CN109216189B

CN109216189B - Heating device

Info

Publication number: CN109216189B
Application number: CN201710519305.7A
Authority: CN
Inventors: 梁耀祥; 卢祈鸣; 黄之骏; 黄志昌; 曹荣志
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2017-06-30
Filing date: 2017-06-30
Publication date: 2021-02-26
Anticipated expiration: 2037-06-30
Also published as: CN109216189A

Abstract

The present disclosure relates to a heating device. The heating device comprises a bearing platform and a composite heating ring. The bearing platform is used for bearing the wafer, and the composite heating ring is arranged between the bearing platform and the wafer. Wherein the composite heating ring extends along the edge of the wafer. The composite heating ring includes a first heating ring and a second heating ring. The bottom surface of the first heating ring is directly contacted with the bearing surface of the bearing platform, and the first heating ring has a step-shaped structure. The second heating ring is arranged in the opening of the ladder-shaped structure, and the top surface of the second heating ring is directly contacted with the bottom surface of the wafer.

Description

Heating device

Technical Field

The present disclosure relates to a heating device, and more particularly, to a multi-channel gas heater.

Background

The development of semiconductor materials drives the growth of semiconductor transistors in large scale. In order to increase the device density and performance of semiconductor transistors and reduce the cost thereof, the stack, surface properties and structural design of the various layers of thin films in semiconductor transistors are actively studied and developed. In order to improve the film properties, the film can be deposited by Chemical Vapor Deposition (CVD). Wherein, in order to obtain better step coverage property, the film can be formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). Therefore, by applying voltage, the reaction gas forms plasma, and a deposited film with good film property can be formed on the surface of the wafer, thereby improving the performance of the semiconductor device.

Disclosure of Invention

According to an aspect of the present disclosure, a heating device is provided. The heating device comprises a bearing platform and a composite heating ring. The bearing platform is provided with a bearing surface and is used for bearing the wafer. The composite heating ring is arranged between the bearing platform and the wafer and extends along the edge of the wafer. The composite heating ring includes a first heating ring and a second heating ring. The bottom surface of the first heating ring is directly contacted with the bearing surface, and the first heating ring has a step-shaped structure. Wherein, the opening of the ladder-shaped structure faces to the edge of the wafer. The first heating ring has a first melting point. The second heating ring is arranged in the opening of the ladder-shaped structure, and the top surface of the second heating ring is directly contacted with the bottom surface of the wafer. The second heating ring has a second melting point, and the second melting point is greater than the first melting point.

According to another aspect of the present disclosure, a heating device is provided. The heating device comprises a bearing platform, a plurality of supporting pieces and a composite heating ring. The bearing platform is provided with a bearing surface and a heating gas channel. The carrying platform is used for carrying the wafer. The heating gas channel comprises an input channel and at least one gas groove. The input channel is arranged in the bearing platform, and at least one gas groove is arranged on the bearing surface. Wherein each gas groove is communicated with the input channel. The supporting member is disposed on the carrying surface. The composite heating ring is arranged on the bearing surface and extends along the edge of the wafer. The composite heating ring comprises a first heating ring and a second heating ring. The bottom surface of the first heating ring is directly contacted with the bearing surface, and the first heating ring has a step-shaped structure. The opening of the stepped structure faces the edge of the wafer. The first heating ring has a first melting point. The second heating ring is disposed in the opening of the step-shaped structure, and a top surface of the second heating ring directly contacts a bottom surface of the wafer. The second heating ring has a second melting point, and the second melting point is greater than the first melting point.

Drawings

Aspects of the present disclosure may be better understood from the following detailed description when considered in conjunction with the accompanying drawings. It is noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1A, 2A, 3A, and 4A are schematic vertical cross-sectional views illustrating a heating device according to some embodiments of the present disclosure;

fig. 1B, 2B, 3B, and 4B are schematic vertical cross-sectional views illustrating heating of a wafer by a heating device according to some embodiments of the present disclosure.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed intermediate the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. Such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Also, spatially relative terms, such as "downward", "below", "lower", "above", "upper", and the like, may be used herein to facilitate description of an element or feature in relation to another element or feature(s) as illustrated in the figures. These spatially relative terms are intended to encompass different orientations of the element in use or operation in addition to the orientation depicted in the figures. The devices may be oriented in different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted in a similar manner. Furthermore, the term "made" may refer to terms such as "comprising" or "consisting of.

