CN109065563A - Imaging sensor and its manufacturing method - Google Patents
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
This disclosure relates to imaging sensor and its manufacturing method.Imaging sensor includes: substrate, including photosensitive unit array；In the color-filter layer of substrate, CFI structure is isolated including color filter array and the colour filter for separating the colour filter in color filter array, wherein color filter array includes the multiple colour filters being arranged in correspondence with above multiple photosensitive units in photosensitive unit array；Between adjacent color filter, on the direction for being parallel to substrate, CFI structure includes two or more first isolated parts and one or more second isolated parts, wherein each second isolated part is arranged between two the first isolated parts；And the refractive index of each first isolated part in the first isolated part of two of them or more is less than the refractive index of each colour filter in color filter array, and each second isolated part in one or more second isolated parts is configured to absorb and is incident on light therein.
Description
Technical field
The present disclosure relates generally to technical field of semiconductors, more particularly, to imaging sensor and its manufacturing method.
Background technique
Many modern electronic equipments are related to the electronic device using imaging sensor, for example, slr camera, general digital phase
Machine, video camera, mobile phone, automotive electronics etc..It can be by complementary metal oxide semiconductor (CMOS) technology or charge coupled device
(CCD) technology manufactures conventional imaging sensor.The operation of typical imaging sensor is as follows: light is incident on lenticule,
Then by micro lens, later by optical filter to focus on the photosensitive unit of lower section.Photosensitive unit converts light to
The electric signal proportional to the intensity of incident light.In the image sensor, electric signal is coupled to amplification and reading in photosensitive unit
Circuit (such as CMOS transistor) is out to generate image based on the light captured in photosensitive unit.
However, the light quantity that each pixel unit absorbs is reduced as the pixel unit in imaging sensor reduces.Therefore,
In the presence of making the increased demand of light quantity for being incident on each pixel unit.In addition, light may be by adjacent or neighbouring photosensitive unit
It detects, this to will lead to crosstalk because inappropriate photosensitive unit detects light.Crosstalk may be decreased imaging sensor
Performance, increase noise and reduce imaging sensor generate signal.Therefore, it is always existed in this field to increase
Light is collected and the demand of the imaging sensor of reduced crosstalk.
Summary of the invention
The first purpose of embodiment of the disclosure is to provide a kind of novel imaging sensor and its manufacturing method.
According to one aspect of the disclosure, a kind of imaging sensor is provided comprising: substrate, including photosensitive unit battle array
Column；In the color-filter layer of the substrate, the color-filter layer includes color filter array, wherein the color filter array includes
The multiple colour filters being arranged in correspondence with above multiple photosensitive units in the photosensitive unit array, the color-filter layer also wrap
CFI structure is isolated in the colour filter for separating multiple colour filters in the color filter array included in the substrate；?
Between adjacent color filter in the multiple colour filter, on the direction for being parallel to the substrate, the CFI structure includes two
Or more the first isolated part and one or more second isolated part, wherein one or more of second isolated parts
Each of the second isolated part be arranged in two the first isolated parts in the two or more first isolated parts it
Between；And wherein the refractive index of each first isolated part in the two or more first isolated parts is less than the colour filter
The refractive index of each colour filter in device array, and each second isolated part quilt in one or more of second isolated parts
It is configured to absorb and is incident on light therein.
According to another aspect of the present disclosure, a kind of method for manufacturing imaging sensor is provided comprising: substrate is provided,
It includes photosensitive unit array；First layer is formed in the substrate；Removal and multiple senses in the photosensitive unit array
The light unit corresponding first layer retains the first opening in the multiple first opening to form multiple first openings
Between the first layer to form multiple first grids；First material layer, the first material layer are formed on the first layer
At least cover the side wall of the first opening of each of the multiple first opening；Remove a part of the first material layer and guarantor
The first material layer on each of the multiple first opening side wall of the first opening is stayed, to form multiple first isolation parts
Part；It each of is covered by the first isolated part in the first opening in side wall and forms colour filter, wherein the refractive index of each colour filter is big
In the refractive index for each first isolated part being adjacent；The multiple first grid is removed to form multiple second openings；?
The second isolated part is formed in the second opening of each of the multiple second opening, wherein each second isolated part is configured as
It can absorb and be incident on light therein；And wherein between adjacent color filter, on the direction for being parallel to the substrate, by two
A first isolated part and the second isolated part therebetween form colour filter and CFI structure are isolated.
According to the yet other aspects of the disclosure, a kind of method for manufacturing imaging sensor is provided comprising: lining is provided
Bottom comprising photosensitive unit array；First layer is formed in the substrate；With multiple senses in the photosensitive unit array
In each second area between the corresponding multiple first areas of light unit, two or more ditches are formed in the first layer
Slot；First material layer is formed on the first layer, and the first material layer is at least filled described two in each second area
Or more groove；Remove a part of the first material layer, and retain be filled in described two in each second area or
The first material layer in more grooves, to form two or more the first isolated parts in each second area；
The first layer in the multiple first area is removed to form multiple first openings, remove in each second area with first
The adjacent first layer of isolated part is open with forming one or more second in each second area；The multiple first
Colour filter is formed in the opening of each of opening first, wherein the refractive index of the colour filter is greater than the folding of each first isolated part
Penetrate rate；The second isolation part is formed in the second opening of each of one or more of second openings in each second area
Part, wherein each second isolated part, which is configured to absorb, is incident on light therein；And wherein between adjacent color filter,
On the direction for being parallel to the substrate, in each second area, by two or more first isolated parts and one or
Multiple second isolated parts constitute colour filter and CFI structure are isolated, wherein each of one or more of second isolated parts
Second isolated part is arranged between two the first isolated parts in the two or more first isolated parts.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 shows the signal of a part of the imaging sensor of one or more exemplary embodiments according to the disclosure
Property top view.
Fig. 2 shows the signals according to a part of the imaging sensors of the one or more exemplary embodiments of the disclosure
Property sectional view.
Fig. 3 shows the flow chart of the manufacture imaging sensor according to one or more exemplary embodiments of the disclosure.
Fig. 4-Figure 19, which is respectively illustrated, manufactures imaging sensor according to one or more exemplary embodiments of the disclosure
Schematic sectional view at each step.
Figure 20 shows the flow chart of the manufacture imaging sensor according to one or more exemplary embodiments of the disclosure.
Figure 21-Figure 27, which is respectively illustrated, is manufacturing image sensing according to one or more exemplary embodiments of the disclosure
Schematic sectional view at each step of device.
Figure 28 shows the enlarged diagram of the enclosed part of the dotted line in Figure 27.
Figure 29 is in the imaging sensor schematically shown according to one or more exemplary embodiments of the disclosure
The schematic diagram of a part of the optical path in CFI structure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as a part of this specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Cmos image sensor may include the multiple extra plays being formed on the top of substrate, such as dielectric layer and interconnection
Metal layer, wherein interconnecting metal layer is for connecting pixel unit and peripheral circuit.Cmos image sensor with extra play
Side is commonly referred to as front side, and the side opposite with front side of substrate is known as back side.According to the difference of light path, cmos image is passed
Sensor can be further divided into two primary categories, that is, (FSI) imaging sensor and back-illuminated type (BSI) image sensing front-illuminated
Device.In FSI imaging sensor, lenticule and colour filter are arranged in the front side of substrate, and light from front side by lenticule and
Colour filter is incident on photosensitive unit.
Compared with FSI imaging sensor, lenticule and colour filter in BSI imaging sensor are set to substrate backside.
Photosensitive unit array is placed in substrate and to the photaesthesia of the back side incidence by substrate.Due to there is no metal barrier incident light
Line, photosensitive unit can receive more light, and then improve the optical sensitivity of imaging sensor.
One challenge of BSI imaging sensor is the crosstalk between adjacent pixel unit.As BSI imaging sensor becomes
Must be smaller and smaller, the distance between adjacent pixel unit becomes smaller and smaller, thus a possibility that increasing crosstalk.BSI figure
As another challenge of sensor is that light is collected.Surface face as BSI imaging sensor becomes smaller and smaller, for light collection
Product becomes smaller and smaller, to reduce the sensitivity of imaging sensor.
Therefore, in cmos image sensors, it is isolated by the way that colour filter is arranged between the colour filter in color filter array
(CFI) structure receives the uniformity of light improving each pixel unit and prevents optical crosstalk.It is some in the prior art, utilize
Refractive index is less than CFI structure made of the low-index material of the refractive index of the colour filter in color filter array to reduce pixel list
Optical crosstalk between member.Its main principle is the total reflection of light to occur between colour filter and CFI structure to draw light
It leads in corresponding colour filter or photosensitive unit.However, in some cases, some light still can be refracted into CFI structure,
To which more or less all crosstalk can be caused to adjacent colour filter and photosensitive unit.
Accordingly, it is desirable to provide a kind of CFI structure, improves depth-width ratio and can reflect the light for being incident on CFI structure
Corresponding pixel unit is returned to enhance light collection, and light is made not enter adjacent pixel unit and improve anti-optics string
The ability disturbed.
In view of the above, this application provides a kind of with the improved imaging sensor for being optically isolated and collecting with light.
Fig. 1 and Fig. 2 respectively illustrates showing for a part of the imaging sensor of one or more exemplary embodiments according to the disclosure
Meaning property top view and schematic sectional view.
For purposes of brevity, it includes the pixel unit being made of 3 × 3 pixel units that Fig. 1, which shows imaging sensor,
Array, wherein the pixel unit array include to the photaesthesia by back side incidence of substrate 10 in substrate with go with/
Or the photosensitive unit array 100 with 3 × 3 photosensitive units of column arrangement.However, it should be understood that the photosensitive unit array 100
It may include the photosensitive unit with any suitable number and pattern.In addition, pixel unit in pixel unit array with it is photosensitive
Cell array 100 is also not necessarily arranged in a manner of shown in Fig. 1.That is, for example, in one embodiment, each picture
Plain unit for example may include two photosensitive units etc..In addition, pixel unit can also include corresponding to photosensitive unit array 100
The pixel circuit (not shown) such as amplifying transistor, transmission transistor being arranged.
In addition, being provided with corresponding color filter array 103 above photosensitive unit array 100.In one embodiment, as schemed
Shown in 1, color filter array 103 can indicate to include red, green and blue filter Bayer template chromatic filter.When
So, it is possible to use other colour filter templates and color (for example, cyan, yellow, carmetta).Color filter array 103 is by CFI structure
102 keep apart, to prevent optical crosstalk, wherein CFI structure 102 be arranged in around the colour filter in color filter array 103 and it
Between.
With reference to Fig. 2, in the sectional view, for simplicity, three pixel units, respectively red pixel are illustrated only
Unit, green pixel cell and blue pixel cells；However, in practical devices, it will thus provide thousands of or more or more
Few pixel unit array, is generally positioned to be row and column.In addition, pixel unit can not also be carried out according to sequence shown in Fig. 2
Arrangement.
As shown in Figure 2, imaging sensor further includes deep trench isolation (DTI) structure 101, will such as photodiode
Each photodiode in the photosensitive unit array 100 of array etc is electrically and/or optically isolated, to reduce in the substrate
Crosstalk and dark current between pixel unit and improve sensing performance.DTI structure 101 is arranged in photodiode array 100
In adjacent photodiode between, and the position in substrate is extended to from the back side of substrate.
In addition, being formed with microlens array 104 in color filter array 103 and CFI structure 102.Microlens array 104 can be with
It is made of transparent organic material, inorganic compound material, and there is convex upper surface.Microlens array 104 can be concentrated
Pixel unit center or be slightly displaced from.
The heap in addition, imaging sensor can also metallize including the back-end process (BEOL) of at the front side of substrate 10 or top
Overlapping piece 201.BEOL metallization stack part 201 may include the multiple metalization layers being stacked in interlayer dielectric layer 20.BEOL gold
One or more contacts of categoryization stack 201 extend to pixel unit from metalization layer.In addition, BEOL metallization stack part
201 one or more through-holes extend between metalization layer with interconnection metallization.
Other than exemplary structure described herein, substrate 10 can also include other devices, including in substrate 10
Active transistor, diode, capacitor, resistor, memory cell, analog device, the filter, receipts formed in another part
Send out device etc..Moreover, side on substrate can be set in encapsulating material, after forming imaging sensor described in the disclosure with shape
At complete micromodule.
