CN109254507A - Photoresist release agent and photoresist stripping means - Google Patents
Photoresist release agent and photoresist stripping means Download PDFInfo
- Publication number
- CN109254507A CN109254507A CN201811218943.6A CN201811218943A CN109254507A CN 109254507 A CN109254507 A CN 109254507A CN 201811218943 A CN201811218943 A CN 201811218943A CN 109254507 A CN109254507 A CN 109254507A
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- Prior art keywords
- photoresist
- release agent
- ether
- glycol
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Present invention discloses photoresist release agent, including following mass percent component, amine compound 10-25%, polar solvent 55-75%, anticorrosive 0.5-1.2%, water 10-20%.There is the present invention photoresist release agent of appropriate proportioning component to be conducive to its application in integrated circuit, semiconductor device or liquid crystal display.
Description
Technical field
The invention belongs to integrated circuit or semiconductor applied technical field more particularly to a kind of photoresist release agent and
Photoresist stripping means.
Background technique
FPD is based on the various displaying principles such as LCD, LED, EL, VFD, FED, SED, PDP, has and fine lead has been arranged
The electrode structure of line uses photoresist in its manufacturing process.For example, in a liquid crystal display, on being formed in substrate
Al, Al alloy, painting photoresist on the insulating films such as conductive metals film, the SiO2 film such as Cu, Cu alloy, it is implemented to expose
Light, development processing, resist pattern is formed, using the patterned resist as mask to above-mentioned conductive metal film, exhausted
Velum etc. is etched, formed micro wire after, with remover remove should not resist layer, to manufacture liquid crystal display.
Photoresist is the essential substance in photolithography process, and photolithography process is general
It is also applied to the semiconductor devices such as integrated circuit.After carrying out photolithographic process, photoresist at high temperature by
Stripping solution removal, but there are problems that lower part metal film may be stripped solution corrosion too quickly in the process.
Photoresist should can be at low temperature in being removed in the short time, and it should have fabulous removing energy
Power, so as to which photoresist residual substance is not present after rinsing in substrate.In addition, photoresist should have low-corrosiveness,
To prevent metal film or the insulating film of photoresist lower layer to be damaged.Phase interaction occurs between the solvent of remover if constituted
With, then the storage stability of remover will appear problem, and may due to the difference of order by merging when remover manufactures and
Different property is shown, therefore, should have inertia and high-temperature stability between the mixed solvent of photoresist.Consider
Environmental problem caused by safety or waste processing to staff, photoresist should also hypotoxicity.Work as photoresist
When being removed in the high temperature process, if there is a large amount of volatilizations, then constituting composition ratio can change rapidly, to make remover
Process stability and work reproducibility reduce.Therefore, photoresist should have low volatility.The remover institute of predetermined amount
The substrate quantity that can be handled should be higher, and the component for forming remover should be easy to get, and component should be cheap, and discarded
Remover should can be recycled by reprocessing, to should can ensure business efficiency.
Therefore, the photoresist release agent with appropriate proportioning component is conducive to it in integrated circuit, semiconductor device
Or the application in liquid crystal display.
Summary of the invention
The purpose of the present invention is to solve above-mentioned technical problems, and provide a kind of photoresist release agent and photic anti-
Agent stripping means is lost, to realize excellent photoresist removal and stripping performance.In order to achieve the above object, skill of the present invention
Art scheme is as follows:
Photoresist release agent, including following mass percent component, amine compound 10-25%, polar solvent 55-
75%, anticorrosive 0.5-1.2%, water 10-20%.
Specifically, the amine compound includes at least one selected from chain amine compounds and cyclic amine compound.Tool
Body, the chain amine compounds include (2- amino ethoxy) -1- ethyl alcohol (AEE), amino ethyl ethanolamine (AEEA), Dan Yi
Hydramine, N- Methylethyl amine (N-MEA), 1- aminoisopropanol (AIP), methyl dimethoxy amine (MDEA), diethylenetriamines
(DETA) one or more and in trien (TETA).
Specifically, the cyclic amine compound includes imidazole radicals -4- ethyl alcohol (IME), aminoethylpiperazine (AEP) and hydroxyl
It is one or more in ethyl piperazidine (HEP).
Specifically, the polar solvent includes aprotic polar solvent and protic polar solvent.
Specifically, the aprotic polar solvent be dimethyl sulfoxide, N-METHYLFORMAMIDE, n-methyl-2-pyrrolidone,
DMAC N,N' dimethyl acetamide, N,N-dimethylformamide, N, N- diethylformamide, N, N- methylimidazole, gamma-butyrolacton,
It is one or more in sulfolane, tetrahydrofurfuryl alcohol.
Specifically, the protic polar solvent is ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol first
Ether, ethylene glycol ethyl ether, butyl glycol ether, diethylene glycol dimethyl ether, diethylene glycol ether, butyl, triethylene glycol methyl ether,
Tri ethylene glycol ethyl ether, triethylene glycol butyl ether, dipropylene glycol methyl ether, diethylene glycol dimethyl ether, dipropylene glycol methyl ether and dipropyl two
It is one or more in alcohol ether.
Specifically, the anticorrosive includes catechol, pyrogallol, gallic acid, phthalic acid, O-phthalic
Acid anhydrides, wherein the ratio of each component is 1-2:0.2-0.5:0.3-0.7:0.4-0.5:1-2.
Photoresist stripping means, includes the following steps:
Photoresist is coated on conductive metal film or insulating film by S1, forms photoresist pattern；
S2 uses the photoresist of the pattern as conductive metal film described in mask etching or insulating film；
S3 removes photoresist using the photoresist release agent.
Compared with prior art, the beneficial effect master of photoresist release agent and photoresist stripping means of the present invention
It is embodied in:
Photoresist can be at low temperature in removing in the short time, and has fabulous stripping ability, base after flushing
Photoresist residual substance is not present on bottom；Photoresist release agent has low-corrosiveness, prevents photoresist lower layer
Metal film or insulating film be damaged, constitute and do not interact between the solvent of remover, the storage stability of remover,
There is inertia and high-temperature stability between the mixed solvent of photoresist；In view of safety or the waste processing of staff
Caused by environmental problem, photoresist release agent hypotoxicity when photoresist is removed in the high temperature process
Now a large amount of volatilizations, constituting composition ratio will not change rapidly, and the process of remover removing has stability；Photoresist removing
Agent has low volatility, and the substrate quantity that the remover of predetermined amount can be handled is higher, and the component for forming remover is easy to get,
Component is cheap, and discarded remover can be recycled by reprocessing, so as to ensure business efficiency.
Specific embodiment
Below by the technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.
Embodiment 1:
The present embodiment is photoresist release agent, including following mass percent component, amine compound 19%, polarity
Solvent 66%, anticorrosive 0.9%, water 14.1%.
Amine compound includes at least one selected from chain amine compounds and cyclic amine compound.
Chain amine compounds include (2- amino ethoxy) -1- ethyl alcohol (AEE), amino ethyl ethanolamine (AEEA), Dan Yi
Hydramine, N- Methylethyl amine (N-MEA), 1- aminoisopropanol (AIP), methyl dimethoxy amine (MDEA), diethylenetriamines
(DETA) one or more and in trien (TETA).
Cyclic amine compound includes imidazole radicals -4- ethyl alcohol (IME), aminoethylpiperazine (AEP) and hydroxyethylpiperazin
(HEP) one or more in.
Polar solvent includes aprotic polar solvent and protic polar solvent.
Aprotic polar solvent is dimethyl sulfoxide, N-METHYLFORMAMIDE, n-methyl-2-pyrrolidone, N, N- dimethyl
Acetamide, N,N-dimethylformamide, N, N- diethylformamide, N, N- methylimidazole, gamma-butyrolacton, sulfolane, tetrahydro
It is one or more in furfuryl alcohol.
