CN109065713A - SPR nerve synapse device and preparation method thereof based on a-Si memristor effect - Google Patents
SPR nerve synapse device and preparation method thereof based on a-Si memristor effect Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors based on radiation or particle beam assisted switching, e.g. optically controlled devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
Abstract
SPR nerve synapse device and preparation method thereof based on a-Si memristor effect, belongs to bionical device arts.The present invention is by crystalline silicon prism and " top electrode/a-Si: metal nanoparticle double change resistance layer/hearth electrodes " memristor structure Coupling, so that optical signal through crystalline silicon prism is incident upon double change resistance layers under electrical modulation, and use surface plasma body resonant vibration (SPR) effect, so that the change in dielectric constant information of change resistance layer is read out in device operation with optical signal, and then realize that the light of device synapse weight is read." electrical modulation; light is read " nerve synapse device proposed by the invention has tradition " electrical modulation; electricity is read " incomparable advantage of nerve synapse device, because it not only has the characteristics such as traditional memristor low energy consumption, non-volatile, but also the advantage that signal processing band is roomy, anti-electromagnetic interference capability is strong is carried out as information carrier with light.
Description
Technical field
The invention belongs to bionical device arts, and in particular to the SPR nerve synapse device based on a-Si memristor effect
And preparation method thereof.
Background technique
Traditional computer is based on " von Neumann framework ", however, information-storing device in " von Neumann framework "
Data call and transmission are connected by bus between processor, this mode make the efficiency of information processing not only by
The influence of processor arithmetic speed, memory rate also suffers from the restriction of bus message transmittability, forms so-called " Feng
Nuo Yiman bottleneck ".Although human brain processing information content it is few unlike computer, obviously it is more efficient, energy consumption is smaller.For
This, researcher constructs the theory of intelligent computer, it is expected that allowing computer learning neural network more preferably to simulate human brain function
Can, produce the computer for being more nearly human brain.Therefore, it studies, develop with class human brain adaptive ability, can locate parallel
The neurobionics computer of reason much information is the research hotspot in future computer field all the time.Biophysical studies table
Bright, the completion of cerebral function is inseparable with nerve synapse, the plasticity of nerve synapse be brain be completed at the same time information storage and
The basis of processing.Thus, the important step that human simulation is artificial neural network research, and neural shape are carried out to nerve synapse
The key of state computer and the research of other intelligent terminals.
In intelligent device and nerve synapse analogue simulation research field, memristor is caused by its novel characteristic
Researcher's note that it was discovered by researchers that according to memristor theoretical model, resistance value can with apply voltage and occur
Variation, and can remember the state changed, unique nonlinear transmission characteristic possessed by memristor, with nerve in biological brain
The behavior of cynapse and principle have very high similitude.And to make memristor be highly suitable as nerve synapse imitative for this similitude
Raw device, and it is used for construction neuromorphic chip, and then be used for artificial neural network.In traditional neuromorphic chip
In, transistor is the basic unit for constructing bionical cynapse.However, the bionical cynapse device based on transistor, not only bulky,
Energy consumption is high, learning ability is poor, and forms new weight and have to rebuild circuit.In contrast, memristor be it is a kind of more
For outstanding bionical cynapse device.Because memristor is as bionical cynapse device, not only small in size, low in energy consumption, recyclable number
Height, and its working condition (resistance value after excitation) does not need energy to maintain and (have self-maintaining), it is even more important that its
Resistance value has continuous adjustability.However, still there is also defects for memristor, due to now (being hindered based on memristor both at home and abroad at present
Transition storage ReRAM) construction neuromorphic chip, synapse weight is written and is read as information media using electric signal
It takes, i.e. " electrical modulation, electricity are read " mode, and the main shortcoming of this operating mode is that signal processing bandwidth is small, electric
Crosstalk is easy to produce in signal transduction process.
Summary of the invention
In view of described above, existing signal processing band when the present invention is for the existing bionical cynapse work based on memristor
The problem of width is small, crosstalk easily occurs for signal transduction process provides a kind of light reading SPR neural process based on a-Si memristor effect
Tentaculum part and preparation method thereof.The present invention is designed by reasonable structure, so that nerve synapse devices use optical signal is as letter
Medium is ceased, and synapse weight is represented with light intensity, the latter is read out, breaches the band of traditional neural cynapse device signal processing
Tolerance system and electromagnetic interference.
To achieve the goals above, the present invention adopts the following technical scheme:
On the one hand the present invention provides a kind of SPR nerve synapse device based on a-Si memristor effect, it is characterised in that: including
Memristor and the crystalline silicon prism being arranged in above the memristor, the memristor have " hearth electrode/the first a- from bottom to top
The vertical four-layer structure of Si change resistance layer/the 2nd a-Si change resistance layer/top electrode ", the refractive index of the crystalline silicon prism is not less than described
The refractive index of 2nd a-Si change resistance layer so that under electrical modulation near infrared light be incident upon through crystalline silicon prism " the first a-Si change resistance layer/
The double change resistance layers of 2nd a-Si change resistance layer " cause the plasma at interface between top electrode and the 2nd a-Si change resistance layer to generate resonance.
Further, crystal silicon wafer is additionally provided between memristor and crystalline silicon prism in the present invention.
Further, the material of top electrode is selected from metallic silver or gold in the present invention, with a thickness of 30nm~60nm.
Further, the material of hearth electrode is selected from metal platinum, metallic aluminium or p-type heavy doping a-Si material in the present invention,
With a thickness of 100nm~500nm.Preferably, the hearth electrode is circular electrode array, and array element diameter is 5 μ
M~300 μm, the edge spacing of adjacent array element are 5 μm~20 μm.
Further, the first a-Si change resistance layer can be pure a-Si (amorphous silicon) film in the present invention, or contain
The a-Si film of metal nanoparticle；The 2nd a-Si change resistance layer is the a-Si film containing metal nanoparticle in the present invention, and
And its metal nanoparticle content is higher than the metal nanoparticle content of the first a-Si change resistance layer.The metal nanoparticle is selected from
Ag, Cu or Al.
It is preferred that the percentage by volume of the first a-Si change resistance layer metal nanoparticle is not higher than 10%, institute
The percentage by volume for stating the 2nd a-Si change resistance layer metallic particles is 20%~45%.
Rich metal layer and scarce metal layer are prepared in a-Si material, for realizing the resistance adjustability of device.Because of rich metal
Layer has higher electric conductivity compared to metal layer is lacked, there are uniform conductive leading end interface between this two layers, and conductive leading end meeting
It moves with voltage is applied to rich metal layer (perhaps scarce metal layer) so as to cause rich metal layer (or scarce metal layer) in entirety
Ratio in device becomes smaller, and then increases (reduction) electric conductivity.
Further, the first a-Si change resistance layer is the intrinsic amorphous silicon as made from sputtering method (a-Si) film in the present invention
Or amorphous silicon (a-Si) film of the nano particle containing Ag, Cu and Al one of which metal is made by cosputtering method, it is thick
Degree is 30nm~100nm.
Further, the 2nd a-Si change resistance layer is to be made one of containing Ag, Cu and Al by cosputtering method in the present invention
Amorphous silicon (a-Si) film of the nano particle of metal, with a thickness of 10nm~50nm.
Further, near infrared light is TM polarised light in the present invention, and wave-length coverage is 400nm~1100nm.
On the other hand the present invention provides a kind of preparation side of SPR nerve synapse device based on above-mentioned a-Si memristor effect
Method, which comprises the steps of:
Step A: the production of memristor:
A1: crystal silicon wafer bottom surface deposition metal layer as top electrode；
A2: double change resistance layer windows are formed in the top electrode bottom surface, then at the bottom of gluing and patterned top electrode
A-Si film is sequentially depositing on face as the 2nd a-Si change resistance layer and the first a-Si change resistance layer, the first a-Si change resistance layer is this
A-Si film or the a-Si film containing metal nanoparticle are levied, the 2nd a-Si change resistance layer is to contain metal nanoparticle
A-Si film, and its metal nanoparticle content it is high compared with the first a-Si change resistance layer it is to be deposited after the completion of remove extra " second
The double change resistance layers of a-Si change resistance layer/the first a-Si change resistance layer "；
A3: hearth electrode pattern is formed in the bottom surface of the first a-Si change resistance layer, then in gluing and patterned the
Deposited metal layer on one a-Si change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-Si change resistance layer
The hearth electrode of bottom surface；So far memristor is made；
Step B: the production of nerve synapse device:
Crystalline silicon prism and the memristor obtained through step A is bonding, so far complete the system of SPR nerve synapse device
It is standby.
