CN109087873B - Detection substrate, detection device and detection equipment - Google Patents
Detection substrate, detection device and detection equipment Download PDFInfo
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- CN109087873B CN109087873B CN201810922499.XA CN201810922499A CN109087873B CN 109087873 B CN109087873 B CN 109087873B CN 201810922499 A CN201810922499 A CN 201810922499A CN 109087873 B CN109087873 B CN 109087873B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention provides a detection substrate, a detection device and detection equipment, and relates to the technical field of process monitoring. The detection substrate comprises a thin film transistor, a positive electrode wire, a positive electrode, a negative electrode wire and a negative electrode; the thin film transistor comprises a grid, a first pole and a second pole; the positive electrode wire is connected with a first electrode of the thin film transistor; the positive electrode is connected with the second pole of the thin film transistor; the negative electrode is connected to the negative line. In the embodiment of the present invention, when the detection substrate is placed in an ionizable reaction solution or gas, the positive electrode and the negative electrode are in contact with the reaction solution or gas, and when the thin film transistor is turned on, a current may be input to the positive electrode line, so that the current may pass through the reaction solution or gas and may be finally output from the negative electrode line. The reaction rate in the processing process can be determined by detecting the current output by the cathode wire in the processing process, so that the reaction rate can be adjusted, the defect of devices caused by the processing technology is avoided, and the processing resources can be saved.
Description
Technical Field
The invention relates to the technical field of process monitoring, in particular to a detection substrate, a detection device and detection equipment.
Background
In the processes of etching, magnetron sputtering, chemical vapor deposition and the like, the reaction rate of gas or solution has very important significance on the yield of devices. For example, in the process of preparing the display panel by the wet etching process, if the reaction rates of the etching solution and different regions of the material layer are different, the uniformity of the display panel is reduced, and the display of the display panel is poor. Therefore, in the processing technology, the reaction rate of gas or solution is reasonably controlled, and the yield of devices can be effectively improved.
In practical applications, after a device is obtained by processes such as etching, magnetron sputtering, chemical vapor deposition, and the like, the device is usually subjected to a performance test, so as to determine whether the device is qualified in performance. However, after the device is manufactured, the performance test is performed, so that on one hand, the cause of the poor problem cannot be accurately located, and on the other hand, when the device is poor due to the reaction rate, the reaction rate cannot be timely adjusted, so that a large amount of processing resources are wasted.
Disclosure of Invention
The invention provides a detection substrate, a detection device and detection equipment, which are used for solving the problem that the reaction rate cannot be adjusted in real time in the existing etching, magnetron sputtering, chemical vapor deposition and other processes, so that the defect of a device caused by a processing process cannot be avoided.
In order to solve the above problems, the present invention discloses a detection substrate, which includes detection units, the detection units including:
a thin film transistor including a gate electrode, a first electrode and a second electrode;
a positive electrode line connected to a first electrode of the thin film transistor;
a positive electrode connected to a second pole of the thin film transistor;
a negative electrode line;
a negative electrode connected to the negative line.
Optionally, the positive electrode line, the negative electrode line, the first electrode of the thin film transistor, and the second electrode are disposed at the same layer.
Optionally, passivation layers are covered on at least the positive electrode line, the negative electrode line, the first electrode and the second electrode of the thin film transistor, the positive electrode and the negative electrode are both formed on the passivation layers, the positive electrode is connected with the second electrode of the thin film transistor through a via hole in the passivation layers, and the negative electrode is connected with the negative electrode line through a via hole in the passivation layers.
Optionally, the thickness of the positive electrode is greater than or equal to 0.03 micrometers and less than or equal to 1 micrometer.
Optionally, the thickness of the negative electrode is greater than or equal to 0.03 micrometers and less than or equal to 1 micrometer.
Optionally, the material of the positive electrode or the negative electrode is silver, platinum, gold, or graphite.
In order to solve the above problems, the present invention further discloses a detection device, which includes the above detection substrate, and a control module;
the control module is respectively connected with the grid electrode of the thin film transistor, the positive electrode wire and the negative electrode wire and used for driving the grid electrode, inputting current to the positive electrode wire and collecting current output by the negative electrode wire.
