CN109193167B - Miniaturized frequency selective surface with low ratio of high resonance point to low resonance point - Google Patents
Miniaturized frequency selective surface with low ratio of high resonance point to low resonance point Download PDFInfo
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- CN109193167B CN109193167B CN201811034563.7A CN201811034563A CN109193167B CN 109193167 B CN109193167 B CN 109193167B CN 201811034563 A CN201811034563 A CN 201811034563A CN 109193167 B CN109193167 B CN 109193167B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
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Abstract
The invention provides a frequency selection surface with a low frequency ratio miniaturization, which mainly solves the technical problems of long distance between two resonance frequency points of a low frequency band and large unit electrical size of the existing dual-band frequency selection surface. The medium plate comprises a medium plate (2), metal patches (1) printed on the upper surface of the medium plate and metal patches (3) printed on the lower surface of the medium plate, metal through holes (4) and metal connecting lines (5) connected with adjacent units, wherein each metal patch consists of four metal strips arranged on the surface of the medium plate, the first two metal strips form two resonance points of TE polarization, the second two metal strips form two resonance points of TM polarization, and the four metal strips of the same polarization of the upper metal patch and the lower metal patch are connected through the metal through holes so as to prolong a current path. The invention has the characteristics of low frequency ratio, good miniaturization effect and stable performance for different polarization and angles, and can be applied to an antenna subreflector of a communication system and small-sized communication equipment.
Description
Technical Field
The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a miniaturized frequency selection surface with a low ratio of a high resonance point to a low resonance point, which can be used for an antenna subreflector of a communication system and small communication equipment.
Background
The frequency selective surface is a two-dimensional periodic array structure composed of a large number of passive resonant cells, essentially exhibiting a spatial filter, exhibiting a total reflection or total transmission characteristic, called frequency selective characteristic, in interaction with electromagnetic waves in the vicinity of the resonant frequency of the cell. Frequency selective surfaces are generally divided into two broad categories, one is a metal patch, the other is a complementary slot structure, usually the patch type frequency selective surface has a band-stop filtering characteristic, while the slot type frequency selective surface has a band-pass filtering characteristic, the frequency selective surface itself does not absorb energy, and its response characteristic varies with frequency. Due to this property caused by the special structure, the frequency selective surface is widely applied in various aspects, such as: the antenna comprises an antenna housing, an antenna auxiliary reflecting surface, a wave absorbing material, a polarizer and the like.
With the rapid development of modern wireless communication and electronic devices, the spectrum resources become very tight, and therefore, the frequency selection surface of dual or multiple bands is coming. The antenna has two or more working frequency bands, so that the antenna can be used for designing an antenna auxiliary reflecting surface of a communication system, and the aim of multi-frequency multiplexing of the antenna is fulfilled by reflecting or transmitting electromagnetic waves with different frequencies emitted from a feed source, so that the service efficiency of the antenna is improved, the problem of frequency spectrum resource shortage is solved, and meanwhile, the anti-interference capability of communication equipment is improved. In addition, the conventional frequency selective surface cannot contain a sufficient number of passive resonant units due to the limited space when an ideal infinite planar effect is to be achieved due to the large spot size of the resonant units, and the large electric size causes a large phase difference between adjacent units when electromagnetic waves are obliquely incident. The angular stability of the frequency selective surface is deteriorated. Miniaturization can effectively solve the problems, the resonant frequency of the unit is far away from grating lobes and the medium surface waves, and the frequency response effect is improved. The dual-frequency miniaturized frequency selective surface can be widely applied to small-sized communication equipment, and the application range of the frequency selective surface is effectively widened.
Dual-band frequency selective surfaces are often required to operate in two closely spaced frequency bands, and are often referred to as low-ratio frequency selective surfaces, where the ratio of a high resonance point to a low resonance point is referred to as the frequency ratio. The low frequency ratio is easier to realize in the high frequency band, but for the low frequency band, it is difficult to ensure that the low frequency ratio is realized and the miniaturization degree is high at the same time on the premise of ensuring the stability of the large-angle incidence. A paper entitled "an regulated Stable Dual-Band FSS With Closely Spaced communications Unit" published in 2017, volume 27, phase 3 of the periodical of IEEEMicrowave and Wireless companies Letters, discloses a Dual-Band frequency selective surface formed by printing a meander-shaped metal strip on the upper surface of a dielectric plate to form a resonant Cell structure With a frequency ratio of 1.29. However, the miniaturization of such a structure is only 0.065 resonance wavelength, and the characteristics of both the low frequency ratio and the high miniaturization are not realized.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned disadvantages of the prior art, and to provide a miniaturized frequency selective surface having a low ratio of a high resonance point to a low resonance point, so that the dual-band frequency selective surface can simultaneously realize a high low frequency ratio and a high degree of miniaturization.
