CN109165007A - Real random number generator based on Quantum geometrical phase effect and thermal agitation - Google Patents
Real random number generator based on Quantum geometrical phase effect and thermal agitation Download PDFInfo
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/58—Random or pseudo-random number generators
- G06F7/588—Random number generators, i.e. based on natural stochastic processes
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Abstract
The present invention is the real random number generator based on Quantum geometrical phase effect and thermal agitation, it stacks gradually including cross-shaped spin current generation layer and from bottom to top: magnetic material layer, insulating layer and cap layer, either include strip spin current generation layer and stack gradually from bottom to top: the first ferromagnetic layer, insulating layer, the second ferromagnetic layer, pinning layer, cap layer, totally two kinds of structures；It is provided with reading and writing two in the cross-shaped spin current generation layer of the first structure to electrode, is provided with writing electrode in the strip spin current generation layer of second of structure, is provided with read electrode in cap layer；The randomness of real random number generator of the present invention is embodied on magnetic material layer or the first ferromagnetic layer, and the write current by regulating and controlling spin current generation layer realizes the randomness of magnetic moment.Simple structure, the adjunct circuit of no complexity, device size is nanoscale, low in energy consumption, can be integrated on various portable IC card or wearable device, has extraordinary application prospect.
Description
Technical field
The present invention relates to the real random number generator based on Quantum geometrical phase effect and thermal agitation, specially one kind is based on
The real random number generator of Quantum geometrical phase effect (SOT) and thermal agitation can be numerical simulation, cryptography and communication security neck
Domain provides the random number of safe high quality, belongs to digital information safety technical field.
Background technique
Today of internet sustainable development, information explosion formula increase, and consequent is information security issue.It is estimated that
The whole world in 2013 just reaches 500,000,000,000 dollars because of economic loss caused by network security problem, and network security has been promoted within 2014
National strategy.And realize that the main means of the network information security are exactly cryptographic technique, including symmetric cryptography, asymmetric encryption, number
Word signature etc., their core is all used to " random code " and carries out plaintext encryption to information, therefore the quality of random number is
Determine the key factor of information security.
The randomizer of early stage is born along with the appearance of programming language, essence be with certain mathematical method by
" seed " recursion goes out random number series, and this random number series are called pseudo random number by we.Nineteen forty-six von Karman proposes flat
Side takes middle method: selecting a m digit Ni as seed, square operation (being denoted as Ni+ 1=(Ni * Ni) ...) is done, at this
Number chooses a number for m position as Ni+1.This algorithm obviously has very big drawback, and not only the period is short but also is unevenly distributed, than
It is always 00000 if 10000 squares take middle result；If just initial value be 3792, square be 14379264, among it number
Word is still 3792.Congruence method, shift instruction method and Mason's Rotation Algorithm for occurring later etc., propose the quality of random number
Height, but above random number has a common drawback, and they are all to have rule being derived by certain mathematical method
Property and certainty, cannot be called real random number；And if the algorithm for generating random number has been cracked, random number series are naturally also
It is cracked.Therefore, there is an urgent need to the higher true random numbers of quality to meet current demand by people.
To think in contemporary cryptology, true random number has following feature: (1) unpredictability, (2) nonrepeatability,
(3) randomness test can be passed through.In order to generate the true random number not being cracked, it is thought that utilizing the day of many physics information sources
Right randomness.Such as radioactive decay, thermal agitation, ELECTRONIC NOISE, source noise, electro coupled oscillator frequency jitter, quantum
The physical noises such as noise, people can not estimate them with a simple formula, have unpredictable randomness.Most simple ratio
Dice, toss a coin test are such as thrown, the ordered series of numbers of generation may be considered true random number, but generate random number by manual method
Speed is slow, and randomness is not high and interferes vulnerable to extraneous factor.Later, Petri was amplified in 2000 by circuit thermal noise source
Method obtained rate be 1.4Mbit/s random sequence；M.Bucci et al. 2003 by low-frequency oscillator with make an uproar
The feedback compensation voltage of acoustic amplifier, has obtained the high quality random numbers of 10Mbit/s；B.Qi in 2010 et al. utilizes delay
The phase noise of self-heterodyne method noise spectra of semiconductor lasers measures, and obtains the random sequence of 500Mbit/s.When random number series
While quality is guaranteed, the speed that randomizer generates random sequence is also constantly being accelerated, the quantum occurred in recent years
Randomizer speed has been even up to the magnitude of Gbit/s.However, either based on circuit noise or quantum noise
Randomizer, have the shortcomings that one it is common: the size of key element is relatively large, can not adapt to now it is wearable, miniature
The electronic industry trend of change.
Chinese invention patent " non-volatile magnetic memory unit and device " (CN99110623) is disclosed is the first generation
MRAM is written using the magnetic field that electric current generates, and shortcoming is to need device size is larger could correct operation；Invention
Patent " MAGNETIC RANDOM ACCESS MEMORY with soft adjoining course " (CN200410006749) is that magnetic tunnel junction is written using electric current
State then needs current density very big when device dimensions shrink, this proposes great difficulty for the production of device；Invention
Patent " method of the magnetic tunnel junction (MTJ) of memory cell and formation memory cell " (CN200980101856) is although be
It is stored using the magnetic-resistance random access of spin transfer torque effect, non-volatile deposit may be implemented as writing mode in electric current
Storage, but fabrication processing is complicated, to the more demanding of etching technics；Likewise, " non-volatile magnetic tunnel junction is brilliant for patent of invention
For body pipe " (CN201180054198) because including two magnetic tunnel junction in transistor, one of them uses antiferromagnetic coupling, causes
The problems such as layer structure complexity and difficult manufacture craft；Patent of invention " spin transfer torque-magnetic tunnel junction device and operation side
Method " (CN201080023820) although be by magnetic element in current switching spin-transfer torque magnetic tunnel junction device from
By the magnetic moment direction of layer, but on the basis of using spin-transfer torque effect control magnetic tunnel junction, still need to use electric current generation
Magnetic field assist overturning；Patent of invention " switching of bipolarity spin transfer " (CN201180063255) is although may be implemented bipolarity
Overturning, but control the magnetospheric direction of magnetization while programmatic method can not be repeated；Patent of invention " the magnetic tunnel for MRAM device
Road junction structure " (CN201580005078) is only that non-volatile memories are realized in magnetic tunneling junction cell, is not that one kind is based on
The real random number generator structure of magnetic tunnel junction.
Summary of the invention
The purpose of the present invention is being directed to the proposed problem of background technique, for information security field for the need of true random number
Ask and current real random number generator existing for some disadvantages, design it is a kind of based on Quantum geometrical phase (SOT) effect and
The real random number generator of thermal agitation, using magnetic material, be fully compatible with silicon technology, it can be achieved that a large amount of industrialization demand.
The technical scheme is that the real random number generator based on Quantum geometrical phase effect and thermal agitation, described
The core of real random number generator structure is to determine spin current generation layer, magnetic material layer and the insulation of magnetic moment direction
Layer, and due to the difference of reading manner, there are two different device architectures；The first structure is using the side for reading Hall resistance
Formula stacks gradually are as follows: spin current generation layer, magnetic material layer, insulating layer and cap layer from bottom to top in vertical direction；Second
Structure is stacked gradually in the vertical direction by the way of reading magnetic tunnel junction (MTJ) magneto-resistor as spin current from bottom to top
Generation layer, the first ferromagnetic layer, insulating layer, the second ferromagnetic layer, pinning layer, cap layer；The spin current generation layer of two kinds of structures is adopted
It is handed over the spin current generation layer of the heavy metal or topological insulator material for having strong spin coupling effect, the first structure in cross
The Hall Bar structure of fork, magnetic material layer, insulating layer and cap layer are sequentially stacked at the right-angled intersection of spin current generation layer
Top；The spin current generation layer of second of structure is in long strip, the first ferromagnetic layer, insulating layer, the second ferromagnetic layer, pinning layer and lid
Cap layers are sequentially stacked in the middle part of spin current generation layer in long strip above；
The magnetic material layer, the first ferromagnetic layer and the second ferromagnetic layer are made of ferromagnetic material, and ferromagnetic material is due to magnetocrystalline
The presence of anisotropic, magnetization curve make sample reach saturation in a certain direction as there are difference for the difference of crystalline axis direction
Externally-applied magnetic field required for magnetized state is minimum, then the direction is referred to as easy magnetizing axis, and magnetocrystalline anisotropic at this time can be minimum；Together
When reach saturated magnetization state in a certain direction and be most difficult to, single layer is being made in magnetic anisotropic energy highest at this time, ferromagnetic material
When film, mainly influenced, easy axis and horizontal direction keeping parallelism by shape anisotropy (demagnetization energy)；When
After depositing a layer insulating on ferromagnetic material layers, interfacial effect, the interface can be generated between ferromagnetic material layers and insulating layer
The effect of effect is better than shape anisotropy, and the magnetic moment direction of ferromagnetic material layers is made to be maintained at vertical film surface direction；It sets ferromagnetic
The magnetic moment direction of material layer is the carrier of information, and the randomness of real random number generator of the present invention is embodied in ferromagnetic material layers magnetic moment
Randomness, and by regulation spin current generation layer write current realize；
The spin current generation layer is made of the material of strong spin coupling effect, comprising: heavy metal or topological insulator；Electric current
After being passed through spin current generation layer, due to spin(-)orbit torque (SOT) effect, asymmetric scattering occurs for electrons, the result is that certainly
The electronics in the edge of eddy flow generation layer and magnetic material layer accumulation single spin direction；It is flat for setting with the film surface of spin current generation layer
Face rectangular co-ordinate, spin current generation layer are passed through sense of current and are set as X-direction, dissipate perpendicular to spin occurs in the Z-direction of film surface
It penetrates and accumulates single spin electronics in spin current generation layer and ferromagnetic material layers interface, and the spin direction accumulated is maintained at the side Y
To；In the first structure, the one direction spinning electron of magnetic material layer and the accumulation of spin current generation layer interface can pass through spin
Torque transfer, and change the magnetic moment direction of magnetic material layer, in second of structure；Spin current generation layer and the first ferromagnetic bed boundary
The one direction spinning electron of place's accumulation can be shifted by spinning moment, and change the magnetic moment direction of the first ferromagnetic layer；Work as write current
When sufficiently large, the magnetic moment of magnetic material layer or the first ferromagnetic layer is pulled to horizontal direction, forms the difficult magnetization side of energy most high state
To；After removing write current, the magnetic energy highest in magnetic material layer or the first ferromagnetic layer at this time, due to magnetic material layer or first
Ferromagnetic layer with insulation interface layer effect caused by anisotropy energy determined, the magnetic energy in magnetic material layer or the first ferromagnetic layer
It will be sent back to the minimum state of magnetic field energy certainly；Vertical film faces upward the state minimum with being all downwards magnetic field energy, occurs in magnetic moment
The effect that thermal agitation will be will receive when deflection randomly returns to vertically upward or vertically downward；Thermal agitation is true in nature
Random entropy source, therefore remove magnetic moment direction after electric current and be maintained at and respectively account for 50% with probability vertically downward vertically upward, this is this hair
Bright real random number generator realizes truly random principle.
Further, when the size of ferromagnetic material layers make it is sufficiently small so that when magnetic material layer only has single magnetic domain,
It can guarantee only one direction of magnetospheric magnetic moment, this is the premise that the present invention is implemented.
The beneficial effects of the present invention are: being not only based on physics entropy source using the real random number generator of structure of the invention
On realize truly random property, and using the simple structure of multiple-level stack, complicated adjunct circuit, can not be substantially reduced device
Size (Nano grade), it is low in energy consumption, it can integrate in various portable IC card and wearable device, there is extraordinary application
Prospect.
Crucial Magnetic moment reversal process is based on SOT effect in the present invention, and theoretically the time in nanosecond rank, generates random number
Rate can reach the order of magnitude of Gbit/s, it is suitable with the most fast quantum random number generator of nowadays rate, can meet it is following more
High data transfer demands.
Detailed description of the invention
Fig. 1 is that the present invention is based on the first knots of Quantum geometrical phase effect and the real random number generator embodiment of thermal agitation
Structure schematic diagram, be directly read Hall resistance and direction of easy axis z-axis structure, be successively from top to bottom spin current generate
Layer, magnetic material layer, insulating layer, cap layer.
Fig. 2 is second of knot of real random number generator embodiment the present invention is based on Quantum geometrical phase effect and thermal agitation
Structure schematic diagram is successively spin current generation layer from top to bottom, the first ferromagnetic layer, non-magnetic using the read operation for reading MTJ magneto-resistor
Layer, the second ferromagnetic layer, pinning layer, cap layer.
The extraordinary Hall effect curve that the first structure of Fig. 3 embodiment is tested when not adding write current, it was confirmed that magnetic at this time
Property material layer magnetic moment direction be vertical direction.
Description of symbols in attached drawing 1: 1-cross spin current generation layer, 2-magnetic material layers, 3-insulating layers, 4-lids
Cap layers, x, y-plane rectangular coordinates axis.
Description of symbols in attached drawing 2:
1.1-strip spin current generation layers, the 2.1-the first ferromagnetic layer, 3-insulating layers, the 2.2-the second ferromagnetic layer, 4-nut caps
Layer, 5-pinning layers, W-writing electrode, R-read electrode.
Specific embodiment
The implementation of technical solution is described in further detail with reference to the accompanying drawing:
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, to this hair
It is bright to be further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to
Limit the present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below each other it
Between do not constitute conflict and can be combined with each other.
Embodiment one
As shown in Fig. 1, the present invention is based on the real random number generators of Quantum geometrical phase effect and thermal agitation, comprising: cross
Spin current generation layer 1, magnetic material layer 2, insulating layer 3, cap layer 4, read operation are the Hall resistance for reading magnetic material layer 2,
Set: the lower plane along cross spin current generation layer 1 as X-axis and Y-axis, then perpendicular to X, Y plane Z-direction from bottom to top
It has stacked gradually: the cross spin current generation layer 1 made of heavy metal material or topological insulator, made of ferromagnetic material
Magnetic material layer 2, the insulating layer 3 being made of insulating material, cap layer 4；Magnetic material layer 2 is since there are boundaries between insulating layer 3
Face effect keeps magnetic moment vertical film surface when without write operation；Cross spin current generation layer 1 uses the Hall of right-angled intersection
A pair of of connection electrode is respectively set in Bar structure in the positive negative direction of X-axis and Y-axis, and the electrode of X-direction access is for accessing
Write current, the electric current that Y direction picks out produce under write current regulation for measuring Hall voltage, cross spin current generation layer 1
It is born from eddy flow；Cap layer 4 is for protecting following insulating layer 3 and magnetic material layer 2.As shown in Figure 1, magnetic material layer 2, insulation
Layer 3, cap layer 4 are sequentially stacked on respectively on the middle part of 1 film surface of cross spin current generation layer.
The present invention is implemented in one, is selected:
The material of cross spin current generation layer is tantalum (Ta), platinum (Pt), tungsten (W), Bi2Se3、Sb2Te3One of；
The material of magnetic material layer is CoFeB or Co；
The material of insulating layer is MgO or AlOx；
The material of cap layer is tantalum (Ta) or titanium (Ti).
In the embodiment of the present invention one, write operation is to apply write current in X-direction electrode, and electronics is flowing through spin current life
Quantum geometrical phase has occurred after stratification, so that spin accumulation (spin direction is Y direction) is generated in magnetospheric interface,
Since spinning moment shifts, the torque direction of magnetic material layer is pulled to level by vertical direction.It is magnetic after removing write current
Material layer is by the minimum principle of magnetic field energy, and random orientation is vertically upward or vertically downward under heat disturbance action.
Further, by the Hall voltage of the electrode measurement magnetic material layer of Y direction, Hall voltage and write current
Ratio is Hall resistance.The Hall resistance measured herein is unusual Hall resistance, and according to well known formula, unusual Hall resistance is just
Than in magnetic moment (vector).Therefore magnetic material layer magnetic moment random orientation vertically upward or vertically downward, two can be embodied not
Same Hall resistance value.When two different Hall resistance values are respectively defined as logical one and logic " 2 ", so that it may defeated
Random number series out.
Further, the structure fabrication processes of real random number generator embodiment one of the present invention are: first preparing skill by film layer
Art be sequentially prepared out on silicon crystal unit cross spin current generation layer 1, magnetic material layer 2, insulating layer 3 and cap layer 4 film,
Then it performs etching and is obtained with micro-nano technology again.Magnetic material layer 2, insulating layer 3 and cap layer 4 in same size polygon or
Circular configuration, in order to ensure magnetic material layer be single magnetic domain, preferably diameter be less than 200nm circular configuration.
Further, using well known magnetron sputtering technique, electron beam evaporation technique or pulsed laser deposition technique,
The film layer preparation of each layer film of real random number generator of the present invention is prepared, the thickness of each layer film is with according to the spy for using material
Property setting.
Embodiment two
As shown in Figure 2, it is real random number generator embodiment second the present invention is based on Quantum geometrical phase effect and thermal agitation
Kind of structural schematic diagram is successively strip spin current generation layer 1.1, the from top to bottom using the read operation for reading MTJ magneto-resistor
One ferromagnetic layer 2.1, insulating layer 3, the second ferromagnetic layer 2.2, pinning layer 5, cap layer 4, the reference frame of setting as in the first embodiment,
Specific structure is the multilayer lamination structure of Z-direction, and the first ferromagnetic layer 2.1, insulating layer 3, the second ferromagnetic layer 2.2, pinning layer
5, cap layer 4 is sequentially stacked on the middle part of strip spin current generation layer 1.1；Wherein: strip spin current generation layer 1.1
It is made of heavy metal material or topological insulator, the first ferromagnetic layer 2.1 and the second ferromagnetic layer 2.2 are made of magnetic material.First
Ferromagnetic layer 2.1 keeps magnetic moment vertical film surface due to interfacial effect existing between insulating layer 3 when without write operation；It is long
Bar shaped spin current generation layer 1.1 connects a pair of electrodes along the positive negative direction both ends of X-axis, which grows to for accessing write current
Bar shaped spin current generation layer 1.1 generates spin current under write current regulation；Second ferromagnetic layer 2.2 is since pinning layer 5 acts on, magnetic moment
Direction keeps immobilizing vertically upward or downwards, and the first ferromagnetic layer 2.1, insulating layer 3 are constituted with the second ferromagnetic layer 2.2
Mtj structure；Cap layer 4 is for protecting following insulating layer 3, the first ferromagnetic layer 2.1 and the second ferromagnetic layer 2.2, cap layer 4 also to use
In access read electrode, it to be used for read operation.
The present invention is implemented in two, is selected:
The material of strip spin current generation layer is tantalum (Ta), platinum (Pt), tungsten (W), Bi2Se3、Sb2Te3One of；
First ferromagnetic layer, the second ferromagnetic layer material be CoFeB；
The material of insulating layer is MgO, Al2O3, one of Cu.
The material of cap layer is tantalum (Ta) or titanium (Ti).
The material of pinning layer is manganese iridium (IrMn) or manganese nickel (NiMn).
In the embodiment of the present invention two, when write operation, is similar to embodiment one, is to apply on writing electrode W to write electricity in the horizontal direction
Stream generates spin accumulation (spin direction is Y direction) in the interface of the first ferromagnetic layer 2.1, the power of the first ferromagnetic layer 2.1
Square direction is pulled to level by vertical direction.After removing write current, the first ferromagnetic layer is made by the minimum principle of magnetic field energy in thermal agitation
With lower random orientation vertically upward or vertically downward.
The place that the embodiment of the present invention two is different from embodiment one is: in embodiment two, read operation is existed by setting
Read electrode R in cap layer 4 reads voltage, then calculates the magneto-resistor of mtj structure.The magnetic moment direction of second ferromagnetic layer 2.2 is fixed,
But randomly there is vertically upward and vertically downward two magnetic moment directions in the first ferromagnetic layer 2.1.Therefore, the first iron of mtj structure
Parallel and antiparallel two states will occur in 2.2 two ferromagnetic layers of magnetosphere 2.1 and the second ferromagnetic layer, according to giant magnetoresistance effect, put down
Row state can measure lower magneto-resistor, and antiparallel state can measure higher magneto-resistor.When two different magnetoelectricity resistance values
When being respectively defined as logical one and logic " 2 ", i.e., it can similarly export random number series.
Further, the structure fabrication processes of real random number generator embodiment two of the present invention are: first preparing skill by film layer
Art is sequentially prepared out standby cross spin current generation layer 1, magnetic material layer 2, insulating layer 3 and cap layer 4 out on silicon crystal unit
Then film is performed etching again and is obtained with micro-nano technology.Magnetic material layer 2, insulating layer 3 and cap layer 4 are more in same size
Side shape or circular configuration, in order to ensure magnetic material layer be single magnetic domain, preferably diameter be less than 200nm circular configuration.
Further, using well known magnetron sputtering technique, electron beam evaporation technique or pulsed laser deposition technique,
The film layer preparation of each layer film of real random number generator of the present invention is prepared, the thickness of each layer film is with according to the spy for using material
Property setting.
Claims (5)
1. the real random number generator based on Quantum geometrical phase effect and thermal agitation, it is characterised in that:
Including what is stacked gradually from bottom to top: spin current generation layer, magnetic material layer, insulating layer, cap layer；The spin current is raw
Stratification is in the Hall Bar structure of cruciform shape, and spin current generation layer is made of heavy metal material or topological insulator, described
Magnetic material layer is made of ferromagnetic material, and the insulating layer is made of insulating material, and the cap layer is by non-ferric conductive metal material
Material is made；
The manufacture craft of the real random number generator is:
First pass through film layer technology of preparing be sequentially prepared out on silicon crystal unit cruciform shape spin current generation layer, magnetic material layer,
The film of insulating layer and cap layer, then performs etching again and obtains with micro-nano technology；The magnetic material layer, insulating layer and nut cap
Layer is sequentially stacked on the central region on the film surface in the spin current generation layer of cruciform shape respectively；
Set: cruciform shape spin current generation layer geometric center is plane rectangular coordinates zero point, front-rear direction in right-angled intersection
For X-axis, left and right directions is Y-axis；It is respectively arranged in the X-axis of cruciform shape spin current generation layer and the positive negative direction of Y-axis
A pair of of connection electrode, in which: the electrode of X-direction access is for accessing write current, and the electric current that Y direction picks out is for measuring suddenly
That voltage；The magnetic material layer generates spin current under write current regulation, the torque direction of magnetic material layer by Vertical Square
To level is pulled to, after removing write current, the magnetic moment random orientation in magnetic material layer is vertically upward or vertically downward.
2. the real random number generator based on Quantum geometrical phase effect and thermal agitation as described in claim 1, it is characterised in that:
The real random number generator includes stacking gradually from bottom to top: spin current generation layer, the first ferromagnetic layer, insulating layer, second
Ferromagnetic layer, pinning layer, cap layer；First ferromagnetic layer, insulating layer and the second ferromagnetic layer three form mtj structure；The spin current
The elongated structure of generation layer, strip spin current generation layer are made of heavy metal material or topological insulator, first iron
Magnetosphere and the second ferromagnetic layer are made of ferromagnetic material, and the insulating layer is made of insulating material, and the cap layer is by non-ferric conduction
Metal material is made；First ferromagnetic layer, insulating layer, the second ferromagnetic layer, pinning layer, cap layer are in the polygon or circle of same size
Shape structure；
The manufacture craft of the real random number generator is:
It first passes through film layer technology of preparing and is sequentially prepared out strip spin current generation layer, the first ferromagnetic layer, insulation on silicon crystal unit
The film of layer, the second ferromagnetic layer, pinning layer, cap layer, then performs etching again and obtains with micro-nano technology；First ferromagnetic layer, absolutely
Edge layer, the second ferromagnetic layer, pinning layer, cap layer are sequentially stacked on respectively on the film surface of elongated spin current generation layer
Central region；
Set: for strip spin current generation layer geometric center as plane rectangular coordinates zero point, front-rear direction is X-axis, left and right directions
It is vertically upward Z axis for Y-axis；It is provided with a pair in the positive negative direction of X-axis of strip spin current generation layer and writes electricity for accessing
The writing electrode of stream is provided with read electrode along the cap layer top of Z-direction, and the electric current that the read electrode picks out is for measuring Hall
Voltage；When applying write current in writing electrode, generating direction in the interface of the first ferromagnetic layer is the spin accumulation along Y-axis,
The torque direction of first ferromagnetic layer is pulled to level by vertical direction, after removing write current, the magnetic moment direction of the first ferromagnetic layer with
Machine is orientated vertically upward or vertically downward, and the read electrode is used to read voltage, then calculates the magneto-resistor of mtj structure, and second
The magnetic moment direction of ferromagnetic layer is fixed.
3. the real random number generator based on Quantum geometrical phase effect and thermal agitation as described in claim 1, it is characterised in that:
The material of the cross spin current generation layer is tantalum (Ta), platinum (Pt), tungsten (W), Bi2Se3、Sb2Te3One of；The magnetic
Property material layer material be CoFeB or Co；The material of the insulating layer is MgO or AlOx；The material of the cap layer is tantalum
(Ta) or titanium (Ti).
4. the real random number generator based on Quantum geometrical phase effect and thermal agitation as claimed in claim 2, it is characterised in that:
The material of the strip spin current generation layer is tantalum (Ta), platinum (Pt), tungsten (W), Bi2Se3、Sb2Te3One of；Described
One ferromagnetic layer, the second ferromagnetic layer material be CoFeB；The material of the insulating layer is MgO, Al2O3, one of Cu, the lid
The material of cap layers is tantalum (Ta) or titanium (Ti), and the material of the pinning layer is manganese iridium (IrMn) or manganese nickel (NiMn).
5. the real random number generator as described in claim 1 or claim 2 based on Quantum geometrical phase effect and thermal agitation,
It is characterized by: the magnetic material layer, insulating layer and cap layer are in the polygon or round structure of same size, when being round
When structure, setting diameter of a circle is less than 200nm；First ferromagnetic layer, insulating layer, the second ferromagnetic layer, pinning layer, cap layer
It is the polygon or round structure in same size, when for circular configuration, setting diameter of a circle is less than 200nm.
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Cited By (5)
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| CN110752288A (en) * | 2019-09-29 | 2020-02-04 | 华中科技大学 | Method for constructing reconfigurable PUF (physical unclonable function) based on device with SOT (spin on temperature) effect |
| WO2020191616A1 (en) * | 2019-03-26 | 2020-10-01 | 深圳市汇顶科技股份有限公司 | Integrated apparatus having random signal generator and preparation method therefor, and electronic device |
| CN111983530A (en) * | 2020-07-21 | 2020-11-24 | 电子科技大学 | Magnetic insulator-based planar spin valve magneto-resistance sensor and preparation method thereof |
| CN112445457A (en) * | 2019-08-30 | 2021-03-05 | 台湾积体电路制造股份有限公司 | Probabilistic random number generator and method for generating a stream of data bits containing probabilistic random bits |
| CN113257992A (en) * | 2021-06-24 | 2021-08-13 | 华中科技大学 | Magneton valve structure based on topological insulator material and spin orbit torque effect |
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