Optionally, the detection substrate includes detection units in each preset region, and the detection units in each preset region are arranged in an array; the positive electrode lines of the detection units in the same row in the same preset area are shared or interconnected, the negative electrode lines of the detection units in the same row in the same preset area are shared or interconnected, and the grids of the thin film transistors of the detection units in the same row are sequentially connected through grid lines; and the control module corresponding to the preset area is connected with the grid lines of all the detection units in the preset area, and the positive electrode lines and the negative electrode lines of all the detection units.
Optionally, the control module comprises:
the grid driving unit is connected with the grid lines of the detection units in each row in the corresponding preset area and is used for driving the thin film transistor grids of the detection units in each row in the corresponding preset area;
the current input unit is connected with the positive electrode line of each row of detection units in the corresponding preset area and is used for inputting current to the positive electrode line of each row of detection units in the corresponding preset area;
the current acquisition unit is connected with the negative electrode line of each row of detection units in the corresponding preset region and is used for acquiring the current output by the negative electrode line of each row of detection units in the corresponding preset region;
the data transmission unit is connected with external data processing equipment and used for transmitting the acquired current to the data processing equipment;
and the power supply is respectively connected with the grid driving unit, the current input unit, the current acquisition unit and the data transmission unit and is used for supplying power to the grid driving unit, the current input unit, the current acquisition unit and the data transmission unit.
In order to solve the problems, the invention also discloses detection equipment which comprises the detection device.
Compared with the prior art, the invention has the following advantages:
in an embodiment of the present invention, each detection unit in the detection substrate includes a thin film transistor, a positive electrode line, a positive electrode, a negative electrode line, and a negative electrode, wherein the positive electrode line is connected to a first pole of the thin film transistor, the positive electrode line is connected to a second pole of the thin film transistor, and the negative electrode line is connected to the negative electrode line. When the detection substrate is placed in an ionizable reaction solution or gas, the positive electrode and the negative electrode are in contact with the reaction solution or gas, and when the thin film transistor is turned on, current can be input to the positive line, so that current can pass through the reaction solution or gas in contact with the positive and negative electrodes, and finally be output from the negative line. The reaction rate in the processing process can be determined by detecting the current output by the cathode wire in the processing process, so that the reaction rate can be adjusted, the defect of devices caused by the processing technology is avoided, and the processing resources can be saved.
Drawings
FIG. 1 is a schematic cross-sectional view of a detecting unit according to a first embodiment of the present invention;
FIG. 2 is a top view of a detecting unit according to a first embodiment of the present invention;
FIG. 3 is a schematic view of a detecting apparatus according to a second embodiment of the present invention;
fig. 4 shows a block diagram of a control module according to a second embodiment of the present invention;
fig. 5 is a schematic diagram illustrating the detection of the conductive performance of the etching solution by the detection device according to the second embodiment of the present invention.
Description of reference numerals:
10-thin film transistor, substrate 101, grid 102, insulating layer 103, active layer 104, barrier layer 105, first pole 106, second pole 107, positive pole line 20, negative pole line 30, positive pole 40, negative pole 50, passivation layer 60, 70-grid line, 01-detection substrate, 02-control module, 021-grid drive unit, 022-current input unit, 023-current acquisition unit, 024-data transmission unit, 025-power supply, 100-fixing device, 200-etching liquid supply device, 300-support device, 400-spray nozzle, 500-etching liquid, 600-detection device and 700-transmission roller.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
The first embodiment of the invention provides a detection substrate which comprises detection units, wherein each detection unit comprises a thin film transistor, a positive electrode line, a positive electrode, a negative electrode line and a negative electrode, the thin film transistor comprises a grid, a first pole and a second pole, the positive electrode line is connected with the first pole of the thin film transistor, the positive electrode is connected with the second pole of the thin film transistor, and the negative electrode is connected with the negative electrode line.
Fig. 1 shows a cross-sectional schematic view of a detection unit according to a first embodiment of the present invention, referring to fig. 1, a thin film transistor may be an etching blocking structure in a bottom gate structure, and accordingly, the thin film transistor may specifically include a substrate 101, a gate electrode 102 formed on the substrate 101, an insulating layer 103 covering the gate electrode 102, an active layer 104 formed on the insulating layer 103, a blocking layer 105 covering the active layer 104, and a first pole 106 and a second pole 107 disposed on the blocking layer 105 in the same layer, where the first pole 106 and the second pole 107 may be respectively connected to the active layer 104 through a via hole on the blocking layer 105. In practical applications, the first pole 106 may be a source and the second pole 107 may be a drain.
