CN109148542B - QLED display substrate, manufacturing method thereof and QLED display device - Google Patents

QLED display substrate, manufacturing method thereof and QLED display device Download PDF

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Publication number
CN109148542B
CN109148542B CN201811003514.7A CN201811003514A CN109148542B CN 109148542 B CN109148542 B CN 109148542B CN 201811003514 A CN201811003514 A CN 201811003514A CN 109148542 B CN109148542 B CN 109148542B
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layer
electrode
qled
nanostructure
substrate
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CN109148542A (en
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禹钢
孙拓
陈卓
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention discloses a QLED display substrate, a manufacturing method thereof and a QLED display device, wherein the QLED display substrate comprises: the QLED device layer comprises a substrate base plate and a QLED device layer arranged on the substrate base plate, wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and used as an electron transmission layer; wherein the nanostructure layer is used for generating an electrical signal under the action of pressure. According to the embodiment of the invention, the nanostructure layer capable of realizing the functions of the electronic transmission layer and the touch/deformation induction is arranged, and the function of realizing the touch/deformation induction is integrated in the QLED display substrate, so that the volume occupied by the QLED display substrate is reduced, and the requirement for lightening and thinning the QLED display device is met.

Description

QLED display substrate, manufacturing method thereof and QLED display device
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a QLED display substrate, a manufacturing method thereof and a QLED display device.
Background
The quantum dot is a semiconductor nanocrystal which can be processed by solution, has the advantages of narrow light-emitting spectrum, adjustable light-emitting wavelength, high spectral purity and the like, and is expected to become a core part of a next-generation light-emitting device. Quantum Dot Light Emitting Diodes (QLEDs) are manufactured by using Quantum dots as a material for manufacturing a Light Emitting layer, and the Light Emitting layer is introduced between different conductive materials to obtain Light with a required wavelength. The QLED has the advantages of high color gamut, self-luminescence, low starting voltage, high response speed, long service life and the like.
The inventor researches and discovers that when the existing QLED display equipment realizes the touch feedback function, a sensor capable of realizing touch feedback needs to be arranged, so that the occupied volume of the QLED display equipment is large, and the requirement for lightening and thinning the QLED display equipment cannot be met.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention provide a QLED display substrate, a method for manufacturing the same, and a QLED display device, which can reduce the occupied volume of a QLED display device and meet the requirement for lightening and thinning the QLED display device.
In a first aspect, an embodiment of the present invention provides a QLED display substrate, including: the QLED device comprises a substrate base plate and a QLED device layer arranged on the substrate base plate, wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and used as an electron transmission layer;
wherein the nanostructure layer is used for generating an electrical signal under the action of pressure.
Optionally, the nanostructure layer comprises: nano structures which are arranged in an array and have consistent orientation;
the nano-structure manufacturing material comprises: zinc oxide;
the morphology of the nanostructures includes: nanowires, nanorods, nanocones, or hollow nanospheres.
Optionally, the second electrode is disposed on a side of the first electrode away from or close to the substrate;
the QLED device layer further comprises: the light-emitting diode comprises a hole injection layer, a hole transport layer and a quantum dot light-emitting layer;
the quantum dot light-emitting layer is arranged on one side, close to the first electrode, of the nanostructure layer;
the hole transport layer is arranged on one side of the quantum dot light-emitting layer close to the first electrode;
the hole injection layer is arranged on one side of the hole transport layer close to the first electrode.
Optionally, the QLED device layer further comprises: an energy level transition layer;
the energy level transition layer is arranged between the nanostructure layer and the quantum dot light-emitting layer;
the lowest occupied orbital LUMO energy level of the host material of the energy level transition layer is between the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer and the lowest occupied orbital LUMO energy level of the host material of the quantum dot light emitting layer;
the energy level transition layer includes: 0-dimensional magnesium zinc oxide nanoparticles.
Optionally, the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer gradually increases or decreases along the quantum dot light emitting layer to the second electrode.
Optionally, the nanostructures are doped with at least one of magnesium, lithium, aluminum, scandium, yttrium, lanthanum, cerium, or ytterbium;
the length of the nano structure along the direction vertical to the substrate base plate is 50-500 nanometers.
Optionally, the QLED device layer further comprises: a plurality of elastic structures disposed in a same layer as the nanostructure layer;
the elastic structure is disposed between adjacent nanostructures.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a QLED display substrate, including:
providing a substrate base plate;
forming a QLED device layer on a substrate;
wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and is used as an electron transmission layer; the nanostructure layer is used for generating an electrical signal under the action of pressure.
Optionally, the forming the QLED device layer on the substrate includes:
forming a first electrode on a substrate;
forming a nanostructure layer on a substrate by a deposition process;
transferring the nanostructure layer onto a first electrode by using a nanoimprint assisted vertical transfer process;
forming a second electrode on the nanostructure layer;
or forming a second electrode on the substrate base plate;
forming a nanostructure layer on a substrate by a deposition process;
transferring the nanostructure layer onto a second electrode by using a nanoimprint assisted vertical transfer process;
a first electrode is formed on the nanostructure layer.
In a third aspect, an embodiment of the present invention further provides a QLED display device, including: the QLED display substrate.
The embodiment of the invention provides a QLED display substrate, a manufacturing method thereof and a QLED display device, wherein the QLED display substrate comprises: the QLED device layer comprises a substrate base plate and a QLED device layer arranged on the substrate base plate, wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and used as an electron transmission layer; wherein the nanostructure layer is used for generating an electrical signal under the action of pressure. According to the embodiment of the invention, the nanostructure layer capable of realizing the functions of the electronic transmission layer and the touch/deformation induction is arranged, and the function of realizing the touch/deformation induction is integrated in the QLED display substrate, so that the volume occupied by the QLED display substrate is reduced, and the requirement for lightening and thinning the QLED display device is met.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a first schematic structural diagram of a QLED display substrate according to an embodiment of the present invention;
fig. 2 is a first schematic structural diagram of a QLED device layer according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of the post-touch QLED device layer provided in fig. 2;
fig. 4 is a schematic structural diagram ii of a QLED device layer according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram three of a QLED device layer provided in the embodiment of the present invention;
fig. 6 is a schematic structural diagram of a QLED device layer provided in the embodiment of the present invention;
FIG. 7 is a first schematic diagram of a pixel circuit;
FIG. 8 is a second schematic diagram of the pixel circuit;
FIG. 9A is a first equivalent circuit diagram of the pixel circuit;
FIG. 9B is a second equivalent circuit diagram of the pixel circuit;
FIG. 10A is a third equivalent circuit diagram of the pixel circuit;
FIG. 10B is a diagram of an equivalent circuit of the pixel circuit;
FIG. 11 is a first timing diagram illustrating operation of the pixel circuit;
FIG. 12 is a second timing diagram illustrating the operation of the pixel circuit;
fig. 13 is a flowchart of a method for manufacturing a QLED display substrate according to an embodiment of the present invention;
fig. 14A is a first schematic view illustrating a manufacturing method of a QLED display substrate according to an embodiment of the present invention;
fig. 14B is a second schematic diagram illustrating a manufacturing method of a QLED display substrate according to an embodiment of the present invention;
fig. 14C is a third schematic view of a method for manufacturing a QLED display substrate according to an embodiment of the present invention;
fig. 14D is a fourth schematic view of a manufacturing method of the QLED display substrate according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Unless defined otherwise, technical or scientific terms used in the disclosure of the embodiments of the present invention should have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. The use of "first," "second," and similar language in the embodiments of the present invention does not denote any order, quantity, or importance, but rather the terms "first," "second," and similar language are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Example one
Fig. 1 is a schematic structural diagram of a QLED display substrate according to an embodiment of the present invention, as shown in fig. 1, the QLED display substrate according to the embodiment of the present invention includes: the substrate base plate 10, set up the QLED device layer on the substrate base plate 10, the QLED device layer includes: the organic electroluminescent device comprises a first electrode 21, a second electrode 22 and a nanostructure layer 23 which is arranged between the first electrode 21 and the second electrode 22 and is used as an electron transmission layer, wherein the nanostructure layer 23 is used for generating an electric signal under the action of pressure.
In particular, the nanostructure layer 23 is used to generate an electrical signal under the action of pressure, that is, the nanostructure layer 23 has a piezoelectric effect. That is to say, in the embodiment of the present invention, the nanostructure layer 23 not only can be used as an electron transport layer to achieve the light emitting performance of the QLED display substrate, but also has a piezoelectric effect, and can achieve touch/deformation sensing.
Alternatively, the substrate base plate 10 may be a rigid substrate or a flexible substrate, wherein the rigid substrate may be, but is not limited to, one or more of glass, metal sheet; the flexible substrate may be, but is not limited to, one or more of polyethylene terephthalate, ethylene terephthalate, polyetheretherketone, polystyrene, polycarbonate, polyarylate, polyimide, polyvinyl chloride, polyethylene, textile fibers.
Specifically, the QLED display substrate further includes: a thin film transistor (not shown) disposed on the base substrate 10, wherein the thin film transistor includes: the active layer, the gate electrode, the source and drain electrodes, the interlayer insulating layer and the QLED device layer are connected with the drain electrode of the thin film transistor.
Alternatively, the first electrode 21 is an anode and the second electrode 22 is a cathode.
Optionally, the first electrode 21 is made of a transparent conductive material, specifically, the transparent conductive material includes: one or more of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, and aluminum-doped zinc oxide, which are not limited in this embodiment of the present invention.
Alternatively, the second electrode 22 may be made of one or more of, but not limited to, various conductive carbon materials, conductive metal oxide materials, and metal materials; the conductive carbon may be, but is not limited to, at least one of doped or undoped carbon nanotubes, doped or undoped graphene oxide, graphite, carbon fibers, and porous carbon; the conductive metal oxide material can be, but is not limited to, at least one of fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide; the metal material may be, but is not limited to, at least one of aluminum, silver, copper, molybdenum, gold.