In the chemical vapor deposition process of the wafer, the wafer is heated by a heating device in the cavity, and reaction gas is introduced into the cavity. Then, a voltage is applied to the reactive gas to form a reactive gas plasma, which can deposit a film on the wafer surface. Wherein the heating device heats the bottom surface of the wafer through the heating ring to make the wafer reach a reaction temperature, so that the reaction gas is deposited onto the surface of the wafer by plasma. However, the heating ring of the heating device is generally made of metal material, and when the chemical vapor deposition process is performed, due to the high temperature environment, metal atoms in the heating ring are easy to infiltrate into the bottom surface of the wafer directly contacting with the heating ring, thereby generating surface defects. Therefore, in the subsequent treatment processes [ for example: during Chemical Mechanical Polishing (CMP), the applied stress is likely to cause damage to the wafer along the surface defects. If the heating ring of the heating device is made of stainless steel material and the bottom surface of the wafer directly contacts the top surface of the heating ring, the plasma is applied and the high temperature of the heating device affects, so that iron atoms and chromium atoms in the stainless steel material easily infiltrate into the bottom surface of the wafer to form stainless steel defects (stainless defects), thereby damaging the wafer in the subsequent treatment. Generally, the formation temperature of stainless steel defects is substantially 400 ℃ to 1000 ℃.

The present disclosure discloses a heating device with a composite heating ring. By the heating device disclosed by the invention, the composite heating ring can prevent metal atoms from infiltrating into the bottom surface of the wafer, so that the surface defects generated by the contact of the bottom surface of the wafer and the heating ring can be eliminated. Accordingly, the heating device of the present disclosure can solve the above surface defects and also take into account the heating effect of the heating device on the wafer.

Referring to fig. 1A and 1B, fig. 1A is a schematic vertical cross-sectional view illustrating a heating apparatus according to some embodiments of the present disclosure, and fig. 1B is a schematic vertical cross-sectional view illustrating a wafer heated by the heating apparatus according to some embodiments of the present disclosure. The heating device 100 includes a carrier platform 110 and a composite heating ring 120. The platen 110 has a carrying surface 110a, and the platen 110 is used for carrying the wafer 130. In some embodiments, the load-bearing platform 110 may be made of a metallic material. In some embodiments, the load-bearing platform 110 may be fabricated from stainless steel materials. In some embodiments, wafer 130 may comprise a silicon substrate or other suitable substrate having a layer of material formed thereon. Other suitable substrate materials may include other suitable elemental semiconductors, such as: diamond or germanium; suitable compound semiconductors are, for example: silicon carbide, indium arsenide, or indium phosphide; or a suitable alloy semiconductor such as: silicon germanium carbide, gallium arsenide phosphide or gallium indium phosphide. In other embodiments, wafer 130 may further include various doped regions, dielectric features, and/or multi-level interconnects.

The composite heating ring 120 is disposed between the platen 110 and the wafer 130. In some embodiments, the composite heating ring 120 extends along the edge 131 of the wafer 130. In other embodiments, the composite heating ring 120 extends equidistantly along the edge 131 of the wafer 130. In some embodiments, the composite heating ring 120 extends along an edge of the load-bearing platform 110. For example, the radius of the platen 110 may be 147 mm, and the radius of the wafer 130 may be 150 mm. The outer side surface of the composite heating ring 120 (i.e., the outer side surface 123c of the second heating ring 123) is 3 mm away from the edge 131 of the wafer 130.

