Preparation method of high-thermal-conductivity side chain type liquid crystal polymer film material
Technical Field
The invention relates to an electronic packaging heat conduction material, in particular to a preparation method of a high heat conduction side chain type liquid crystal polymer film material.
Background
With the development of industrial demands and scientific technology, the requirements on various engineering heat conducting materials are updated and higher. In order to ensure the reliability of the operation of the electronic components at the use environment temperature, a high-heat-dissipation interface material and a packaging material are required to be used, so that heat accumulated by the heating components is quickly and effectively transferred and released, and the service life of the electronic components is prolonged. Therefore, research and development of the polymer-based heat-conducting composite material with high heat conductivity and excellent mechanical property have urgent theoretical significance and practical application value on design and expansion of materials in the fields of microelectronics, electronic information and electronic shielding. The method is far more effective than the method of improving the heat conductivity of heat conducting particles by improving the heat conductivity of the polymer continuous phase matrix, and is a core method for solving the problems that the mechanical properties such as toughness of the polymer are deteriorated, the heat conductivity is poor and the service life of an electronic component is influenced.
Based on phonon heat conduction theory analysis, the premise of obtaining the high-heat-conductivity polymer is to form a heat-conducting particle path or network which is beneficial to phonon transmission in a polymer matrix. Unlike electron hopping and tunneling, CNTs and graphene, which are small numbers of thermally conductive particles, can rapidly increase the electrical conductivity of the polymer, but cannot improve the thermal conductivity, and usually needs to be used in an amount of 30-40 wt% to significantly improve the thermal conductivity of the system, which is attributed to the fact that the thermal transfer is strongly dependent on phonon free path. The amount of the filler is usually required to be more than or equal to 65 wt% for constructing the insulating and heat-conducting particle network, but the electrical insulation and mechanical properties of the polymer are obviously reduced at the moment, the processing performance is poor, and the engineering application of the polymer is seriously influenced.
Therefore, how to consider the high thermal conductivity and excellent mechanical properties of the polymer-based composite material and synchronously realize the highest possible thermal conductivity and mechanical properties of the polymer-based composite material under the condition of lower filling amount of the thermal conductive filler is a problem to be solved urgently.
Disclosure of Invention
In order to solve the defects in the prior art, the invention aims to provide a preparation method of a high-thermal-conductivity side-chain type liquid crystal polymer film material. The high-thermal-conductivity side chain type liquid crystal polymer film material with high thermal conductivity and excellent mechanical property is obtained under the condition of low filling amount of the thermal conductive filler.
The invention is realized by the following technical scheme.
The preparation method of the high-thermal-conductivity side chain type liquid crystal polymer film material provided by the embodiment of the invention comprises the following steps:
1) preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of (0.5-1.5): (2-18) dissolving the side chain liquid crystal polysiloxane in an organic solvent, heating and soaking;
2) pretreatment of inorganic high thermal conductivity particles
Soaking inorganic high-heat-conductivity particles in 20-30% nitric acid solution by mass; taking out, centrifugally separating, and soaking in hydrogen peroxide solution at normal temperature;
3) modification of inorganic high thermal conductivity particles
Then, the sample prepared in the step 2) is prepared according to the mass ratio of (1-10): (5-50) adding the mixture into a tetrahydrofuran solution dissolved with monoamino POSS for ultrasonic dispersion; then taking out for centrifugal separation, collecting the lower-layer precipitate, and then carrying out vacuum drying to obtain inorganic high-thermal-conductivity particles with surface functionalized modification;
4) according to the mass ratio (0.5-1.5): (5-25) dispersing the inorganic high thermal conductive particles with the surface functionalized and modified into the same organic solvent as the organic solvent in the step 1) and carrying out ultrasonic treatment;
5) then according to the mass ratio (0.2-1): (4-10) adding the inorganic high-thermal-conductivity particles with surface functionalized modification into the side chain liquid crystal polysiloxane solution according to the proportion, and uniformly dispersing;
6) casting the mixed solution on a glass template with a fixed size, and heating and volatilizing the mixed solution to form a film according to the selected solvent to obtain a film material with a certain thickness and a certain pattern;
7) annealing treatment in a precisely controlled tube furnace at the temperature of more than or equal to 260 ℃ under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conductivity side chain type liquid crystal polymer film material.
Preferably, in the step 1), the side chain liquid crystal polysiloxane is obtained by polymerizing polysiloxane with trans-4-vinyl-trans-4 '-propylbicyclohexyl, trans-4-propenyl-trans-4' -propylbicyclohexyl, 4-allyloxybenzoic acid-4 '-hydroxybenzenecyano ester and 4-allyloxybenzoic acid-4' -hydroxybenzenemethoxy ester respectively.
Preferably, in the step 1), the organic solvent is one or more of chloroform, tetrahydrofuran, acetone, toluene, 1, 4-dioxane, dimethylformamide and dimethylpyrrolidone.
Preferably, in the step 1), the heating temperature is 25-80 ℃, and the soaking time is 10-12 h.
Preferably, in the step 2), the nitric acid with the concentration of 20-30% by mass is soaked for 4-6h at the temperature of 80-90 ℃; the hydrogen peroxide concentration is 30 percent by mass, and the soaking time is 0.5-1 h;
the centrifugal rotation speed in the step 2) and the step 3) is 6000-.
Preferably, in the step 3), the mass fraction ratio of the tetrahydrofuran solution of the monoamino POSS is tetrahydrofuran: 1:2 monoamino POSS; the ultrasonic dispersion power is 4-6 W.ml-1The temperature is 45-60 ℃, and the reaction time is 1-2 h.
Preferably, the inorganic high thermal conductive particles are boron nitride nanosheets, boron nitride nanotubes or silicon nitride.
Preferably, in the step 6), the solvent is heated to volatilize at a temperature of 25-60 ℃.
Preferably, in the step 6), the thickness of the film material is 100-200 μm.
Preferably, the thermal conductivity of the high thermal conductivity side chain type liquid crystal polymer film material is not less than 0.6004W/mK, the tensile strength is not less than 1.03MPa, and the elongation at break is not less than 106.26%.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the invention adopts a new method combining an intrinsic type preparation process and a filling type preparation process, and prepares the high-heat-conductivity side chain type liquid crystal polymer film material from a multi-scale structure design; the synthesized side chain liquid crystal polysiloxane (LCEs) provides a complete molecular chain network for phonon transfer, and endows the LCEs with high order degree and excellent thermal stability (T)mNot less than 260 ℃. Preparing intrinsic high-thermal-conductivity LCEs through molecular design and actual accurate control; the inorganic high-thermal-conductivity particles with surface functionalization modification are adopted as the thermal conductive filler to carry out doping modification on the thermal conductive filler, the synergistic promotion effect with the thermal conductive filler of 'bridging-penetrating' is realized based on the ordered regulation and control of LCEs, and the high thermal conductivity and excellent mechanical property of the high-thermal-conductivity side-chain liquid crystal polymer film material are synchronously realized under the lower filling amount of the thermal conductive filler.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a flow chart of the preparation of a high thermal conductivity side chain type liquid crystal polymer film material;
FIG. 2 is a schematic diagram of a process for preparing a high thermal conductivity side chain type liquid crystal polymer film material.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
As shown in fig. 1, the preparation method of the high thermal conductivity side chain type liquid crystal polymer film material of the present invention comprises the following steps:
1) preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of (0.5-1.5): (2-18) dissolving the side chain liquid crystal polysiloxane in an organic solvent, heating at the temperature of 25-80 ℃, and soaking for 10-12 h;
wherein the side chain liquid crystal polysiloxane is obtained by graft polymerization of polysiloxane and liquid crystal monomer, and the side chain liquid crystal polysiloxane obtained by polymerization of polysiloxane and trans-4-vinyl-trans-4' -propylbicyclohexane is P1The side chain liquid crystal polysiloxane obtained by polymerizing the polysiloxane and trans-4-propenyl-trans-4' -propylbicyclohexane is P2The side chain liquid crystal polysiloxane obtained by polymerizing the polysiloxane and 4-allyloxybenzoic acid-4' -hydroxybenzonitrile ester is P3Polysiloxane and 4-allyloxybenzoic acid-4The side chain liquid crystal polysiloxane obtained by polymerizing' -hydroxyl benzyloxy ester is P4. The structure is shown in table 1.