Preferably, the second electrode 22 is made of silver or aluminum.
Optionally, the QLED display substrate in the embodiment of the present invention may be a forward structure, and may also be a reverse structure, which is not limited in this embodiment of the present invention, where when the second electrode is disposed on a side of the first electrode away from the substrate, the QLED display substrate is in the forward structure, and when the second electrode is disposed on a side of the first electrode close to the substrate, the QLED display substrate is in the reverse structure, and fig. 1 illustrates the QLED display substrate as the forward structure.
Specifically, the QLED device layer in the embodiment of the present invention may be partially encapsulated, fully encapsulated, or not encapsulated, which is not limited in this respect.
The QLED display substrate provided by the embodiment of the invention comprises: the QLED device layer comprises a substrate base plate and a QLED device layer arranged on the substrate base plate, wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and used as an electron transmission layer; wherein the nanostructure layer is used for generating an electrical signal under the action of pressure. According to the embodiment of the invention, the nanostructure layer capable of realizing the functions of the electronic transmission layer and the touch/deformation induction is arranged, and the function of realizing the touch/deformation induction is integrated in the QLED display substrate, so that the volume occupied by the QLED display substrate is reduced, and the requirement for lightening and thinning the QLED display device is met.
Optionally, fig. 2 is a first schematic structural diagram of a QLED device layer provided in an embodiment of the present invention, and fig. 3 is a schematic structural diagram of the QLED device layer after touch control provided in fig. 2, as shown in fig. 2 and 3, the nanostructure layer in the QLED display substrate provided in an embodiment of the present invention includes: the nano-structures 230 are arranged in an array and are uniformly oriented.
Specifically, the material for fabricating the nanostructure 230 includes: and (3) zinc oxide. The nanostructure may include only zinc oxide, and may further include other materials besides zinc oxide, which is not limited in this respect in this embodiment of the present invention.
Optionally, the length of the nanostructures 230 in the direction perpendicular to the substrate base is 50-500 nm.
The form of the nanostructure can be, but is not limited to, a nanowire, a nanorod, a nanocone or a hollow nanosphere.
Optionally, in order to adjust the work function and the electron transport performance of the nanostructure layer, the nanostructure 230 may be doped with at least one of magnesium, lithium, aluminum, scandium, yttrium, lanthanum, cerium, or ytterbium, which is not limited in this embodiment of the invention.
Alternatively, the second electrode is disposed on a side of the first electrode away from or close to the substrate, and fig. 1 illustrates an example in which the second electrode is disposed on a side of the first electrode away from the substrate.
Optionally, fig. 4 is a schematic structural diagram of a QLED device layer provided in the embodiment of the present invention, and as shown in fig. 4, the QLED device layer further includes: a hole injection layer 24, a hole transport layer 25, and a quantum dot light emitting layer 26.
Specifically, the quantum dot light-emitting layer 26 is disposed on one side of the nanostructure layer 23 close to the first electrode 21; the hole transport layer 25 is arranged on one side of the quantum dot light-emitting layer 26 close to the first electrode 21; the hole injection layer 24 is provided on the side of the hole transport layer 25 close to the first electrode 21.
Optionally, the hole injection layer 24 includes: poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate PEDOT: PSS, which is not limited in any way by the examples of the present invention.
Alternatively, the hole transport layer 25 includes: organic semiconducting materials of mature application, for example: polyvinylcarbazole PVK, and the like, which are not intended to limit the scope of the present invention.
Alternatively, the quantum dots in the quantum dot light emitting layer 26 may be selected from one or more of doped or undoped II-V group compound semiconductors, III-V group compound semiconductors, IV-VI group compound semiconductors, and core-shell structures thereof. The quantum dots can be selected from one or more of doped or undoped inorganic perovskite type semiconductors and organic-inorganic hybrid perovskite type semiconductors. Specifically, the structure of the inorganic perovskite type semiconductor is AMX at the same time3Wherein A is Cs+The ion, M is a divalent metal cation, and may be, but is not limited to, Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Fe2+X is a halogen anion, which may be but is not limited to Cl-、Br-、I-One of (1), organic-inorganic hybrid perovskiteThe structure of the ore type semiconductor is BMX at the same time3Wherein B is an organic amine cation which may be, but is not limited to, CH3(CH2)n-2NH3 +Or NH3 +(CH2)n NH3 2+M is a divalent metal cation which may be, but is not limited to, Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Fe2+X is a halogen anion, which may be but is not limited to Cl-、Br-、I-One kind of (1).
Optionally, when the difference between the energy levels of the quantum dot light emitting layer and the nanostructure layer is greater than 0.5 ev, that is, the LUMO energy levels of the nanostructure layer and the quantum dot light emitting layer are not matched, as an implementation, fig. 5 is a schematic structural diagram three of a QLED device layer provided in an embodiment of the present invention, and as shown in fig. 5, the QLED device layer provided in the embodiment of the present invention further includes: and an energy level transition layer 27.
