CN109055901A - A kind of device and technique improving hard coat and substrate binding force - Google Patents
A kind of device and technique improving hard coat and substrate binding force Download PDFInfo
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- CN109055901A CN109055901A CN201811250029.XA CN201811250029A CN109055901A CN 109055901 A CN109055901 A CN 109055901A CN 201811250029 A CN201811250029 A CN 201811250029A CN 109055901 A CN109055901 A CN 109055901A
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- arc source
- baffle
- substrate
- pivoted frame
- hard coat
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
Abstract
The device and technique of raising physical vapour deposition (PVD) hard coat and substrate binding force of the invention, on the basis of original physical vapor deposition device, the device is by the column arc source of insertion vacuum chamber cavity wall or plane arc source and is placed in the front distance, the adjustable baffle in position, and corresponding independent power supply composition.By adjusting arc source, baffle, hang the current potential between substrate pivoted frame and vacuum-chamber wall, realize the separation of the plasma and its institute's ionization working gas ion that emit arc source, effective control of movement, realize electron bombardment heating, gas ion or arc source metal ion etch cleaner and metal ion implantation, the physical vapour deposition (PVD) of hard coat is connected later, the present apparatus and technique can make substrate surface cleaning more thorough, regulate and control base surface roughness, activated substrate surface, effectively increase cutter, mold, the binding force of the product surfaces such as mechanical key components and lockset hard protection coatings and matrix.
Description
Technical field
The present invention relates to the protection of the substrate surfaces such as metal, technical field of modification more particularly to technical field of vacuum plating.
Background technique
Physical vapour deposition (PVD) (PVD) is that atom or molecule deposit to matrix surface from gas phase, including be deposited, sputter it is heavy
The techniques such as product, ion plating, pulse laser deposition and diffusion coating.Cutting tool, mold, wear resistant parts etc. are heavy through physical vapor
After product hard coat, its surface hardness, compound toughness, wear resistance and chemical stability etc. are effectively increased, is significantly mentioned
The high service life of workpiece.
Hard coat and the good combination of basis material are the key that guarantee its usage performance.But due to hard coat
There are larger differences with structure (lattice constant), hardness and the hot expansibility of basis material, therebetween often exist compared with
Big stress causes binding performance poor, and then influences protection of the hard coat to substrate.The surface state of matrix is to adhesive force
Influence it is very big.Even if sample is cleaned by polishing, polishing, with alcohol, acetone, but still there is one layer of pollution layer on surface, by making
Deposition hard coat cannot directly be contacted with matrix, and diffusion attachment is also impossible to, so that adhesion property is very poor.The method of solution is
It, can be by true before deposition hard coat in addition to carrying out conventional pre-treatment (mechanical lapping, polishing and cleaning) to substrate
The binding performance of hard coat and substrate is improved in empty room to pretreatment of base material, heating and deposition transition zone.
Pretreatment of base material is an important step in physical gas phase deposition technology in vacuum chamber, tradition (conventional to use) method
It generally comprises Glow Discharge Cleaning and two processes is cleaned in arc discharge.High-energy ion bombardment matrix surface can exclude adsorption
Gas and organic matter, while the asperity on surface can also be increased to a certain extent, increase the adhesive force of sedimentary.
Glow discharge be in low-pressure gas such as argon gas or other inert gases by 100V to several kilovolts of electric currents when formed it is a kind of etc. from
Daughter process.It is poor by controlling potential, realize the cleaning of plasma (usually inert gas cation) to substrate.But
The ion energy that conventional glow discharge generates is lower, causes cleaning effect not ideal enough, while being easy to appear and preferentially firing at tip
Burn phenomenon (being referred to as antenna effect).In addition, uniformity when clearing up substrate surface using traditional glow discharge is poor；Arc
Light electric discharge is to emit metal ion by arc source, bombarding base material under the action of bias, thus what realization cleaned it
Target.There are two outstanding problems for arc discharge: on the one hand, due to the high temperature evaporation of electric arc, the plasma of arc source transmitting
In other than including mainly metal ion and electronics, while also containing a large amount of metallic target drop, i.e. bulky grain, this is by serious shadow
Ringing substrate cleaning quality and deteriorating subsequent deposited layers includes the performances such as binding force.On the other hand, under the action of bias, arc source
The energy of the metal ion of transmitting ionizes ion energy much higher than inert gas (working gas), it is not easy to control it and bang substrate
The cleaning effect hit is even damaged to substrate tape when some.
