CN109119365A - The preparation method of mask device and solar battery - Google Patents
The preparation method of mask device and solar battery Download PDFInfo
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- CN109119365A CN109119365A CN201811010346.4A CN201811010346A CN109119365A CN 109119365 A CN109119365 A CN 109119365A CN 201811010346 A CN201811010346 A CN 201811010346A CN 109119365 A CN109119365 A CN 109119365A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 5
- 239000013039 cover film Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 12
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000001915 proofreading effect Effects 0.000 abstract description 2
- 230000000295 complement effect Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to the preparation methods of a kind of mask device and solar battery.The mask device includes the first exposure mask piece, the second exposure mask piece and opening-closing structure.The first exposure mask piece has at least one first mask pattern.The second exposure mask piece has at least one second mask pattern.Each first mask pattern is identical with the shape of each the second mask pattern.The opening-closing structure is flexibly connected with the first exposure mask piece and the second exposure mask piece respectively.When the first exposure mask piece and the second exposure mask piece are closed, at least one described first mask pattern and at least one described second mask pattern are overlapped.The mask device can avoid proofreading using artificial detection and error in mask process, can realize two-sided exposure mask to the solar battery of large area, simply and easily prepare uniform solar battery.
Description
Technical field
This application involves field of photoelectric technology, more particularly to the preparation method of a kind of mask device and solar battery.
Background technique
Currently, various sizes of solar battery is widely used on the electronic equipments such as street lamp.Industrial production is too
The size of positive energy battery is larger, generally requires and substrate or film are cut or delineated using certain technique, cutting
Cut or scoring process in can use photoetching and masking process.It is existing to use double-sided alignment exposure technique, in substrate or too
The two-sided setting mask plate and exposure light source of positive energy solar panel, this Exposure mode use artificial detection, and error is larger, technique
Consistency is poor.When mask pattern is lesser, error can be very big, cannot prepare uniform solar battery.
Summary of the invention
Based on this, it is necessary to which for artificial detection is used, error is larger, and the consistency of technique is poor, cannot prepare
The problem of even solar battery, provides the preparation method of a kind of mask device and solar battery.
A kind of mask device, comprising:
First exposure mask piece has at least one first mask pattern；
Second exposure mask piece has at least one second mask pattern, each at least one described first mask pattern
The shape of the second mask pattern of each of a first mask pattern and at least one second mask pattern is identical；And
Opening-closing structure is flexibly connected with the first exposure mask piece and the second exposure mask piece respectively, to adjust described
Angle between one exposure mask piece and the second exposure mask piece, so that the first exposure mask piece and the second exposure mask piece closure
When, at least one described first mask pattern and at least one described second mask pattern are overlapped.
In one embodiment, the company of can be rotated of the opening-closing structure and the first exposure mask piece and the second exposure mask piece
It connects, the opening-closing structure makes the rotation of 0 ° -180 ° of the first exposure mask piece and the second exposure mask piece realization.
In one embodiment, the opening-closing structure is hinge, and the hinge includes two panels hinge fan, shaft and axle sleeve,
The two panels hinge fan is rotatably connected with the first exposure mask piece and the second exposure mask piece respectively, the shaft and the axis
Set realizes the hinged of the first exposure mask piece and the second exposure mask piece.
In one embodiment, the opening-closing structure is on connecting the first exposure mask piece and the second exposure mask piece direction
Length be 1 centimetre -10 centimetres.
In one embodiment, the first exposure mask piece is provided with the first location structure；
The second exposure mask piece is provided with the second location structure；
When first location structure and fixed second location structure cooperation, at least one described first exposure mask figure
Shape and at least one described second mask pattern are overlapped.
In one embodiment, first location structure is protrusion, and second location structure is groove, when described the
When one exposure mask piece is overlapped with the second exposure mask piece, the protrusion is fastened in the groove.
In one embodiment, first location structure is aperture, and second location structure is lock- receiving aperture, when described
When first exposure mask piece is overlapped with the second exposure mask piece, the lock- receiving aperture pass through the aperture, at the lock- receiving aperture padlock with
The fixed first exposure mask piece and the second exposure mask piece.
