CN109055894A - A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride - Google Patents
A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride Download PDFInfo
- Publication number
- CN109055894A CN109055894A CN201811058725.0A CN201811058725A CN109055894A CN 109055894 A CN109055894 A CN 109055894A CN 201811058725 A CN201811058725 A CN 201811058725A CN 109055894 A CN109055894 A CN 109055894A
- Authority
- CN
- China
- Prior art keywords
- titanium nitride
- sputtering
- dimethicone
- magnetic control
- surface magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
Abstract
The invention belongs to magnetron sputtering techniques, and in particular to a kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride.It is characterized in that carrying out as follows: step 1, sputtering pre-treatment；Step 2, sputter coating parameter regulation；Stripping film in step 3, vacuum chamber；Step 3, shutdown sampling.The invention has the advantages that: being sunk to dimethicone surface magnetic control sputtering by this method, process control is simple, and film thickness is controllable, and no titanium nitride fold is formed.
Description
Technical field
The invention belongs to magnetron sputtering techniques, and in particular to a kind of dimethicone surface magnetic control sputtering depositing titanium nitride
Method.
Background technique
Magnetron sputtering deposition is the particle bombardment target material surface using enough high-energy, obtains the atom in target and reaches
High energy moves under the influence of a magnetic field in the high energy particle that surface issues, is eventually deposited at matrix surface, forms metal foil
Film.The industrial coating technique that magnetron sputtering has become a kind of maturation is widely used in metal surface since its is outstanding a little
Modified field.
Titanium nitride is widely used in sensor field as a kind of conventional metal material, and especially titanium nitride metal is thin
Film is as conventional strain gauge materials'use.
Dimethicone is colourless not volatile liquid, sputters titanium nitride, titanium nitride and substrate in dimethyl-silicon oil meter face
Between due to dimethicone presence, physically be separation, can by titanium nitride membrane by the cleaning of organic solvent
With simple separation.Chinese invention patent publication number CN1730716A has recorded the system of Liquid matrix surface novel metallic film in detail
Standby technology, but metallic film is stripped out for a long time in air, causes oxidation and the fold of metallic film, direct shadow
The use of metallic film is rung.
Titanium nitride metal film is deposited on liquid surface, the stress variation of dimethicone, directly reaction is on its surface
In the pattern variation of titanium nitride membrane.A large amount of folds are can be found that by micro- sem observation titanium nitride surface.
Summary of the invention
In order to solve the above-mentioned technical problem the present invention, proposes a kind of dimethicone surface magnetic control sputtering depositing titanium nitride
Method.
A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride, it is characterised in that: carry out as follows:
Step 1, sputtering pre-treatment, carry out cleaning polishing to silicon wafer substrate, and dimethicone is coated in silicon chip surface；Using magnetic
Sputtering method is controlled, target selects titanium target, and cleaning polishing target material surface, working gas is high pure nitrogen；
Step 2, sputter coating parameter regulation, magnetron sputtering process, using base vacuum 1.0-5.0 × 10-4Pa is filled with nitrogen
As reaction gas, nitrogen flow is controlled in 30-105sccm, working vacuum 1.0-8.0 × 10-1Pa splashes 5 minutes in advance, and magnetic control splashes
Source power adjustable range 100-120W, back bias voltage 0V are penetrated, is sputtered 10-15 minutes；
Step 3 quickly removes sputtering titanium nitride membrane under vacuum chamber constant temperature；
Step 4, shutdown test close system after one hour, barrier gate plate valve closes molecular pump, and molecular pump is closed after stopping working
Solenoid valve closes mechanical pump, takes sample；
The stripping process of the titanium nitride membrane carries out under sputtering chamber vacuum environment, and splitting time was controlled at 0-2 hours.
The removing of the titanium nitride membrane needs the immersion of organic solvent, and dimethicone is cleaned in soaking process.
The titanium nitride membrane deposition, removing and cleaning are carried out under isoperibol.
Titanium nitride fold is formed under the action of exerting oneself in dimethicone, when dimethyl-silicon oil temperature changes
When, internal stress acts on titanium nitride membrane, and this effect is the accumulated time for needing a few houres or even several days.Therefore, it to obtain
The titanium nitride membrane smooth to surface will be accomplished: (1) film splitting time is short;(2) deposition process is to stripping process constant temperature；(3)
It obtains under vacuum conditions.
The invention has the advantages that: pass through this method, film simple to the heavy process control of dimethicone surface magnetic control sputtering
Thickness is controllable, and no titanium nitride fold is formed.