Specifically, the energy level transition layer 27 is disposed between the nanostructure layer 23 and the quantum dot light emitting layer 26; wherein the lowest occupied orbital LUMO energy level of the host material of the energy level transition layer 27 is between the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer 23 and the lowest occupied orbital LUMO energy level of the host material of the quantum dot light emitting layer 26.
Optionally, the material for making the energy level transition layer comprises: 0-dimensional magnesium zinc oxide nanoparticles.
In addition, it should be noted that when the LUMO energy level of the nanostructure layer is matched with the LUMO energy level of the quantum dot light emitting layer, the QLED device layer provided in the embodiment of the present invention may not include an energy level transition layer, and specifically, whether the energy level transition layer is arranged in the QLED device layer or not needs to be determined according to actual requirements, which is not limited in this embodiment of the present invention.
Alternatively, when the difference between the energy levels of the quantum dot light emitting layer and the nanostructure layer is greater than 0.5 electron volts, i.e., the LUMO energy levels of the nanostructure layer and the quantum dot light emitting layer are not matched, as another embodiment, the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer gradually increases or decreases along the quantum dot light emitting layer to the second electrode direction.
The LUMO energy level of the host material of the quantum dot light-emitting layer is larger than that of the host material of the second electrode, the LUMO energy level of the host material of the nanostructure layer gradually decreases along the direction from the quantum dot light-emitting layer to the second electrode, and conversely, the LUMO energy level of the host material of the nanostructure layer gradually increases along the direction from the quantum dot light-emitting layer to the second electrode.
Specifically, the gradual change of the main material of the nanostructure layer can be controlled by controlling the precursor condition of the nanostructure layer.
Optionally, the predecessor conditions include: deposition temperature, oxygen pressurization, etc., which are not limited in any way by the embodiments of the present invention.
Optionally, in order to ensure that the elasticity of the nanostructure layer meets the required range of the pressure and the deformation can be well recovered after the touch pressure, fig. 6 is a fourth schematic structural diagram of the QLED device layer provided in the embodiment of the present invention, as shown in fig. 6, the QLED device layer in the embodiment of the present invention further includes: a plurality of resilient structures 28 disposed in a layer with the nanostructure layer 23.
In particular, each elastic structure 28 is disposed between adjacent nanostructures 230.
The number of the elastic structures 28 is determined according to actual requirements, and the embodiment of the present invention is not limited in this respect.
Further, the QLED display substrate further includes: the QLED device layer provided in the embodiment of the present invention can also realize a touch/deformation sensing function, so that a driving signal for driving the QLED device layer to emit light and a signal for sensing touch/deformation need to be separately set in the pixel circuit in the QLED display substrate. Specifically, fig. 7 is a first schematic structural diagram of a pixel circuit, and as shown in fig. 7, the pixel circuit in the embodiment of the present invention includes: a write sub-circuit, a drive sub-circuit, and a read sub-circuit.
Specifically, the write-in sub-circuit is respectively connected to the Data signal terminal Data, the first Scan terminal Scan1 and the first node N1, and is configured to write a signal of the Data signal terminal Data into the first node N1 under the control of the first Scan terminal Scan 1; a driving sub-circuit respectively connected to the first node N1, the second node N2 and the first power supply terminal V1, for supplying a driving current to the second node N2 under the control of the first node N1 and the first power supply terminal V1; and the reading sub-circuit is respectively connected with the second node N2, the second Scan terminal Scan2 and the reading signal terminal Readout, and is used for providing a signal of the second node N2 to the reading signal terminal Readout under the control of the second Scan terminal Scan 2.
Specifically, as shown in fig. 7, the light emitting element is connected to the second node N2 and the second power source terminal V2, respectively, for emitting light under the control of the second node N2 or supplying an electric signal to the second node N2 under the pressure.
Alternatively, first power supply terminal V1 is the high-level power supply terminal and second power supply terminal V2 is the low-level power supply terminal, or first power supply terminal V1 is the low-level power supply terminal and second power supply terminal V2 is the high-level power supply terminal.
Specifically, the light emitting element is a QLED.
Optionally, in order to further separate the driving signal for driving the QLED device layer to emit light and the signal for sensing touch/deformation, fig. 8 is a structural schematic diagram of a pixel circuit, wherein the driving sub-circuit in the pixel circuit is further connected to the third Scan terminal Scan3, and is configured to provide a driving current to the second node N2 under the control of the third Scan terminal Scan 3.
When the first power supply terminal V1 is a high-level power supply terminal and the second power supply terminal V2 is a low-level power supply terminal, the anode of the QLED is connected to the second node N2, and the cathode of the QLED is connected to the second power supply terminal V2, at this time, the pixel circuit is a pixel circuit corresponding to the QLED display substrate having the forward structure; when the first power source terminal V1 is a low power source terminal and the second power source terminal V2 is a high power source terminal, the anode of the QLED is connected to the second power source terminal V2, and the cathode of the QLED is connected to the second node N2, and at this time, the pixel circuit is a pixel circuit corresponding to the QLED display substrate having an inverted structure.
Fig. 9A is a first equivalent circuit diagram of the pixel circuit, fig. 9B is a second equivalent circuit diagram of the pixel circuit, fig. 10A is a third equivalent circuit diagram of the pixel circuit, fig. 10B is a fourth equivalent circuit diagram of the pixel circuit, wherein the first power terminal is a high-level power terminal VDD, the second power terminal is a low-level power terminal VSS in fig. 9A and 9B, that is, fig. 9A and 9B are equivalent circuit diagrams of the pixel circuit corresponding to the QLED display substrate having the forward structure, the first power terminal is a low-level power terminal VSS in fig. 10A and 10B, and the second power terminal is a high-level power terminal VDD, that is, fig. 10A and 10B are equivalent circuit diagrams of the pixel circuit corresponding to the QLED display substrate having the reverse structure.
Specifically, as shown in fig. 9A, 9B, 10A, and 10B, the write sub-circuit includes: the first switching transistor M1, the read sub-circuit includes: and a second switching transistor M2.
Specifically, the control electrode of the first switching transistor M1 is connected to the first Scan terminal Scan1, the first electrode thereof is connected to the Data signal terminal Data, and the second electrode thereof is connected to the first node N1. A control electrode of the second switching transistor M2 is connected to the second Scan terminal Scan2, a first electrode thereof is connected to the second node N2, and a second electrode thereof is connected to the read signal terminal Readout.
Alternatively, as shown in fig. 9A and 10A, as an embodiment, the driving sub-circuit includes: a capacitor C and a drive transistor DTFT.
Specifically, a first end of the capacitor C is connected to the first node N1, and a second end thereof is connected to the first power supply terminal; the control electrode of the driving transistor DTFT is connected to the first node N1, the first electrode thereof is connected to the first power source terminal, and the second electrode thereof is connected to the second node N2.
Alternatively, as shown in fig. 9B and 10B, as another embodiment, the driving sub-circuit includes a capacitor C, a driving transistor DTFT, and a third switching transistor M3.
Specifically, a first end of the capacitor C is connected to the first node N1, and a second end thereof is connected to the first power supply terminal; a control electrode of the driving transistor DTFT is connected to the first node N1, a first electrode thereof is connected to the first power source terminal, and a second electrode thereof is connected to the first electrode of the third switching transistor M3; a control electrode of the third switching transistor M3 is connected to the third Scan terminal Scan3, and a second electrode thereof is connected to the second node N2.
It will be understood by those skilled in the art that the switching transistors and the driving transistors employed in all embodiments of the present application may be thin film transistors or field effect transistors or other devices having the same characteristics. Preferably, the thin film transistor used in the embodiment of the present invention may be an oxide semiconductor transistor. Since the source and drain of the switching transistor used here are symmetrical, the source and drain can be interchanged. In the embodiment of the present invention, the control electrode is a gate, and in order to separate two electrodes except for the gate of the switching transistor, one of the electrodes is referred to as a first electrode, the other electrode is referred to as a second electrode, the first electrode may be a source or a drain, and the second electrode may be a drain or a source.
Specifically, the switching transistors M1 to M3 may be N-type thin film transistors or P-type thin film transistors, so that the process flow can be unified, the process procedures can be reduced, and the yield of the product can be improved. In addition, in view of the small leakage current of the low temperature polysilicon thin film transistor, in the embodiment of the present invention, it is preferable that all the transistors are low temperature polysilicon thin film transistors, and the thin film transistor may specifically be a thin film transistor with a bottom gate structure or a thin film transistor with a top gate structure as long as a switching function can be implemented.
The capacitor C may be a liquid crystal capacitor formed by the pixel electrode and the common electrode, or may be an equivalent capacitor formed by a liquid crystal capacitor formed by the pixel electrode and the common electrode and a storage capacitor, which is not limited in the present invention.
The working process of the pixel circuit is further described below by taking the pixel circuit corresponding to the QLED display substrate with the forward structure and the switching transistors are all N-type transistors as an example.
Taking the switching transistors M1-M3 in the pixel circuit as an example, all being N-type thin film transistors, fig. 11 is a first operation timing diagram of the pixel circuit, as shown in fig. 9A and 11, the pixel circuit includes: 2 switching transistors (M1 to M2), 1 driving transistor (DTFT), 1 capacitor unit (C), 3 signal input terminals (Data, Scan1 and Scan2), 1 signal output terminal (Readout), and 2 power supply terminals (VDD and VSS).
Specifically, since the pixel circuit is a circuit corresponding to the QLED display substrate having the forward structure, the first power source terminal is the high-level signal terminal VDD and continuously provides a high-level signal, and the second power source terminal is the low-level power source terminal VSS and continuously provides a low-level signal.
