CN109103281A - Solar battery and preparation method thereof - Google Patents
Solar battery and preparation method thereof Download PDFInfo
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- CN109103281A CN109103281A CN201810981750.XA CN201810981750A CN109103281A CN 109103281 A CN109103281 A CN 109103281A CN 201810981750 A CN201810981750 A CN 201810981750A CN 109103281 A CN109103281 A CN 109103281A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 34
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 239000005864 Sulphur Substances 0.000 claims description 8
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 4
- MTRXSNADWVEBGQ-UHFFFAOYSA-N [S].[Se].[Zn].[Cu] Chemical compound [S].[Se].[Zn].[Cu] MTRXSNADWVEBGQ-UHFFFAOYSA-N 0.000 claims description 3
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 6
- 238000000862 absorption spectrum Methods 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 238000000034 method Methods 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- -1 zinc oxide Chemical class 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- SEUJAMVVGAETFN-UHFFFAOYSA-N [Cu].[Zn].S=[Sn]=[Se] Chemical compound [Cu].[Zn].S=[Sn]=[Se] SEUJAMVVGAETFN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- XCZLSTLZPIRTRY-UHFFFAOYSA-N oxogallium Chemical compound [Ga]=O XCZLSTLZPIRTRY-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- PVGBHEUCHKGFQP-UHFFFAOYSA-N sodium;n-[5-amino-2-(4-aminophenyl)sulfonylphenyl]sulfonylacetamide Chemical compound [Na+].CC(=O)NS(=O)(=O)C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 PVGBHEUCHKGFQP-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The disclosure provides the preparation method of a kind of solar battery and solar battery.The solar battery includes substrate, back electrode, the first absorbed layer, buffer layer, Window layer and top electrode.The back electrode is located on the substrate.First absorbed layer is located on the back electrode, and the band gap of first absorbed layer increases along the direction gradient far from substrate.The buffer layer is located on first absorbed layer.The Window layer is located on the buffer layer.The top electrode is located in the Window layer.The disclosure not only extends the range of the absorption spectrum of the first absorbed layer, but also hole is made to be easier to transmit on the direction close to substrate, to improve the transfer efficiency of solar battery.
Description
Technical field
This disclosure relates to the preparation of technical field of solar batteries more particularly to a kind of solar battery and solar battery
Method.
Background technique
With the development of society, people gradually recognize the importance of environmental protection.Since fossil energy reserves are limited, and
Pollute environment.Therefore, fossil energy is replaced using clean energy resource, environmental quality can be improved.It is infinitely reproducible as the earth
Clean energy resource, the application of solar energy increasingly cause the concern of people, and the solar battery converted solar energy into electrical energy also obtains
It rapidly develops.
Existing solar battery is in multilayered structure, comprising: substrate/back electrode/absorbed layer/buffer layer/Window layer/top electricity
Pole.However, the solar battery has that transfer efficiency is lower.
It should be noted that information is only used for reinforcing the reason to the background of the disclosure disclosed in above-mentioned background technology part
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
A kind of preparation method for being designed to provide solar battery and solar battery of the disclosure, can be improved the sun
The transfer efficiency of energy battery.
According to one aspect of the disclosure, a kind of solar battery is provided, including substrate, back electrode, the first absorbed layer, slow
Rush layer, Window layer and top electrode.The back electrode is located on the substrate.First absorbed layer is located at the back electrode
On, and the band gap of first absorbed layer increases along the direction gradient far from the substrate.The buffer layer is located at described first
On absorbed layer.The Window layer is located on the buffer layer.The top electrode is located in the Window layer.
In a kind of exemplary embodiment of the disclosure, the material of first absorbed layer is copper indium selenide, copper indium gallium selenide, copper
Any one of indium gallium sulphur, indium sulphur, copper zinc selenium sulfur and copper-zinc-tin-selenium.
In a kind of exemplary embodiment of the disclosure, in the situation that the material of first absorbed layer is copper indium gallium selenide
Under, the content of gallium increases along the direction gradient far from substrate in first absorbed layer.
In a kind of exemplary embodiment of the disclosure, in the situation that the material of first absorbed layer is copper indium gallium selenide
Under, first absorbed layer contains vulcanized sodium or selenizing is received, and the mass fraction that the vulcanized sodium or selenizing are received is 0.05%-
0.1%.
In a kind of exemplary embodiment of the disclosure, the first absorbed layer band gap increases to 1.18eV from 1.14eV.
