CN109037396A - A kind of preparation method of the black silicon of high minority carrier life time - Google Patents
A kind of preparation method of the black silicon of high minority carrier life time Download PDFInfo
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- CN109037396A CN109037396A CN201810660220.5A CN201810660220A CN109037396A CN 109037396 A CN109037396 A CN 109037396A CN 201810660220 A CN201810660220 A CN 201810660220A CN 109037396 A CN109037396 A CN 109037396A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 24
- 235000008216 herbs Nutrition 0.000 claims abstract description 19
- 210000002268 wool Anatomy 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003513 alkali Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims abstract description 9
- 230000006378 damage Effects 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 238000012876 topography Methods 0.000 claims abstract description 6
- 239000005416 organic matter Substances 0.000 claims abstract description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 11
- 239000002585 base Substances 0.000 abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- 238000012545 processing Methods 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 235000019441 ethanol Nutrition 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000008236 heating water Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229960000935 dehydrated alcohol Drugs 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation methods of high black silicon of minority carrier life time, are handled using the RCA standard cleaning method in integrated circuit silicon chip surface, remove the organic matter, oxide and mechanical damage of silicon chip surface；Making herbs into wool is carried out to monocrystalline silicon piece using traditional alkali alcohol system, obtains the surface of good " pyramid " structure；CuSO is utilized to the silicon wafer after making herbs into wool4Secondary treatment is carried out with HF system, to obtain nano-pore structure on " pyramid " surface.The present invention modifies the surface topography of the silicon wafer after secondary treatment using weak base, to improve the minority carrier life time of silicon wafer.
Description
Technical field
CuSO is utilized the present invention relates to a kind of4The method that/HF system prepares the black silicon of monocrystalline of high minority carrier life time, in monocrystalline silicon
Nano-pore is prepared on piece " pyramid " suede structure, few sub- longevity of black silicon is improved while reducing silicon chip surface reflectivity
Life.
Background technique
With the development of solar-photovoltaic technology, the transfer efficiency of solar battery always is emphasis concerned by people,
And the discovery of black silicon material, the transfer efficiency for improving monocrystalline silica-based solar cell for people provide a kind of new method.And mesh
The preceding main method for preparing black silicon has: chemical corrosion method, reactive ion etching method, photoetching process, mechanical carving groove method etc..Above-mentioned
In several method, mechanical carving groove method is in the multiple blades of polysilicon surface while to carve " V " type groove and reduce optical reflection.Though
So have the advantages that simple process, cutting are fireballing, but mechanical carving groove depth is deep, it is desirable that silicon wafer is thicker, is not suitable for
The production of thin substrate solar battery.Meanwhile in etching process, silicon chip surface will cause damage, while can also introduce some miscellaneous
Matter.Reactive ion etching method is also known as plasma etching, is to generate plasma using low-pressure gas, is assisted using physical mechanism
Chemical etching generates a kind of dry corrosion process that reactive ion participates in chemical etching.The flannelette reflectivity that it is formed is special
Low, the reflectivity in 450-1000nm spectral region is smaller than 2%, but silicon face damage is serious, the open-circuit voltage of battery
Can all it decline with fill factor, in addition, having the shortcomings that yield is lower and at high cost.Chemical corrosion method generally uses alkali (NaOH
Or KOH) alcohol (isopropanol or ethyl alcohol) mixed solution as corrosion system.Wherein alkali is corrosive agent, is used for corrosion of silicon, and alcohol is
Defoaming agent, the bubble hydrogen for being generated except dereaction.
Caused by the anisotropic reactive for being formed as alkali and silicon of " pyramid ".In certain density aqueous slkali,
OH-Several times faster than (111) face even tens times of the reaction speed in (100) face of ion and silicon, corrosion reaction is opened from (100) face
Begin, finally exposes staggered (111) crystal face, form numerous four sides side's cone in silicon chip surface, be commonly called as " pyramid " structure.
This " pyramid " structure is mainly that the refraction twice of light inside it is utilized to increase the absorbed number of light,
To increase silicon wafer to the absorptivity of light, the reflectivity of reduction silicon chip surface.Therefore shape of this method by " pyramid "
Very greatly thus with very big room for improvement, it is secondary in the progress of " pyramid " surface that the invention proposes one kind for influence with density
The method that processing prepares nano-pore further to reduce the reflectivity of silicon chip surface.
