CN109254464A - array substrate and liquid crystal display panel - Google Patents
array substrate and liquid crystal display panel Download PDFInfo
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- CN109254464A CN109254464A CN201811366329.4A CN201811366329A CN109254464A CN 109254464 A CN109254464 A CN 109254464A CN 201811366329 A CN201811366329 A CN 201811366329A CN 109254464 A CN109254464 A CN 109254464A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
Abstract
It includes: scan line, data line, storage capacitance bus, storage capacitance branch line that the present invention, which provides a kind of array substrate and liquid crystal display panel, the array substrate,；The a plurality of scan line and a plurality of data line are arranged in a crisscross manner, and surround pixel region between adjacent two scan lines and adjacent two datas line；The storage capacitance bus is parallel to the scan line setting and across the pixel region, and the storage capacitance bus is electrically connected with the wherein scan line for enclosing the pixel region；The storage capacitance branch line extends along the direction of the data line, and is arranged close to the data line, and the storage capacitance branch line is electrically connected with the storage capacitance bus, and the storage capacitance branch line is made of conductive transparent material.The present invention provides a kind of array substrate and liquid crystal display panel, by being arranged close to the storage capacitance branch line of data line, convenient for amendment broken data wire, improves product yield.
Description
Technical field
The present invention relates to field of liquid crystal display more particularly to a kind of array substrate and liquid crystal display panels.
Background technique
The transmitance of liquid crystal display panel plays particularly important effect to the whole display performance of liquid crystal display panel, thoroughly
Cross that rate is higher, liquid crystal display panel can display brightness it is higher, the brightness of backlight can do it is lower, to reduce product
Cost, therefore, in the industry always all in the transmitance for making great efforts promotion liquid crystal display panel.
Fig. 1 is the route design diagram for the array substrate that the prior art provides, refering to what is shown in Fig. 1, available liquid crystal is shown
Array substrate in panel includes scan line 100 and data line 200 arranged in a crossed manner in length and breadth, two adjacent 100 Hes of scan line
Two adjacent data lines 200 enclose multiple pixel regions 500.Each pixel region 500 center parallel in the scan line
100 are provided with the storage capacitance bus 300 being electrically connected with scan line 100.
But data line 200 can break in use, it is low that the broken string of data line 200 will lead to product yield,
And broken string is not easy to correct.
Summary of the invention
The present invention provides a kind of array substrate and liquid crystal display panel, by the storage capacitance branch for being arranged close to data line
Line improves product yield convenient for amendment broken data wire.
One aspect of the present invention provides a kind of array substrate, comprising: scan line, data line, storage capacitance bus, storage capacitance
Branch line；
The a plurality of scan line and a plurality of data line are arranged in a crisscross manner, and adjacent two scan lines and adjacent
Pixel region is surrounded between two data lines；
The storage capacitance bus is parallel to scan line setting and across the pixel region, and the storage capacitance
Bus is electrically connected with the wherein scan line for enclosing the pixel region；
The storage capacitance branch line extends along the direction of the data line, and is arranged close to the data line, described to deposit
Storage is held branch line and is electrically connected with the storage capacitance bus, and the storage capacitance branch line is made of conductive transparent material.
Array substrate as described above, the storage capacitance branch line partly overlap or completely overlapped with the data line.
Array substrate as described above, the storage capacitance branch line are the indium gallium zinc oxide IGZO after conductor.
Array substrate as described above has orientation dark line caused by light orientation, at least partly when the pixel region is shown
The scan line, data line and storage capacitance bus partly overlap with the orientation dark line.
Array substrate as described above, the orientation dark line are ten thousand word dark lines, and the ten thousand words dark line includes being located at the picture
The left branch dark line of the left branch dark line and right branch dark line of plain area edge position, the data line and the two neighboring pixel region and the right side
The overlapping of branch dark line.
