in the reaction system of solution, cationic precursor solution and the mixing of halogen-containing polar organic compound
It suddenly include: to obtain mixed solution after mixing the anion precursor solution with cationic precursor solution, to the mixing
It is gradually added halogen-containing polar organic compound in solution and carries out crystal growth, is prepared described nanocrystalline.
3. nanocrystalline preparation method according to claim 1, which is characterized in that described is including by anion presoma
The step of crystal growth is carried out in the reaction system of solution, cationic precursor solution and the mixing of halogen-containing polar organic compound
It suddenly include: to obtain mixed solution after mixing halogen-containing polar organic compound with cationic precursor solution, it will be described mixed
It closes after solution is mixed with anion precursor solution and carries out crystal growth, be prepared described nanocrystalline.
4. nanocrystalline preparation method according to claim 1, which is characterized in that it is described cation presoma in sun from
One of the cation of son selected from I, II, III, IV race element is a variety of.
5. nanocrystalline preparation method according to claim 1, which is characterized in that in the anion presoma yin from
One of the anion of son selected from oxygen group elements is a variety of.
6. nanocrystalline preparation method according to claim 1, which is characterized in that prepare the cationic precursor solution
Organic ligand include the organic ligand containing Bronsted acid and the organic ligand without containing Bronsted acid.
7. a kind of nanocrystalline, which is characterized in that the nanocrystalline preparation method system as described in claim 1 to 6 any one
It is standby to obtain, it is described it is nanocrystalline be pattern be rodlike class, Tetrapoda, octahedron class, cone class it is nanocrystalline.
8. according to claim 7 nanocrystalline, which is characterized in that described nanocrystalline for Binary-phase quantum dot, ternary phasor
One of sub- point, quaternary phase quantum dot are a variety of.
9. nanocrystalline application described in a kind of claim 7 to 8 any one, which is characterized in that nanocrystalline be used to make by described
The functional layer of standby electricity device.
10. nanocrystalline application described in a kind of claim 7 to 8 any one, which is characterized in that nanocrystalline be used to make by described
The quantum dot light emitting layer of standby QLED device.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11603493B2 (en) | 2019-10-17 | 2023-03-14 | Samsung Electronics Co., Ltd. | Core shell quantum dot, production method thereof, and electronic device including the same |
| CN115818582A (en) * | 2021-09-16 | 2023-03-21 | 浙江大学 | Precursor composition and preparation method thereof, and preparation method of inorganic nanocrystal |
| US11692136B2 (en) | 2019-10-17 | 2023-07-04 | Samsung Electronics Co., Ltd. | Core shell quantum dot, production method thereof, and electronic device including the same |
| CN117230361A (en) * | 2023-09-20 | 2023-12-15 | 国网智能电网研究院有限公司 | Iron-based nanocrystalline strip and preparation method and application thereof |
| US11999887B2 (en) | 2019-10-17 | 2024-06-04 | Samsung Electronics Co., Ltd. | Core shell quantum dot, production method thereof, and electronic device including the same |
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