CN109211842A - A kind of Terahertz frequency range material reflection coefficient calibration measuring device and method - Google Patents
A kind of Terahertz frequency range material reflection coefficient calibration measuring device and method Download PDFInfo
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- 230000005684 electric field Effects 0.000 claims abstract description 56
- 230000005540 biological transmission Effects 0.000 claims abstract description 54
- 238000002310 reflectometry Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 230000010287 polarization Effects 0.000 claims description 20
- 238000000691 measurement method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 7
- 239000004809 Teflon Substances 0.000 claims description 5
- 229920006362 Teflon® Polymers 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
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- 238000001228 spectrum Methods 0.000 description 6
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 6
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N2021/558—Measuring reflectivity and transmission
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- Spectroscopy & Molecular Physics (AREA)
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- General Health & Medical Sciences (AREA)
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Abstract
The present invention relates to a kind of Terahertz frequency range material reflection coefficient calibration measuring device and methods, the THz wave transmitted electric fields intensity whether there is or not calibration plate is obtained respectively by THz wave transmission measurement, the transmission coefficient of calibration plate is obtained according to the THz wave transmitted electric fields intensity of acquisition, and then obtains the complex refractivity index of calibration plate；The THz wave reflected field intensity reflected respectively under same incident angle by THz wave reflection measurement acquisition calibration plate and measured material plate；According to the incident angle of the complex refractivity index of calibration plate and THz wave reflection measurement, the reflection coefficient of calibration plate is calculated；In conjunction with the proportionate relationship between calibration plate and the measured material plate THz wave reflected field intensity reflected and reflection coefficient, the reflection coefficient of measured material plate is calculated.The device and method can be in the case where can not accurately measure terahertz pulse power, valid metric a variety of materials reflecting properties, quickly and conveniently obtain measured material plate in the reflection coefficient and reflectivity of Terahertz frequency range.
Description
Technical field
The present invention relates to Terahertz Technology field more particularly to a kind of Terahertz frequency range material reflection coefficient calibration measurement dresses
It sets and method.
Background technique
Terahertz pulse typically refers to wavelength from 30 microns to 3 millimeter, the electromagnetic wave of frequency Terahertz from 0.1 to 10.Too
Hertz pulse is between infrared ray and millimeter wave, and spectral range is comparatively wide.Because terahertz pulse is in photonics and electricity
The transitional region that son is learned, so it is capable of providing the information that the traditional detections such as visible light or microwave mode cannot provide, therefore
It has great application prospect in fields such as physics, chemistry and biomedicines.
Currently, lacking the power meter of the unified Terahertz frequency range by metering on the market, therefore, it is difficult to accurately measure too
The power of hertz pulse, and there is an urgent need to understand a variety of materials in Terahertz in the research and development of THz devices and the relevant technologies
Transmission, reflecting properties and the electromagnetic parameter thus developed out of the performance of frequency range, especially a variety of materials.It is weak to terahertz pulse
For the material of absorption, if transmission performance is preferable, the material easily can be deduced out by measuring its transmissivity
Refractive index, and for material preferable for reflecting properties, in the case where currently can not accurately measure terahertz pulse power,
It is difficult to accurately obtain a variety of materials in Terahertz frequency range reflection coefficient.
Summary of the invention
(1) technical problems to be solved
The technical problem to be solved by the present invention is to solve under conditions of can not accurately measure terahertz pulse power, it is difficult to
The accurate a variety of materials that obtain are the Terahertz frequency range reflection coefficient and reflectivity the problem of.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides a kind of Terahertz frequency range material reflection coefficients to calibrate measurement dress
It sets, comprising: calibration plate, transmission measurement module, reflection measurement module and computing module；
The transmission measurement module is used to pass through the acquisition of THz wave transmission measurement, and whether there is or not the THz waves of the calibration plate
Transmitted electric fields intensity；The reflection measurement module is used to obtain the calibration plate and measured material by THz wave reflection measurement
The THz wave reflected field intensity that plate reflects under same incident angle；The computing module is used for according to whether there is or not the calibrations
The THz wave transmitted electric fields intensity of plate obtains the complex refractivity index of the calibration plate, and in conjunction with the calibration plate and measured material plate
It is anti-under the incident angle to resolve the measured material plate for the THz wave reflected field intensity ratio and incident angle of reflection
Penetrate coefficient and reflectivity.
Preferably, the reflection measurement module includes gas chamber, substrate, THz wave transmitting module, THz wave reception mould
Block and sample holder；
The substrate is set in the gas chamber, and the substrate is equipped with arcuate guide tracks；The sample holder is set to the bow
The center point of shape guide rail, for placing sample；The THz wave transmitting module and the THz wave receiving module point
Not Tong Guo straight rail be set to the arcuate guide tracks, the center point of the arcuate guide tracks is fixed in two described equal one end of straight rail,
One end is across the arcuate guide tracks and can move along the tangential of the arcuate guide tracks arc, for driving the THz wave to emit
Module and the THz wave receiving module move in a circle around the sample holder.
Preferably, the transmission measurement module include THz wave transmitting antenna, first to fourth paraboloidal mirror, silicon wafer,
Electro-optic crystal, quarter-wave plate, condenser lens, wollaston prism and difference photodetector；
The THz wave transmitting antenna is for receiving pumping laser and exciting generation terahertz pulse；First parabolic
Face mirror is for receiving terahertz pulse and collimating, and the second paraboloidal mirror is for focusing the terahertz pulse of collimation to form placement quilt
The focus measurement point of sample；Third paraboloidal mirror is used to collimate again by the terahertz pulse after focus measurement point, the
Four paraboloidal mirrors are used to converge the terahertz pulse collimated again；The silicon wafer is used to reflect external detection light beam, and will
Detection light beam converges at electro-optic crystal with the terahertz pulse for passing through the silicon wafer, the laser after forming Terahertz Electric Field Modulated；
The quarter-wave plate is used for the phase difference to ordinary light and non-ordinary light introducing pi/2 in modulated laser, the focusing
Lens are used to introduce the laser convergence of phase difference, and the wollaston prism is used to make the laser beam splitter of convergence and converges respectively
In the difference photodetector, the difference photodetector is used to carry out differential ference spiral to the terahertz signal of sample
Detection.