As shown in Figures 1 and 2, CFI structure 102 can be composite construction, on the direction parallel with substrate 10,
The second isolation for being stacked with the first isolated part 1022 between adjacent colour filter and being clipped between the first isolated part 1022
Component 1021, wherein the first isolated part 1022 can be for example less than the folding of the colour filter in color filter array 103 by refractive index
The material for penetrating rate is formed, and the second isolated part 1021 can be configured as to absorb and be incident on light therein.Pass through this
The light of the arrangement of sample, the first isolated part 1022 being incident on from color filter array 103 can be in colour filter and the first isolation part
The interface of part 1022 is totally reflected, to light back into corresponding pixel unit, and it is other photosensitive to deviate light
Unit.In addition, entering CFI structure 102 even if there is light not to be reflected back corresponding pixel unit, which also can be by second
Isolated part 1021 absorbs, and enters adjacent pixel unit from without light.Arrangement in this way, can improve optical isolation and
Optical absorption property.
(first embodiment)
Fig. 3 shows the flow chart of the manufacture imaging sensor according to disclosure one or more exemplary embodiment.Figure
4- Figure 19 is respectively illustrated at each step for manufacturing imaging sensor according to one or more exemplary embodiments of the disclosure
Schematic sectional view.By according to the flow chart in Fig. 3 and with reference to sectional view of the Fig. 4 into Figure 19 come describe according to first implement
One example of the method for the manufacture imaging sensor of example.Fig. 4 to Figure 19 shows the schematic sectional view of three pixel units,
However it is understood by skilled practitioners that imaging sensor may include multiple pixel units and other elements, Fig. 4 to Figure 19 is only
Be in order to illustrate and draw.In addition, BEOL metallization heap therein is omitted in order to be more clear the attached drawing of Fig. 4 to Figure 19
Overlapping piece and other elements.
In one embodiment, substrate 10 is provided first, which includes the steps that photosensitive unit array 100 (in Fig. 3
S301)。
As shown in Figure 4, substrate 10 is provided, wherein in substrate 10 comprising photosensitive unit array 100, DTI structure 101 and
Other pixel transistor (not shown) of transmission transistor, selection transistor, amplifying transistor, reset transistor etc..DTI
Structure 101 is from the position that the back side of substrate extends in substrate adjacent photosensitive unit to be electrically and/or optically isolated.
Substrate 10 can be silicon substrate or other semiconductor materials.GaAs, germanium, silicon carbide, indium arsenide can be used
Or indium phosphide or alloy semiconductor, such as, silicon germanium carbide, InGaP, InGaAsP etc..Substrate usually can be semiconductor material
The wafer of material.In other embodiments, substrate 10 may be provided as epitaxial layer on insulator, such as " SOI " layer.Partly lead
The wafer of body material can be engaged or be stacked, and substrate can be one of these layers.Substrate 10 usually passes through grinding wafer side
Method is thinned, such as, chemically mechanical polishing (" CMP "), machinery wafer grinding or conductor etching.
Next, forming first layer 105 (the step S302 in Fig. 3) on substrate 10.
As shown in Figure 5, by the methods of chemical vapor deposition (CVD), epitaxial growth on the back side of substrate 10 shape
At first layer 105.First layer 105 can for example be formed by amorphous carbon (α-C).Due to the profile of amorphous carbon after the etching
It well and then easily removes, it is therefore preferred that using amorphous carbon as first layer 105 to limit subsequent CFI structure
102 position and shape.
Next, removal first layer 105 corresponding with multiple photosensitive units in photosensitive unit array 100 is multiple to be formed
First opening 106, and retain the first layer 105 between the first opening in multiple first openings 106 to form multiple first grids
Lattice 107 (the step S303 in Fig. 3).
Specifically, as shown in Figure 6, for example, by photoetching process, so that resist pattern (not shown) exposes first layer
105 part that form the first opening 106, i.e., first layer 105 is corresponding with the photosensitive unit in photosensitive unit array 100
Part, and cover the other parts of first layer 105.Then by the methods of ashing, plasma etching, first layer is removed
105 part exposed by resist pattern and the part covered by resist pattern for retaining first layer 105.Shape as a result,
At the first layer for corresponding to multiple first openings 106 and multiple first openings 106 of restriction that photosensitive unit array 100 is arranged
(that is, multiple first grids 107).
Next, forming first material layer 1022 on first layer 105, which at least covers multiple the
The side wall (the step S304 in Fig. 3) of first opening of each of one opening 106.
In one embodiment, first material layer 1022 can be with the colour filter adjacent thereto than being formed later
The dielectric layer of the low refractive index of 103 refractive index, so that the portion from the surface that colour filter 103 is incident on first material layer 1022
Light splitting is totally reflected.In one example, first material layer 1022 can for example be formed by silica.
Specifically, in this embodiment, it as shown in Figure 7, can be heavy by chemical vapor deposition (CVD), physical vapor
The methods of product (PVD), atomic layer deposition (ALD) form first material layer 1022, and the first material layer 1022 is covered on first
On the top surface of grid 107 and at the side wall of the first opening 106 and bottom.
Next, a part of removal first material layer 1022 and retaining multiple first openings each of 106 first and opening
First material layer 1022 on the side wall of mouth, to form multiple first isolated parts 1022 (the step S305 in Fig. 3).
As shown in Figure 8, for example, by blanket etching, removal first is open at 106 bottom and the first grid 107
Top surface at first material layer 1022, and retain first opening 106 side wall on first material layer 1022, to be formed
Around the first isolated part 1022 of the side wall setting of each first opening 106.Each first isolated part 1022 being consequently formed
It is configured as changing the direction of travel for the light for being incident on its surface, to guide light towards corresponding photosensitive unit and light is made to deviate it
Its photosensitive unit.
