CN109153107A - Polishing pad - Google Patents
Polishing pad Download PDFInfo
- Publication number
- CN109153107A CN109153107A CN201880001838.9A CN201880001838A CN109153107A CN 109153107 A CN109153107 A CN 109153107A CN 201880001838 A CN201880001838 A CN 201880001838A CN 109153107 A CN109153107 A CN 109153107A
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- CN
- China
- Prior art keywords
- polishing
- polishing pad
- groove portion
- roughness
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims abstract description 180
- 238000005187 foaming Methods 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims description 53
- 239000011347 resin Substances 0.000 claims description 53
- 229920005992 thermoplastic resin Polymers 0.000 claims description 7
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920005668 polycarbonate resin Polymers 0.000 claims description 3
- 239000004431 polycarbonate resin Substances 0.000 claims description 3
- -1 glycol ester Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 25
- 239000010410 layer Substances 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 206010000269 abscess Diseases 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
- C08L67/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L69/00—Compositions of polycarbonates; Compositions of derivatives of polycarbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/02—Polythioethers; Polythioether-ethers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The purpose of the present invention is to provide a kind of polishing pad, the discharge characteristic with excellent polishing performance and polishing slurries.The polishing pad has polishing portion and groove portion on burnishing surface, wherein the surface of the groove portion has unexpanded portion, and the surface of the polishing portion, which is exposed, foaming portion.
Description
Technical field
The present invention relates to a kind of polishing pad, the discharge characteristic with excellent polishing performance and polishing slurries.
Background technique
All the time, in the polishing treatment of disk and the thin-plate members such as semiconductor crystal wafer in hard disk drive (HDD),
Due to requiring not generate the processing of minute scratch marks and potential scratch etc. on the surface of handled object, supply is containing micro- on one side
The polishing slurries of small abrasive grain carry out smooth mirror surface processing using the polishing pad of non-woven fabric type or the figure that foams on one side.
In order to realize that smooth mirror surface is processed, it is desirable that polishing pad not only has polishability, and the also discharge with polishing slurries is special
Property.Therefore, in order to improve polishing slurries supply and discharge balance (discharge characteristic), propose a kind of polishing pad, be
Has slotted polishing layer on polished surface, and the mean roughness (Ra) of the inner surface of the slot is 1.0~5.0 μm of (patent texts
It offers 1).
But in the polishing pad of patent document 1, due to forming slot in porous material by cutting etc., and pass through
The post-processings such as laser fusing, so that slot inner surface is made for non-porous matter surface, so processing is very complicated.In addition, for polishing
The state (especially roughness) of the polished surface of layer does not have special provision, and presence cannot realize polishability and polishing simultaneously
The problem of discharge characteristic of slurry, accordingly, there exist cannot achieve excellent smooth mirror surface processing sometimes.
Citation
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2006-186239 bulletin
Summary of the invention
Subject to be solved by the invention
The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a kind of with excellent polishing performance and throwing
The polishing pad of the discharge characteristic of light slurry.
For solving the technological means of project
The polishing pad of embodiments of the present invention has polishing portion and groove portion in burnishing surface, wherein the surface of the groove portion
With unexpanded portion, the surface of the polishing portion, which is exposed, foaming portion.
In the polishing pad of above embodiment, burnishing surface, which has, polishes the handled object as polishing object
It polishing portion and is discharged for the polishing slurries of polishing pad will to be supplied to when polishing to handled object from polishing pad to outside
Groove portion.Since the foaming portion of foaming body is exposed on the surface of polishing portion, and the surface of groove portion has unexpanded portion, therefore,
Form following state: the maximum height roughness (Rz) on polishing portion surface is greater than the maximum height roughness (Rz) on groove portion surface,
The arithmetic average roughness (Ra) that the arithmetic average roughness (Ra) on polishing portion surface is greater than groove portion surface is big.
In the polishing pad of embodiments of the present invention, the maximum height roughness (Rz) on the surface of the groove portion is 10 μm
~30 μm, the maximum height roughness (Rz) on the surface of the polishing portion is 30 μm~100 μm.
In the polishing pad of embodiments of the present invention, the arithmetic average roughness (Ra) on the surface of the groove portion is 0.1 μ
M~10 μm, the arithmetic average roughness (Ra) on the surface of the polishing portion are 10 μm~45 μm.
In the polishing pad of embodiments of the present invention, (the maximum height roughness (Rz) on the surface of the polishing portion)-
The value of (the maximum height roughness (Rz) on the surface of the groove portion) is 20 μm~70 μm.