The composite heating ring 120 includes a first heating ring 121 and a second heating ring 123. The bottom surface 121b of the first heating ring 121 directly contacts the carrying surface 110 a. The first heating ring 121 has a stepped structure, and the opening of the stepped structure faces the edge 131 of the wafer 130. In some embodiments, the first heating ring 121 has an L-shaped vertical cross-section. The first heating ring 121 is made of a metal material. In some embodiments, the first heating ring 121 is made of a stainless steel material. In other embodiments, the material of the first heating ring 121 is the same as the material of the supporting platform 110. In some embodiments, the first melting point of the first heating ring 121 is substantially from 1400 ℃ to 1600 ℃. The second heating ring 123 is disposed in the opening of the stepped structure of the first heating ring 121. The second heating ring 123 is made of a ceramic material. In one embodiment, the second melting point of the second heating ring 123 is greater than the first melting point of the first heating ring 121. In some embodiments, the second melting point of the second heating ring 123 is substantially greater than 2000 ℃. In other embodiments, the second melting point of the second heating ring 123 is substantially from 1400 ℃ to 3000 ℃. The first heating ring 121 is tightly combined with the second heating ring 123. In some embodiments, the first heating ring 121 and the second heating ring 123 may be coupled by embedding, locking, interference fit, clamping, adhesion, other suitable fixing methods, or any combination thereof. In some embodiments, the composite heating ring 120 may be secured to the bearing surface 110a by means of a snap fit, a lock, a tight fit, a snap fit, an adhesive, other suitable securing means, or any combination thereof.

In other embodiments, the first heating ring 121 is integrally formed with the load-bearing platform 110. In this embodiment, the first heating ring 121 and the supporting platform 110 may be formed by casting and/or other suitable mechanical manufacturing methods. Then, the second heating ring 123 is closely combined with the first heating ring 121 by the aforementioned appropriate method.

In some embodiments, the composite heating ring 120 may be directly or indirectly connected to a heater (not shown) to transfer heat energy generated by the heater and heat the wafer 130. In one embodiment, the heating apparatus 100 may heat the wafer 130 by introducing a heating gas. When the wafer 130 is heated by the heating apparatus 100, the wafer 130 is formed in a curved shape with a slightly raised center and a lowered periphery due to stress (e.g., bombardment by plasma of the reaction gas, thermal stress, and/or force of the introduced heating gas), so that the top surface 123a of the second heating ring 123 may directly contact the bottom surface 133 of the wafer, but the top surface 121a of the first heating ring 121 does not contact the bottom surface 133 of the wafer. Although the top surface 121a of the first heating ring 121 does not contact the bottom surface 133 of the wafer and thus the wafer 130 cannot be directly heated, the first heating ring 121 may indirectly heat the wafer 130 by the radiant heat generated by the first heating ring 121.

In some embodiments, the ratio of the width of the top surface 123a of the second heating ring 123 to the width of the top surface of the composite heating ring 120 is substantially greater than 0 and less than or equal to 0.6. If the ratio is greater than 0.6, the width of the top surface 121a of the first heating ring 121 is too small, thereby reducing the efficiency of the first heating ring 121 for indirectly heating the wafer 130. In other embodiments, the ratio of the width of the top surface 123a of the second heating ring 123 to the width of the top surface of the composite heating ring 120 is substantially greater than 0.25 and less than or equal to 0.6. For example, when the radius of the carrier platform 110 is 147 mm, the width of the composite heating ring 120 may be 6 mm, and the width of the second heating ring may be substantially greater than 0 mm and less than or equal to 4 mm. In some embodiments, when the top surface 121a of the first heating ring 121 is coplanar with the top surface 123a of the second heating ring 123, the ratio of the height of the second heating ring 123 to the height of the composite heating ring 120 is substantially greater than 0 and less than 1. In some embodiments, when the top surface 121a of the first heating ring 121 and the top surface 123a of the second heating ring 123 are coplanar, the ratio of the height of the second heating ring 123 to the height of the composite heating ring 120 is substantially greater than 0 and less than or equal to 0.3.

When the heating apparatus 100 heats the wafer 130, since the first heating ring 121 made of the metal material does not directly contact the bottom surface 133 of the wafer, metal atoms of the metal material do not penetrate into the bottom surface 133 of the wafer, so as to prevent the bottom surface 133 of the wafer from generating surface defects, thereby preventing the wafer 133 from being damaged along the surface defects.

In some embodiments, when the second heating ring 123 is made of a ceramic material, the ceramic material has a higher melting point than the metal material, so that the ceramic material does not melt and infiltrate into the wafer bottom surface 133, and the wafer 130 after the heat treatment does not have the aforementioned defects.

In some embodiments, the top surface 121a of the first heating ring 121 is coplanar with the top surface 123a of the second heating ring 123, and the outer side surface 121c of the first heating ring 121 is cut flush with the outer side surface 123c of the second heating ring 123. In this embodiment, the composite heating ring 120 may have a rectangular vertical cross-section. In some embodiments, the top surface 123a of the second heating ring 123 may be higher than the top surface 121a of the first heating ring 121.

In some embodiments, the heating device 100 further comprises a plurality of lift pins (not shown). The lift pins are disposed in the load-bearing platform 110. The lift pins can be vertically raised from the area of the carrying surface 110a surrounded by the composite heating ring 120 to receive the wafer to be heated from the robot arm, and vertically lowered to place the wafer to be heated on the composite heating ring 120; alternatively, the lift pins may be vertically raised within the range of the carrying surface 110a surrounded by the composite heating ring 120 to lift the heated wafer, thereby facilitating the robot to hold the wafer.

Referring to fig. 2A and 2B, fig. 2A is a schematic vertical cross-sectional view illustrating a heating apparatus according to some embodiments of the present disclosure, and fig. 2B is a schematic vertical cross-sectional view illustrating a wafer heated by the heating apparatus according to some embodiments of the present disclosure. The heating device 200 includes a carrier platform 210, a composite heating ring 220, and a plurality of supports 240. The stage 210 is used for carrying a wafer 230 to be heated.

The composite heating ring 220 is disposed between the platen 210 and the wafer 230. In one embodiment, the composite heating ring 220 extends along the edge 231 of the wafer 230. In some embodiments, the composite heating ring 220 extends equidistantly along the edge 231 of the wafer 230. In other embodiments, the composite heating ring 220 extends along the edge of the load-bearing platform 210. The composite heating ring 220 includes a first heating ring 221 and a second heating ring 223. The bottom surface 221b of the first heating ring 221 directly contacts the carrying surface 210a of the carrying platform 210. The first heating ring 221 has a step structure, and the opening of the step structure is toward the edge 231 of the wafer 230. In some embodiments, the first heating ring 221 has an L-shaped vertical cross-section. The second heating ring 223 is disposed in the opening of the stepped structure. In some embodiments. The first heating ring 221 and the second heating ring 223 are tightly combined. In some embodiments, the first heating ring 221 and the second heating ring 223 may be coupled by means of a snap fit, a lock, a tight fit, a snap fit, an adhesive, other suitable fastening methods, or any combination thereof. The first heating ring 221 is made of a metal material. In some embodiments, the first heating ring 221 is made of a stainless steel material. The second heating ring 223 is made of a ceramic material. In some embodiments, the second melting point of the second heating ring 223 is greater than the first melting point of the first heating ring 221. In some embodiments, the first melting point of the first heating ring 221 is substantially from 1400 ℃ to 1600 ℃. In some embodiments, the second melting point of the second heating ring 223 is substantially greater than 2000 ℃. In some embodiments, the second melting point of the second heating ring 223 is substantially from 1400 ℃ to 3000 ℃.

In some embodiments, the ratio of the width of the top surface 223a of the second heating ring 223 to the top surface of the composite heating ring 220 is substantially greater than 0 and less than or equal to 0.6. In other embodiments, the ratio of the width of the top surface 223a of the second heating ring 223 to the top surface of the composite heating ring 220 is substantially greater than or equal to 0.25 and less than or equal to 0.6. In some embodiments, the ratio of the height of the second heating ring 223 to the height of the composite heating ring 220 is substantially greater than 0 and less than 1.