A lighting phase comprising: first stage T1 and second stage T2, in particular:
in the first period T1, the input signal of the first Scan terminal Scan1 is at a high level, the first switching transistor M1 is turned on, the input signal of the Data signal terminal Data is written into the first node N1, the driving transistor DTFT is turned on, the driving current is supplied to the QLED, and the QLED emits light.
In this stage, the Data signal terminal Data of the input terminal and the input signal of the first Scan terminal Scan1 are at high level, and the input signal of the second Scan terminal Scan2 is at low level.
In the second stage T2, the input signal of the first Scan terminal Scan1 is at a low level, the first switching transistor M1 is turned off, the voltage level of the first node N1 continuously increases under the bootstrap action of the capacitor C, the driving transistor DTFT is still in an on state, the driving current is continuously supplied to the QLED, and the QLED emits light.
In this stage, the Data signal terminal Data of the input terminal, the input signals of the first Scan terminal Scan1 and the second Scan terminal Scan2 are all at low level.
At this stage, the input signal of the second Scan terminal Scan2 is always at a low level, the second switching transistor M2 is always turned off, and feedback is provided after the pressure is not sensed.
Touch control stage
The input signal of the second Scan terminal Scan2 is at a high level, the second switching transistor M2 is turned on, the QLED provides an electrical signal to the second node N2 under the action of the voltage, and the read signal terminal Readout reads the signal of the second node N2, so as to realize touch sensing.
In this stage, the input signal of the second Scan terminal Scan2 at the input terminal is at a high level, and the input signals of the Data signal terminal Data and the first Scan terminal Scan1 at the input terminal are at a low level.
It should be noted that, during the touch stage, the QLED does not emit light.
Taking the switching transistors M1-M3 in the pixel circuit as an example, all are N-type thin film transistors, and fig. 12 is an operation timing diagram of the pixel circuit as a second, as shown in fig. 10A and 12, the pixel circuit includes: 3 switching transistors (M1 to M3), 1 driving transistor (DTFT), 1 capacitor unit (C), 4 signal input terminals (Data, Scan1, Scan2 and Scan3), 1 signal output terminal (Readout) and 2 power supply terminals (VDD and VSS).
A lighting phase comprising: first stage T1 and second stage T2, in particular:
in the first stage T1, the input signal of the first Scan terminal Scan1 is at a high level, the first switching transistor M1 is turned on, the input signal of the Data signal terminal Data is written onto the first node N1, the driving transistor DTFT is turned on, and since the input signal of the third Scan terminal Scan3 is at a low level, the third switching transistor M3 is turned off, the driving transistor DTFT cannot supply a driving current to the QLED, and the QLED does not emit light.
In this stage, the input signals of the Data signal terminal Data, the first Scan terminal Scan1, and the third Scan terminal Scan3 at the input terminal are at a high level, and the input signal of the second Scan terminal Scan2 is at a low level.
In the second stage T2, the input signal of the first Scan terminal Scan1 is at a low level, the first switching transistor M1 is turned off, the voltage level of the first node N1 continuously increases under the bootstrap action of the capacitor C, the driving transistor DTFT is still in an on state, and since the input signal of the third Scan terminal Scan3 is at a high level, the third switching transistor M2 is turned on, and the driving current is continuously supplied to the QLED, so that the QLED emits light.
In this stage, the Data signal terminal Data of the input terminal, the input signals of the first Scan terminal Scan1 and the second Scan terminal Scan2 are all at low level, and the input signal of the third Scan terminal Scan3 is at high level.
At this stage, the input signal of the second Scan terminal Scan2 is always at a low level, the second switching transistor M2 is always turned off, and feedback is provided after the pressure is not sensed.
Touch control stage
The input signal of the second Scan terminal Scan2 is at a high level, the second switching transistor M2 is turned on, the QLED provides an electrical signal to the second node N2 under the action of the voltage, and the read signal terminal Readout reads the signal of the second node N2, so as to realize touch sensing.
In this stage, the input signal of the second Scan terminal Scan2 at the input terminal is at a high level, and the input signals of the Data signal terminal Data, the first Scan terminal Scan1, and the third Scan terminal Scan3 at the input terminal are at a low level.
It should be noted that, during the touch stage, the QLED does not emit light.
Specifically, the working principle of the pixel circuit corresponding to the QLED display substrate with the reverse structure is the same as that of the pixel circuit corresponding to the QLED display substrate with the forward structure, and the details of the embodiments of the present invention are not repeated herein.
Example two
Based on the inventive concept of the foregoing embodiment, an embodiment of the present invention further provides a method for manufacturing a QLED display substrate, fig. 13 is a flowchart of the method for manufacturing the QLED display substrate according to the embodiment of the present invention, and as shown in fig. 13, the method for manufacturing the QLED display substrate according to the embodiment of the present invention specifically includes the following steps:
step 100, a substrate is provided.
Alternatively, the substrate base plate may be a rigid substrate or a flexible substrate, wherein the rigid substrate may be, but is not limited to, one or more of glass, metal sheet; the flexible substrate may be, but is not limited to, one or more of polyethylene terephthalate, ethylene terephthalate, polyetheretherketone, polystyrene, polycarbonate, polyarylate, polyimide, polyvinyl chloride, polyethylene, textile fibers.
Step 200, forming a QLED device layer on the substrate base plate.
Wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and is used as an electron transmission layer; the nanostructure layer is used for generating an electrical signal under the action of pressure.
Optionally, the first electrode is an anode and the second electrode is a cathode.
Optionally, the first electrode is made of a transparent conductive material, and specifically, the transparent conductive material includes: one or more of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, and aluminum-doped zinc oxide, which are not limited in this embodiment of the present invention.
Alternatively, the second electrode can be made of one or more of, but not limited to, various conductive carbon materials, conductive metal oxide materials and metal materials; the conductive carbon may be, but is not limited to, at least one of doped or undoped carbon nanotubes, doped or undoped graphene oxide, graphite, carbon fibers, and porous carbon; the conductive metal oxide material can be, but is not limited to, at least one of fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide; the metal material may be, but is not limited to, at least one of aluminum, silver, copper, molybdenum, gold.
The manufacturing method of the QLED display substrate provided by the embodiment of the invention comprises the following steps: providing a substrate, and forming a QLED device layer on the substrate, wherein the QLED device layer comprises: the nano-structure layer is arranged between the first electrode and the second electrode and used as an electron transmission layer; wherein the nanostructure layer is used for generating an electrical signal under the action of pressure. According to the embodiment of the invention, the nanostructure layer capable of realizing the functions of the electronic transmission layer and the touch/deformation induction is arranged, and the function of realizing the touch/deformation induction is integrated in the QLED display substrate, so that the volume occupied by the QLED display substrate is reduced, and the requirement for lightening and thinning the QLED display device is met.
Optionally, as an implementation, the step 200 includes: forming a first electrode on a substrate; forming a nanostructure layer on a substrate; transferring the nanostructure layer onto a first electrode by using a nanoimprint assisted vertical transfer process; a second electrode is formed on the nanostructure layer.
After the first electrode is formed on the substrate, the method for manufacturing the QLED display substrate according to the embodiment of the present invention further includes: and a hole injection layer, a hole transport layer and a quantum dot light emitting layer are sequentially formed on the first electrode. Transferring the nanostructure layer onto the first electrode using a nanoimprint assisted vertical transfer process includes: and transferring the nanostructure layer onto the quantum dot light-emitting layer by using a nanoimprint assisted vertical transfer process.
In this embodiment, a QLED display substrate having a forward structure is formed.
Optionally, as another embodiment, step 200 includes: forming a second electrode on the substrate base plate; forming a nanostructure layer on a substrate; transferring the nanostructure layer onto a second electrode by using a nanoimprint assisted vertical transfer process; a first electrode is formed on the nanostructure layer.
Forming a first electrode on the nanostructure layer includes: and a quantum dot light-emitting layer, a hole transport layer and a hole injection layer are sequentially formed on the nanostructure layer.
In this embodiment, a QLED display substrate having an inverted structure is formed.
Optionally, the substrate is made of gallium nitride.
Specifically, the nanostructure layer is formed by processes such as chemical vapor deposition, vapor transport deposition, pulsed laser deposition or a solution method.
Specifically, the method for preparing each layer except the nanostructure layer according to the present invention may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to: one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition and coprecipitation; the physical method comprises the following steps: but are not limited to, one or more of spin coating, printing, doctor blading, dipping, spraying, casting, slot coating, bar coating, thermal evaporation, e-beam evaporation, magnetron sputtering, physical vapor deposition, atomic layer deposition, pulsed laser deposition, vacuum evaporation, and ink jet printing.
Optionally, as an implementation manner, the method for manufacturing a QLED display substrate provided in the embodiment of the present invention further includes: and forming an energy level transition layer on one side of the nanostructure layer far away from the second electrode.
Optionally, as another implementation manner, the forming of the nanostructure layer according to the embodiment of the present invention includes: and adopting different precursor conditions to ensure that the LUMO energy level of the nanostructure in the nanostructure layer gradually changes along the direction from the quantum dot light-emitting layer to the second electrode.
Optionally, the predecessor conditions include: deposition temperature, oxygen pressurization, etc., which are not limited in any way by the embodiments of the present invention.
Optionally, in order to ensure that the elasticity of the nanostructure layer meets the required range of pressure, and the deformation of the nanostructure layer can be well recovered after the touch pressure, the method for manufacturing the QLED display substrate provided in the embodiment of the present invention further includes: a plurality of elastic structures are disposed between adjacent nanostructures.
The following further describes a method for manufacturing a QLED display substrate according to an embodiment of the present invention, with reference to fig. 14A to 14D, taking a QLED display substrate with a forward structure as an example.
Step 310, providing a substrate 10, and sequentially forming a first electrode 21, a hole injection layer 24, a hole transport layer 25, and a quantum dot light emitting layer 26 on the substrate 10, as shown in fig. 14A.