In the polishing pad of embodiments of the present invention, (arithmetic average roughness (Ra) on the surface of the polishing portion)-
The value of (arithmetic average roughness (Ra) on the surface of the groove portion) is 5 μm~35 μm.
The polishing pad of embodiments of the present invention has foamed resin, and the foamed resin has three-dimensional bubble structure
And be made of thermoplastic resin, the thermoplastic resin is selected from by polyphenylene sulfide, polyethylene terephthalate tree
At least one of the group of rouge and polycarbonate resin composition.
Invention effect
Embodiment according to the present invention, by making the surface of groove portion that there is unexpanded portion, so as to will successfully throw
Light slurry is discharged from polishing pad.Accordingly it is possible to prevent being mixed into the polishing residue (polishing in polishing slurries by polishing treatment
Residue) it is trapped in polishing pad.Further, since successfully polishing slurries can be discharged from polishing pad, it is possible to anti-
Only the temperature of polishing pad increases., its rough surface on the other hand, exposed due to foaming portion on the surface of polishing portion, i.e., so mentioning
The high polishing performance of polishing portion, in addition, capturing this point, the polishing performance of polishing portion in the foaming portion that polishing slurries are exposed
Also it improves.
Detailed description of the invention
Fig. 1 is the fragmentary side cross-sectional view of polishing pad involved in embodiments of the present invention.
Fig. 2 is the part of resin component used in the manufacturing method example of the polishing pad involved in embodiments of the present invention
Side sectional view.
Fig. 3 (a) is groove portion formation mould used in the manufacturing method example of polishing pad involved in embodiments of the present invention
Has the explanatory diagram of component entirety, Fig. 3 (b) is the line A-A cross-sectional view of groove portion formation mold component.
Fig. 4 be using groove portion formation with mold component manufacture embodiments of the present invention involved in the manufacturing method of polishing pad show
The explanatory diagram of example.
Specific embodiment
In the following, being illustrated using attached drawing to polishing pad involved in embodiments of the present invention.
As shown in Figure 1, in the polishing pad 1 involved in embodiments of the present invention, the polishing on the surface as polished side
Face 10 has polishing portion 11 and groove portion 12.Polishing portion 11 is for throwing to the handled object (not shown) as polishing object
The position of light.Groove portion 12 is for will be supplied to the polishing slurries and polishing residue of polishing pad when polishing to handled object
From burnishing surface 10 to the position of outside discharge.
Polishing pad 1 has foamed resin 15, and it is that the surface in unexpanded portion is not sent out that the foamed resin 15, which has surface layer,
The foaming portion 14 of alveolar layer 13 and the inside that the unexpanded layer 13 in surface is set.In polishing pad 1, the foaming portion of foamed resin 15
14 polishing portion 11 substantially whole surface expose.Therefore, in polishing pad 1, the surface of polishing portion 11 does not have surface and does not send out
Alveolar layer 13.
The foaming portion 14 of foamed resin 15 is the three-dimensional bubble intensively formed by multiple bubbles 17 that walls 16 divide
Structure.In polishing portion 11, since three-dimensional bubble structure is exposed from surface, so bubble 17 is presented on the surface of polishing portion 11
Inner surface expose form.Therefore, the surface of polishing portion 11 becomes porous structure.In polishing portion 11, pass through benefit in advance
The unexpanded layer 13 in surface is removed with polishing treatment etc., so as to so that foaming portion 14 is exposed.
On the other hand, the surface of groove portion 12 has the unexpanded portion of foamed resin 15.That is, the surface of groove portion 12 becomes table
The unexpanded layer 13 in face.Without being formed by bubble obtained from foaming processing on the unexpanded layer 13 in surface.In polishing pad 1,
The substantially the entire area on the surface of groove portion 12 becomes the unexpanded layer 13 in surface as unexpanded portion.Therefore, in the table of groove portion 12
There is no the inside of exposing bubble 17, the i.e. inner surface of walls 16 on face, so, do not expose porous structure.
According to above content, become the surface of the groove portion 12 of the unexpanded layer 13 in surface be it is smooth, exposing has foaming portion 14
Polishing portion 11 surface than groove portion 12 rough surface.That is, the maximum height roughness (Rz) and calculation on the surface of polishing portion 11
The value of art mean roughness (Ra) is all than the maximum height roughness (Rz) and arithmetic average roughness (Ra) on the surface of groove portion 12
Value it is big.It should be noted that in the present specification, " maximum height roughness (Rz) " and " arithmetic average roughness (Ra) " is
The value obtained is measured with laser microscope (being manufactured by Keyence company, VX-X150).
