CN109037454B - Organic photomultiplier detector based on surface plasmon polariton - Google Patents

Organic photomultiplier detector based on surface plasmon polariton Download PDF

Info

Publication number
CN109037454B
CN109037454B CN201810831028.8A CN201810831028A CN109037454B CN 109037454 B CN109037454 B CN 109037454B CN 201810831028 A CN201810831028 A CN 201810831028A CN 109037454 B CN109037454 B CN 109037454B
Authority
CN
China
Prior art keywords
metal
layer
active layer
organic
organic active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810831028.8A
Other languages
Chinese (zh)
Other versions
CN109037454A (en
Inventor
张叶
梁强兵
崔艳霞
李国辉
王文艳
冀婷
郝玉英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyuan University of Technology
Original Assignee
Taiyuan University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyuan University of Technology filed Critical Taiyuan University of Technology
Priority to CN201810831028.8A priority Critical patent/CN109037454B/en
Publication of CN109037454A publication Critical patent/CN109037454A/en
Application granted granted Critical
Publication of CN109037454B publication Critical patent/CN109037454B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention relates to the field of organic photomultiplier detectors, in particular to an organic photomultiplier detector based on surface plasmon polariton, which comprises the following components in parts by weight: indium Tin Oxide (ITO) is used as an anode layer, poly (3,4-ethylenedioxythiophene) -polystyrene sulfonic acid PEDOT: PSS is used as an anode buffer layer, any one of 3-hexylthiophene P3HT, poly [ [9- (1-octylnonyl) -9H-carbazole-2,7-diyl ] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl PCDTBT and PSBTBT: PC71BM is used as a donor material of an organic active layer, fullerene derivative PCBM is used as an acceptor material of the organic active layer, the donor material and the acceptor material form the organic active layer, an integrated metal nano grating matrix and a metal thin film are used as a cathode layer, and the nano grating matrix is embedded in the organic active layer.

Description

Organic photomultiplier detector based on surface plasmon polariton
Technical Field
The invention relates to the field of organic photomultiplier detectors, in particular to a battery structure which uses a rectangular metal grating array as a cathode and excites Surface Plasmon polaritons (Mode) to enhance light absorption of an active layer.
Background
The organic photomultiplier has the advantages of light weight, low cost, wide material sources, flexibility and the like, and is widely concerned by researchers in recent years. The External Quantum Efficiency (EQE) value of the detector is improved by utilizing an electron (hole) trap to assist holes (electrons) to form a tunneling effect. But the response speed of the organic polymer photomultiplier is relatively slow, and the collection performance of the organic polymer photomultiplier on carriers is poor. Researchers have addressed such problems by incorporating inorganic nano-or organic dye particles into the active layer of a bulk heterojunction to achieve the photomultiplier phenomenon. For example: chen et al doped inorganic nano cadmium antimonide (CdTe) into P3HT: PCBM (mass ratio 1:1) active layer, and brought a lot of electron traps by CdTe introduction, thereby realizing photomultiplier effect, and its EQE maximum value can reach 8000%. Wang et al found that by adjusting the atomic self-assembly time of the electron donor P3HT and changing the arrangement of the P3HT molecules, the hole mobility can also be improved, so that the external quantum efficiency reaches 115800%. The organic photomultiplier is basically similar to the organic photovoltaic device in structure, and in the organic photovoltaic device, researchers use a metal nano structure to excite surface plasmons and efficiently capture incident light into an active layer, so that the light absorption efficiency of the device is improved, the external quantum efficiency of the device is increased, and the carrier collection efficiency is enhanced. The external quantum efficiency is also one of the key performance indexes of the photomultiplier detector, and the device with higher external quantum efficiency has higher response speed and response rate and is more sensitive. Thus, improving external quantum efficiency is an important aspect of optimizing photomultiplier detector performance.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to utilize a metal grating back electrode (cathode) to improve the light absorption rate of an organic photomultiplier detector.
The technical scheme adopted by the invention is as follows: an organic photomultiplier detector based on surface plasmon polariton: indium Tin Oxide (ITO) is used as an anode layer, poly (3,4-ethylenedioxythiophene) -polystyrene sulfonic acid PEDOT: PSS is used as an anode buffer layer, any one of 3-hexylthiophene P3HT, poly [ [9- (1-octylnonyl) -9H-carbazole-2,7-diyl ] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl PCDTBT and PSBTBT: PC71BM is used as a donor material of an organic active layer, fullerene derivative PCBM is used as an acceptor material of the organic active layer, the donor material and the acceptor material form the organic active layer, an integrated metal nano grating matrix and a metal thin film are used as a cathode layer, and the nano grating matrix is embedded in the organic active layer.
As a preferred mode: the thickness of the anode layer is 180nm, the thickness of the anode buffer layer is 20nm, the thickness of the organic active layer is 100nm, the cross section of a unit nanometer metal column of the metal nanometer grating matrix in the cathode layer is a square with the side length of 20nm, the thickness of the metal nanometer grating matrix in the cathode layer is 32nm, the duty ratio of the metal nanometer grating matrix is 0.75, and the overall thickness of the cathode layer is 200nm.
As a preferred mode: the mass of the donor material in the organic active layer is 100 times the mass of the acceptor material.
As a preferred mode: the cathode layer is made of any one of gold, silver, copper and aluminum and is arranged in the nanometer grating matrix.
As a preferred mode: the integrated metal nano grating matrix and the metal film are manufactured by obtaining the metal film through vacuum evaporation, then obtaining the metal nano grating matrix through laser photoetching, and finally forming the integrated metal nano grating matrix and the metal film.
The invention has the beneficial effects that: the surface plasmon is excited by the metal nano grating matrix, the transmission performance of a current carrier is regulated and controlled by the metal nano grating matrix, and the electron capture of a cathode interface is assisted so as to improve the response speed of the organic photomultiplier. A rectangular array concave-convex pattern is introduced into the interface by a laser photoetching method, and the response speed of the device is greatly improved by exciting surface plasmons.
Drawings
FIG. 1 is a schematic representation of the materials of the various layers of the present invention;
FIG. 2 is a schematic three-dimensional structure of the present invention;
the organic light-emitting diode comprises a substrate, an anode layer, a cathode buffer layer, an organic active layer, an anode buffer layer, a metal nano grating matrix and a metal film, wherein the substrate comprises 1, the anode layer, 2, the anode buffer layer, 3, the organic active layer, 4, the metal nano grating matrix and the metal film are integrated, and 5, the metal nano grating matrix, 6 and the metal film are integrated.
Detailed Description
As shown in fig. 1, an organic photomultiplier detector based on surface plasmon polariton has the following structure: indium Tin Oxide (ITO) with a thickness of 180nm as an anode, and poly (3,4-ethylenedioxythiophene) with a thickness of 20nmPolystyrene sulfonic acid (PEDOT: PSS) is used as an anode buffer layer, and the mass ratio of organic matter P3HT: PC is 100 71 BM is used as an active layer, an integrated silver nano grating (Ag metal grating) matrix and a silver film (Ag film) are jointly used as a back electrode (cathode) of the battery, wherein the cross section width of a single silver column of the silver nano grating matrix is a square of 20nm, the height of the single silver column is 32nm, and the formed structure is ITO (180 nm)/PEDOT: PSS/(20 nm)/P3 HT: PC 71 BM (40 nm)/Ag metal grading/Ag film (200 nm)). The silver film can be obtained by vacuum evaporation; the silver nano grating matrix can be obtained by laser photoetching; all other organic functional layers can be obtained on the indium tin oxide by a spin-coating process.
As shown in fig. 2, a metal nano-grating matrix is connected to the metal thin-film substrate, and the light absorption capability of the active layer is optimized by adjusting the duty ratio of the metal nano-grating in the structure and the height parameter of the metal nano-grating, so that the light absorption efficiency of the active layer is greatly enhanced. The specific manufacturing process is as follows: preparing an anode buffer layer and an active layer on the ITO glass through a spin-coating process; the metal film is prepared by utilizing a vacuum hot-dip coating technology or a magnetron sputtering technology; the metal nanometer grating matrix array is etched on the metal film directly by using the laser photoetching technology to obtain the back electrode. And the metal nano grating matrix is completely embedded in the active layer, so that the organic photomultiplier detector based on surface plasmon polariton is obtained.
The metal nano-grating matrix in the metal back electrode structure is a rectangular array, and the nearest adjacent metal nano-grating units have an ultra-small pitch (5 nm) and a large aspect ratio (32. The metal back electrode structure with the metal nano grating provided by the invention has a remarkable enhancement effect on the light absorption capacity of the active layer, and is structurally and functionally different from the prior art.
The metal nano-grating used in the invention is used as the back electrode of the device, which not only can show good light reflection characteristic, increase the light path of incident light on the active layer, but also can ensure that the surface plasmon polariton can be successfully excited. The metal nano-grating not only can enable the emitted light to be localized in the active layer around the nano-grating to enhance the light absorption, but also enables more electrons to be generated near the metal cathode, narrows the hole tunnel barrier and improves the hole injection efficiency.
The metal material used is one of gold, silver, copper, and aluminum that can excite surface plasmon polaritons.
In the metal cathode, the metal thin film and the metal nano grating are made of the same metal material. The arrangement is a rectangular two-dimensional array. The function is to obtain high-efficiency light absorption performance through surface plasmon excited by the metal nano-grating.
The width and the height of the metal nano grating are respectively 15nm and 32nm.
The duty cycle (width of the metal nanograting compared to its period) of the metal nanograting was 0.75.
The invention is based on the surface plasma technology, and the surface plasmon polariton excited by the metal nano-grating is used for enhancing the light absorption of the active layer of the organic photomultiplier, so that the organic photomultiplier structure with high-efficiency light absorption is obtained.

