CN109253807B - Low-noise single photon detection chip and system based on standard integrated circuit process - Google Patents
Low-noise single photon detection chip and system based on standard integrated circuit process Download PDFInfo
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Abstract
The invention provides a low-noise single photon detection chip and a system based on a standard integrated circuit process. The method is characterized in that: the low-noise single photon detection system consists of a light source 1, a bias circuit 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33. The invention can be used for measuring the ultra-weak light, and can be widely used in the fields of laser radar, DNA sequencing, quantum key distribution, medical imaging and the like.
Description
(I) technical field
The invention relates to a low-noise single photon detection chip and a system based on a standard integrated circuit process, which can be used for detecting extremely weak light such as laser radar, DNA sequencing, quantum key distribution, medical imaging and the like, and belongs to the technical field of photoelectric detection.
(II) background of the invention
The single photon detection technology is a photoelectric detection technology, and the principle is that the photoelectric effect is utilized to count the incident single photon so as to realize the detection of an extremely weak signal. It is the core of very low light measurements such as laser ranging, DNA sequencing, quantum key distribution, lidar and medical imaging. With the progress of semiconductor process technology and the improvement of the design level of integrated circuits, it is possible to design a Single Photon avalanche diode (Single Photon avalanche diode) and integrate the Single Photon avalanche diode and related integrated circuits such as an avalanche event sensing circuit, a quenching circuit, a back-end signal processing circuit and the like on the same chip by adopting a standard integrated circuit process. Compared with the traditional single photon detection device such as a Photomultiplier Tube (PMT) or a Microchannel plate (MCP), the product has smaller volume and lower power consumption when operated under lower bias voltage, is insensitive to electromagnetic noise, has high integration level, low cost and good repeatability, and has wide application prospect.
In photon detection/imaging systems based on single photon avalanche diodes, the system detects and counts excited avalanche events by the generation of hole electrons inside the single photon avalanche diode. Avalanche breakdown events in single photon avalanche diodes are not only excited by photon absorption but may also be excited by other factors. Avalanche events that are excited in the absence of light are independent of photon absorption and the counting of these avalanche events is called dark counting. Dark count rate is an important parameter of single photon avalanche diodes, and a high dark count rate can reduce the signal-to-noise ratio of a single photon system, increase the system bit error rate, increase the integration (exposure) time required by an imaging system, and reduce detection sensitivity. Therefore, the dark count rate in single photon avalanche diodes needs to be reduced as much as possible.
In a standard integrated circuit process, a foundry has a fixed standard for the doping concentration of each layer, and has a certain limit (for example, metal density) to design rules, which results in that a depletion layer of a single photon avalanche diode prepared in the standard integrated circuit process is narrow, is easily affected by thermal excitation and tunneling carriers, and has a high dark count rate. In addition, higher impurity concentrations and consequently higher dark counts are produced around the photosensitive region of a single photon avalanche diode due to the lack of high temperature annealing and defect removal process steps.
In order to reduce the noise of the single photon detection system, researchers design single photon avalanche diode chips with different structures in different standard integrated circuit processes so as to reduce the dark counting rate and improve the signal-to-noise ratio of the chips to single photon detection. The photosensitive area of R.K.Henderson is 3.1 μm prepared by 90nm technology2The single photon avalanche diode of (1) has a dark count of 250Hz (R.K. Henderson, et al., "A3 × 3,5 μm pitch, 3-transducer single photon avalanche diode with integrated 11V bias generation in 90nmCMOS technology," IEEE International Electron Devices Measuring (IEDM), pp.14.2.1-14.2.4. Dec.2010.; E.A.G.Webster prepared by using p-epi layer and deep n layer in 90nm CMOS process)The well layer is used to form a single photon avalanche diode, and the p-epitaxial layer is used to form a guard ring, and the low doping of the guard ring is used to relieve the tunneling effect. Their design reduces the dark count rate of the Device to some extent (E.A.G.Webster, et al, "A single-photon imaging technology with 90-nm CMOS imaging technology with 44% photon detection efficiency at 690nm," IEEEElectron devices letters, 33(5): 694-. Although the dark count rate of the single photon detector chip is relieved to a certain extent through structural optimization, the common dark count rate still reaches dozens to hundreds of Hz of single photon avalanche diodes, so that the overall noise is still considerable when the single photon avalanche diode array is applied. In addition, a high-time-resolution low-noise single photon detector with synchronous optical pulses was disclosed in 2010 (Chinese patent: 201010292821.9), and an optical delayer and a photoelectric conversion module are adopted to convert optical signals into Gaussian electrical signals to be used as gate pulse optical signals, so that noise caused by a capacitance effect of an avalanche diode is reduced, and the signal-to-noise ratio is improved; zhao Yan equals 2015, and discloses a gate-controlled differential single photon detection system (Chinese patent: 201510413840.5), which reduces the peak noise and the post-pulse effect of the system and improves the detection frequency through a gate-controlled feedback control mechanism; the Huangcatalpi is equal to 2016 and discloses an ultrashort pulse gated high-speed low-noise single-photon detector (Chinese patent: 201710165360.0). The ultrashort pulse signal with adjustable pulse width and adjustable amplitude is used as a gate control signal, so that the working frequency of the single-photon detector adopting a balance scheme is expanded, the effective pulse width of the gate signal is reduced, the false counting can be effectively reduced, the high suppression ratio of peak noise can be still ensured in high-speed detection, and the performance of the detector is improved. The drawbacks of these designs are: 1. the described system can only be used for single photon avalanche diodes working in a gate control mode, and the single photon detector operating in the gate control mode is easy to cause loss of effective photon counting and system detection errors in applications where the arrival time of signal photons is unknown, such as light intensity detection, range detection, laser radar and fiber-optic time-domain reflectometer; 2. the described system is only suitable for single-photon snowIf the avalanche diode is used for a single photon avalanche diode array, a related system needs to be designed for each single photon avalanche diode in the array, so that the volume and the complexity of the single photon avalanche diode array system are greatly increased, and the detection efficiency of a detector system is reduced; 3. the capacitor module (or PIN photoelectric detector) used for matching with the single photon avalanche diode is not arranged on the same chip as the single photon avalanche diode, when incident light enters the single photon avalanche diode and triggers an avalanche effect, the temperature of the single photon avalanche diode changes, and internal equivalent parameters (such as capacitance and resistance) of the single photon avalanche diode also change, so that the single photon avalanche diode cannot be matched with the used equivalent module (capacitor or PIN photoelectric detector), and system errors are caused.
In order to solve the problems, the invention discloses a low-noise single photon detection chip and a system based on a standard integrated circuit process, which can be used for detecting extremely weak light such as laser radar, DNA sequencing, quantum key distribution, medical imaging and the like. In the single photon detection chip, the light sensing parts of one or more single photon avalanche diodes in the single photon avalanche diode array are covered by the metal layer, so that the single photon avalanche diode array can operate in a dark environment and only provides dark counts. The single photon avalanche diode operating in the dark environment has the same dark counting rate due to the fact that the structure, the size and the operating parameters of the single photon avalanche diode are the same as those of the single photon avalanche diode operating in the normal mode on the same chip. This dark count is used to reduce the overall system noise (the dark count rate can theoretically be reduced to close to 0) for improving the sensitivity and detection dynamic range of the system. The larger the number of the single photon avalanche diode arrays on the chip is, the more obvious the noise reduction effect is. The invention can be applied to the single photon avalanche diode working in any mode, including a gating mode, a passive quenching mode and an active quenching mode, thereby greatly improving the application range of the diode. The system only needs to process (1 or more) one part of the single photon avalanche diode array, and does not need to process all the single photon avalanche diodes independently and design the system, so that the system volume and complexity are reduced, meanwhile, the photon detection efficiency is improved, and the system is more suitable for the single photon detector array system. All single photon avalanche diodes for single photon detection in the system are positioned on the same chip, have the same structure, the same size and work under the same bias voltage, so that the single photon avalanche diodes have the same (or similar) working temperature and performance, and the noise reduction effect of the single photon avalanche diodes cannot be influenced by the temperature change of the single photon detector chip. In addition, the method can be completed under the standard integrated circuit process (for example, the light-sensitive part of the single photon avalanche diode is covered by a metal layer), and meanwhile, the method can be suitable for single photon detector array chips with different structures, so that the method can be simultaneously carried out with other optimization means such as single photon avalanche diode structure optimization and the like, and the performance of a single photon detection system is further improved.
Disclosure of the invention
The invention aims to provide a low-noise single photon detection system which comprises a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 comprises a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33.
The purpose of the invention is realized as follows:
the bias module 2 generates a controllable reverse bias voltage and outputs the controllable reverse bias voltage to the single photon detection chip 3, all single photon avalanche diodes in the single photon detection chip 3 are biased under the same voltage, light emitted by the light source 1 is incident to the single photon detection chip 3, the single photon avalanche diode 31 in the single photon detection chip 3, which operates in a normal mode, outputs avalanche event electric pulses including noise excitation and photon excitation, and converts the avalanche event electric pulses into standard transistor-transistor logic level (TTL) signals through the avalanche event detection circuit array 33 and outputs the standard transistor-transistor logic level (TTL) signals to the signal processing system 4, the single photon avalanche diode 32 in the single photon detection chip 3, which operates in a dark environment, only outputs the avalanche event electric pulses excited by the noise and converts the avalanche event electric pulses into TTL signals through the avalanche event detection circuit array 33 and outputs the TTL signals to the signal processing system 4, and the signal processing system 4 performs photon counting, and finally, giving a detection result.
The light source 1 in the system may be one of various optical signals such as a fluorescence excitation light signal in a fluorescence detection system, a rayleigh reflection light signal in an optical time domain reflection system, a communication signal in a communication system, an interference signal in an optical fiber sensor system, and a reflection signal in a surface plasmon resonance detection system.
The single photon detection chip 3 in the system is a chip based on a standard integrated circuit process, the manufacturing process can be any one of a standard complementary metal oxide semiconductor process (CMOS), a bipolar complementary metal oxide semiconductor process (BiCMOS), a silicon-on-insulator complementary metal oxide semiconductor process (SOI CMOS) and a CMOS image sensor process (CIS), and the process size can be any one of 0.8 mu m, 0.35 mu m, 0.18 mu m, 0.13 mu m, 90nm, 65nm and 45 nm. The structure of the single photon avalanche diode in the single photon detection chip 3 can be formed by some of different doped layers such as P +, n +, nwell, pwell, Deep-nwell, P-epitaxial and P-subtrate in a standard integrated circuit process, and the shape can be one of a perfect circle, an ellipse, a square, a rectangle and the like.
The light detection part of the single photon detection chip 3 is composed of a single photon avalanche diode array, all single photon avalanche diodes in the array are positioned on the same chip, have the same structure and the same size, and work under the same bias voltage and temperature. Selecting N single photon avalanche diodes (N is more than or equal to 1) in the array, covering a photosensitive area by using a metal layer in a standard integrated circuit process, enabling the photosensitive area to operate in a dark environment to form the single photon avalanche diodes 32 which operate in the dark environment, only outputting noise-excited avalanche event electric pulses, converting the noise-excited avalanche event electric pulses into TTL signals through an avalanche event detection circuit array 33 and outputting the TTL signals to a signal processing system 4; the other single photon avalanche diodes work in normal mode, and the single photon avalanche diodes 31 operating in normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into TTL signals by the avalanche event detection circuit array 33 to be output to the signal processing system 4. The avalanche event detection circuit array 33 in the single photon detection chip 3 may be any one of an amplitude discriminator circuit, a current-voltage conversion circuit, a voltage comparison circuit, and a quenching circuit.
The signal processing system 4 may be any one of a microcontroller, a Field Programmable Gate Array (FPGA) and a computer based signal processing system. The signal processing system 4 receives the TTL signal output by the avalanche event detection circuit array 33 in the single photon detection chip 3, and calculates to obtain the pulse count rates output by the single photon avalanche diode 31 operating in the normal mode and the single photon avalanche diode 32 operating in the dark environment, respectively. The average counting rate of all the single photon avalanche diodes 31 operating in the normal mode is obtained by removing the average counting rate of all the single photon avalanche diodes 32 operating in the dark environment, and the product of the average counting rate of all the single photon avalanche diodes 31 operating in the normal mode and the number of the single photon avalanche diodes 31 operating in the normal mode is the output photon counting rate of the whole detection system after the noise is removed. If the number of the single photon avalanche diodes 3 in the single photon detection chip 3 which operate in the normal mode is M, the counting rate of the output pulse of each single photon avalanche diode is CR respectively1、CR2、CR3...CRMThe number of single photon avalanche diodes 32 operating in dark environment is N, and the pulse count of each is CRD1、CRD2、 CRD3...CRDNThen, the output photon Count Rate (CR) of the whole single photon detection system after removing noise is:
(IV) description of the drawings
FIG. 1 is a schematic diagram of a low-noise single photon detection chip and a system thereof based on a standard integrated circuit process. The low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33.
FIG. 2 is a diagram of a low-noise single photon detection chip and a system thereof based on a standard integrated circuit process. The low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33. The light detection part of the single photon detection chip 3 in the system is composed of a 1 x 6 single photon avalanche diode array, 1 single photon avalanche diode in the array is covered by a metal layer in the standard integrated circuit process, so that the single photon avalanche diode can operate in a dark environment to form a single photon avalanche diode 32 which operates in the dark environment, only an avalanche event electric pulse excited by noise is output, and the avalanche event electric pulse is converted into a TTL signal through an avalanche event detection circuit array 33 and is output to the signal processing system 4; the other single photon avalanche diodes work in normal mode, and the single photon avalanche diodes 31 operating in normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into TTL signals by the avalanche event detection circuit array 33 to be output to the signal processing system 4.
Figure 3 is a schematic diagram of a normal mode operating single photon avalanche diode and a dark environment operating single photon avalanche diode in a standard integrated circuit process. The PN junction (avalanche multiplication region) of a single photon avalanche diode is formed between a p + layer and an nwell layer, and pwell is injected around the p + region in the structure to form a lower doped guard ring around the multiplication region to isolate high electric fields. The photosensitive region of the single photon avalanche diode 32 operating in dark environment is covered by a metal layer (metal3) to make it operate in dark environment, and only outputs dark count without generating avalanche event triggered by absorption of photon. The statistics of dark counts are used for reducing the noise of a detection system.
FIG. 4 is a diagram of a low-noise single photon detection chip and a system thereof based on a standard integrated circuit process. The low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33. The light detection part of the single photon detection chip 3 in the system is composed of a 1 x 10 single photon avalanche diode array, and 10 single photon avalanche diodes in the array are positioned on the same chip, have the same structure, have the same size and work under the same bias voltage and temperature. Selecting 3 single photon avalanche diodes in the array, covering the single photon avalanche diodes by using a metal layer in a standard integrated circuit process, enabling the single photon avalanche diodes to operate in a dark environment to form the single photon avalanche diodes 32 which operate in the dark environment, only outputting avalanche event electric pulses excited by noise, converting the avalanche event electric pulses into TTL signals through an avalanche event detection circuit array 33 and outputting the TTL signals to a signal processing system 4; the other single photon avalanche diodes work in normal mode, and the single photon avalanche diodes 31 operating in normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into TTL signals by the avalanche event detection circuit array 33 to be output to the signal processing system 4.
(V) detailed description of the preferred embodiments
The invention is further illustrated below with reference to specific examples.
The first embodiment is as follows:
figure 2 shows an embodiment of a low noise single photon detection chip and system thereof based on standard integrated circuit technology. The low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33. The bias module 2 generates a controllable reverse bias voltage and outputs the controllable reverse bias voltage to the single photon detection chip 3, all single photon avalanche diodes in the single photon detection chip 3 are biased under the same voltage, light emitted by the light source 1 is incident to the single photon detection chip 3, the single photon avalanche diode 31 in the single photon detection chip 3, which operates in a normal mode, outputs avalanche event electric pulses including noise excitation and photon excitation, and converts the avalanche event electric pulses into standard transistor-transistor logic level (TTL) signals through the avalanche event detection circuit array 33 and outputs the standard transistor-transistor logic level (TTL) signals to the signal processing system 4, the single photon avalanche diode 32 in the single photon detection chip 3, which operates in a dark environment, only outputs the avalanche event electric pulses excited by the noise and converts the avalanche event electric pulses into TTL signals through the avalanche event detection circuit array 33 and outputs the TTL signals to the signal processing system 4, and the signal processing system 4 performs And finally, giving a detection result.
The light detection part of the single photon detection chip 3 is composed of a 1 x 6 single photon avalanche diode array, and 6 single photon avalanche diodes in the array are positioned on the same chip, have the same structure, have the same size and work under the same bias voltage and temperature. Selecting 1 single photon avalanche diode in the array, covering with a metal layer in the standard integrated circuit process, making it operate in dark environment to form a single photon avalanche diode 32 operating in dark environment, only outputting noise-excited avalanche event electric pulse, converting into TTL signal by avalanche event detection circuit array 33, and outputting to signal processing system 4; the other single photon avalanche diodes work in normal mode, and the single photon avalanche diodes 31 operating in normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into TTL signals by the avalanche event detection circuit array 33 to be output to the signal processing system 4.
The structure of a normal mode operating single photon avalanche diode 31 and a dark environment operating single photon avalanche diode 32 under standard integrated circuit technology is shown in figure 3. The PN junction (avalanche multiplication region) of a single photon avalanche diode is formed between a p + layer and an nwell layer, and pwell is injected around the p + region in the structure to form a lower doped guard ring around the multiplication region to isolate high electric fields. The photosensitive region of the single photon avalanche diode 32 operating in a dark environment is covered by a Metal layer (Metal3) so that the single photon avalanche diode can operate in the dark environment, does not generate avalanche events triggered by photon absorption, and only outputs dark counts. The statistics of dark counts are used for reducing the noise of a detection system.
Signal stationThe physical system 4 receives the TTL signal output by the avalanche event detection circuit array 33 in the single photon detection chip 3, and calculates to obtain the pulse count rates output by the single photon avalanche diode 31 operating in the normal mode and the single photon avalanche diode 32 operating in the dark environment, respectively. The pulse counting rates of the output pulses of the 5 single photon avalanche diodes operating in the normal mode in the array are respectively CR1, CR2, CR3, CR4 and CR5, and the pulse counting rate of the output pulses of the 1 single photon avalanche diode operating in the dark environment is CRD1. The noise-reduced integral output photon Count Rate (CR) obtained by the signal processing system 4s) Comprises the following steps:
example two:
figure 4 shows an embodiment of a low noise single photon detection chip and system thereof based on standard integrated circuit technology. The low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33. The bias module 2 generates a controllable reverse bias voltage and outputs the controllable reverse bias voltage to the single photon detection chip 3, all single photon avalanche diodes in the single photon detection chip 3 are biased under the same voltage, light emitted by the light source 1 is incident to the single photon detection chip 3, the single photon avalanche diode 31 in the single photon detection chip 3, which operates in a normal mode, outputs avalanche event electric pulses including noise excitation and photon excitation, and converts the avalanche event electric pulses into standard transistor-transistor logic level (TTL) signals through the avalanche event detection circuit array 33 and outputs the standard transistor-transistor logic level (TTL) signals to the signal processing system 4, the single photon avalanche diode 32 in the single photon detection chip 3, which operates in a dark environment, only outputs the avalanche event electric pulses excited by the noise and converts the avalanche event electric pulses into TTL signals through the avalanche event detection circuit array 33 and outputs the TTL signals to the signal processing system 4, and the signal processing system 4 performs And finally, giving a detection result.
The light detection part of the single photon detection chip 3 is composed of a 1 x 10 single photon avalanche diode array, and 10 single photon avalanche diodes in the array are positioned on the same chip, have the same structure, have the same size and work under the same bias voltage and temperature. Selecting 3 single photon avalanche diodes in the array, covering the single photon avalanche diodes by using a metal layer in a standard integrated circuit process, enabling the single photon avalanche diodes to operate in a dark environment to form the single photon avalanche diodes 32 which operate in the dark environment, only outputting avalanche event electric pulses excited by noise, converting the avalanche event electric pulses into TTL signals through an avalanche event detection circuit array 33 and outputting the TTL signals to a signal processing system 4; the other single photon avalanche diodes work in normal mode, and the single photon avalanche diodes 31 operating in normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into TTL signals by the avalanche event detection circuit array 33 to be output to the signal processing system 4.
The signal processing system 4 receives the TTL signal output by the avalanche event detection circuit array 33 in the single photon detection chip 3, and calculates to obtain the pulse count rates output by the single photon avalanche diode 31 operating in the normal mode and the single photon avalanche diode 32 operating in the dark environment, respectively. The pulse counting rates of the output pulses of the 7 single photon avalanche diodes operating in the normal mode in the array are respectively CR1, CR2, CR3, CR4, CR5, CR6 and CR7, and the pulse counting rate of the output pulses of the 3 single photon avalanche diodes operating in the dark environment is CRD1， CRD2And CRD3. The noise-reduced integral output photon Count Rate (CR) obtained by the signal processing system 4s) Comprises the following steps:
Claims (4)
1. a low-noise single photon detection chip and system based on standard integrated circuit technology is characterized in that: the low-noise single photon detection system consists of a light source 1, a bias module 2, a single photon detection chip 3 and a signal processing system 4, wherein the single photon detection chip 3 consists of a single photon avalanche diode 31 which operates in a normal mode, a single photon avalanche diode 32 which operates in a dark environment and an avalanche event detection circuit array 33; in the system, a bias module 2 generates controllable reverse bias voltage and outputs the controllable reverse bias voltage to a single photon detection chip 3, all single photon avalanche diodes in the single photon detection chip 3 are biased under the same voltage, light emitted by a light source 1 is incident to the single photon detection chip 3, a single photon avalanche diode 31 in the single photon detection chip 3, which operates in a normal mode, outputs avalanche event electric pulses including noise excitation and photon excitation, and converts the avalanche event electric pulses into standard transistor-transistor logic level signals through an avalanche event detection circuit array 33 and outputs the standard transistor-transistor logic level signals to a signal processing system 4, a single photon avalanche diode 32 in the single photon detection chip 3, which operates in a dark environment, only outputs the noise-excited avalanche event electric pulses and converts the noise-excited avalanche event electric pulses into the standard transistor-transistor logic level signals through the avalanche event detection circuit array 33, the signal processing system 4 performs photon counting rate calculation and noise reduction calculation and processing on the standard transistor-transistor logic level signal output by the single photon detection chip 3, and finally gives a detection result.
2. The low-noise single photon detection chip and system based on the standard integrated circuit process as claimed in claim 1, wherein: the light source 1 in the system is one of a fluorescence excitation light signal in a fluorescence detection system, a rayleigh reflected light signal in an optical time domain reflection system, a communication signal in a communication system, an interference signal in an optical fiber sensor system, and a reflection signal of a surface plasmon resonance detection system.
3. The low-noise single photon detection chip and system based on the standard integrated circuit process as claimed in claim 1, wherein: the single photon detection chip 3 is a chip based on a standard integrated circuit process, the manufacturing process is any one of a standard complementary metal oxide semiconductor process, a bipolar complementary metal oxide semiconductor process, a silicon-on-insulator complementary metal oxide semiconductor process and a standard complementary metal oxide semiconductor process image sensor process, and the process size is any one of 0.8 mu m, 0.35 mu m, 0.18 mu m, 0.13 mu m, 90nm, 65nm and 45 nm; the light detection part of the single photon detection chip 3 is composed of a single photon avalanche diode array, all single photon avalanche diodes in the array are positioned on the same chip, have the same structure and the same size and work under the same bias voltage and temperature; selecting N single photon avalanche diodes in the array, covering the photosensitive area by a metal layer in a standard integrated circuit process, enabling the photosensitive area to operate in a dark environment to form the single photon avalanche diodes 32 which operate in the dark environment, only outputting avalanche event electric pulses excited by noise, converting the avalanche event electric pulses into standard transistor-transistor logic level signals through an avalanche event detection circuit array 33 and outputting the standard transistor-transistor logic level signals to a signal processing system 4; the other single photon avalanche diodes work in a normal mode, and the single photon avalanche diodes 31 which run in the normal mode output avalanche event electric pulses including noise excitation and photon excitation, and are converted into standard transistor-transistor logic level signals through an avalanche event detection circuit array 33 to be output to the signal processing system 4; the avalanche event detection circuit array 33 in the single photon detection chip 3 is any one of an amplitude discriminator circuit, a current-voltage conversion circuit, a voltage comparison circuit, and a quenching circuit.
4. The low-noise single photon detection chip and system based on the standard integrated circuit process as claimed in claim 1, wherein: the signal processing system 4 is any one of signal processing systems based on a microcontroller, a field programmable gate array and a computer; the signal processing system 4 receives a standard transistor-transistor logic level signal output by the avalanche event detection circuit array 33 in the single photon detection chip 3, and pulse counting rates output by the single photon avalanche diode 31 operating in a normal mode and the single photon avalanche diode 32 operating in a dark environment are respectively obtained through calculation; the average counting rate of all the single photon avalanche diodes 31 operating in the normal mode is obtained by removing the average counting rate of all the single photon avalanche diodes 32 operating in the dark environment, and the product of the average counting rate of all the single photon avalanche diodes 31 operating in the normal mode and the number of the single photon avalanche diodes 31 operating in the normal mode is the output photon counting rate of the whole detection system after the noise is removed.
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