CN109148268A - The manufacturing method of gallium nitride base board - Google Patents
The manufacturing method of gallium nitride base board Download PDFInfo
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- CN109148268A CN109148268A CN201811110281.0A CN201811110281A CN109148268A CN 109148268 A CN109148268 A CN 109148268A CN 201811110281 A CN201811110281 A CN 201811110281A CN 109148268 A CN109148268 A CN 109148268A
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- gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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Abstract
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of gallium nitride base board.A kind of manufacturing method of gallium nitride base board, includes the following steps, monocrystal substrate surface portion overlay film, implements crystalline growth process at the non-overlay film position of non-film covering and is allowed to overlay film, and gradually operates back and forth.Remarkable result of the invention is: the manufacture of thick film GaN crystallization may be implemented in the GaN substrate manufacturing process advocated by using the invention.And it can be realized the manufacture of the substantially internal gallium nitride base board without containing dislocation.If will be applied in the constituent material of power semiconductor module according to GaN substrate made from the manufacturing process advocated in the present invention, because dislocation is not present, so not having the generation of electrical leakage problems, the misgivings of insulation, pressure-resistant reduced performance are not had, practical effect will be very excellent.
Description
Technical field
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of gallium nitride base board, the gallium nitride base board can be with
For the luminous original part such as optical diode, laser diode；Electric semiconductor mould in the devices such as commercial motor, electric car
Block is used as electrical power conversion element.
Background technique
The thick film growth of previous GaN crystallization is all implemented in accordance with the following methods: the first shape on GaAs (GaAs) substrate
At nitride buffer layer.Hydride gas phase epitaxial growth method (HVPE) or Organometallic are recycled on the basis of the buffer layer
Object chemical vapor infiltration (MOCVD) is closed to be manufactured.In the substrate using to substance have: GaAs, sapphire, carbonization
Silicon (SiC, also known as diamond dust), silicon (Si) etc..
Fig. 3 is the sectional view of the manufacturing process of previous GaN.As shown in Fig. 3 (1)~(4).
In Fig. 3 (1): carrying out coating processing with entire surface of the covering material to GaAs substrate 11 and (pass through physical vapor deposition
The methods of realize).Overlay film 12 and window 13 have been configured by photoetching.
(2) use HVPE preparation method in Fig. 3, form thickness in the reaction environment that temperature is 450 degrees Celsius~500 degrees Celsius
For the GaN buffer thin film layer 14. of tens nanometer to 100nm or so
(3) use HVPE preparation method in Fig. 3, in the reaction environment that temperature is 800 degrees Celsius~1050 degrees Celsius, are formed
GaN crystallizing layer 15.Buffer layer 14 at this time can also crystallize.
GaAs substrate 11 is immersed to etch in chloroazotic acid and be removed by (4) in Fig. 3.Overlay film part is removed by grinding base plate.In this way,
One piece of GaN crystalline substrate, which just manufactures, to be completed.
It publishes in Japanese patent application, open number is 2000-12900.
But as described above, the GaN crystallization on GaAs substrate is during thick film growth, substrate and GaN
The lattice constant and thermal expansion coefficient of crystallization are not consistent, and which results in the interfaces of GaN and substrate to generate sizable deformation,
The fracture of GaN lattice is eventually led to, so that large substrate can not be made.Or can only obtain crystal defect density it is very big (1 ×
109cm-2~1 × 1010cm-2) substrate.
Because crystal defect original part operate when as it is non-luminescent in conjunction with center, also can become electric current channel, institute
To be likely to become the arch-criminal of electric leakage, if the material to be used for the manufacture of light emitting diode or power semiconductor module,
It is likely to result in being greatly lowered for original part performance.
Summary of the invention
The present invention in view of the drawbacks of the prior art, provides a kind of manufacturing method of gallium nitride base board.
The present invention is implemented as follows: a kind of manufacturing method of gallium nitride base board, includes the following steps, monocrystal substrate surface
Part overlay film implements crystalline growth process at the non-overlay film position of non-film covering and is allowed to overlay film, and gradually grasps back and forth
Make.
