CN109103268A - 一种GaN基p-i-n紫外探测器结构及制备方法 - Google Patents
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Abstract
本发明公布了一种GaN基p‑i‑n紫外探测器结构及制备方法，GaN基p‑i‑n紫外探测器结构包括图形化蓝宝石衬底，非掺杂GaN缓冲层，N型欧姆接触层，吸收层，p型梯度掺杂层，p型接触层，n型接触层及SiO2层。GaN基p‑i‑n紫外探测器制备方法：首先在图形化蓝宝石衬底上获得非掺杂GaN缓冲层，N型欧姆接触层在非掺杂GaN缓冲层上，接着蒸镀n型接触层，在退火工艺之前先在图形化蓝宝石衬底表面进行淀积石墨处理，接着进行退火，在台面上淀积p型接触层，最后在整个样品表面淀积了一层300nm厚的SiO2层作为钝化层。本发明益处在于：在退火工艺之前进行石墨淀积，作为保护膜可以防止器件表面形貌退化；退火完成后，在样品表面淀积SiO2层作为钝化层，可以提高光电转换效率。
Description
技术领域
本发明涉及紫外探测领域，具体涉及一种GaN基p-i-n紫外探测器及制备方法。
背景技术
紫外探测技术在军事、天文、农业、生物检测等领域均有广泛应用，相比激光探测技术和红外探测技术优势更大，应用范围更广，在推动国民经济的发展中起到至关重要的作用。
紫外探测技术的核心部件是紫外探测器，紫外探测器性能指标直接影响紫外探测技术，现有技术通常采用先进的半导体材料作为制备器件，半导体紫外探测器质量轻、能耗低、效率高，具有传统技术所不具备的优势，因此有关半导体紫外探测器一直是紫外探测器研究领域中最受青睐和关注的重点之一。
发明内容
为提供性能优异，质量可靠的GaN基p-i-n紫外探测器，一种GaN基p-i-n紫外探测器结构，包括：图形化蓝宝石衬底，非掺杂GaN缓冲层，N型欧姆接触层，吸收层，p型梯度掺杂层，p型接触层，n型接触层及SiO2层，所述图形化蓝宝石衬底在器件的最下方，所述非掺杂GaN缓冲层布置在图形化蓝宝石衬底和N型欧姆接触层之间，所述N型欧姆接触层布置在非掺杂GaN缓冲层和吸收层之间，所述吸收层布置在N型欧姆接触层和p型梯度掺杂层之间，所述p型梯度掺杂层布置在吸收层和p型接触层之间，所述p型接触层布置在p型梯度掺杂层上方，所述n型接触层布置在非掺杂GaN缓冲层上方，所述SiO2层布置在整个器件表面。
所述p型接触层由Ni/Au材料构成。
所述n型接触层由Ti/Al/Ni/Au材料构成。
所述GaN基p-i-n紫外探测器的制备方法如下：首先通过金属有机物化学气相淀积技术在图形化蓝宝石衬底上获得非掺杂GaN缓冲层；将N型欧姆接触层蒸镀在非掺杂GaN缓冲层上；将吸收层蒸镀在N型欧姆接触层上；将p型梯度掺杂层蒸镀在吸收层上；接着再采取电子束蒸发技术将n型接触层蒸镀在非掺杂GaN缓冲层上；在退火工艺之前先在图形化蓝宝石衬底表面进行淀积石墨处理，接着进行退火，把器件置于充满N2氛围的快速热退火炉中，在500℃条件下退火2分钟，在台面上淀积p型接触层，在300℃空气氛围中退火6分钟，最后在整个样品表面淀积了一层300nm厚的SiO2层。
进一步的，所述金属有机物化学气相淀积技术是一种利用有机金属热分解反应进行气相外延生长薄膜的化学气相沉积技术。
进一步的，所述电子束蒸发技术即在高真空的状态下利用电子束对所需蒸镀的材料加热至熔化、蒸发，使其附着在基座表面的技术。
进一步的，所述石墨可以作为保护膜，防止器件表面形貌退化。
进一步的，所述SiO2层作为钝化层，可以提高光电转化效率。
进一步的，所述器件台面倾角为5°。
本发明的有益效果：(1)在退火工艺之前进行石墨淀积，作为保护膜可以防止器件表面形貌退化；(2)退火完成后，在样品表面淀积SiO2层作为钝化层，可以提高光电转换效率。
附图说明
图1是本发明的结构示意图。
图中：1-图形化蓝宝石衬底，2-非掺杂GaN缓冲层，3-N型欧姆接触层，4-吸收层，5-p型梯度掺杂层，6-p型接触层，7-n型接触层，8-SiO2层。
具体实施方式
下面结合附图与具体实例对本发明进行详细说明。
如图1所述，一种GaN基p-i-n紫外探测器，包括图形化蓝宝石衬底(1)，非掺杂GaN缓冲层(2)，N型欧姆接触层(3)，吸收层(4)，p型梯度掺杂层(5)，p型接触层(6)，n型接触层(7)及SiO2层(8)，所述图形化蓝宝石衬底(1)在器件的最下方，所述非掺杂GaN缓冲层(2)布置在图形化蓝宝石衬底(1)和N型欧姆接触层(3)之间，所述N型欧姆接触层(3)布置在非掺杂GaN缓冲层(2)和吸收层(4)之间，所述吸收层(4)布置在N型欧姆接触层(3)和p型梯度掺杂层(5)之间，所述p型梯度掺杂层(5)布置在吸收层(4)和p型接触层(6)之间，所述p型接触层(6)布置在p型梯度掺杂层(5)上方，所述n型接触层(7)布置在非掺杂GaN缓冲层(2)上方，所述SiO2层(8)布置在整个器件表面。
所述p型接触层(6)由Ni/Au材料构成。
所述n型接触层(7)由Ti/Al/Ni/Au材料构成。
本发明所采用GaN基p-i-n紫外探测器的制备方法：首先通过金属有机物化学气相淀积技术在图形化蓝宝石衬底(1)上获得非掺杂GaN缓冲层(2)；将N型欧姆接触层(3)蒸镀在非掺杂GaN缓冲层(2)上；将吸收层(4)蒸镀在N型欧姆接触层(3)上；将p型梯度掺杂层(5)蒸镀在吸收层(4)上；接着再采取电子束蒸发技术将n型接触层(7)蒸镀在非掺杂GaN缓冲层(2)上；在退火工艺之前先在图形化蓝宝石衬底表面(1)进行淀积石墨处理，接着进行退火，把器件置于充满N2氛围的快速热退火炉中，在500℃条件下退火2分钟，在台面上淀积p型接触层(6)，在300℃空气氛围中退火6分钟，最后在整个样品表面淀积了一层300nm厚的SiO2层(8)。
Claims (4)
1.一种GaN基p-i-n紫外探测器，其特征在于：包括图形化蓝宝石衬底(1)，非掺杂GaN缓冲层(2)，N型欧姆接触层(3)，吸收层(4)，p型梯度掺杂层(5)，p型接触层(6)，n型接触层(7)及SiO2层(8)，所述图形化蓝宝石衬底(1)在器件的最下方，所述非掺杂GaN缓冲层(2)布置在图形化蓝宝石衬底(1)和N型欧姆接触层(3)之间，所述N型欧姆接触层(3)布置在非掺杂GaN缓冲层(2)和吸收层(4)之间，所述吸收层(4)布置在N型欧姆接触层(3)和p型梯度掺杂层(5)之间，所述p型梯度掺杂层(5)布置在吸收层(4)和p型接触层(6)之间，所述p型接触层(6)布置在p型梯度掺杂层(5)上方，所述n型接触层(7)布置在非掺杂GaN缓冲层(2)上方，所述SiO2层(8)布置在整个器件表面。
2.如权利要求1所述一种GaN基p-i-n紫外探测器，其特征在于：所述p型接触层(6)由Ni/Au材料构成。
3.如权利要求1所述一种GaN基p-i-n紫外探测器，其特征在于：所述n型接触层(7)由Ti/Al/Ni/Au材料构成。
4.一种GaN基p-i-n紫外探测器的制备方法，其特征在于：首先通过金属有机物化学气相淀积技术在图形化蓝宝石衬底(1)上获得非掺杂GaN缓冲层(2)；将N型欧姆接触层(3)蒸镀在非掺杂GaN缓冲层(2)上；将吸收层(4)蒸镀在N型欧姆接触层(3)上；将p型梯度掺杂层(5)蒸镀在吸收层(4)上；接着再采取电子束蒸发技术将n型接触层(7)蒸镀在非掺杂GaN缓冲层(2)上；在退火工艺之前先在图形化蓝宝石衬底表面(1)进行淀积石墨处理，接着进行退火，把器件置于充满N2氛围的快速热退火炉中，在500℃条件下退火2分钟，在台面上淀积p型接触层(6)，在300℃空气氛围中退火6分钟，最后在整个样品表面淀积了一层300nm厚的SiO2层(8)。
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| CN114823982A (zh) * | 2022-05-12 | 2022-07-29 | 深圳大学 | 一种GaN-GaON紫外-深紫外宽波段探测器制备方法 |
| CN114937714A (zh) * | 2022-06-14 | 2022-08-23 | 西安理工大学 | 大动态响应范围紫外光电探测器及其制作方法 |
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| CN106960887A (zh) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | 一种铝镓氮基日盲紫外探测器及其制备方法 |
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| US20090057706A1 (en) * | 2007-09-04 | 2009-03-05 | Philip Chan | Set of ohmic contact electrodes on both p-type and n-type layers for gan-based led and method for fabricating the same |
| JP2009170610A (ja) * | 2008-01-15 | 2009-07-30 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子およびその製造方法 |
| CN102593233A (zh) * | 2012-03-19 | 2012-07-18 | 中国科学院上海技术物理研究所 | 基于图形化蓝宝石衬底的GaN基PIN探测器及制备方法 |
| CN104362213A (zh) * | 2014-09-11 | 2015-02-18 | 东南大学 | 一种铝镓氮基日盲紫外探测器及其制备方法 |
| CN106960887A (zh) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | 一种铝镓氮基日盲紫外探测器及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114823982A (zh) * | 2022-05-12 | 2022-07-29 | 深圳大学 | 一种GaN-GaON紫外-深紫外宽波段探测器制备方法 |
| CN114823982B (zh) * | 2022-05-12 | 2024-03-19 | 深圳大学 | 一种GaN-GaON紫外-深紫外宽波段探测器制备方法 |
| CN114937714A (zh) * | 2022-06-14 | 2022-08-23 | 西安理工大学 | 大动态响应范围紫外光电探测器及其制作方法 |
| CN114937714B (zh) * | 2022-06-14 | 2024-05-03 | 西安理工大学 | 大动态响应范围紫外光电探测器及其制作方法 |
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