Referring to fig. 1, the positive electrode line 20, the negative electrode line 30, the first electrode 106 of the thin film transistor, and the second electrode 107 may be disposed in the same layer. In practical application, the positive electrode line 20, the negative electrode line 30, the first electrode 106 and the second electrode 107 of the thin film transistor can all be made of the same material, so that the positive electrode line 20, the negative electrode line 30, the first electrode 106 and the second electrode 107 can be formed in the same layer by a one-step composition process, thereby reducing the preparation steps of the detection substrate and improving the preparation efficiency.
Of course, in practical applications, the positive electrode line 20 or the negative electrode line 30 may be disposed in different layers from the first and second poles 106 and 107. For example, the first pole 106, the second pole 107 and the negative pole 30 may be formed in the same layer by a first patterning process, and then the positive pole 20 may be formed by a second patterning process, and the orthographic projection of the positive pole 20 on the substrate 101 may cover the orthographic projection of the first pole 106 on the substrate 101, so that the connection between the positive pole 20 and the first pole 106 may also be achieved. For another example, the negative electrode line 30 may be disposed in the same layer as the active layer 104, and the positive electrode line 20, the first pole 106, and the second pole 107 may be disposed in the same layer. In the embodiment of the present invention, whether the positive line 20, the negative line 30, the first pole 106, and the second pole 107 are disposed in the same layer is not particularly limited, as long as the positive line is connected to the first pole of the thin film transistor, and the negative line is connected to the second pole of the thin film transistor.
Further, as shown in fig. 1, at least the positive line 20, the negative line 30, the first pole 106 and the second pole 107 of the thin film transistor are covered with the passivation layer 60, that is, the passivation layer 60 may be formed on the detection substrate after the positive line 20, the negative line 30, the first pole 106 and the second pole 107 are formed. Both the positive electrode 40 and the negative electrode 50 may be formed on the passivation layer 60, and the positive electrode 40 may be connected to the second electrode 107 of the thin film transistor through a via hole on the passivation layer 60, and the negative electrode 50 may be connected to the negative line 30 through a via hole on the passivation layer 60. The passivation layer 60 may cover other structures on the detection substrate except the positive and negative electrodes 40 and 50 such that the solution or gas to be detected contacts only the positive and negative electrodes 40 and 50 except the passivation layer 60, and thus the passivation layer 60 can prevent the other structures in the detection substrate from reacting with the solution or gas to be detected.
In practical applications, the thickness of the positive electrode 40 may be greater than or equal to 0.03 micrometers and less than or equal to 1 micrometer, and the thickness of the negative electrode 50 may be greater than or equal to 0.03 micrometers and less than or equal to 1 micrometer.
In addition, the material of the positive electrode 40 or the negative electrode 50 may be an inert material such as silver, platinum, gold, or graphite, so that neither the positive electrode nor the negative electrode reacts with the solution or gas to be detected, so that the detection substrate can be reused after being washed clean.
In addition, in practical application, the cross-sectional shape of the positive electrode or the negative electrode parallel to the passivation layer may be square, rectangular, or the like, or the positive electrode may be surrounded by a U-shaped positive electrode, or the positive electrode may be surrounded by a ring-shaped negative electrode, or the like, as long as it is ensured that the positive electrode is not connected with the negative electrode, so that the positive electrode and the negative electrode can be connected through the solution or gas to be detected only during detection, thereby realizing current conduction.
In practical applications, the gate electrode 102, the first electrode 106, and the second electrode 107 of the thin film transistor may be made of a composite material such as MoNb/Cu or Mo/Al/Mo, the insulating layer 103 may be made of at least one of SiNx, SiOx, and SiNO, the active layer 104 may be made of IGZO (Indium Gallium Zinc Oxide ), ITZO (Indium Tin Zinc Oxide, Indium Tin Zinc Oxide), or IZO (Indium Zinc Oxide), the barrier layer 105 may be made of SiOx, and the passivation layer 60 may be made of at least one of SiNx, SiOx, and SiNO, which is not particularly limited in the embodiments of the present invention.
It should be noted that, in practical application, the thin film transistor may be not only an etching blocking structure in the bottom gate structure, but also a back channel etching structure in the bottom gate structure, or a top gate structure, which is not specifically limited in this embodiment of the present invention. For the thin film transistors with different structures, when the detection substrate is prepared, the positive electrode wire is connected with the first pole of the thin film transistor, the positive electrode is connected with the second pole of the thin film transistor, and the negative electrode is connected with the negative electrode wire. The positive electrode wire, the negative electrode wire, the first pole and the second pole of the thin film transistor can be arranged on the same layer or different layers, the positive electrode and the negative electrode can be formed on a passivation layer covering the thin film transistor, the positive electrode can be connected with the second pole through the through holes in all layers between the positive electrode and the second pole, and the negative electrode can be connected with the negative electrode wire through the through holes in all layers between the negative electrode and the negative electrode wire.
Taking the wet etching process of the display panel as an example, when the display panel is subjected to wet etching, the etched material in the display panel, such as Cu, Al, Mo, ITO (Indium Tin Oxide), IGZO, etc., may react with the etching solution, and during the reaction, hydrogen ions in the etching solution may be consumed, and meanwhile, divalent copper ions, trivalent aluminum ions, divalent molybdenum ions, etc., having strong conductivity may be generated. Along with the reaction, the concentration of the conductive ions is gradually increased, so that the conductivity of the etching solution is stronger and stronger, and meanwhile, the concentration of the hydrogen ions in the etching solution is gradually reduced, so that the etching rate is correspondingly reduced. Based on the above rules, in practical application, the monitoring of the etching rate can be realized by detecting the conductivity of the etching liquid in the etching process.
When the display panel is etched, the detection substrate can occupy the position of one display panel, so that the conductivity of the etching liquid can be detected through the detection substrate when other display panels are etched. Fig. 2 is a top view of a detecting unit according to a first embodiment of the present invention, and referring to fig. 2, a gate electrode 102 of a thin film transistor 10 may be connected to a gate line 70, so that a gate current may be input to the gate electrode 102 through the gate line 70 to turn on the thin film transistor 10. During the detection process, the etching solution may be sprayed on the detection substrate, so that the positive electrode 40 and the negative electrode 50 of the detection unit may contact with the etching solution, and when the thin film transistor 10 is turned on, a current may be input to the first electrode 106 of the thin film transistor 10 through the positive electrode line 20, so that the current may flow along the first electrode 106, the active layer 104, the second electrode 107, the positive electrode 40, the etching solution, and the negative electrode 50, and further flow to the negative electrode line 30, and the negative electrode line 30 may output the current. In the prepared detection substrate, the conductivity of the active layer 104 can be determined in advance, so that in the current output process, the current is only influenced by the ion concentration of the etching liquid, and the conductivity of the etching liquid is only related to the ion concentration of the etching liquid, that is, in practical application, the change of the conductivity of the etching liquid can be determined according to the change of the output current of the negative electrode wire 30 in the etching process, so that the current etching rate can be determined to be too fast or too slow, and the etching rate can be adjusted in real time.
It should be noted that, in order to show more structures in the detection unit as much as possible, the passivation layer is not shown in fig. 2, and the structure of the detection unit shown in fig. 2 does not limit the present invention.
Specifically, in practical applications, the conductivity of the etching solution can be reflected by the conductivity of the etching solution, that is, the etching rate in the etching process can be determined by detecting the conductivity of the etching solution in the etching process. In addition, the operational relationship between the magnitude of the output current of the cathode line and the conductivity of the etching solution can be obtained by experimental determination according to different etching solutions, different initial concentrations of the etching solutions and different etched materials.
Similarly, when detecting the gas conductivity in magnetron sputtering, chemical vapor deposition, or the like, by a detection substrate, the detection substrate may be placed in a sputtering chamber or a deposition chamber so that the positive and negative electrodes in the detection cell are in contact with the gas to be detected. Under the condition that the thin film transistor is conducted, current can be input to the first pole of the thin film transistor through the positive pole line, current can be output through the negative pole line, and then the change of the gas conductivity in the cavity can be determined according to the change of the magnitude of the negative pole line output current in the reaction process, so that the current sputtering rate or the current deposition rate can be determined to be too fast or too slow, and then the sputtering rate or the deposition rate can be adjusted in real time.