The maximum height roughness (Rz) on the surface of polishing portion 11 is not specifically limited, such as is mentioned from using coarse surface
From the viewpoint of the polishing performance of high polishing portion 11, lower limit value is preferably 20 μm or more, the foaming being exposed from polishing slurries
From the viewpoint of the inner surfaces of the walls 16 in portion 14 captures so that the polishing performance of polishing portion 11 further increases, more preferably
25 μm or more, particularly preferably 30 μm or more.On the other hand, it such as from the viewpoint of easily fabricated foamed resin 15, throws
The upper limit value of the maximum height roughness (Rz) on the surface in light portion 11 be preferably 100 μm hereinafter, more preferably 65 μm hereinafter, especially
Preferably 55 μm or less.
The arithmetic average roughness (Ra) on the surface of polishing portion 11 is not specifically limited, such as is mentioned from using coarse surface
From the viewpoint of the polishing performance of high polishing portion 11, lower limit value is preferably 10 μm or more, the foaming being exposed from polishing slurries
From the viewpoint of the inner surfaces of the walls 16 in portion 14 captures so that the polishing performance of polishing portion 11 further increases, more preferably
15 μm or more, particularly preferably 25 μm or more.On the other hand, it such as from the viewpoint of easily fabricated foamed resin 15, throws
The upper limit value of the arithmetic average roughness (Ra) on the surface in light portion 11 is preferably 45 μm hereinafter, particularly preferably 35 μm or less.
The maximum height roughness (Rz) on the surface of groove portion 12 is not specifically limited, such as from easily fabricated foamed resin
From the viewpoint of 15, lower limit value is preferably 10 μm or more, and particularly preferably 15 μm or more.On the other hand, such as from successfully
Polishing slurries are discharged from polishing pad, are mixed into polishing slurries and the polishing treatment to handled object to be reliably prevented
In polishing residue be trapped on polishing pad from the viewpoint of, the upper limit value of maximum height roughness (Rz) be preferably 30 μm with
Under, from successfully by polishing slurries from polishing pad be discharged and be reliably prevented polishing pad temperature increase from the viewpoint of, more preferably
For 25 μm hereinafter, particularly preferably 20 μm or less.
The arithmetic average roughness (Ra) on the surface of groove portion 12 is not specifically limited, such as from easily fabricated foamed resin
From the viewpoint of 15, lower limit value is preferably 0.1 μm or more, and particularly preferably 0.5 μm or more.On the other hand, such as from smooth
Polishing slurries are discharged from polishing pad on ground, and are reliably prevented and are mixed into polishing slurries and the polishing treatment to handled object
In polishing residue be trapped on polishing pad from the viewpoint of, the upper limit value of arithmetic average roughness (Ra) be preferably 10 μm with
Under, from by polishing slurries smoothly from polishing pad be discharged and be reliably prevented polishing pad temperature increase from the viewpoint of, more preferably
For 5 μm hereinafter, particularly preferably 3 μm or less.
(the maximum height roughness (Rz) on the surface of polishing portion 11)-(maximum height roughness on the surface of groove portion 12
(Rz)) value, i.e. the maximum height roughness on the surface of the maximum height roughness (Rz) and groove portion 12 on the surface of polishing portion 11
(Rz) difference between is not specifically limited, such as from the sight for improving the balance between polishing performance and the discharge characteristic of polishing slurries
Point considers that lower limit value is preferably 20 μm or more, particularly preferably 30 μm or more.On the other hand, the surface of polishing portion 11 is most
The upper limit value of difference between the maximum height roughness (Rz) on the surface of big height roughness (Rz) and groove portion 12 is not limited especially
Fixed, from the viewpoint of easily fabricated foamed resin 15, preferably 70 μm hereinafter, particularly preferably 60 μm or less.
(arithmetic average roughness (Ra) on the surface of polishing portion 11)-(arithmetic average roughness on the surface of groove portion 12
(Ra)) value, the i.e. arithmetic average roughness on the surface of the arithmetic average roughness (Ra) and groove portion 12 on the surface of polishing portion 11
(Ra) difference between is not specifically limited, such as from the sight for improving the balance between polishing performance and the discharge characteristic of polishing slurries
Point considers that lower limit value is preferably 5 μm or more, particularly preferably 10 μm or more.On the other hand, the arithmetic on the surface of polishing portion 11
The upper limit value of difference between the arithmetic average roughness (Ra) on the surface of mean roughness (Ra) and groove portion 12 is not specifically limited,
From the viewpoint of easily fabricated foamed resin 15, preferably 35 μm hereinafter, particularly preferably 30 μm or less.
The material of foamed resin 15 is not specifically limited, and can be enumerated such as polyphenylene sulfide (PPS resin), be gathered
The hard resins such as ethylene glycol terephthalate (PET resin) and polycarbonate resin (PC resin).
In addition, the thickness of foamed resin 15 possessed by polishing pad 1 is not specifically limited, can enumerate for example, about
The range of 0.5~2.0mm, in polishing pad 1, about 1.0mm.In addition, the depth of groove portion 12 is not specifically limited, can enumerate
The for example, about range of 0.2~1.0mm out, in polishing pad 1, about 0.5mm.
Foamed resin 15 has the three-dimensional honeycomb structure constituted as follows, i.e., by walls is divided into multiple gas
Steep (abscess) and the mutually independent region of these abscesses.Mean air bubble diameter is not specifically limited, such as preferably 4~50 μm,
Average bubble wall thickness is not specifically limited, such as preferably 1~5 μm.Herein, bubble diameter is by the gas in arbitrary section
Bubble is scaled the diameter of bowlder of the same area, and mean air bubble diameter refers to the flat of the bubble diameter of optional 10 bubbles
Mean value.In addition, bubble wall thickness is the minimum thickness of the walls in arbitrary section between adjacent bubbles, average bubble wall thickness
Refer to the average value of the bubble wall thickness of optional 10 positions.It can be by with scanning electron microscope (SEM, day
This electronic manufacture) macrograph of foamed resin 15 observed carries out image procossing, thus seek mean air bubble diameter and
Average bubble wall thickness.
When mean air bubble diameter is less than 4 μm, it is maintained at the abrasive grain inside bubble and tails off, polishing velocity reduces, and
Stable burnishing surface can not be obtained, when mean air bubble diameter is more than 50 μm, the intensity of walls is insufficient, can not obtain stable
Polishing condition causes surface quality to decline, while a large amount of abrasive grain of aggregation and generating second particle in bubble, causes to hold
It is also easy to produce the surface defects such as scratch.By the way that mean air bubble diameter is set in the range, so that bubble structure can be made more optimized,
And polishing velocity is excellent.
In addition, the ratio of mean air bubble diameter and average walls thickness is preferably 4 or more 10 or less.When average bubble is straight
When the ratio of diameter and average walls thickness is less than 4, it is maintained at the abrasive grain inside bubble i.e. abrasive grain and tails off, polishing velocity
Also it will decline, and stable burnishing surface can not be obtained, when the ratio is more than 10, the intensity of walls is insufficient, can not obtain
Stable polishing condition, and polishing velocity can also decline.
Next, being said with reference to manufacturing method example of the attached drawing to polishing pad 1 involved in embodiments of the present invention
It is bright.
As shown in Fig. 2, using flat resin component 20, being unexpanded with surface layer in the manufacture of polishing pad 1
The unexpanded foaming portion 14 layer 13 and be arranged in inside the unexpanded layer 13 in surface in the surface in portion.It is provided with the unexpanded layer 13 in surface
The flat surface of side is the surface of the polished side of polishing pad 1.Therefore, the outer surface of the unexpanded layer 13 in the surface of resin component 20 is big
It causes flat.The thickness with a thickness of above-mentioned foamed resin 15 of resin component 20, the unexpanded layer 13 in the surface of resin component 20
Thickness be not specifically limited, for example, about 25~100 μm of range can be enumerated, in resin component 20, about 50 μm.Tree
The thickness of the foaming portion 14 of rouge component 20 is the surface that the surface and the back side of resin component 20 are subtracted from the thickness of resin component 20
Thickness obtained from the thickness of unexpanded layer 13.
Firstly, forming a groove 12 on the unexpanded layer 13 in the surface of above-mentioned resin component 20.Formation as groove portion 12
Method, for example, can enumerate as shown in Fig. 3 (a), (b) using the groove portion formation mold with blade-shaped protrusions portion 22
The forming method of part 21.It is in Boping plate that groove portion, which is formed with mold component 21,.Groove portion forms the protrusion 22 for using mold component 21
Configuration be not specifically limited, in Fig. 3 (a), multiple protrusions 22 are formed as concentric circles at substantially equal intervals.In addition, prominent
The cross sectional shape for playing portion 22 is not specifically limited, as shown in Fig. 3 (b), in groove portion formation in mold component 21, protrusion 22
Cross sectional shape is have a generally triangular shape.
