CN109065551A - Tft阵列基板的制造方法及tft阵列基板 - Google Patents
Tft阵列基板的制造方法及tft阵列基板 Download PDFInfo
- Publication number
- CN109065551A CN109065551A CN201810853043.2A CN201810853043A CN109065551A CN 109065551 A CN109065551 A CN 109065551A CN 201810853043 A CN201810853043 A CN 201810853043A CN 109065551 A CN109065551 A CN 109065551A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- layer
- block
- tft array
- array substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000004380 ashing Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810853043.2A CN109065551B (zh) | 2018-07-30 | 2018-07-30 | Tft阵列基板的制造方法及tft阵列基板 |
PCT/CN2018/101840 WO2020024345A1 (zh) | 2018-07-30 | 2018-08-23 | Tft 阵列基板的制造方法及 tft 阵列基板 |
US16/308,631 US20200035709A1 (en) | 2018-07-30 | 2018-08-23 | Method for manufacturing thin-film transistor array substrate and thin-film transistor array substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810853043.2A CN109065551B (zh) | 2018-07-30 | 2018-07-30 | Tft阵列基板的制造方法及tft阵列基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109065551A true CN109065551A (zh) | 2018-12-21 |
CN109065551B CN109065551B (zh) | 2020-01-14 |
Family
ID=64831841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810853043.2A Active CN109065551B (zh) | 2018-07-30 | 2018-07-30 | Tft阵列基板的制造方法及tft阵列基板 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109065551B (zh) |
WO (1) | WO2020024345A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110223989A (zh) * | 2019-05-28 | 2019-09-10 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管基板及其制作方法 |
CN110911355A (zh) * | 2019-11-11 | 2020-03-24 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及制备方法 |
CN111048523A (zh) * | 2019-11-25 | 2020-04-21 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制备方法 |
CN111128876A (zh) * | 2019-12-23 | 2020-05-08 | Tcl华星光电技术有限公司 | 一种阵列基板的制备方法 |
CN111785737A (zh) * | 2020-07-15 | 2020-10-16 | Tcl华星光电技术有限公司 | 阵列基板、其制作方法及显示面板 |
CN113972138A (zh) * | 2021-10-09 | 2022-01-25 | Tcl华星光电技术有限公司 | 一种薄膜晶体管的制作方法及薄膜晶体管 |
CN114944362A (zh) * | 2022-05-24 | 2022-08-26 | 福建华佳彩有限公司 | 一种避免有源层蚀刻的7 Mask阵列基板及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101614917A (zh) * | 2008-06-25 | 2009-12-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN101995711A (zh) * | 2009-08-11 | 2011-03-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102655165A (zh) * | 2011-03-28 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种非晶氧化物薄膜晶体管及其制作方法、显示面板 |
CN103236440A (zh) * | 2013-04-12 | 2013-08-07 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法、显示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103646924B (zh) * | 2013-12-04 | 2016-02-10 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制备方法、显示装置 |
-
2018
- 2018-07-30 CN CN201810853043.2A patent/CN109065551B/zh active Active
- 2018-08-23 WO PCT/CN2018/101840 patent/WO2020024345A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101614917A (zh) * | 2008-06-25 | 2009-12-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN101995711A (zh) * | 2009-08-11 | 2011-03-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102655165A (zh) * | 2011-03-28 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种非晶氧化物薄膜晶体管及其制作方法、显示面板 |
CN103236440A (zh) * | 2013-04-12 | 2013-08-07 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法、显示装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110223989A (zh) * | 2019-05-28 | 2019-09-10 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管基板及其制作方法 |