A kind of preparation method of solar battery, comprising the following steps:
Substrate is provided, and the substrate is located in mask device；Wherein, the mask device includes: the first exposure mask
Piece, the second exposure mask piece and opening-closing structure, the first exposure mask piece have at least one first mask pattern, the second exposure mask piece
With at least one the second mask pattern, the first mask pattern of each of at least one described first mask pattern and described
The shape of the second mask pattern of each of at least one second mask pattern is identical when the first exposure mask piece and described the
After substrate described in two exposure mask piece sandwicheds, each described first mask pattern is overlapped with second mask pattern, institute
Stating substrate has the first surface directly contacted with the first exposure mask piece and directly contact with the second exposure mask piece second
Surface；
The first intrinsic layer and the second intrinsic layer are deposited respectively in the first surface and the second surface；
The first doped layer and the second doped layer are deposited respectively on the surface of first intrinsic layer and second intrinsic layer；
The first transparency conducting layer and second is deposited respectively thoroughly on the surface of first doped layer and second doped layer
Bright conductive layer；
The first conductive electrode and second is distinguished on the surface of first transparency conducting layer and second transparency conducting layer
Conductive electrode.
In one embodiment, described to distinguish on the surface of first transparency conducting layer and second transparency conducting layer
Include: in the step of first conductive electrode and the second conductive electrode
The mask device is removed；
First conductive electrode is deposited on the surface of first transparency conducting layer；
Second conductive electrode is deposited on the surface of second transparency conducting layer.
In one embodiment, the first intrinsic layer and second are deposited respectively in the first surface and the second surface
Before the step of levying layer, further includes:
By after substrate described in sandwiched the first exposure mask piece and the second exposure mask piece far from the opening-closing structure
Edge is fixed.
The mask device provided in the embodiment of the present application includes the first exposure mask piece, the second exposure mask piece and opening-closing structure.
The first exposure mask piece has at least one first mask pattern.The second exposure mask piece has at least one second exposure mask figure
Shape.Each first mask pattern is identical with the shape of each the second mask pattern.The opening-closing structure is respectively with described
One exposure mask piece and the second exposure mask piece are flexibly connected.It is described when the first exposure mask piece and the second exposure mask piece are closed
At least one first mask pattern and at least one described second mask pattern are overlapped.The mask device can be in mask process
In avoid proofreading using artificial detection and error, two-sided exposure mask can be realized to the solar battery of large area, simply and easily
Prepare uniform solar battery.
Detailed description of the invention
Fig. 1 is the schematic diagram of the mask device provided in the application one embodiment；
Fig. 2 is the schematic diagram of the mask device provided in the application one embodiment；
Fig. 3 is the schematic diagram of the mask device provided in the application one embodiment；
Fig. 4 is the structural schematic diagram of the solar battery provided in the application one embodiment.
Drawing reference numeral explanation:
Mask device 100
First exposure mask piece 10
First mask pattern 11
First location structure 12
First complementary patterns area 13
Second exposure mask piece 20
Second mask pattern 21
Second location structure 22
Second complementary patterns area 23
Opening-closing structure 30
Solar battery 200
Substrate 101
First intrinsic layer 201
Second intrinsic layer 202
First doped layer 203
Second doped layer 204
First transparency conducting layer 301
Second transparency conducting layer 302
First conductive electrode 401
Second conductive electrode 402
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The preparation method of the application mask device and solar battery is further elaborated.It should be appreciated that tool described herein
Body embodiment is only used to explain the application, is not used to limit the application.
Referring to Fig. 1, providing a kind of mask device 100 in the application one embodiment includes the first exposure mask piece 10, the
Two exposure mask pieces 20 and opening-closing structure 30.The mask device 100 can realize two-sided exposure mask, letter to the solar battery of large area
List easily prepares various sizes of solar battery.
The first exposure mask piece 10 has at least one first mask pattern 11.The second exposure mask piece 20 has at least one
A second mask pattern 21.The specific material of the first exposure mask piece 10 and the second exposure mask piece 20 is not done specifically
It limits, can be made of the material of traditional mask plate.Each of at least one described first mask pattern 11 first is covered
The shape of second mask pattern 21 of each of film pattern 11 and at least one second mask pattern 21 is identical.Described
One mask pattern 11 and second mask pattern 21 can carry out selection design according to actual demand.For example, in a reality
It applies in example, first mask pattern 11 and second mask pattern 21 can be the rectangle of 10mm × 10mm, be also possible to
The rectangle of 10mm × 20mm, or can be the circular configuration that diameter is 10mm.The first exposure mask piece 10 and described second is covered
The specific size of diaphragm 20 can designed, designed according to actual needs, for example 100 can be designed in the first exposure mask piece 10
First mask pattern 11 of array arrangement.The spacing of first mask pattern 11 of adjacent two is 3mm-10mm.
The opening-closing structure 30 is flexibly connected with the first exposure mask piece 10 and the second exposure mask piece 20 respectively.It is described to open
Structure 30 is closed to adjust the angle between the first exposure mask piece 10 and the second exposure mask piece 20.In one embodiment,
Angle between the first exposure mask piece 10 and the second exposure mask piece 20 can be 0 ° to 360 ° and differ.When not needing technique
The angle between the first exposure mask piece 10 and the second exposure mask piece 20 can be set it is 360 ° and is stored.In technological preparation
In the process, the angle that can be set between the first exposure mask piece 10 and the second exposure mask piece 20 is 180 °.Start in technique
When, the angle that can be set between the first exposure mask piece 10 and the second exposure mask piece 20 is 0 °.The opening-closing structure 30 can
So that when the first exposure mask piece 10 and the second exposure mask piece 20 are closed, at least one described 11 He of the first mask pattern
At least one described second mask pattern 21 is overlapped.Specifically, the opening-closing structure 30 is connecting 10 He of the first exposure mask piece
Length on second exposure mask piece, 20 direction can be designed according to the thickness of the substrate of solar battery to be prepared.Than
Such as, the substrate of solar battery with a thickness of 130um-180um, length 156mm.The so described opening-closing structure 30 is in connection institute
Stating the length on the first exposure mask piece 10 and 20 direction of the second exposure mask piece can be 1mm-5mm.Preferably, the opening-closing structure
30 are connecting the length on the first exposure mask piece 10 and 20 direction of the second exposure mask piece as 3mm.The opening-closing structure 30
Thickness can be 100um-200um.Optionally, the thickness of the opening-closing structure 30 can be 120um-150um.Preferably, institute
The thickness for stating opening-closing structure 30 can be 130um.The opening-closing structure 30 selects suitable thickness, and described first can be made to cover
Diaphragm 10 and the second exposure mask piece 20 and the solar battery of large area can overlap directly, avoid and be stacked
The first exposure mask piece 10, large area solar battery and the second exposure mask piece 20 between there are gap, avoid made of
The edge of the solar battery of small area is with the presence of shade or slope.
In the present embodiment, the mask device 100 can disposably realize two-sided exposure mask.The mask device 100 can be with
Realize that two-sided mask pattern is the same.And it be can achieve into using the small area solar battery of the mask device 100 preparation
The effect of power 100%, transfer efficiency is obviously improved when preparing solar battery using the mask device 100.
In one embodiment, aligning parts can be set at the edge of the opening-closing structure 360.Such as described first
The edge setting edge aligning parts of exposure mask piece 10 and the second exposure mask piece 20 far from the opening-closing structure 30, can be alignment
Device.Since the first exposure mask piece 10 is identical with the area of the second exposure mask piece 20, first mask pattern 11 of setting
With the structure and shape of second mask pattern 21 also just as therefore when the first exposure mask piece 10 is far from the opening-closing structure
When 30 edge and the second exposure mask piece 20 are aligned far from the edge of the opening-closing structure 30, the first exposure mask piece 10 and institute
Stating the second exposure mask piece 20 can be aligned.
In the present embodiment, aligning parts is set at the edge of the opening-closing structure 30, the first exposure mask piece can be made
10 and the second exposure mask piece 20 quickly, be smoothly aligned, convenient for improving the preparation efficiency of preparation small area solar battery.
In one embodiment, the opening-closing structure 30 and the first exposure mask piece 10 and the second exposure mask piece 20 can
Rotation connection.For example, the opening-closing structure 30 can be the structure of shaft and two connection sheets.The opening-closing structure 30 makes institute
State the rotation of 0 ° -180 ° of the first exposure mask piece 10 and the second exposure mask piece 20 realization.In the technological preparation stage, first exposure mask
Angle between piece 10 and the second exposure mask piece 20 is 180 °, executes stage, the first exposure mask piece 10 and described in technique
Angle between second exposure mask piece 20 is 0 °.In the present embodiment, the opening-closing structure 30 makes the first exposure mask piece 10 and institute
State the rotation that the second exposure mask piece 20 realizes 0 ° -180 °, it is ensured that the service life of the mask device 100.
In one embodiment, the opening-closing structure 30 is hinge, and the hinge includes two panels hinge fan, shaft and axis
Set.The two panels hinge fan is rotatably connected with the first exposure mask piece 10 and the second exposure mask piece 20 respectively.The shaft
The hinged of the first exposure mask piece 10 and the second exposure mask piece 20 is realized with the axle sleeve.The specific hinge can be glass
Glass hinge, table top hinge, hinge for swing-up door or other enforceable hinges.The material of the hinge can be kirsite, iron, no
Become rusty steel, copper, aluminium or other enforceable materials.
In the present embodiment, the opening-closing structure 30 be hinge, by the two panels hinge fan respectively with first exposure mask
Piece 10 and the second exposure mask piece 20 are rotatably connected.The shaft and the axle sleeve realize the first exposure mask piece 10 and described
Second exposure mask piece 20 it is hinged.The connection knot of the opening-closing structure 30 and the first exposure mask piece 10 and the second exposure mask piece 20
Structure is simple, easy to accomplish.
In one embodiment, the opening-closing structure 30 is connecting the first exposure mask piece 10 and the second exposure mask piece 20
Length on direction is 1 centimetre -10 centimetres.Preferably, the opening-closing structure 30 is connecting the first exposure mask piece 10 and described
Length on second exposure mask piece, 20 direction is 3 millimeters.
In the present embodiment, the mask device 100 not only shall be limited only to the extent preparation small area solar battery, the exposure mask dress
Setting 100 can be also used for preparing the structure of any two-sided exposure mask of needs.The opening-closing structure 30 is connecting first exposure mask
Length on piece 10 and 20 direction of the second exposure mask piece can be according in the first exposure mask piece 10 and the second exposure mask piece
The thickness of sandwiched material is needed to carry out the adjusting of selectivity between 20.In the present embodiment, the opening-closing structure 30 is set and is being connected
Length on the first exposure mask piece 10 and 20 direction of the second exposure mask piece is 1 centimetre -10 centimetres.In a specific implementation
In example, the opening-closing structure 30 is 4 millis connecting the length on the first exposure mask piece 10 and 20 direction of the second exposure mask piece
Rice.The opening-closing structure 30 is connecting the first exposure mask piece 10 and the length difference on 20 direction of the second exposure mask piece, can
So that the mask device 100, which possesses, is more widely applied scene.
In one embodiment, the first exposure mask piece 10 is provided with the first location structure 12.The second exposure mask piece 20
It is provided with the second location structure 22.It is described when first location structure 12 and fixed second location structure 22 cooperation
At least one first mask pattern 11 and at least one described second mask pattern 21 are overlapped.
In the present embodiment, one kind is provided and is easy to implement the first exposure mask piece 10 and the second exposure mask piece 20 accurately fastening
Mode.Simplest, first location structure 12 and second location structure 22 can be button-shaped connection, convenient for real
The accurate fastening of the existing first exposure mask piece 10 and the second exposure mask piece 20.
In one embodiment, first location structure 12 is protrusion, and second location structure 22 is groove.Work as institute
When stating the first exposure mask piece 10 and being overlapped with the second exposure mask piece 20, the protrusion is fastened in the groove.
In the present embodiment, the specific implementation side of a kind of first location structure 12 and second location structure 22 is provided
Formula.In the present embodiment, when designing the protrusion and the groove, the size and position of the protrusion and the groove are required
It is just able to achieve by accurately measuring and previewing.
In one embodiment, first location structure 12 is aperture, and second location structure 22 is lock- receiving aperture, when
When the first exposure mask piece 10 is overlapped with the second exposure mask piece 20, the lock- receiving aperture passes through the aperture, in the lock- receiving aperture
Locate padlock with fixation the first exposure mask piece 10 and the second exposure mask piece 20.
In the present embodiment, the specific implementation side of a kind of first location structure 12 and second location structure 22 is provided
Formula.In the present embodiment, when designing the aperture and the lock- receiving aperture, the size and position of the aperture and the lock- receiving aperture
It needs just to be able to achieve by accurately measuring and previewing.In addition in the present embodiment, can also at the lock- receiving aperture padlock with solid
The fixed first exposure mask piece 10 and the second exposure mask piece 20, avoid in technical process, since various emergency situations make institute
It states the first exposure mask piece 10 and the second exposure mask piece 20 dislocation even separates, the preparation of small area solar battery is caused to occur not
It is good.
Referring to Fig. 3, in one embodiment, providing a kind of mask device 100 includes the first exposure mask piece 10, the second exposure mask
Piece 20 and opening-closing structure 30.The first exposure mask piece 10 has at least one first mask pattern 11.The second exposure mask piece 20
With at least one the second mask pattern 21.The shape of first mask pattern 11 and second mask pattern 21 can phase
With can not also be identical.First exposure mask piece, 10 He locating for first mask pattern 11 and second mask pattern 21
The position of the second exposure mask piece 20 is different.The opening-closing structure 30 respectively with the first exposure mask piece 10 and described second
Exposure mask piece 20 is flexibly connected.The opening-closing structure 30 is to adjust between the first exposure mask piece 10 and the second exposure mask piece 20
Angle so that the angle between the first exposure mask piece 10 and the second exposure mask piece 20 is 0 °.The first exposure mask piece
10 have the first complementary patterns area 13 gone out as shown in phantom in Figure 3.The second exposure mask piece 20 has as shown in phantom in Figure 3
The second complementary patterns area 23 out.At least one described first mask pattern 11 and at least one described second mask pattern 21 can
To form complementary patterns, or the complementary patterns with certain intervals in the mask device 100.
In the present embodiment, the mask device 100 can prepare complementary mask pattern on certain substrate, or
Prepare the complementary graph with certain intervals setting.The grinding device 100 provided in this embodiment can prepare two-sided mutual
The structure of complement shape, if subsequent have more harsh application demand that can also further change in Fig. 3 in preparation process
Design.
In one embodiment, a kind of preparation method of solar battery is provided.Incorporated by reference to showing solar-electricity in Fig. 4
The structural schematic diagram in pond 200.The preparation method of the solar battery the following steps are included:
S100 provides substrate 101, and the substrate 101 is located in mask device 100.The mask device 100 wraps
Include the first exposure mask piece 10, the second exposure mask piece 20 and opening-closing structure 30.The first exposure mask piece 10 has at least one first exposure mask
Figure 11.The second exposure mask piece 20 has at least one second mask pattern 21.At least one described first mask pattern 11
Each of second mask pattern 21 of each of the first mask pattern 11 and at least one second mask pattern 21
Shape it is identical.After substrate 101 described in the first exposure mask piece 10 and 20 sandwiched of the second exposure mask piece, described in each
First mask pattern 11 is overlapped with second mask pattern 21.The substrate 101 has and the first exposure mask piece 10
The first surface directly contacted and the second surface directly contacted with the second exposure mask piece 20.
In this step, the substrate 101 is located in the mask device 100, it can be by the first exposure mask piece 10
It is fixed with the second exposure mask piece 20, to prevent the dislocation of mask device 100 during subsequent deposition process from causing
The each film layer structure for the solar battery 200 prepared goes wrong, cannot so as to cause the solar battery 200
Normal luminous.
S200 deposits the first intrinsic layer 201 and the second intrinsic layer in the first surface and the second surface respectively
202。
S300 deposits the first doped layer on the surface of first intrinsic layer 201 and second intrinsic layer 202 respectively
203 and second doped layer 204.Wherein, the first doped layer 203 has same conductivity type, the second doped layer 204 with substrate 101
There are different conduction-types with substrate 101.
S400 deposits the first electrically conducting transparent on the surface of first doped layer 203 and second doped layer 204 respectively
Layer 301 and the second transparency conducting layer 302.First transparency conducting layer 301 and second transparency conducting layer 302 can be and lead
Electric glass (TCO).The TCO thin film of high quality can be tin indium oxide (ITO), adulterate the SnO of fluorine2Or some Zinc oxide-bases
Film such as ZnO:AIZAO.
S500, on the surface of first transparency conducting layer 301 and second transparency conducting layer 302, difference first is conductive
Electrode 401 and the second conductive electrode 402.
In above-mentioned each step, mixed in the first intrinsic layer 201 of deposition, the second intrinsic layer 202, the first doped layer 203, second
Diamicton 204, the first transparency conducting layer 301, the second transparency conducting layer 302, the first conductive electrode 401 and the second conductive electrode 402
In each film layer when, the deposition method and sedimentary condition of use specifically can be art technology herein without illustrating one by one
Personnel think feasible mode.
In the present embodiment, the two-sided of substrate 101 is covered by can disposably be realized in the mask device 100
Film.The same effect of two-sided mask pattern may be implemented in the preparation method of the solar battery in the present embodiment.And it adopts
The small area solar battery prepared with the preparation method of the solar battery can achieve success rate 100%.Using institute
When stating the solar battery of preparation method preparation small area of solar battery, a wide range of improved premise is not necessarily in preparation process
Lower preparation efficiency is obviously improved, and has saved a large amount of cost.
In one embodiment, the table in first transparency conducting layer 301 and second transparency conducting layer 302
Face respectively the first conductive electrode 401 and the step of the second conductive electrode 402 in include: to remove the mask device 100.Institute
The surface for stating the first transparency conducting layer 301 deposits first conductive electrode 401.In the table of second transparency conducting layer 302
Face deposits second conductive electrode 402.
In the present embodiment, the method that can use silk-screen is selected different single side mask plates to deposit described first respectively and is led
Electrode 401 and second conductive electrode 402.First conductive electrode 401 and second conductive electrode 402 can be made
It is used for the anode or cathode of the solar battery 200.
In one embodiment, the first intrinsic layer 201 and are deposited respectively in the first surface and the second surface
Before the step of two intrinsic layer 202, further includes: by the first exposure mask piece 10 and described after substrate 101 described in sandwiched
Two exposure mask pieces 20 are fixed far from the edge of the opening-closing structure 30.
In the present embodiment, before depositing first intrinsic layer 201 and second intrinsic layer 202, by described first
Exposure mask piece 10 and the second exposure mask piece 20 are fixed.For example high-temp glue can be selected, by the first exposure mask piece 10 and described
Two exposure mask pieces 20 are fixed far from the edge of the opening-closing structure 30.
Current, amorphous silicon/crystalline silicon heterojunction solar battery (the Heterojunction with intrinsic film
Intrinsic Thinlayer, HJT) there is many advantages, such as less energy consumption, process flow are simple, temperature coefficient is small.It is preparing
When the HJT battery of 10mm*10mm, using the crystal silicon chip of 156mm*156mm.According to the process flow of HJT battery: cleaning and texturing,
CVD (chemical vapor deposition Chemical Vapour Deposition), PVD, silk-screen annealing operation.The application and conventional method
Be a difference in that in PVD process, mask pattern is prepared in the front and back of substrate using the mask device 100
For the small area solar battery of 10mm*10mm.After the completion of silk-screen annealing, the technique cut or be cut by laser by hand is cut
Cut out the solar battery 200 of 10mm*10mm one by one.
In a specific embodiment, such as specifically in PVD (Physical Vapor Deposition, physical vapor
Deposition) process flow in:
The first step, exposure mask.Silicon wafer is first placed on to 10 side of the first exposure mask piece of the mask device 100, silicon wafer (institute
State substrate 101) first surface towards the first exposure mask piece 10, second surface (being symmetrical arranged with the first surface) is towards institute
The second exposure mask piece 20 is stated, is not provided with first mask pattern in the first exposure mask piece 10 and the second exposure mask piece 20
11 and the region of second mask pattern 21 silicon wafer and the first exposure mask piece 10 are fixed up with high temperature gummed tape.Later,
The opening-closing structure 30 is folded so that the angle between the first exposure mask piece 10 and the second exposure mask piece 20 is 0 °.Finally,
The edge of the first exposure mask piece 10 and the second exposure mask piece 20 is aligned.With high temperature gummed tape by 10 He of the first exposure mask piece
The second exposure mask piece 20 is fixed far from the edge of the opening-closing structure 30.
Step 2: the first exposure mask piece 10 for the mask device 100 for fixing silicon wafer is placed on PVD's upward
On support plate, fixed with high temperature gummed tape, using certain process conditions vapor deposition tin indium oxide (ITO is transparent conductive semiconductor film,
The light transmittance of the solar battery 200 can be increased.) layer.Here ITO layer is as first transparency conducting layer 301.
Step 3: the fixed high temperature gummed tape of second step is removed after ITO layer has been deposited.
Step 4: turn-over, the second exposure mask piece 20 for the mask device 100 for fixing silicon wafer is placed on upward
It on the support plate of PVD, is fixed with high temperature gummed tape, ITO layer is deposited, plated ITO layer and be deposited Ag layers again later.Here ITO layer and Ag
Layer is used as second transparency conducting layer 302.
In the present embodiment, does not provide and prepare first intrinsic layer 201, second intrinsic layer 202, described first mix
The step of diamicton 203 and the second doped layer 204.Specifically, first intrinsic layer 201, second intrinsic layer
202, the deposition and preparation method of first doped layer 203 and second doped layer 204 can be with those skilled in the art
Further it is arranged.
The small area solar battery of the preparation of the mask device 100 using the application is given in table below
200 prepare the data comparison of small area solar battery 200 with traditional scheme.Table 1 is to be prepared using traditional mask device
Fill factor (Fill Factor) of the small area solar battery 200 before and after cutting technique.It strictly speaking is to exclude series electrical
Hinder the fill factor pFF influenced.PFF has become 0.93 after cutting, has changed 7%.Table 2 is using the exposure mask in the application
Device 100 prepare small area solar battery 200 before cutting after Parameters variation.As can be seen that pFF becomes after cutting
0.99, the amplitude of variation for only having changed 1%, pFF significantly reduces.Table 3 is using traditional mask device and using in the application
The mask device 100 prepare small area solar battery 200 parameter comparison data.Using the exposure mask of the application
The solar battery 200 that device 100 is worked it out and 200 phase of the solar battery worked it out with traditional mask device
Than parallel resistance Rsh is significantly promoted, and Voc and FF are also obviously improved.