To achieve the above object, the miniaturized frequency selective surface of the present invention having a low value of the ratio of a high resonance point to a low resonance point comprises M × N frequency selective surface units arranged periodically, M ≧ 5, N ≧ 5, characterized in that: each frequency selection surface unit comprises a dielectric plate, an upper metal patch, a lower metal patch, a metal through hole and a metal connecting line for connecting adjacent units;
the upper metal patch and the lower metal patch are respectively printed on the upper surface and the lower surface of the dielectric plate, and each metal patch consists of four metal strips arranged on the surface of the dielectric plate;
the upper metal patch is formed by arranging a first upper metal strip, a second upper metal strip, a third upper metal strip and a fourth upper metal strip on the upper surface of the dielectric slab, and the first upper metal strip and the second upper metal strip are nested with each other to form an upper right triangular area of the unit structure; the third upper metal strip and the fourth upper metal strip are mutually nested to form a left lower triangular area of the unit structure, and the right upper triangular area and the left lower triangular area are symmetrically arranged relative to an oblique diagonal line of the resonance unit;
the lower metal patch is formed by arranging a first lower metal strip, a second lower metal strip, a third lower metal strip and a fourth lower metal strip on the lower surface of the dielectric slab, and the arrangement mode of the metal strips is the same as that of the upper metal patch;
the metal through holes for connecting the upper metal patch and the lower metal patch are two, namely two TE polarized resonance frequency points are formed by the four metal strips in the upper right triangular area of the first metal through hole connecting unit, and two TM polarized resonance frequency points are formed by the four metal strips in the lower left triangular area of the second metal through hole connecting unit.
Preferably, the arrangement of the metal strips is as follows:
the first upper metal strips of the upper metal patches take the upper right vertex of the upper surface of the unit as a starting point, the first lower metal strips of the lower metal patches take the upper right vertex of the lower surface of the unit as a starting point, zigzag arrangement is carried out in the upper right triangular area of the upper surface of the unit, and the two metal strips are connected through a first metal through hole to form a low resonance frequency point under TE polarization;
the second upper metal strips of the upper metal patches take the upper left vertex of the upper surface of the unit as a starting point, the second lower metal strips of the lower metal patches take the upper left vertex of the lower surface of the unit as a starting point, zigzag arrangement is carried out in the upper right triangular area of the upper surface of the unit, and the two metal strips are connected through a first metal through hole to form a high resonance frequency point under TE polarization;
the total length of the first upper metal strip and the first lower metal strip is L1, the total length of the second upper metal strip and the second lower metal strip is L2, and the values of L1 and L2 are similar but not equal, so that two high-low resonance frequency points with similar distances under TE polarization are formed, and the ratio of the high resonance point to the low resonance point is low;
the unit left lower triangular region metal strip and the unit right upper triangular region metal strip are symmetrically distributed about an oblique diagonal of the unit, the length of the unit left lower triangular region metal strip is completely the same as that of the unit right upper triangular region metal strip, the third upper metal strip and the third lower metal strip as well as the fourth upper metal strip and the fourth lower metal strip are connected through the second metal through holes, and therefore two high-low resonance frequency points with similar distances under TM polarization are formed.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts a three-dimensional structure, is not limited to arranging strips only in a single layer, realizes the extension of the current path, namely, the metal through holes are used for connecting the metal bent strips with the same upper surface and lower surface of the medium 2, so that the double extension of the original current path is realized; meanwhile, as the bent metal strips which are mutually nested are adopted, the equivalent capacitance of the unit is increased, and the current path is also prolonged, so that the effective inductance of the unit is increased, the resonant frequency of the frequency selection surface is reduced, the size of the unit is reduced, and the miniaturization degree of the frequency selection surface unit in a low frequency band is improved.