Further, the production of memristor can be carried out directly in crystalline silicon prism bases in the present invention, that is, save crystal
Silicon wafer and bonding operation, directly in the bottom surface of crystalline silicon prism production " hearth electrode/the first a-Si change resistance layer/the 2nd a-Si resistance
The memristor of the vertical four-layer structure of change layer/top electrode ".
Further, the deposition of hearth electrode, the first a-Si change resistance layer and the 2nd a-Si change resistance layer is all made of object in the present invention
Physical vapor deposition method combination photoetching process is realized.
Basic principle of the invention is: the refractive index of the relatively double change resistance layers of crystalline silicon prism is larger, works as specific wavelength in this way
Incident light from the plane of incidence of crystalline silicon prism with incidence angle θsIt is incident when being mapped to the bottom of crystalline silicon prism or crystal silicon wafer
Top electrode surface of the light below crystalline silicon prism or crystal silicon wafer generates evanescent wave, so with " top electrode/second-Si hinders
The surface plasma of change layer " interface generates resonance (SPR), so that meeting the incidence angle θsOptical signal be strongly absorbed,
And the optical signal being strongly absorbed is through reflecting the exit facet output from crystalline silicon prism with minimum amplitude.When in device top electrode
When being biased (electrical modulation) between hearth electrode, the interface of the 2nd a-Si change resistance layer and the first a-Si change resistance layer is in electric field action
It is lower to move, so that the dielectric constant of double change resistance layers changes between top electrode and hearth electrode, so that incident light
Change therewith with surface plasma body resonant vibration (SPR) condition of top electrode, if at this point, optical signal still according to it is aforementioned
Identical incidence angle θsWhen being mapped to crystalline silicon prism or crystal silicon wafer bottom, since the SPR condition of incident light and top electrode is sent out
Changing, that is, above-mentioned " extreme value " condition for minimum light amplitude occur is destroyed, and then weaken plasmon absorption and make
With so that via the enhanced strength of the output optical signal detected in crystalline silicon prism exit facet；At this time with regard to need change into
Penetrate the incidence angle θ of lights, so that incident light and top electrode meet SPR condition again, to make again after reflection from crystalline silicon
The optical signal of the exit facet output of prism has the smallest amplitude, is applied between top electrode and hearth electrode particular by change
The bias condition (electrical modulation) of voltage makes the 2nd a-Si change resistance layer and the first a-Si change resistance layer interface displacement according to gradual change, reversible
The mode of (positive counter voltage switching) carries out.For interface position between any one the 2nd a-Si change resistance layer and the first a-Si change resistance layer
(it corresponds to synapse weight) is set, the angle of light θ of SPR condition is metsIt is always unique.Therefore, in a week of electrical modulation
In phase, by bias voltage drive interface location between the 2nd a-Si change resistance layer and the first a-Si change resistance layer variation, it can be achieved that
The resistance value consecutive variations of " the first a-Si change resistance layer/the 2nd a-Si change resistance layer " double change resistance layers or the consecutive variations of synapse weight, into
And make the incidence angle θ for meeting SPR conditionsConsequently also change.Obviously, in nerve synapse device proposed by the present invention,
Synapse weight and surface plasma body resonant vibration incidence angle θsThere are one-to-one relationships, are achieved memristor nerve synapse based on this
" electrical modulation, light are read " of device.