TABLE 1 molecular structural formulas of different side chain liquid crystalline polysiloxanes
The synthesis method of the side chain liquid crystal polysiloxane is shown in (P)1:Ying Li,Guangcheng Zhang,Ying Jiang,Zhenzhong Hou,Longgui Peng,Synthesis and Characterization of Side-Chain Liquid-Crystalline Polysiloxanes exhibiting Spherulite Texture of Polymeric Smectic A Phase,Journal of Chemical Research,2011,35(35):715-719.P2: synthesis and performance of Li Ying, cholesteric phase small plate texture polysiloxane side chain liquid crystal, 2016,29(01):80-84.P3: li Ying, Zhang Guang Cheng, Hulingpeak, Smith, synthesis and characterization of smectic polysiloxane side chain liquid crystal, journal of functional polymer 2011,24(02):211-216.P4: jianying, Li Ying, Yangjian, Zhanliang, Chenjing, the synthesis and characterization of novel anisole group-containing nematic polysiloxane side chain liquid crystal, synthetic chemistry, 2013,21(4): 420-423).
The organic solvent is one or more of chloroform, tetrahydrofuran, acetone, toluene, 1, 4-dioxane, dimethylformamide and dimethyl pyrrolidone.
2) Pretreatment of inorganic high thermal conductivity particles
Soaking inorganic high-thermal-conductivity particles (boron nitride nanosheets, boron nitride nanotubes or silicon nitride) in a nitric acid solution with the mass fraction of 20-30%, wherein the temperature is 80-90 ℃, and the soaking time is 4-6 h; taking out for centrifugal separation, centrifuging at a rotating speed of 6000-;
3) modification of inorganic high-heat-conductivity particles
Then, the sample prepared in the step 2) is prepared according to the mass ratio of (1-10): (5-50) adding the mixture into a tetrahydrofuran solution (THF: monoamino POSS ═ 1:2) dissolved with monoamino POSS to perform ultrasonic dispersion (the power is 4-6 W.ml)-1) The reaction time is 1-2h at the set temperature of 45-60 ℃; taking out for centrifugal separation, centrifuging at the rotating speed of 6000-.
4) According to the mass ratio (0.5-1.5): (5-25) dispersing the inorganic high thermal conductive particles with the surface functionalized and modified into the same organic solvent as the organic solvent in the step 1) and carrying out ultrasonic treatment;
5) then according to the mass ratio (0.2-1): (4-10) adding the inorganic high-thermal-conductivity particles with surface functionalized modification into the side chain liquid crystal polysiloxane solution according to the proportion, and uniformly dispersing;
6) the mixed solution is cast on a glass template with a fixed size, and a film material with a given thickness of 100-200 mu m and a pattern is obtained by volatilizing the solvent at the temperature of 25-60 ℃ according to the selected solvent;
7) annealing treatment in a precisely controlled tube furnace at high temperature (not less than 260 ℃) under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conduction side chain type liquid crystal polymer film material.
The following different specific examples are given to further illustrate the invention.
Example 1
1) Preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of 1 g: 10ml of the side chain liquid crystalline polysiloxane (P)1) Dissolving in acetone, heating at 25 deg.C, and soaking for 12 hr;
2) pretreatment of inorganic high-thermal-conductivity particle boron nitride nanosheet
Soaking the boron nitride nanosheets in a nitric acid solution with the mass fraction of 20%, wherein the temperature is 90 ℃, and the soaking time is 4 hours; taking out, centrifuging at 7000r/min for 0.5 hr, and soaking in hydrogen peroxide solution at room temperature with concentration of 30% for 1 hr;
3) modification of inorganic high-thermal-conductivity particle boron nitride nanosheet
Then, mixing the sample prepared in the step 2) according to a mass ratio of 1: 5 was added to a tetrahydrofuran solution (THF: monoamino POSS ═ 1:2) containing an appropriate amount of monoamino POSS, and ultrasonic dispersion was carried out (power: 4W. multidot.ml)-1) The reaction time is 2h at the set temperature of 45 ℃; taking out, performing centrifugal separation, centrifuging at the rotating speed of 6000r/min for 1h, collecting the lower-layer precipitate, and performing vacuum drying to obtain the surface functionalized modified boron nitride nanosheet;
4) dispersing the surface functionalized modified boron nitride nanosheet into the same organic solvent as the organic solvent in the step 1) and performing ultrasonic treatment, wherein the ratio of the boron nitride nanosheet to the organic solvent is 1 g: 15 ml;
5) then, mixing the components in a mass ratio of 1: 6, adding the inorganic high-thermal-conductivity particle solution into the side-chain liquid crystal polysiloxane solution, and uniformly dispersing;
6) and casting the mixed solution on a glass template with a fixed size, and volatilizing the solvent at the temperature of 40 ℃ to form a film according to the selected solvent to obtain the film material with the given thickness of 100-200 mu m and the pattern. As shown in fig. 2.
7) Annealing treatment in a precisely controlled tube furnace at high temperature (not less than 260 ℃) under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conduction side chain type liquid crystal polymer film material.
Example 2
1) Preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of 0.5 g: 4ml of the side-chain liquid crystalline polysiloxane (P)2) Dissolving in dimethylformamide, heating at 60 deg.C, and soaking for 10 hr;
2) pretreatment of inorganic high-heat-conductivity particle boron nitride nanotube
Soaking the boron nitride nanotube in a nitric acid solution with the mass fraction of 25%, wherein the temperature is 90 ℃, and the soaking time is 5 hours; taking out, centrifuging at 6000r/min for 1h, and soaking in hydrogen peroxide solution at room temperature, wherein the concentration of the hydrogen peroxide solution is 30% and the soaking time is 0.5 h;
3) modification of inorganic high heat-conducting particle boron nitride nanotube
Then, mixing the sample prepared in the step 2) according to a mass ratio of 3: 10, adding the mixture into a tetrahydrofuran solution (THF: monoamino POSS ═ 1:2) dissolved with a proper amount of monoamino POSS, and performing ultrasonic dispersion (the power is 4-6 W.ml)-1) The reaction time is 1h at the set temperature of 60 ℃; taking out, performing centrifugal separation, centrifuging at the rotating speed of 7000r/min for 0.5h, collecting the lower-layer precipitate, and performing vacuum drying to obtain the surface functionalized modified boron nitride nanotube;
4) dispersing the surface functionalized modified boron nitride nanotubes into the same organic solvent as the step 1) and carrying out ultrasonic treatment, wherein the ratio is 0.5 g: 6 ml;
5) then, according to the mass ratio of 0.2: 4, adding the boron nitride nanotube solution with the surface functionalized and modified into the side chain liquid crystal polysiloxane solution, and uniformly dispersing;
6) and casting the mixed solution on a glass template with a fixed size, and volatilizing the solvent at the temperature of 25 ℃ to form a film according to the selected solvent to obtain the film material with the given thickness of 100-200 mu m and the pattern.
7) Annealing treatment in a precisely controlled tube furnace at high temperature (not less than 260 ℃) under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conduction side chain type liquid crystal polymer film material.
Example 3
1) Preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of 1.5 g: 18ml of side chain liquid crystalline polysiloxane (P)3) Dissolving in mixed solution of chloroform and tetrahydrofuran, heating at 80 deg.C, and soaking for 10 hr;
dimethylformamide, and one or more of the mixtures.
2) Pretreatment of inorganic high-heat-conductivity particle silicon nitride
Soaking silicon nitride in a nitric acid solution with the mass fraction of 30%, wherein the temperature is 80 ℃, and the soaking time is 6 hours; taking out, centrifuging at 6000r/min for 1h, and soaking in hydrogen peroxide solution at room temperature, wherein the concentration of the hydrogen peroxide solution is 30% and the soaking time is 1 h;
3) modification of inorganic high heat-conducting particle silicon nitride
Then step 2) The prepared sample is 10: 42, adding the mixture into a tetrahydrofuran solution (THF: monoamino POSS ═ 1:2) dissolved with a proper amount of monoamino POSS, and performing ultrasonic dispersion (the power is 4-6 W.ml)-1) The reaction time is 2 hours at the set temperature of 50 ℃; taking out, centrifuging at 8000r/min for 0.5h, collecting lower precipitate, and vacuum drying to obtain surface functionalized modified silicon nitride;
4) dispersing the surface functionalized modified silicon nitride into the same organic solvent as the step 1) and carrying out ultrasonic treatment, wherein the ratio is 1.5 g: 25 ml;
5) then, mixing the components in a mass ratio of 1: 8, adding the inorganic high-thermal-conductivity particle solution into the side-chain liquid crystal polysiloxane solution, and uniformly dispersing;
6) and casting the mixed solution on a glass template with a fixed size, and volatilizing the solvent at the temperature of 60 ℃ to form a film according to the selected solvent to obtain the film material with the given thickness of 100-200 mu m and the pattern.
7) Annealing treatment in a precisely controlled tube furnace at high temperature (not less than 260 ℃) under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conduction side chain type liquid crystal polymer film material.
Example 4
1) Preparation of a solution of a side-chain liquid-crystalline polysiloxane
According to the mass ratio of 0.5 g: 2ml of side chain liquid crystalline polysiloxane (P)4) Dissolving in dimethyl pyrrolidone, heating at 50 deg.C, and soaking for 10 hr;
2) pretreatment of inorganic high-thermal-conductivity particle boron nitride nanosheet
Soaking the inorganic high-thermal-conductivity particle boron nitride nanosheets in a nitric acid solution with the mass fraction of 20% -30%, wherein the temperature is 80-90 ℃, and the soaking time is 4-6 h; taking out for centrifugal separation, centrifuging at a rotating speed of 6000-;
3) modification of inorganic high-thermal-conductivity particle boron nitride nanosheet
Then, mixing the sample prepared in the step 2) according to a mass ratio of 9: 50 to a solution of appropriate amount of monoamino POSS dissolved in tetrahydrofuran (THF:performing ultrasonic dispersion (power is 4-6 W.ml) in monoamino POSS (1: 2)-1) The reaction time is 1-2h at the set temperature of 45-60 ℃; taking out for centrifugal separation, centrifuging at the rotating speed of 6000-.
4) Dispersing the surface functionalized modified boron nitride nanosheet into the same organic solvent as the step 1) and performing ultrasonic treatment, wherein the proportion is 0.8 g: 20ml of the solution;
5) then, mixing the components in a mass ratio of 1: 4, adding the inorganic high-thermal-conductivity particle solution into the side-chain liquid crystal polysiloxane solution, and uniformly dispersing;
6) and casting the mixed solution on a glass template with a fixed size, and volatilizing the solvent at the temperature of 60 ℃ to form a film according to the selected solvent to obtain the film material with the given thickness of 100-200 mu m and the pattern.
7) Annealing treatment in a precisely controlled tube furnace at high temperature (not less than 260 ℃) under the protection of inert gas, and cooling to normal temperature to obtain the high-heat-conduction side chain type liquid crystal polymer film material.
Testing and discussing the Performance of the membranes
The invention puts 100-200 mu m thin film in Hot Disk thermal conductivity meter, measures thermal diffusivity and thermal conductivity of sample, characterizes and analyzes thermal conductivity of sample. The thermal conductivity of four polymer samples synthesized according to the invention was tested in the test and is shown in table 2.
TABLE 2 Performance testing of the samples
As can be seen from Table 2, the high-thermal-conductivity side chain type liquid crystal polymer film material prepared by the invention has excellent thermal conductivity, the thermal conductivity of the high-thermal-conductivity side chain type liquid crystal polymer film material reaches 0.6696W/mK, and the thermal conductivity of the high-thermal-conductivity side chain type liquid crystal polymer film material is not less than 0.6004W/mK and is far higher than that of a common polymer material (about 0.2W/mK), the tensile strength of the high-thermal-conductivity side chain type liquid crystal polymer film material reaches 1.86 MPa; the elongation at break reaches 138.57%, and the elongation at break is not less than 106.26%. Therefore, the high-thermal-conductivity side chain type liquid crystal polymer film material prepared by the method is a liquid crystal film with good thermal conductivity and mechanical properties.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.