In addition, the temperature of matrix be also influence physical vapour deposition (PVD) hard coat quality and service performance major parameter it
One, the height of numerical value influences the internal stress of hard coat and the bond strength with matrix.Properly (usually higher) temperature
Be conducive to deposition and higher deposition rate is spread and obtained into matrix.The conventional method to substrate heating is in vacuum chamber
Calandria is installed, heat temperature raising is carried out to substrate in the form of infra-red radiation.The problem of this method, is that heating efficiency is lower,
Calandria occupies the certain space of vacuum chamber simultaneously, reduces the indoor space utilization rate of vacuum.
Finally, due to which there is the bright of lattice constant, hardness and hot expansibility etc. for the hard coat and substrate of pre-deposition
Significant difference is other, causes to occur biggish stress therebetween and significantly reduces binding performance.It is still difficult to obtain at present as a result, thick
Spend biggish hard coat.In order to improve the adhesion property of film, one kind can be added between hard coat and matrix in addition
Material such as target metal layer (performance is therebetween), the binding force of coating and matrix is improved by intermediate layer.But
Intermediate layer and substrate cause the raising to binding force limited still there are interface.
Summary of the invention
In order to solve the problems, such as that existing hard coat exists with basis material combination technology, the present invention provides a kind of raisings
The device and technique of physical vapour deposition (PVD) hard coat and substrate binding force.
Present invention technical solution used for the above purpose is: a kind of raisings hard coat and substrate binding force
Device, vacuum chamber inside installation arc source and baffle, arc source include the arc source source Ba Hehu anode, install baffle in front of arc source, very
Pivoted frame is installed, the power cathode in arc source terminates on cathode arc source target, and the positive pole termination in arc source is filling at plenum chamber center
It fits on the anode near arc source；Independent baffle power supply and pivoted frame power supply are connect with baffle and pivoted frame respectively, two of them electricity
Another pole in source is connect with vacuum chamber, and arc source anode, baffle, pivoted frame and vacuum chamber are all electric potential floating state.
The vacuum chamber is inscribe octagon, and evenly distributed installation 1-4 group arc source in vacuum chamber, arc source target is plane
Curved baffle is installed in arc source target or cylindricality arc source target, plane arc source target front mounting plane baffle, cylindricality arc source target front.
The plane shuttering panels are connected using supporting way with vacuum chamber inner wall, and pass through insulation assembly and vacuum chamber 10
Current potential insulation, the length and width of plane shuttering panels is 2-3 times of plane arc source diameter；The curved baffle using hang with
Vacuum chamber inner wall is connected, and is insulated by insulation assembly and vacuum chamber current potential, and the length of curved baffle is the length of column arc
1.1-1.5 times, width is 2-3 times of column arc dia.
The plane shuttering panels and curved baffle are made of conductive, highly heat-conductive material, and plane shuttering panels and curved baffle surface apply
2-10 μm of etch resistant SiC coating is covered, plane shuttering panels and curved baffle are layer 2-4 structure, it is overlapping between layers, layer and layer
Spacing 1-2mm, longitudinal overlapped 3-4mm, plane shuttering panels and curved baffle can be adjusted and arc source target in 10mm between 100mm
The distance in face.
Arc source anode is the column construction with water cooling, and arc source anode is equipped with anode cover plate backwards to pivoted frame side.
The arc source, baffle, pivoted frame indirect mutual independent power supply, power supply use bipolar pulse, pulse frequency 5-
80kHz, duty ratio 0.2-1.0.
A kind of technique improving hard coat and substrate binding force, it is characterised in that: the following steps are included:
(a) clean: to substrate need to deposit hard protection level ground, polishing treatment, then using solvent carry out ultrasonic wave
Cleaning；
(b) cleaning rear substrate after drying, is hung on vacuum chamber pivoted frame, is closed furnace, is evacuated to base vacuum；
(c) pivoted frame is started, working gas is passed through and keeps pressure in vacuum tank in 0.02-6Pa, arc current 40-250A, voltage is
10-40V, baffle meet cathode 50-300V, and pivoted frame meets positive 50-500V, are heated 10-60 minutes, are led to substrate using electron bombardment
Stop electron bombardment when crossing infrared radiation thermometer measurement substrate surface temperature to 200-700 DEG C of suitable temperature；Baffle is kept to connect cathode
50-300V, pivoted frame meet cathode 50-500V, using working gas ion bombardment to substrate etch cleaner 10-60 minutes；Using gear
Plate meets positive 50-200V, and pivoted frame meets cathode 400-1000V, is passed through working gas and keeps pressure in vacuum tank in 0.02-1.5Pa,
Using the bombardment of arc source metal ion injection substrate 10-30 minutes；
(d) subsequent deposition ceramic/metal ceramic hard coating.