Compared with prior art, beneficial effects of the present invention are as follows:
Nerve synapse device of the present invention combines microelectronic element memristor and optical prism, specifically by big refractive index
Element --- crystalline silicon prism and " top electrode/a-Si: the double change resistance layer/hearth electrodes of metal nanoparticle " memristor structure phase coupling
It closes, guarantees that incident light enters the lesser double change resistance layers of refractive index along the larger material of refractive index with this, help avoid glancing incidence,
Reduce light loss, and use surface plasma body resonant vibration (SPR) effect so that in device operation change resistance layer dielectric constant
Change information is read out with optical signal, and then realizes that the light of synapse weight is read.Because optical signal has with roomy, anti-electromagnetism
The strong feature of interference performance, therefore, " electrical modulation, light are read " nerve synapse device tradition " electrical modulation, electricity proposed by the invention
Read " the incomparable advantage of nerve synapse device, not only there are the characteristics such as traditional memristor low energy consumption, non-volatile, and
And the advantage that signal processing band is roomy, anti-electromagnetic interference capability is strong also is carried out as information carrier with light.
Detailed description of the invention
Fig. 1 is 1 diagrammatic side view of device architecture of the invention.
Fig. 2 is 2 diagrammatic top view of device architecture of the invention.
Fig. 3 is device architecture diagrammatic top view of the invention.
Attached meaning marked in the figure are as follows:
1 is hearth electrode, and 2 be the first a-Si change resistance layer, and 3 be the 2nd a-Si change resistance layer, and 4 be top electrode, and 5 be crystal silicon wafer
Piece, 6 be crystalline silicon prism.
Specific embodiment
Clear, complete description is carried out to technical solution of the present invention with specific embodiment with reference to the accompanying drawings of the specification, with
Phase is skilled artisans appreciate that the principle of the present invention and characteristic.
Embodiment 1:
A kind of SPR nerve synapse device based on a-Si memristor effect, structure include memristor and set as shown in Figure 1:
The crystalline silicon prism 6 above the memristor is set, crystalline silicon prism 6 is the trigone being process by crystalline silicon in the present embodiment
There is " 3/ top electrode 4 of the oneth the 2nd a-Si change resistance layer of a-Si change resistance layer 2/ of hearth electrode 1/ " to hang down from bottom to top for mirror, the memristor
Straight four-layer structure, top electrode 4 is the metallic silver Ag for being deposited on 6 bottom surface of crystalline silicon prism, the 2nd a-Si change resistance layer 3 in the present embodiment
For the a-Si film containing Ag nano particle, the volume fraction of Ag nano particle is 40%, the first a-Si change resistance layer 2 be containing
The a-Si film of Ag nano particle, the volume fraction of Ag nano particle are 5%, and top electrode 4 is to be deposited on the first a-Si resistive
The metal platinum Pt of 2 bottom surface of layer；The refractive index of the crystalline silicon prism 6 is not less than the refractive index of the 2nd a-Si change resistance layer 3, makes
Under electrical modulation, that is, adjust the voltage being applied between top electrode 4 and hearth electrode 1, optical signal is incident upon " the through crystalline silicon prism
The double change resistance layers of the 2nd a-Si change resistance layer of one a-Si change resistance layer 2/ 3 ", cause interface between top electrode 4 and the 2nd a-Si change resistance layer 3
Plasma generates resonance.
The preparation method of the above-mentioned SPR nerve synapse device based on a-Si memristor effect, specific work has been also provided below
Skill process is as follows:
Step 1: prepare crystalline silicon prism 6, the length and width of bottom surface are 15mm；
Step 2: washing and drying treatment is carried out to crystalline silicon prism 6；
Step 3: the metal Ag films with a thickness of 60nm are formed in 6 bottom surface of crystalline silicon prism using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
The memristor window that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and patterned
The 2nd a-Si change resistance layer 3 containing 40% metal silver nano-grain that thickness is 50nm is sequentially depositing on top electrode 4 and containing 5% gold medal
Belong to the first a-Si change resistance layer 2 of silver nano-grain；Using stripping technology, remove other than 4 upper center 10mm × 10mm of top electrode
" the 2nd a-Si change resistance layer 3 of the first a-Si change resistance layer 2/ " double change resistance layers, obtain width be 2.5mm top electrode Windows；
Step 5: it in 2 surface spin coating of the first a-Si change resistance layer, one layer photoresist, is walked using mask plate through photoetching, development etc.
Suddenly, the hearth electrode pattern for being located at 2 bottom surface of the first a-Si change resistance layer is formed, the present embodiment uses electrod-array figure as shown in Figure 3
Case；Then using cosputtering method in gluing and 2 deposited metal platinum Pt of patterned first a-Si change resistance layer；Use removing work
Skill removes excess metal platinum Pt, and hearth electrode 1 is made；So far the preparation of device is completed；
Step 6: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
Embodiment 2:
A kind of SPR nerve synapse device based on a-Si memristor effect, structure include memristor and set as shown in Figure 1:
The crystalline silicon prism 6 setting the crystal silicon wafer 5 above the memristor and being arranged in above the crystal silicon wafer 5, this reality
Applying crystalline silicon prism 6 in example is the prism being process by crystalline silicon, and crystal silicon wafer 5 is also to be process by crystalline silicon,
It is bonded between 5 crystalline silicon prism 6 of crystal silicon wafer preferably with index-matching fluid, the memristor has from bottom to top
" 3/ top electrode 4 of the oneth the 2nd a-Si change resistance layer of a-Si change resistance layer 2/ of hearth electrode 1/ " vertical four-layer structure pushes up electricity in the present embodiment
4 top electrode 4 of pole is the metallic silver Ag for being deposited on 6 bottom surface of crystalline silicon prism, and the 2nd a-Si change resistance layer 3 is to contain Ag nano particle
A-Si film, the volume fraction of Ag nano particle are 40%, and the first a-Si change resistance layer 2 is that the a-Si containing Ag nano particle is thin
Film, the volume fraction of Ag nano particle are 5%, and hearth electrode 1 is the metallic aluminium Al for being deposited on 2 bottom surface of the first a-Si change resistance layer；
The refractive index of the crystalline silicon prism 6 is not less than the refractive index of the 2nd a-Si change resistance layer 3, so that adjusting under electrical modulation
The voltage being applied between top electrode 4 and hearth electrode 1, optical signal are incident upon " the first a-Si change resistance layer 2/ through crystalline silicon prism
The double resistance layers of two a-Si change resistance layer 3 " cause the plasma at interface between top electrode 4 and the 2nd a-Si change resistance layer 3 to generate resonance.
The preparation method of the above-mentioned SPR nerve synapse device based on a-Si memristor effect, specific work has been also provided below
Skill process is as follows:
Step 1: preparing the crystal silicon wafer 5 of crystalline silicon prism 6 and same material, and the length and width of 6 bottom surface of crystalline silicon prism are equal
For 15mm, the length and width of crystal silicon wafer 5 are 15mm, with a thickness of 1,1mm；
Step 2: washing and drying treatment is carried out to crystalline silicon prism 6 and crystal silicon wafer 5；
Step 3: the metal Ag films with a thickness of 60nm are formed in 5 bottom surface of crystal silicon wafer using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
The memristor window that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and patterned
The 2nd a-Si change resistance layer 3 containing 40% metal silver nano-grain that thickness is 50nm is sequentially depositing on top electrode 4 and containing 5% gold medal
Belong to the first a-Si change resistance layer 2 of silver nano-grain；Using stripping technology, remove other than 4 upper center 10mm × 10mm of top electrode
" the 2nd a-Si change resistance layer 3 of the first a-Si change resistance layer 2/ " double change resistance layers, obtain width be 2.5mm top electrode Windows；
Step 5: it in 2 surface spin coating of the first a-Si change resistance layer, one layer photoresist, is walked using mask plate through photoetching, development etc.
Suddenly, the hearth electrode pattern for being located at 2 bottom surface of the first a-Si change resistance layer is formed, the present embodiment uses electrod-array figure as shown in Figure 3
Case；Then using magnetron sputtering method in gluing and 2 deposited metal aluminium Al of patterned first a-Si change resistance layer；Use removing work
Skill removes excess metal aluminium Al, and hearth electrode 1 is made；
Step 6: 6 bottom surface of crystalline silicon prism and crystal silicon wafer 5 not deposited the one of memristor using index-matching fluid
Face coupling, so far completes the preparation of device；
Step 7: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
The embodiment of the present invention is elaborated in conjunction with attached drawing above, but the invention is not limited to above-mentioned
Specific embodiment, above-mentioned specific embodiment is only schematical, rather than restrictive, the ordinary skill people of this field
Member under the inspiration of the present invention, can also make many in the case where not departing from present inventive concept and claimed range
Deformation, these belong to protection of the invention.