Colour filter 103 is formed next, each of being covered by the first isolated part 1022 in first opening 106 in side wall,
Wherein the refractive index of colour filter 103 is greater than the refractive index (step in Fig. 3 for each first isolated part 1022 being adjacent
S306)。
Color filter array 103 is arranged among the opening of the first isolated part 1022 restriction.Color filter array 103 can wrap
Red color filter, green color filter and blue color filter are included, certainly, color filter array 103 can have other face as needed
The colour filter of color and it can have other any suitable arrangement modes as required.It can be by multistep lithography step come shape
At the colour filter of different colours.Color filter array 103 may include the material of coloring or dyeing, such as acrylic acid.For example, poly- first
Base methyl acrylate (" PMMA ") or propylene glycol monostearate (" PGMS ") are suitable materials, can use them and increase face
Material or dyestuff form colour filter.However, it is also possible to use other materials.
In one example, in the case where the first isolated part 1022 is formed by silica (refractive index is about 1.547),
The refractive index for forming the material of color filter array 103 is preferably greater than 1.547.Thus the first isolated part 1022 can be light and dredge
Medium, and color filter array 103 can be optically denser medium.The first isolated part 1022 is incident on from color filter array 103 in light
Surface when, i.e., when light is incident on the surface of optically thinner medium from optically denser medium, full transmitting may occur in their interface, from
And the light at the surface for being incident on the first isolated part 1022 is made to be reflected back corresponding pixel unit.
In the first application example, as shown in Figure 9, the upper surface of color filter array 103 is likely lower than the first isolation part
The height of part 1022.It in this case, as shown in Figure 10, can be in colour filter battle array after forming color filter array 103
Planarization layer 108 is formed on column 103.In one example, planarization layer 108 can be silicon oxide layer.Then, as in Figure 11
It is shown, planarization layer 108 chemically-mechanicapolish polish and etc., extra planarization layer 108 is removed, and expose the first grid
The top surface of lattice 107.
In the second application example, as shown in Figure 15, the upper surface of color filter array 103 is equally likely to or is higher than first
The height of isolated part 1022.In such a case, it is possible to be not provided with planarization layer 108.
Next, multiple first grids 107 of removal are to form multiple second opening (109,111) (steps in Fig. 3
S307)。
In the first application example, as shown in Figure 12,108 situation of planarization layer is covered on color filter array 103
Under, planarization layer 108 can play the role of protecting color filter array 103.It therefore, can be without photoetching process the case where
Under, multiple first grids 107 are removed using blanket etching or ashing, to form multiple second openings 109.
In the preferred embodiment, due to by photoetching process, not being etched to the first grid 107 directly, therefore subtract
Processing step is lacked.In addition, with the development of technique, the size of imaging sensor becomes smaller and smaller, and the second opening 109
Size also become smaller and smaller, therefore using photoetching process remove the first grid 107 during it is necessary to have enough essences
The exposure technique of degree is aligned.Therefore, being directly etched to the first grid 107 without using photoetching process reduces pair
The requirement of exposure technique and device, to reduce technology difficulty.
In the second application example, in the case where color filter array 103 is not flattened layer covering (such as institute in Figure 15
Show), as shown in Figure 16, after forming color filter array 103, for example, by photoetching process, so that resist pattern 110 is sudden and violent
Reveal the top surface of the first grid 107 and covers color filter array 103 and the first isolated part 1022.Then, such as institute in Figure 17
Show, by processes such as plasma etching or cineration technics, remove the first grid 107, to form multiple second openings
111.Then, resist pattern 110 is removed.
Next, as shown in Figure 13 and Figure 18, the shape in the second opening of each of multiple second openings (109,111)
At the second isolated part 1021, wherein each second isolated part 1021, which is configured to absorb, is incident on light therein (in Fig. 3
Step S308).
In one embodiment, the second isolated part 1021 can be formed by light absorbing layer.In one example, second every
It can be formed by the polymer material comprising extinction admixture particle from component 1021, wherein admixture is to adjust (such as reduction) folding
Penetrate rate.The polymer material may include polyamide, polyimides, polystyrene, polyethylene, polyethylene terephthalate
Ester, polyurethane, polycarbonate, polymethyl methacrylate or combination above-mentioned.Admixture can be pigments or dyes.Admixture is averaged
Diameter can be about 20nm to about 200nm.Pigments or dyes may include black.In certain embodiments, pigments or dyes include
Carbon black, titanium be black or combination above-mentioned.In another example, the second isolated part 1021 can be formed by light absorbent, such as
Coloured (such as black) polyimides, black chromium, anodized metal, dry film, ceramics, coloured (such as black) adhesive, glass, silicon,
Photosensitive glass etc..These light absorbents can be provided with sheet form (i.e. solid forms).Another kind selection, can by spin coating,
The methods of coating or lamination apply light absorbent.Furthermore, it is possible to apply any light absorbent, further further to increase
Its strong rejection characteristic.In addition, the second isolated part 1021 can be it is opaque.
In one example, the second isolated part 1021 for example can by such as silicon, germanium, III-V semiconducting compound it
The semiconductor material of class is formed.
Figure 29 is in the imaging sensor schematically shown according to one or more exemplary embodiments of the disclosure
The schematic diagram of a part of the optical path in CFI structure.In another embodiment, the second isolated part 1021 can be by antireflection
(ARC) layer is formed.
As shown in Figure 29, the light L11 and L21 to advance in colour filter 103 reaches colour filter 103 and the first isolation part
The interface of part 1022.Wherein, the incident angle of light L11 is greater than complete between colour filter 103 and the first isolated part 1022
The critical angle of reflection.Therefore, light L11 is totally reflected, so that light L12 is reflected back in colour filter 103.However,
The incident angle of light L21 is less than the critical angle of total reflection, therefore, a part of light L31 in light L21 by reflection to
Return in colour filter 103, and another part light L22 be refracted into the first isolated part 1022 after continue on and reach
The interface of one isolated part 1022 and ARC layer 1021, with incidence angle θ 1.In the first isolated part 1022 and ARC layer
1021 interface, a part of light L23 in light L22 are returned in the first isolated part 1022 by reflection.Another portion
Light splitter L24 is continued on after being refracted into ARC layer 1021, reaches ARC layer 1021 and another first isolated part later
1022 ' interface, incidence angle are θ 2.A part of light L25 in light L24 is returned in ARC layer 1021 by reflection.
Light L25 advances in ARC layer 1021 and reaches the interface of the first isolated part 1022 and ARC layer 1021.Light L25's
A part of light L26 is refracted into the first isolated part 1022, and incidence angle is θ 1.