Preferably, the calibration plate is high resistant silicon wafer or teflon plate.
The present invention also provides a kind of Terahertz frequency range material reflection coefficients to calibrate measurement method, comprising the following steps:
S1, THz wave transmission measurement obtain THz wave transmitted electric fields when whether there is or not calibration plates as sample respectively
Intensity；
S2, according to obtain the presence or absence of calibration plate when THz wave transmitted electric fields intensity ratio obtain the transmission system of calibration plate
Number, and then obtain the complex refractivity index of calibration plate；
S3, THz wave reflection measurement obtain calibration plate and measured material plate reflects too respectively under same incident angle
Hertz wave reflected field intensity；
S4, according to the complex refractivity index of calibration plate and the incident angle of THz wave reflection measurement, calculate calibration plate and enter at this
Reflection coefficient under firing angle degree；
S5, in conjunction with the ratio between calibration plate and measured material plate the THz wave reflected field intensity reflected and reflection coefficient
Example relationship calculates reflection coefficient of the measured material plate under the incident angle.
It preferably, will be when whether there is or not calibration plates as sample when calculating the complex refractivity index of calibration plate in the step S2
THz wave transmitted electric fields intensity compare, obtain the transmission coefficient expression formula of calibration plate are as follows:
Wherein, t1Indicate the transmission coefficient of the calibration plate,Indicate that the transmitted electric fields measured when the calibration plate are strong
Degree,The transmitted electric fields intensity measured when indicating without the calibration plate, ω indicate frequency, ρ1(ω) indicates transmission when calibration plate
The amplitude of electric field strength, ρ0(ω) indicates transmitted electric fields intensity amplitude, φ when no calibration plate1(ω) indicates transmission when calibration plate
The phase of electric field strength, φ0(ω) indicates the phase of transmitted electric fields intensity when no calibration plate, n0Indicate Terahertz when no calibration plate
Wave propagates the refractive index in passed through space,Indicate the complex refractivity index of calibration plate；L indicates that the thickness of the calibration plate, c indicate
The light velocity；The complex refractivity index of calibration plate is calculated using the transmission coefficient expression formula of calibration plate.
Preferably, the incident angle of THz wave reflection measurement is obtained in the step S4 with the following method:
Using the accessory plate with calibration plate difference transmissivity, THz wave transmission measurement obtains accessory plate as sample
When THz wave transmitted electric fields intensity；
The transmission coefficient of accessory plate is obtained according to the THz wave transmitted electric fields intensity ratio whether there is or not accessory plate, and then is obtained
The complex refractivity index of accessory plate；
THz wave reflection measurement obtains and the auxiliary under calibration plate and the same incident angle of measured material plate in step S3
The THz wave reflected field intensity of plate reflection；
According to the proportionate relationship between calibration plate and the accessory plate THz wave reflected field intensity reflected and reflection coefficient
And fresnel formula, calculate the incident angle of THz wave reflection measurement.
Preferably, in the step S5, the THz wave reflected field intensity of calibration plate and the reflection of measured material plate and anti-
The proportionate relationship penetrated between coefficient includes:
The reflection coefficient of the calibration plate and the THz wave reflected field strength relationships of reflection are as follows:
Wherein, r1P and r1S respectively indicates terahertz pulse with θ0P and two kinds of s polarizations when the angle incidence calibration plate
Reflection coefficient under state；WithThe reflected field under two kinds of polarization states of p and s after respectively indicating theoretically total reflection is strong
Degree；WithRespectively indicate the reflected field intensity under two kinds of polarization states of the p reflected through the calibration plate measured and s；
The reflection coefficient of measured material plate and the THz wave reflected field strength relationships of reflection are as follows:
Wherein,WithTerahertz pulse is respectively indicated with θ0Two kinds of polarization shapes of p and s when angle incidence measured material plate
Reflection coefficient under state；WithIt respectively indicates anti-under two kinds of polarization states of the p reflected through measured material plate measured and s
Radio field intensity；
And then obtain the relational expression of the reflection coefficient of calibration plate and the reflection coefficient of measured material plate are as follows:
Preferably, further includes:
S6, change THz wave incident angle, repeating said steps S3 to S5 calculates measured material plate under the incident angle
Reflection coefficient.
(3) beneficial effect
Above-mentioned technical proposal of the invention has the advantages that the present invention provides a kind of reflections of Terahertz frequency range material
Number calibration measuring device, including transmission measurement module and reflection measurement module, joint transmission, reflective tera-hertz spectra are surveyed
The device of die trial block using calibration plate material therefor to terahertz pulse while have the characteristic of transmission, reflecting properties, in nothing
In the case that method accurately measures terahertz pulse power, measured material plate is carried out with the theoretical reflectance coefficient of calibration plate indirectly
The calibration of reflected terahertz hereby impulse electric field strength, and then determine the reflection coefficient and reflectivity of Terahertz frequency range a variety of materials,
Reflection system of the measured material under different terahertz pulse incident angles can be obtained especially by device proposed by the present invention
Number, to realize in the case where currently can not accurately measure terahertz pulse power, valid metric a variety of materials are reflexive
The final purpose of energy.
The present invention also provides a kind of Terahertz frequency range material reflection coefficients to calibrate measurement method, and this method has by measurement
Transmission-type terahertz time-domain spectroscopy without calibration plate, calculates the complex refractivity index of calibration plate, in conjunction with the calibration plate of measurement and tested
The reflective terahertz time-domain spectroscopy of plate of material, obtains the reflection coefficient of calibration plate, further calculates the anti-of measured material plate
Penetrate coefficient.This method can quickly and conveniently obtain measured material plate in the reflection coefficient and reflectivity of Terahertz frequency range.
