CN109216479A - A kind of solar battery and its production technology - Google Patents
A kind of solar battery and its production technology Download PDFInfo
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- CN109216479A CN109216479A CN201811045219.8A CN201811045219A CN109216479A CN 109216479 A CN109216479 A CN 109216479A CN 201811045219 A CN201811045219 A CN 201811045219A CN 109216479 A CN109216479 A CN 109216479A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000005516 engineering process Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 29
- 238000000137 annealing Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052709 silver Inorganic materials 0.000 abstract description 17
- 239000004332 silver Substances 0.000 abstract description 17
- 238000011049 filling Methods 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000002585 base Substances 0.000 description 15
- 239000002002 slurry Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to solar battery structure and production and processing fields, and in particular to a kind of solar battery and its production technology, the solar battery are equipped with slot electrode in its front, and solar battery front side grid line is filled in slot electrode；Slot electrode can make silver paste from top to bottom by the slot electrode of the shape for structure wide at the top and narrow at the bottom, assembled from both sides to center, guarantee that silver paste can be sufficient filling with the bottom of slot electrode, to preferably fill up space in slot, solve to fill influence of insufficient caused cavity to series resistance in the prior art.
Description
Technical field
The present invention relates to solar battery structure and production and processing fields, and in particular to a kind of solar battery and its production
Technique.
Background technique
Influence of the drawback brought by traditional thermal power generation to environment has been to be concerned by more and more people, and people are to green energy
The demand in source rapidly develops photovoltaic industry, and with the continuous maturation and perfect, new skill of the manufacturing technology of solar battery
The use of art and new process allows the cost of photovoltaic power generation constantly to reduce, and is more nearly it with conventional electric power generation cost.
The production of modern sun energy battery industry metaplasia develops towards high efficiency, low cost direction, the grid line of conventional solar cell
Including main grid and thin grid, because the mobility of silver paste accomplish the depth-width ratio of thin grid line can not too greatly, and main grid is mainly as remittance
Stream acts on and biggish shading-area can reduce the generation of electric current and increase the use of silver paste.Therefore, MWT solar battery and quarter
Slot buries the representative that gate technique is combined into high efficiency, low cost developing direction.MWT (Metal Wrap Through) refers to that metal is worn
Hole winding technique, the technique for realizing perforation on former silicon wafer specifically by laser or other methods, reaches and draws primary electrode
Purpose on to the same face can increase the transformation efficiency of battery by reducing main grid shading-area.Grooving and grid burying technology passes through
By in a part embedment silicon wafer of grid line, this can increase simultaneously grid line height reducing grid line width.It can not influence in this way
The shading-area of reduction in the case where series resistance, obtains higher short circuit current.While silver can increase in slot electrode and silicon
Contact area to reducing contact resistance and higher electric current collection rate, be a kind of more practical low-cost high-efficiency battery
Technology.
The grooving and grid burying applied at present is to be inserted silver paste in slot electrode in silicon chip surface cutting by laser.This technology
Shading-area can be reduced, contact resistance is reduced, improves the collection of electric current.But still there is series resistance excessive in actual application
And the problems such as low efficiency.These problems are mainly to make to exist in slot empty since silver paste does not adequately fill up slot electrode in printing process
The increase of contact resistance is caused in hole, causes the reduction of efficiency, and there are the risks of electrode delamination.And it is damaged caused by laser grooving
Layer making herbs into wool can not completely remove, and will increase less sub- complex centre in this way, and phosphorus is distributed relative to surface in slot electrode in diffusion
Uniformity can be deteriorated, to cause the increase of contact resistance.
Summary of the invention
To solve problems of the prior art, the purpose of the present invention is to provide a kind of solar batteries.
The front of a kind of solar battery, the solar battery is equipped with slot electrode, the solar battery front side grid line
Lower half portion be filled in the slot electrode；The slot electrode is structure wide at the top and narrow at the bottom.
The solar battery is MWT solar battery, and the MWT solar battery is equipped with slot electrode, institute in its front
It states MWT solar battery front side grid line and is filled in the slot electrode.
Preferably, the shape of the slot electrode is inverted trapezoidal, semicircle or half elliptic.
Preferably, the shape of the slot electrode is inverted trapezoidal, and the length of bottom and bottom ratio is (1.2-1.5) on slot electrode:
1。
Preferably, the bottom length of the slot electrode is set as 10-20 μm, and upper bottom length is set as 15-25 μm, highly sets
It is set to 5-10 μm.
The object of the invention is also to provide a kind of production technologies of solar battery.
A kind of production technology of solar battery, includes the following steps:
When preparing the solar battery, the electrode of front gate line figure is prepared in the front of the solar battery
Slot；When preparing the front gate line of the solar energy, the front gate line is filled in the slot electrode.
Detailed process is as follows for the manufacture of solar cells technique:
Step 1, in silicon substrate surface the slot electrode of front gate line figure is prepared and through the electrode hole of silicon base, it is described
Slot electrode is slot electrode wide at the top and narrow at the bottom；
Step 2, the removal, making herbs into wool and diffusion of surface damage layer are successively carried out to step 1 products obtained therefrom；
Step 3, step 2 products obtained therefrom is successively carried out: in the phosphorosilicate glass that the electrode hole is arranged exposure mask, removes surface
With the exposure mask at edge PN junction and the removal electrode hole；
Step 4, silicon oxide film, composite membrane and antireflective coating are sequentially prepared to step 3 products obtained therefrom surface；
Step 5, front gate line is prepared in the positive slot electrode of step 4 products obtained therefrom；Overleaf prepare rear electrode just
Pole and cathode, and print back electric field；
Step 6, step 5 products obtained therefrom is sintered, obtains the solar battery.
Preferably, in the step 1, the slot electrode of front gate line figure is prepared by laser and through the electricity of silicon base
Pole hole.
Preferably, in the step 2, clear slot is carried out to slot electrode region using the method for chemical attack and removes damage
Layer, detailed process are as follows: reaction temperature be within the scope of 60-80 DEG C using pH value be 10-12 alkaline solution remove damaging layer,
In, the reaction time is within the scope of 120-240s.
Preferably, in the step 3, phosphorosilicate glass and side formed in diffusion process are removed in the acid tank of etching section
Then edge PN junction removes the exposure mask filled in electrode hole in alkali slot.
Preferably, in the step 4, silicon oxide film is prepared by thermal annealing, the temperature of thermal annealing is 500-700 DEG C, when
Between be 20-40min, oxygen flow is 800-1500sccm (sccm indicate standard milliliters/minute).
Preferably, in the step 5, when overleaf preparing the anode of rear electrode, first in the back side of step 4 products obtained therefrom
With laser slotting, back side composite membrane is punched；Anode and the printing of cathode for carrying out rear electrode again, republish back electric field.
Preferably, the shape of the slot electrode is inverted trapezoidal, and the length of bottom and bottom ratio is (1.2-1.5) on slot electrode:
1。
Preferably, the bottom length of the slot electrode is to be set as 10-20 μm, and upper bottom length is set as 15-25 μm, height
It is set as 5-15 μm.
Compared with prior art, the invention has the following beneficial effects:
Solar battery of the invention is equipped with slot electrode in its front, and the lower half portion of the front gate line of solar battery is filled out
It filling in slot electrode, slot electrode is slot electrode wide at the top and narrow at the bottom, silver paste can be made from top to bottom by the slot electrode of the shape, by
Both sides are assembled to center, guarantee that silver paste can be sufficient filling with the bottom of slot electrode, to preferably fill up space in slot, are solved existing
There is the influence that insufficient caused cavity is filled in technology to series resistance, and can be in the case where not influencing series resistance
The shading-area for reducing front gate line, obtains higher short circuit current；Simultaneously silver paste in slot electrode with the contact area phase of silicon
It is also bigger than with the prior art, to reduce contact resistance and higher electric current collection rate.
The production technology of solar battery of the invention, can by preparing slot electrode wide at the top and narrow at the bottom in silicon substrate surface
In the subsequent process to print electrode, silver paste is made preferably to fill up space in slot, insufficient cause is filled in solution in the prior art
Influence of the cavity to series resistance；It, can will be by increasing section surface removal damage layer process in the making herbs into wool incipient stage
Silicon substrate surface prepares the damaging layer generated when slot electrode and electrode hole and is removed, to reduce the complex centre of few son；Pass through
Thermal annealing is carried out, the uniformity that phosphorus is distributed in slot electrode can be improved, contact effect and reduction of the ag paste electrode with silicon is improved and connects
Electric shock resistance；So that electrode slurry and silicon base is formed alloy by sintering, obtains good Ohmic contact.And it gives birth to through the invention
The solar battery of production. art preparation can make silver paste preferably fill up space in slot, and insufficient draw is filled in solution in the prior art
Influence of the cavity risen to series resistance.
Detailed description of the invention
Fig. 1 is vertical cross section of the solar battery of the present invention at slot electrode.
Fig. 2 is the structural schematic diagram of one embodiment of solar battery of the present invention.
Fig. 3 is the preparation technology figure of one embodiment of solar battery of the present invention.
In figure, 1 is PN junction, and 2 be front gate line, and 3 be silicon base, and 4 be slot electrode, and 6 be back electric field, and 7 be rear electrode
Cathode, 8 be the anode of rear electrode, and 9 be aluminium oxide/silicon nitride composite membrane, and 10 be electrode hole.
Specific embodiment
It is next with reference to the accompanying drawings and examples that the present invention is further illustrated.
Referring to Figures 1 and 2, the front of solar battery of the invention is equipped with slot electrode, solar battery front side grid line
Lower half portion is filled in the slot electrode；The slot electrode is structure wide at the top and narrow at the bottom.Solar-electricity of the invention is prepared again
Chi Shi prepares the slot electrode of front gate line figure in the front of solar battery；It, will in the front gate line for preparing solar energy
Front gate line is filled in the slot electrode.Slot electrode is designed as shape wide at the top and narrow at the bottom by the present invention, this shape can make silver paste by
On down, from both sides to center assemble, can guarantee that silver paste can be sufficient filling with electrode trench bottom and finally fill up slot electrode, and
This shape can increase the contact area of electrode, allow the better collected current of electrode；It is able to solve and exists in the prior art
Due to silver paste filling it is insufficient caused by cavity to series resistance generation influence.
As shown in Fig. 2, as the preferred embodiment of the invention, the solar battery be by MWT solar battery with
Grooving and grid burying technology combines the solar battery being prepared, i.e., under MWT solar battery is equipped with above-mentioned upper width in its front
Narrow slot electrode, MWT solar battery front side grid line are filled in slot electrode.
As the preferred embodiment of the invention, the shape of slot electrode is inverted trapezoidal, the length at bottom and bottom on slot electrode
Than for (1.2-1.5): 1.
As the preferred embodiment of the invention, when the shape of slot electrode is inverted trapezoidal, the bottom length of slot electrode is set
It is set to 10-20 μm, upper bottom length is set as 15-25 μm, and height (i.e. the depth of slot electrode) is 5-15 μm.
As the preferred embodiment of the invention, the shape of slot electrode is isosceles trapezoid, semicircle or half elliptic.
The production technology of solar battery shown in Fig. 2, includes the following steps:
Step 1, the slot electrode of front gate line figure is prepared in silicon chip surface and through the electrode hole of silicon wafer, slot electrode is
Slot electrode wide at the top and narrow at the bottom；
Step 2, the damaging layer on step 1 resulting product surface is removed, then making herbs into wool forms flannelette；
Step 3, being diffused and fill up exposure mask slurry in electrode hole in step 2 resulting product；
Step 4, phosphorosilicate glass and edge PN junction of removal step 3 products obtained therefrom formed in diffusion process, Yi Ji electricity
The exposure mask slurry filled in the hole of pole；
Step 5, thermal annealing then to step 4 resulting product is carried out, makes silicon chip surface deposited oxide silicon fiml；
Step 6, pellumina and silicon nitride film successively then in the step 5 resulting product back side are deposited；
Step 7, then in step 6 resulting product front deposition silicon nitride film；
Step 8, it then in the back side of step 7 resulting product slots, backside oxide aluminium film and silicon nitride film is punched；
Step 9, then in step 8 resulting product front front gate line, the anode of cell backside printed back electrode are printed
And cathode, and print back electric field；
Step 10, it then to step 9 resulting product is sintered, obtains solar battery.
As preferred embodiment of the invention, in step 1, the slot electrode of front gate line figure is prepared by laser
With the electrode hole for running through silicon base.
As preferred embodiment of the invention, in step 2, slot electrode region is carried out using the method for chemical attack
Clear slot simultaneously removes damaging layer processing, detailed process are as follows: the alkali for the use of pH value being 10-12 within the scope of 60-80 DEG C in reaction temperature
Property solution remove damage from laser layer, wherein the reaction time is within the scope of 120-240s.
As preferred embodiment of the invention, in the step 6, when thermal annealing, temperature is 500-700 DEG C, the time
For 20-40min, oxygen flow is 800-1500sccm (sccm indicates standard milliliters/minute).
As preferred embodiment of the invention, in step 6, when thermal annealing, temperature is 500-700 DEG C, time 20-
40min, oxygen flow 800-1500sccm.
As preferred embodiment of the invention, in step 6, thermal annealing is carried out to silicon base by tubular diffusion furnace,
To improve the uniformity that phosphorus is distributed in slot electrode, contact effect and reduction contact resistance of the electrode silver plasm with silicon are improved.
As preferred embodiment of the invention, in the step 9, in the back side laser of step 8 resulting product
Fluting.
In preparation process of the invention, the electrode hole of silicon base and the slot electrode of grid line figure are run through by laser preparation,
To solve damaging layer caused by laser slotting, increase the clear slot technique of one section of chemical attack in the making herbs into wool incipient stage, in reaction temperature
It is to remove damage from laser layer using the NaOH solution that pH value is 10-12 at 60-80 DEG C, the reaction time is within the scope of 120-240s.
Silicon base is put into diffusion furnace and prepares PN junction, exposure mask slurry will be filled up by exposure mask equipment in electrode hole, is first existed in etching section
Removal edge PN junction and phosphorosilicate glass in acid tank, and exposure mask slurry is removed while alkali slot section polished backside.By to silicon substrate
Bottom carries out thermal annealing, can improve the uniformity that phosphorus is distributed in slot electrode, improves contact effect and reduction contact electricity of the silver with silicon
Resistance.The temperature of thermal annealing is 500-700 DEG C, time 20-40min, oxygen flow 800-1500sccm.Then it is plated in front
Upper silicon nitride film, the back side successively plate aluminium oxide and silicon nitride film.Silicon substrate bottom back side is slotted by laser, by the oxidation at the back side
Aluminium and silicon nitride film film are punched, the contact so as to slurry with silicon base.By being screen printed onto silicon base front and back difference
The anode and cathode of front gate line, rear electrode are printed, electric field is carried on the back, so that slurry and silicon base is formed alloy by sintering, obtains
Good Ohmic contact.
Embodiment 1
The manufacture of solar cells technique of the present embodiment, specifically includes the following steps:
Step 1, in silicon substrate surface the slot electrode of front gate line figure marked by laser and through the electrode of silicon base
Hole, the bottom length of slot electrode are 10 μm, and upper bottom length is 15 μm, and depth is 5 μm；
Step 2, step 1 resulting product surface is removed using the NaOH solution that pH value is 10 at being 60 DEG C in reaction temperature
Damage from laser layer, wherein the reaction time, then making herbs into wool formed flannelette in 120s；
Step 3, being diffused and fill up exposure mask slurry in electrode hole in step 2 resulting product；
Step 4, phosphorosilicate glass and edge PN junction of removal step 3 products obtained therefrom formed in diffusion process, Yi Ji electricity
The exposure mask slurry filled in the hole of pole；
Step 5, then to step 4 resulting product at 500 DEG C thermal annealing 20min, oxygen flow is in thermal annealing process
800sccm, in silicon substrate surface silicon oxide deposition film；
Step 6, pellumina and silicon nitride film successively then in the step 5 resulting product back side are deposited；
Step 7, then in step 6 resulting product front deposition silicon nitride film；
Step 8, it then in the back side of step 7 resulting product slots, backside oxide aluminium film and silicon nitride film is punched；
Step 9, then in step 8 resulting product front front gate line, the anode of cell backside printed back electrode are printed
And cathode, and print back electric field；
Step 10, it then to step 9 resulting product is sintered, obtains solar battery.
Embodiment 2
The manufacture of solar cells technique of the present embodiment, specifically includes the following steps:
Step 1, in silicon substrate surface the slot electrode of front gate line figure marked by laser and through the electrode of silicon base
Hole, the bottom length of slot electrode are 14 μm, and upper bottom length is 20 μm, and depth is 7 μm, and then making herbs into wool forms flannelette；
Step 2, step 1 resulting product surface is removed using the NaOH solution that pH value is 11 at being 70 DEG C in reaction temperature
Damage from laser layer, wherein the reaction time is in 180s；
Step 3, being diffused and fill up exposure mask slurry in electrode hole in step 2 resulting product；
Step 4, phosphorosilicate glass and edge PN junction of removal step 3 products obtained therefrom formed in diffusion process, Yi Ji electricity
The exposure mask slurry filled in the hole of pole；
Step 5, then to step 4 resulting product at 600 DEG C thermal annealing 30min, oxygen flow is in thermal annealing process
1000sccm, in silicon substrate surface silicon oxide deposition film；
Step 6, pellumina and silicon nitride film successively then in the step 5 resulting product back side are deposited；
Step 7, then in step 6 resulting product front deposition silicon nitride film；
Step 8, it then in the back side of step 7 resulting product slots, backside oxide aluminium film and silicon nitride film is punched；
Step 9, then in step 8 resulting product front front gate line, the anode of cell backside printed back electrode are printed
And cathode, and print back electric field；
Step 10, it then to step 9 resulting product is sintered, obtains solar battery.
Embodiment 3
The manufacture of solar cells technique of the present embodiment, specifically includes the following steps:
Step 1, in silicon substrate surface the slot electrode of front gate line figure marked by laser and through the electrode of silicon base
Hole, the bottom length of slot electrode are 15 μm, and upper bottom length is 18 μm, and depth is 8 μm, and then making herbs into wool forms flannelette；
Step 2, step 1 resulting product surface is removed using the NaOH solution that pH value is 11 at being 75 DEG C in reaction temperature
Damage from laser layer, wherein the reaction time is in 200s；
Step 3, being diffused and fill up exposure mask slurry in electrode hole in step 2 resulting product；
Step 4, phosphorosilicate glass and edge PN junction of removal step 3 products obtained therefrom formed in diffusion process, Yi Ji electricity
The exposure mask slurry filled in the hole of pole；
Step 5, then to step 4 resulting product at 650 DEG C thermal annealing 35min, oxygen flow is in thermal annealing process
1200sccm, in silicon substrate surface silicon oxide deposition film；
Step 6, pellumina and silicon nitride film successively then in the step 5 resulting product back side are deposited；
Step 7, then in step 6 resulting product front deposition silicon nitride film；
Step 8, it then in the back side of step 7 resulting product slots, backside oxide aluminium film and silicon nitride film is punched；
Step 9, then in step 8 resulting product front front gate line, the anode of cell backside printed back electrode are printed
And cathode, and print back electric field；
Step 10, it then to step 9 resulting product is sintered, obtains solar battery.
Embodiment 4
The manufacture of solar cells technique of the present embodiment, specifically includes the following steps:
Step 1, in silicon substrate surface the slot electrode of front gate line figure marked by laser and through the electrode of silicon base
Hole, the bottom length of slot electrode are 20 μm, and upper bottom length is 25 μm, and depth is 10 μm, and then making herbs into wool forms flannelette；
Step 2, step 1 resulting product surface is removed using the NaOH solution that pH value is 12 at being 80 DEG C in reaction temperature
Damage from laser layer, wherein the reaction time is in 240s；
Step 3, being diffused and fill up exposure mask slurry in electrode hole in step 2 resulting product；
Step 4, phosphorosilicate glass and edge PN junction of removal step 3 products obtained therefrom formed in diffusion process, Yi Ji electricity
The exposure mask slurry filled in the hole of pole；
Step 5, then to step 4 resulting product at 700 DEG C thermal annealing 40min, oxygen flow is in thermal annealing process
1500sccm, in silicon substrate surface silicon oxide deposition film；
Step 6, pellumina and silicon nitride film successively then in the step 5 resulting product back side are deposited；
Step 7, then in step 6 resulting product front deposition silicon nitride film；
Step 8, it then in the back side of step 7 resulting product slots, backside oxide aluminium film and silicon nitride film is punched；
Step 9, then in step 8 resulting product front front gate line, the anode of cell backside printed back electrode are printed
And cathode, and print back electric field；
Step 10, it then to step 9 resulting product is sintered, obtains solar battery.
Each parametric data of embodiment is as shown in table 1:
Table 1
。
Claims (10)
1. a kind of solar battery, which is characterized in that the front of the solar battery is equipped with slot electrode, the solar battery
The lower half portion of front gate line is filled in the slot electrode；The slot electrode is structure wide at the top and narrow at the bottom.
2. solar battery according to claim 1, which is characterized in that the shape of the slot electrode is inverted trapezoidal, semicircle
Shape or half elliptic.
3. solar battery according to claim 2, which is characterized in that the shape of the slot electrode is inverted trapezoidal, described
The upper bottom of slot electrode and the length ratio of bottom are (1.2-1.5): 1.
4. solar battery according to claim 1, which is characterized in that the bottom length of the slot electrode is set as 10-
20 μm, upper bottom length is set as 15-25 μm, is highly set as 5-10 μm.
5. a kind of production technology of solar battery, which comprises the steps of:
When preparing the solar battery, the slot electrode of front gate line figure is prepared in the front of the solar battery；
When preparing the front gate line of the solar energy, the front gate line is filled in the slot electrode.
6. production technology according to claim 5, which is characterized in that the detailed process of the manufacture of solar cells technique
It is as follows:
Step 1, in silicon substrate surface the slot electrode of front gate line figure is prepared and through the electrode hole of silicon wafer, the slot electrode
For slot electrode wide at the top and narrow at the bottom；
Step 2, the removal, making herbs into wool and diffusion of surface damage layer are successively carried out to step 1 products obtained therefrom；
Step 3, step 2 products obtained therefrom is successively carried out: exposure mask, the phosphorosilicate glass for removing surface and side is set in the electrode hole
Exposure mask at edge PN junction and the removal electrode hole；
Step 4, silicon oxide film, composite membrane and antireflective coating are sequentially prepared to step 3 products obtained therefrom surface；
Step 5, front gate line is prepared in the positive slot electrode of step 4 products obtained therefrom；Overleaf prepare rear electrode anode and
Cathode, and print back electric field.
7. production technology according to claim 6, which is characterized in that in the step 2, using the method pair of chemical attack
Damaging layer is removed, detailed process are as follows: in reaction temperature is the alkaline solution for the use of pH value being 10-12 within the scope of 60-80 DEG C
Remove damaging layer, wherein the reaction time is within the scope of 120-240s.
8. production technology according to claim 6, which is characterized in that in the step 4, prepare silica by thermal annealing
Film, the temperature of thermal annealing are 500-700 DEG C, time 20-40min, oxygen flow 800-1500sccm.
9. according to production technology described in claim 5-8 any one, which is characterized in that the shape of the slot electrode is terraced
Shape, the length of bottom and bottom ratio is (1.2-1.5) on slot electrode: 1.
10. production technology according to claim 9, which is characterized in that the bottom length of the slot electrode is set as 10-20
μm, upper bottom length is set as 15-25 μm, is highly set as 5-10 μm.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2846097A1 (en) * | 1978-10-23 | 1980-04-24 | Rudolf Dipl Phys Dr Hezel | Solar cell with increased efficiency - has buried metal finger electrode system to reduce charge carrier diffusion path length |
| US4748130A (en) * | 1984-03-26 | 1988-05-31 | Unisearch Limited | Method of making buried contact solar cell |
| CN1489793A (en) * | 2001-01-31 | 2004-04-14 | 信越半导体株式会社 | Solar cell and method for producing same |
| CN1543681A (en) * | 2001-06-19 | 2004-11-03 | 英国石油太阳能有限公司 | Process for manufacturing a solar cell |
| US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
| US20070068570A1 (en) * | 2005-09-27 | 2007-03-29 | Kim Tae S | Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN102751370A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Double-sided heterojunction solar cell and preparation method |
| CN203367298U (en) * | 2013-06-26 | 2013-12-25 | 江苏爱多光伏科技有限公司 | Buried gate electrode on solar cell slice |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
| CN108198906A (en) * | 2017-12-29 | 2018-06-22 | 南京日托光伏科技股份有限公司 | A kind of preparation method of efficient MWT solar cells |
-
2018
- 2018-09-07 CN CN201811045219.8A patent/CN109216479A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2846097A1 (en) * | 1978-10-23 | 1980-04-24 | Rudolf Dipl Phys Dr Hezel | Solar cell with increased efficiency - has buried metal finger electrode system to reduce charge carrier diffusion path length |
| US4748130A (en) * | 1984-03-26 | 1988-05-31 | Unisearch Limited | Method of making buried contact solar cell |
| CN1489793A (en) * | 2001-01-31 | 2004-04-14 | 信越半导体株式会社 | Solar cell and method for producing same |
| CN1543681A (en) * | 2001-06-19 | 2004-11-03 | 英国石油太阳能有限公司 | Process for manufacturing a solar cell |
| US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
| US20070068570A1 (en) * | 2005-09-27 | 2007-03-29 | Kim Tae S | Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN102751370A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Double-sided heterojunction solar cell and preparation method |
| CN203367298U (en) * | 2013-06-26 | 2013-12-25 | 江苏爱多光伏科技有限公司 | Buried gate electrode on solar cell slice |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
| CN108198906A (en) * | 2017-12-29 | 2018-06-22 | 南京日托光伏科技股份有限公司 | A kind of preparation method of efficient MWT solar cells |
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