CN109103330A - A kind of N doping Ge-Se-As OTS material, OTS gate unit and preparation method thereof - Google Patents
A kind of N doping Ge-Se-As OTS material, OTS gate unit and preparation method thereof Download PDFInfo
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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Abstract
The present invention relates to a kind of N doping Ge-Se-As OTS material, OTS gate unit and preparation method thereof, the chemical general formula of the N doping Ge-Se-As OTS material is GeSeAs0.2Nx, wherein 0 < x < 1.0.The OST layer of OTS gate unit includes that the N adulterates Ge-Se-As OTS material.The OTS material, under the action of external electrical field, can be realized high-resistance state to low resistance state instantaneous transition；When removing external electrical field, it can be changed immediately from low resistance state to high-resistance state.When its medium as OTS, OTS unit not only has many advantages, such as that threshold voltage is low, on-off ratio is big, but also the thermal stability of device and reliability are all improved.
Description
Technical field
The invention belongs to microelectronics technology, in particular to a kind of N adulterates Ge-Se-As OTS material, OTS gate
Unit and preparation method thereof.
Background technique
With the arrival of big data era, the market demand of memory is just becoming increasing.With miniature, the phase of size
The novel nonvolatile memory such as transition storage and resistance-variable storing device all develops towards the direction of high density and three-dimensional device structures.
Traditional gating device such as transistor and diode is all unable to satisfy the following novel memory devices on device size and driving capability
Development.Therefore, it is necessary to research and develop the gating device that switch performance is good, driving current is big to gate storage unit.Currently,
It is considered as the gate of most application value using chalcogenide compound thin-film material as the OTS gate of medium.With crystalline substance
Body pipe is compared with diode selection device, and OTS gate has firing current is big, leakage current is small, on-off ratio is big and miniature property is good etc.
Advantage.Its critical material includes the chalcogenide compound film with threshold transitions characteristic, heating electrode material, insulating materials and draws
Electrode material etc. out.The basic principle of OTS gate is: the switch of gating device is controlled using electrical signal, it is electric when applying
Signal is learned in gating device unit, changes material from high-impedance state to low resistance state, device is in the open state at this time；When removing electricity
When learning signal, material is transformed into high-impedance state by low resistance state again, and device is in close state.S.R.Ovshinsky is in 20th century 60
Age end has found the material with threshold transitions characteristic for the first time, has thus caused scientist's grinding for threshold transitions phenomenon
Study carefully, and has found a series of chalcogenide compounds with threshold transitions characteristic.OTS material is that one type is able to satisfy gate and wants
The amorphous chalcogenide compound material asked.It so far, is chalcogenide compound Ge-Se film for the typical material of OTS gate,
Wherein most widely used with GeSe, i.e., the atomic ratio of two kinds of elemental compositions of Ge, Se is 1:1.
The research of OTS gate is mainly towards the direction of high firing current, low-leakage current, high on-off ratio and low threshold voltage
Development.For binary Ge-Se material, threshold voltage needed for gate is opened is higher, so as to cause other device performances such as fatigue
Number and reliability are also affected.In addition, the thermal stability of gate is also the key factor for influencing its performance.In consideration of it,
How modified thermal stability, on-off ratio and reduction leakage current to improve gate is doped to Ge-Se material and threshold value turns
Time variant voltage meets actual requirement, becomes those skilled in the art's urgent problem to be solved.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of N to adulterate Ge-Se-As OTS material, OTS gate unit
And preparation method thereof, threshold voltage needed for overcoming in the prior art is higher, so as to cause other device performances such as times of fatigue and
The defect that reliability is also affected, thermal stability is poor, on-off ratio is small, the N adulterate Jie of the Ge-Se-As OTS material as OTS
When matter, OTS unit not only has many advantages, such as that threshold voltage is low, on-off ratio is big, but also the thermal stability of device is after introducing N element
It is greatly improved.
A kind of N of the invention adulterates Ge-Se-As OTS material, and the chemical general formula of the material is GeSeAs0.2Nx, wherein
X refers to the atomic ratio of N element, and meets 0 < x < 1.0.
It is preferred that 0.1 < x < 0.5.
The preparation method of a kind of N doping Ge-Se-As OTS material of the invention, using sputtering method, ion implantation, steaming
Hair method, chemical vapour deposition technique (CVD), plasma enhanced chemical vapor deposition method (PECVD), Low Pressure Chemical Vapor Deposition
(LPCVD), metallic compound vapour deposition process (MOCVD), molecular beam epitaxy (MBE), atomic vapor deposition method (AVD) or original
Sublayer sedimentation (ALD) is prepared.
The preferred embodiment of above-mentioned preparation method is as follows:
As element in the N doping Ge-Se-AsOTS material is prepared by As ion implantation, also can use As target
It, can also using As target, Ge target and three target co-sputtering of Se target or altogether with the methods of two target co-sputtering of GeSe target or coevaporation preparation
The methods of evaporation preparation.
The doping of N realizes N doping by N ion implantation in the N doping Ge-Se-AsOTS material, can also be in magnetic
N is passed through in control sputtering process2Realize N doping, it can also be by N2N doping is realized in annealing in atmosphere.
The N doping Ge-Se-AsOTS material prepares Ge-Se-N film using magnetron sputtering method, is then infused by ion
The mode entered is injected As into Ge-Se-N film and is prepared.
A kind of OTS gate unit of the invention, structure include lower electrode layer, upper electrode layer and be located at upper and lower electrode layer
Between OTS material layer, described OST layers is adulterated Ge-Se-As OTS material comprising the N.
Barrier layer is equipped between the upper electrode layer and OTS material layer and/or between lower electrode layer and OTS material layer.
The barrier layer is the C film or carbide thin film of 1-10nm.
In order to improve the reliability and stability of device, between upper electrode layer and OTS material layer and lower electrode layer with
The stable thickness with certain conductivity of one layer of performance is inserted between OTS material layer in the C film or carbide of 1-10nm
Film is as barrier layer, to prevent the diffusion of the up and down electrode layer of OTS material or prevent between OTS material and upper and lower electrode layer
Chemical reaction.
The material of the upper and lower electrode layer include: monometallic material or by any two kinds in the monometallic material or
Multiple combinations at alloy material or the monometallic material nitride, carbide or oxide.
The monometallic material is one of W, Pt, Au, Ti, Al, Ag, Cu, Ni.
A kind of preparation method of gate unit of the invention, comprising:
Form lower electrode layer, OST layers, upper electrode layer；
Extraction electrode is formed on the upper electrode layer, upper electrode layer, lower electrode layer are passed through the extraction electrode and device
Storage unit, driving circuit and the peripheral circuit of part are integrated.
A kind of preparation of gate unit includes:
Lower electrode layer is formed, barrier layer under being formed on lower electrode layer forms OTS material layer on lower barrier layer, then in OST
Upper barrier layer is formed in material layer, forms upper electrode layer on upper barrier layer；
Extraction electrode is formed on the upper electrode layer, upper electrode layer, lower electrode layer are passed through the extraction electrode and device
Storage unit, driving circuit and the peripheral circuit of part are integrated.
The material of the extraction electrode includes: any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu or Ni,
Or by any combination of two or more in the monometallic material at alloy material.
The method of the lower electrode layer, the OTS layers described, upper electrode layer and the extraction electrode includes: sputtering method, steams
Hair method, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound
One of vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method.
Beneficial effect
The novel OTS material of Ge-Se-As is adulterated provided by the present invention for the N of OTS gate, it is fast at a high temperature of 600 DEG C
Constant temperature 6 hours at 2min and 300 DEG C of speed heat annealing, which is still able to maintain noncrystalline state, in the effect of external energy
Under, can be realized high-resistance state to low resistance state instantaneous transition；It, can be immediately from low resistance state to height when removing external energy
Resistance states transformation；It is compared with the OTS gate based on GeSe, the introducing of elements A s and N significantly reduce threshold voltage, improve
On-off ratio, to be more applicable for the practical application of OTS gate, the threshold voltage of device is compared with GeSe after constituent optimization
It all reduces obvious；
When its medium as OTS, OTS unit not only has the low about 2.0V of threshold voltage, the voltage value of existing GeSe
For 4.5V, on-off ratio is big the advantages that, and the thermal stability of device is greatly improved after introducing N element, such as 600
Under DEG C high temperature, GeSeAs0.2N0.1OTS thin-film material does not crystallize, and thermal stability is significantly larger than common GeSe OTS material
400 DEG C of material, the high heat stability performance of material effectively improves the reliability of OTS gate, so that device is able to satisfy higher environment
It is required that.