In an embodiment of the present invention, each detection unit in the detection substrate includes a thin film transistor, a positive electrode line, a positive electrode, a negative electrode line, and a negative electrode, wherein the positive electrode line is connected to a first pole of the thin film transistor, the positive electrode line is connected to a second pole of the thin film transistor, and the negative electrode line is connected to the negative electrode line. When the detection substrate is placed in an ionizable reaction solution or gas, the positive electrode and the negative electrode are in contact with the reaction solution or gas, and when the thin film transistor is turned on, current can be input to the positive line, so that current can pass through the reaction solution or gas in contact with the positive and negative electrodes, and finally be output from the negative line. The reaction rate in the processing process can be determined by detecting the current output by the cathode wire in the processing process, so that the reaction rate can be adjusted, the defect of devices caused by the processing technology is avoided, and the processing resources can be saved.
Example two
Referring to fig. 3, a schematic diagram of a detection apparatus according to a second embodiment of the present invention is shown. The detection device comprises the detection substrate 01 and a control module 02 arranged on the detection substrate, wherein the control module 02 is respectively connected with a grid electrode, a positive electrode wire and a negative electrode wire of the thin film transistor and is used for driving the grid electrode, inputting current to the positive electrode wire and collecting current output by the negative electrode wire.
Referring to fig. 3, the sensing substrate 01 may include sensing units 001 within each preset region, as shown in fig. 3, each sensing unit may be divided into 4 regions, and one control module may be configured for each region, so that one control module may control each sensing unit in the corresponding region, and thus may measure the reaction rate of the region. For example, in fig. 3, a first control module may control each of the detecting units in the lower left preset area, a second control module may control each of the detecting units in the upper left preset area, a third control module may control each of the detecting units in the upper right preset area, and a fourth control module may control each of the detecting units in the lower right preset area.
Referring to fig. 3, the detecting units in each preset region may be arranged in an array, wherein the positive lines of the detecting units in the same row in the same preset region may be shared or interconnected, the negative lines of the detecting units in the same row in the same preset region may be shared or interconnected, the thin film transistor gates of the detecting units in the same row may be sequentially connected through a gate line, and the control module corresponding to any preset region may be connected to the gate line of each detecting unit in each row in the preset region, and the positive line and the negative line of each detecting unit in each row.
Specifically, referring to fig. 4, the control module 02 may include a gate driving unit 021, a current input unit 022, a current collecting unit 023, a data transmitting unit 024, and a power supply 025. The gate driving unit 021 may be connected to the gate line corresponding to each row of the detecting units in the preset region, and is configured to drive the gates of the thin film transistors corresponding to each row of the detecting units in the preset region; the current input unit 022 may be connected to the positive electrode line of each column of the detection units in the corresponding preset region, and configured to input a current to the positive electrode line of each column of the detection units in the corresponding preset region; the current collection unit 023 may be connected to the negative electrode line of each column of the detection units in the corresponding preset region, and is configured to collect current output by the negative electrode line of each column of the detection units in the corresponding preset region; the data transmission unit 024 can be connected with an external data processing device and is used for transmitting the acquired current to the data processing device; the power supply 025 may be connected to the gate driving unit 021, the current input unit 022, the current collection unit 023, and the data transmission unit 024, respectively, for supplying power to the gate driving unit 021, the current input unit 022, the current collection unit 023, and the data transmission unit 024.
The data transmission unit 024 may be specifically a wireless transmitter, so that the current collected by the current collection unit 023 may be directly transmitted to an external data processing device in a wireless manner. In practical applications, the data transmission unit 024 may also be a memory having a transmission function, so that during the detection process, the data transmission unit 024 may store the acquired current, and when the data transmission unit 024 is subsequently connected to a data processing device, the stored current data may be sent to the data processing device, which is not specifically limited in this embodiment of the present invention.
In practical application, in order to avoid the control module from reacting with a reaction solution or gas to cause the detection device to be damaged, the control module can be manufactured firstly and then the passivation layer is manufactured when the detection device is manufactured, so that the passivation layer can cover the control module and further the control module can be protected.
It should be noted that, in practical applications, besides the array arrangement, the detection units in each preset region may also be arranged in a staggered manner in odd rows and even rows, or in other manners, which is not specifically limited in this embodiment of the present invention. In addition, the gate driving unit can simultaneously drive all gates in a preset region in a cascade connection mode or the like, and can also independently drive each gate; the current input unit can simultaneously input current to all positive lines in a preset area in a cascading mode and the like, and can also independently input current to each positive line; the current collecting unit may collect the currents output by all the negative lines in a preset region simultaneously in a cascade connection manner or the like, or may collect the current output by each negative line individually, which is not specifically limited in this embodiment of the present invention. Furthermore, one control module may be configured on one detection substrate, so that the control module may control the detection units in different preset regions, and certainly, in practical applications, a plurality of control modules may be configured on one detection substrate, and each control module may control the detection unit in one preset region, which is not specifically limited in this embodiment of the present invention.
The following description will take the example of detecting the conductivity of the etching solution in the wet etching process by the above detection device. Fig. 5 is a schematic diagram illustrating the detection of the conductive performance of the etching solution by the detection device according to the second embodiment of the present invention. Referring to fig. 5, the fixing device 100 may fix the etching liquid supply device 200 above the support device 300, and the etching liquid supply device 200 is further connected with a plurality of spray nozzles 400, so that when etching or inspection is required, the spray nozzles 400 may be turned on to spray the etching liquid 500. When the detection is needed, the detection device 600 and other display panels to be etched can be placed on the supporting device 300 together, so that the conveying roller 700 on the supporting device 300 can convey the detection device 600 to the lower side of the spray nozzle 400.
When the conductivity of the etching liquid contacted with the upper left preset area needs to be detected, the control module corresponding to the upper left preset area can drive the grid of each thin film transistor in the upper left preset area through the grid driving unit, so that each thin film transistor in the upper left preset area is conducted, and current can be input to each positive electrode line in the upper left preset area through the current input unit. When the etching liquid is sprayed on the detection substrate, the positive electrode and the negative electrode of each detection unit in the upper left preset area can be in contact with the etching liquid, and then the negative electrode line can output current conducted by the etching liquid. Then, the control module corresponding to the upper left preset area can collect the current output by each negative electrode wire in the upper left preset area through the current collecting unit, and further can transmit the collected current to external data processing equipment through the data transmission unit. The data processing equipment can further analyze the current change map in the etching process so as to determine the conductivity of the etching liquid.
When the conductivity of the etching solution is increased too fast, it can be determined that the current etching rate is too fast, and at this time, the current etching rate can be reduced by reducing the supply amount of the etching solution and the like. When the conductivity of the etching liquid is increased too slowly, the current etching rate can be determined to be too slow, and at the moment, the current etching rate can be improved by increasing the supply amount of the etching liquid and the like. By adjusting the etching rate in real time, the defects of poor devices caused by the etching process in the etching process of the display panel can be avoided, the yield of the panel is correspondingly improved, and the waste of processing resources can be avoided.
In an embodiment of the present invention, each of the detection units in the detection device includes a thin film transistor, a positive electrode line, a positive electrode, a negative electrode line, and a negative electrode, wherein the positive electrode line is connected to a first pole of the thin film transistor, the positive electrode line is connected to a second pole of the thin film transistor, and the negative electrode line is connected to the negative electrode line. A control module in the detection device is respectively connected with a grid electrode, a positive electrode wire and a negative electrode wire of the thin film transistor and used for driving the grid electrode, inputting current to the positive electrode wire and collecting current output by the negative electrode wire. When the detection device is placed in an ionizable reaction solution or gas, the positive electrode and the negative electrode are in contact with the reaction solution or gas, and when the thin film transistor is turned on, the control module can input current to the positive electrode line, so that the current can pass through the reaction solution or gas in contact with the positive electrode and the negative electrode, and finally is output from the negative electrode line and collected by the control module. The reaction rate in the processing process can be determined by detecting the current output by the cathode wire in the processing process, so that the reaction rate can be adjusted, the defect of devices caused by the processing technology is avoided, and the processing resources can be saved.
The embodiment of the invention also discloses detection equipment comprising the detection device.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above detailed description is provided for the detection substrate, the detection device and the detection apparatus provided by the present invention, and the principle and the implementation of the present invention are explained by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. An assay substrate, comprising individual assay units, the assay units comprising:
a thin film transistor including a gate electrode, a first electrode and a second electrode;
a positive electrode line connected to a first electrode of the thin film transistor;
a positive electrode connected to a second pole of the thin film transistor;
a negative electrode line;
a negative electrode connected to the negative line;
the detection substrate is used for detecting the current output by the negative electrode wire in an ionizable reaction solution or gas so as to determine the reaction rate of the reaction solution or the gas.