Adjacent emergent ray (such as the light being emitted at the same surface perpendicular to substrate 10 of ARC layer 1021 as a result,
Line L23 and L26) between there are phase difference variations, and the phase difference between adjacent emergent ray is related to their light path, i.e.,
With the optical thickness (i.e. the product of the refractive index of ARC layer 1021 and the width being parallel on the direction of substrate 10) of ARC layer 1021
It is related.Therefore, it is intended that being made by the refractive index for properly selecting ARC layer 1021 and the width being parallel on the direction of substrate 10
Obtaining adjacent emergent ray (such as light L23 and L26), can at least cancel out each other a part.That is, it is desirable to they it
Between optical path difference close to λ/2 odd-multiple nr=of half-wavelength or half-wavelength, that is, wish phase difference between them close to
180 ° or its odd-multiple, wherein n is the refractive index of ARC layer 1021, and r=L24+L25=2CD1021/ cos θ 2, CD1021It is ARC
The physical width of layer.Arrangement in this way allows light L23 and light L26 to cancel out each other, so that being incident on
Light in ARC layer 1021 can be absorbed.The width on the direction for being parallel to substrate 10 of ARC layer can be set to as a result,
For
By the wavelength, the refractive index of ARC layer 1021 and the width of such as colour filter that are incident on the light of ARC layer 1021
Degree, ARC layer 1021 the other parameters such as height design the physical width of ARC layer 1021 so that from ARC layer 1021 perpendicular to
The light of the same surface outgoing of substrate at least offsets each other a part.ARC layer 1021, which can be absorbed, as a result, is refracted into CFI knot
Light in structure 102, to reduce the optical crosstalk between colour filter 103.
It in some embodiments, include the ARC layer for being respectively used to the different in width of different wavelength in imaging sensor
1021。
ARC layer 1021 for example can be silicon nitride (SiN) layer, tantalum oxide (TaO) layer, silicon oxynitride (SiON) layer.One
In a little examples, ARC layer 1021 includes high-g value, such as, hafnium oxide (HfO2), tantalum pentoxide (Ta2O5), zinc oxide
(ZrO2), aluminium oxide (Al2O3) or other high-g values.ARC layer 1021 is also possible to other anti-reflection coatings.In an example
In, the refractive index of ARC layer 1021 can be slightly larger than the refractive index of the first isolated part 1022.
In addition, in one embodiment, ARC layer 1021 can contain extinction admixture particle, to further increase ARC layer
1021 absorb the ability for being incident on light therein.
Next, forming lenticule 104 above color filter array 103 as shown in Figure 14 and Figure 19.Lenticule 104
It can be made of transparent organic material, inorganic compound material, the materials'use surface tension is patterned and flowed back
To obtain convex upper surface.Lenticule can concentrate on the center of pixel unit or be slightly displaced from.
In this way, imaging sensor according to first embodiment has been manufactured.CFI structure 102 in imaging sensor
Adjacent colour filter to be spaced apart around and between the colour filter being arranged in color filter array 103.CFI structure 102 is multiple
Structure and between adjacent colour filter is closed, on the direction for being parallel to substrate 10, CFI structure 102 includes the first isolation part
Part 1022 and the second isolated part 1021 being arranged between the first isolated part.First isolated part 1022 is small by refractive index
It is formed in the material of the refractive index of adjacent colour filter, so that the part light at 1022 surface of the first isolated part can will be incident on
It is reflected back corresponding pixel unit, so that light be made to deviate other photosensitive units.Second isolated part 1021 is by such as light absorbing layer
Or anti-reflection layer is formed, and is incident on light therein so as to absorb.CFI structure 102 in this way, can further mitigate
Or light crosstalk of the elimination to neighboring photosensitive units, more light can also be pooled to target photosensitive unit.In this way, can be with
The light-inletting quantity for improving target photosensitive unit, to improve image quality.
(second embodiment)
Figure 20 shows the flow chart of the manufacture imaging sensor according to one or more exemplary embodiments of the disclosure.
Figure 21-Figure 27 respectively illustrates each step that imaging sensor is manufactured according to one or more exemplary embodiments of the disclosure
The schematic sectional view at place.It describes by the flow chart according to fig. 20 and with reference to figures 21 to the sectional view in Figure 27 according to second
One example of the method for the manufacture imaging sensor of embodiment.Figure 21 to Figure 27 shows schematically cutting for three pixel units
Face figure, however it is understood by skilled practitioners that imaging sensor may include multiple pixel units and other elements, Tu21Zhi
Figure 27 is merely to illustrating and drawing.In addition, BEOL gold therein is omitted in order to be more clear the attached drawing of Figure 21 to Figure 27
Categoryization stack and other elements.In order to more efficiently reduce crosstalk, structure below can not only further decrease light
Crosstalk, and can be applied in any technology node.
In the present embodiment, as shown in Figure 4, substrate 10 is provided comprising (the step in Figure 20 of photosensitive unit array 100
Rapid S2001).Then, as shown in Figure 5, first layer 105 (the step S2002 in Figure 20) is formed on substrate 10.
Next, each between the corresponding multiple first areas of multiple photosensitive units in photosensitive unit array 100
In second area, two or more grooves 113 (the step S2003 in Figure 20) are formed in first layer 105.
As shown in Figure 21 and Figure 22, for example, by photoetching process, resist pattern 112 is formed on first layer 105,
In multiple first areas corresponding with multiple photosensitive units in photosensitive unit array 100, resist pattern 112 is covered on first
On layer 105, and in each second area between first area, resist pattern 112 be covered on first layer 105 and
Wherein form two or more grooves.Then, by the methods of dry etching, ashing, not resisted in first layer 105 is removed
The part that agent pattern 112 covers is lost, to form two or more grooves in first layer 105 in each second area
113.In the example shown in Figure 22, three grooves 113 are formed in the first layer in each second area, but the present invention is not
It is limited to this.
Next, form first material layer 1022 on first layer 105, at least fill two in each second area or
More grooves 113 (the step S2004 in Figure 20).
Specifically, in this embodiment, it as shown in Figure 23, can be heavy by chemical vapor deposition (CVD), physical vapor
The methods of product (PVD), atomic layer deposition (ALD) form first material layer 1022, and the first material layer 1022 is at least filled respectively
Two or more grooves 113 in second area.