Detailed description of the invention
Fig. 1 is transmission measurement module (containing sample) structural schematic diagram in the embodiment of the present invention one；
Fig. 2 is the reflection measurement modular structure schematic diagram in the embodiment of the present invention one；
Fig. 3 is that Terahertz frequency range material reflection coefficient calibrates measurement method block diagram in the embodiment of the present invention two.
In figure: 1: THz wave transmitting antenna；2: the first paraboloidal mirrors；3: the second paraboloidal mirrors；4: sample；5: the
Three paraboloidal mirrors；6: the four paraboloidal mirrors；7: silicon wafer；8: electro-optic crystal；9: quarter-wave plate；10: condenser lens；11: wet
Lars prism；12: difference photodetector；
20: THz wave transmitting module；21: THz wave receiving module；22: sample holder；23: fixation hole；24: gas
Room；25: substrate；26: arcuate guide tracks.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Embodiment one
The embodiment of the invention provides a kind of Terahertz frequency range material reflection coefficients to calibrate measuring device, comprising: calibration plate,
Transmission measurement module, reflection measurement module and computing module.Wherein, transmission measurement module is used to pass through THz wave transmission measurement
Whether there is or not the THz wave transmitted electric fields intensity of calibration plate for acquisition；Reflection measurement module by THz wave reflection measurement for being obtained
The THz wave reflected field intensity that calibration plate and measured material plate reflect under same incident angle；Computing module is used for basis
Whether there is or not the complex refractivity indexes that the THz wave transmitted electric fields intensity of calibration plate obtains calibration plate, and combine calibration plate and measured material plate
The THz wave reflected field intensity ratio and incident angle of reflection resolve the reflection coefficient and reflectivity of measured material plate.Meter
Calculating module can be calculated using the calculating such as computer equipment, can also be by manually being calculated.
It is saturating that Terahertz frequency range material reflection coefficient provided by the invention calibrates measuring device set terahertz time-domain spectroscopy
Formula measurement module and the reflective measurement module of terahertz time-domain spectroscopy are penetrated, using can transmit but also reflected terahertz hereby pulse is determined
Target material carries out measured material plate calibration to it, obtains calibration plate reflection coefficient according to the electric field strength of measurement, and further
Measured material plate reflection coefficient is calculated, is solved currently in the case where can not accurately measure terahertz pulse power, accurately
It measures a variety of materials and is suitable for a variety of materials the Terahertz frequency range reflection coefficient the problem of, and measured material can be measured not
With the reflection coefficient under terahertz pulse incident angle.
Preferably, high resistant silicon wafer or teflon plate can be used in calibration plate.The resistivity of high resistant silicon wafer is higher, generally
It 10000 ohm or more, can transmit but also reflected terahertz hereby pulse, and easy processing, thickness is easy measurement, is conducive to subsequent solution
Calculate reflection coefficient.
In a preferred embodiment, as shown in Figure 1, transmission measurement module (i.e. terahertz time-domain spectroscopy transmission-type
Measurement module) it include THz wave transmitting antenna 1, first to fourth paraboloidal mirror, silicon wafer 7, electro-optic crystal 8, quarter-wave
Piece 9, condenser lens 10, wollaston prism 11 and difference photodetector 12.Wherein, THz wave transmitting antenna 1 is for connecing
It receives pumping laser (pumping laser can be generated by femto-second laser), and excites generation terahertz pulse, terahertz pulse outgoing, according to
It is secondary to pass through first to fourth paraboloidal mirror, specifically:
As shown in Figure 1, the first paraboloidal mirror 2 is for receiving terahertz pulse and collimating terahertz pulse, collimation is too
The second paraboloidal mirror of hertz pulse input 3, the second paraboloidal mirror 3 is used to receive the terahertz pulse of collimation, and too by collimation
Hertz pulse concentration, forms the focus measurement point for placing sample 4.Sample 4 is nothing or calibration plate in the present embodiment.The
Three paraboloidal mirrors 5 are used to receive the terahertz pulse by after focus measurement point, and input after terahertz pulse is collimated again
Terahertz pulse is converged for receiving the terahertz pulse collimated again, is worn by the 4th paraboloidal mirror 6, the 4th paraboloidal mirror 6
Saturating silicon wafer 7.It collimated, focused twice using first to fourth paraboloidal mirror, the focus measurement point for being easy to measure can be formed.
Silicon wafer 7 is converged at for reflecting external detection light beam, and by light beam is detected with the terahertz pulse for passing through silicon wafer 7
Electro-optic crystal 8, the laser after forming Terahertz Electric Field Modulated.Detection light beam and pumping laser pulse herein reaches electro-optic crystal
Time synchronization.Quarter-wave plate 9 is used for the ordinary light (o light) and non-ordinary light (e light) introducing pi/2 in modulated laser
Phase difference, consequently facilitating working as the linearly polarized light vertical incidence quarter-wave plate, and the axial plane of the polarization of light and wave plate
When at θ=45 °, emergent light is circularly polarized light.Condenser lens 10 is used to introduce the laser convergence after phase difference, inputs Wo Lasi
Pause prism 11, and wollaston prism 11 is used to make the laser beam splitter of convergence, and converges at difference photodetector 12 respectively.Difference
Photodetector 12 is used to carry out differential ference spiral detection to the terahertz signal of sample 4, obtains transmitted through sample 4
Terahertz signal.Preferably, ZnTe crystal can be used in electro-optic crystal 8.
In use, dry nitrogen is filled with by part shown in dotted line in Fig. 1 is closed, to exclude water vapor in air etc. to too
The absorption of hertz pulse.Pumping laser inspires terahertz pulse, Terahertz after the THz wave transmitting antenna 1 in Fig. 1
Pulse is passed through the collimation of the first paraboloidal mirror 2 and the second paraboloidal mirror 3 respectively, is converged at sample 4, through sample
After 4, after the collimation of third paraboloidal mirror 5 and the 4th paraboloidal mirror 6, convergence, silicon wafer 7 is penetrated, and is reflected by silicon wafer 7
External detection light beam converges on electro-optic crystal 8, passes through quarter-wave plate 9 by the exploring laser light after Terahertz Electric Field Modulated
Afterwards, exploring laser light beam splitting and is converged on difference photodetector 12 respectively after wollaston prism 11 by condenser lens 10
Face, to carry out the demodulation detection of 4 terahertz signal of sample.
High resistant silicon wafer as calibration plate is placed in sample 4 in terahertz time-domain spectroscopy transmission-type measurement module
Place is set, high resistant silicon wafer is vertical with THz wave transmission direction, have transmission terahertz light spectrometry when high resistant silicon wafer；Then
Remove high resistant silicon wafer, allow terahertz pulse by free space, obtain its transmitted spectrum, by the tera-hertz spectra electricity of secondary acquisition
Field intensity compares the transmission coefficient for obtaining high resistant silicon wafer, and then the birefringence of high resistant silicon wafer is calculated by fresnel formula
Rate.
It should be noted that this embodiment describes a kind of transmission measurement modules, in actual use, other can also be used
Transmission measurement module can accurately measure the transmission tera-hertz spectra whether there is or not calibration plate, it is strong to measure tera-hertz spectra transmitted electric fields
Degree.
In a preferred embodiment, as shown in Fig. 2, reflection measurement module includes gas chamber 24, substrate 25, Terahertz
Wave transmitting module 20, THz wave receiving module 21 and sample holder 22.Wherein, gas chamber 24 is hollow closed structure；Substrate 25
In gas chamber 24, substrate 25 is equipped with arcuate guide tracks 26；Sample holder 22 is set to the center point of arcuate guide tracks 26, for placing
Sample (i.e. calibration plate or measured material plate)；THz wave transmitting module 20 and THz wave receiving module 21 lead to respectively
A straight rail is crossed set on arcuate guide tracks 26, the center point of arcuate guide tracks 26 is fixed in two equal one end of straight rail, and the other end is across bow
Shape guide rail 26 can simultaneously be moved along the tangential of 26 arc of arcuate guide tracks, for driving THz wave transmitting module 20 and THz wave to connect
It receives module 21 to move in a circle around sample holder 22, facilitates debugging and the accurate positionin of sample.
It preferably, further include optical fiber laser, pumping laser is transmitted to THz wave hair by optical fiber by optical fiber laser
The transmitting antenna in module 20 is penetrated, exploring laser light is transmitted to by the receiving antenna in THz wave receiving module 21 by optical fiber,
Therefore test angle can easily be accommodated, and when changing incidence angle and corresponding angle of reflection, adjust two straight rail one end in arcuate guide tracks 26
Position.
Preferably, sample holder 22 is equipped with close to the side of THz wave transmitting module 20 and THz wave receiving module 21
Opening, the other side are equipped with fixed device.In use, calibration plate or measured material plate, which pass through fixed device, is set to opening, terahertz
Hereby wave transmitting module 20 and THz wave receiving module 21 be towards sample holder 22, and THz wave transmitting module 20 is to opening
Emit THz wave, THz wave is reflected in opening, is reflected into THz wave receiving module 21.
Preferably, THz wave transmitting module 20 and THz wave receiving module 21 are respectively arranged on two straight rails, and can edge
Straight rail is mobile, i.e., straight rail allows THz wave transmitting module 20 and THz wave receiving module 21 along the diameter of arcuate guide tracks 26
To movement, so that focus is converged at sample surfaces.
Preferably, 26 side of arcuate guide tracks is equipped with multiple fixation holes 23 being spaced apart, and is bending for fixing two straight rails
The position of shape guide rail 26.It is further preferred that 26 side of arcuate guide tracks is additionally provided with the scale of instruction angle, adjust with can be convenient
The position of THz wave transmitting module 20 and THz wave receiving module 21, to change the incidence angle of THz wave and corresponding
Angle of reflection.
Preferably, gas chamber 24 is for being filled with dry nitrogen, to exclude the absorption to it such as vapor in Terahertz transmission
It influences.
It is further preferred that gas chamber 24 is transparent cabinet, convenient for observation adjustment.Substrate 25 is set to 24 one side wall of gas chamber vertically
Inside, THz wave transmitting module 20 and THz wave receiving module 21 are located at 22 lower section of sample holder, put in sample holder 22
When setting calibration plate or measured material plate, it can guarantee resetting essence by the support on 22 surface of gravity and sample holder of sample
Degree.
In use, dry nitrogen is filled in closed gas chamber 24, the THz wave transmitting of connection pumped fiber laser
Module 20 launches terahertz pulse, is then irradiated in the high resistant silicon wafer (calibration plate) that sample holder 22 is set up respectively in two times
On the lower surface of measured material plate, the terahertz pulse after being reflected by it enters THz wave receiving module 21 and carries out spectrum
It collects.It can adjust THz wave incidence angle and corresponding angle of reflection according to the scale of instruction angle, fixation hole 23 utilized after adjustment
It cooperates with the fixing bolt of straight rail one end, fixed THz wave transmitting module 20 and 21 position of THz wave receiving module.
The reflection measurement module facilitates adjusting angle, and during capable of ensuring one-shot measurement calibration plate and measured material plate, each portion
Part does not occur to change relatively, without adjusting 21 position of THz wave transmitting module 20 and THz wave receiving module.
In a preferred embodiment, which further includes accessory plate, and accessory plate is different from calibration plate transmissivity, can
Using the silicon wafer or teflon plate with calibration plate difference transmissivity.Transmission measurement module is used to transmit by THz wave and survey
Whether there is or not the THz wave transmitted electric fields intensity of accessory plate for amount acquisition；Reflection measurement module by THz wave reflection measurement for being obtained
It takes and calibration plate and measured material plate the THz wave reflected field intensity that accessory plate reflects under same incident angle；Calculate mould
Block is used in conjunction with accessory plate and determine according to whether there is or not the complex refractivity indexes that the THz wave transmitted electric fields intensity of accessory plate obtains accessory plate
The THz wave reflected field intensity ratio and fresnel formula of target reflection calculate measurement Terahertz reflection measurement incidence angle
Degree, more precisely to calculate reflection coefficient and reflectivity.
Embodiment two
As shown in figure 3, the present embodiment two provides a kind of Terahertz frequency range material reflection coefficient calibration measurement method, can adopt
It is measured with the Terahertz frequency range material reflection coefficient calibration measuring device as described in above-mentioned any embodiment, including following
Step:
S1, THz wave transmission measurement obtain THz wave transmitted electric fields when whether there is or not calibration plates as sample respectively
Intensity.
S2, according to obtain the presence or absence of calibration plate when THz wave transmitted electric fields intensity ratio obtain the transmission system of calibration plate
Number, and then obtain the complex refractivity index of calibration plate.
S3, THz wave reflection measurement obtain calibration plate and measured material plate reflects too respectively under same incident angle
Hertz wave reflected field intensity.
S4, according to the complex refractivity index of calibration plate and the incident angle of THz wave reflection measurement, calculate calibration plate and enter at this
Reflection coefficient under firing angle degree.
S5, in conjunction with the ratio between calibration plate and measured material plate the THz wave reflected field intensity reflected and reflection coefficient
Example relationship calculates reflection coefficient of the measured material plate under the incident angle.
Preferably, in step S2 calculate calibration plate complex refractivity index when, using whether there is or not calibration plate as when sample too
Hertz wave transmitted electric fields intensity is compared, and the transmission coefficient expression formula of calibration plate is obtained are as follows:
Wherein, t1Indicate the transmission coefficient of calibration plate,Indicate the transmitted electric fields intensity measured when calibration plate,It indicates
The transmitted electric fields intensity measured when no calibration plate, ω indicate frequency, ρ1(ω) indicates the width of transmitted electric fields intensity when calibration plate
Value, ρ0(ω) indicates transmitted electric fields intensity amplitude, φ when no calibration plate1(ω) indicates the phase of transmitted electric fields intensity when calibration plate
Position, φ0(ω) indicates the phase of transmitted electric fields intensity when no calibration plate, n0Indicate that THz wave propagation is passed through when no calibration plate
Space refractive index, i.e., using in above-described embodiment when Terahertz frequency range material reflection coefficient calibration measuring device, in gas chamber
The refractive index of gas,Indicate the complex refractivity index of calibration plate；L indicates that the thickness of calibration plate, c indicate the light velocity.Utilize above-mentioned calibration
The transmission coefficient expression formula of plate can calculate the complex refractivity index for acquiring calibration plate material.
Preferably, in case of weak absorption, the complex refractivity index of calibration plate has approximate analytic solution form:
Wherein, n1(ω) indicates the complex refractivity index approximation of calibration plate, and to simplify the calculation, n can be used in when subsequent calculating1
Complex refractivity index of the value of (ω) as calibration plate.
Preferably, the incident angle of THz wave reflection measurement is obtained in step S4 with the following method:
Using the accessory plate with calibration plate difference transmissivity, THz wave transmission measurement obtains accessory plate as sample
When THz wave transmitted electric fields intensity；
The transmission coefficient of accessory plate is obtained according to the THz wave transmitted electric fields intensity ratio whether there is or not accessory plate, and then is obtained
The complex refractivity index of accessory plate；
THz wave reflection measurement obtains and the auxiliary under calibration plate and the same incident angle of measured material plate in step S3
The THz wave reflected field intensity of plate reflection；
According to the proportionate relationship between calibration plate and the accessory plate THz wave reflected field intensity reflected and reflection coefficient
And fresnel formula, calculate the incident angle of THz wave reflection measurement.
Wherein, accessory plate is different from the complex refractivity index of calibration plate, and the silicon with calibration plate difference transmissivity can be used in accessory plate
Piece or teflon plate.Accessory plate is interchangeable with calibration plate, and two pieces of different types of calibration plates actually can be used, optionally its
In one piece be used as accessory plate.The THz wave transmitted electric fields intensity that accessory plate can also be measured in step sl as a result, in step
The complex refractivity index of accessory plate is calculated in S2.
That is, the present invention also provides a kind of incident angle measurement methods of THz wave reflection measurement, comprising:
S1, THz wave transmission measurement obtain the THz wave transmission of calibration plate and accessory plate respectively as sample when
Electric field strength, and the THz wave transmitted electric fields intensity without calibration plate and when accessory plate, wherein accessory plate and calibration plate is saturating
Penetrate rate difference.
S2, according to obtain the presence or absence of sample when THz wave transmitted electric fields intensity ratio, respectively obtain calibration plate
With the transmission coefficient of accessory plate, and then the complex refractivity index of calibration plate and accessory plate is obtained.
When S3, THz wave reflection measurement obtain calibration plate and accessory plate respectively as sample, in same incidence angle
The THz wave reflected field intensity reflected respectively under degree.
S4, it is closed according to the ratio between calibration plate and the accessory plate THz wave reflected field intensity reflected and reflection coefficient
System and fresnel formula calculate the incident angle of THz wave reflection measurement.
This method obtains accurate terahertz pulse incident angle by calculating, more accurate compared with the prior art, can
It leans on, and reduces environmental change influence and artificial reading angular error.
It is further preferred that can obtain the expression formula of the reflection coefficient of calibration plate according to fresnel formula are as follows:
Wherein, r1 pAnd r1 sTerahertz pulse is respectively indicated with θ0Under two kinds of polarization states of p and s when angle incidence calibration plate
Reflection coefficient.θ0Indicate incidence angle angle, θ1Indicate calibration plate material refraction angle angle.