In the step c, after substrate etch cleaner, when needing to carry out stronger etching to substrate, then using gear
Plate meets cathode 50-200V, and pivoted frame meets cathode 200-400V, reduces pressure in vacuum tank to 0.02-3Pa, using arc source metal ion
Bombarding base material etch cleaner 10-60 minutes.
The working gas is inertia discharge gas such as argon gas, helium and hydrogen；The reaction gas used is nitrogen source and carbon
Source gas such as nitrogen, ammonia, methane, acetylene.
In the step c, working gas is passed through after injecting substrate 10-30 minutes using the bombardment of arc source metal ion and is contained
Nitrogen/carbon containing reaction gas and keep pressure in vacuum tank between 0.02-2Pa, working gas and reaction gas intrinsic standoff ratio be 1:2 extremely
1:16 keeps power cathode between baffle and arc source to meet baffle 50-200V, and power cathode switches through frame 400- between baffle and pivoted frame
1000V injects substrate 5-20 minutes using nitrogen and carbon ion bombardment, and nitrogen, carbon ion implantation depth are lower than metal ion implantation
Depth.
The device and technique of raising physical vapour deposition (PVD) hard coat and substrate binding force of the invention, have and save sky
Between, the characteristics of operation is simple, meanwhile, the present apparatus and technique can make substrate surface cleaning more thorough, regulate and control substrate table
Surface roughness, activated substrate surface (refinement substrate surface crystal grain), is suitable for various metal bases, and can be according to different gold
The characteristics of belonging to substrate selects different technique, effectively increases the product surfaces such as cutter, mold, mechanical key components and lockset
The binding force of hard protection coatings and matrix.
Detailed description of the invention
Fig. 1 is the schematic illustration for improving the device of physical vapour deposition (PVD) hard coat and substrate binding force.
Fig. 2 is the schematic illustration of electronics heating process.
Fig. 3 is the schematic illustration of working gas Ion Cleaning process.
Fig. 4 is the schematic illustration of metal ion cleaning process.
Fig. 5 is the external structure that embodiment one improves physical vapour deposition (PVD) hard coat and substrate binding force.
Fig. 6 is the internal structure chart that embodiment one improves physical vapour deposition (PVD) hard coat and substrate binding force.
Fig. 7 is the external structure that embodiment two improves physical vapour deposition (PVD) hard coat and substrate binding force.
Fig. 8 is the internal structure chart that embodiment two improves physical vapour deposition (PVD) hard coat and substrate binding force.
In figure: 10, vacuum chamber, 110, arc source target, 111, arc source anode, 12, baffle, 13, pivoted frame, 1110, plane arc
Source target, 14, anode sunshading board, 112, plane shuttering panels, 212, curved baffle.
Specific embodiment
The present invention is as follows using the principle of vacuum evaporation, magnetron sputtering technique and arc ion plating (aip): vacuum evaporation coating
Film is under vacuum conditions, to be allowed to vaporize with evaporator heating evaporation substance, evaporation particle stream is emitted directly toward substrate and in substrate
It is upper to deposit the technology for forming solid film.Its major advantage is that equipment and technology is relatively simple, can be deposited very pure
Film layer can also prepare the film layer with specific structure and property；The working principle of magnetron sputtering technique is: in vacuum chamber, passing through
Inert gas such as ar atmo is ionized into argon ion and electronics by electric discharge, and the electronics under magnetic fields and constraint increases and argon original
Son further hits against and generates more argon ions and secondary electron.Argon ion accelerates to bombard metallic target under the action of electric field
Material, sputters a large amount of target atom and high-speed motion to substrate surface forms a film.The advantages of this method is film quality height, structure
It is fine and close, good with substrate adhesive force.Arc ion plating (aip) is combined with a kind of PVD technique that evaporation develops with sputtering technology.
In vacuum chamber, metal targets evaporation carries out in gas discharge, by collide and electronic impact formed gas and metal from
Son, these ions fly at a high speed substrate under electric field action and form coating, wherein the emitted energy of metal ion up to 10~
100eV.The major advantage of arc ion plating is the coating and lining that the ionization level of target is high, coating deposition rate is fast, prepared
Diffusion bond has good adhesive force, and compact structure between bottom.