Specific embodiment
It is specifically described below with reference to embodiment:
Embodiment 1:
1) silicon wafer or glass for selecting suitable dimension are had children outside the state plan cleaning substrate surface with organic solvent, have been cleaned as deposition substrate
Finish, cold air drying is spare；
2) target selects titanium target, and sand paper sanding and polishing target material surface is mounted on magnetron sputtering target position；
3) dimethicone is coated uniformly on substrate surface, has coated sample and has been put into sputtering position, it is high to adjust magnetron sputtering target position
Degree;
4) vacuum chamber, magnetron sputtering process, using base vacuum 1.0-5.0 × 10-4Pa is filled with nitrogen as reaction
Gas, nitrogen flow are controlled in 30-105sccm, working vacuum 1.0-8.0 × 10-1Pa splashes 5 minutes, magnetron sputtering source power in advance
Adjustable range 100-120W, back bias voltage 0V are sputtered 10-15 minutes；
5) sputtering titanium nitride membrane is quickly removed under vacuum chamber constant temperature；
6) system is closed, barrier gate plate valve closes molecular pump, and molecular pump closes solenoid valve after stopping working, and closes mechanical pump, sampling
Product；
7) microscope is adjusted, dimethyl-silicon oil meter face depositing titanium nitride film surface appearance is observed.
Embodiment 2:
The process to titanium nitride thin film stripping is completed in vacuum chamber by manipulator, this process meets the following conditions: (1)
Film splitting time is short;(2) deposition process is to stripping process constant temperature；(3) it obtains under vacuum conditions.Stripping process is divided into:
1) the titanium nitride thin membrane sample deposited is put into acetone soln in vacuum chamber；
2) substrate, dimethicone, titanium nitride membrane and acetone soln keep constant temperature；
3) after dimethicone is dissolved, titanium nitride membrane falls off in constant temperature acetone soln；
4) pumped vacuum systems is closed rapidly, takes out titanium nitride membrane and constant temperature acetone soln, titanium nitride thin is dried into preservation.
Removing titanium nitride membrane carries out in a short time, more preferably less than 2 hours, prevents the appearance of fold.
Claims (4)
1. a kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride, it is characterised in that: carry out as follows:
Step 1, sputtering pre-treatment, carry out cleaning polishing to silicon wafer substrate, and dimethicone is coated in silicon chip surface；Using magnetic
Sputtering method is controlled, target selects titanium target, and cleaning polishing target material surface, working gas is high pure nitrogen；
Step 2, sputter coating parameter regulation, magnetron sputtering process, using base vacuum 1.0-5.0 × 10-4Pa is filled with nitrogen work
For reaction gas, nitrogen flow is controlled in 30-105sccm, working vacuum 1.0-8.0 × 10-1Pa splashes 5 minutes, magnetron sputtering in advance
Source power adjustable range 100-120W, back bias voltage 0V are sputtered 10-15 minutes；
Step 3 quickly removes sputtering titanium nitride membrane under vacuum chamber constant temperature；
Step 4, shutdown test close system after one hour, barrier gate plate valve closes molecular pump, and molecular pump is closed after stopping working
Solenoid valve closes mechanical pump, takes sample.
2. a kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride according to claim 1, it is characterised in that:
The stripping process of titanium nitride membrane carries out under sputtering chamber vacuum environment, and splitting time was controlled at 0-2 hours.
3. a kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride according to claim 1, it is characterised in that:
The removing of titanium nitride membrane needs the immersion of organic solvent, and dimethicone is cleaned in soaking process.
4. according to claim 1 or a kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride described in claim 3,
It is characterized by: titanium nitride membrane deposits, removing and cleaning are carried out under isoperibol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811058725.0A CN109055894A (en) | 2018-09-12 | 2018-09-12 | A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811058725.0A CN109055894A (en) | 2018-09-12 | 2018-09-12 | A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride |
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| Publication Number | Publication Date |
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| CN109055894A true CN109055894A (en) | 2018-12-21 |
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| CN201811058725.0A Pending CN109055894A (en) | 2018-09-12 | 2018-09-12 | A kind of method of dimethicone surface magnetic control sputtering depositing titanium nitride |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671510A (en) * | 2016-04-07 | 2016-06-15 | 乔宪武 | Liquid phase substrate deposition metal film separation device |
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2018
- 2018-09-12 CN CN201811058725.0A patent/CN109055894A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671510A (en) * | 2016-04-07 | 2016-06-15 | 乔宪武 | Liquid phase substrate deposition metal film separation device |
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Application publication date: 20181221 |