CN109166881A - Flexible display apparatus and preparation method thereof - Google Patents
Flexible display apparatus and preparation method thereof Download PDFInfo
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- CN109166881A CN109166881A CN201810827489.8A CN201810827489A CN109166881A CN 109166881 A CN109166881 A CN 109166881A CN 201810827489 A CN201810827489 A CN 201810827489A CN 109166881 A CN109166881 A CN 109166881A
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- glass substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of flexible display apparatus and preparation method thereof, and the preparation method is comprising steps of provide a glass substrate；Form graphene layer or graphene oxide layer on the glass substrate by transfer technique；Thin film transistor (TFT) is formed on the graphene layer or graphene oxide layer；Organic luminescent device is prepared on the thin film transistor (TFT)；The thin film transistor (TFT), organic luminescent device are packaged；Glass substrate is removed, the flexible display apparatus is obtained.Flexible display apparatus proposed by the present invention is using graphene or graphene oxide as flexible base board, reduce the thickness of substrate, realize the slimming of flexible display apparatus, since graphene or graphene oxide have better flexibility, stability, thermal expansivity, be conducive to the preparation process for simplifying flexible display apparatus.
Description
Technical field
The present invention relates to flexible display technologies fields more particularly to a kind of flexible display apparatus and preparation method thereof.
Background technique
Display device of the flexible display as a new generation, due to have be convenient for carrying, it is light-weight, be not easy to break into pieces etc. it is excellent
Point is widely used prospect in personal digital product, car-mounted display and military field etc..Currently, Flexible Displays
Technical difficult points be the manufacture of flexible base board, existing flexible base board thickness is thicker, and preparation process is more complex, flexibility
It is difficult to meet the requirement of flexible display with stability.
Therefore, the prior art has much room for improvement.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of flexible display apparatus and preparation method thereof, by graphene or oxygen
Substrate of the graphite alkene as flexible display apparatus, reduces the difficulty of preparation process, reduces the thickness of substrate, realizes flexible
The slimming of display device.
It is proposed by the present invention the specific technical proposal is: provide a kind of preparation method of flexible display apparatus, the preparation side
Method comprising steps of
One glass substrate is provided；
Form graphene layer or graphene oxide layer on the glass substrate by transfer technique；
Thin film transistor (TFT) is formed on the graphene layer or graphene oxide layer；
Organic luminescent device is prepared on the thin film transistor (TFT)；
The thin film transistor (TFT), organic luminescent device are packaged；
Glass substrate is removed, the flexible display apparatus is obtained.
Further, before forming graphene layer or graphene oxide layer on the glass substrate by transfer technique, institute
State preparation method further include: be surface-treated to glass substrate.
Further, surface treatment step is carried out to glass substrate to specifically include:
Clean the glass substrate；
Surface modification treatment is carried out to the glass substrate after cleaning；
Glass baseplate surface after modification grows initiator.
Further, the glass substrate is cleaned to specifically include:
Etch the glass substrate；
Glass substrate after impregnating etching；
It washs and dries the glass substrate after impregnating.
Further, surface modification treatment is carried out to the glass substrate after cleaning to specifically include:
Glass substrate after soaking and washing；
Successively with the glass substrate after toluene, acetone washing and dry immersion.
Further, the glass baseplate surface growth initiator after modification specifically includes:
Glass substrate after rinsing modification；
Successively with toluene, acetone/water mixed liquor, acetone washing and the glass substrate being dried in vacuo after rinsing.
Further, it forms graphene layer on the glass substrate by transfer technique or graphene oxide layer step is specifically wrapped
It includes:
Graphene layer or graphene oxide layer are grown on transfer substrate；
The spin coating resin material on the graphene layer or graphene oxide layer forms adhesive layer；
Glass substrate is Nian Jie with the adhesive layer；
Remove transfer substrate.
Further, the transfer substrate is copper foil, and the resin material is to be mixed with CuCl, bipyridyl, a- bromo isobutyl
The polymethyl methacrylate of acetoacetic ester.
Further, glass substrate is removed, obtaining the flexible display apparatus step includes: to be cleaned with acetone soak, is made
It obtains glass substrate to separate with the graphene layer or graphene oxide layer, obtains the flexible display apparatus.
The present invention also provides a kind of flexible display apparatus, are prepared using as above any method.
Flexible display apparatus proposed by the present invention reduces substrate using graphene or graphene oxide as flexible base board
Thickness realizes the slimming of flexible display apparatus, due to graphene or graphene oxide have better flexibility, stability,
Thermal expansivity is conducive to the preparation process for simplifying flexible display apparatus.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made
And other beneficial effects are apparent.
Fig. 1 is the structural schematic diagram of flexible display apparatus；
Fig. 2 is the structural schematic diagram of thin film transistor (TFT)；
Fig. 3 a~3h is the preparation method flow chart of flexible display apparatus.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, identical label will be used for table always
Show identical element.
Referring to Fig.1, the flexible display apparatus in the present embodiment includes flexible base board 1, thin film transistor (TFT) 2, organic illuminator
Part 3, encapsulating structure 4.The material of flexible base board 1 is graphene or graphene oxide.Thin film transistor (TFT) 2 is set on flexible base board 1,
Organic luminescent device 3 is set on thin film transistor (TFT) 2, and encapsulating structure 4 is used to carry out thin film transistor (TFT) 2 and organic luminescent device 3
Encapsulation.
In conjunction with Fig. 2, specifically, thin film transistor (TFT) 2 includes substrate 21, buffer layer 22, grid 23, gate insulation layer 24, active
Layer 25, source electrode 26, drain electrode 27, passivation layer 28, pixel electrode layer 29.Flexible base board 1 is the substrate 21 of thin film transistor (TFT) 2, is delayed
Layer 22 is rushed on flexible base board 1, wherein the structure of thin film transistor (TFT) 2 is bottom grating structure, and grid 23 is set on buffer layer 22,
Gate insulation layer 24 covers grid 23, and active layer 25 is set on gate insulation layer 24 and is correspondingly arranged with grid 23, source electrode 26, drain electrode 27
Positioned at active layer 25 both ends and connect respectively with active layer 25, as shown in Figure 1, source electrode 26 is located at one end of active layer 25 and covers
It is stamped the edge of active layer 25, drain electrode 27 is located at the other end of active layer 25 and covers the edge of active layer 25.Passivation layer 28 is set to
On source electrode 26, drain electrode 27 and source electrode 26, drain electrode 27 are covered, passivation layer 17 plays the role of protecting source electrode 15, drain electrode 16.Pixel electricity
Pole layer 29 is set on passivation layer 28 and is connect by via hole with drain electrode 27, and the material of pixel electrode layer 29 is ITO.
Referring again to Fig. 1, organic luminescent device 3 includes first electrode 31, hole injection layer 32, hole transmission layer 33, hair
Photosphere 34, electron transfer layer 35, electron injecting layer 36, second electrode 37.Pixel electrode layer 29 as organic luminescent device 3
One electrode 31, hole injection layer 32, hole transmission layer 33, luminescent layer 34, electron transfer layer 35, the 36, second electricity of electron injecting layer
Pole 37 is cascadingly set in first electrode 31 along the direction far from first electrode 31.
Flexible display apparatus in the present embodiment further includes protective layer 5, and protective layer 5 has the function of obstructing steam, oxygen,
Its surface for being covered in thin film transistor (TFT) 2 and organic luminescent device 3, wherein protective layer 5 is mainly for protective film transistor 2
The film layer of middle 22 or more buffer layer, therefore, protective layer 5 is covered on the surface of the film layer on buffer layer 22.Protective layer 5 can be by
Inorganic, organic material, which is alternately stacked, to be arranged.
Encapsulating structure 4 is located at the outside of protective layer 5, and protective gas is filled between encapsulating structure 4 and protective layer 5, this
Protective gas in embodiment is nitrogen.
Referring to Fig. 3 a~3h, the present embodiment additionally provides the preparation method of above-mentioned flexible display apparatus, the preparation method
Comprising steps of
S1, a glass substrate 10 is provided；
S2, graphene layer or graphene oxide layer, graphene layer or oxygen are formed on the glass substrate 10 by transfer technique
Graphite alkene layer is flexible base board 1, as shown in Fig. 3 a~3d；
S3, thin film transistor (TFT) is formed on graphene layer or graphene oxide layer, thin film transistor (TFT) 2 is obtained, such as Fig. 3 e institute
Show；
S4, organic luminescent device 3 is prepared on thin film transistor (TFT) 2, as illustrated in figure 3f；
S5, thin film transistor (TFT) 2, organic luminescent device 3 are packaged, as shown in figure 3g；
S6, removal glass substrate 10, obtain flexible display apparatus, as illustrated in figure 3h.