A kind of manufacturing method of gallium nitride base board as described above, wherein the overlay film is configured at gallium nitride surface
The surface of defect.
A kind of manufacturing method of gallium nitride base board as described above, wherein in the gallium nitride crystal growth process,
Hydride gas phase epitaxial growth method (HVPE) and metallo-organic compound chemical vapor infiltration are applied in manufacturing method
One or both of (MOCVD).
Remarkable result of the invention is: thick film may be implemented in the GaN substrate manufacturing process advocated by using the invention
The manufacture of GaN crystallization.And it can be realized the manufacture of the substantially internal gallium nitride base board without containing dislocation.If will be according to this law
GaN substrate made from the manufacturing process of bright middle promotion is applied in the constituent material of power semiconductor module, because not depositing
In dislocation, so not having the generation of electrical leakage problems, the misgivings of insulation, pressure-resistant reduced performance are not had, practical effect will
It is very excellent.
Detailed description of the invention
Fig. 1 is the schematic diagram (cross-section diagram) of the upward transfer pattern of threading dislocation in first step in the present invention.
Fig. 2 is the schematic diagram (section of the upward transfer pattern of the threading dislocation in the second step involved in the present invention
Figure).
Fig. 3 is the schematic diagram (cross-section diagram) of previous GaN manufacturing process.
In figure: 1. monocrystal substrates, 2. first coating layers, 22. first non-coating layers, 3. first gallium nitride layers, 4. second are covered
Film layer, 23. second non-coating layers, 5. second gallium nitride layers, 6. threading dislocation lines, 11. GaAs substrates, 12. overlay films, 13. windows
Mouth, 14. nitride buffer layers, 15. gallium nitride layers, 16. gallium nitride crystal substrates.
Specific embodiment
Use for reference the method described in the above subject, the manufacturing method of the GaN substrate in the present invention are as follows: monocrystal substrate surface element
Divide overlay film, implements crystalline growth process at the non-overlay film position of non-film covering and be allowed to overlay film, and gradually operate back and forth.
As the manufacturing method of the GaN substrate of feature.
Specifically, the feature of the manufacturing method is described as follows: covering upper one layer of table on a part of surface of monocrystal substrate
Face cannot grow the first layer overlay film of crystallization.In next first procedure, allow GaN crystallization in the non-overlay film part of first layer
Growth, until its thickness can cover first layer overlay film.Then (second operation work starts), in first layer gallium nitride crystal layer
Surface cover upper layer of surface and cannot grow the second layer overlay film of crystallization, covering position is the surface of crystal defect.Not
The non-overlay film position of the second layer covered by second layer overlay film allows gallium nitride crystal in the non-overlay film some growth of the second layer, until
Its thickness can cover second layer overlay film.And so on, gradually back and forth by the above process.As the GaN substrate of feature
Manufacturing method.
In the present invention, the crystal face of the hexagonal crystals such as gallium nitride is indicated using four indexes (hkil).Work as index
When for negative, minus sign is used before exponential number.In addition to the labeling method of negative index, with usual exponential representation side
Subject to method.
Caused by threading dislocation, crystal defect are the stress generated as crystallization distortion.Threading dislocation, crystallization in crystallization
Defect has plenty of from the succession of the substrate of lower lining, and some is generated in grown layer, is grown in knot along with crystallization
It is shifted upwards on the thickness direction of crystal layer.Even if threading dislocation, crystal defect problem still remain, as long as stress can be alleviated, just
It can be to avoid the generation shifted upwards.
Below, implementation form of the invention is illustrated.Fig. 1 be the threading dislocation in first step of the invention to
The schematic diagram (cross-section diagram) of upper transfering state.Threading dislocation line 6 is illustrated in figure in non-22 region of overlay film position, self-reference substrate 1
The pattern that shifts upwards of surface.The surface of substrate 1 is covered by 2 part of the first coating layer.With the first non-22nd area of overlay film position
Domain is starting point, and the first gallium nitride layer 3 is transferred to the surface of the first gallium nitride layer 3 from the threading dislocation line 6 that lower lining substrate is inherited.
