CN109143621A - Quadrature quadrature modulator and preparation method thereof based on LiNbO_3 film - Google Patents
Quadrature quadrature modulator and preparation method thereof based on LiNbO_3 film Download PDFInfo
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- CN109143621A CN109143621A CN201811204697.9A CN201811204697A CN109143621A CN 109143621 A CN109143621 A CN 109143621A CN 201811204697 A CN201811204697 A CN 201811204697A CN 109143621 A CN109143621 A CN 109143621A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Ceramic Engineering (AREA)
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- General Physics & Mathematics (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of quadrature quadrature modulators based on lithium niobate, including substrate, LiNbO_3 film, lithium niobate fiber waveguide, 1 × 2 optical beam-splitter, MZ Mach-Zehnder, 90 ° of bias structures；The LiNbO_3 film is bonded on substrate, and the lithium niobate fiber waveguide, 1 × 2 optical beam-splitter, MZ Mach-Zehnder, 90 ° of bias structures are arranged on LiNbO_3 film；The light beam separates two light beams by 1 × 2 optical beam-splitter, two light beams pass through different MZ Mach-Zehnders respectively, MZ Mach-Zehnder output end exports two light beams, wherein a light beam exports after entering 90 ° of bias structures, another light beam is for detecting output.The present invention has low-power consumption, miniaturization, low driving voltage, the order phase of high bandwidth and intensity modulated device.The present invention is suitable for optical signal modulations field.
Description
Technical field
The present invention relates to a kind of optical modulator fields, more particularly to a kind of same phase based on LiNbO_3 film is just
The preparation method of quadrature modulator and the quadrature quadrature modulator.
Background technique
Quadrature quadrature modulator has very important effect in modern communications field.Its structure is by two parallel horses
He Zengde tune that device processed and 90 ° of phase bias devices composition, in the same direction and orthogonal two groups of signals are mutually orthogonal, and phase can be achieved at the same time
Position and intensity modulated.
With the development of silicon-based electro-optic integrated technology, I/Q modulator has been applied on silicon based photon platform, and real
The signal modulation of high speed Orthogonal phase-shift keying (PSK) and 16 rank of dual-polarization and the orthogonal intensity modulated of 32 ranks is showed.
Silicon-based electro-optical modulator is mainly carrier transport, carrier injection, carrier accumulation effect.Wherein, modulator
Bandwidth and linear degree carrier transport mechanism it is optimal, but since optical field distribution is Chong Die with the heterogeneity for transporting area, cause
The effect introduces nonlinear second-order distortion and third order intermodulation distortion item.In recent years, silicon substrate is controlled by dopant concentration, or with
The hybrid integrated chip that III-V multiple quantum wells combines has and realizes low driving voltage successively, and high bandwidth, the Mach of high linearity was once
Moral tune that device processed.But in frequency applications, microwave is lost in silicon materials and significantly increases, to limit bandwidth.
Dual-polarization IQ modulator based on InP has the characteristics that low driving voltage and high bandwidth, small in size, can be with
Laser, high speed detector hybrid integrated.But its electrooptic effect refraction index changing amount of III-V includes linear term and nonlinear terms,
The small linear term of electric field accounts for leading, and the electric field second-order effects that becomes larger is prominent.
Lithium niobate obtains in commercial high-speed phase and intensity modulator with linear electro-optic effect outstanding
It is widely applied.Traditional commercial lithium niobate modulator forms weak limitation wave using titanium diffusion technique in lithium niobate body material
It leads, mould spot area causes the electrode spacing of both sides wider up to tens microns, about 30 um or more of representative value；Volume is big, that is, seals
About 135 mm of mm × 13.5 after dress is applied to optical fiber transmission network.With LiNbO_3 film cutting and bonding technology at
It is ripe, in recent years, extensive concern of the research of LiNbO_3 film modulator by academia and industry.Mature lithium niobate at present
Film thickness can be directly or indirectly bonded in silicon, silica, quartz and Sapphire Substrate from hundred nano-scale to micron order.
Since its refractive index is higher than silica (Δ n ~ 0.67), stronger optical mode field limitation in opposite conventional bulk can get.
It can get the mould spot area of submicron order by plasma etch process.Smaller optical mode field distribution is conducive to metal electrode can
It is closer to make, it is also beneficial to obtain the degree of overlapping of higher light field and electric field, can get small size, high modulate efficiency is low
The electrooptic modulator of power consumption.
