CN109212641A - Phase type diffraction grating - Google Patents
Phase type diffraction grating Download PDFInfo
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- CN109212641A CN109212641A CN201811147241.3A CN201811147241A CN109212641A CN 109212641 A CN109212641 A CN 109212641A CN 201811147241 A CN201811147241 A CN 201811147241A CN 109212641 A CN109212641 A CN 109212641A
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- gate hole
- diffraction grating
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1828—Diffraction gratings having means for producing variable diffraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Thin Film Transistor (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to the technical field of diffraction gratings, in particular to a phase type diffraction grating, which comprises: a thin film substrate; the thin film substrate is uniformly provided with a plurality of gate holes with the same shape and size, wherein the gate holes are arranged on the thin film substrate in a regular array; the transverse period of the plurality of grid holes is P when the grid holes are arranged in a regular arrayxLongitudinal period of Py(ii) a The size of the gate hole and the lateral period PxAnd longitudinal period PyIn a preset proportion; the thickness of the thin film substrate is determined according to the value of the wavelength of the incident light, whereby the value of the absolute diffraction efficiency of + -1 order is relatively improved, and the absolute diffraction efficiencies of 0 order and higher order are effectively suppressed.
Description
Technical field
The present invention relates to Diffraction Grating Technology field more particularly to a kind of phase type diffraction gratings.
Background technique
Parallel black and white diffraction grating is usually used in diffraction grating, only has ± 1 grade of light advantageous in spectrum analysis
In analysis, but there is multiorder diffractive in black and white grating, that is, there is Advanced Diffraction, and in the application of extreme ultraviolet waveband
When, due to material be also for the absorption of this wave band it is more serious, technique and image design on have very big difficulty.
Current existing several single diffraction order gratings, the round hole including inclined rectangular opening and random size, there are also six
The single diffraction order grating in side shape hole, although Advanced Diffraction can be inhibited, so that 0 grade and ± 1 grade are only existed, ± 1 grade
Absolute diffraction efficiency is lower, highest also there was only 6.25%, also there is limitation in practical applications, how to obtain and spreads out inhibiting advanced
While penetrating, the diffraction grating that can also improve absolute diffraction efficiency is that current spectral analysis technique development and application field will solve
Certainly the problem of.
Summary of the invention
In view of the above problems, it proposes on the present invention overcomes the above problem or at least be partially solved in order to provide one kind
State the phase type diffraction grating of problem.
The embodiment of the present invention provides a kind of phase type diffraction grating, comprising:
Film-substrate；
The identical multiple gate hole of the shape and size uniformly opened up in the film-substrate, wherein the multiple gate hole exists
It arranges in the film-substrate in regular array；Lateral period when the multiple gate hole is arranged in regular array is Px, longitudinal
Period is Py；The size of the gate hole and lateral period PxWith longitudinal period PyIn preset ratio；The thickness of the film-substrate
Degree is determined according to the value of the wavelength of incident light.
Preferably, the shape of the gate hole is symmetrical hexagon, V-type, square or circle.
Preferably, when the shape of the gate hole is V-type, the direction of the first symmetry axis of V-type gate hole and the lateral period
It is identical, and the vertex of an opposite re-entrant angle of the V-type gate hole is connected by first symmetry axis with the vertex of salient angle, described
There is the first reference point on first symmetry axis, first reference point is a at a distance from the vertex of the salient angle, first reference
Point is a at a distance from the vertex of the re-entrant angle1, first reference point is two neighbours of first symmetry axis Yu the salient angle
The intersection point of the line on two vertex at angle, wherein a=Px/ 3, a1=Px/6。
Preferably, two vertex at two adjacent angles of the salient angle are located in a straight line with first reference point, and
The distance that first reference point is arrived on described two vertex respectively is b, b=Py/2。
Preferably, when the shape of the gate hole is symmetrical hexagon, symmetrical hexagon gate hole connection two-phase vertical angles
The direction of second symmetry axis is identical as the lateral direction in period, and the midpoint of the line on the vertex of the two-phase vertical angles is the
Two reference points, the distance that second reference point arrives the vertex of the two-phase vertical angles respectively is a, the symmetrical hexagon gate hole
The side length on relatively parallel both sides be 2a1, wherein a=Px/ 3, a1=Px/6。
Preferably, the distance on second reference point to the relatively parallel both sides of the symmetrical hexagon gate hole is respectively
B, b=Py/2。
Preferably, when the shape of the gate hole is square, the side length of square gate hole is a, and the square grid
One side length direction in hole is identical as the direction of lateral period or longitudinal period direction, wherein a=Px/3。
Preferably, when the shape of the gate hole is round, the radius of round gate hole is a, wherein a=Px/3。
Preferably, the film-substrate is transparent material, and the transparent material is specially silica, titanium dioxide, nitridation
Any one in silicon.
Preferably, the thickness d of the film-substrate and the relationship of lambda1-wavelength λ are as follows:
Wherein, δ2=0, kd δ1=π, c are the spread speed of light in a vacuum, k
For wave vector.
One or more technical solutions in the embodiment of the present invention, have at least the following technical effects or advantages:
The present invention provides a kind of phase type diffraction grating, including the shape that is uniformly opened up in film-substrate and film-substrate and
The identical multiple gate hole of size, wherein multiple gate hole is arranged in film-substrate in regular array, and gate hole is being in regular array
Lateral period when arrangement is Px, longitudinal period is Py, size and transverse direction period P of gate holexWith longitudinal period PyIn default ratio
Example, lateral period and longitudinal period when being arranged due to the size and gate hole of the gate hole in regular array are in preset ratio, according to
The absolute diffraction efficiency value that the calculation formula of the absolute diffraction efficiency of grating obtains ± 1 grade is relatively high, and 0 grade and advanced absolute
Diffraction efficiency is effectively suppressed.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, identical component is indicated with identical reference pattern.In the accompanying drawings:
Fig. 1 a shows the structural schematic diagram of V-type gate hole in the embodiment of the present invention；
Fig. 1 b shows the structural schematic diagram of V-type gate hole size in the embodiment of the present invention
Fig. 2 a shows the structural schematic diagram of the symmetrical hexagon gate hole in the embodiment of the present invention；
Fig. 2 b shows the structural schematic diagram of the symmetrical hexagon gate hole size in the embodiment of the present invention；
Fig. 3 shows the far-field diffraction pattern of the phase type diffraction grating in the embodiment of the present invention；
Fig. 4 shows the phase type diffraction grating diffration performance plot in the embodiment of the present invention.
Specific embodiment
Exemplary embodiments of the present disclosure are described in more detail below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
It is fully disclosed to those skilled in the art.
It is equal in the film-substrate 10 the embodiment of the invention provides a kind of phase type diffraction grating, including film-substrate 10
The even identical multiple gate hole of shape and size opened up, wherein regular array arrangement is presented in multiple gate hole in film-substrate；It is more
Lateral period when a gate hole is arranged in regular array is Px, longitudinal period is Py, size and transverse direction period P of gate holexThe longitudinal direction and
Period PyIt is in preset ratio, the thickness d of film-substrate 10 is determined according to the value of the wavelength of incident light.Wherein, adjacent gate hole it
Between lateral distance PxIt indicates, the fore-and-aft distance P between adjacent gate holeyIt indicates.
The shape of the gate hole is specifically as follows symmetrical hexagon, V-type, square or circle.
The size of the gate hole of these types of shape is introduced respectively below:
As shown in Figure 1, when for V-type gate hole, the first symmetry axis L1 of the V-type gate hole and lateral period PxDirection phase
Together, and the vertex of the one of the V-type gate hole opposite re-entrant angle 101 is connected by the first symmetry axis L1 with the vertex of salient angle 102, and should
First reference point O of V-type gate hole1On first symmetry axis L1, first reference point O1To the vertex of the salient angle 102 away from
From for a, first reference point O1Distance to the vertex of the re-entrant angle 101 is a1, first reference point O1It is first symmetry axis L1
With the intersection point of the line L2 on two vertex at two adjacent angles of the salient angle 102, and meet a=Px/ 3, a1=Px/6。
Preferably, two vertex at two adjacent angles of the salient angle 102 of the V-type gate hole and first reference point O1Positioned at one
On straight line, and first reference point O is arrived on two vertex respectively1Distance be b, and meet b=Py/2。
As shown in Fig. 2, the symmetrical hexagon gate hole connects two-phase vertical angles 103,104 when gate hole is symmetrical hexagon
Vertex the second symmetry axis L3 direction and lateral period PxDirection it is identical, the vertex of the two-phase vertical angles 103,104
The midpoint of line is the second reference point O2, second reference point O2The distance for arriving the vertex on the two opposite top 103,104 respectively is a,
The side length on the relatively parallel both sides of the symmetrical hexagon gate hole is 2a1, wherein a=Px/ 3, a1=Px/6。
In addition, second reference point O2Distance to the relatively parallel both sides of symmetrical hexagon gate hole is respectively b, b=
Py/2。
When gate hole is square, the side length of the square gate hole is a, and one side length direction and the cross of square gate hole
It is identical to period direction or direction of longitudinal period, and, a=Px/ 3, it does not just illustrate specifically in the present invention.
When gate hole is round, the radius of the circle gate hole is a, wherein a=Px/ 3, just do not make in the present invention specific
Diagram.