Fig. 2, in the second step of the invention, the upward transfer condition of threading dislocation is as shown in the drawing.By the first nitridation
Gallium layer 3 is regarded as the second laminar substrate, illustrates the growth pattern that the second gallium nitride layer 5 is covered on the second coating layer 4.With first
Non- 22 region of overlay film position is starting point, and the threading dislocation line 6 inherited from lower lining substrate has been arranged to the formation of the second coating layer 4
When the top of surface defect that generates, so will not continue to inherit to the second gallium nitride layer 5.23 be the second non-overlay film position.
The equipping rules of overlay film are as follows: because the crystal growth rate characteristic of GaN crystallization horizontally is " compared with GaN layer
The speed of growth on the direction<1-100>, the speed of growth of the GaN layer on the direction<11-20>is faster." so best maximum limit
Degree ground carries out overlay film configuration using this characteristic.
Constituent material about overlay film, it is desired to which the surface of selected materials has the characteristic that cannot grow crystallization.Such as: silicon
(Si), the oxide or nitride of the elements such as titanium (Ti), tantalum (Ta), zirconium (Zr).Namely such as silica (SiO2), nitridation
Silicon (SiN), silicon oxynitride (SiON), titanium dioxide (TiO2), tantalum oxide (TaO), the amorphisms chemical combination such as zirconium oxide (ZrO)
Object.In addition, the multilayer composite of this kind of material can also be selected.
About coating layer 2 and the formation mode of coating layer 4, there is no specific limitations.Can be clathrate, striated,
Dotted, quadrangle, polygon, circle etc..
As shown in Figures 1 and 2, in the present invention, on the monocrystal substrate 1 covered by 2 part of the first coating layer, first
GaN layer 3 after crystalline growth via forming.At this time, GaN crystallization is only using non-22 region of overlay film position of monocrystal substrate 1 as starting point
Start to grow.That is, the direct contact site of the first GaN layer 3 and substrate 1 is the first non-overlay film position 22, and is only limitted to
This.If further growth, it will be fully filled with the first non-22 region of overlay film position, it then will be swollen on the first coating layer 2
Swollen spilling.If continuing further growth at this time, gallium nitride crystal can not only will be grown in a thickness direction, while be mentioned above
The side that position is overflowed in the expansion arrived can also become the starting point of new crystalline growth, and crystallization starts towards cross growth.It is final and
Other are converged using the crystallization that non-overlay film position is grown as starting point, to complete all standing on the first coating layer 2, are then crystallized
Start to continue to grow in a thickness direction, forms the first gallium nitride layer 3.In the table for the first gallium nitride layer 3 for having grown completion
On face as in process one, continue to configure identical second coating layer 4, which is back and forth repeated as many times, this can be made
Invent the desired GaN substrate being possessed of good qualities.
Several specific examples are given below
Embodiment 1
On 2 inches diameter, 400 μm of thickness of sapphire substrate, a thickness is grown on surface by using mocvd method
Degree is the A1N buffer layer of 20nm.It then continues to growth and obtains the GaN film layer of 1.5 μ m thicks, monocrystal substrate is made.In the list
On brilliant substrate, SiO is used2As covering material, SiO is obtained with vacuum evaporating legal system2Film.After photoetching and etching, line is obtained
It is 100 μm wide, the lattice-shaped pattern that 200 μm of spacing, using this as the first coating layer.That is concrete shape are as follows: first non-covers
Film position is 100 μm of side length of square grid, and the spacing between grid and grid is also 100 μm.Using this as new substrate,
And the first n-type GaN layer with a thickness of 100 μm is grown using HVPE method.And coating layer has been completely covered, insertion is internal.
To which the first GaN layer that diameter is 2 inches be made.
SiO is continued to use on the surface of first GaN layer2As covering material, SiO is obtained with vacuum evaporating legal system2It is thin
Film.After photoetching and etching, obtain 100 μm of line width, between 200 μm of distance of lattice-shaped pattern.Remaining coating layer it will make at this time
For the second coating layer.And the overlay film pattern should configure obtained in the previous procedure, observe the defective position in surface
Surface.