2. The two resonant frequency points of the frequency selection surface are respectively formed by adopting the same zigzag strip structure, namely, a first upper metal strip and a first lower metal strip which are connected by a first metal through hole form a low frequency point integrally, a second upper metal strip and a second lower metal strip which are connected by a second metal through hole form a high frequency point integrally, and the total lengths of the two pairs of metal strips are close, so that the distances of the two resonant frequency points are close, and the low frequency ratio of the frequency selection surface is realized.
3. The invention adopts the metal strips distributed in the upper right triangular area of the unit to control the polarization in one direction, and the metal strips distributed in the lower left triangular area of the unit to control the polarization in the other direction, thereby obtaining the dual-polarized frequency selection surface.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural diagram of a passive resonant unit according to the present invention;
FIG. 3 is a labeled diagram of the structure of a passive resonant unit according to the present invention;
FIG. 4 is a schematic diagram of the arrangement of TE polarized metal strips of the upper metal patch in the present invention;
FIG. 5 is a graph of reflection coefficients of TE and TM polarizations respectively under 0-60 ° incident angle illumination in example 1 of the present invention;
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments.
Referring to fig. 1, the low frequency ratio miniaturized frequency selective surface of the present invention includes M × N frequency selective surface units arranged periodically, where M is 10 and N is 10 in this example, and the structure of each frequency selective surface unit is shown in fig. 2.
Referring to fig. 2, the frequency selective surface unit includes a dielectric plate 2, an upper metal patch 1, a lower metal patch 3, a metal via 4, and a metal connection line 5 connecting adjacent units; the upper metal patch 1 and the lower metal patch 3 are respectively printed on the upper surface and the lower surface of the dielectric plate 2, and each metal patch consists of four metal strips distributed on the surface of the dielectric plate 2; the dielectric plate 2 is a square plate with a side length p of 6mm to 9mm, a height h of 0.17mm to 3.5mm and a dielectric constant of 2.2 to 4.4, and the example is not limited to p of 8.2mm, h of 0.17mm and 4.4.
Referring to fig. 3 and 4, the upper metal patch 1 is formed by arranging a first upper metal strip 11, a second upper metal strip 12, a third upper metal strip 13 and a fourth upper metal strip 14 on the upper surface of the dielectric slab 2; the lower metal patch 3 is formed by arranging a first lower metal strip 31, a second lower metal strip 32, a third lower metal strip 33 and a fourth lower metal strip 34 on the lower surface of the dielectric slab 2; the number of the metal through holes 4 is two, namely a first metal through hole 41 and a second metal through hole 42; the arrangement mode of the metal strips is as follows:
the first upper metal strip 11 of the upper metal patch 1 takes the top right vertex of the upper surface of the unit as a starting point, the second upper metal strip 12 takes the top left vertex of the upper surface of the unit as a starting point, the two metal strips 11 and 12 are mutually zigzag-nested, and zigzag arrangement is carried out in the upper right triangular area of the upper surface of the unit to form an upper right triangular area of the upper surface structure of the unit; the third upper metal strip 13 takes the left lower vertex of the upper surface of the unit as a starting point, the fourth upper metal strip 14 takes the left upper vertex of the upper surface of the unit as a starting point, the two metal strips 13 and 14 are mutually zigzag-nested, and zigzag arrangement is carried out in the left lower triangular area of the upper surface of the unit to form the left lower triangular area of the upper surface structure of the unit; the upper right triangular area and the lower left triangular area are symmetrically arranged about the diagonal line of the resonance unit, and the structure of mutual zigzag nesting not only increases the equivalent capacitance of the unit, but also increases the equivalent inductance of the unit, and improves the miniaturization degree.
The arrangement mode of the metal strips of the lower metal patch 3 is the same as that of the metal patch 1, namely, the first lower metal strip 31 takes the upper right vertex of the lower surface of the unit as a starting point, the second lower metal strip 32 takes the upper left vertex of the lower surface of the unit as a starting point, the two metal strips 31 and 32 are mutually zigzag-nested, and zigzag arrangement is carried out in the upper right triangular area of the lower surface of the unit to form an upper right triangular area of the lower surface structure of the unit; the third lower metal strip 33 takes the left lower vertex of the lower surface of the unit as a starting point, the fourth lower metal strip 34 takes the left upper vertex of the lower surface of the unit as a starting point, the two metal strips 33 and 34 are mutually zigzag-nested, and zigzag arrangement is carried out in the left lower triangular area of the lower surface of the unit to form the left lower triangular area of the lower surface structure of the unit.
In the upper right triangular area of the upper surface and the lower surface of the unit, the first upper metal strip 11 and the first lower metal strip 31 are connected through the first metal through hole 41 to form a low resonance frequency point under TE polarization; the second upper metal strip 12 and the second lower metal strip 32 are connected through the first metal through hole 41 to form a high resonance frequency point under TE polarization; the total length of the first upper metal strip 11 and the first lower metal strip 31 is L1, the total length of the second upper metal strip 12 and the second lower metal strip 32 is L2, and the L1 and the L2 have similar but unequal values, so as to form two high and low resonance frequency points with similar distances under TE polarization, and realize a low frequency ratio; since the metal strips are spread over the entire upper and lower surfaces of the dielectric sheet, when the size of the dielectric sheet is increased or decreased, the length of all the metal strips will be increased or decreased as the dielectric sheet is changed.
In the left lower triangular area of the upper surface and the lower surface of the unit, the third upper metal strip 13 and the third lower metal strip 33 are connected through the second metal through hole 42 to form a low resonance frequency point under TM polarization; the fourth upper metal strip 14 and the fourth lower metal strip 34 are connected through the second metal through hole 42 to form a high resonance frequency point under TM polarization; the total length of the third upper metal strip 13 and the third lower metal strip 33 is L3, the total length of the fourth upper metal strip 14 and the fourth lower metal strip 34 is L4, and the values of L3 and L4 are similar but not equal to each other, so as to form two high and low resonance frequency points with similar distances under TM polarization; the metal bent strips on the upper surface and the lower surface of the unit are connected by the metal through holes, so that a current path is prolonged, the equivalent inductance of the unit is increased, and the miniaturization degree is improved.
The metal connecting lines 5 connecting the adjacent units are set to be six and grouped according to the polarization mode, namely three connecting lines 51, 52 and 53 in TE polarization are divided into a first group, and three connecting lines 54, 55 and 56 in TM polarization are divided into a second group; the first connection line 51 connects the unit and the left adjacent unit, the second connection line 52 connects the unit and the right adjacent unit, the third connection line 53 connects the first lower metal strip 31 and the second lower metal strip 32 of the lower metal patch, the fourth connection line 54 connects the third upper metal strip 13 and the fourth upper metal strip 14 of the upper metal patch, the fifth connection line 55 connects the unit and the lower adjacent unit, and the sixth connection line 56 connects the unit and the upper adjacent unit.
The width w1 of all the metal strips 11, 12, 13, 14, 31, 32, 33, 34 is 0.1mm to 0.5mm, the diameter d of the two metal through holes 41, 42 is 0.2mm to 0.4mm, the example is not limited to w1 being 0.2mm, d being 0.2mm, and the width w2 of all the connecting lines is the same as the width w1 of the metal strips.
The technical effects of the invention are further explained by combining simulation tests as follows:
1. simulation conditions and contents:
the reflection coefficients of the present embodiment under the irradiation of TE and TM polarized waves within the angle range of 0 to 60 ° are simulated and calculated by using commercial simulation software HFSS _17.0, and the result is shown in fig. 5, in which:
FIG. 5(a) is a reflection coefficient diagram of the present embodiment under TE polarized wave irradiation in the angular region of 0 to 60 ℃,
FIG. 5(b) is a reflection coefficient diagram of the present embodiment under irradiation of TM polarized wave in the angle range of 0 to 60 deg.
2. And (3) simulation result analysis:
as can be seen from fig. 5(a), in the case of TE polarized wave irradiation, the two resonance frequency points of the frequency selective surface in the present embodiment under irradiation at an incident angle of 0 ° are f 1-1.42 GHz and f 2-1.75 GHz; the frequency deviation of the frequency selection surface is not more than 0.2GHz within the range of the incidence angle of 0-60 degrees, and the insertion loss is less than-1 dB.
As can be seen from fig. 5(b), in the case of TM polarized wave irradiation, the two resonance frequency points of the frequency selective surface in the present embodiment under irradiation at an incident angle of 0 ° are f 3-1.42 GHz and f 4-1.75 GHz; the frequency deviation of the frequency selection surface within the incidence angle range of 0-60 degrees is not more than 0.3GHz, the insertion loss is less than-1 dB, and the transmission performance is basically consistent with that shown in figure 5 (a).
The simulation results show that the frequency ratio of the dual-band frequency selective surface in the low frequency band is f2/f1 equal to 1.23, and the characteristic of low frequency ratio is realized; frequency points basically have no deviation within the range of incidence angles of 0-60 degrees, and the angle stability is good; when the dielectric constant of the dielectric plate is 2.2, the electric size of the resonance unit is 0.038 resonance wavelengths, and the resonance unit has a good miniaturization effect; meanwhile, for different polarization modes, the method can keep stable performance and has good polarization stability.
The foregoing description is only an example of the present invention and does not constitute any limitation to the present invention, and it will be apparent to those skilled in the art that various modifications and variations in form and detail may be made without departing from the principle of the present invention after understanding the content and principle of the present invention, but these modifications and variations are within the scope of the claims of the present invention.
Claims (6)
1. A miniaturized frequency selective surface with a low value of the ratio of high resonance points to low resonance points, comprising M x N periodically arranged frequency selective surface elements, M being equal to or greater than 5, N being equal to or greater than 5, characterized in that: each frequency selection surface unit comprises a dielectric plate (2), an upper metal patch (1), a lower metal patch (3), a metal through hole (4) and a metal connecting line (5) for connecting adjacent units;
the upper metal patch (1) and the lower metal patch (3) are respectively printed on the upper surface and the lower surface of the dielectric plate (2), and each metal patch is composed of four metal strips distributed on the surface of the dielectric plate (2);
the upper metal patch (1) is formed by arranging a first upper metal strip (11), a second upper metal strip (12), a third upper metal strip (13) and a fourth upper metal strip (14) on the upper surface of a dielectric slab (2), the dielectric slab is rectangular, and the first upper metal strip (11) and the second upper metal strip (12) are nested with each other to form an upper right triangular area of the upper surface of the unit; the third upper metal strip (13) and the fourth upper metal strip (14) are mutually nested to form a left lower triangular area on the upper surface of the unit, and the right upper triangular area and the left lower triangular area are symmetrically arranged relative to an oblique diagonal line of the resonance unit;
the lower metal patch (3) is formed by arranging a first lower metal strip (31), a second lower metal strip (32), a third lower metal strip (33) and a fourth lower metal strip (34) on the lower surface of the dielectric slab (2), the arrangement mode of the metal strips is the same as that of the metal patch (1), namely the first lower metal strip (31) takes the upper right vertex of the lower surface of the unit as a starting point, the second lower metal strip (32) takes the upper left vertex of the lower surface of the unit as a starting point, the two metal strips (31) and (32) are mutually zigzag-nested, and zigzag arrangement is carried out in the upper right triangular area of the lower surface of the unit to form an upper right triangular area of the lower surface structure of the unit; the third lower metal strip (33) takes the left lower vertex of the lower surface of the unit as a starting point, the fourth lower metal strip (34) takes the left upper vertex of the lower surface of the unit as a starting point, the two metal strips (33) and (34) are mutually zigzag-nested, and zigzag arrangement is carried out in the left lower triangular area of the lower surface of the unit to form a left lower triangular area of the lower surface structure of the unit;
the metal through holes (4) for connecting the upper metal patch and the lower metal patch are two, namely four metal strips (11, 12, 31 and 32) in the upper right triangular area of the unit are connected through the first metal through holes (41) to form two resonance frequency points of TE polarization, and four metal strips (13, 14, 33 and 34) in the lower left triangular area of the unit are connected through the second metal through holes (42) to form two resonance frequency points of TM polarization.
2. A miniaturized frequency selective surface according to claim 1 having a low value of the ratio of high resonance point to low resonance point, characterized in that: the specific arrangement mode of the metal strips is as follows:
the first upper metal strips (11) of the upper metal patches are arranged in a zigzag manner in the upper right triangular area of the unit by taking the upper right vertex of the upper surface of the unit as a starting point, and the first lower metal strips (31) of the lower metal patches are arranged in a zigzag manner by taking the upper right vertex of the lower surface of the unit as a starting point, and the two metal strips are connected through first metal through holes (41) to form a low resonance frequency point under TE polarization;
the second upper metal strips (12) of the upper metal patches are arranged in a zigzag manner in the upper right triangular area of the unit by taking the upper left vertex of the upper surface of the unit as a starting point, and the second lower metal strips (32) of the lower metal patches are arranged in a zigzag manner by taking the upper left vertex of the lower surface of the unit as a starting point, and the two metal strips are connected through first metal through holes (41) to form a high resonance frequency point under TE polarization;
the total length of the first upper metal strip (11) and the first lower metal strip (31) is L1, the total length of the second upper metal strip (12) and the second lower metal strip (32) is L2, and the values of L1 and L2 are not equal; the total length of the third upper metal strip (13) and the third lower metal strip (33) is L3, the total length of the fourth upper metal strip (14) and the fourth lower metal strip (34) is L4, and the values of L3 and L4 are not equal; forming high and low resonance frequency points under TE polarization, and realizing that the ratio of the high resonance point to the low resonance point is a low value;
the unit left lower triangular area metal strips (13, 33, 14, 34) and the unit right upper triangular area metal strips (11,31,12,32) are symmetrically distributed about the diagonal line of the unit, the length of the unit left lower triangular area metal strips is identical to that of the unit right upper triangular area metal strips (11,31,12,32), and the third upper metal strips and the third lower metal strips (13, 33), and the fourth upper metal strips and the fourth lower metal strips (14, 34) are connected through second metal through holes (42) to form high and low resonance frequency points under TM polarization.
3. A miniaturized frequency selective surface according to claim 1 having a low value of the ratio of high resonance point to low resonance point, characterized in that:
the widths w1 of all the metal strips (11, 12, 13, 14, 31, 32, 33, 34) are 0.1 mm-0.5 mm;
the diameters d of the two metal through holes (41) and (42) are both 0.2 mm-0.4 mm.
4. A miniaturized frequency selective surface according to claim 1 having a low value of the ratio of high resonance point to low resonance point, characterized in that:
the metal connecting lines (5) for connecting the adjacent cells are set to be six, namely a first connecting line (51), a second connecting line (52), a third connecting line (53), a fourth connecting line (54), a fifth connecting line (55) and a sixth connecting line (56), and are grouped according to polarization modes, namely three connecting lines (51, 52 and 53) under TE polarization are divided into a first group, and three connecting lines (54, 55 and 56) under TM polarization are divided into a second group.
5. A miniaturized frequency selective surface according to claim 4 having a low value of the ratio of high resonance point to low resonance point, characterized in that:
the first connecting line (51) connects the unit and the left adjacent unit;
the second connecting line (52) connects the unit and the right adjacent unit;
the third connecting line (53) is connected with the first lower metal strip (31) and the second lower metal strip (32) of the lower metal patch;
the fourth connecting line (54) is connected with a third upper metal strip (13) and a fourth upper metal strip (14) of the upper metal patch;
the fifth connecting line (55) is connected with the unit and the lower adjacent unit;
the sixth connecting line (56) is connected with the unit and the upper adjacent unit;
the width w2 of all connecting lines is the same as the width w1 of the metal strip.
6. A miniaturized frequency selective surface according to claim 1 having a low value of the ratio of high resonance point to low resonance point, characterized in that: the dielectric plate (2) is a square plate, the side length p of the square plate is 6-9 mm, the height h of the square plate is 0.17-3.5 mm, and the dielectric constant is 2.2-4.4.
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| CN111129783B (en) * | 2020-01-10 | 2020-12-25 | 山西大学 | Function-reconfigurable metamaterial broadband polarization converter/absorber |
| CN112186362B (en) * | 2020-09-15 | 2022-07-01 | 重庆邮电大学 | Dual-frequency miniaturized frequency selective surface with complementary structure |
| CN112201959B (en) * | 2020-09-29 | 2022-05-13 | 中国船舶重工集团公司第七二四研究所 | Large-angle stable miniaturized frequency selection surface |
| CN112751205B (en) * | 2020-12-25 | 2021-11-05 | 南京航空航天大学 | Double-layer medium 2.5-dimensional band-stop frequency selection surface |
| CN115173056B (en) * | 2022-05-20 | 2023-08-08 | 电子科技大学 | Low RCS broadband radome based on antenna reciprocity principle |
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