Claims (1)

1. An organic photomultiplier detector based on surface plasmon polariton, characterized in that: indium tin oxide ITO was used as the anode layer, and poly (3,4-ethylenedioxythiophene) -polystyrene sulfonic acid PEDOT: PSS as an anode buffer layer, 3-hexylthiophene P3HT, poly [ [9- (1-octylnonyl) -9H-carbazole-2,7-diyl ] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl PCDTBT, PSBTBT: any one of PC71BM is a donor material of the organic active layer, a fullerene derivative PCBM is an acceptor material of the organic active layer, the donor material and the acceptor material form the organic active layer, an integrated metal nano-grating matrix and a metal film are used as a cathode layer, and the nano-grating matrix is embedded in the organic active layer;
the thickness of the anode layer is 180nm, the thickness of the anode buffer layer is 20nm, the thickness of the organic active layer is 40-100nm, the cross section of a unit nanometer metal column of the metal nanometer grating matrix in the cathode layer is a square with the side length of 20nm, the thickness of the metal nanometer grating matrix in the cathode layer is 32nm, the duty ratio of the metal nanometer grating matrix is 0.75, and the whole thickness of the cathode layer is 200nm;
the mass of the donor material in the organic active layer is 100 times of that of the acceptor material;
the cathode layer is made of any one of gold, silver, copper and aluminum and is arranged in the nano grating matrix;
the integrated metal nano grating matrix and the metal film are manufactured by obtaining the metal film through vacuum evaporation, then obtaining the metal nano grating matrix through laser photoetching, and finally forming the integrated metal nano grating matrix and the metal film.
CN201810831028.8A 2018-07-26 2018-07-26 Organic photomultiplier detector based on surface plasmon polariton Active CN109037454B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810831028.8A CN109037454B (en) 2018-07-26 2018-07-26 Organic photomultiplier detector based on surface plasmon polariton

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810831028.8A CN109037454B (en) 2018-07-26 2018-07-26 Organic photomultiplier detector based on surface plasmon polariton

Publications (2)

Publication Number Publication Date
CN109037454A CN109037454A (en) 2018-12-18
CN109037454B true CN109037454B (en) 2023-02-17

Family

ID=64646329

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810831028.8A Active CN109037454B (en) 2018-07-26 2018-07-26 Organic photomultiplier detector based on surface plasmon polariton

Country Status (1)