Step 320, forming a nanostructure layer 23 on the substrate 20, as shown in fig. 14B.
Step 330, using a nanoimprint assisted vertical transfer process to transfer the nanostructure layer 23 onto the quantum dot light-emitting layer 26, as shown in fig. 14C.
Step 340, forming a second electrode 22 on the nanostructure layer 23, as shown in fig. 14D.
EXAMPLE III
Based on the inventive concept of the above embodiments, an embodiment of the present invention further provides a QLED display device, including: QLED display substrate.
The QLED display substrate is similar to the QLED display substrate provided in the first embodiment, and the implementation principle and the implementation effect thereof are not described herein again.
Specifically, the QLED display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
The drawings of the embodiments of the invention only relate to the structures related to the embodiments of the invention, and other structures can refer to common designs.
In the drawings used to describe embodiments of the invention, the thickness and dimensions of layers or microstructures are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
Without conflict, features of embodiments of the present invention, that is, embodiments, may be combined with each other to arrive at new embodiments.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A QLED display substrate, comprising: the QLED device comprises a substrate base plate and a QLED device layer arranged on the substrate base plate, wherein the QLED device layer comprises: the quantum dot light-emitting diode comprises a first electrode, a second electrode, a quantum dot light-emitting layer, an energy level transition layer and a nanostructure layer, wherein the nanostructure layer is arranged between the first electrode and the second electrode and is used as an electron transmission layer; the quantum dot light-emitting layer is arranged on one side, close to the first electrode, of the nanostructure layer, and the energy level transition layer is arranged between the nanostructure layer and the quantum dot light-emitting layer; the lowest occupied orbital LUMO energy level of the host material of the energy level transition layer is between the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer and the lowest occupied orbital LUMO energy level of the host material of the quantum dot light emitting layer;
wherein the nanostructure layer is used for generating an electrical signal under the action of pressure.
2. A QLED display substrate according to claim 1, wherein the nanostructure layer comprises: nano structures which are arranged in an array and have consistent orientation;
the nano-structure manufacturing material comprises: zinc oxide;
the morphology of the nanostructures includes: nanowires, nanorods, nanocones, or hollow nanospheres.
3. A QLED display substrate according to claim 1, wherein the second electrode is provided on a side of the first electrode remote from or close to the substrate;
the QLED device layer further comprises: a hole injection layer and a hole transport layer;
the hole transport layer is arranged on one side of the quantum dot light-emitting layer close to the first electrode;
the hole injection layer is arranged on one side of the hole transport layer close to the first electrode.
4. A QLED display substrate of claim 3,
the material for manufacturing the energy level transition layer comprises: magnesium zinc oxide nanoparticles.
5. A QLED display substrate according to claim 1, wherein the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer gradually increases or decreases along the quantum dot light emitting layer towards the second electrode.
6. A QLED display substrate according to claim 2, wherein the nanostructures are doped with at least one of magnesium, lithium, aluminium, scandium, yttrium, lanthanum, cerium or ytterbium;
the length of the nano structure along the direction vertical to the substrate base plate is 50-500 nanometers.
7. A QLED display substrate of claim 2, wherein the QLED device layer further comprises: a plurality of elastic structures disposed in a same layer as the nanostructure layer;
the elastic structure is disposed between adjacent nanostructures.
8. A manufacturing method of a QLED display substrate is characterized by comprising the following steps:
providing a substrate base plate;
forming a QLED device layer on a substrate;
wherein the QLED device layer comprises: the quantum dot light-emitting diode comprises a first electrode, a second electrode, a quantum dot light-emitting layer, an energy level transition layer and a nanostructure layer, wherein the nanostructure layer is arranged between the first electrode and the second electrode and is used as an electron transmission layer; the quantum dot light-emitting layer is arranged on one side, close to the first electrode, of the nanostructure layer, and the energy level transition layer is arranged between the nanostructure layer and the quantum dot light-emitting layer; the lowest occupied orbital LUMO energy level of the host material of the energy level transition layer is between the lowest occupied orbital LUMO energy level of the host material of the nanostructure layer and the lowest occupied orbital LUMO energy level of the host material of the quantum dot light emitting layer; the nanostructure layer is used for generating an electrical signal under the action of pressure.
9. The method of claim 8, wherein forming a QLED device layer on a substrate base plate comprises:
forming a first electrode on a substrate;
forming a nanostructure layer on a substrate by a deposition process;
transferring the nanostructure layer onto a first electrode by using a nanoimprint assisted vertical transfer process;
forming a second electrode on the nanostructure layer;
or forming a second electrode on the substrate base plate;
forming a nanostructure layer on a substrate by a deposition process;
transferring the nanostructure layer onto a second electrode by using a nanoimprint assisted vertical transfer process;
a first electrode is formed on the nanostructure layer.
10. A QLED display device, comprising: the QLED display substrate of any of claims 1 to 7.
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