Table 1: the small area solar battery 200 prepared using traditional mask device before cutting after Parameters variation
Table 2: using in the application the mask device 100 prepare small area solar battery 200 before cutting after
Parameters variation
Table 3: using traditional mask device and the small area sun prepared using the mask device 100 in the application
The parameter comparison data of energy battery 200
| The mask device of use | Voc(V) | FF (%) | Rsh(ohm) |
| Traditional mask device | 1.00 | 1.00 | 1.00 |
| Mask device in the application | 1.01 | 1.16 | 4.94 |
In the application, the mask device 100 is a symmetrical, folding structure, not only be can be realized simultaneously double
Face exposure mask, and can be in the mask pattern as two-sided formation.The mask device 100 provided herein can hold very much
The same mask pattern is easily formed on the two sides of solar energy in large area battery, two-sided exposure mask is realized in technical process, efficiently
Prepare the solar battery 200 of small area.And the solar-electricity prepared using the preparation method in the application
The parallel resistance in pond 200 increases substantially, and open-circuit voltage and fill factor are obviously improved.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of mask device (100) characterized by comprising
First exposure mask piece (10) has at least one first mask pattern (11)；
Second exposure mask piece (20) has at least one second mask pattern (21), at least one described first mask pattern (11)
Each of the second exposure mask figure of each of the first mask pattern (11) and at least one second mask pattern (21)
The shape of shape (21) is identical；And
Opening-closing structure (30) is flexibly connected, to adjust respectively with the first exposure mask piece (10) and the second exposure mask piece (20)
Save the angle between the first exposure mask piece (10) and the second exposure mask piece (20) so that the first exposure mask piece (10) and
When the second exposure mask piece (20) is closed, at least one described first mask pattern (11) and at least one described second exposure mask figure
Shape (21) is overlapped.
2. mask device as described in claim 1, which is characterized in that the opening-closing structure (30) and the first exposure mask piece
(10) be rotatably connected with the second exposure mask piece (20), the opening-closing structure (30) make the first exposure mask piece (10) and
The second exposure mask piece (20) realizes 0 ° -180 ° of rotation.
3. mask device as described in claim 1, which is characterized in that the opening-closing structure (30) is hinge, the hinge packet
Include two panels hinge fan, shaft and axle sleeve, the two panels hinge fan respectively with the first exposure mask piece (10) and second exposure mask
Piece (20) is rotatably connected, and the shaft and the axle sleeve realize the first exposure mask piece (10) and the second exposure mask piece (20)
It is hinged.
4. mask device as described in claim 1, which is characterized in that the opening-closing structure (30) is connecting first exposure mask
Length on piece (10) and the second exposure mask piece (20) direction is 1 centimetre -10 centimetres.
5. mask device as described in claim 1, which is characterized in that
The first exposure mask piece (10) is provided with the first location structure (12)；
The second exposure mask piece (20) is provided with the second location structure (22)；
When first location structure (12) and second location structure (22) cooperation fixed, it is described at least one first cover
Film pattern (11) and at least one described second mask pattern (21) are overlapped.
6. mask device as claimed in claim 5, which is characterized in that first location structure (12) is protrusion, described the
Two location structures (22) are groove, when the first exposure mask piece (10) is overlapped with the second exposure mask piece (20), the protrusion
It is fastened in the groove.
7. mask device as claimed in claim 5, which is characterized in that first location structure (12) is aperture, described the
Two location structures (22) are lock- receiving aperture, when the first exposure mask piece (10) is overlapped with the second exposure mask piece (20), the extension
Lockhole passes through the aperture, and padlock is at the lock- receiving aperture with fixation the first exposure mask piece (10) and the second exposure mask piece
(20)。
8. a kind of preparation method of solar battery, which comprises the following steps:
It provides substrate (101), and the substrate (101) is located in mask device (100)；Wherein, the mask device
It (100) include: the first exposure mask piece (10), the second exposure mask piece (20) and opening-closing structure (30), the first exposure mask piece (10) has
At least one first mask pattern (11), the second exposure mask piece (20) has at least one second mask pattern (21), described
The first mask pattern of each of at least one first mask pattern (11) (11) and at least one described second mask pattern
Each of (21) shape of the second mask pattern (21) is identical works as the first exposure mask piece (10) and the second exposure mask piece
(20) after substrate described in sandwiched (101), each described first mask pattern (11) and second mask pattern
(21) it is overlapped, the substrate (101) has the first surface directly contacted with the first exposure mask piece (10) and with described second
The second surface that exposure mask piece (20) directly contacts；
The first intrinsic layer (201) and the second intrinsic layer (202) are deposited respectively in the first surface and the second surface；
The surface of first intrinsic layer (201) and second intrinsic layer (202) deposit respectively the first doped layer (203) and
Second doped layer (204)；
The first transparency conducting layer is deposited respectively on the surface of first doped layer (203) and second doped layer (204)
(301) and the second transparency conducting layer (302)；
The first conductive electrode is distinguished on the surface of first transparency conducting layer (301) and second transparency conducting layer (302)
(401) and the second conductive electrode (402).
9. preparation method as claimed in claim 8, which is characterized in that described in first transparency conducting layer (301) and institute
It is wrapped in the step of stating surface difference the first conductive electrode (401) and the second conductive electrode (402) of the second transparency conducting layer (302)
It includes:
The mask device (100) are removed；
First conductive electrode (401) is deposited on the surface of first transparency conducting layer (301)；
Second conductive electrode (402) is deposited on the surface of second transparency conducting layer (302).
10. preparation method as claimed in claim 8, which is characterized in that distinguish in the first surface and the second surface
Before the step of depositing the first intrinsic layer (201) and the second intrinsic layer (202), further includes:
By after substrate described in sandwiched (101) the first exposure mask piece (10) and the second exposure mask piece (20) open far from described
The edge for closing structure (30) is fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811010346.4A CN109119365A (en) | 2018-08-31 | 2018-08-31 | The preparation method of mask device and solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811010346.4A CN109119365A (en) | 2018-08-31 | 2018-08-31 | The preparation method of mask device and solar battery |
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| Publication Number | Publication Date |
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| CN109119365A true CN109119365A (en) | 2019-01-01 |
Family
ID=64861618
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|---|---|---|---|
| CN201811010346.4A Pending CN109119365A (en) | 2018-08-31 | 2018-08-31 | The preparation method of mask device and solar battery |
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| US20090279057A1 (en) * | 2008-05-07 | 2009-11-12 | Protec Co., Ltd. | Independent upper side and lower side drive type double-sided simultaneous exposure system |
| CN202189230U (en) * | 2011-09-09 | 2012-04-11 | 惠州市星之光科技有限公司 | Hinge contraposition exposure device |
| CN203049019U (en) * | 2012-12-21 | 2013-07-10 | 深圳市创益科技发展有限公司 | Mask film device used for preparing back electrode of thin-film solar cell |
| CN106601672A (en) * | 2016-11-28 | 2017-04-26 | 西安空间无线电技术研究所 | Method for eliminating cutting burrs of film circuit |
| CN206775845U (en) * | 2017-06-06 | 2017-12-19 | 伟裕(厦门)电子有限公司 | A kind of flexible PCB exposes accessory |
| CN108288657A (en) * | 2018-01-30 | 2018-07-17 | 厦门乾照光电股份有限公司 | A kind of GaAs systems multijunction solar cell and preparation method thereof |
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2018
- 2018-08-31 CN CN201811010346.4A patent/CN109119365A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090279057A1 (en) * | 2008-05-07 | 2009-11-12 | Protec Co., Ltd. | Independent upper side and lower side drive type double-sided simultaneous exposure system |
| CN202189230U (en) * | 2011-09-09 | 2012-04-11 | 惠州市星之光科技有限公司 | Hinge contraposition exposure device |
| CN203049019U (en) * | 2012-12-21 | 2013-07-10 | 深圳市创益科技发展有限公司 | Mask film device used for preparing back electrode of thin-film solar cell |
| CN106601672A (en) * | 2016-11-28 | 2017-04-26 | 西安空间无线电技术研究所 | Method for eliminating cutting burrs of film circuit |
| CN206775845U (en) * | 2017-06-06 | 2017-12-19 | 伟裕(厦门)电子有限公司 | A kind of flexible PCB exposes accessory |
| CN108288657A (en) * | 2018-01-30 | 2018-07-17 | 厦门乾照光电股份有限公司 | A kind of GaAs systems multijunction solar cell and preparation method thereof |
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