Similarly, the expression formula of accessory plate reflection coefficient can be obtained are as follows:
Wherein,WithTerahertz pulse is respectively indicated with θ0Under two kinds of polarization states of p and s when angle incidence accessory plate
Reflection coefficient.θ2Indicate accessory plate refraction angle angle,Indicate the complex refractivity index of accessory plate.
According to Si Nieer formula:Know that there are two for each polarization mode
Three unknown quantitys of a equation, i.e. incidence angle θ0With the reflection coefficient of calibration plate and accessory plate；But due to calibration plate and auxiliary
Reflected field intensity ratio of the plate under same incidence angle is apparent from, it may be assumed that
Wherein, r1 pAnd r1 sTerahertz pulse is respectively indicated with θ0Under two kinds of polarization states of p and s when angle incidence calibration plate
Reflection coefficient；WithThe reflected field intensity under two kinds of polarization states of p and s after respectively indicating theoretically total reflection；
WithRespectively indicate the reflected field intensity under two kinds of polarization states of p and s of the scaled plate reflection measured；WithRespectively
Indicate the reflected field intensity under the two kinds of polarization states of p and s through accessory plate reflection measured.
For for the p-polarization the case where, enableThen have:
By in above formula as it can be seen that the ratio of the THz wave reflected field intensity reflected by calibration plate and accessory plate can be quasi-
Really acquire incident angle θ when measurement0(or only acquire cos θ0), it avoids and causes to measure using conventional angle measurement unit
It is inaccurate to introduce error.The incident angle θ that will be measured0(or cos θ0) substitute into calibration plate reflection coefficient expression formula, can calculate
The reflection coefficient of calibration plate out.
Preferably, in step S5, the THz wave reflected field intensity of calibration plate and measured material plate and reflection coefficient it
Between proportionate relationship include:
The reflection coefficient of calibration plate and the THz wave reflected field strength relationships of reflection are as follows:
The reflection coefficient of measured material plate and the THz wave reflected field strength relationships of reflection are as follows:
Wherein,WithTerahertz pulse is respectively indicated with θ0Two kinds of polarization shapes of p and s when angle incidence measured material plate
Reflection coefficient under state；WithIt respectively indicates anti-under two kinds of polarization states of the p reflected through measured material plate measured and s
Radio field intensity.
And then obtain the relational expression of the reflection coefficient of calibration plate and the reflection coefficient of measured material plate are as follows:
Therefore, electricity is reflected according to the THz wave measured under calibration plate and the same incident angle of measured material plate in step S3
The reflection coefficient for the calibration plate that field intensity and step S4 are acquired can acquire reflection coefficient and the reflection of measured material plate
Rate.Since energy is directly proportional to the quadratic power of electric field strength, so reflectivity is square of reflection coefficient.
Preferably, which calibrates measurement method further include:
S6, change THz wave incident angle, repeat step S3 to S5, calculate the anti-of measured material plate under the incident angle
Penetrate coefficient.Terahertz pulse incident angle is adjusted, can quickly and easily realize that THz wave is entered with different angle between 0~90 °
The measurement of reflection coefficient in the case of penetrating.
It preferably,, can be under new angle using provided by the invention accurately to obtain new incident angle when changing angle
Method obtains the incident angle of THz wave reflection measurement, the i.e. reeflectance ratio of duplicate measurements calibration plate and accessory plate.Pass through
Reflection measurement module first measures the reflected intensity of calibration plate under certain incident angle, then replaces calibration plate, measures same incidence angle
The reflected intensity of lower accessory plate is spent, then measured material plate is replaced into accessory plate, measures the measured material plate under same incident angle
Reflected field intensity, by measurement result according to above-mentioned formula carry out electric field strength comparison, solve, finally obtain the incidence angle
Spend the THz wave reflection coefficient of the lower plate of material.Certainly, calibration plate, the measuring sequence of accessory plate and measured material plate in practice
It is not important.
To sum up, Terahertz frequency range material reflection coefficient provided by the invention calibrates measurement method, using calibration plate to tested
The reflection coefficient of plate of material measures, and obtains the incidence angle of accurate THz wave reflection measurement in measurement process by calculating
Degree, more accurate compared to by existing apparatus measures angle, calculated result is relatively reliable.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (9)
1. a kind of Terahertz frequency range material reflection coefficient calibrates measuring device characterized by comprising calibration plate, transmission measurement
Module, reflection measurement module and computing module；
The transmission measurement module is used to pass through the acquisition of THz wave transmission measurement, and whether there is or not the transmissions of the THz wave of the calibration plate
Electric field strength；The reflection measurement module is used to obtain the calibration plate by THz wave reflection measurement and measured material plate exists
The THz wave reflected field intensity reflected under same incident angle；The computing module is used for according to whether there is or not the calibration plates
THz wave transmitted electric fields intensity obtains the complex refractivity index of the calibration plate, and reflects in conjunction with the calibration plate and measured material plate
THz wave reflected field intensity ratio and incident angle, resolve reflection system of the measured material plate under the incident angle
Several and reflectivity.
2. Terahertz frequency range material reflection coefficient according to claim 1 calibrates measuring device, it is characterised in that: described anti-
Penetrating measurement module includes gas chamber, substrate, THz wave transmitting module, THz wave receiving module and sample holder；
The substrate is set in the gas chamber, and the substrate is equipped with arcuate guide tracks；The sample holder is set to the arch and leads
The center point of rail, for placing sample；The THz wave transmitting module and the THz wave receiving module lead to respectively
A straight rail is crossed set on the arcuate guide tracks, the center point of the arcuate guide tracks, one end are fixed in two described equal one end of straight rail
It can move across the arcuate guide tracks and along the tangential of the arcuate guide tracks arc, for driving the THz wave transmitting module
It moves in a circle with the THz wave receiving module around the sample holder.