2. The detection substrate according to claim 1, wherein the positive electrode line, the negative electrode line, the first electrode of the thin film transistor, and the second electrode are disposed in the same layer.
3. The detection substrate according to claim 1, wherein at least the positive electrode line, the negative electrode line, and the first and second electrodes of the thin film transistor are covered with a passivation layer, the positive electrode and the negative electrode are formed on the passivation layer, and the positive electrode is connected to the second electrode of the thin film transistor through a via hole in the passivation layer, and the negative electrode is connected to the negative electrode line through a via hole in the passivation layer.
4. The detection substrate according to claim 1, wherein the thickness of the positive electrode is 0.03 μm or more and 1 μm or less.
5. The detection substrate according to claim 1, wherein the thickness of the negative electrode is 0.03 μm or more and 1 μm or less.
6. The detection substrate according to claim 1, wherein the material of the positive electrode or the negative electrode is silver, platinum, gold, or graphite.
7. An inspection apparatus comprising the inspection substrate according to any one of claims 1 to 6, and a control module;
the control module is respectively connected with the grid electrode of the thin film transistor, the positive electrode wire and the negative electrode wire and used for driving the grid electrode, inputting current to the positive electrode wire and collecting current output by the negative electrode wire.
8. The detection device according to claim 7, wherein the detection substrate comprises detection units in each preset area, and the detection units in each preset area are arranged in an array; the positive electrode lines of the detection units in the same row in the same preset area are shared or interconnected, the negative electrode lines of the detection units in the same row in the same preset area are shared or interconnected, and the grids of the thin film transistors of the detection units in the same row are sequentially connected through grid lines; and the control module corresponding to the preset area is connected with the grid lines of all the detection units in the preset area, and the positive electrode lines and the negative electrode lines of all the detection units.
9. The detection device of claim 8, wherein the control module comprises:
the grid driving unit is connected with the grid lines of the detection units in each row in the corresponding preset area and is used for driving the thin film transistor grids of the detection units in each row in the corresponding preset area;
the current input unit is connected with the positive electrode line of each row of detection units in the corresponding preset area and is used for inputting current to the positive electrode line of each row of detection units in the corresponding preset area;
the current acquisition unit is connected with the negative electrode line of each row of detection units in the corresponding preset region and is used for acquiring the current output by the negative electrode line of each row of detection units in the corresponding preset region;
the data transmission unit is connected with external data processing equipment and used for transmitting the acquired current to the data processing equipment;
and the power supply is respectively connected with the grid driving unit, the current input unit, the current acquisition unit and the data transmission unit and is used for supplying power to the grid driving unit, the current input unit, the current acquisition unit and the data transmission unit.
10. A test device comprising a test apparatus according to any of claims 7-9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000018621A (en) * | 1998-09-03 | 2000-04-06 | 윤종용 | Apparatus for adjusting discharge of gas |
| CN103390623A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Method of manufacturing detection device, detection device, and detection system |
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN105810607A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for realizing P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring |
| CN105914172A (en) * | 2016-06-15 | 2016-08-31 | 苏州众显电子科技有限公司 | Substrate etching monitoring method |
| CN107293508A (en) * | 2017-06-07 | 2017-10-24 | 深圳市华星光电技术有限公司 | A kind of base plate carving and corrosion device and lithographic method |
-
2018
- 2018-08-14 CN CN201810922499.XA patent/CN109087873B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000018621A (en) * | 1998-09-03 | 2000-04-06 | 윤종용 | Apparatus for adjusting discharge of gas |
| CN103390623A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Method of manufacturing detection device, detection device, and detection system |
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN105810607A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for realizing P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring |
| CN105914172A (en) * | 2016-06-15 | 2016-08-31 | 苏州众显电子科技有限公司 | Substrate etching monitoring method |
| CN107293508A (en) * | 2017-06-07 | 2017-10-24 | 深圳市华星光电技术有限公司 | A kind of base plate carving and corrosion device and lithographic method |
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