Array substrate as described above, the storage capacitance branch line include the first segment and second parallel with the data line
Section, the first segment and second segment are separately positioned on the inside for enclosing adjacent two data lines of the pixel region.
Array substrate as described above, the storage capacitance branch line further include third section, and the third section is divided for connecting
Not Wei Yu the data line two sides the first segment and the second segment.
Array substrate as described above, the storage capacitance bus and the storage capacitance branch line are connected by conductive via
It connects.
Array substrate as described above, the conductive via are arranged in the storage capacitance bus and the storage capacitance branch
On etching barrier layer between line.
Array substrate provided by the invention, by being arranged close to the storage capacitance branch line of data line, convenient for amendment data line
Broken string improves product yield.Storage capacitance can be collectively formed with storage capacitance bus in storage capacitance branch line, improve liquid crystal cell
Voltage retention.Meanwhile storage capacitance branch line is made of conductive transparent material, the aperture opening ratio of pixel will not be reduced, same
Under the demand of the storage capacitance of size, the width due to being provided with storage capacitance branch line, storage capacitance bus can correspond to reduction,
Therefore the metal shading-area of storage capacitance bus reduces, to improve the aperture opening ratio of pixel, improves the saturating of pixel entirety
Cross rate.Further, by making scan line, data line and storage capacitance bus and part orientation dark line weight in array substrate
It closes, to will affect the regions shield of transmitance, the region for keeping original transmitance high is not influenced by route, to improve panel
Whole transmitance.
Another aspect of the present invention also provides a kind of liquid crystal display panel, comprising: array substrate as described above and the battle array
The color membrane substrates that column substrate is oppositely arranged and the layer of liquid crystal molecule being clamped between the array substrate and the color membrane substrates.
Liquid crystal display panel provided by the invention, by the storage capacitance branch for being arranged close to data line in array substrate
Line improves product yield convenient for amendment broken data wire.Storage can be collectively formed in storage capacitance branch line with storage capacitance bus
Capacitor improves the voltage retention of liquid crystal cell.Meanwhile storage capacitance branch line is made of conductive transparent material, will not reduce picture
The aperture opening ratio of element, under the demand of an equal amount of storage capacitance, due to being provided with storage capacitance branch line, storage capacitance bus
Width can correspond to reduction, therefore the metal shading-area of storage capacitance bus reduces, to improve the aperture opening ratio of pixel, mentions
The high transmitance of pixel entirety.Further, by make scan line, data line and storage capacitance bus in array substrate with
Orientation dark line in part is overlapped, to will affect the regions shield of transmitance, the region for keeping original transmitance high is not by the shadow of route
It rings, to improve the whole transmitance of panel.
Detailed description of the invention
In order to illustrate more clearly of the present invention or the technical solution of the prior art, embodiment or the prior art will be retouched below
Attached drawing needed in stating is briefly described, it should be apparent that, the accompanying drawings in the following description is of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the route design diagram for the array substrate that the prior art provides；
Fig. 2 is the route design diagram of array substrate provided in an embodiment of the present invention.
Appended drawing reference:
100- scan line
200- data line
300- storage capacitance bus
400- storage capacitance branch line
41- first segment
42- second segment
43- third section
500- pixel region
600- conductive via
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the attached drawing in the present invention, to this
Technical solution in invention is clearly and completely described, it is clear that and described embodiments are some of the embodiments of the present invention,
Instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative labor
Every other embodiment obtained under the premise of dynamic, shall fall within the protection scope of the present invention.
It should be noted that vertical orientation (Vertical Alignment, abbreviation VA) technology of liquid crystal display panel
Principle is that liquid crystal molecule is made to carry out orientation basically perpendicular to panel in the state of not being loaded into electric field, when being loaded into electric field, liquid crystal
Molecule is toppled over, and state changes；The toppling direction of liquid crystal molecule, can design on liquid crystal display panel when being loaded into electric field for control
Protrusion and slit gap realize state and stable state that liquid crystal molecule is slightly tilted by changing their shape.It is loaded into
When electric field, the liquid crystal molecule near protrusion and slit gap is first begin to topple over, then according to domino effect, with pushing over
Other liquid crystal molecules.
Control alignment direction generally uses friction matching or light orientation, and friction matching can generate electrostatic and particle contamination
Problem, and due to friction matching can only the orientation in a horizontal direction, the more quadrants for not being suitable for needing to expand visual angle are vertical
Orientation (Mutil-domain Vertical Alignment, abbreviation MVA).Light orientation is a kind of contactless alignment technique,
It is radiated on the high molecular polymer alignment film of photaesthesia using linearly polarized light, forms inclination angle.
UV2A (Ultra Violet Vertical Alignment) technology is a kind of using ultraviolet light (Ultra
Violet, abbreviation UV) carry out LCD alignment vertical orientation (Vertical Alignment, abbreviation VA) technology.By leading
Enter UV2A technology can be saved at present in VA mode liquid crystal panel for controlling the slit gap and protrusion of liquid crystal alignment,
To improve the aperture opening ratio of liquid crystal display panel.
Due to the double action of light orientation and ITO fringe field by the two sides TFT and CF, pixel will appear in white state
Dark line.The number in the region of formation and the orientation of dark line is closely related, in the same region, the initial orientation angle of liquid crystal molecule
It is the same when spending, after making alive, so that it may topple over towards the direction of initial orientation angle, but the initial orientation of different zones
Angle is different.Since liquid crystal is there are domino effect, a liquid crystal is toppled over to a direction, will pull neighbouring liquid crystal
Topple over to identical direction, the pulling for the liquid crystal that the liquid crystal between two regions is toppled over by both sides both direction, therefore exists
A kind of imbalance, the liquid crystal between two regions enters a kind of disturbance state, to form black line.
In four-quadrant vertical orientation technology, pixel region is divided into four quadrants with different alignment, thus pixel
The dark line formed inside area is generally " Swastika " word shape or " Swastika " word shape, it is referred to as orientation dark line, orientation dark line can reduce liquid
The transmitance of LCD panel.
Below with reference to the accompanying drawings and in conjunction with specific embodiments the present invention is described.
Embodiment one
Fig. 2 is the route design diagram of array substrate provided in an embodiment of the present invention, refering to what is shown in Fig. 2, the present invention one
Aspect provides a kind of array substrate, comprising: scan line 100, data line 200, storage capacitance bus 300, storage capacitance branch line
400；Multi-strip scanning line 100 and multiple data lines 200 are arranged in a crisscross manner, and adjacent two scan lines 100 and adjacent two numbers
According to surrounding pixel region 500 between line 200；Storage capacitance bus 300 is parallel to the setting of scan line 100 and across pixel region 500,
And storage capacitance bus 300 is electrically connected with the wherein scan line 100 for enclosing pixel region 500；400 edge of storage capacitance branch line
The direction of data line 200 extend, and be arranged close to data line 200, storage capacitance branch line 400 and the electricity of storage capacitance bus 300
Connection, and the storage capacitance branch line 400 is made of conductive transparent material.
Wherein, data line 200 is used to carry out the transmission of data, and scan line 100 is used for as control thin film transistor (TFT) TFT's
Switch, scan line 100 and the insulation of data line 200 intersect, and scan line 100 and 200 separated region of data line are formed with pixel electrode,
The infall of scan line 100 and data line 200 is provided with thin film transistor (TFT) TFT.Generally, multi-strip scanning line 100 is arranged in parallel,
And it extends in a first direction；Multiple data lines 200 are arranged in parallel, and extend in a second direction；First direction and second direction are hung down
It is straight to intersect.
It is understood that array substrate further include: pixel electrode, pixel electrode be covered on it is saturating in pixel region 500
Bright conductive film.The effect of pixel electrode is to apply voltage to liquid crystal cell, and in order to not influence the transmitance of pixel, pixel electrode is needed
To use transparent membrane.
Optionally, pixel electrode is ito thin film.Tin indium oxide (Indium Tin Oxide, abbreviation ITO) is a kind of N-type
Semiconductor material, the electric conductivity with semiconductor.The characteristic of ito thin film includes higher conductive capability, the reproduction of stronger light
Property and light transmission rate, stronger chemical stability, thermal stability, good etching homogeneity and suitable surface shape.
Further, since the leakage current of liquid crystal cell and TFT can cause the decline of pixel electrode voltage, and then liquid crystal is influenced
The display characteristics such as the contrast of display panel.In order to compensate for the pixel electrode voltage of decline, it can be arranged in array substrate and deposit
Storage is held.Storage capacitance is in parallel with liquid crystal capacitance, and a common voltage retention for improving liquid crystal cell, the load capacity of TFT is liquid
The sum of brilliant capacitor and storage capacitance.
Storage capacitance bus 300 is traditionally arranged to be metal layer storage electrode, and storage capacitance depends mainly on the size of storage
The width of electrode, increases the width of storage electrode, although being conducive to improve voltage retention, but also increases TFT simultaneously
Load capacity, and increase metal shading-area, the aperture opening ratio of pixel can be reduced.
In the present embodiment, since storage capacitance branch line 400 is arranged close to data line 200, when data line 200 breaks
When, the presence of storage capacitance branch line 400 makes it possible the amendment of data line 200.
In addition, by the way that storage capacitance branch line 400 is arranged, storage capacitance branch line 400 can be with storage capacitance in the present embodiment
Storage capacitance is collectively formed in bus 300, improves the voltage retention of liquid crystal cell.Meanwhile storage capacitance branch line 400 is by conductive, transparent
Material is made, and will not reduce the aperture opening ratio of pixel, under the demand of an equal amount of storage capacitance, due to being provided with storage electricity
Hold branch line 400, the width of storage capacitance bus 300 can correspond to reduction, therefore the metal shading-area of storage capacitance bus 300
It reduces, to improve the aperture opening ratio of pixel, improves the transmitance of pixel entirety.
Preferably, storage capacitance branch line 400 is the indium gallium zinc oxide IGZO after conductor.IGZO material is with zinc oxide
Material is matrix, in the conductor oxidate for wherein mixing indium and both transiting group metal elements of gallium composition.IGZO film material
Expect to be almost transparent for visible light, therefore, on the aperture opening ratio of pixel without influence.In the manufacturing process of array substrate,
When passivation layer PAS formation, it is filled with hydrogen, makes IGZO by semiconductor variable at conductor with can be convenient, to improve storage capacitance branch
The electric conductivity of line 400.It wherein, is 4-6 μm as the wire spoke of the IGZO of storage capacitance branch line 400.
Optionally, storage capacitance branch line 400 partly overlaps or completely overlapped with data line 200.Storage capacitance branch line 400
The problem that not only transmitance can be inhibited low, can also be improved product yield.
On the basis of the above embodiments, there is orientation dark line caused by light orientation, at least partly when pixel region 500 is shown
Scan line 100, data line 200 and storage capacitance bus 300 partly overlap with orientation dark line.The mentality of designing of the present embodiment is,
So that the partial region weight of scan line 100, data line 200 and storage capacitance bus 300 and orientation dark line in array substrate
It is folded, so that the route in array substrate will affect the orientation dark line partial occlusion of transmitance, while not influencing originally to penetrate
The higher region of rate, to improve the transmitance of liquid crystal display panel entirety.
It is understood that opening for pixel will not be reduced since storage capacitance branch line 400 is made of conductive transparent material
Mouth rate, therefore, the region other than orientation dark line should be arranged in the position of storage capacitance branch line 400.
Wherein, orientation dark line is ten thousand word lines, and ten thousand word lines include the cross dark line main body and position positioned at pixel central location
The upper branch dark line arranged along clockwise direction, right branch dark line, lower branch dark line and left branch dark line in pixel edge position.
Optionally, settable scan line 100 and storage capacitance the bus 300 upper branch with two neighboring pixel region 500 respectively
Dark line and the overlapping of lower branch dark line, also, data line 200 is Chong Die with the right branch dark line of two neighboring pixel region 500 and left branch dark line.
It sees on the whole, the scanned line 100 of the upper branch dark line and lower branch dark line in each pixel region and storage capacitance bus 300 hide
It covers, the right branch dark line and left branch dark line in each pixel region are covered by data line 200.Therefore, pixel can be effectively improved
Transmitance.
In a kind of preferred embodiment, with continued reference to shown in Fig. 2, the bending of data line 200 is arranged, data line 200 and phase
The right branch dark line and the overlapping of left branch dark line of adjacent two pixel regions 500, in other words, two adjacent data lines 200 are respectively and together
The right branch dark line of ten thousand word dark lines of one pixel region 500 and the overlapping of left branch dark line.In a pixel region, data line 200 is set
Be calculated as Z-shaped broken line, in two Z-shaped parallel edges wherein one for Chong Die with right branch dark line or left branch dark line.
There are many specific constructive forms of storage capacitance branch line 400, in the above-described embodiments the structure setting of data line 200
On the basis of, in the present embodiment, storage capacitance branch line 400 includes the first segment 41 and second segment 42 parallel with data line 200, and
One section 41 and second segment 42 are separately positioned on the inside for enclosing the adjacent two datas line 200 of pixel region 500.
Further, storage capacitance branch line 400 further includes third section 43, and third section 43 is located at a number for connecting
According to the first segment 41 and second segment 42 of 200 two sides of line.At this point, refering to what is shown in Fig. 2, storage capacitance branch line 400 is whole in " Z " type.
The area of storage capacitance branch line 400 is bigger, and the storage capacitance that can be shared is higher, then the metal layer of storage capacitance bus 300
Shading-area can be reduced accordingly, so as to effectively improve the transmitance of pixel entirety.
Optionally, third section 43 and storage capacitance bus 300 are completely overlapped or partly overlap.Third section 43 and storage
When capacitance bus 300 is overlapped, facilitate connection storage capacitance bus 300 and storage capacitance branch line 400.
In the present embodiment, storage capacitance bus 300 and storage capacitance branch line 400 are connected by conductive via 600.Conductive mistake
Hole 600 is also referred to as contact hole, and the etching between storage capacitance bus 300 and storage capacitance branch line 400 is arranged in conductive via 600
On barrier layer.
Array substrate provided in an embodiment of the present invention, by being arranged close to the storage capacitance branch line of data line, convenient for amendment
Broken data wire.Storage capacitance can be collectively formed with storage capacitance bus in storage capacitance branch line, and the voltage for improving liquid crystal cell is protected
Holdup.Meanwhile storage capacitance branch line is made of conductive transparent material, the aperture opening ratio of pixel will not be reduced, an equal amount of
Under the demand of storage capacitance, the width due to being provided with storage capacitance branch line, storage capacitance bus can correspond to reduction, therefore deposit
The metal shading-area for storing up capacitance bus reduces, to improve the aperture opening ratio of pixel, improves the transmitance of pixel entirety.Into
One step, by being overlapped scan line, data line and storage capacitance bus in array substrate with part orientation dark line, thus will
The regions shield of transmitance is influenced, the region for keeping original transmitance high is not influenced by route, is penetrated to improve the whole of panel
Rate.
Embodiment two
The embodiment of the present invention also provides a kind of liquid crystal display panel, comprising: array substrate and institute described in embodiment as above
State the color membrane substrates that array substrate is oppositely arranged and the liquid crystal being clamped between the array substrate and the color membrane substrates point
Sublayer.
The usual structure of liquid crystal display panel includes the polarizer, colored filter substrate, liquid set gradually from top to bottom
Crystal layer, array substrate and polarizer.Wherein, the effect of polarizer is that the light of control backlight only allows the light of specific direction logical
It crosses, filters out the light in other directions.It can be controlled by polarizer treated light by the twisting action of liquid crystal molecule
System projects the light luminance of display screen, so that the light luminance for projecting display screen is controlled, so that it is aobvious to control tft liquid crystal
The bright dark degree of display screen picture.Control liquid crystal torsion is the pixel voltage being added on liquid crystal, integrates TFT in array substrate and opens
Array is closed, pixel can accurately be controlled by TFT switch array.On colored filter substrate, a pixel segmentation
For red R, green G, blue tri- sub-pixels of B, the liquid crystal for playing light valve is former to the RGB tri- through colored filter substrate
The light of color is adjusted, available required colored display.
Wherein, array substrate includes: scan line 100, data line 200, storage capacitance bus 300, storage capacitance branch line
400；Multi-strip scanning line 100 and multiple data lines 200 are arranged in a crisscross manner, and adjacent two scan lines 100 and adjacent two numbers
According to surrounding pixel region 500 between line 200；Storage capacitance bus 300 is parallel to the setting of scan line 100 and across pixel region 500,
And storage capacitance bus 300 is electrically connected with the wherein scan line 100 for enclosing pixel region 500；400 edge of storage capacitance branch line
The direction of data line 200 extend, and be arranged close to data line 200, storage capacitance branch line 400 and the electricity of storage capacitance bus 300
Connection, and the storage capacitance branch line 400 is made of conductive transparent material.
Preferably, storage capacitance branch line 400 is the indium gallium zinc oxide IGZO after conductor.
Optionally, storage capacitance branch line 400 partly overlaps or completely overlapped with data line 200.
There is orientation dark line, at least partly scan line 100,200 and of data line caused by light orientation when pixel region 500 is shown
Storage capacitance bus 300 partly overlaps with orientation dark line.
Further, orientation dark line is ten thousand word dark lines, and ten thousand word dark lines include positioned at a left side for 500 marginal position of pixel region
Branch dark line and right branch dark line, data line 200 are Chong Die with the left branch dark line of two neighboring pixel region and right branch dark line.
Storage capacitance branch line 400 includes the first segment 41 and second segment 42 parallel with data line 200, first segment 41 and
It is separately positioned on the inside for enclosing the adjacent two datas line 200 of pixel region 500 for two section 42.
Further, storage capacitance branch line 400 further includes third section 43, and third section 43 is located at a number for connecting
According to the first segment 41 and second segment 42 of 200 two sides of line.
Specifically, storage capacitance bus 300 and storage capacitance branch line 400 are connected by conductive via 600.
Conductive via 600 is arranged on the etching barrier layer between storage capacitance bus 300 and storage capacitance branch line 400.
Liquid crystal display panel provided in an embodiment of the present invention, by the storage electricity for being arranged close to data line in array substrate
Hold branch line, convenient for amendment broken data wire, improves product yield.Storage capacitance branch line can be collectively formed with storage capacitance bus
Storage capacitance improves the voltage retention of liquid crystal cell.Meanwhile storage capacitance branch line is made of conductive transparent material, will not drop
The aperture opening ratio of low pixel, under the demand of an equal amount of storage capacitance, due to being provided with storage capacitance branch line, storage capacitance is total
The width of line can correspond to reduction, therefore the metal shading-area of storage capacitance bus reduces, to improve the opening of pixel
Rate improves the transmitance of pixel entirety.Further, by making scan line, data line and storage capacitance in array substrate
Bus is overlapped with part orientation dark line, to will affect the regions shield of transmitance, the region for keeping original transmitance high is not by line
The influence on road, to improve the whole transmitance of panel.
In the description of the present invention, it is to be understood that, used term " center ", " length ", " width ", " thickness
Degree ", " top ", " bottom end ", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outside" " axis
To ", the indicating positions such as " circumferential direction " or positional relationship be to be based on the orientation or positional relationship shown in the drawings, be merely for convenience of describing
The present invention and simplified description, rather than the position of indication or suggestion meaning or original part must have a particular orientation, with specific
Construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is at least two, such as two
It is a, three etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
It shall be understood in a broad sense, such as may be a fixed connection, may be a detachable connection, or be integrally formed；It can be mechanical connection,
It is also possible to be electrically connected or can communicate with each other；It can be directly connected, can also indirectly connected through an intermediary, it can be with
Make the connection inside two elements or the interaction relationship of two elements.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of array substrate characterized by comprising scan line, data line, storage capacitance bus, storage capacitance branch line；
The a plurality of scan line and a plurality of data line are arranged in a crisscross manner, and adjacent two scan lines and two adjacent
Pixel region is surrounded between data line；
The storage capacitance bus is parallel to scan line setting and across the pixel region, and the storage capacitance bus
It is electrically connected with the wherein scan line for enclosing the pixel region；
The storage capacitance branch line extends along the direction of the data line, and is arranged close to the data line, the storage electricity
Hold branch line to be electrically connected with the storage capacitance bus, and the storage capacitance branch line is made of conductive transparent material.
2. array substrate according to claim 1, which is characterized in that the storage capacitance branch line and the data line part
Overlapping is completely overlapped.
3. array substrate according to claim 2, which is characterized in that the storage capacitance branch line is the indium gallium after conductor
Zinc oxide IGZO.
4. array substrate according to claim 1-3, which is characterized in that the pixel region is matched when showing with light
To caused orientation dark line, at least partly described scan line, data line and storage capacitance bus and orientation dark line part weight
It is folded.
5. array substrate according to claim 4, which is characterized in that the orientation dark line is ten thousand word dark lines, ten thousand word
Dark line includes the left branch dark line and right branch dark line positioned at the pixel region marginal position, the data line and the two neighboring picture
The left branch dark line in plain area and the overlapping of right branch dark line.
6. array substrate according to claim 5, which is characterized in that the storage capacitance branch line includes and the data line
Parallel first segment and second segment, the first segment and second segment are separately positioned on adjacent two institutes for enclosing the pixel region
State the inside of data line.
7. array substrate according to claim 6, which is characterized in that the storage capacitance branch line further includes third section, institute
Third section is stated for connecting the first segment and the second segment for being located at the data line two sides.
8. array substrate according to claim 1, which is characterized in that the storage capacitance bus and the storage capacitance branch
Line is connected by conductive via.
9. array substrate according to claim 8, which is characterized in that the conductive via setting is total in the storage capacitance
On etching barrier layer between line and the storage capacitance branch line.
10. a kind of liquid crystal display panel characterized by comprising as the described in any item array substrates of claim 1-9, with
The color membrane substrates that the array substrate is oppositely arranged and the liquid crystal being clamped between the array substrate and the color membrane substrates
Molecular layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811366329.4A CN109254464A (en) | 2018-11-16 | 2018-11-16 | array substrate and liquid crystal display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811366329.4A CN109254464A (en) | 2018-11-16 | 2018-11-16 | array substrate and liquid crystal display panel |
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| CN109254464A true CN109254464A (en) | 2019-01-22 |
Family
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| CN201811366329.4A Pending CN109254464A (en) | 2018-11-16 | 2018-11-16 | array substrate and liquid crystal display panel |
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| CN111290185A (en) * | 2020-03-31 | 2020-06-16 | 成都中电熊猫显示科技有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN112327554A (en) * | 2020-11-20 | 2021-02-05 | 成都中电熊猫显示科技有限公司 | Array substrate and display panel |
| CN112526782A (en) * | 2020-12-07 | 2021-03-19 | 成都中电熊猫显示科技有限公司 | Liquid crystal display panel and manufacturing method thereof |
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