The supporting member 240 is disposed on the carrying surface 210a of the carrying platform 210, and the supporting member 240 is surrounded by the composite heating ring 220. In some embodiments, the supporting members 240 are uniformly disposed on the supporting surface 210 a. In some embodiments, the top surface 240a of the support 240 and the top surface 221a of the first heating ring 221 are not higher than the top surface 223a of the second heating ring 223. In some embodiments, the top surface 221a of the first heating ring 221, the top surface 223a of the second heating ring 223, and the top surface 240a of the support 240 are coplanar. In some embodiments, the support 240 is made of a metal material. In other embodiments, the material of the supporting member 240 is the same as or different from the material of the first heating ring 221. In some embodiments, the support member 240 and/or the composite heating ring 220 may be secured to the bearing surface 210a by means of a snap fit, a lock, a tight fit, a snap fit, an adhesive, other suitable securing methods, or any combination thereof.

The composite heating ring 220 of the heating apparatus 200 may be directly or indirectly connected to a heater (not shown) to transfer heat energy generated by the heater and heat the wafer 230. In some embodiments, the heating device 200 may heat the wafer 230 by introducing a heating gas. When the wafer 230 is heated by the heating apparatus 200, the wafer 230 is subjected to stress (e.g., bombardment by reactive gas plasma, thermal stress, and/or force of the introduced heating gas), so that the wafer 230 is formed into a curved shape with a central portion raised and a peripheral portion lowered. Thus, the wafer bottom surface 233 may directly contact the top surface 223a of the second heating ring 223, but the wafer bottom surface 233 does not contact the top surface 221a of the first heating ring 221. In this embodiment, although the top surface 221a of the first heating ring 221 cannot directly contact the bottom surface 233 of the wafer, the first heating ring 221 may indirectly heat the wafer 230 by the radiant heat generated by the first heating ring 221.

Accordingly, the ratio of the width of the top surface 123a of the second heating ring 123 to the width of the composite heating ring 220 is substantially greater than 0 and less than or equal to 0.6. If the above ratio is greater than 0.6, the width of the top surface 221a of the first heating ring 221 is too small, thereby reducing the efficiency of the first heating ring 221 in indirectly heating the wafer 230.

In one embodiment, the support 240 may be directly or indirectly connected to the heater to transfer heat energy generated by the heater and more uniformly heat the wafer 230. Since the center of the wafer 230 is raised, the wafer bottom surface 233 does not directly contact the top surface 240a of the support 240. Similarly, although the support member 240 does not directly contact the bottom surface 233 of the wafer, the bottom surface 233 of the wafer may be heated more uniformly by the radiant heat generated by the top surface 240a of the support member 240, and the support member 240 disposed within the composite heating ring 220 (i.e., the support member 240 surrounded by the composite heating ring 220).

In other embodiments, the top surface 223a of the second heating ring 223 is higher than the top surfaces 221a of the first heating ring 221 and the top surface 240a of the support 240, so as to prevent the wafer bottom surface 233 from contacting the top surfaces 221a of the first heating ring 221 and the top surface 240a of the support 240, thereby preventing metal atoms from infiltrating into the wafer bottom surface 233.

Referring to fig. 3A and 3B, fig. 3A is a schematic vertical cross-sectional view illustrating a heating apparatus according to some embodiments of the present disclosure, and fig. 3B is a schematic vertical cross-sectional view illustrating a wafer heated by the heating apparatus according to some embodiments of the present disclosure. The heating device 300 includes a load-bearing platform 310 and a composite heating ring 320. The platen 310 is configured to hold a wafer 330, and the platen 310 may include a heated gas channel 311. The heating gas channel 311 is disposed in the supporting platform 310, and the heating gas channel 311 includes an input channel 311a and at least one gas groove 311 b. The gas grooves 311b are disposed on the carrying surface 310a of the carrying platform 310, and each gas groove 311b is communicated with the input channel 311 a. In some embodiments, each of the gas grooves 311b is in communication with each other.

The composite heating ring 320 is disposed on the carrying surface 310a, and the composite heating ring 320 extends along the edge 331 of the wafer 330. In some embodiments, the composite heating ring 320 extends equidistantly along the edge 331 of the wafer 330. In other embodiments, the composite heating ring 320 extends along the edge of the load-bearing platform 310. In some embodiments, the composite heating ring 320 may be secured to the load-supporting surface 310a by a damascene, locking, interference fit, snap fit, adhesive, other suitable securing method, or any combination thereof. In some embodiments, the composite heating ring 320 does not cover the gas grooves 311b on the bearing surface 310 a. The composite heating ring 320 includes a first heating ring 321 and a second heating ring 323. The bottom surface 321b of the first heating ring 321 directly contacts the carrying surface 310 a. The first heating ring 321 has a step structure, and the opening of the step structure faces the edge 331 of the wafer 330. In some embodiments, the first heating ring 321 has an L-shaped vertical cross-section. The second heating ring 323 is disposed in the opening of the stepped structure, and a top surface 323a of the second heating ring 323 is coplanar with a top surface 321a of the first heating ring 321. The first heating ring 321 is tightly combined with the second heating ring 323. In some embodiments, the first heating ring 321 and the second heating ring 323 can be coupled by embedding, locking, interference fit, clamping, adhesion, other suitable fixing methods, or any combination thereof. The first heating ring 321 is made of a metal material. In some embodiments, the first heating ring 321 is made of a stainless steel material. In some embodiments, the first melting point of the first heating ring 321 is substantially from 1400 ℃ to 1600 ℃. The second heating ring 323 is made of a ceramic material. The second melting point of the second heating ring 323 is greater than the first melting point of the first heating ring 321. In some embodiments, the second melting point of the second heating ring 323 is substantially greater than 2000 ℃. In some embodiments, the second melting point of the second heating ring 323 is substantially from 1400 ℃ to 3000 ℃.

When the wafer 330 is heated by the heating apparatus 300, the composite heating ring 320 may be directly or indirectly connected to a heater (not shown) to transfer heat energy generated by the heater and indirectly heat the wafer 330. Furthermore, the wafer 330 is covered on the composite heating ring 320, and a space is formed between the bottom surface 333 of the wafer, the composite heating ring 320 and the carrying surface 310a of the carrying platform 310. Through the heating gas channel 311, heating gas may be introduced into the heating apparatus 300 to heat the wafer 330. The heating gas is guided into the input channel 311a and is guided by the gas grooves 311b to fill the space formed by the wafer bottom surface 333, the composite heating ring 320 and the carrying surface 310a, so that the wafer 330 can be heated by the heating gas. When the heating gas is introduced into the space, the wafer 330 may form a curved shape with a central protrusion and a peripheral depression due to the force of the introduced heating gas and other stresses (e.g., bombardment of reaction gas plasma and/or thermal stress, etc.), so that the top surface 323a of the second heating ring 323 may directly contact the bottom surface 333 of the wafer, but the top surface 321a of the first heating ring 321 does not contact the bottom surface 333 of the wafer. Although the top surface 321a of the first heating ring 321 does not contact the bottom surface 333 of the wafer, the first heating ring 321 may indirectly heat the wafer 330 by convection between the radiant heat generated by the first heating ring 321 and the heat generated by the introduced heating gas. In some embodiments, in order to avoid the first heating ring 321 made of metal material directly contacting the bottom surface 333 of the wafer, the top surface 321a of the first heating ring 321 is lower than the top surface 323a of the second heating ring 323.

Referring to fig. 4A and 4B, fig. 4A is a schematic vertical cross-sectional view illustrating a heating apparatus according to some embodiments of the present disclosure, and fig. 4B is a schematic vertical cross-sectional view illustrating a wafer heated by the heating apparatus according to some embodiments of the present disclosure. The heating device 400 includes a load-bearing platform 410, a composite heating ring 420, and a plurality of supports 440. The platen 410 has a supporting surface 410a and a heating gas channel 411, wherein the heating gas channel 411 comprises an input channel 411a and at least one gas groove 411 b. The input channels 411a are disposed in the supporting platen 410a, and the gas grooves 411b are disposed on the supporting surface 410 a. Each gas groove 411b communicates with an input passage 411 a.

The composite heating ring 420 and the supporting member 440 are disposed on the carrying surface 410a, and the supporting member 440 is surrounded by the composite heating ring 420. In some embodiments, the supporting members 440 are uniformly disposed on the supporting surface 410 a. In some embodiments, the support 440 is not disposed on the gas groove 411 b. The wafer 430 is placed on the composite heating ring 420, and a space is formed between the wafer bottom surface 430, the composite heating ring 420 and the carrying surface 410 a.

The composite heating ring 420 extends along an edge 431 of the wafer 430. The composite heating ring 420 includes a first heating ring 421 and a second heating ring 423. The first heating ring 421 has a stepped structure, and an opening of the stepped structure faces the edge 431 of the wafer 430. In some embodiments, the first heating ring 421 has an L-shaped vertical cross-section. The second heating ring 423 is disposed in the opening of the stepped structure of the first heating ring 421. The first heating ring 421 and the second heating ring 423 are tightly combined. In some embodiments, the first heating ring 421 and the second heating ring 423 can be combined by means of embedding, locking, tight fitting, clamping, bonding, other suitable fixing methods, or any combination thereof. The first heating ring 421 is made of a metal material. In some embodiments, the first heating ring 421 is made of stainless steel material. In some embodiments, the first melting point of the first heating ring 421 is substantially from 1400 ℃ to 1600 ℃. The second heating ring 423 is made of a ceramic material. The second melting point of the second heating ring 423 is higher than the first melting point of the first heating ring 421. In one embodiment, the second melting point of the second heating ring 423 is greater than 2000 ℃. In some embodiments, the second melting point of the second heating ring 423 is substantially from 1400 ℃ to 3000 ℃. In some embodiments, the composite heating ring 420 may be secured to the bearing surface 410a by a snap fit, a lock, a tight fit, a snap fit, an adhesive, other suitable securing methods, or any combination thereof.

In some embodiments, the top surface 421a of the first heating ring 421 is coplanar with the top surface 440a of the support member 440. In some embodiments, the top surface 421a of the first heating ring 421, the top surface 423a of the second heating ring 423, and the top surface 440a of the support 440 are coplanar.

When the wafer 430 is heated by the heating apparatus 400, a heating gas is introduced into the space defined by the wafer 430, the composite heating ring 420 and the susceptor 410 through the heating gas passage 411 to contact the bottom surface 433 of the wafer and heat the wafer 430. When the heating gas is introduced into the space, the wafer 430 is curved such that the center of the wafer is raised and the periphery of the wafer is lowered due to the force of the heating gas, such that the top surface 423a of the second heating ring 423 can directly contact the bottom surface 433 of the wafer, but the top surface 421a of the first heating ring 421 does not contact the bottom surface 433 of the wafer. Although the top surface 421a of the first heating ring 421 does not contact the bottom surface 433 of the wafer, the first heating ring 421 can also indirectly heat the wafer 430 by convection between the radiant heat generated by the first heating ring 421 and the heated gas. In some embodiments, in order to prevent the first heating ring 421 and the supporting member 440 made of metal material from directly contacting the wafer bottom surface 433, the top surface 421a of the first heating ring 421 and the top surface 440a of the supporting member 440 are lower than the top surface 423a of the second heating ring 423.

Those skilled in the art will appreciate that not all advantages need be discussed herein, that no particular advantage is required for all embodiments or examples, and that other embodiments or examples may provide different advantages.

According to an aspect of the present disclosure, a heating device is provided. The heating device comprises a bearing platform and a composite heating ring. The carrying platform has a carrying surface, and the carrying platform is used for carrying the wafer. The composite heating ring is arranged between the bearing platform and the wafer and extends along the edge of the wafer. The composite heating ring includes a first heating ring and a second heating ring. The bottom surface of the first heating ring directly contacts the bearing surface. The first heating ring has a step-shaped structure, and an opening of the step-shaped structure faces the edge of the wafer. The first heating ring has a first melting point. The second heating ring is arranged in the opening of the ladder-shaped structure. Wherein the top surface of the second heating ring directly contacts the bottom surface of the wafer. The second heating ring has a second melting point, and the second melting point is greater than the first melting point.

According to an embodiment of the present disclosure, the top surface of the second heating ring is substantially coplanar with the top surface of the first heating ring.