The present invention relates to surfacecti proteon, modified field, for conventional physical vapor prepare hard coat pretreatment process and
The hypodynamic problem in conjunction with substrate of hard coat existing for technique proposes on the basis of original physical vapor deposition device
A kind of device and technique improving physical vapour deposition (PVD) hard coat and substrate binding force.The device is by insertion vacuum chamber cavity wall
Column/plane arc source and it is placed in the front distance, the adjustable baffle in position, and corresponding independent power supply composition.Wherein,
Baffle is connected by being made of conductive, highly heat-conductive material, using suspension or supporting way with vacuum-chamber wall.By adjusting arc source, gear
Current potential between plate, suspension substrate pivoted frame and vacuum-chamber wall, realizes the plasma and its ionization working gas emitted arc source
Effective control of ion.Corresponding technique is that (mechanical lapping polishing, drying, pivoted frame suspension, is taken out at ultrasonic cleaning for conventional pre-treatment
Vacuum) on the basis of electronics heating, gas ion/metal arc ion etching cleaning and metal ion implantation, connect hard later
The physical vapour deposition (PVD) of coating.
The device of raising PVD hard coat and substrate binding force of the invention is by between arc source, baffle 12, pivoted frame 13
Current potential conversion control the output of electronics or ion in plasma, wherein arc source, baffle, pivoted frame and vacuum chamber (connect
Ground terminal) it is all electric potential floating state, the anode in the discharge process of arc source is also electric potential floating, arc source with vacuum chamber (ground terminal)
Anode is assemblied in arc source periphery；Example structure schematic diagram in the present invention is brief diagram, and section components are simultaneously not drawn into (Inlet and outlet water
Cold pipeline, external electrode, arc source internal structure, pivoted frame drive mechanism, SI semi-insulation component etc.), but do not influence in the present invention
Structure illustrates pole explanation.
Referring to Fig. 1, shown in a kind of schematic diagram for the device improving PVD hard coat and substrate binding force: the device includes
It is assemblied in the multiple groups arc source of vacuum chamber 10, and is assemblied in the baffle 12 in front of arc source, before preventing deposition hard coat
Pollution；The distance between baffle 12 and arc source, position are adjustable, and pivoted frame 13 is assemblied in vacuum chamber center；Wherein arc source
Power cathode terminate on cathode arc source target surface 110, anode terminate on the arc source anode 111 being assemblied near arc source；Solely
Vertical baffle power supply and pivoted frame power supply is connected with baffle 12 and pivoted frame 13 respectively, another pole of two of them power supply and vacuum chamber
10(ground terminal) it connects.
Referring to fig. 2, shown in the schematic illustration of electronics heating process: arc occurs for the striking under certain vacuum degree of arc source current
Light discharges, and in discharge process, electronics is by peritropous anode movement, and the cathode of baffle power supply connects on baffle 12 at the same time
(being negative electricity on baffle), the anode of pivoted frame power supply connects on pivoted frame 13 (being positive electricity on pivoted frame), and electronegative baffle will accelerate electricity
Son is to anode movement, and the higher positively charged pivoted frame (pivoted frame potential is much larger than arc source anode potential) of potential will largely absorb
Electronics during arc discharge, the substrate on high energy electron bombardment pivoted frame accelerated in discharge process by baffle cathode, substrate
Surface temperature rises.
Referring to Fig. 3, shown in the schematic illustration of working gas Ion Cleaning (injection) process: arc source current is in certain vacuum
Spend lower striking and occur arc discharge, in discharge process, electronics is by peritropous anode movement, at the same time, baffle power supply it is negative
Pole connects on baffle (being negative electricity on baffle), and the cathode of pivoted frame power supply connects on pivoted frame (pivoted frame is negative electricity), electronegative baffle
Electronics will be accelerated to the anode movement in arc source, during the motion electronics the indoor working gas of vacuum chamber will be activated from
China, extensive work gas from the ion after China in the electronegative pivoted frame potential of electronegative baffle (pivoted frame potential be greater than) electricity
Move under the action of to pivoted frame, from magnificent working gas ion bombardment substrate surface under the action of electric field, can to substrate into
Row cleaning.
The process of working gas ion implanting is identical as the principle of working gas Ion Cleaning, the concentration of working gas and
The negative potential applied on pivoted frame increases, so that the working gas (carbon ion, Nitrogen ion) from China bombards base with higher energy
Material surface, and realize ion implanting.
During electronics heating process and working gas ion, baffle all connects negative electricity, main function are as follows: on the one hand will
The bulky grain and metal ion burst out during arc discharge out blocks, and is deposited on baffle, and another aspect negative potential will add
Fast electronics is to anode movement.
Fig. 4 is participated in, metal ion cleans shown in the schematic illustration of (injection) process: arc source current is under certain vacuum degree
Arc discharge occurs for striking, and in discharge process, electronics is by peritropous anode movement, and at the same time, the anode of baffle power supply connects
On baffle (being positive electricity on baffle), the cathode of pivoted frame power supply connects on pivoted frame (pivoted frame is negative electricity), and positively charged baffle will be put
Electronics in electric process and the bulky grain for bursting out out absorb, while will accelerate metal cation, the metal cation of acceleration by
Under the influence of the electric field of electronegative pivoted frame, electronics will be accelerated to move to pivoted frame, electric ion bombardment substrate table under the action of electric field
Face can clean substrate.
The process of metal ion implantation is identical as the principle that metal ion cleans, the cathode applied in vacuum degree and pivoted frame
Potential increases, so that metal cation is with higher ability bombarding base material surface, and realizes ion implanting.
During metal ion cleans (injection), baffle connects positive electricity, main function are as follows: on the one hand by arc discharge
The bulky grain for bursting out out in journey, which blocks, is deposited on baffle and absorbs electronics, and another aspect positive electrode potential will accelerate cation to negative
Pole (pivoted frame) movement.
It is illustrated below with reference to specific embodiment:
Embodiment 1: it when selecting plane arc source, should be made of 2-4 arc source along every group of arc source of vacuum chamber short transverse, to ensure
It being capable of the entire vacuum chamber height of uniform fold；When arc source is 1 group, this group of arc source position should be chosen close to vacuum chamber air inlet.
In the present embodiment, a kind of raising PVD hard coat of planar cathode arc and the device of substrate binding force and technique are referring to Fig. 5 and figure
Shown in 6: assembly is by four groups of plane arc source targets on the vacuum chamber 10 of eight side row of inscribe, and every group has 3 arc source targets 1110, wherein arc
Electric potential floating between source and vacuum chamber, arc source anode 111 are assemblied in 1110 periphery of arc source target, arc source anode in the present embodiment
111 be the column construction with water cooling, for the stroke for improving electronics, is blocked to the anode backwards to pivoted frame direction, anode
Electric potential floating between shield 14 and vacuum chamber 10, arc source anode 111.
Plane shuttering panels 112 before arc source are all made of supporting way and are connected with vacuum-chamber wall, and are realized by insulation assembly
Current potential insulation.The size of plane shuttering panels 112 is 3 times of arc source, protect position when baffle is in farthest arc of recess source can block to
Plate substrate.Baffle before arc source is made of bronze, surface selection 2-10 μm of etch resistant SiC coating of coating；It is kept off in the present embodiment
Plate is 2 layers of structure, and be overlapping supplement between layers, middle layer and interlamellar spacing 2mm, longitudinal overlapped 4mm；Before arc source
Baffle can by studdle from 10mm to 100mm between adjust at a distance from the target surface of arc source.
When using arc source for plane arc, each arc source to single group arc source and corresponding baffle be respectively adopted independent current source into
Row control.Arc source current, baffle power supply, pivoted frame power supply are independent power supply, and power supply uses bipolar pulse, pulse frequency
5-80kHz, duty ratio 0.2-1.0.
Substrate can be the materials such as pure metal, alloy and cermet.Below by taking textile machine crochet hook as an example, to the present apparatus
Under the deposition of TiN coating the technique for promoting the binding force between substrate and coating is illustrated.
After crochet hook is carried out sandblasting-polishing-paraffin removal-oil removing-rinsing-drying and processing, for use.It will be through overground, throwing and cleaning
Crochet hook later is put into vacuum chamber and hangs on pivoted frame.Electric arc target uses 4 groups of 12 plane arc source targets 1110, and target purity is
99.99%Ti target arranges in vacuum chamber in an angle of 90 degrees.Baffle is adjusted to 30mm before being fixed to Ti target, vacuum chamber is closed and simultaneously takes out very
Sky is to base vacuum 4 × 10-3After Pa, it is passed through argon gas and keeps vacuum chamber operating pressure 0.05Pa；Using bipolar pulse power supply, frequency
Rate is 20kHz, duty ratio 50%.Baffle connects cathode；Pivoted frame supply voltage is set as 400V, and pivoted frame connects anode.Connect 12 electricity
Arc power, electric current are 80A, and voltage is 20V, are heated 30 minutes using electron bombardment to substrate first, pass through infrared measurement of temperature
It is 400 DEG C that instrument, which measures substrate surface temperature,；Argon flow is improved to vacuum chamber operating pressure 0.3Pa, keeps baffle to connect cathode, electricity
Pressure is 150V, and pivoted frame connects cathode, and voltage 400V is connect using argon ion bombardment to substrate etch cleaner 25 minutes with rear baffle
Anode, voltage 150V, pivoted frame connect negative electricity, voltage 200V, using Titanium ion pair substrate etch cleaner 10 minutes, then
Continue to be passed through argon gas and keeps pressure in vacuum tank linearly to improve pivoted frame negative voltage (200V-800V, 5 minutes) in 0.2Pa and keep
800v voltage metal ion implanting 15 minutes.Cathode voltage 50V is met with rear baffle, pivoted frame connects cathode, voltage 80V, deposited metal
Titanium layer 10 minutes.Argon flow is reduced, nitrogen is passed through, sets the two intrinsic standoff ratio as 1:4, and keeping pressure in vacuum tank is 0.2Pa,
Coating of TiN Film 40 minutes.After plated film, opens furnace body circulation cold and hot water supply system and chamber is cooled down.Circulating water temperature
Degree is set as 20 DEG C, and workpiece cools to 160 DEG C or less taking-ups with the furnace under vacuum conditions.
Crochet hook matrix mill, throwing and cleaning rear surface roughness Ra value are 0.034 micron, surface roughness Ra value after plated film
It is 0.182 micron；Matrix surface hardness rises to 1872HV0.01 after plated film, and when compared to non-coating, service life promotes 10 times.
Illustrate: the electronics heating of substrate, gas ion cleaning, gas ion injection, metal ion are cleaned in the present apparatus,
The pretreatment process such as metal ion implantation can carry out different process according to substrate different in actual production, processing
Time and technological parameter can be changed accordingly.
Embodiment 2: a kind of raising PVD hard coat of cylindrical cathodes arc and the device and technique of substrate binding force
Shown in referring to figs. 7 and 8: assembly is by four groups of cylindricality arc source targets, cylindricality arc source target on the vacuum chamber 210 of eight side row of inscribe
Electric potential floating between 2110 and vacuum chamber 10, arc source anode 111 are assemblied in 2110 periphery of arc source target, arc source in the present embodiment
Anode 111 is the column construction with water cooling, for the stroke for improving electronics, is blocked to the anode backwards to pivoted frame direction,
Electric potential floating between anode cover plate 14 and vacuum chamber 10, arc source anode 111.
Curved baffle 212 before arc source is all made of hang and is connected with vacuum-chamber wall, and is realized by insulation assembly
Current potential insulation.The dimension width of baffle is 3 times of arc source diameter, and length is 1.2 times, and curved baffle 212 is made of bronze, surface
Selection 2-10 μm of etch resistant SiC coating of coating；Baffle is 3-tier architecture in the present embodiment, and be overlapping supplement between layers,
Middle layer and interlamellar spacing 2mm, longitudinal overlapped 4mm；Baffle before arc source can by fixed waist-shaped hole sliding from 10mm to
It is adjusted at a distance from the target surface of arc source between 100mm.
Arc source current, baffle power supply, pivoted frame power supply are independent power supply, and power supply uses bipolar pulse, pulse frequency
Rate 5-80kHz, duty ratio 0.2-1.0.
Below by taking the hot-cast aluminium automobile die of H13 mould steel as an example, to the deposition of the TiAlN coating under the present apparatus to promotion
The technique of binding force between substrate and coating is illustrated.