WO2020238030A1 (zh) * | 2019-05-28 | 2020-12-03 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管基板及其制作方法 |
US11289605B2 (en) | 2019-05-28 | 2022-03-29 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor substrate and manufacturing method thereof |
CN110911355A (zh) * | 2019-11-11 | 2020-03-24 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及制备方法 |
CN111048523A (zh) * | 2019-11-25 | 2020-04-21 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制备方法 |
CN111128876A (zh) * | 2019-12-23 | 2020-05-08 | Tcl华星光电技术有限公司 | 一种阵列基板的制备方法 |
CN111128876B (zh) * | 2019-12-23 | 2023-11-28 | Tcl华星光电技术有限公司 | 一种阵列基板的制备方法 |
CN111785737A (zh) * | 2020-07-15 | 2020-10-16 | Tcl华星光电技术有限公司 | 阵列基板、其制作方法及显示面板 |
CN113972138A (zh) * | 2021-10-09 | 2022-01-25 | Tcl华星光电技术有限公司 | 一种薄膜晶体管的制作方法及薄膜晶体管 |
CN113972138B (zh) * | 2021-10-09 | 2023-11-28 | Tcl华星光电技术有限公司 | 一种薄膜晶体管的制作方法及薄膜晶体管 |
CN114944362A (zh) * | 2022-05-24 | 2022-08-26 | 福建华佳彩有限公司 | 一种避免有源层蚀刻的7 Mask阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2020024345A1 (zh) | 2020-02-06 |
CN109065551B (zh) | 2020-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109065551A (zh) | Tft阵列基板的制造方法及tft阵列基板 | |
CN103489877B (zh) | 阵列基板及其制造方法和显示装置 | |
US10205027B2 (en) | Coplanar double gate electrode oxide thin film transistor and manufacture method thereof | |
CN105161505A (zh) | 一种阵列基板及其制作方法、显示面板 | |
CN104022078B (zh) | 一种阵列基板的制备方法 | |
CN104157696B (zh) | 一种薄膜晶体管及制备方法、阵列基板、液晶显示装置 | |
US9406664B2 (en) | Array substrate, method for fabricating the same and display device | |
KR20080012810A (ko) | 박막 트랜지스터 lcd 화소 유닛 및 그 제조방법 | |
CN103149760A (zh) | 薄膜晶体管阵列基板、制造方法及显示装置 | |
CN107611139B (zh) | 薄膜晶体管阵列基板及制作方法 | |
CN103579115B (zh) | 互补式薄膜晶体管及其制备方法、阵列基板、显示装置 | |
CN103715096A (zh) | 薄膜晶体管及其制作方法、阵列基板及其制作方法 | |
CN102629569B (zh) | 一种tft阵列基板及其制造方法 | |
CN104681627A (zh) | 阵列基板、薄膜晶体管及制作方法、显示装置 | |
CN108231553B (zh) | 薄膜晶体管的制作方法及阵列基板的制作方法 | |
WO2013181909A1 (zh) | 薄膜晶体管和阵列基板及其制造方法 | |
CN105068335A (zh) | 一种ffs阵列基板的制造方法 | |
CN109494257A (zh) | 一种薄膜晶体管及其制造方法、阵列基板、显示装置 | |
CN106887379A (zh) | 一种半透掩膜构图方法及阵列基板、显示装置 | |
CN105336746A (zh) | 一种双栅极薄膜晶体管及其制作方法、以及阵列基板 | |
WO2013181915A1 (zh) | Tft阵列基板及其制造方法和显示装置 | |
CN102629588B (zh) | 阵列基板的制造方法 | |
CN109659312A (zh) | 一种阵列基板及其制备方法 | |
WO2013185454A1 (zh) | 阵列基板及其制造方法和显示装置 | |
WO2014005348A1 (zh) | 一种阵列基板的制作方法、阵列基板和液晶显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of TFT array substrate and TFT array substrate Effective date of registration: 20221209 Granted publication date: 20200114 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch Pledgor: TCL China Star Optoelectronics Technology Co.,Ltd. Registration number: Y2022980026386 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20231207 Granted publication date: 20200114 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch Pledgor: TCL China Star Optoelectronics Technology Co.,Ltd. Registration number: Y2022980026386 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of TFT array substrate and TFT array substrate Effective date of registration: 20231220 Granted publication date: 20200114 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch Pledgor: TCL China Star Optoelectronics Technology Co.,Ltd. Registration number: Y2023980072868 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |