CN109189142A - On piece analog level clamp circuit - Google Patents
On piece analog level clamp circuit Download PDFInfo
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- CN109189142A CN109189142A CN201811261814.5A CN201811261814A CN109189142A CN 109189142 A CN109189142 A CN 109189142A CN 201811261814 A CN201811261814 A CN 201811261814A CN 109189142 A CN109189142 A CN 109189142A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
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Abstract
Present invention discloses a kind of on piece analog level clamp circuits, including the first clamp module and the second clamp module, the first clamp module is used to adjust the gauze level of gauze level and target level difference less than setting value when for adjusting the gauze level of gauze level and target level difference more than or equal to setting value when, second module；The first clamp module includes at least one diode or metal-oxide-semiconductor, and the second clamp module includes buffer；First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；The other end ground connection of the first clamp module, the positive input terminal level of the buffer is target level.Thus, when gauze level and target level pressure difference are bigger, diode or metal-oxide-semiconductor level clamping play a major role at this time, quickly can release and be filled with a large amount of charge, when gauze level and target level comparison in difference are small, realize that level accurately clamps by buffer at this time.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of on piece analog level clamp circuit.
Background technique
Traditional on piece analog level clamp circuit generallys use the level clamping that analogue buffer realizes circuit node, simulation
Buffer positive input is terminated target clamp level, output end and negative input end and is connected using negative feedback mode, is connected when with output
Gauze level when increasing or decreasing, output feedback arrives negative input end by analogue buffer, buffer start to release charge or
Person is filled with charge, until negative input end perception level and positive input terminal target level error within the scope of offset voltage, delay
Device is rushed to stop working.
This framework gauze capacity ratio is larger or output level and when larger target level diversity ratio, need to be filled with or
The charge that person releases is relatively more, at this time or analogue buffer is required to have very big driving capability or clamping time meeting
It is very long.Very high to clamp buffer requirement, the design of buffer can be more complicated, and power consumption also can be bigger.
Summary of the invention
The object of the present invention is to provide a kind of on piece analog level clamp circuit, realize that level accurately quickly clamps.
In order to solve the above technical problems, the present invention provides a kind of on piece analog level clamp circuit, comprising:
First clamp module and the second clamp module, the first clamp module is for adjusting gauze level and target level
Difference is more than or equal to gauze level when setting value, and second module is less than for adjusting gauze level with target level difference
Gauze level when setting value；The first clamp module includes at least one diode, and the second clamp module includes slow
Rush device；First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；Institute
The other end ground connection of the first clamp module is stated, the positive input terminal level of the buffer is target level.
Optionally, for the on piece analog level clamp circuit, the first clamp module includes multiple concatenated
Diode.
Optionally, for the on piece analog level clamp circuit, the gauze level is high level, described in first
The anode of diode is connect with the output end of the buffer and negative input end, the cathode ground connection of the last one diode.
Optionally, for the on piece analog level clamp circuit, the gauze level is low level, the last one institute
The cathode of diode and the output end and negative input end of the buffer are stated, the anode of first diode connects power supply.
In another aspect of the invention, a kind of on piece analog level clamp circuit structure is also provided, comprising:
First clamp module and the second clamp module, the first clamp module is for adjusting gauze level and target level
Difference is more than or equal to gauze level when setting value, and second module is less than for adjusting gauze level with target level difference
Gauze level when setting value；The first clamp module includes at least one metal-oxide-semiconductor, and the second clamp module includes buffering
Device；First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；It is described
The other end ground connection of first clamp module, the positive input terminal level of the buffer is target level.
Optionally, for the on piece analog level clamp circuit, the first clamp module includes multiple metal-oxide-semiconductors,
The grid of the multiple metal-oxide-semiconductor is connected to the drain electrode of first metal-oxide-semiconductor, and connects the gauze level, the drain electrode of adjacent mos pipe
It is connected with source electrode, the source electrode ground connection of the last one metal-oxide-semiconductor.
Optionally, for the on piece analog level clamp circuit, the gauze level is high level, the metal-oxide-semiconductor
For NMOS tube.
Optionally, for the on piece analog level clamp circuit, the first clamp module includes multiple metal-oxide-semiconductors,
The grid of the multiple metal-oxide-semiconductor is connected to the drain electrode of last first metal-oxide-semiconductor, and connects the gauze level, adjacent mos pipe
Drain electrode is connected with source electrode, and the source electrode of first metal-oxide-semiconductor connects power supply.
Optionally, for the on piece analog level clamp circuit, the gauze level is low level, the metal-oxide-semiconductor
For PMOS tube.
It optionally, further include at least one MOS control pipe for the on piece analog level clamp circuit；The MOS
Control pipe is NMOS control pipe, grid connection first clamp module one end of the NMOS control pipe, source electrode ground connection or logical
At least one resistance eutral grounding is crossed, drain electrode connects power supply by least one resistance；Alternatively, the MOS control pipe is PMOS control pipe,
Grid connection first clamp module one end of the PMOS control pipe, source electrode connect power supply or connect electricity by least one resistance
Source, drain electrode pass through at least one resistance eutral grounding.
In on piece analog level clamp circuit provided by the invention, including the first clamp module and the second clamp module, institute
The first clamp module is stated for adjusting gauze level when gauze level and target level difference are more than or equal to setting value, described the
Two modules are used to adjust the gauze level of gauze level and target level difference less than setting value when；The first clamp module packet
At least one diode or metal-oxide-semiconductor are included, the second clamp module includes buffer；It is described first clamp module one end with it is described
The output end and negative input end of buffer connect, and connect gauze level；The other end ground connection of the first clamp module is described
The positive input terminal level of buffer is target level.As a result, when gauze level and target level pressure difference are bigger, at this time two
Pole pipe or metal-oxide-semiconductor level clamping play a major role, since the forward conduction electric current of diode or metal-oxide-semiconductor is very big, leakage current
With pressure difference exponent function relation, so a large amount of charge quickly can be released and be filled with, the stage is close or low until gauze level
Until the clamp level of diode metal-oxide-semiconductor.When gauze level and target level comparison in difference are small, substantially belong to small signal model
It encloses, level clamping is realized by buffer at this time.Since the quantity of electric charge for needing to be filled with or release is smaller, so simple buffering
Device can realize quick clamp.
Detailed description of the invention
Fig. 1 is the schematic diagram of on piece analog level clamp circuit in the embodiment of the present invention one；
Fig. 2 is the schematic diagram of on piece analog level clamp circuit in the embodiment of the present invention two；
Fig. 3 is the schematic diagram of on piece analog level clamp circuit in the embodiment of the present invention three；
Fig. 4 is the schematic diagram of on piece analog level clamp circuit in the embodiment of the present invention four.
Specific embodiment
On piece analog level clamp circuit of the invention is described in more detail below in conjunction with schematic diagram, wherein table
Showing the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify invention described herein, and still
Realize advantageous effects of the invention.Therefore, following description should be understood as the widely known of those skilled in the art, and
It is not intended as limitation of the present invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Main thought of the invention is, provides a kind of on piece analog level clamp circuit, including the first clamp module and
Second clamp module, when the first clamp module is used to adjust gauze level and target level difference more than or equal to setting value
Gauze level, second module are used to adjust the gauze level of gauze level and target level difference less than setting value when.
Wherein the first clamp module includes at least one diode or metal-oxide-semiconductor, and the second clamp module includes slow
Rush device；First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；Institute
The other end ground connection of the first clamp module is stated, the positive input terminal level of the buffer is target level.
As a result, when gauze level and target level pressure difference are bigger, diode or metal-oxide-semiconductor level clamping are risen main at this time
Effect, since the forward conduction electric current of diode or metal-oxide-semiconductor is very big, leakage current and pressure difference exponent function relation, so can
A large amount of charge is quickly released and is filled with, which is until the clamp level that gauze level is near or below diode metal-oxide-semiconductor
Only.When gauze level and target level comparison in difference are small, substantially belong to small signal region, level pincers is realized by buffer at this time
Position.Since the quantity of electric charge for needing to be filled with or release is smaller, so simple buffer can realize quick clamp.
It is described in detail combined with specific embodiments below.
Embodiment one
On piece analog level clamp circuit structure in the present embodiment, comprising: the first clamp module and the second clamp module,
The first clamp module is used to adjust the gauze level of gauze level and target level difference more than or equal to setting value when, described
Second module is used to adjust the gauze level of gauze level and target level difference less than setting value when；The first clamp module
Including at least one diode, as shown in Figure 1,3 diodes D0, D1, D2 are shown, foundation actual demand, adjustable two
The quantity of pole pipe, the second clamp module includes buffer Buf0；Described first clamp module one end and the buffer
Output end and negative input end connection, and connect gauze level；The other end ground connection of the first clamp module, the buffer
Positive input terminal level is target level Vclamp.
As seen from Figure 1, diode D0, D1, D2 series connection.
In the present embodiment, the gauze level is high level, the positive and buffering of first diode D0
The output end and negative input end of device Buf0, the cathode ground connection of the last one diode D2.
Further include at least one control pipe, illustrates a metal-oxide-semiconductor MN0 here, be specifically as follows NMOS tube, the metal-oxide-semiconductor
Grid connection first clamp module one end of MN0, source electrode are grounded or by least one resistance eutral groundings, in the present embodiment
2 resistance R1, R2 are shown, drain electrode connects power supply by least one resistance, and present embodiment illustrates 1 resistance R0.
For example, if diode conduction voltage drop is 0.7V, it is contemplated that error, pressure drop range may be after three Diode series
Between 1.8V~2.25V, if gauze level is greater than 2.25V, three concatenated diodes can make gauze level with repid discharge
It can be rapidly achieved or close to 1.8V~2.25V, but actually when close to diode drop voltage, be not easy to be exactly equal to
Diode theory pressure drop, it will usually there are several hundred millivolts of error (this error is the setting value), such as 100mV~
500mV, more specifically, such as 200mV~300mV.At this point, gauze voltage and target level difference that is to say this error, then
Buffer Buf0 will play a role, and realize level clamping.
It follows that the fast approaching of gauze level and target level may be implemented in the first clamp module, i.e. coarse adjustment acts on,
And the second clamp module can accurately realize that gauze level is consistent with target level, i.e. accurate adjustment acts on, and in the first clamp
Under the action of module, the second clamp module clamping time be will be greatly reduced, and can fast implement clamp.
Embodiment two
On piece analog level clamp circuit structure in the present embodiment, comprising: the first clamp module and the second clamp module,
The first clamp module is used to adjust the gauze level of gauze level and target level difference more than or equal to setting value when, described
Second module is used to adjust the gauze level of gauze level and target level difference less than setting value when；The first clamp module
Including at least one diode, as shown in Fig. 2, 3 diodes D0, D1, D2 are shown, foundation actual demand, adjustable two
The quantity of pole pipe, the second clamp module includes buffer Buf0；Described first clamp module one end and the buffer
Output end and negative input end connection, and connect gauze level；The other end ground connection of the first clamp module, the buffer
Positive input terminal level is target level Vclamp.
From Figure 2 it can be seen that diode D0, D1, D2 series connection.
In the present embodiment, the gauze level is low level, the cathode of the last one diode D2 delays with described
The output end and negative input end of device Buf0 are rushed, the anode of first diode D0 connects power supply.
Further include at least one control pipe, illustrates described in the grid connection of PMOS tube a MP0, the metal-oxide-semiconductor MP0 here
First clamp module one end, source electrode connect power supply or connect power supply by least one resistance, and present embodiment illustrates directly connect electricity
Source, drain electrode is by least one resistance eutral grounding, and present embodiment illustrates 3 resistance R0, R1, R2.
For example, if diode conduction voltage drop is 0.7V, it is contemplated that error, pressure drop range may be after three Diode series
Between 1.8V~2.25V, if gauze level is less than VDD-2.25V, three concatenated diodes can be with quick charge, gauze electricity
It is flat to be rapidly achieved or close to VDD-1.8V~VDD-2.25V, but actually when close to diode drop voltage, and do not allow
Easily it is exactly equal to diode theory pressure drop, it will usually which there are several hundred millivolts of error (this error is the setting value), examples
Such as -100mV~-500mV, more specifically, such as -200mV~-300mV.At this point, gauze voltage and target level difference namely
It is this error, then buffer Buf0 will play a role, and realize level clamping.
It follows that the fast approaching of gauze level and target level may be implemented in the first clamp module, i.e. coarse adjustment acts on,
And the second clamp module can accurately realize that gauze level is consistent with target level, i.e. accurate adjustment acts on, and in the first clamp
Under the action of module, the second clamp module will not expend for a long time, can fast implement clamp.
Embodiment three
The present embodiment provides a kind of on piece analog level clamp circuit structures, comprising: the first clamp module and the second clamp
Module, the first clamp module are used to adjust the gauze electricity of gauze level and target level difference more than or equal to setting value when
Flat, second module is used to adjust the gauze level of gauze level and target level difference less than setting value when；Described first
Clamping module includes at least one metal-oxide-semiconductor, as shown in figure 3, showing n metal-oxide-semiconductor MN1, MN2 ... MNn, is needed according to practical
It asks, the quantity of adjustable metal-oxide-semiconductor, the second clamp module includes buffer；It is described first clamp module one end with it is described
The output end and negative input end of buffer connect, and connect gauze level；The other end ground connection of the first clamp module is described
The positive input terminal level of buffer is target level Vclamp.
As shown in figure 3, the first clamp module includes multiple metal-oxide-semiconductor MN1, MN2 ... MNn, the multiple metal-oxide-semiconductor
Grid is connected to the drain electrode of first metal-oxide-semiconductor MN1, and connects the gauze level, and the drain electrode of adjacent mos pipe is connected with source electrode,
The source electrode of the last one metal-oxide-semiconductor MNn is grounded.
In the present embodiment, the gauze level is high level, and the metal-oxide-semiconductor is NMOS tube.
Further include at least one control pipe, illustrates a metal-oxide-semiconductor MN0 here, be specifically as follows NMOS tube, the metal-oxide-semiconductor
Grid connection first clamp module one end of MN0, source electrode are grounded or by least one resistance eutral groundings, in the present embodiment
2 resistance R1, R2 are shown, drain electrode connects power supply by least one resistance, and present embodiment illustrates 1 resistance R0.
For example, if metal-oxide-semiconductor MN1, MN2 ... MNn conduction voltage drop is 0.7V, it is contemplated that error, three metal-oxide-semiconductor MN1, MN2,
The pressure drop range for the clamp circuit that MN3 is constituted may be between 0.6V~2.0V, if gauze level is greater than 2.0V, three MOS
Pipe can be rapidly achieved with repid discharge, gauze level or close to 0.6V~2.0V, but actually electric close to metal-oxide-semiconductor pressure drop
It when pressure, is not easy to be exactly equal to metal-oxide-semiconductor theory pressure drop, it will usually which there are several hundred millivolts of error, (this error is described
Setting value), such as 100mV~500mV, more specifically, such as 200mV~300mV.At this point, gauze voltage and target level are poor
Different to that is to say this error, then buffer Buf0 will play a role, and realize level clamping.
It follows that the fast approaching of gauze level and target level may be implemented in the first clamp module, i.e. coarse adjustment acts on,
And the second clamp module can accurately realize that gauze level is consistent with target level, i.e. accurate adjustment acts on, and in the first clamp
Under the action of module, the clamping time of the second clamp module be will be greatly reduced, and can fast implement clamp.
Example IV
The present embodiment provides a kind of on piece analog level clamp circuit structures, comprising: the first clamp module and the second clamp
Module, the first clamp module are used to adjust the gauze electricity of gauze level and target level difference more than or equal to setting value when
Flat, second module is used to adjust the gauze level of gauze level and target level difference less than setting value when；Described first
Clamping module includes at least one metal-oxide-semiconductor, as shown in figure 4, showing n metal-oxide-semiconductor MP1, MP2 ... MPn, is needed according to practical
It asks, the quantity of adjustable metal-oxide-semiconductor, the second clamp module includes buffer；It is described first clamp module one end with it is described
The output end and negative input end of buffer connect, and connect gauze level；The other end ground connection of the first clamp module is described
The positive input terminal level of buffer is target level Vclamp.
As shown in figure 4, the first clamp module includes multiple metal-oxide-semiconductor MP1, MP2 ... MPn, the multiple metal-oxide-semiconductor
Grid is connected to the drain electrode of the last one metal-oxide-semiconductor MPn, and connects the gauze level, and the drain electrode of adjacent mos pipe and source electrode connect
It connects, the source electrode of first metal-oxide-semiconductor MP1 connects supply voltage.
In the present embodiment, the gauze level is low level, and the metal-oxide-semiconductor is PMOS tube.
Further include at least one control pipe, illustrates described in the grid connection of PMOS tube a MP0, the metal-oxide-semiconductor MP0 here
First clamp module one end, source electrode connect power supply or connect power supply by least one resistance, and present embodiment illustrates directly connect electricity
Source, drain electrode is by least one resistance eutral grounding, and present embodiment illustrates 3 resistance R0, R1, R2.
For example, if metal-oxide-semiconductor MP1, MP2 ... MPn conduction voltage drop is -0.7V, it is contemplated that error, three metal-oxide-semiconductor MP1,
MP2, MP3 constitute clamp circuit pressure drop range may between 0.6V~2.0V, if gauze level be less than VDD-2.0V,
Then three metal-oxide-semiconductors can quickly charge to gauze, gauze level is rapidly achieved or close to VDD-0.6V~VDD-
2.0V, but actually when close to metal-oxide-semiconductor pressure drop voltage, it is not easy to be exactly equal to metal-oxide-semiconductor theory pressure drop, it will usually which there are several
Hundred millivolts of error (this error is the setting value), such as -100mV~-500mV, more specifically, such as -200mV
~-300mV.At this point, gauze voltage and target level difference that is to say this error, then buffer Buf0 will play a role, real
Existing level clamping.
It follows that the fast approaching of gauze level and target level may be implemented in the first clamp module, i.e. coarse adjustment acts on,
And the second clamp module can accurately realize that gauze level is consistent with target level, i.e. accurate adjustment acts on, and in the first clamp
Under the action of module, the second clamp module will not expend for a long time, can fast implement clamp.
In conclusion on piece analog level clamp circuit provided by the invention, including the first clamp module and the second pincers
Position module, the first clamp module are used to adjust the gauze electricity of gauze level and target level difference more than or equal to setting value when
Flat, the second clamp module is used to adjust the gauze level of gauze level and target level difference less than setting value when；It is described
First clamp module includes at least one diode or metal-oxide-semiconductor, and the second clamp module includes buffer；First clamp
Module one end is connect with the output end of the buffer and negative input end, and connects gauze level；The first clamp module
Other end ground connection or power supply, the positive input terminal level of the buffer is target level.
As a result, when gauze level and target level pressure difference are bigger, diode or metal-oxide-semiconductor level clamping are risen main at this time
Effect, since the forward conduction electric current of diode or metal-oxide-semiconductor is very big, leakage current and pressure difference exponent function relation, so can
A large amount of charge is quickly released and is filled with, which is until the clamp level that gauze level is near or below diode metal-oxide-semiconductor
Only.When gauze level and target level comparison in difference are small, substantially belong to small signal region, level pincers is realized by buffer at this time
Position.Since the quantity of electric charge for needing to be filled with or release is smaller, so simple buffer can realize quick clamp.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of on piece analog level clamp circuit structure characterized by comprising
First clamp module and the second clamp module, the first clamp module is for adjusting gauze level and target level difference
Gauze level when more than or equal to setting value, second module are less than setting for adjusting gauze level and target level difference
Gauze level when value；The first clamp module includes at least one diode, and the second clamp module includes buffer；
First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；Described
The other end ground connection of one clamp module, the positive input terminal level of the buffer is target level.
2. on piece analog level clamp circuit as described in claim 1, which is characterized in that the first clamp module includes more
A concatenated diode.
3. on piece analog level clamp circuit as claimed in claim 2, which is characterized in that the gauze level is high level,
The anode of first diode is connect with the output end of the buffer and negative input end, the cathode of the last one diode
Ground connection.
4. on piece analog level clamp circuit as claimed in claim 2, which is characterized in that the gauze level is low level,
The cathode of the last one diode is connect with the output end of the buffer and negative input end, the anode of first diode
Connect power supply.
5. a kind of on piece analog level clamp circuit structure characterized by comprising
First clamp module and the second clamp module, the first clamp module is for adjusting gauze level and target level difference
Gauze level when more than or equal to setting value, second module are less than setting for adjusting gauze level and target level difference
Gauze level when value；The first clamp module includes at least one metal-oxide-semiconductor, and the second clamp module includes buffer；
First clamp module one end is connect with the output end of the buffer and negative input end, and connects gauze level；Described
The other end ground connection of one clamp module, the positive input terminal level of the buffer is target level.
6. on piece analog level clamp circuit as claimed in claim 5, which is characterized in that the first clamp module includes more
A metal-oxide-semiconductor, the grid of the multiple metal-oxide-semiconductor are connected to the drain electrode of first metal-oxide-semiconductor, and connect the gauze level, adjacent mos
The drain electrode of pipe is connected with source electrode, the source electrode ground connection of the last one metal-oxide-semiconductor.
7. on piece analog level clamp circuit as claimed in claim 6, which is characterized in that the gauze level is high level,
The metal-oxide-semiconductor is NMOS tube.
8. on piece analog level clamp circuit as claimed in claim 5, which is characterized in that the first clamp module includes more
A metal-oxide-semiconductor, the grid of the multiple metal-oxide-semiconductor are connected to the drain electrode of last first metal-oxide-semiconductor, and connect the gauze level, phase
The drain electrode of adjacent metal-oxide-semiconductor is connected with source electrode, and the source electrode of first metal-oxide-semiconductor connects power supply.
9. on piece analog level clamp circuit as claimed in claim 8, which is characterized in that the gauze level is low level,
The metal-oxide-semiconductor is PMOS tube.
10. on piece analog level clamp circuit as claimed in claim 1 or 5, which is characterized in that further include at least one MOS
Control pipe；The MOS control pipe is NMOS control pipe, the grid connection of the NMOS control pipe the first clamp module one
End, source electrode are grounded or by least one resistance eutral groundings, and drain electrode connects power supply by least one resistance；Alternatively, the MOS control
Pipe is PMOS control pipe, and the PMOS controls grid connection first clamp module one end of pipe, and source electrode connects power supply or passes through
At least one resistance connects power supply, and drain electrode passes through at least one resistance eutral grounding.
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| CN201811261814.5A CN109189142A (en) | 2018-10-26 | 2018-10-26 | On piece analog level clamp circuit |
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| CN201811261814.5A CN109189142A (en) | 2018-10-26 | 2018-10-26 | On piece analog level clamp circuit |
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|---|---|---|---|---|
| CN1145143A (en) * | 1994-03-28 | 1997-03-12 | 英特尔公司 | Electrostatic discharge protection circuits using biased and terminated PNP transistor chains |
| US20040021796A1 (en) * | 2002-07-31 | 2004-02-05 | Lieyi Fang | Clamping circuit with wide input dynamic range for video or other AC coupled signals |
| CN102364851A (en) * | 2011-10-24 | 2012-02-29 | 无锡芯朋微电子有限公司 | Circuit converting high-voltage power supply into low-voltage power supply for enabling zero switching current of chip |
| CN103390884A (en) * | 2013-07-23 | 2013-11-13 | 广州杰赛科技股份有限公司 | Power source detection control device and power supply control system |
| CN209560386U (en) * | 2018-10-26 | 2019-10-29 | 上海海栎创微电子有限公司 | On piece analog level clamp circuit |
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