Mold polish-paraffin removal-oil removing-rinsing-drying and processing after, for use.By the mould after overground, throwing and cleaning
Tool is put into vacuum chamber and hangs on pivoted frame.Electric arc target uses 4 column purity for 99.99%TiAl target, in vacuum chamber 90 degree
Even arrangement.Baffle is adjusted to 25mm before being fixed to TiAl target, vacuum chamber is closed and is simultaneously evacuated to base vacuum 4 × 10-3After Pa, lead to
Enter argon gas and keeps vacuum chamber operating pressure 0.3Pa；Baffle voltage is adjusted to 200V, and baffle connects cathode；Pivoted frame connects anode, power supply
Voltage is set as 500V.3 arc powers (using bipolar pulse, frequency 20kHz, duty ratio 80%) is connected, electric current is
75A, voltage are 20V, are heated 30 minutes using electron bombardment to substrate first, measure substrate surface temperature by infrared radiation thermometer
Degree is 460 DEG C；Positive (200V) is connect using baffle, pivoted frame connects cathode (400V), adjusts pressure in vacuum tank to 0.02-0.5Pa, adopts
With TiAl ion bombardment substrate etch cleaner 30 minutes；Positive (200V) is connect using baffle, pivoted frame meets cathode (800V), continues to lead to
Enter argon gas and keep pressure in vacuum tank in 0.1Pa, is injected substrate 20 minutes using TiAl ion bombardment；It is passed through argon gas and nitrogen simultaneously
Gas and keep pressure in vacuum tank between 0.4Pa, working gas and reaction gas intrinsic standoff ratio be 1:6.Baffle is kept to connect cathode
(200V), pivoted frame meet cathode (600V), are injected 15 minutes using Nitrogen ion bombardment to substrate；Positive (200V) is connect using baffle,
Pivoted frame connects cathode (200V), continues while being passed through argon gas and nitrogen, sets the two intrinsic standoff ratio as 1:4, and keep pressure in vacuum tank
For 0.2Pa, arc source current duty ratio is adjusted to 50%, and depositing titanium nitride aluminized coating 60 minutes.After coating deposits, furnace is opened
Body circulation cold and hot water supply system cools down chamber.Circulating water temperature is set as 20 DEG C, workpiece furnace cooling under vacuum conditions
It is taken out to 180 DEG C or less.
Matrix mill, throwing and cleaning rear surface roughness Ra value are 0.017 micron, using TiAl ion bombardment etch cleaner 30
Minute rear surface roughness Ra value is 0.322 micron, and surface roughness Ra value is 0.182 micron after plated film；Matrix after plated film
Surface hardness rises to 1097.25HV0.05 by 481.99HV0.05.
Illustrate: the electronics heating of substrate, gas ion cleaning, gas ion injection, metal ion are cleaned in the present apparatus,
The pretreatment process such as metal ion implantation can carry out different process according to substrate different in actual production, processing
Time and technological parameter can be changed accordingly.
The present invention is described by embodiment, and those skilled in the art know, is not departing from spirit of the invention
In the case where range, various changes or equivalence replacement can be carried out to these features and embodiment.In addition, in religion of the invention
It leads down, can modify to these features and embodiment to adapt to particular situation and material without departing from essence of the invention
Mind and range.Therefore, the present invention is not limited to the particular embodiment disclosed, fallen with claims hereof
Embodiment in range belongs to protection scope of the present invention.
Claims (10)
1. a kind of device for improving hard coat and substrate binding force, it is characterised in that: install arc source inside vacuum chamber (10)
With baffle (12), arc source includes arc source target (110) and arc source anode (111), installs baffle (12) in front of arc source, vacuum chamber
(10) pivoted frame (13) are installed at center, the power cathode in arc source terminates on cathode arc source target (110), the power positive end in arc source
It connects on the anode (111) being assemblied near arc source；Independent baffle power supply and pivoted frame power supply respectively with baffle (12) and pivoted frame
(13) connect, another pole of two of them power supply connect with vacuum chamber (10), arc source anode, baffle (12), pivoted frame (13) and
Vacuum chamber (10) is all electric potential floating state.
2. a kind of device for improving hard coat and substrate binding force according to claim 1, it is characterised in that: described true
Plenum chamber (10) is inscribe octagon, and evenly distributed installation 1-4 group arc source in vacuum chamber (10), arc source target (110) is plane
Arc source target (1110) or cylindricality arc source target (2110), plane arc source target (1110) front mounting plane baffle (112), cylindricality arc source
Target (2110) front is installed by curved baffle (212).
3. a kind of device for improving hard coat and substrate binding force according to claim 2, it is characterised in that: described flat
Face baffle (112) is connected using supporting way with vacuum chamber (10) inner wall, and passes through insulation assembly and vacuum chamber (10) electricity
Position insulation, the length and width of plane shuttering panels (112) is 2-3 times of plane arc source diameter；The curved baffle (212) is using outstanding
Extension mode is connected with vacuum chamber (10) inner wall, and is insulated by insulation assembly and vacuum chamber (10) current potential, curved baffle
(212) length is 1.1-1.5 times of the length of column arc, and width is 2-3 times of column arc dia.
4. a kind of device for improving hard coat and substrate binding force according to claim 2, it is characterised in that: described flat
Face baffle (112) and curved baffle (212) are made of conductive, highly heat-conductive material, plane shuttering panels (112) and curved baffle (212)
Surface coats 2-10 μm of etch resistant SiC coating, and plane shuttering panels (112) and curved baffle (212) are layer 2-4 structure, layer and layer it
Between be overlapping, layer and interlamellar spacing 1-2mm, longitudinal overlapped 3-4mm, plane shuttering panels (112) and curved baffle (212) can be with
It is adjusted at a distance from the target surface of arc source in 10mm between 100mm.
5. a kind of device for improving hard coat and substrate binding force according to claim 2, it is characterised in that: the arc
Source anode (111) is the column construction with water cooling, and arc source anode (111) is equipped with anode cover plate (14) backwards to pivoted frame side.
6. a kind of device for improving hard coat and substrate binding force according to claim 2, it is characterised in that: the arc
Source, baffle (12), pivoted frame (13) indirect mutual independent power supply, power supply use bipolar pulse, pulse frequency 5-80kHz,
Duty ratio 0.2-1.0.
7. a kind of technique for improving hard coat and substrate binding force, it is characterised in that: the following steps are included:
(a) clean: to substrate need to deposit hard protection level ground, polishing treatment, then using solvent carry out ultrasonic wave
Cleaning；
(b) cleaning rear substrate after drying, is hung on vacuum chamber pivoted frame (13), is closed furnace, is evacuated to base vacuum；
(c) pivoted frame (13) are started, working gas is passed through and keep pressure in vacuum tank in 0.02-6Pa, arc current 40-250A, electricity
Pressure is 10-40V, and baffle (12) meets cathode 50-300V, and pivoted frame (13) meets positive 50-500V, is heated using electron bombardment to substrate
10-60 minutes, stop electron bombardment when measuring substrate surface temperature to 200-700 DEG C of suitable temperature by infrared radiation thermometer；It protects
It holds baffle (12) and meets cathode 50-300V, pivoted frame (13) meets cathode 50-500V, is etched using working gas ion bombardment to substrate
Cleaning 10-60 minutes；Positive 50-200V is connect using baffle (12), pivoted frame (13) meets cathode 400-1000V, is passed through working gas
And keep pressure in vacuum tank in 0.02-1.5Pa, using the bombardment of arc source metal ion injection substrate 10-30 minutes；
(d) subsequent deposition ceramic/metal ceramic hard coating.
8. a kind of technique for improving hard coat and substrate binding force according to claim 7, it is characterised in that: the step
In rapid c, after substrate etch cleaner, when needing to carry out stronger etching to substrate, then cathode 50- is connect using baffle
200V, pivoted frame meet cathode 200-400V, reduce pressure in vacuum tank to 0.02-3Pa, are etched using arc source metal ion bombarding base material
Cleaning 10-60 minutes.
9. a kind of technique for improving hard coat and substrate binding force according to claim 7, it is characterised in that: the work
Making gas is inertia discharge gas such as argon gas, helium and hydrogen；The reaction gas used is nitrogen source and carbon-source gas such as nitrogen, ammonia
Gas, methane, acetylene.
10. a kind of technique for improving hard coat and substrate binding force according to claim 7, it is characterised in that: described
In step c, working gas and nitrogenous/carbon containing reaction gas are passed through after injecting substrate 10-30 minutes using the bombardment of arc source metal ion
Body and keep pressure in vacuum tank between 0.02-2Pa, working gas and reaction gas intrinsic standoff ratio be 1:2 to 1:16, keep baffle
(12) power cathode meets baffle 50-200V between arc source, and power cathode switches through frame 400-1000V between baffle and pivoted frame, using nitrogen
Substrate is injected 5-20 minutes with carbon ion bombardment, nitrogen, carbon ion implantation depth are lower than metal ion implantation depth.
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| CN113151797A (en) * | 2021-04-26 | 2021-07-23 | 东北大学 | Novel ion cleaning process based on hard alloy surface plating ta-C film |
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| CN114807837A (en) * | 2022-03-11 | 2022-07-29 | 松山湖材料实验室 | Surface treatment equipment |
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