Protic polar solvent is ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol monomethyl ether, ethylene glycol ethyl ethers
Ether, butyl glycol ether, diethylene glycol dimethyl ether, diethylene glycol ether, butyl, triethylene glycol methyl ether, triethylene glycol second
One in ether, triethylene glycol butyl ether, dipropylene glycol methyl ether, diethylene glycol dimethyl ether, dipropylene glycol methyl ether and dipropylene glycol ethyl ether
Kind is a variety of.
Anticorrosive includes catechol, pyrogallol, gallic acid, phthalic acid, phthalic anhydride, wherein respectively
The ratio of component is 1.5:0.35:0.5:0.45:1.5.
Photoresist stripping means, includes the following steps:
Photoresist is coated on conductive metal film or insulating film by S1, forms photoresist pattern；
S2 uses the photoresist of the pattern as conductive metal film described in mask etching or insulating film；
S3 removes photoresist using photoresist release agent.
Embodiment 2:
Distinctive points relative to embodiment 1 are:
The present embodiment is photoresist release agent, including following mass percent component, amine compound 10%, polarity
Solvent 75%, anticorrosive 0.5%, water 14.5%.
Anticorrosive includes catechol, pyrogallol, gallic acid, phthalic acid, phthalic anhydride, wherein respectively
The ratio of component is 1:0.5:0.3:0.5:1.
Embodiment 3:
Distinctive points relative to embodiment 1 are:
The present embodiment is photoresist release agent, including following mass percent component, amine compound 25%, polarity
Solvent 55%, anticorrosive 1.2%, water 18.8%.
Anticorrosive includes catechol, pyrogallol, gallic acid, phthalic acid, phthalic anhydride, wherein respectively
The ratio of component is 2:0.2:0.7:0.4:2.
When using above-described embodiment, photoresist can be at low temperature in removing in the short time, and has fabulous
Photoresist residual substance is not present in stripping ability in substrate after flushing；Photoresist release agent has low-corrosiveness, prevents
Only the metal film or insulating film of photoresist lower layer are damaged, and constitute and do not interact between the solvent of remover, stripping
Storage stability from agent has inertia and high-temperature stability between the mixed solvent of photoresist；In view of work people
Environmental problem caused by the safety or waste of member is handled, photoresist release agent hypotoxicity, when photoresist is in high temperature mistake
When being removed in journey, do not occur largely volatilizing, constituting composition ratio will not change rapidly, and the process of remover removing has steady
It is qualitative；Photoresist release agent has low volatility, and the substrate quantity that the remover of predetermined amount can be handled is higher, composition stripping
Component from agent is easy to get, and component is cheap, and discarded remover can be recycled by reprocessing, so as to ensure
Business efficiency
Above-described is only some embodiments of the present invention.For those of ordinary skill in the art, not
Under the premise of being detached from the invention design, various modifications and improvements can be made, these belong to protection model of the invention
It encloses.
Claims (9)
1. photoresist release agent, it is characterised in that: including following mass percent component, amine compound 10-25%, pole
Property solvent 55-75%, anticorrosive 0.5-1.2%, water 10-20%.
2. photoresist release agent according to claim 1, it is characterised in that: the amine compound includes being selected from chain
At least one of shape amine compounds and cyclic amine compound.
3. photoresist release agent according to claim 2, it is characterised in that: the chain amine compounds include (2-
Amino ethoxy) -1- ethyl alcohol (AEE), amino ethyl ethanolamine (AEEA), monoethanolamine, N- Methylethyl amine (N-MEA), 1-
It is a kind of in aminoisopropanol (AIP), methyl dimethoxy amine (MDEA), diethylenetriamines (DETA) and trien (TETA)
Or it is a variety of.