By contacting groove portion formation mold component 21 with the resin component 20 in Fig. 2, and with authorized pressure by slot
The unexpanded layer 13 in the surface of top to the resin component 20 of the protrusion 22 of portion's formation mold component 21 presses, to make surface
Unexpanded layer 13 is pushed to 14 direction of foaming portion, and then can form a groove 12 on polishing pad 1.Therefore, with the groove portion with Fig. 3
Form the corresponding mode in position of the protrusion 22 with mold component 21, the shape on the unexpanded layer 13 in the surface of resin component 20
At groove portion 12.In addition, the depth of groove portion 12 is correspondingly determined with the height of protrusion 22.It therefore, can be according to required
The depth of groove portion 12 suitably selects the height of protrusion 22, such as can enumerate the range of about 0.2~1.0mm, is being used for
The groove portion for manufacturing polishing pad 1 is formed in mold component 21, and the height of protrusion 22 is about 0.5mm.As groove portion formation mould
Have the material of component 21, such as metal and hard resin can be enumerated etc..
As the method for contacting groove portion formation mold component 21 with resin component 20, for example, as shown in figure 4, passing through
Roll shape is made in groove portion formation mold component 21, and on one side rotates the groove portion formation mold component 21 of roll shape,
The unexpanded layer 13 in the surface of protrusion 22 to resin component 20 is pressed against with authorized pressure on one side, so as in resin component 20
On form a groove 12.
Position in the surface of the polished side of the resin component 20 of groove portion 12, other than groove portion 12 is formed with as polishing portion
11 and function.By removing the unexpanded layer 13 in surface at the position other than groove portion 12 using polishing treatments such as polishings, thus
The foaming portion 14 of resin component 20 can be made to expose as polishing portion 11, and then polishing pad 1 can be made.
The thickness for the foamed resin 15 including the unexpanded layer 13 in surface being removed by polishing etc. is not limited especially
It is fixed, for example, about 50~200 μm of removal range can be enumerated, in the polishing pad 1 involved in embodiment, due to resin portion
The thickness of the unexpanded layer 13 in the surface of part 20 is about 50 μm, therefore it shows the form after about 100 μm of removal.
In the above-mentioned manufacturing method example of polishing pad 1, by by the protrusion 22 of blade-like with have surface it is unexpanded
Layer 13 and the resin component 20 of foaming portion 14 contact, so as to form the smooth groove portion 12 in surface, therefore, polishing easy to manufacture
Pad 1.In addition, by contacting protrusion 22 with resin component 20, so as to form a groove 12, therefore, change can be passed through
The shape and configuration of protrusion 22 change the shape and configuration of groove portion 12, so as to improve the design freedom of groove portion 12.
The manufacturing method of resin component 20 with the unexpanded layer 13 in surface and foaming portion 14 is not specifically limited, and can be made
With well known method.For example, following methods: the formed body of defined unexpanded resin is enclosed in high-pressure bottle, and
Inert gas is injected into the high-pressure bottle, and penetrates into inert gas in formed body under an increased pressure.In infiltration inertia
After gas, release stress the pressure in container, then thermoforming body and make its foaming, then be cooled to body, and then produce
Resin component 20 with surface unexpanded layer 13 and foaming portion 14.Alternatively, being used for by the way that foam nucleating agent to be added in advance
It is formed in the thermoplastic resin layer of foaming layer or is added to crystallization nucleating agent and crystallization promoter in advance and be used to form non-foamed
In the thermoplastic resin layer of layer, the foaminess of each resin layer can also be controlled to a certain extent.In addition, by using specified
Resin is as the thermoplastic resin for being used to form each layer, so as to tighter control foaminess.On suitably adjusting
Foaming condition is stated, so as to the size, the size of walls 16 and the high density state of bubble 17 etc. for adjusting bubble 17, Jin Erke
To adjust the maximum height roughness (Rz) and arithmetic average roughness (Ra) of polishing portion 11.
Polishing pad involved in embodiments of the present invention can be used for such as disk, semiconductor crystal wafer, various bases
In the burnishing device that plate and electronic material are polished.As the burnishing device, following burnishing device etc. can be enumerated,
That is, the burnishing device includes: lower fixed disk, on an internal surface by polishing pad configuration；Support member, by semiconductor crystal wafer etc.