In conclusion the high-frequency radio frequency loss for silicon-based modulator is big；The electrooptic effect linearity of III-V is insufficient；Mesh
The lithium niobate I/Q modulator figure of preceding commercialization is big, and high driving voltage is high, and I/Q modulator is applied on LiNbO_3 film, can get
Low-loss, miniaturization, low driving voltage, the order phase of high bandwidth and intensity modulated device.
Summary of the invention
Big, III-V electrooptic effect linearity deficiency is lost in order to solve the high-frequency radio frequency of silicon-based modulator in the present invention, with
And lithium niobate I/Q modulator figure commercial at present is big, the high problem of high driving voltage is provided based on the same of LiNbO_3 film
Phase quadrature modulator has the characteristics that low-power consumption, miniaturization, low driving voltage, high linearity.
To realize aforementioned present invention purpose, the technical solution adopted is as follows: a kind of inphase quadrature modulation based on lithium niobate
Device, including substrate, setting LiNbO_3 film on substrate, and prepare 1 × 2 optical beam-splitter A on LiNbO_3 film,
Two-way MZ Mach-Zehnder, 90 ° of bias structures, and prepare on LiNbO_3 film for transmitting the optical waveguide of light beam；1×
2 optical beam-splitter A are connect with the input terminal of two-way MZ Mach-Zehnder, the output end of two-way MZ Mach-Zehnder with
90 ° of bias structure connections.
It preferably, further include silica covering, the silica covering is covered on LiNbO_3 film；The dioxy
The thickness of SiClx covering is greater than 1 μm；Metal lead wire is provided on the silica covering, one end of metal lead wire passes through two
The windowing of silica clad is in communication with the outside, and the other end of MZ Mach-Zehnder, 90 ° of bias structures and metal lead wire connects
It connects.
Preferably, the MZ Mach-Zehnder includes 1 × 2 optical beam-splitter B, ground metallic electrode, signal metal
Electrode, 2 × 2 optical interference devices；The two sides of the signal metal electrode are disposed with ground metallic electrode, 1 × 2 optics point
Beam device B, 2 × 2 optical interference devices are respectively arranged at the both ends of signal metal electrode；The light beam passes sequentially through 1 × 2 optics point
It is divided into two light beams after beam device A, B, two light beams are worn between the ground metallic electrode and signal metal electrode of two sides respectively
Later, it is formed and is interfered in 2 × 2 optical interference devices, and export two light beams.
Preferably, 90 ° of bias structures include other metal electrode, Center metal electrode, optics bundling device；The center
Other metal electrode is respectively set in metal electrode two sides；Optics bundling device is set to one end of the Center metal electrode；It is described every
Road MZ Mach-Zehnder exports two light beams, wherein a light beam passes through between Center metal electrode and other metal electrode
Afterwards, it is exported by optics bundling device, another light beam is exported from other metal electrode far from the side of Center metal electrode；It is described to connect
Ground metal electrode, signal metal electrode, other metal electrode, Center metal electrode draw with the metal on the silica covering
Line connection.
Preferably, the width range of the optical waveguide is set as 0.8-1 μm；The thickness range of LiNbO_3 film is
300-700 nm。
Preferably, the substrate is silicon or quartz or sapphire.
Preferably, the ground metallic electrode, signal metal electrode, other metal electrode, Center metal electrode using gold or
Silver or aluminium；The metal thickness is 300-1000 nm.
The present invention also provides a kind of preparation method of quadrature quadrature modulator based on lithium niobate, the manufacturing method tool
Steps are as follows for body:
Step 1: on substrate directly or by bonding medium indirect linkage by LiNbO_3 film；
Step 2: electron beam adhesive being covered on LiNbO_3 film using the method for high speed spin coating；
Step 3: optical texture being transferred in electron beam adhesive using electron-beam exposure system；
Step 4: using electron beam adhesive as mask, in inductive coupling-plasma system, realizing dry method using etching gas
Lithium niobate is etched, optical texture is transferred on lithium niobate thin-film materials；
Step 5: electron beam adhesive being covered on substrate using the method for high speed spin coating on the substrate that the step 3 obtains；
Step 6: using electron beam evaporation plating system, evaporation metal adhesion layer and metal electrode；
Step 7: ultimately forming electricity structure using metal lift-off techniques.
Preferably, the etching gas is argon plasma or sulfur hexafluoride/argon gas mixed gas plasma；It is described
Metal electrode includes ground metallic electrode, signal metal electrode, other metal electrode, Center metal electrode；The optical texture packet
Include lithium niobate fiber waveguide, 1 × 2 optical beam-splitter A, B, 2 × 2 optical interference devices, optics bundling device.
Preferably, the metal electrode and metal lead wire are shelled by the metal of electron beam exposure polymethyl methacrylate glue
It realizes from technology or is realized by polymethyl methacrylate glue-removing glue bilayer glue metal lift-off techniques.
Beneficial effects of the present invention are as follows: the present invention utilizes lithium niobate linear electro-optic effect outstanding, variations in refractive index
It is in a linear relationship with electric field strength, apply electric field in any one lithium niobate fiber waveguide, phase difference will be generated in another,
Interference will be generated when closing beam, bestows opposite polarity voltage in two parallel lithium niobate fiber waveguides, modulation efficiency is double；This hair
The bright high-new manufacturing technology that is all made of makes structure of the invention reach micron, Nano grade, reaches miniaturization；The present invention uses resistivity
Characteristic of the low metal as metal electrode and its lithium niobate realizes low-power consumption, low driving voltage.
Detailed description of the invention
Fig. 1 is the perspective view of the quadrature quadrature modulator the present invention is based on lithium niobate.
Fig. 2 is the top view of the quadrature quadrature modulator the present invention is based on lithium niobate.
Fig. 3 is parallel Mach of the invention once moral tune that device schematic diagram processed.
Fig. 4 is 90 ° of bias structure schematic diagrames of the invention.
In figure；1. lithium niobate fiber waveguide, 2. 1 × 2 optical beam-splitter A, 3. ground metallic electrodes, 4. signal metal electrodes,
5. 2 × 2 optical interference devices, 6. side metal electrodes, 7. Center metal electrodes, 8. optics bundling devices, 9. substrates, 10.1 × 2 light
Learn beam splitter B.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and detailed description.
Embodiment 1
As shown in Figure 1 and Figure 2, a kind of quadrature quadrature modulator based on lithium niobate, including substrate, the niobic acid of setting on substrate
Lithium film, and prepare 1 × 2 optical beam-splitter A, two-way MZ Mach-Zehnder, 90 ° of bias junctions on LiNbO_3 film
Structure, and prepare on LiNbO_3 film for transmitting the optical waveguide of light beam；1 × 2 optical beam-splitter A and two-way mach zhender tune
The input terminal of device processed connects, and the output end of two-way MZ Mach-Zehnder is connect with 90 ° of bias structures.
It further include silica covering in the present embodiment, the silica covering is covered on LiNbO_3 film；It is described
Silica covering is greater than 1 μm；Metal lead wire is set on the silica covering, opens up window on silica covering
Mouthful, the connection of MZ Mach-Zehnder, 90 ° of bias structures and metal lead wire, to test and to encapsulate.
As shown in figure 3, MZ Mach-Zehnder described in the present embodiment includes 1 × 2 optical beam-splitter B, grounded metal
Electrode, signal metal electrode, 2 × 2 optical interference devices；The two sides of the signal metal electrode are disposed with grounded metal electricity
Pole, and form " ground metallic electrode-signal metal electrode-ground metallic electrode " structure, ground metallic electrode and signal metal
Electrode parallel arrangement, is equipped with the optical waveguide for being used for transmission light beam between ground metallic electrode and signal metal electrode.1 × 2 light
Beam splitter B, 2 × 2 optical interference devices are respectively arranged at the both ends of signal metal electrode, and the light beam passes sequentially through 1 × 2 light
Be divided into two light beams after learning beam splitter A, B, two light beams respectively from the ground metallic electrode and signal metal electrode of two sides it
Between pass through after, 2 × 2 optical interference devices formed interfere, and export two light beams.
Current embodiment require that two parallel MZ Mach-Zehnders, in conjunction with quadrature quadrature modulator is formed, two-way is simultaneously
Capable MZ Mach-Zehnder forms " ground metallic electrode-signal metal electrode-ground metallic electrode-signal metal electrode-
Ground metallic electrode " structure, including ground metallic electrode quantity are 3, and signal metal number of electrodes is 2；Each Mach was once
Two optical waveguides for being used for transmitting beam are equipped in Dare modulator, two optical waveguides can be isometric or non-isometric.