Next, removal first material layer 1022 a part and reservation be filled in two or more in each second area
First material layer 1022 in a groove 113, to form two or more the first isolated parts in each second area
1022 (the step S2005 in Figure 20).
As shown in Figure 24, for example, removing extra first material layer 1022 by blanket etching or CMP process, and
And retain the first material layer 1022 in groove 113, to form the corresponding photosensitive unit in substrate 10 on substrate 10
Two or more first isolated parts 1022 being positioned apart from.
In one embodiment, the first isolated part 1022 can be by having the colour filter adjacent thereto than being formed later
What the dielectric layer of the low refractive index of the refractive index of device 103 was formed, so as to be incident on the first isolated part 1022 from colour filter 103
Part light at surface is totally reflected.In one example, the first isolated part 1022 can for example be formed by silica.
Next, removing the first layer 105 in multiple first areas to form the 114 (steps in Figure 20 of multiple first openings
Rapid S2006).In addition, removing the first layer 105 adjacent with the first isolated part 1022 in each second area in each secondth area
115 (the step S2007 in Figure 20) of the second opening of one or more are formed in domain.
In one embodiment, it can be formed in same technique for example, by the methods of ashing or plasma etching
First opening 114 and the second opening 115.In another embodiment, first can be respectively formed by different processing steps
Opening 114 and the second opening 115.
Next, form colour filter 103 in multiple each of 114 first openings of first openings, wherein colour filter 103
Refractive index be greater than each first isolated part 1022 refractive index (the step S2008 in Figure 20).Next, in each second area
One or more of form the second isolated part 1021 in each of 115 second opening of the second opening, wherein each second every
It is configured to absorb from component 1021 and is incident on light therein (the step S2009 in Figure 20).
In specific example, as shown in Figure 26, color filter array 103 is arranged among the first opening 114.Colour filter
Array 103 may include red color filter, green color filter and blue color filter, and certainly, color filter array 103 as needed may be used
It can have other any suitable arrangement modes with the colour filter with other colors and as required.Difference can be passed through
Lithography step be respectively formed the colour filters 103 of different colours.Color filter array 103 may include the material of coloring or dyeing
Material, such as acrylic acid.For example, polymethyl methacrylate (" PMMA ") or propylene glycol monostearate (" PGMS ") are suitable
Material can increase pigments or dyes using them to form colour filter.However, it is also possible to use other materials.
In the example shown in Figure 26, the height phase of the height and CFI structure 102 of the upper surface of color filter array 103
Together.It will be appreciated by those skilled in the art that the height of the upper surface of color filter array 103 can be tied below or above CFI
The height of structure 102, and color filter array 103 can also be covered with planarization layer etc. above.
In one embodiment, the second isolated part 1021 can be formed by ARC layer.ARC layer 1021 is parallel to substrate
Direction on width C D1021It can be arranged in mode similar in a manner of described in first embodiment.ARC layer 1021
It such as can be silicon nitride (SiN) layer, tantalum oxide (TaO) layer, silicon oxynitride (SiON) layer.In some instances, ARC layer 1021 is wrapped
High-g value is included, such as, hafnium oxide (HfO2), tantalum pentoxide (Ta2O5), zinc oxide (ZrO2), aluminium oxide (Al2O3) or its
Its high-g value.ARC layer 1021 is also possible to other anti-reflection coatings.In one example, ARC layer 1021 can be by comprising inhaling
The polymer material of light admixture particle is formed, to enhance light absorpting ability.In one embodiment, the second isolated part 1021 can
To be formed by light absorbing layer.
It in one embodiment, can be in the case where forming the first opening 114 and the second opening 115 in same technique
Then the colour filter for being initially formed different colours forms the second isolated part 1021, can also be initially formed the second isolated part 1021 again
Form colour filter 103.
Next, as shown in Figure 27, forming lenticule 104 above color filter array 103.Lenticule 104 can be by
Transparent organic material, inorganic compound material are made, and the materials'use surface tension is patterned and flowed back to obtain
Convex upper surface.Lenticule can concentrate on the center of pixel unit or be slightly displaced from.
Figure 28 shows the enlarged diagram of the enclosed part of the dotted line in Figure 27.
In one embodiment, as shown in Figure 28, in sectional view, the width of colour filter e.g., about 910nm, and
The width of CFI structure 102 e.g., about 210nm.Assuming that the refractive index n of the second isolated part 1021 is 2 and its width C D1021
When being designed to offset from the green light of its 500nm being emitted, in the case where not considering incident angle, passes through and calculate the second isolation
The width C D of component 10211021Formula d=λ/4n, the width C D of the second isolated part 1021 can be calculated1021For
62.5nm.In this case, the CFI structure 102 between adjacent colour filter 103 may include two the second isolated parts
1021 and three the first isolated parts 1022 being spaced apart the two isolated parts 1021, and each first isolated part
1022 width C D1022It can be designed as CD1022=(210-2*62.5)/3 (nm)=28.3 (nm).It can by above example
Know, it can be by the width C D of the second isolated part 10211021It is designed as particular value, and the width C D of the first isolated part 10221022
It can be the fit value that any technique may be implemented.
Certainly, it will be understood by those skilled in the art that above such arrangement can be used in other any technology nodes.
As long as according to the width of CFI structure 102 and the wavelength for the light for being incident on CFI structure 102, by suitably adjust second every
Refractive index, number and width from component 1021, so that it may so that the light quantity reflected from the second isolated part 1021 is reduced, from
And the second isolated part 1021 is made to be effectively equivalent to absorb and be incident on light therein.