Handled object is supported on the polishing pad of lower fixed disk；Upper fixed disk, on an internal surface by polishing pad configuration, and to semiconductor crystal wafer
Equal handled objects apply defined pressure；Polishing slurries feed unit.
Next, being illustrated to the other embodiment of polishing pad of the invention.Although involved by above embodiment
And polishing pad 1 in, foaming portion 14 is exposed from the whole surface of polishing portion 11, and polishing portion 11 do not have surface it is unexpanded
Layer 13, but replace, it can also be in the following way, that is, foaming portion 14 is exposed from the local surfaces in polishing portion 11,
On surface in addition to this, it is formed with the unexpanded layer 13 in surface.
In addition, though the section of protrusion is have a generally triangular shape in above-mentioned groove portion formation mold component, still,
As long as the form of protrusion to its shape and is not limited, replaces, such as is also possible to trapezoidal equal quadrangles or five sides
The polygons such as shape, substantially half elliptic, substantially semi-circular etc..
Industrial utilizability
Since polishing pad of the invention has the discharge characteristic of excellent polishing performance and polishing slurries, Ke Yiyong
In extensive field, for example, being used in the polishing field of disk and semiconductor crystal wafer that the smooth mirror surface for requiring height is processed
It is worth very high.
Symbol description
1 polishing pad；10 burnishing surfaces；11 polishing portion；12 groove portions；The unexpanded layer in 13 surfaces；14 foaming portions；15 foamed resins.
Claims (6)
1. a kind of polishing pad has polishing portion and groove portion on burnishing surface, wherein
The surface of the groove portion has unexpanded portion, and the surface of the polishing portion, which is exposed, foaming portion.
2. polishing pad as described in claim 1, wherein the maximum height roughness (Rz) on the surface of the groove portion be 10 μm~
30 μm, the maximum height roughness (Rz) on the surface of the polishing portion is 30 μm~100 μm.
3. polishing pad as claimed in claim 1 or 2, wherein
The arithmetic average roughness (Ra) on the surface of the groove portion is 0.1 μm~10 μm, and the arithmetic on the surface of the polishing portion is flat
Equal roughness (Ra) is 10 μm~45 μm.
4. polishing pad as claimed any one in claims 1 to 3, wherein
(the maximum height roughness (Rz) on the surface of the polishing portion)-(maximum height roughness on the surface of the groove portion
(Rz)) value is 20 μm~70 μm.
5. polishing pad according to any one of claims 1 to 4, wherein
(arithmetic average roughness (Ra) on the surface of the polishing portion)-(arithmetic average roughness on the surface of the groove portion
(Ra)) value is 5 μm~35 μm.
6. the polishing pad as described in any one of claims 1 to 5, with foamed resin, the foamed resin has
Three-dimensional bubble structure, and be made of thermoplastic resin, the thermoplastic resin is selected from by polyphenylene sulfide, poly- terephthaldehyde
At least one of the group of sour glycol ester resin and polycarbonate resin composition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017070780 | 2017-03-31 | ||
| JP2017-070780 | 2017-03-31 | ||
| PCT/JP2018/012483 WO2018181347A1 (en) | 2017-03-31 | 2018-03-27 | Polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109153107A true CN109153107A (en) | 2019-01-04 |
Family
ID=63676386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880001838.9A Pending CN109153107A (en) | 2017-03-31 | 2018-03-27 | Polishing pad |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200039023A1 (en) |
| JP (1) | JPWO2018181347A1 (en) |
| KR (1) | KR102285674B1 (en) |
| CN (1) | CN109153107A (en) |
| TW (1) | TWI673136B (en) |
| WO (1) | WO2018181347A1 (en) |
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| JP2000349053A (en) * | 1999-06-07 | 2000-12-15 | Asahi Chem Ind Co Ltd | Polishing pad with groove |
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- 2018-03-27 KR KR1020197028274A patent/KR102285674B1/en active IP Right Grant
- 2018-03-27 WO PCT/JP2018/012483 patent/WO2018181347A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI673136B (en) | 2019-10-01 |
| JPWO2018181347A1 (en) | 2020-03-05 |
| WO2018181347A1 (en) | 2018-10-04 |
| US20200039023A1 (en) | 2020-02-06 |
| KR20190122756A (en) | 2019-10-30 |
| KR102285674B1 (en) | 2021-08-04 |
| TW201836766A (en) | 2018-10-16 |
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