Above-mentioned V-type gate hole, symmetrical hexagon gate hole, square gate hole, the minimum feature of the size of round gate hole are in Asia
Micron is between micron dimension.
The film-substrate 10 is specifically transparent material, which can be in silica, titanium dioxide, silicon nitride
Any one.
Using above-mentioned phase type diffraction grating, using normal incidence mode, and incident wavelength is 532nm, is formed such as Fig. 3 institute
The far-field diffraction pattern shown, (η=0) only exists 1 grade of diffraction specifically on ξ axis, and 0 grade and Advanced Diffraction are effectively suppressed, adopt
It with the phase type diffraction grating in the present invention, can be used as the beam splitter of monochromator or spectrometer, to exclude humorous
Wave pollution.
For the phase type diffraction grating, the formula of absolute diffraction efficiency:
Wherein, m is diffraction time, and d is the thickness of grating, the refractive index n=1+ δ of material1+iδ2, NxAnd NyIt respectively represents
Lateral gate hole number and longitudinal gate hole number, C is constant, A0It is the area of single gate hole, A is the area of each periodic unit, A
=PxPy。
For V-type gate hole, the area of single gate hole
As m=0,
Then
C2Nx 2Ny 2A0 2For coefficient entry,For with
The relevant item of the thickness d of film-substrate, due to refractive index n=1+ δ1+iδ2, it is seen then that the thickness d of the film-substrate is and refractive index
It is relevant, and refractive indexλ is wavelength, and c is the spread speed of light in a vacuum, it is seen then that the thickness d of the film-substrate
Be it is relevant to wavelength X, under different wavelength, thus it is possible to vary the thickness d of the film-substrate so that δ2=0, kd δ1=π, k are
Wave vector, so that the value of item relevant to the thickness d of film-substrate is 0, i.e.,Thus to obtain I (0)=0, it is suppressed that 0 grade
Diffraction.
Under the conditions of same, i.e. δ2=0, kd δ1=π, as m ≠ 0, the formula of absolute diffraction efficiency is as follows:
Wherein, it when m=± 2, ± 3 ..., is obtained according to the property of s i nc functionThe light intensity of the absolute diffraction obtained as a result, is 0, to inhibit Advanced Diffraction.
When ± 1 m=,For amplitude grating before, do not draw
When entering item relevant to the thickness d of the film-substrate, light intensity is increased.
For symmetrical hexagon, square, circular gate hole structure, above-mentioned formula is equally applicable.
As it can be seen that the phase type diffraction grating can inhibit 0 grade and Advanced Diffraction, and improve ± 1 grade of diffraction efficiency.
It is illustrated in figure 4 the far field construction performance plot in phase type diffraction grating direction η=0 on ξ axis, it can be with by the figure
Find out, 1 grade of diffraction efficiency is 27.72%, although there is 5 grades of diffraction, 5 grades of the diffraction relative to 1 grade of diffraction efficiency very
It is low therefore negligible.
One or more technical solutions in the embodiment of the present invention, have at least the following technical effects or advantages:
The present invention provides a kind of phase type diffraction grating, including the multiple shapes uniformly opened up in film-substrate and film-substrate
Shape and the identical gate hole of size, wherein multiple gate hole is arranged in film-substrate in regular array, and gate hole is being in regular array
When arrangement all the lateral period be Px, longitudinal period is Py, size and transverse direction period P of gate holexWith longitudinal period PyIn default ratio
Example, lateral period and longitudinal period when being arranged due to the size and gate hole of the gate hole in regular array are in preset ratio, film
The thickness of substrate is adjusted according to the value of the wavelength of incident light, obtains ± 1 grade according to the calculation formula of the absolute diffraction efficiency of grating
Absolute diffraction efficiency value it is opposite improve, 0 grade and advanced absolute diffraction efficiency are effectively suppressed.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of phase type diffraction grating characterized by comprising
Film-substrate；
The identical multiple gate hole of the shape and size uniformly opened up in the film-substrate, wherein the multiple gate hole is described
It arranges in film-substrate in regular array；Lateral period when the multiple gate hole is arranged in regular array is Px, longitudinal period
For Py；The size of the gate hole and lateral period PxWith longitudinal period PyIn preset ratio；The thickness root of the film-substrate
It is determined according to the value of the wavelength of incident light.
2. diffraction grating as described in claim 1, which is characterized in that the shape of the gate hole is symmetrical hexagon, V-type, just
It is rectangular or round.
3. diffraction grating as claimed in claim 2, which is characterized in that when the shape of the gate hole is V-type, the of V-type gate hole
One symmetry axis is identical as the lateral direction in period, and first symmetry axis is by an opposite re-entrant angle of the V-type gate hole
Vertex be connected with the vertex of salient angle, have the first reference point on first symmetry axis, first reference point with it is described convex
The distance on the vertex at angle is a, and first reference point is a at a distance from the vertex of the re-entrant angle1, first reference point is institute
State the intersection point of the line on two vertex at two adjacent angles of the first symmetry axis and the salient angle, wherein a=Px/ 3, a1=Px/6。
4. diffraction grating as claimed in claim 3, which is characterized in that two vertex at two adjacent angles of the salient angle with it is described
First reference point is located in a straight line, and it is b, b=P that the distance of first reference point is arrived on described two vertex respectivelyy/2。
5. diffraction grating as claimed in claim 2, which is characterized in that right when the shape of the gate hole is symmetrical hexagon
Claim the direction of the second symmetry axis of hexagon gate hole connection two-phase vertical angles identical as the lateral direction in period, the two-phase
The midpoint of the line on the vertex of vertical angles is the second reference point, and second reference point arrives the vertex of the two-phase vertical angles respectively
Distance be a, the side length on the relatively parallel both sides of the symmetrical hexagon gate hole is 2a1, wherein a=Px/ 3, a1=Px/
6。
6. diffraction grating as claimed in claim 5, which is characterized in that second reference point to the symmetrical hexagon gate hole
The distance on relatively parallel both sides be respectively b, b=Py/2。
7. diffraction grating as claimed in claim 2, which is characterized in that when the shape of the gate hole is square, square
The side length of gate hole is a, and one side length direction of the square gate hole and the direction of lateral period or longitudinal period side
To identical, wherein a=Px/3。
8. diffraction grating as claimed in claim 2, which is characterized in that when the shape of the gate hole is round, round gate hole
Radius be a, wherein a=Px/3。
9. diffraction grating as described in claim 1, which is characterized in that the film-substrate is transparent material, the transparent material
Material is specially silica, titanium dioxide, any one in silicon nitride.
10. diffraction grating as described in claim 1, which is characterized in that the thickness d and lambda1-wavelength λ of the film-substrate
Relationship it is as follows:
N=1+ δ1+iδ2, wherein δ2=0, kd δ1=π, c are the spread speed of light in a vacuum, and k is wave vector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811147241.3A CN109212641B (en) | 2018-09-29 | 2018-09-29 | Phase type diffraction grating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811147241.3A CN109212641B (en) | 2018-09-29 | 2018-09-29 | Phase type diffraction grating |
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| CN109212641B CN109212641B (en) | 2021-07-13 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112691297A (en) * | 2020-11-19 | 2021-04-23 | 成都恒波医疗器械有限公司 | Saddle-shaped microwave irradiator |
| CN113326560A (en) * | 2021-08-02 | 2021-08-31 | 中国海洋大学 | Design method of open-hole breakwater and breakwater |
| CN114637067A (en) * | 2022-03-15 | 2022-06-17 | 北京驭光科技发展有限公司 | Diffractive optical waveguide and display device |
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| CN103901519A (en) * | 2014-04-22 | 2014-07-02 | 中国工程物理研究院激光聚变研究中心 | Rectangular-hole single-stage diffraction grating |
| WO2014108670A1 (en) * | 2013-01-08 | 2014-07-17 | Bae Systems Plc | Diffraction gratings and the manufacture thereof |
| CN106094086A (en) * | 2016-08-02 | 2016-11-09 | 中国科学院微电子研究所 | Transmission grating |
| CN106597588A (en) * | 2016-12-20 | 2017-04-26 | 中国科学院微电子研究所 | Transmission grating |
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| KR20090022596A (en) * | 2007-08-31 | 2009-03-04 | 삼성전기주식회사 | Diffraction type optical modulator and display apparatus including this |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112691297A (en) * | 2020-11-19 | 2021-04-23 | 成都恒波医疗器械有限公司 | Saddle-shaped microwave irradiator |
| CN112691297B (en) * | 2020-11-19 | 2022-03-04 | 成都恒波医疗器械有限公司 | Saddle-shaped microwave irradiator |
| CN113326560A (en) * | 2021-08-02 | 2021-08-31 | 中国海洋大学 | Design method of open-hole breakwater and breakwater |
| CN114637067A (en) * | 2022-03-15 | 2022-06-17 | 北京驭光科技发展有限公司 | Diffractive optical waveguide and display device |
| CN114637067B (en) * | 2022-03-15 | 2022-09-02 | 北京驭光科技发展有限公司 | Diffractive optical waveguide and display device |
| US11988838B2 (en) | 2022-03-15 | 2024-05-21 | Jiaxing Uphoton Optoelectronics Technology Co., Ltd. | Diffractive optical waveguide and display device |
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| CN109212641B (en) | 2021-07-13 |
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