According to another embodiment of the present disclosure, along the vertical cross-section, a ratio of a width of the top surface of the second heating ring to a width of the top surface of the composite heating ring is substantially greater than 0 and less than or equal to 0.6, and a ratio of a height of the second heating ring to a height of the composite heating ring is substantially greater than 0 and less than 1.

According to another embodiment of the present disclosure, the second heating ring is made of a ceramic material.

According to another embodiment of the present disclosure, the heating device further includes a plurality of supporting members, and the supporting members are disposed on the supporting surface.

According to yet another embodiment of the present disclosure, the supporting members are uniformly disposed on the supporting surface.

According to another aspect of the present disclosure, a heating device is provided. The heating device comprises a bearing platform, a plurality of supporting pieces and a composite heating ring. The bearing platform is provided with a bearing surface and a heating gas channel and is used for bearing the wafer. The heater body passage includes an inlet passage and at least one gas channel. The input channel is arranged in the bearing platform. The gas grooves are arranged on the bearing surface, and each gas groove is communicated with the input channel. The supporting member is arranged on the bearing surface. The composite heating ring is arranged on the bearing surface and extends along the edge of the wafer. The composite heating ring includes a first heating ring and a second heating ring. The bottom surface of the first heating ring directly contacts the bearing surface. The first heating ring has a step-shaped structure, and an opening of the step-shaped structure faces to the edge of the wafer. The first heating ring has a first melting point. The second heating ring is arranged in the opening of the ladder-shaped structure. Wherein the top surface of the second heating ring directly contacts the bottom surface of the wafer. The second heating ring has a second melting point, and the second melting point is greater than the first melting point.

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A heating device, comprising:

a bearing platform with a bearing surface for bearing a wafer; and

a composite heating ring disposed between the carrier platform and the wafer, the composite heating ring extending along an edge of the wafer, wherein the composite heating ring comprises:

a first heating ring, a bottom surface of the first heating ring directly contacting the carrying surface, and the first heating ring having a step structure, wherein an opening of the step structure faces the edge of the wafer, the first heating ring is made of a metal material, and the first heating ring has a first melting point; and

a second heating ring disposed in the opening, wherein a top surface of the second heating ring directly contacts a bottom surface of a wafer of the wafer, the second heating ring is made of a ceramic material, and the second heating ring has a second melting point greater than the first melting point.

2. The heating device of claim 1, wherein the top surface of the second heating ring is coplanar with a top surface of the first heating ring.

3. The heating apparatus as claimed in claim 2, wherein, along a direction of vertical cross-section, a ratio of a width of the top surface of the second heating ring to a width of a top surface of the composite heating ring is greater than 0 and less than or equal to 0.6, and a ratio of a height of the second heating ring to a height of the composite heating ring is greater than 0 and less than 1.

4. The heating device of claim 1, further comprising:

the supporting pieces are arranged on the bearing surface.

5. The heating apparatus as claimed in claim 4, wherein the supporting members are uniformly disposed on the carrying surface.

6. The heating device of claim 4, wherein the top surface of the second heating ring is higher than a top surface of the first heating ring and a top surface of each of the plurality of supporting members.

7. A heating device, comprising:

a carrier platform having a carrier surface and a heated gas channel for carrying a wafer, wherein the heated gas channel comprises:

an input channel arranged in the bearing platform; and

at least one gas groove arranged on the bearing surface, wherein each gas groove is communicated with the input channel;

the supporting pieces are arranged on the bearing surface; and

a composite heating ring disposed on the carrying surface and extending along an edge of the wafer, wherein the composite heating ring comprises:

8. The heating device of claim 7, wherein the top surface of the second heating ring is coplanar with a top surface of the first heating ring.

9. The heating apparatus as claimed in claim 8, wherein, along a direction of the vertical cross-section, a ratio of a width of the top surface of the second heating ring to a width of a top surface of the composite heating ring is greater than 0 and less than or equal to 0.6, and a ratio of a height of the second heating ring to a height of the composite heating ring is greater than 0 and less than 1.

10. The heating device of claim 7, wherein the top surface of the second heating ring is higher than a top surface of the first heating ring and a top surface of each of the plurality of supporting members.