In a kind of exemplary embodiment of the disclosure, the solar battery further includes the second absorbed layer.Described second
Between first absorbed layer and the buffer layer, the band gap of second absorbed layer is greater than described first and absorbs absorbed layer
The band gap of layer, and it is less than the band gap of the buffer layer.
In a kind of exemplary embodiment of the disclosure, the material of second absorbed layer is Cu-In-Ga-Se-S, described the
The band gap of two absorbed layers increases along the direction gradient far from the substrate.
In a kind of exemplary embodiment of the disclosure, the content of sulphur is along far from the substrate in second absorbed layer
Direction gradient increase.
In a kind of exemplary embodiment of the disclosure, the material of the buffer layer include at least zinc oxide, zinc sulphide and
One of zinc selenide.
According to one aspect of the disclosure, a kind of preparation method of solar battery is provided, comprising: formed on a substrate
Back electrode；The first absorbed layer is formed on the back electrode, the band gap of first absorbed layer is along the direction far from the substrate
Gradient increases；Buffer layer is formed on first absorbed layer；Window layer is formed on the buffer layer；In the Window layer
Top electrode is formed, to form the solar battery.
The beneficial effect of the disclosure compared with prior art is:
The solar battery of the disclosure and the preparation method of solar battery, by making the band gap of the first absorbed layer along separate
The direction gradient of substrate increases, and not only extends the range of the absorption spectrum of the first absorbed layer, but also makes hole close to substrate
Direction on be easier to transmit, to improve the transfer efficiency of solar battery.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The disclosure can be limited.
Detailed description of the invention
It is described in detail its exemplary embodiment by referring to accompanying drawing, the above and other feature and advantage of the disclosure will become
It obtains more obvious.It should be evident that the accompanying drawings in the following description is only some embodiments of the present disclosure, it is common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the schematic diagram of the solar battery of disclosure embodiment；
Fig. 2 is the schematic diagram of the band gap of the solar battery of disclosure embodiment；
Fig. 3 is the flow chart of the preparation method of the solar battery of disclosure embodiment.
In figure: 1, substrate；2, separation layer；3, back electrode；4, the first absorbed layer；5, the second absorbed layer；6, buffer layer；7, window
Mouth layer；8, anti-reflection layer；9, top electrode.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will comprehensively and
Completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described feature, structure or characteristic
It can be incorporated in any suitable manner in one or more embodiments.In the following description, it provides many specific thin
Section fully understands embodiment of the present disclosure to provide.It will be appreciated, however, by one skilled in the art that this can be practiced
Disclosed technical solution, or can be using other methods, material, dress without one or more in the specific detail
It sets.In other cases, known solution is not shown in detail or describes to avoid fuzzy all aspects of this disclosure.Phase in figure
Same appended drawing reference indicates same or similar structure, thus the detailed description that will omit them.
Term "one", " one ", "the" and " described " to indicate there are one or more elements/component part/etc.；With
Language " comprising ", " having " and " being equipped with " are to indicate the open meaning being included and refer in addition to that lists wants
Element/component part/also may be present except waiting other element/component part/etc..
Disclosure embodiment provides a kind of solar battery.As shown in Figure 1, the solar battery may include substrate 1,
Back electrode 3, the first absorbed layer 4, buffer layer 6, Window layer 7 and top electrode 9.Wherein:
Back electrode 3 can be located on substrate 1.First absorbed layer 4 can be located on back electrode 3, and the band of the first absorbed layer 4
Gap increases along the direction gradient far from substrate 1.Buffer layer 6 can be located on the first absorbed layer 4.Window layer 7 can be located at buffering
On layer 6.Top electrode 9 can be located in Window layer 7.
The solar battery of disclosure embodiment is by making the band gap of the first absorbed layer 4 along the direction ladder far from substrate 1
Degree increase, not only extend the range of the absorption spectrum of the first absorbed layer 4, and make hole close to substrate 1 direction on more
Easily transmission, to improve the transfer efficiency of solar battery.
Each section of the solar battery of disclosure embodiment is described in detail below:
Substrate 1 is the carrier of solar battery, and the mechanical strength of solar battery can be improved.The material of the substrate 1 can
Think glass, metal or polymer.Wherein, which can be soda-lime glass, solar energy float glass, iron glass etc..The gold
Belong to be stainless steel, aluminium, molybdenum, copper etc..The polymer can be polyimides, pet resin etc..
Back electrode 3 is located between substrate 1 and the first absorbed layer 4, and can be as the extraction electrode of solar battery.The back
Electrode 3 can be molybdenum electrode.Since the work function of metal molybdenum is higher, so that it is good to be capable of forming back electrode 3 with the first absorbed layer 4
Good Ohmic contact enhances electric conductivity；Simultaneously, additionally it is possible to make back electrode 3 that there is stable physics and chemical property, improve resistance to
Corrosive nature.The thickness of the molybdenum electrode can be 200-300nm, such as 200nm, 210nm, 220nm, 250nm, 280nm,
300nm etc..The molybdenum electrode can be prepared by magnetron sputtering technique, it is of course also possible to use prepared by other techniques.In molybdenum electrode
After formation, H can also be used2Se is heat-treated molybdenum electrode, so that the surface of molybdenum electrode forms one layer of MoSe2, can be effective
Improve the contact performance between molybdenum electrode and the first absorbed layer 4.In disclosure other embodiment, which can be with
It is prepared by other materials, this will not be detailed here.
First absorbed layer 4 can play the role of P-type semiconductor.The material of first absorbed layer 4 can be copper indium selenide, copper
Any one of indium gallium selenium, copper indium gallium sulphur, indium sulphur, copper zinc selenium sulfur and copper-zinc-tin-selenium, it is, of course, also possible to be copper-zinc-tin-sulfur, copper
Zinc tin sulfur selenium etc..The thickness of first absorbed layer 4 can be 1.5-2 μm, such as 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μ
M, 2 μm etc..For example, the material of first absorbed layer 4 can not only improve solar energy for copper indium gallium selenide with a thickness of 1.8 μm
The transfer efficiency of battery, additionally it is possible to reduce the manufacturing cost of battery.The band gap L of first absorbed layer 41Along the side far from substrate 1
Increase to gradient.Specifically, when the material of the first absorbed layer 4 is copper indium gallium selenide, it can be by making gallium in the first absorbed layer 4
Content increase along the direction gradient far from substrate 1, and then make the band gap L of the first absorbed layer 41Along the direction ladder far from substrate 1
Degree increases.It wherein, is m in the quality of gallium1, and the quality of indium is m2When, the content of the gallium can be m1/(m2+m1), meanwhile,
m1/(m2+m1) along when increasing to 30% from 20% gradient far from the direction of substrate 1, the band gap L of the first absorbed layer 41Along far from base
The direction of plate 1 increases to 1.18eV from 1.14eV gradient.In addition, first absorbed layer 4 can carried on the back by sputtering and selenization technique method
It is formed on electrode 3, but not limited to this, it can also be formed on back electrode 3 by polynary coevaporation method.For example, material is
First absorbed layer 4 of copper indium gallium selenide is formed by polynary coevaporation, specifically: first in 3 surface of back electrode deposition more than chemistry
The copper of component ratio, to form the CIGS thin-film of copper-rich, then deposition obtains the CIGS thin-film of poor copper.Wherein,
During preparing the first absorbed layer 4, sodium element can be adulterated, to promote the efficiency of solar battery.In one embodiment,
When the material of the first absorbed layer 4 is copper indium gallium selenide, which contains the selenizing that mass fraction is 0.05%-0.1% and receives, example
Such as 0.05%, 0.06%, 0.07%, 0.09%.It is copper indium gallium selenide in the material of the first absorbed layer 4 in another embodiment
When, which contains the vulcanized sodium that mass fraction is 0.05%-0.1%, such as 0.05%, 0.07%, 0.08%, 0.09%
Deng.