In this way, imaging sensor according to the second embodiment has been manufactured.CFI structure 102 in imaging sensor
It is arranged in around and between the colour filter in color filter array 103.Between adjacent color filter, in the direction for being parallel to substrate 10
On, in each second area, CFI structure 102 includes two or more first isolated parts 1022 and one or more the
Two isolated parts 1021, wherein each second isolated part 1021 is arranged between two the first isolated parts 1022.In addition, each
The refractive index of first isolated part 1022 is less than the refractive index of colour filter 103, and each second isolated part 1021 is configured as
It can absorb and be incident on light therein.CFI structure 102 in this way can further be mitigated or eliminated to neighboring photosensitive list
More light can also be pooled to target photosensitive unit by the light crosstalk of member.In this way, target photosensitive unit can also be improved
Light-inletting quantity, to improve image quality.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description the show or other different other orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature and another element/node/feature in electricity
Above, it is directly connected (or direct communication) mechanically, in logic or in other ways.Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including benefit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in various other embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
In addition, embodiment of the present disclosure can also include following example:
Project 1: a kind of imaging sensor, comprising: substrate, including photosensitive unit array；In the colour filter of the substrate
Device layer, the color-filter layer include color filter array, wherein the color filter array includes in the photosensitive unit array
Multiple colour filters for being arranged in correspondence with above multiple photosensitive units, the color-filter layer further include in the substrate by institute
State the colour filter isolation CFI structure that multiple colour filters in color filter array separate；It is adjacent in the multiple colour filter
Between colour filter, on the direction for being parallel to the substrate, the CFI structure include two or more first isolated parts with
And one or more second isolated parts, wherein the second isolated part cloth of each of one or more of second isolated parts
It sets between two the first isolated parts in the two or more first isolated parts；And it is wherein described two or more
The refractive index of each first isolated part in multiple first isolated parts is less than the folding of each colour filter in the color filter array
Rate is penetrated, and each second isolated part in one or more of second isolated parts is configured to absorb and is incident on it
In light.
The imaging sensor according to project 1 of project 2., further includes: the lenticule battle array on the color-filter layer
It arranges, multiple lenticules in the microlens array are arranged in correspondence with multiple photosensitive units in the photosensitive unit array.
The imaging sensor according to project 1 of project 3., wherein in the two or more first isolated parts
Each first isolated part is configured as changing the direction of travel for the light for being incident on its surface, to guide towards corresponding photosensitive unit
Light and light is made to deviate other photosensitive units.
The imaging sensor according to project 1 of project 4., wherein the two or more first isolated parts are by oxygen
SiClx is formed.
The imaging sensor according to project 1 of project 5., wherein each in one or more of second isolated parts
Second isolated part is formed by light absorbing layer or anti-reflection layer.
The imaging sensor according to project 5 of project 6., wherein the light absorbing layer is by containing extinction admixture particle
Polymer material, coloured polyimides, black chromium, anodized metal, dry film, ceramics, coloured adhesive, glass, silicon, photosensitive glass
One of glass, semiconductor material a variety of are formed.
The imaging sensor according to project 5 of project 7., wherein the anti-reflection layer is being parallel to the substrate
Width on direction is configured as being incident on the anti-reflection layer with the refractive index of the anti-reflection layer and from adjacent colour filter
Light wavelength it is related, and be configured such that and be emitted perpendicular to the same surface of the substrate from the anti-reflection layer
Light is at least partly offset.
The imaging sensor according to project 7 of project 8., wherein the anti-reflection layer is being parallel to the substrate
Width on direction is configured such that the phase for the light being emitted from the same surface perpendicular to the substrate of the anti-reflection layer
Potential difference is close to 180 ° or its odd-multiple.
The imaging sensor according to project 5 of project 9., wherein the anti-reflection layer contains extinction admixture particle.
A kind of method for manufacturing imaging sensor of project 10., comprising: provide substrate comprising photosensitive unit array；Institute
It states substrate and forms first layer；Remove corresponding with multiple photosensitive units in the photosensitive unit array first layer with
Multiple first openings are formed, and the first layer retained between the first opening in the multiple first opening is multiple to be formed
First grid；First material layer is formed on the first layer, and the first material layer at least covers the multiple first opening
Each of first opening side wall；It removes a part of the first material layer and retains every in the multiple first opening
First material layer on the side wall of a first opening, to form multiple first isolated parts；In side wall by the first isolated part
Colour filter is formed in the first opening of each of covering, wherein the refractive index of each colour filter is greater than each first isolation part being adjacent
The refractive index of part；The multiple first grid is removed to form multiple second openings；In each of the multiple second opening
The second isolated part is formed in second opening, wherein each second isolated part, which is configured to absorb, is incident on light therein；
And wherein between adjacent color filter, on the direction for being parallel to the substrate, by two the first isolated parts and therebetween
The second isolated part formed colour filter be isolated CFI structure.
The method according to project 10 of project 11., wherein the height of the colour filter is lower than first isolated part
Height, and before the step of forming the multiple second opening further include: form protective layer, the protective layer is covered on
On the colour filter, and the upper surface of the protective layer is flushed with the upper surface of first isolated part.
The method according to project 10 of project 12., wherein the first layer is formed by amorphous carbon.
The method according to project 10 of project 13., wherein the first isolated part, which is configured as changing, is incident on its surface
Light direction of travel, to guide light towards corresponding photosensitive unit and light made to deviate other photosensitive units.
The method according to project 10 of project 14., wherein the second isolated part is formed by light absorbing layer or anti-reflection layer.
The method according to project 14 of project 15., wherein the light absorbing layer is by the polymerization containing extinction admixture particle
Object material, coloured polyimides, black chromium, anodized metal, dry film, ceramics, coloured adhesive, glass, silicon, photosensitive glass, half
One of conductor material a variety of is formed.
The method according to project 14 of project 16., wherein the anti-reflection layer in the direction for being parallel to the substrate
On width be configured as being incident on the light of the anti-reflection layer with the refractive index of the anti-reflection layer and from adjacent colour filter
Wavelength it is related, and be configured such that the light that is emitted from the anti-reflection layer perpendicular to the same surface of the substrate to
Partially offset.
The method according to project 16 of project 17., wherein the anti-reflection layer in the direction for being parallel to the substrate
On width be configured such that the phase difference of the light being emitted from the anti-reflection layer perpendicular to the same surface of the substrate
Close to 180 ° or its odd-multiple.
The method according to project 14 of project 18., wherein the anti-reflection layer contains extinction admixture particle.
A kind of method for manufacturing imaging sensor of project 19., comprising: provide substrate comprising photosensitive unit array；Institute
It states substrate and forms first layer；Multiple first areas corresponding with multiple photosensitive units in the photosensitive unit array it
Between each second area in, two or more grooves are formed in the first layer；The first material is formed on the first layer
The bed of material, the first material layer at least fill the two or more grooves in each second area；Remove first material
A part of the bed of material, and retain first material in the two or more grooves being filled in each second area
Layer, to form two or more the first isolated parts in each second area；Remove the institute in the multiple first area
First layer is stated to form multiple first openings；Remove the first layer adjacent with the first isolated part in each second area with
One or more second is formed in each second area to be open；It is formed in the first opening of each of the multiple first opening
Colour filter, wherein the refractive index of the colour filter is greater than the refractive index of each first isolated part；Described in each second area
The second isolated part is formed in the second opening of each of the second opening of one or more, wherein each second isolated part is configured
Light therein is incident on for that can absorb；And wherein between adjacent color filter, on the direction for being parallel to the substrate,
In each second area, be made of two or more first isolated parts and one or more second isolated part colour filter every
From CFI structure, wherein the second isolated part of each of one or more of second isolated parts be arranged in it is described two or
Between two the first isolated parts in more first isolated parts.
The method according to project 19 of project 20., wherein the first layer is formed by amorphous carbon.
The method according to project 19 of project 21., wherein the first isolated part, which is configured as changing, is incident on its surface
Light direction of travel, to guide light towards corresponding photosensitive unit and light made to deviate other photosensitive units.
The method according to project 19 of project 22., wherein the second isolated part is formed by light absorbing layer or anti-reflection layer.
The method according to project 22 of project 23., wherein the light absorbing layer is by the polymerization containing extinction admixture particle
Object material, coloured polyimides, black chromium, anodized metal, dry film, ceramics, coloured adhesive, glass, silicon, photosensitive glass, half
One of conductor material a variety of is formed.
The method according to project 22 of project 24., wherein the anti-reflection layer in the direction for being parallel to the substrate
On width be configured as being incident on the light of the anti-reflection layer with the refractive index of the anti-reflection layer and from adjacent colour filter
Wavelength it is related, and be configured such that the light that is emitted from the anti-reflection layer perpendicular to the same surface of the substrate to
Partially offset.
The method according to project 24 of project 25., wherein the anti-reflection layer in the direction for being parallel to the substrate
On width be configured such that the phase difference of the light being emitted from the anti-reflection layer perpendicular to the same surface of the substrate
Close to 180 ° or its odd-multiple.
The method according to project 22 of project 26., wherein the anti-reflection layer contains extinction admixture particle.
Claims (10)
1. a kind of imaging sensor, which is characterized in that described image sensor includes:
Substrate, including photosensitive unit array；
In the color-filter layer of the substrate, the color-filter layer includes color filter array, wherein the color filter array packet
The multiple colour filters being arranged in correspondence with above multiple photosensitive units in the photosensitive unit array are included, the color-filter layer is also
CFI structure is isolated including the colour filter for separating multiple colour filters in the color filter array in the substrate；
Between the adjacent color filter in the multiple colour filter, on the direction for being parallel to the substrate, the CFI structure packet
Include two or more first isolated parts and one or more second isolated part, wherein one or more of second every
Two first isolation being arranged in from the second isolated part of each of component in the two or more first isolated parts
Between component；And
Wherein the refractive index of each first isolated part in the two or more first isolated parts is less than the colour filter
The refractive index of each colour filter in array, and each second isolated part in one or more of second isolated parts is matched
It is set to absorb and is incident on light therein.
2. imaging sensor according to claim 1, which is characterized in that described image sensor further include:
Microlens array on the color-filter layer, multiple lenticules and the photosensitive unit in the microlens array
Multiple photosensitive units in array are arranged in correspondence with.
3. imaging sensor according to claim 1, which is characterized in that in the two or more first isolated parts
Each first isolated part be configured as change be incident on its surface light direction of travel, to draw towards corresponding photosensitive unit
It is guide-lighting and light is made to deviate other photosensitive units.
4. imaging sensor according to claim 1, which is characterized in that the two or more first isolated parts by
Silica is formed.
5. imaging sensor according to claim 1, which is characterized in that in one or more of second isolated parts
Each second isolated part is formed by light absorbing layer or anti-reflection layer.
6. imaging sensor according to claim 5, which is characterized in that the light absorbing layer is by containing extinction admixture particle
Polymer material, coloured polyimides, black chromium, anodized metal, dry film, ceramics, coloured adhesive, glass, silicon, photosensitive glass
One of glass, semiconductor material a variety of are formed.
7. imaging sensor according to claim 5, which is characterized in that the anti-reflection layer is being parallel to the substrate
Direction on width be configured as being incident on the antireflection with the refractive index of the anti-reflection layer and from adjacent colour filter
The wavelength of the light of layer is related, and is configured such that from the same surface perpendicular to the substrate of the anti-reflection layer and is emitted
Light at least partly offset.
8. imaging sensor according to claim 7, which is characterized in that the anti-reflection layer is being parallel to the substrate
Direction on width be configured such that the light being emitted from the anti-reflection layer perpendicular to the same surface of the substrate
Phase difference is close to 180 ° or its odd-multiple.
9. imaging sensor according to claim 5, which is characterized in that the anti-reflection layer contains extinction admixture particle.
10. a kind of method for manufacturing imaging sensor, which is characterized in that the described method includes:
There is provided substrate comprising photosensitive unit array；
First layer is formed in the substrate；
It removes the first layer corresponding with multiple photosensitive units in the photosensitive unit array and is open with forming multiple first,
And retain the first layer between the first opening in the multiple first opening to form multiple first grids；
First material layer is formed on the first layer, and the first material layer at least covers every in the multiple first opening
The side wall of a first opening；
It removes a part of the first material layer and retains on each of the multiple first opening side wall of the first opening
First material layer, to form multiple first isolated parts；
It each of is covered by the first isolated part in the first opening in side wall and forms colour filter, wherein the refractive index of each colour filter is big
In the refractive index for each first isolated part being adjacent；
The multiple first grid is removed to form multiple second openings；
The second isolated part is formed in the second opening of each of the multiple second opening, wherein each second isolated part quilt
It is configured to absorb and is incident on light therein；And
Wherein between adjacent color filter, on the direction for being parallel to the substrate, by two the first isolated parts and therebetween
The second isolated part formed colour filter be isolated CFI structure.
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