Single MZ Mach-Zehnder realizes intensity modulated, therefore is able to achieve on-off keying (OOK) and binary system phase
It moves keying (BPSK).Using lithium niobate as Mach once moral tune you the principle of device processed be: lithium niobate has linear electrooptic outstanding
Effect, variations in refractive index are in a linear relationship with electric field strength.Lead application electric field in any one two sides Zhi Guangbo, will with it is another
One generation phase difference will generate interference when closing beam.General " plug-type " structure is to bestow pole in two parallel optical waveguides
The opposite voltage of property, modulation efficiency are double.
As shown in figure 4,90 ° of bias structures described in the present embodiment include other metal electrode, Center metal electrode, optics is closed
Beam device；Other metal electrode is respectively set in the Center metal electrode two sides, sets between Center metal electrode and other metal electrode
The optical waveguide for being used for transmission light beam is set, two parallel optical waveguides are set in 90 ° of bias structures；Each mach zhender
Modulator exports two light beams, wherein after a light beam passes through between Center metal electrode and other metal electrode, by optics
Bundling device output, another light beam are exported from other metal electrode far from the side of Center metal electrode；The ground metallic electrode,
Signal metal electrode, other metal electrode, Center metal electrode are connect with the metal lead wire on the silica covering.
Two parallel Mach once passed through 90 ° of phase bias structures, two-way shape phase in 90 ° between your device processed of moral tune
Difference.The phase bias structure of 90 ° of phase bias structures uses " other metal electrode-Center metal electrode-side metal electrode "
Structure setting electrode structure makes two paths of signals generate 90 ° of phase differences.Therefore 45 °, 135 °, 225 ° and 315 ° four shapes can be realized
The quadrature phase shift keying (QPSK) of state.When input electrical signal there are when more level, it can be achieved that multilevel quadrature intensity modulated
(xQAM).
The optical waveguide width that light beam is used for transmission described in the present embodiment is set as 0.8-1 μm；LiNbO_3 film thickness
300-700 nm。
Substrate described in the present embodiment is silicon or quartz or sapphire, and the LiNbO_3 film can be directly or by bonding
Medium indirect linkage is on substrate.
Ground metallic electrode described in the present embodiment, signal metal electrode, other metal electrode, Center metal electrode are using electricity
The low metal of resistance rate, the metal are gold or silver or aluminium；The metal thickness is 300-1000 nm.
The present embodiment light beam is injected from the input terminal of optical waveguide, and by 1 × 2 optical beam-splitter A, light beam is divided into two light
Beam, this two light beams pass through two 1 × 2 optical beam-splitters B, 1 × 2 optical beam-splitter B respectively and the light beam come in are divided into two
Branch light beam projects, this two light beams are projected from the two sides of signal metal electrode respectively, and is formed and interfered in 2 × 2 optical interference devices,
And two light beams are exported, wherein a light beam passes through between Center metal electrode and other metal electrode from a wherein light beam
Afterwards, it is exported by optics bundling device, another light beam is exported from other metal electrode far from the side of Center metal electrode.
The present invention also provides a kind of preparation method of quadrature quadrature modulator based on LiNbO_3 film, the manufacturing methods
Specific step is as follows:
Step 1: on substrate directly or by bonding medium indirect linkage by LiNbO_3 film；
Step 2: electron beam adhesive being covered on LiNbO_3 film using the method for high speed spin coating；
Step 3: optical texture being transferred in electron beam adhesive using electron-beam exposure system；
Step 4: using electron beam adhesive as mask, in inductive coupling-plasma system, realizing dry method using etching gas
Lithium niobate is etched, optical texture is transferred on lithium niobate thin-film materials；
Step 5: electron beam adhesive being covered on substrate using the method for high speed spin coating on the substrate that the step 3) obtains；
Step 6: using electron beam evaporation plating system, evaporation metal adhesion layer and metal electrode；
Step 7: ultimately forming electricity structure using metal lift-off techniques；
Step 8: covering silica covering on LiNbO_3 film and metal electrode, metal is set on silica covering and is drawn
Line realizes the company of metal electrode and metal lead wire in silica covering uplifting window mouth by means such as dry or wet corrosion
It connects, completes manufacture.
In the present embodiment, the etching gas be argon plasma or sulfur hexafluoride/argon gas mixed gas plasma,
Lithium niobate etching depth is less than film thickness；The metal electrode includes ground metallic electrode, signal metal electrode, other metal electricity
Pole, Center metal electrode；The optical texture includes lithium niobate fiber waveguide, 1 × 2 optical beam-splitter A, B, 2 × 2 optical interference
Device, optics bundling device.
In the present embodiment, the metal electrode passes through the gold of electron beam exposure polymethyl methacrylate glue with metal lead wire
Belong to lift-off technology to realize or realize by polymethyl methacrylate glue-removing glue bilayer glue metal lift-off techniques.
In the present embodiment, optical texture can also first pass through electron beam adhesive and be transferred in hard mask, be then transferred to lithium niobate
On film, the hard mask is crome metal, nickel or nickel chromium triangle.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.Any modification done within the spirit and principles of the present invention and changes equivalent replacement
Into etc., it should all be included in the scope of protection of the claims of the present invention.
Claims (10)
1. a kind of quadrature quadrature modulator based on lithium niobate, it is characterised in that: including substrate, the lithium niobate of setting on substrate
Film, and prepare 1 × 2 optical beam-splitter A, two-way MZ Mach-Zehnder, 90 ° of bias junctions on LiNbO_3 film
Structure, and prepare on LiNbO_3 film for transmitting the optical waveguide of light beam；1 × 2 optical beam-splitter A and two-way mach zhender tune
The input terminal of device processed connects, and the output end of two-way MZ Mach-Zehnder is connect with 90 ° of bias structures.
2. the quadrature quadrature modulator according to claim 1 based on lithium niobate, it is characterised in that: further include silica
Covering, the silica covering are covered on LiNbO_3 film；The thickness of the silica covering is greater than 1 μm；Described
Metal lead wire is provided on silica covering, one end of metal lead wire is in communication with the outside by the windowing of silica covering,
The other end of MZ Mach-Zehnder, 90 ° of bias structures and metal lead wire connects.
3. the quadrature quadrature modulator according to claim 2 based on lithium niobate, it is characterised in that: the mach zhender
Modulator includes 1 × 2 optical beam-splitter B, ground metallic electrode, signal metal electrode, 2 × 2 optical interference devices；The signal gold
The two sides for belonging to electrode are disposed with ground metallic electrode, and 1 × 2 optical beam-splitter B, 2 × 2 optical interference devices are respectively arranged at
The both ends of signal metal electrode；The light beam is divided into two light beams, two light after passing sequentially through 1 × 2 optical beam-splitter A, B
Beam after passing through between the ground metallic electrode and signal metal electrode of two sides, forms in 2 × 2 optical interference devices and interferes respectively,
And export two light beams.
4. the quadrature quadrature modulator according to claim 3 based on lithium niobate, it is characterised in that: 90 ° of bias junctions
Structure includes other metal electrode, Center metal electrode, optics bundling device；Other metal electricity is respectively set in the Center metal electrode two sides
Pole；Optics bundling device is set to one end of the Center metal electrode；Every road MZ Mach-Zehnder exports two light
Beam, wherein being exported by optics bundling device, Ling Yizhi after a light beam passes through between Center metal electrode and other metal electrode
Light beam is exported from other metal electrode far from the side of Center metal electrode；The ground metallic electrode, signal metal electrode, other gold
Belong to electrode, Center metal electrode is connect with the metal lead wire on the silica covering.
5. described in any item quadrature quadrature modulators based on lithium niobate according to claim 1 ~ 4, it is characterised in that: the niobium
The width range of sour lithium optical waveguide is set as 0.8-1 μm；The thickness range of LiNbO_3 film is 300-700 nm.
6. the quadrature quadrature modulator according to claim 1 based on lithium niobate, it is characterised in that: the substrate be silicon or
Quartz or sapphire.
7. the quadrature quadrature modulator according to claim 3 or 4 based on lithium niobate, it is characterised in that: the ground connection gold
Belong to electrode, signal metal electrode, other metal electrode, Center metal electrode using gold or silver or aluminium；The metal thickness is 300-
1000 nm。
8. a kind of preparation method of the quadrature quadrature modulator based on lithium niobate, it is characterised in that: the manufacturing method specifically walks
It is rapid as follows:
Step 1: on substrate directly or by bonding medium indirect linkage by LiNbO_3 film；
Step 2: electron beam adhesive being covered on LiNbO_3 film using the method for high speed spin coating；
Step 3: optical texture being transferred in electron beam adhesive using electron-beam exposure system；
Step 4: using electron beam adhesive as mask, in inductive coupling-plasma system, realizing dry method using etching gas
Lithium niobate is etched, optical texture is transferred on lithium niobate thin-film materials；
Step 5: electron beam adhesive being covered on substrate using the method for high speed spin coating on the substrate that the step 3 obtains；
Step 6: using electron beam evaporation plating system, evaporation metal adhesion layer and metal electrode；
Step 7: ultimately forming electricity structure using metal lift-off techniques.