Then, crystalline growth is allowed with HVPE method, obtain the second n-type gallium nitride layer with a thickness of 450 μm.By GaN obtained
Crystalline substrate takes the result obtained after evaluation and test under penetrating type electron microscope are as follows: dislocation density is 1 × 104cm-2~1 ×
105cm-2, quality of finished is high.
Embodiment 2
On the silicon carbide substrate (0001) that crystal structure is 6H type, constructing a layer thickness with plasma CVD method is
150nm, covering material select SiO2SiO2Film.Extending part is 10 μm of diameter of circle, is divided into 100 μ between exposed portion
M, using the shape of this dotted arrangement as coating layer.That is the shape of overlay film are as follows: round extending part is at 100 μm of side length
Square quadrangle on, and using square four vertex as the center of circle, according to said method arrange made of shape.By this film coated plate
The gallium nitride layer with a thickness of 100 μm is grown as substrate, and using HVPE method.And coating layer has been completely covered, insertion
It is internal.To which the GaN substrate that diameter is 2 inches be made.
On the surface of the GaN substrate also with vacuum vapour deposition, SiO is selected2SiO is made as covering material2Film
Layer.Continue to continue to use the overlay film pattern treatment method that upper section text is mentioned and obtains the second coating layer.The substrate is loaded into HVPE dress
In setting, start the growth process for carrying out the second GaN layer.Finally obtain the GaN substrate with a thickness of 400 μm.
Claims (3)
1. a kind of manufacturing method of gallium nitride base board, it is characterised in that: include the following steps, monocrystal substrate surface portion overlay film,
Implement crystalline growth process at the non-overlay film position of non-film covering and be allowed to overlay film, and gradually operates back and forth.
2. a kind of manufacturing method of gallium nitride base board as described in claim 1, it is characterised in that: the overlay film to be configured at
The surface of gallium nitride surface defect.
3. a kind of manufacturing method of gallium nitride base board as claimed in claim 2, it is characterised in that: the gallium nitride crystal at
In long process, hydride gas phase epitaxial growth method (HVPE) and metallo-organic compound chemical gaseous phase are applied in manufacturing method
One or both of precipitation method (MOCVD).
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205556A (en) * | 1997-03-25 | 1999-01-20 | 三菱电线工业株式会社 | Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| CN101336314A (en) * | 2005-12-15 | 2008-12-31 | 卢米洛格股份有限公司 | Process for growth of low dislocation density gan |
| CN101432471A (en) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | Method for manufacturing gallium nitride crystal and gallium nitride wafer |
| CN101866831A (en) * | 2009-04-20 | 2010-10-20 | 武东星 | Epitaxial substrate with low surface defect density and manufacturing method thereof |
| CN203445143U (en) * | 2013-05-20 | 2014-02-19 | 南通同方半导体有限公司 | Light-emitting diode structure for reducing defect density of blue light LED |
-
2018
- 2018-09-21 CN CN201811110281.0A patent/CN109148268A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205556A (en) * | 1997-03-25 | 1999-01-20 | 三菱电线工业株式会社 | Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| CN101336314A (en) * | 2005-12-15 | 2008-12-31 | 卢米洛格股份有限公司 | Process for growth of low dislocation density gan |
| CN101432471A (en) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | Method for manufacturing gallium nitride crystal and gallium nitride wafer |
| CN101866831A (en) * | 2009-04-20 | 2010-10-20 | 武东星 | Epitaxial substrate with low surface defect density and manufacturing method thereof |
| CN203445143U (en) * | 2013-05-20 | 2014-02-19 | 南通同方半导体有限公司 | Light-emitting diode structure for reducing defect density of blue light LED |
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Effective date of registration: 20190701 Address after: 214000 No. 11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Wuxi Wuyue Semiconductor Co.,Ltd. Address before: 214101 Shengli Xincun 61-7 201, Binhu District, Wuxi City, Jiangsu Province Applicant before: Zhang Haitao |
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