3. Terahertz frequency range material reflection coefficient according to claim 1 calibrates measuring device, it is characterised in that: described
Penetrate measurement module include THz wave transmitting antenna, first to fourth paraboloidal mirror, silicon wafer, electro-optic crystal, quarter-wave plate,
Condenser lens, wollaston prism and difference photodetector；
The THz wave transmitting antenna is for receiving pumping laser and exciting generation terahertz pulse；First paraboloidal mirror
For receiving terahertz pulse and collimating, the second paraboloidal mirror is for focusing the terahertz pulse of collimation to form placement detected sample
The focus measurement point of product；For will be collimated again by the terahertz pulse after focus measurement point, the 4th throws third paraboloidal mirror
Object plane mirror is used to converge the terahertz pulse collimated again；The silicon wafer will be detected for reflecting external detection light beam
Light beam converges at electro-optic crystal with the terahertz pulse for passing through the silicon wafer, the laser after forming Terahertz Electric Field Modulated；It is described
Quarter-wave plate is used for the phase difference to ordinary light and non-ordinary light introducing pi/2 in modulated laser, the condenser lens
Laser for that will introduce phase difference converges, and the wollaston prism is used to make the laser beam splitter of convergence and converges at institute respectively
Difference photodetector is stated, the difference photodetector is used to carry out differential ference spiral spy to the terahertz signal of sample
It surveys.
4. Terahertz frequency range material reflection coefficient according to claim 1 calibrates measuring device, it is characterised in that: described fixed
Target is high resistant silicon wafer or teflon plate.
5. a kind of Terahertz frequency range material reflection coefficient calibrates measurement method, which comprises the following steps:
The THz wave transmitted electric fields that S1, THz wave transmission measurement are obtained respectively when whether there is or not calibration plates as sample are strong
Degree；
S2, according to obtain the presence or absence of calibration plate when THz wave transmitted electric fields intensity ratio obtain the transmission coefficient of calibration plate,
And then obtain the complex refractivity index of calibration plate；
S3, the Terahertz that THz wave reflection measurement obtains calibration plate and measured material plate reflects respectively under same incident angle
Wave reflection electric field strength；
S4, according to the complex refractivity index of calibration plate and the incident angle of THz wave reflection measurement, calculate calibration plate in the incidence angle
Reflection coefficient under degree；
S5, it is closed in conjunction with the ratio between calibration plate and the measured material plate THz wave reflected field intensity reflected and reflection coefficient
System calculates reflection coefficient of the measured material plate under the incident angle.
6. Terahertz frequency range material reflection coefficient according to claim 5 calibrates measurement method, it is characterised in that:
It is saturating as THz wave when sample using whether there is or not calibration plates when calculating the complex refractivity index of calibration plate in the step S2
Radio field intensity is compared, and the transmission coefficient expression formula of calibration plate is obtained are as follows:
Wherein, t1Indicate the transmission coefficient of the calibration plate,Indicate the transmitted electric fields intensity measured when the calibration plate,
The transmitted electric fields intensity measured when indicating without the calibration plate, ω indicate frequency, ρ1(ω) indicates transmitted electric fields when calibration plate
The amplitude of intensity, ρ0(ω) indicates transmitted electric fields intensity amplitude, φ when no calibration plate1(ω) indicates transmitted electric fields when calibration plate
The phase of intensity, φ0(ω) indicates the phase of transmitted electric fields intensity when no calibration plate, n0Indicate that THz wave passes when no calibration plate
The refractive index in passed through space is broadcast,Indicate the complex refractivity index of calibration plate；L indicates that the thickness of the calibration plate, c indicate light
Speed；The complex refractivity index of calibration plate is calculated using the transmission coefficient expression formula of calibration plate.
7. Terahertz frequency range material reflection coefficient according to claim 5 calibrates measurement method, which is characterized in that the step
The incident angle of THz wave reflection measurement is obtained in rapid S4 with the following method:
Using the accessory plate with calibration plate difference transmissivity, when THz wave transmission measurement obtains accessory plate as sample
THz wave transmitted electric fields intensity；
The transmission coefficient of accessory plate is obtained according to the THz wave transmitted electric fields intensity ratio whether there is or not accessory plate, and then is assisted
The complex refractivity index of plate；
THz wave reflection measurement obtains anti-with the accessory plate under calibration plate in step S3 and the same incident angle of measured material plate
The THz wave reflected field intensity penetrated；
Proportionate relationship between the THz wave reflected field intensity reflected according to calibration plate and accessory plate and reflection coefficient and
Fresnel formula calculates the incident angle of THz wave reflection measurement.
8. Terahertz frequency range material reflection coefficient according to claim 5 calibrates measurement method, which is characterized in that the step
Proportionate relationship packet in rapid S5, between calibration plate and the THz wave reflected field intensity and reflection coefficient of the reflection of measured material plate
It includes:
The reflection coefficient of the calibration plate and the THz wave reflected field strength relationships of reflection are as follows:
Wherein, r1 pAnd r1 sTerahertz pulse is respectively indicated with θ0Under two kinds of polarization states of p and s when the angle incidence calibration plate
Reflection coefficient；WithThe reflected field intensity under two kinds of polarization states of p and s after respectively indicating theoretically total reflection；
WithRespectively indicate the reflected field intensity under two kinds of polarization states of the p reflected through the calibration plate measured and s；
The reflection coefficient of measured material plate and the THz wave reflected field strength relationships of reflection are as follows:
Wherein,WithTerahertz pulse is respectively indicated with θ0Under two kinds of polarization states of p and s when angle incidence measured material plate
Reflection coefficient；WithRespectively indicate the reflection electricity under two kinds of polarization states of the p reflected through measured material plate measured and s
Field intensity；
And then obtain the relational expression of the reflection coefficient of calibration plate and the reflection coefficient of measured material plate are as follows:
9. calibrating measurement method according to the described in any item Terahertz frequency range material reflection coefficients of claim 5 to 7, feature exists
In, further includes:
S6, change THz wave incident angle, repeating said steps S3 to S5 calculates the anti-of measured material plate under the incident angle
Penetrate coefficient.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110823110A (en) * | 2019-11-13 | 2020-02-21 | 华太极光光电技术有限公司 | Method, system and equipment for determining electric parameters of reflecting material medium |
| CN111536885A (en) * | 2020-06-02 | 2020-08-14 | 莱仪特太赫兹(天津)科技有限公司 | Double-incidence-angle type terahertz time-domain spectral coating measuring method |
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| CN113340843A (en) * | 2021-05-31 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Nondestructive detection method and detection system based on terahertz time-domain spectrum |
| CN115728242A (en) * | 2022-11-24 | 2023-03-03 | 北京环境特性研究所 | Method for measuring influence of terahertz full-band plasma cladding on material reflectivity |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419157A (en) * | 2008-09-05 | 2009-04-29 | 中国计量学院 | Accurate measurement method for for optical parameter of edible oil by terahertz time-domain spectrum |
| CN104964932A (en) * | 2015-06-18 | 2015-10-07 | 东莞理工学院 | Terahertz vertical transmission spectrum and reflectance spectrum measuring integral system and application thereof |
| CN105699317A (en) * | 2016-01-21 | 2016-06-22 | 电子科技大学 | Terahertz time-domain spectrograph capable of entering at fixed angle and simultaneously detecting transmission and reflection |
| CN106841113A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method and apparatus of Terahertz frequency range synchro measure material wave transparent reflection characteristic |
| CN106841095A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method of use terahertz pulse measurement material parameter and material thickness |
| CN107727234A (en) * | 2017-09-27 | 2018-02-23 | 上海理工大学 | The instable devices and methods therefor of quick detection backward wave tube Terahertz output frequency |
| CN108593591A (en) * | 2018-04-26 | 2018-09-28 | 中国工程物理研究院计量测试中心 | A kind of spectrum transflection of terahertz time-domain spectroscopy system compares scaling method |
-
2018
- 2018-10-19 CN CN201811219793.0A patent/CN109211842B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419157A (en) * | 2008-09-05 | 2009-04-29 | 中国计量学院 | Accurate measurement method for for optical parameter of edible oil by terahertz time-domain spectrum |
| CN104964932A (en) * | 2015-06-18 | 2015-10-07 | 东莞理工学院 | Terahertz vertical transmission spectrum and reflectance spectrum measuring integral system and application thereof |
| CN105699317A (en) * | 2016-01-21 | 2016-06-22 | 电子科技大学 | Terahertz time-domain spectrograph capable of entering at fixed angle and simultaneously detecting transmission and reflection |
| CN106841113A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method and apparatus of Terahertz frequency range synchro measure material wave transparent reflection characteristic |
| CN106841095A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method of use terahertz pulse measurement material parameter and material thickness |
| CN107727234A (en) * | 2017-09-27 | 2018-02-23 | 上海理工大学 | The instable devices and methods therefor of quick detection backward wave tube Terahertz output frequency |
| CN108593591A (en) * | 2018-04-26 | 2018-09-28 | 中国工程物理研究院计量测试中心 | A kind of spectrum transflection of terahertz time-domain spectroscopy system compares scaling method |
Non-Patent Citations (3)
| Title |
|---|
| MOHAMMAD NESHAT、N.P.ARMITAGE: ""Terahertz time-domain spectroscopic ellipsometry: instrumentation and calibration"", 《OPTICS EXPRESS》 * |
| SHUTING FAN ET AL.: ""Calibration method to improve the accuracy of THz imaging and spectroscopy in reflection geometry"", 《PHOTONICS RESEARCH》 * |
| 牟媛 等: ""基于Kramers-Kronig关系建立金属太赫兹色散模型"", 《物理学报》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110823110A (en) * | 2019-11-13 | 2020-02-21 | 华太极光光电技术有限公司 | Method, system and equipment for determining electric parameters of reflecting material medium |
| CN111536885A (en) * | 2020-06-02 | 2020-08-14 | 莱仪特太赫兹(天津)科技有限公司 | Double-incidence-angle type terahertz time-domain spectral coating measuring method |
| CN111536885B (en) * | 2020-06-02 | 2022-02-25 | 莱仪特太赫兹(天津)科技有限公司 | Double-incidence-angle type terahertz time-domain spectral coating measuring method |
| CN112816793A (en) * | 2021-01-04 | 2021-05-18 | 西安电子科技大学 | Method and system for measuring electromagnetic scattering coefficient of foil strip cloud and application |
| CN112816793B (en) * | 2021-01-04 | 2021-11-30 | 西安电子科技大学 | Method and system for measuring electromagnetic scattering coefficient of foil strip cloud and application |
| CN113049611A (en) * | 2021-03-30 | 2021-06-29 | 北京环境特性研究所 | Method for testing attenuation performance of traveling wave inhibiting material under high temperature condition |
| CN113340843A (en) * | 2021-05-31 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Nondestructive detection method and detection system based on terahertz time-domain spectrum |
| CN115728242A (en) * | 2022-11-24 | 2023-03-03 | 北京环境特性研究所 | Method for measuring influence of terahertz full-band plasma cladding on material reflectivity |
| CN115728242B (en) * | 2022-11-24 | 2024-04-19 | 北京环境特性研究所 | Method for measuring influence of terahertz full-band plasma cladding on reflectivity of material |
| CN116776584A (en) * | 2023-06-15 | 2023-09-19 | 西安电子科技大学 | Method for analyzing electrical performance of meshed parabolic antenna by considering wire mesh |
| CN116776584B (en) * | 2023-06-15 | 2024-01-26 | 西安电子科技大学 | Method for analyzing electrical performance of meshed parabolic antenna by considering wire mesh |
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