Country Link
CN (1) CN109037454B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110783465B (en) * 2019-11-06 2022-06-21 太原理工大学 Thermal electron photoelectric detector based on 8-hydroxyquinoline aluminum/metal heterojunction
US11245044B2 (en) * 2020-01-14 2022-02-08 Hoon Kim Plasmonic field-enhanced photodetector and image sensor
CN111883664B (en) * 2020-06-30 2022-09-23 西安理工大学 Double-injection multiplication type organic photoelectric detector and preparation method thereof
CN113130761B (en) * 2021-03-19 2022-04-19 太原理工大学 Organic photomultiplier with bidirectional bias response and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102184975A (en) * 2011-04-11 2011-09-14 复旦大学 Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof
CN204333040U (en) * 2015-01-23 2015-05-13 刘红兵 A kind of thin film organic solar battery
CN106129255A (en) * 2016-08-25 2016-11-16 太原理工大学 Organic solar batteries based on extra small cycle silver nanometer column array and preparation method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150018246A (en) * 2013-08-09 2015-02-23 한국전자통신연구원 An organic emitting diode and method of fabricating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102184975A (en) * 2011-04-11 2011-09-14 复旦大学 Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof
CN204333040U (en) * 2015-01-23 2015-05-13 刘红兵 A kind of thin film organic solar battery
CN106129255A (en) * 2016-08-25 2016-11-16 太原理工大学 Organic solar batteries based on extra small cycle silver nanometer column array and preparation method

Also Published As

Publication number Publication date
CN109037454A (en) 2018-12-18

Similar Documents

Publication Publication Date Title
CN109037454B (en) Organic photomultiplier detector based on surface plasmon polariton
Xie et al. Enhanced performance of perovskite/organic-semiconductor hybrid heterojunction photodetectors with the electron trapping effects
CN107591484A (en) It is a kind of to have arrowband and the multiplication type organic photodetector of broadband light detectivity concurrently
Srivastava et al. Plasmonic effect of different nanoarchitectures in the efficiency enhancement of polymer based solar cells: A review
Wang et al. Hybrid polymer/ZnO solar cells sensitized by PbS quantum dots
Zhang et al. Recent advances in highly efficient organic-silicon hybrid solar cells
CN102290529B (en) Individual layer organic solar batteries and preparation method thereof
US20100319765A1 (en) Photovoltaic devices
Liu et al. Unique gold nanorods embedded active layer enabling strong plasmonic effect to improve the performance of polymer photovoltaic devices
CN104603953A (en) Broadband polymer photodetectors using zinc oxide nanowire as an electron-transporting layer
Schmidt et al. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT: PSS anodes
Wang et al. Effect of photogenerated carrier distribution on performance enhancement of photomultiplication organic photodetectors
Liu et al. A new strategy of coupling pyroelectric and piezoelectric effects for photoresponse enhancement of a Cu (In, Ga) Se2 heterojunction photodetector
Li et al. Photo-triggered logic circuits assembled on integrated illuminants and resonant nanowires
Jeon et al. Stamping transfer of a quantum dot interlayer for organic photovoltaic cells
CN111211186A (en) MoS for improving photoelectric detection performance2Phototransistor and method of manufacturing the same
Nair et al. Multi-positional silver nanostructures for high absorption enhancement in polymer solar cells
Zhang et al. Employing easily prepared carbon nanoparticles to improve performance of inverted organic solar cells
Koul et al. Investigation of non-ideality factors for a P3HT: PCBM based bulk heterojunction organic solar cell in presence of silver nanoparticles
Li et al. Orienting the microstructure evolution of copper phthalocyanine as an anode interlayer in inverted polymer solar cells for high performance
Zhang et al. Mechanism of polyfluorene interlayer in ultraviolet photodetector: barrier-blocking electron transport and light-inducing hole injection
Jili et al. Computational investigation of the effect ZnS buffer layer on the hole transport of polymer solar cell
CN107230743B (en) A kind of optoelectronic position sensitive sensor
CN111446372A (en) Wavy ITO transparent electrode and organic solar cell
Liu et al. Efficiency enhancement in organic solar cells with extended resonance spectrum of localized surface plasmon

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant