CN109244012B - Tool and method for cleaning CMOS image sensor circuit - Google Patents
Tool and method for cleaning CMOS image sensor circuit Download PDFInfo
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- CN109244012B CN109244012B CN201811042993.3A CN201811042993A CN109244012B CN 109244012 B CN109244012 B CN 109244012B CN 201811042993 A CN201811042993 A CN 201811042993A CN 109244012 B CN109244012 B CN 109244012B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
The invention discloses a tool and a method for cleaning a CMOS image sensor circuit, and belongs to the field of CMOS image sensor circuit packaging. Compared with the traditional method, the method can quickly and effectively remove dirt, dust and other forms of redundancy attached to the surfaces of the chip, the shell and the glass cover plate, solves the problem of low reliability caused by the fact that a sensitive part is shielded to form a dead point due to the redundancy in the CMOS image sensor circuit, and does not influence the bonding strength of a bonding wire in the circuit. The method can effectively remove the redundant materials in the CMOS image sensor circuit, ensures the reliability of the CMOS image sensor circuit after packaging, effectively shortens the production period, and has simple and practical cleaning method, easy realization and strong operability.
Description
Technical Field
The invention relates to a tool and a method for cleaning a CMOS image sensor circuit, and belongs to the technical field of ceramic packaging of CMOS image sensor circuits.
Background
Compared with the traditional CCD imaging technology, the CMOS image sensor has the advantages of easy system integration, low power consumption, high imaging speed, wide response range, strong radiation resistance, low cost and the like, and the prospect of the CMOS camera is very wide.
The surface of a chip of the CMOS image sensor circuit is provided with the micro lens, the surface is uneven, and if the surplus objects exist, the surplus objects easily enter the pit, so that one or a plurality of pixels can be disabled. Therefore, CMOS image sensor circuits are extremely sensitive to the excess, and must be properly cleaned before the circuits are capped to remove as much as possible the contamination on the chip surface, the inside of the package, and the glass cover plate. The existing cleaning mode is generally manual scrubbing, which is very easy to cause chip surface damage and reduce the performance of the CMOS image sensor circuit.
Aerospace-level devices face complex and variable and extremely harsh working environments, and a CMOS image sensor circuit must ensure high reliability, so that the requirement on the cleanliness of the interior of the circuit is extremely high, and a cleaning process method must be optimized.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to overcome the defects of the prior art, the tool and the method for cleaning the CMOS image sensor circuit are provided, the CMOS image sensor circuit is cleaned, the cleanliness of the interior of the circuit is guaranteed, a chip and a bonding wire in the circuit are not damaged, and the circuit performance is guaranteed.
The technical solution of the invention is as follows:
a tool for cleaning a CMOS image sensor circuit comprises a scribing material ring, a UV film and a support; the support is a hollow four-pin supporting structure, the scribing material ring is placed on the support, the UV film is attached to the scribing material ring, and the upper surface of the UV film is used for fixing the CMOS image sensor circuit.
The UV film is a film with glue on one surface, the base material is polyolefin, and the glue layer material is acrylic acid.
The bonding force of the UV film relative to the CMOS image sensor circuit ceramic shell is 4900-7600 mn/25 mm.
The UV film thickness is 150-300 um, and the tensile strength is 22-33 MPa.
The method for cleaning the CMOS image sensor circuit by using the tool comprises the following steps:
(1) fixing a circuit: fixing the CMOS image sensor circuit on a tool;
(2) circuit transmission: taking down the whole structure of the scribing sheet material ring, the UV film and the CMOS image sensor circuit which are fixed together from the bracket and placing the whole structure on a workbench of a cleaning device;
(3) circuit cleaning: vacuum adsorbing the integral structure in the step (2) on a workbench of a cleaning device, and cleaning the circuit by using a water-gas mixture;
(4) and (5) cleaning and drying.
The method for fixing the CMOS image sensor circuit on the tool in the step (1) comprises the following steps:
(7.1) placing one side of the circuit on the UV film;
(7.2) with the edge as a rotating shaft, completely flatly placing the circuit on the UV film in a rotating mode;
and (7.3) scraping the lower surface of the UV film from one end of the circuit to the other end of the circuit by using a scraper to remove bubbles which are visible to naked eyes on the contact surface of the circuit and the UV film.
And (3) when the integral structure is placed on the workbench of the cleaning device in the step (2), the included angle between the circuit surface of the CMOS image sensor and the water-air mixture spray head above the workbench of the cleaning device is 80-83 degrees.
In the step (3), the water-gas mixture comprises deionized water and compressed air.
In the step (3), the pressure intensity of the deionized water and the pressure intensity of the compressed air are both 0.5-0.6 Mpa, the water resistance of the deionized water is 15-18 MOmega, the rotating speed of a workbench of the cleaning device is 350-400 r/min, and the cleaning time is 2-2.5 min.
In the step (4), the pressure of the deionized water in the water-gas mixture is 0Mpa, the pressure of the compressed air is 0.6-0.8 Mpa, the rotating speed of a workbench of the cleaning device is 400-450 r/min, and the drying time is 2.5-3 min.
Compared with the prior art, the invention has the advantages that:
(1) according to the invention, high-pressure deionized water and compressed air are mixed and then are sprayed out at a high speed through the special spray head, the mixture is rapidly disintegrated and forms strong shock waves to take away the redundancy when reaching the surface of the circuit to be cleaned, compared with the traditional manual scrubbing method, the cleanliness of the circuit after cleaning is higher, and the problem of low reliability caused by dead spots due to shielding of a photosensitive part due to the redundancy in the CMOS image sensor circuit is solved.
(2) According to the invention, by controlling the cleaning process parameters, the chip and the bonding wire in the circuit are prevented from being damaged in the cleaning process, the bonding strength of the bonding wire is prevented from being reduced, and the circuit performance is effectively ensured.
(3) The cleaning method can complete circuit cleaning within five minutes, can meet the requirement of the cleanliness inside the image sensor circuit, effectively shortens the production period, and is simple, practical, easy to implement and strong in operability.
Drawings
FIG. 1 is a schematic view of the tooling of the present invention;
FIG. 2 is a schematic view of the overall structure;
fig. 3 is a flow chart of circuit cleaning of the CMOS image sensor.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in FIG. 1, the invention designs a tool for cleaning a CMOS image sensor circuit, which comprises a scribing material ring 1, a UV film 2 and a bracket 3; support 3 is hollow four-legged bearing structure, and scribing material ring 1 is placed again on support 3, and UV membrane 2 is attached on scribing material ring 1. The UV film 2 is a thin film with glue on one surface, the base material is polyolefin, and the glue layer material is acrylic acid. The thickness of the UV film 2 is 150-300 um. The bonding force of the UV film 2 relative to the CMOS image sensor circuit ceramic shell is 4900-7600 mn/25 mm. The tensile strength of the UV film 2 is 22-33 MPa.
As shown in fig. 3, a method for cleaning a CMOS image sensor circuit includes the following specific steps:
(1) fixing a circuit: the CMOS image sensor circuit is fixed on a tool under the environment that the temperature is 20-30 ℃ and the humidity is 35% -45%, and the method comprises the following steps:
placing one side of the circuit on the UV film; the circuit is completely flatly arranged on the UV film in a rotating mode by taking the edge as a rotating shaft; and (3) scraping the lower surface of the UV film from one end of the circuit to the other end of the circuit by using a scraper to remove bubbles which are visible to naked eyes on the contact surface of the circuit and the UV film.
(2) Circuit transmission: and (3) removing the whole structure of the scribing material ring, the UV film and the CMOS image sensor circuit which are fixed together from the support, wherein the schematic diagram of the whole structure is shown in figure 2. The cleaning device is placed on a workbench of the cleaning device, and when the cleaning device is placed, the included angle between the circuit surface of the CMOS image sensor and a water-air mixture spray head above the workbench of the cleaning device is 80-83 degrees, so that impact force can be guaranteed to rapidly take away surplus materials.
(3) And (2) circuit cleaning, namely vacuum adsorbing the integral structure on a workbench of a cleaning device, cleaning the circuit by using a water-gas mixture, wherein the rotating speed of the workbench of the cleaning device in the cleaning process is 350-400 r/min, the cleaning time is 2-2.5 min, the water-gas mixture comprises deionized water and compressed air, the pressure intensity of the deionized water and the pressure intensity of the compressed air in the water-gas mixture are both 0.5-0.6 MPa, and the water resistance of the deionized water is 15-18M omega. Tests prove that the impact force is moderate due to the pressure of the deionized water and the compressed air, the excess can be taken away quickly, and the chip and the bonding wire in the circuit cannot be damaged. The water resistance of the deionized water is 15-18M omega, so that acid and alkali impurities can be prevented from being doped in the deionized water, and the chip in the circuit can not be corroded in the cleaning process.
(3) And (3) drying after cleaning: the rotating speed of a workbench of the cleaning device in the drying process is 400-450 r/min, the drying time is 2.5-3 min, the pressure of deionized water in the water-gas mixture is 0MPa, and the pressure of compressed air is 0.6-0.8 MPa.
Example (b):
the tooling is processed according to the invention. Under the environment that the temperature is 23 ℃ and the humidity is 40%, the anti-static wristband and the brand-new finger stall are well arranged, fingers hold the edge of the circuit ceramic, the circuit is stably taken up, the fingers are prevented from slipping into the circuit cavity and falling off, and the circuit is integrally placed on the UV film supported by the scribing material ring in a rotating mode by taking one side of the bottom of the circuit as a rotating shaft. The circuit was fixed, and a squeegee was used to scrape the lower surface of the UV film from one end of the circuit to the other end thereof to remove macroscopic bubbles from the contact surface of the circuit with the UV film. The scribing material ring, the UV film and the CMOS image sensor circuit integral structure which are fixed together are taken down from the support and placed on the workbench of the cleaning device, and when the scribing material ring, the UV film and the CMOS image sensor circuit integral structure are placed, the included angle between the surface of the CMOS image sensor circuit and the water-gas mixture spray head above the workbench of the cleaning device is 81 degrees.
The cleaning method is characterized in that a circuit is cleaned by utilizing a water-gas mixture, the mixture is rapidly disintegrated when reaching the surface of the circuit to be cleaned, strong shock waves are formed to take away surplus materials, the rotating speed of a workbench of a cleaning device in the cleaning process is set to 360r/min, the cleaning time is set to 2min, and the pressure intensity of deionized water and compressed air in the water-gas mixture is set to 0.5 MPa. Closing the main shaft of the equipment and spraying water, opening the cabin door of the cleaning chamber, absorbing the integral structure on the workbench of the cleaning device in vacuum, closing the cabin door, and carrying out automatic cleaning.
And after the full-automatic cleaning is finished, the circuit is dried by blowing and spraying. The rotating speed of a workbench of the cleaning device in the drying process is set to 410r/min, the drying time is set to 2.5min, the pressure of deionized water in the water-gas mixture is set to 0MPa, and the pressure of compressed air is set to 0.7 MPa. Starting to automatically blow and spray the drying
After the cleaning and drying are finished, the vacuum of the workbench is closed after all the moving parts such as the workbench, the cleaning spray head and the like stop completely, and the integral structure is taken down from the workbench.
Utilize the UV machine to separate glue, take antistatic bracelet, brand-new dactylotheca well, the circuit ceramic edge is held between the fingers, and the circuit of steadily taking up is prevented finger slip in circuit cavity inside and the circuit drops in being careful in, puts CMOS image sensor circuit back-off in clean tray.
The invention can quickly and effectively remove dirt, dust and other forms of redundancy attached to the surfaces of the chip, the shell and the glass cover plate, solves the problem of low reliability caused by dead spots formed by shielding a photosensitive part due to the redundancy in the CMOS image sensor circuit, and does not influence the bonding strength of a bonding wire in the circuit. The method can effectively remove the redundant materials in the CMOS image sensor circuit, ensures the reliability of the CMOS image sensor circuit after packaging, effectively shortens the production period, and has simple and practical cleaning method, easy realization and strong operability.
The content not described in detail in the present specification is common knowledge to those skilled in the art.
Claims (3)
1. The utility model provides a be used for abluent frock of CMOS image sensor circuit which characterized in that: the scribing material ring comprises a scribing material ring (1), a UV film (2) and a bracket (3); the support (3) is a hollow four-leg supporting structure, the scribing material ring (1) is placed on the support (3), the UV film (2) is attached to the scribing material ring (1), and the upper surface of the UV film (2) is used for fixing a CMOS image sensor circuit;
the UV film (2) is a film with glue on one surface, the base material is polyolefin, and the glue layer material is acrylic acid;
the bonding force of the UV film (2) relative to the CMOS image sensor circuit ceramic shell is 4900-7600 mn/25 mm;
the thickness of the UV film (2) is 150-300 um, and the tensile strength is 22-33 Mpa;
the method for fixing the CMOS image sensor circuit on the tool comprises the following steps:
(1) placing one side of the circuit on the UV film;
(2) the circuit is completely flatly arranged on the UV film in a rotating mode by taking the edge as a rotating shaft;
(3) and (3) scraping the lower surface of the UV film from one end of the circuit to the other end of the circuit by using a scraper to remove bubbles which are visible to naked eyes on the contact surface of the circuit and the UV film.
2. The method for cleaning the CMOS image sensor circuit by using the tool of claim 1, which is characterized by comprising the following steps:
(1) fixing a circuit: fixing the CMOS image sensor circuit on a tool;
(2) circuit transmission: taking down the whole structure of the scribing material ring, the UV film and the CMOS image sensor circuit which are fixed together from the bracket and placing the whole structure on a workbench of a cleaning device, wherein the included angle between the surface of the CMOS image sensor circuit and a water-gas mixture spray head above the workbench of the cleaning device is 80-83 degrees;
(3) circuit cleaning: vacuum adsorbing the integral structure in the step (2) on a workbench of a cleaning device, and cleaning the circuit by using a water-gas mixture;
the water-gas mixture comprises deionized water and compressed air;
the pressure intensity of deionized water and compressed air is 0.5-0.6 Mpa, the water resistance of the deionized water is 15-18 MOmega, the rotating speed of a workbench of the cleaning device is 350-400 r/min, and the cleaning time is 2-2.5 min;
the pressure of deionized water in the water-gas mixture is 0MPa, the pressure of compressed air is 0.6-0.8 MPa, the rotating speed of a workbench of the cleaning device is 400-450 r/min, and the drying time is 2.5-3 min;
(4) and (5) cleaning and drying.
3. The cleaning method according to claim 2, characterized in that: the method for fixing the CMOS image sensor circuit on the tool in the step (1) comprises the following steps:
(7.1) placing one side of the circuit on the UV film;
(7.2) with the edge as a rotating shaft, completely flatly placing the circuit on the UV film in a rotating mode;
and (7.3) scraping the lower surface of the UV film from one end of the circuit to the other end of the circuit by using a scraper to remove bubbles which are visible to naked eyes on the contact surface of the circuit and the UV film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811042993.3A CN109244012B (en) | 2018-09-06 | 2018-09-06 | Tool and method for cleaning CMOS image sensor circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811042993.3A CN109244012B (en) | 2018-09-06 | 2018-09-06 | Tool and method for cleaning CMOS image sensor circuit |
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| CN109244012A CN109244012A (en) | 2019-01-18 |
| CN109244012B true CN109244012B (en) | 2021-11-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111081594B (en) * | 2019-09-25 | 2022-09-30 | 北京时代民芯科技有限公司 | Cleaning tool and method for JLCC image sensor circuit before packaging |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489814A (en) * | 2013-09-24 | 2014-01-01 | 深圳市凯尔迪光电科技有限公司 | Full-automation mega sound wave semiconductor wafer cleaning device |
| CN106629582A (en) * | 2017-01-19 | 2017-05-10 | 烟台睿创微纳技术股份有限公司 | MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2746518Y (en) * | 2004-06-22 | 2005-12-14 | 胜开科技股份有限公司 | Cleaning device for packing image sensor |
| CN101288873A (en) * | 2007-04-16 | 2008-10-22 | 比亚迪股份有限公司 | Air blasting method for removing dust from the sensitive chip and its device |
| CN101834149B (en) * | 2010-04-20 | 2011-12-21 | 天津三星电机有限公司 | Method for controlling pollution during packaging CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor used for cell phone camera |
| EP3489091B1 (en) * | 2014-04-16 | 2021-09-08 | dlhBowles Inc. | Integrated image sensor support and method for simultaneously cleaning a plurality of image sensors |
| CN105642616A (en) * | 2014-11-11 | 2016-06-08 | 宁波舜宇光电信息有限公司 | Dust removal jig and manufacturing method thereof |
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- 2018-09-06 CN CN201811042993.3A patent/CN109244012B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489814A (en) * | 2013-09-24 | 2014-01-01 | 深圳市凯尔迪光电科技有限公司 | Full-automation mega sound wave semiconductor wafer cleaning device |
| CN106629582A (en) * | 2017-01-19 | 2017-05-10 | 烟台睿创微纳技术股份有限公司 | MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer |
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