Detailed description of the invention
Fig. 1 is shown as GeSeAs0.2N0.1OTS material is applied in OTS gate, is formed by device cell and swashs in voltage
Current-voltage (I-V) curve measured under the effect of encouraging；
Fig. 2 is shown as the structural schematic diagram of OTS gate unit of the invention (not comprising upper and lower barrier layer)；Under wherein
Electrode layer 1, OTS material layer 2, upper electrode 3, extraction electrode 4；
Fig. 3 is shown as formed as the schematic diagram of lower electrode layer；Wherein lower electrode 1；
Fig. 4 is shown as forming the schematic diagram of OTS material layer on lower electrode layer；Wherein lower electrode layer 1, OTS material layer 2；
Fig. 5 is shown as forming the schematic diagram of upper electrode layer in OTS material layer；Wherein lower electrode layer 1, OTS material layer 2,
Upper electrode 3；
Fig. 6 is shown as GeSeAs0.2N0.1The relation curve of OTS thin-film material square resistance and annealing temperature；
Fig. 7 is shown as GeSeAs0.2N0.12 minutes X-ray diffractions of rapid thermal annealing under OTS thin-film material different temperatures
Figure；
Fig. 8 is shown as GeSeAs0.2N0.1Anneal in the 300 DEG C of pipe type furnaces X-ray of different time of OTS thin-film material is spread out
Penetrate figure.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In addition, it should also be understood that, after reading the content taught by the present invention, those skilled in the art
Member can make various changes or modifications the present invention, and such equivalent forms equally fall within the application the appended claims and limited
Range.
Embodiment 1
Using magnetron sputtering method, preparation Ge-Se-N is sputtered with GeSe alloys target, then by way of ion implanting to
As is injected in Ge-Se-N film to prepare GeSeAs0.2N0.1OTS material film layers.
Technological parameter are as follows: background air pressure is 1 × 10-5Pa, Ar gas air pressure is 0.2Pa when sputtering, N when sputtering2Gas flow
For 2sccm, sputtering power is GeSe alloys target 20W, and underlayer temperature is 25 DEG C, and the dosage setting of As injection is 1.0 × 1016/
cm2, by controlling sputtering time, so that OTS material film thickness is 20nm.
It in other embodiments, can also be by adjusting N when sputtering2Gas flow adjusts GeSeAs0.2NxN in OTS material
Atomic ratio.For example, during the preparation process, the power of control GeSe alloys target is always 20W, by adjusting N2Gas flow comes
The content of N in film is controlled, gases used flow is respectively 0sccm, 2sccm, 4sccm and 6sccm, the dosage setting of As injection
It is 1.0 × 1016/cm2, corresponding OTS material is respectively as follows: GeSeAs0.2、GeSeAs0.2N0.1、GeSeAs0.2N0.15With
GeSeAs0.2N0.2；Film thickness is controlled by control sputtering time.
The stability of amorphous network structure can be improved due to introducing N element, to enhance GeSeAs0.2NxThe heat of OTS material
Stability.GeSeAs0.2NxThe content of N element controls in reasonable range in OTS material, to improve the same of device performance
When can effectively avoid because incorporation excessively material is caused to be segregated.
Embodiment 2
As shown in Fig. 2, being shown as the structural schematic diagram of OTS gate unit, the OTS gate unit includes lower electrode
Layer 1, upper electrode layer 3 and the OTS material layer 2 between the lower electrode layer 1 and upper electrode layer 3；The OTS material layer 2 is adopted
Ge-Se-AsOTS material is adulterated with N, the chemical general formula of the N doping Ge-Se-AsOTS material is GeSeAs0.2Nx, wherein x refers to
The atomic ratio of N element, and meet 0 < x < 1.0.
Extraction electrode 4 is also formed on the upper electrode layer 3.
Include GeSeAs0.2NxThe preparation process of the OTS gate unit of OTS material is specific as follows:
Step 1: referring to Fig. 3, using sputtering method, ion implantation, evaporation, chemical vapour deposition technique, plasma
Enhance chemical vapour deposition technique, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atom
Any one in vapour deposition process or atomic layer deposition method prepares lower electrode layer 1, and the present embodiment preferably uses described in CVD method preparation
Lower electrode layer 1.The material of lower electrode layer 1 is any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu or Ni, or by
Any combination of two or more in above-mentioned monometallic material at alloy material or above-mentioned monometallic material nitride or oxygen
Compound.
In the present embodiment, the material of lower electrode layer 1 is preferably W.The diameter of gained W electrode is 80nm, is highly 200nm.
Step 2: referring to Fig. 4, preparing OTS material layer 2 on lower electrode layer 1, Ge-Se-AsOTS material is adulterated using N,
Chemical general formula is GeSeAs0.2Nx, wherein x refers to the atomic ratio of N element, and meets 0 < x < 1.0.
Sputtering method, ion implantation, evaporation, chemical vapor deposition can be used in the preparation method of the OTS material layer 2
Method, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam
Any one in epitaxy, atomic vapor deposition method or atomic layer deposition method.
The present embodiment uses magnetron sputtering method on W lower electrode layer 1, first with GeSe alloys target under conditions of being passed through nitrogen
Deposition a layer thickness is about the Ge-Se-N material of 20nm, technological parameter are as follows: background air pressure is 1 × 10-5Pa, Ar gas when sputtering
Air pressure is 0.2Pa, N when sputtering2Gas flow is 2sccm, and sputtering power is GeSe alloys target 20W, and underlayer temperature is 25 DEG C, is splashed
Penetrate time 20-25min.Then As is injected into Ge-Se-N film by way of ion implanting again to prepare
GeSeAs0.2N0.1OTS material layer 2, the dosage setting of injection are 1.0 × 1016/cm2。
Step 3: referring to Fig. 5, in OTS material layer 2, using sputtering method, ion implantation, evaporation, chemical gaseous phase
Sedimentation, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, is divided at plasma enhanced chemical vapor deposition method
Any one in beamlet epitaxy, atomic vapor deposition method or atomic layer deposition method prepares upper electrode layer 3.The material of upper electrode layer 3
Material is any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu or Ni, or by any in the monometallic material
Combination of two or more at alloy material or the monometallic material nitride or oxide.
The present embodiment is in GeSeAs0.2N0.1Upper electrode layer 3 is prepared using magnetron sputtering method in OTS material layer 2, it is described to power on
The material of pole layer 3 is preferably TiN, technological parameter are as follows: background air pressure is 1 × 10-5Pa, air pressure is 0.2Pa, Ar/N when sputtering2's
Gas flow ratio is 1:1, and sputtering power 100W, underlayer temperature is 25 DEG C, sputtering time 20-25min.Gained TiN electrode
Thickness is about 20nm.
Step 4: referring to Fig. 2, prepare extraction electrode 4 on the upper electrode layer 3, using sputtering method, ion implantation,
Evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metal compound
Any one in object vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method.Then upper and lower
Electrode is integrated by storage unit, driving circuit and the peripheral circuit of the extraction electrode 4 and device cell, used processing
Method is conventional semiconductor technology；Material as extraction electrode 4 is monometallic material W, Pt, Au, Ti, Al, Ag, Cu or Ni
In any one, or by any combination of two or more in the monometallic material at alloy material.
The present embodiment prepares extraction electrode 4, material Al using magnetron sputtering method, and 4 film thickness of extraction electrode is
200nm etches extraction electrode 4 using conventional semiconductor process, storage unit, driving circuit and the periphery electricity with device cell
Road is integrated, to prepare complete OTS gate unit.
Embodiment 3
The test of electric property is carried out to the OTS gate unit in above-described embodiment below:
Test current-voltage (I-V) curve of device cell under voltage drive effect.Test result is referring to Figure 1.It can
See the increase with voltage, current value first continues to increase, and when arriving certain point, electric current jumps suddenly, continues thereafter with lasting increasing
Add.The point is the threshold point of the device cell, and the voltage at the point is threshold voltage.To based on GeSeAs0.2N0.1OTS choosing
Logical device unit, measured threshold voltage is about 2.0V.It is compared with the OTS gate based on GeSe, the introducing pole of elements A s and N
The earth reduces threshold voltage, on-off ratio is improved, to be more applicable for the practical application of OTS gate.