9. the preparation method of the quadrature quadrature modulator according to claim 8 based on lithium niobate, it is characterised in that: described
Etching gas is argon plasma or sulfur hexafluoride/argon gas mixed gas plasma；The metal electrode includes ground connection gold
Belong to electrode, signal metal electrode, other metal electrode, Center metal electrode；The optical texture includes lithium niobate fiber waveguide, 1 × 2
Optical beam-splitter A, B, 2 × 2 optical interference devices, optics bundling device.
10. the preparation method of the quadrature quadrature modulator according to claim 4 or 8 based on lithium niobate, it is characterised in that:
The metal electrode and metal lead wire are realized or are led to by the metal lift-off techniques of electron beam exposure polymethyl methacrylate glue
Cross the realization of polymethyl methacrylate glue-removing glue bilayer glue metal lift-off techniques.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811204697.9A CN109143621B (en) | 2018-10-16 | 2018-10-16 | Lithium niobate film-based in-phase quadrature modulator and preparation method thereof |
Applications Claiming Priority (1)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161625A (en) * | 2019-05-17 | 2019-08-23 | 上海交通大学 | The integrated method of silicon substrate LiNbO_3 film electrooptic modulator array |
| CN110286540A (en) * | 2019-06-25 | 2019-09-27 | 北京工业大学 | A kind of 1 × 4 lithium niobate waveguides photoswitch increasing Dare interference structure based on Mach |
| CN113671769A (en) * | 2020-05-15 | 2021-11-19 | 联合微电子中心有限责任公司 | Optical phased array based on phase shift control of lithium niobate thin film material and preparation method |
| WO2023065499A1 (en) * | 2021-10-22 | 2023-04-27 | 南开大学 | Electro-optic modulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130089340A1 (en) * | 2011-10-05 | 2013-04-11 | Nec Laboratories America, Inc. | High-speed optical 8-qam modulation by cascading dual-drive mach-zehnder modulator with i/q modulator |
| CN103873152A (en) * | 2012-12-18 | 2014-06-18 | 武汉邮电科学研究院 | Automatic bias voltage control system and method for light IQ modulator |
| CN104054311A (en) * | 2011-11-11 | 2014-09-17 | 吉高迅公司 | Dual Polarization Quadrature Modulator |
-
2018
- 2018-10-16 CN CN201811204697.9A patent/CN109143621B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130089340A1 (en) * | 2011-10-05 | 2013-04-11 | Nec Laboratories America, Inc. | High-speed optical 8-qam modulation by cascading dual-drive mach-zehnder modulator with i/q modulator |
| CN104054311A (en) * | 2011-11-11 | 2014-09-17 | 吉高迅公司 | Dual Polarization Quadrature Modulator |
| CN103873152A (en) * | 2012-12-18 | 2014-06-18 | 武汉邮电科学研究院 | Automatic bias voltage control system and method for light IQ modulator |
Non-Patent Citations (2)
| Title |
|---|
| CHENG WANG等: "Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages", 《NATURE》 * |
| PO DONG等: "Silicon In-Phase/Quadrature Modulator With On-Chip Optical Equalizer", 《JOURNAL OF LIGHTWAVE TECHNOLOGY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161625A (en) * | 2019-05-17 | 2019-08-23 | 上海交通大学 | The integrated method of silicon substrate LiNbO_3 film electrooptic modulator array |
| CN110286540A (en) * | 2019-06-25 | 2019-09-27 | 北京工业大学 | A kind of 1 × 4 lithium niobate waveguides photoswitch increasing Dare interference structure based on Mach |
| CN113671769A (en) * | 2020-05-15 | 2021-11-19 | 联合微电子中心有限责任公司 | Optical phased array based on phase shift control of lithium niobate thin film material and preparation method |
| WO2023065499A1 (en) * | 2021-10-22 | 2023-04-27 | 南开大学 | Electro-optic modulator |
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