Specifically, step S2 includes:
S21, graphene layer or graphene oxide layer are grown on transfer substrate 20, as shown in Figure 3a；
S22, the spin coating resin material on graphene layer or graphene oxide layer form adhesive layer 30, as shown in Figure 3b；
It is S23, glass substrate 10 is be bonded with adhesive layer 30, as shown in Figure 3c；
S24, removal transfer substrate 20, as shown in Figure 3d.
Preferably, transfer substrate 20 is copper foil, growing technique used by graphene layer or graphene oxide layer is chemistry
Be vapor-deposited (CVD) technique, and resin material is the poly-methyl methacrylate for being mixed with CuCl, bipyridyl, a- isobutyl ethyl bromide
Ester (PMMA), it is by the technique that is heating and curing that glass substrate 10 is be bonded with adhesive layer 30, to pass through adhesive layer 30 for glass base
Plate 10 carries out be bonded with graphene layer or graphene oxide layer.
In step s 24, transfer substrate 20 is dissolved by copper etching liquid, then graphene layer or graphite oxide will be formed with
The glass substrate 10 of alkene layer, which takes out and rinsed with clear water, dries, so that graphene layer or graphene oxide layer are transferred to glass base
On plate 10.
It is be bonded in order to carry out glass substrate 10 more preferably with adhesive layer 30, before step S2, the preparation side
Method further include:
S20, glass substrate 10 is surface-treated.
Specifically, step S20 includes:
S201, cleaning glass substrate 10；
S202, surface modification treatment is carried out to the glass substrate after cleaning；
S203, the glass baseplate surface after modification grow initiator.
Step S201 is specifically included: etching glass substrate, wherein etching liquid be 5% hydrofluoric acid solution, erosion the time be 5~
20min；Glass substrate after impregnating etching again, soak are 20% hydrochloric acid solution, and soaking time is 1~2h；It finally washs simultaneously
Glass substrate after dry immersion.
Step S202 is specifically included: the glass substrate after soaking and washing, wherein soak is toluene and y- aminopropyl three
The mixed solution of Ethoxysilane (KH550), soaking temperature are 100~120 DEG C, and soaking time is 2~4h；Successively with toluene,
Glass substrate after acetone washing and dry immersion.
Step S203 is specifically included: the glass substrate after rinsing modification, is protected from light flushing, flushing liquor is toluene, a- bromine
It is 2~4h for the mixed solution of isobutyl acylbromide and triethylamine, washing time；Successively washed with toluene, acetone/water mixed liquor, acetone
The glass substrate washed and be dried in vacuo after rinsing.
In step s3, CVD technique is first passed through successively to grow on graphene layer or graphene oxide layer i.e. substrate 21
SiNx/SiO2As buffer layer 22, by physical vapour deposition (PVD) (PVD) process deposits the first metal layer, (figure is not on buffer layer 22
Show), coating photoresist, the pattern of grid 23 is obtained through overexposure, developing process, recycles acid etch liquid on the first metal layer
It performs etching and obtains grid 23, then by the photoresist lift off on grid 23；It is sequentially depositing gate insulation layer 24 on grid 23, partly leads
Body material layer (not shown), patterned semiconductor material layer obtain active layer 25；Depositing second metal layer (the figure on active layer 25
Do not show), the coating photoresist in second metal layer obtains the pattern of source electrode 26, drain electrode 27, then benefit through overexposure, developing process
With acid etch liquid perform etching obtain source electrode 26, drain electrode 27, then by source electrode 26, drain electrode 27 on photoresist lift off；Source electrode 26,
Passivation layer 28, pixel electrode layer 29 are sequentially depositing in drain electrode 27, pixel electrode layer 29 is connect by via hole with drain electrode 27, to obtain
Obtain thin film transistor (TFT) 2.
In step s 4, pixel electrode layer 29 be successively deposited hole injection layer 32, hole transmission layer 33, luminescent layer 34,
Electron transfer layer 35, electron injecting layer 36, second electrode 37, protective layer 5, pixel electrode layer 29 are first electrode 31, thus
Obtain organic luminescent device 3.
In step s 5, encapsulating structure 4, encapsulating structure 4 are set in the outside of thin film transistor (TFT) 2 and organic luminescent device 3
It is located at the outside of protective layer 5, fills protective gas between encapsulating structure 4 and protective layer 5, to realize flexible display apparatus
Encapsulation, the protective gas in the present embodiment is nitrogen.
In step s 6, removing method used by glass substrate 10 is chemical method, is specially cleaned with acetone soak
Flexible display apparatus in step S5, the adhesive layer 30 between glass substrate 10 and graphene layer or graphene oxide layer are dissolved in
In acetone, so that glass substrate 10 is separated with graphene layer or graphene oxide layer, further takes out and be dried, it is final to obtain
Using graphene layer or graphene oxide layer as the flexible display apparatus of substrate.Relative to the method for laser lift-off or mechanical stripping,
Carrying out removing by chemical method can be effectively reduced the damage of laser lift-off or mechanical stripping to flexible display apparatus.
The flexible display apparatus that the present embodiment proposes reduces base using graphene or graphene oxide as flexible base board 1
The thickness of plate, realizes the slimming of flexible display apparatus, and due to graphene or graphene oxide have better flexibility,
Stability, thermal expansivity, to be conducive to simplify the system of flexible display apparatus while reducing the thickness of flexible display apparatus
Standby technique.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of preparation method of flexible display apparatus, which is characterized in that the preparation method comprising steps of
One glass substrate is provided；
Form graphene layer or graphene oxide layer on the glass substrate by transfer technique；
Thin film transistor (TFT) is formed on the graphene layer or graphene oxide layer；
Organic luminescent device is prepared on the thin film transistor (TFT)；
The thin film transistor (TFT), organic luminescent device are packaged；
Glass substrate is removed, the flexible display apparatus is obtained.
2. preparation method according to claim 1, which is characterized in that forming stone on the glass substrate by transfer technique
Before black alkene layer or graphene oxide layer, the preparation method further include: glass substrate is surface-treated.
3. preparation method according to claim 2, which is characterized in that carry out surface treatment step to glass substrate and specifically wrap
It includes:
Clean the glass substrate；
Surface modification treatment is carried out to the glass substrate after cleaning；
Glass baseplate surface after modification grows initiator.
4. preparation method according to claim 3, which is characterized in that clean the glass substrate and specifically include:
Etch the glass substrate；
Glass substrate after impregnating etching；
It washs and dries the glass substrate after impregnating.
5. preparation method according to claim 3, which is characterized in that at modified to the glass substrate progress surface after cleaning
Reason specifically includes:
Glass substrate after soaking and washing；
Successively with the glass substrate after toluene, acetone washing and dry immersion.
6. preparation method according to claim 3, which is characterized in that the glass baseplate surface growth after modification is drawn
Hair agent specifically includes:
Glass substrate after rinsing modification；
Successively with toluene, acetone/water mixed liquor, acetone washing and the glass substrate being dried in vacuo after rinsing.
7. preparation method according to claim 1, which is characterized in that form graphite on the glass substrate by transfer technique
Alkene layer or graphene oxide layer step specifically include:
Graphene layer or graphene oxide layer are grown on transfer substrate；
The spin coating resin material on the graphene layer or graphene oxide layer forms adhesive layer；
Glass substrate is Nian Jie with the adhesive layer；
Remove transfer substrate.
8. preparation method according to claim 7, which is characterized in that the transfer substrate is copper foil, the resin material
For the polymethyl methacrylate for being mixed with CuCl, bipyridyl, a- isobutyl ethyl bromide.
9. preparation method according to claim 8, which is characterized in that removal glass substrate obtains the Flexible Displays dress
Setting step includes: to be cleaned with acetone soak, so that glass substrate is separated with the graphene layer or graphene oxide layer, obtains institute
State flexible display apparatus.
10. a kind of flexible display apparatus, which is characterized in that using method as described in any one of claims 1 to 9 preparation
At.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810827489.8A CN109166881B (en) | 2018-07-25 | 2018-07-25 | Flexible display device and preparation method thereof |
| PCT/CN2018/113577 WO2020019566A1 (en) | 2018-07-25 | 2018-11-02 | Flexible display apparatus and preparation method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810827489.8A CN109166881B (en) | 2018-07-25 | 2018-07-25 | Flexible display device and preparation method thereof |
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| CN109166881A true CN109166881A (en) | 2019-01-08 |
| CN109166881B CN109166881B (en) | 2020-09-29 |
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| WO (1) | WO2020019566A1 (en) |
Cited By (2)
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| CN111244312A (en) * | 2020-01-19 | 2020-06-05 | 武汉天马微电子有限公司 | Display panel and manufacturing method thereof |
| CN114388708A (en) * | 2020-10-19 | 2022-04-22 | 北京小米移动软件有限公司 | Display panel, disassembling method thereof and electronic equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN109166881B (en) | 2020-09-29 |
| WO2020019566A1 (en) | 2020-01-30 |
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