Embodiment 4
The present embodiment and embodiment one, two use essentially identical technical solution, the difference is that, OTS material layer
Preparation method is changed to AVD or ALD method, also can reach identical technical effect: threshold voltage about 2.0V.
Embodiment 5
The present embodiment and embodiment one, two, four use essentially identical technical solution, the difference is that embodiment one
In N2Gas flow is set as 4sccm.Remaining step is identical with embodiment one.Work as N2Gas flow is set as 4sccm
When, corresponding OTS thin-film material group is divided into GeSeAs0.2N0.15, the electric property of corresponding device can also reach similar effect:
Threshold voltage 1.9V or less).
Embodiment 6
The present embodiment and embodiment one, two, four use essentially identical technical solution, the difference is that embodiment one
In N2Gas flow is set as 6sccm.Remaining step is identical with embodiment one.Work as N2Gas flow is set as 4sccm
When, corresponding OTS thin-film material group is divided into GeSeAs0.2N0.2, the electric property of corresponding device can also reach similar effect: threshold
Threshold voltage 1.8V or less).
Embodiment 7
The present embodiment and embodiment one, two use essentially identical OTS material preparation method and processing step, difference
It is in the step 2 of embodiment two, before preparing OTS material, prepares C film using magnetron sputtering on lower electrode layer,
Thickness is about 2-10nm, forms lower barrier layer；Then OTS material layer, the preparation side of OTS material layer are prepared again on lower barrier layer
Method is identical as described in embodiment one, two, and OTS thin-film material group is divided into GeSeAs0.2N0.10；Then sharp in OST material layer
C film is prepared with magnetron sputtering, thickness is about 2-10nm, and barrier layer in formation finally forms top electrode on upper barrier layer
Layer, remaining step are identical with embodiment one, two.The device of corresponding device can reach better effect, not only threshold voltage
It is low, reach 2.0V hereinafter, and its leakage current substantially reduce, reach 10-11A is hereinafter, the device compared to not barrier layer reduces by 10
Times or more；On-off ratio greatly improves, and reaches 105More than, the device compared to not barrier layer improves 10 times or more.
Embodiment 8
The present embodiment and embodiment one, two, seven use essentially identical OTS material preparation method and processing step, different
Place is in embodiment seven, before preparing OTS material, prepares SiC film using magnetron sputtering on lower electrode layer, thick
Degree is about 2-8nm, forms lower barrier layer；Then OTS material layer, the preparation method of OTS material layer are prepared again on lower barrier layer
Identical as described in embodiment one, two, OTS thin-film material group is divided into GeSeAs0.2N0.15；Then it is utilized in OST material layer
Magnetron sputtering prepares SiC film, and thickness is about 2-8nm, and barrier layer in formation finally forms top electrode on upper barrier layer
Layer, remaining step are identical with embodiment one, two.The device of corresponding device can reach better effect, not only threshold voltage
It is low, reach 1.9V hereinafter, and its leakage current substantially reduce, can reach 10-12A or so, the device compared to not barrier layer reduce
About 100 times；On-off ratio greatly improves, and about 106, compared to about 100 times of the device raising on not barrier layer.
Embodiment 9
The present embodiment is to GeSeAs0.2NxThe characteristic of OTS material film is analyzed and researched.Sample uses N2Gas flow
For 2sccm, sputtering power is that the implantation dosage of GeSe alloys target 20W, As are 1.0 × 1016/cm2GeSeAs0.2N0.1OTS is thin
Film.
Referring to Fig. 6, being shown as the GeSeAs measured using In Situ Heating system0.2N0.1The square electricity of OTS thin-film material
The relation curve of resistance and annealing temperature.As shown in figure heating curve, as the temperature increases, under the resistance of OTS material shows
The trend of drop, and until 400 DEG C also remain identical trend.Different from the characteristic of phase change film material, OTS material is not
A certain critical-temperature (or critical-temperature section) is appeared in, the phenomenon that resistance value is decreased obviously suddenly.This means that OTS material is one
The process by amorphous state for polycrystalline state will not occur within the scope of fixed temperature, material can be always maintained at the structure of amorphous.By
In in temperature-rise period OTS material the transformation of polycrystalline state does not occur, therefore upon a drop in temperature, the resistance of OTS material shows
The trend of rising, and it is eventually returned to initial high resistance state.OTS material resistance value generally all with higher, thus OTS is gated
Leakage current when device is in OFF state can be very low, this is conducive to application of the gate in high-density storage.It should be pointed out that
OTS material is not intended to large area during operation and crystalline structure occurs, it is therefore desirable to improve OTS material as much as possible
Thermal stability.
N doping Ge-Se-AsOTS material of the invention can make its thermal stability be greatly improved, referring to Fig. 7, aobvious
It is shown as GeSeAs0.2N0.12 minutes X-ray diffractograms of rapid thermal annealing under OTS thin-film material different temperatures.As it can be seen that diffraction is bent
All show that thin-film material still maintains noncrystalline state with the increase of annealing temperature without there is apparent diffraction maximum in line.
Under 600 DEG C of high temperature, GeSeAs0.2N0.1OTS thin-film material does not crystallize, and thermal stability is significantly larger than common GeSe
OTS material (400 DEG C).Therefore, N adulterates Ge-Se-AsOTS material and provides a kind of OTS gate medium material of high thermal stability
Material.
Again referring to Fig. 8, being shown as GeSeAs0.2N0.1OTS thin-film material is annealed different time in 300 DEG C of pipe type furnaces
X-ray diffractogram.As it can be seen that in 300 DEG C of pipe type furnaces to thin-film material carry out long term annealing processing, diffraction curve with
The increase of annealing time do not occur diffraction maximum equally.Further demonstrate GeSeAs0.2N0.1No matter OTS thin-film material is in high temperature
Rapid thermal annealing still all shows fabulous thermal stability in tube furnace high temperature long term annealing.Therefore, it is mixed using N
Miscellaneous Ge-Se-AsOTS material facilitates to promote the thermal stability of OTS gate as gate dielectric material, so that device can be with
It is used in higher environmental requirement, further increases the reliability of device.
Claims (10)
1. a kind of N adulterates Ge-Se-As OTS material, which is characterized in that the chemical general formula of the material is GeSeAs0.2Nx, wherein
0<x<1.0。
2. material according to claim 1, which is characterized in that 0.1 < x < 0.5.
3. a kind of preparation method of N doping Ge-Se-As OTS material as described in claim 1, which is characterized in that use and splash
Penetrate method, ion implantation, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, low pressure chemical phase
Sedimentation, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method preparation and
At.
4. a kind of OTS gate unit, structure includes lower electrode layer, upper electrode layer and the OTS material between upper and lower electrode layer
The bed of material, which is characterized in that described OST layers is adulterated Ge-Se-As OTS material comprising N described in claim 1.
5. gate unit according to claim 4, which is characterized in that between the upper electrode layer and OTS material layer and/
Or barrier layer is equipped between lower electrode layer and OTS material layer.
6. gate unit according to claim 5, which is characterized in that the barrier layer is that C film or carbide are thin
Film.
7. gate unit according to claim 4, which is characterized in that the material of the upper and lower electrode layer includes: Dan Jin
Belong to material or by any combination of two or more in the monometallic material at alloy material or the monometallic material
Nitride, carbide or oxide.
8. a kind of preparation method of gate unit as claimed in claim 4, comprising:
Form lower electrode layer, OST layers, upper electrode layer；
Extraction electrode is formed on the upper electrode layer, upper electrode layer, lower electrode layer are passed through the extraction electrode and device
Storage unit, driving circuit and peripheral circuit are integrated.
9. preparation method according to claim 8 characterized by comprising
Lower electrode layer is formed, barrier layer under being formed on lower electrode layer forms OTS material layer on lower barrier layer, then in OST material
Upper barrier layer is formed on layer, forms upper electrode layer on upper barrier layer；
Extraction electrode is formed on the upper electrode layer, upper electrode layer, lower electrode layer are passed through the extraction electrode and device
Storage unit, driving circuit and peripheral circuit are integrated.
10. according to any preparation method of claim 8,9, which is characterized in that the lower electrode layer, OTS layers described, institute
The method for stating upper electrode layer and the extraction electrode includes: sputtering method, evaporation, chemical vapour deposition technique, plasma enhancing
Chemical vapour deposition technique, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atom gas phase
One of sedimentation or atomic layer deposition method.
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