Buffer layer 6 is between the first absorbed layer 4 and Window layer 7.The material of buffer layer 6 includes at least zinc oxide, vulcanization
One of zinc and zinc selenide.Wherein, the material of buffer layer 6 can only include a kind of compound.Certainly, the material of buffer layer 6
It can only include two kinds of compounds.Two kinds of compounds can be zinc oxide and zinc sulphide, or zinc oxide and zinc selenide,
It can also be zinc sulphide and zinc selenide.Further, the material of buffer layer 6 may include three kinds of compounds, such as zinc oxide, vulcanization
Zinc and zinc selenide.By adjusting the component of buffer layer 6, so as to adjust the band gap of buffer layer 6, and then buffering can be improved
Layer 6 and the contact of the first absorbed layer 4, and avoid the use of cadmium element, with good environmental protection benefit.One embodiment party
In formula, the material of buffer layer 6 includes zinc oxide and zinc selenide, and when the mass fraction of zinc oxide and zinc selenide is respectively 50%,
The band gap L of buffer layer 63For 2.9eV.In another embodiment, the material of buffer layer 6 includes zinc oxide and zinc sulphide, and in oxygen
When the mass fraction of change zinc and zinc sulphide is respectively 50%, the band gap L of buffer layer 63For 3.35eV.The thickness of the buffer layer 6 can be with
For 30-40nm, such as 31nm, 32nm, 35nm, 37nm, 39nm, 40nm etc..The buffer layer 6 can be prepared by chemical water bath
It forms, but not limited to this, can also be prepared by magnetron sputtering method, it is of course also possible to be prepared by other methods
At this will not be detailed here.In addition, buffer layer 6 after the completion of preparation, can also be heat-treated, further to improve film layer knot
Structure.
Window layer 7 can play the role of N-type semiconductor.The material of the Window layer 7 can be Al-Doped ZnO, mix gallium oxygen
Change zinc or boron-doping zinc oxide, but not limited to this, it can also be fluorine-doped tin oxide, hydrogen loading zinc oxide, tin-doped indium oxide etc..Citing and
The material of speech, the Window layer 7 is Al-Doped ZnO, thus make the light transmission rate with higher of top electrode 9 and higher electric conductivity,
And then the incidence of external light source and the transmission of light induced electron is made to provide convenience.In addition, the Window layer 7 can pass through magnetron sputtering method
It is prepared, it is of course also possible to be prepared by Metal Organic Chemical Vapor Deposition method.
Top electrode 9 is the another extraction electrode of solar battery.The material of the top electrode 9 can be aluminium, it is of course also possible to
For other conductive materials such as copper.The structure of the top electrode 9 can be in multilayered structure, such as three-decker.The three-decker can be with
Including the first metal nickel layer in Window layer 7, the metallic aluminum on the first metal nickel layer and it is located at metallic aluminum
On the second metal nickel layer.The top electrode 9 can also be double-layer structure, which may include being located in Window layer 7
First metal nickel layer, the metallic aluminum on the first metal nickel layer.The top electrode 9 can also be in wire-shaped.In addition, the top
Electrode 9 can be prepared by silk-screen printing, it is of course also possible to prepare otherwise.
The solar battery of disclosure embodiment further includes the second absorbed layer 5.As depicted in figs. 1 and 2, second absorption
Layer 5 is between the first absorbed layer 4 and buffer layer 6, the band gap L of second absorbed layer 52Greater than the band gap L of the first absorbed layer 41,
And it is less than the band gap L of buffer layer 63, to reduce the band gap L of the first absorbed layer 41With the band gap L of buffer layer 63Discontinuity.?
It, can be by with the thio selenium for replacing 4 surface of the first absorbed layer, with forming material when the material of first absorbed layer 4 is copper indium gallium selenide
For the second absorbed layer 5 of Cu-In-Ga-Se-S, and the band gap L of second absorbed layer 52Increase along the direction gradient far from substrate 1.Tool
For body, which can be by increasing the content of sulphur along the direction gradient far from substrate 1, and then makes the second suction
Receive the band gap L of layer 52Increase along the direction gradient far from substrate 1.Wherein, when the content of sulphur increases to 20% from 0 gradient, the
The band gap L of two absorbed layers 521.4eV is increased to from 1.18eV gradient.In addition, second absorbed layer 5 with a thickness of 40-50nm, example
Such as 40nm, 43nm, 44nm, 47nm, 48nm, 50nm.
Solar battery in disclosure embodiment further includes separation layer 2.The separation layer 2 is located at back electrode 3 and substrate 1
Between, to prevent 1 impurity of substrate from spreading to back electrode 3.The separation layer 2 can be prepared by silicon nitride, to enhance separation layer 2
To the adhesive force of substrate 1, separation layer 2 is avoided to remove from substrate 1.In disclosure other embodiment, which can be with
It is prepared by other materials.The thickness of the separation layer 2 can be 100-200nm, such as 100nm, 120nm, 140nm,
160nm, 180nm, 200nm etc..In addition, the separation layer 2 can be prepared by way of magnetron sputtering, it is of course also possible to
It prepares, will not enumerate herein otherwise.
Solar battery in disclosure embodiment can also include anti-reflection layer 8.The anti-reflection layer 8 be located at Window layer 7 with
Between top electrode 9, the sunlight loss due to caused by reflection for being irradiated in battery surface can be reduced.The material of the anti-reflection layer 8
Material can be bifluoride magnesium, and to improve the translucency of anti-reflection layer 8, but not limited to this, or other translucency are preferable
Material is no longer stated one by one herein.The thickness of the anti-reflection layer 8 can be 80-100nm, such as 80nm, 85nm, 90nm, 93nm or
100nm, but not limited to this, can also be other numerical value, specifically can be depending on the wavelength of the sunlight reflected.In addition,
The anti-reflection layer 8 can be prepared by way of vapor deposition, it is of course also possible to be prepared by way of magnetron sputtering.
Disclosure embodiment also provides a kind of preparation method of solar battery.As shown in figure 3, the preparation method can be with
Including step S11-S14, in which:
Step S11, back electrode can be formed on substrate.
Step S12, the first absorbed layer can be formed on back electrode, and the band gap of the first absorbed layer is along the side far from substrate
Increase to gradient.
Step S13, buffer layer can be formed on the first absorbed layer.
Step S14, Window layer can be formed on the buffer layer.
Step S15, top electrode can be formed, in Window layer to form solar battery.
Solar battery prepared by disclosure embodiment is identical with the solar battery in above embodiment, because
This, has the same effect, and details are not described herein.
Those skilled in the art will readily occur to other embodiments of the disclosure after considering specification and practice.This
Application is intended to cover any variations, uses, or adaptations of the disclosure, these variations, uses, or adaptations are abided by
Follow the general principle of the disclosure and including common knowledge or conventional techniques in the art.Description and embodiments
It is considered only as illustratively, the true scope and spirit of the disclosure are pointed out by the attached claims.
Claims (10)
1. a kind of solar battery characterized by comprising
Substrate；
Back electrode is located on the substrate；
First absorbed layer is located on the back electrode, and the band gap of first absorbed layer is along the direction ladder far from the substrate
Degree increases；
Buffer layer is located on first absorbed layer；
Window layer is located on the buffer layer；
Top electrode is located in the Window layer.
2. solar battery according to claim 1, which is characterized in that the material of first absorbed layer be copper indium selenide,
Any one of copper indium gallium selenide, copper indium gallium sulphur, indium sulphur, copper zinc selenium sulfur and copper-zinc-tin-selenium.
3. solar battery according to claim 2, which is characterized in that first absorbed layer material be copper and indium gallium
In the case of selenium, the content of gallium increases along the direction gradient far from substrate in first absorbed layer.
4. solar battery according to claim 2, which is characterized in that first absorbed layer material be copper and indium gallium
In the case of selenium, first absorbed layer contains vulcanized sodium or selenizing is received, and the mass fraction that the vulcanized sodium or selenizing are received is
0.05%-0.1%.
5. solar battery according to claim 1, which is characterized in that the first absorbed layer band gap increases from 1.14eV
To 1.18eV.
6. solar battery according to claim 1, which is characterized in that the solar battery further include:
Second absorbed layer, between first absorbed layer and the buffer layer, the band gap of second absorbed layer is greater than institute
The band gap of the first absorbed layer is stated, and is less than the band gap of the buffer layer.
7. solar battery according to claim 6, which is characterized in that the material of second absorbed layer is copper indium gallium selenide
The band gap of sulphur, second absorbed layer increases along the direction gradient far from the substrate.
8. solar battery according to claim 7, which is characterized in that the content of sulphur is along separate in second absorbed layer
The direction gradient of the substrate increases.
9. solar battery according to claim 1, which is characterized in that the material of the buffer layer includes at least oxidation
One of zinc, zinc sulphide and zinc selenide.
10. a kind of preparation method of solar battery characterized by comprising
Back electrode is formed on substrate；
The first absorbed layer is formed on the back electrode, the band gap of first absorbed layer is along the direction gradient far from the substrate
Increase；
Buffer layer is formed on first absorbed layer；
Window layer is formed on the buffer layer；
Top electrode is formed in the Window layer, to form the solar battery.
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| CN111029413A (en) * | 2019-10-28 | 2020-04-17 | 珠海格力电器股份有限公司 | Absorption layer structure, thin film solar cell and preparation method thereof |
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