Claims (10)
1. a kind of SPR nerve synapse device based on a-Si memristor effect, it is characterised in that: including memristor and be arranged described
Crystalline silicon prism above memristor, the memristor have " hearth electrode/the first a-Si change resistance layer/the 2nd a-Si from bottom to top
The vertical four-layer structure of change resistance layer/top electrode ", the refractive index of the crystalline silicon prism are not less than the folding of the 2nd a-Si change resistance layer
Rate is penetrated, so that through crystalline silicon prism to be incident upon " the first a-Si change resistance layer/the 2nd a-Si change resistance layer " double near infrared light under electrical modulation
Change resistance layer causes the plasma at interface between top electrode and the 2nd a-Si change resistance layer to generate resonance.
2. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
It states and is additionally provided with crystal silicon wafer between memristor and crystalline silicon prism.
3. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
Stating top electrode is metallic silver or gold, with a thickness of 30nm~60nm；The hearth electrode is metal platinum, metallic aluminium or p-type heavy doping
A-Si material, with a thickness of 100nm~500nm.
4. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
Stating the first a-Si change resistance layer is pure a-Si film；The 2nd a-Si change resistance layer is the a-Si film containing metal nanoparticle；
The metal nanoparticle is selected from, Ag, Cu or Al.
5. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
Stating the first a-Si change resistance layer is the a-Si film containing metal nanoparticle；The 2nd a-Si change resistance layer is to contain metal nano
The a-Si film of particle, and metal nanoparticle content is higher than in the first a-Si change resistance layer in the 2nd a-Si change resistance layer
Metal nanoparticle content；The metal nanoparticle is selected from, Ag, Cu or Al.
6. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 5, it is characterised in that: institute
The percentage by volume of metal nanoparticle in the first a-Si change resistance layer is stated not higher than 10%；The 2nd a-Si change resistance layer metal
The percentage by volume of grain is 20%~45%.
7. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
Stating near infrared light is TM polarised light, and wave-length coverage is 800nm~1700nm.
8. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
State the first a-Si change resistance layer with a thickness of 30nm~100nm；The 2nd a-Si change resistance layer with a thickness of 10nm~50nm.
9. a kind of preparation method of the SPR nerve synapse device of a-Si memristor effect, which comprises the steps of:
Step A: the production of memristor:
A1: crystal silicon wafer bottom surface deposition metal layer as top electrode；
A2: double change resistance layer windows are formed in the bottom surface of the top electrode, then in the bottom surface of gluing and patterned top electrode
It is upper that successively deposition a-Si film is successively used as the 2nd a-Si change resistance layer and the first a-Si change resistance layer, the first a-Si respectively twice
Change resistance layer is intrinsic a-Si film or the a-Si film containing metal nanoparticle, and the 2nd a-Si change resistance layer is to contain gold
The a-Si film of metal nano-particle, and its metal nanoparticle content is high compared with the first a-Si change resistance layer, removes after the completion of to be deposited
Extra " the 2nd a-Si change resistance layer/the first a-Si change resistance layer " double change resistance layers；
A3: hearth electrode pattern is formed in the bottom surface of the first a-Si change resistance layer, then in gluing and patterned first a-
Deposited metal layer on Si change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-Si change resistance layer bottom surface
Hearth electrode；So far memristor is made；
Step B: the production of nerve synapse device:
Crystalline silicon prism and the memristor obtained through step A is bonding, so far complete the preparation of SPR nerve synapse device.
10. a kind of preparation method of SPR nerve synapse device based on a-Si memristor effect according to claim 1,
Be characterized in that: the production of the memristor is directly carried out in the bottom surface of crystalline silicon prism.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769194A (en) * | 2020-06-17 | 2020-10-13 | 北京航空航天大学 | Flexible photoelectric sensing memristor based on sawtooth structure nanowire |
| WO2021191697A1 (en) * | 2020-03-26 | 2021-09-30 | International Business Machines Corporation | Optical synapses |
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