4. photoresist release agent according to claim 2, it is characterised in that: the cyclic amine compound includes imidazoles
It is one or more in base -4- ethyl alcohol (IME), aminoethylpiperazine (AEP) and hydroxyethylpiperazin (HEP).
5. photoresist release agent according to claim 1, it is characterised in that: the polar solvent includes aprotic
Polar solvent and protic polar solvent.
6. photoresist release agent according to claim 5, it is characterised in that: the aprotic polar solvent is two
First sulfoxide, N-METHYLFORMAMIDE, n-methyl-2-pyrrolidone, DMAC N,N' dimethyl acetamide, N,N-dimethylformamide, N, N-
Diethylformamide, N, it is N- methylimidazole, gamma-butyrolacton, sulfolane, one or more in tetrahydrofurfuryl alcohol.
7. photoresist release agent according to claim 5, it is characterised in that: the protic polar solvent is second two
Alcohol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol monomethyl ether, ethylene glycol ethyl ether, butyl glycol ether, diethylene glycol dimethyl ether,
Diethylene glycol ether, butyl, triethylene glycol methyl ether, tri ethylene glycol ethyl ether, triethylene glycol butyl ether, dipropylene glycol first
It is one or more in ether, diethylene glycol dimethyl ether, dipropylene glycol methyl ether and dipropylene glycol ethyl ether.
8. photoresist release agent according to claim 1, it is characterised in that: the anticorrosive includes adjacent benzene two
Phenol, pyrogallol, gallic acid, phthalic acid, phthalic anhydride, wherein the ratio of each component is 1-2:0.2-0.5:
0.3-0.7:0.4-0.5:1-2.
9. photoresist stripping means, which comprises the steps of:
Photoresist is coated on conductive metal film or insulating film by S1, forms photoresist pattern；
S2 uses the photoresist of the pattern as conductive metal film described in mask etching or insulating film；
S3 removes photoresist using photoresist release agent such as according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811218943.6A CN109254507A (en) | 2018-10-19 | 2018-10-19 | Photoresist release agent and photoresist stripping means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811218943.6A CN109254507A (en) | 2018-10-19 | 2018-10-19 | Photoresist release agent and photoresist stripping means |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109254507A true CN109254507A (en) | 2019-01-22 |
Family
ID=65046226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811218943.6A Pending CN109254507A (en) | 2018-10-19 | 2018-10-19 | Photoresist release agent and photoresist stripping means |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109254507A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006178347A (en) * | 2004-12-24 | 2006-07-06 | Tosoh Corp | Resist stripping agent |
| CN103631103A (en) * | 2012-08-20 | 2014-03-12 | 株式会社东进世美肯 | Photoresist stripping liquid composition |
| CN104903794A (en) * | 2013-05-07 | 2015-09-09 | 株式会社Lg化学 | Stripper composition for removing photoresist and method for stripping photoresist using same |
| CN106873319A (en) * | 2015-12-14 | 2017-06-20 | 三星显示有限公司 | Photoresist remover composition |
| CN107357142A (en) * | 2017-07-03 | 2017-11-17 | 杭州格林达化学有限公司 | A kind of water system photoresist stripper and preparation method thereof |
-
2018
- 2018-10-19 CN CN201811218943.6A patent/CN109254507A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006178347A (en) * | 2004-12-24 | 2006-07-06 | Tosoh Corp | Resist stripping agent |
| CN103631103A (en) * | 2012-08-20 | 2014-03-12 | 株式会社东进世美肯 | Photoresist stripping liquid composition |
| CN104903794A (en) * | 2013-05-07 | 2015-09-09 | 株式会社Lg化学 | Stripper composition for removing photoresist and method for stripping photoresist using same |
| CN106873319A (en) * | 2015-12-14 | 2017-06-20 | 三星显示有限公司 | Photoresist remover composition |
| CN107357142A (en) * | 2017-07-03 | 2017-11-17 | 杭州格林达化学有限公司 | A kind of water system photoresist stripper and preparation method thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190122 |