Currently, the making herbs into wool report for monocrystalline silicon " pyramid " shape has very much, such method is also very perfect, but for
It is almost absent in the report that " pyramid " surface carries out secondary treatment.Meanwhile the silicon wafer after this secondary treatment is lower few
The sub- service life is also the major reason for restricting the material all the time and applying in area of solar cell.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of high black silicon of minority carrier life time.
For this purpose, the technical scheme is that a kind of preparation method of the black silicon of high minority carrier life time, it is characterised in that: including
Following steps:
1) Wafer Cleaning: being handled silicon chip surface using the RCA standard cleaning method in integrated circuit, removes silicon wafer
Organic matter, oxide and the mechanical damage on surface；
2) traditional handicraft making herbs into wool: making herbs into wool is carried out to monocrystalline silicon piece using traditional alkali alcohol system, is obtained good " pyramid "
The surface of structure；
3) it prepares nano-pore: CuSO is utilized to the silicon wafer after making herbs into wool4Secondary treatment is carried out with HF system, thus in " golden word
Tower " surface obtains nano-pore structure.
Preferably, the CuSO4Concentration be 0.05M, the concentration of HF is 1.15M.
Following step can also be increased:
4) KOH for the use of mass concentration being 0.03% modifies the surface topography of treated silicon wafer, improves silicon wafer
Minority carrier life time.
In the present invention, silicon wafer is cleaned first with standard RCA clean method, then utilizes traditional alkali
(KOH) alcohol (isopropanol) system carries out making herbs into wool processing to the silicon wafer after cleaning, utilizes CuSO later4After/HF system is to making herbs into wool
Silicon wafer carries out secondary treatment.Its principle are as follows: after the metal ion in solution is diffused into silicon chip surface, electronics quilt is absorbed from silicon wafer
It is reduced into metal simple-substance and is adsorbed on silicon chip surface, while the silicon under metal simple-substance is oxidized to SiO2, with reaction continuation into
It goes, will be corroded out nano-pore in " pyramid " micro-structure of silicon chip surface.Its total chemical equation is
And in the primary battery that silicon and metal are formed, cathode is metal, reduction reaction occurs here:
H2O2+2H+→2H2O+2h+
Silicon under metal as stated above can be oxidized and remove, therefore its reaction can be divided into two steps:
(1) Si is directly oxidized to Si4+And remove, it reacts as follows:
Si+4h++4HF→SiF4+4H+
SiF4+2HF→H2SiF6
Si+4HF2 -→SiF6 2-+2HF+H2+2e-
(2) Si is oxidized to SiO2It is as follows that its reaction is removed by HF again:
Si+2H2O→SiO2+4H++4e-
SiO2+6HF→H2SiF6+2H2O
And it reacts the metal simple-substance generated and HNO can be used3It removes.Its reaction equation is
Cu+4HNO3(dense) → Cu (NO3)2+2NO2↑+2H2O
Finally, because using the black silicon of metal ion auxiliary law preparation because tighter to the destruction of wafer topography
Weight, causes the minority carrier life time of silicon wafer very low, and therefore, we repair the surface topography of the silicon wafer after secondary treatment using weak base
Decorations, to improve the minority carrier life time of silicon wafer.
Detailed description of the invention
It is described in further detail below in conjunction with attached drawing and embodiments of the present invention
Fig. 1 is the SEM figure of " pyramid " sample that traditional process for etching obtains；
Fig. 2 is using CuSO4The SEM figure of/HF system treated silicon wafer；
Fig. 3 is the reflectance map of different phase silicon wafer after processing；S1 is RCA wash phase, S2 is the making herbs into wool stage, S3 is
CuSO4/ HF processing stage；
Fig. 4 be cleaning after, after making herbs into wool, CuSO4The minority carrier life time of silicon wafer becomes after/HF processing and after 0.03%KOH processing
Change figure；T1 be cleaning after, T2 be making herbs into wool after, T3 CuSO4After/HF processing, after T4 is 0.03%KOH processing；
Fig. 5 is the reflectance map of the silicon wafer of 0.03%KOH before and after the processing；S4 is making herbs into wool stage, S5 CuSO4/ HF processing
Stage, S6 are 0.03%KOH processing stage.
Specific embodiment
1.1 main raw material
P type single crystal silicon piece: 2 inches diameter.
Chemical reagent: acetone, dehydrated alcohol, KOH, isopropanol, HF, CuSO4, ammonium hydroxide, HCl, H2O2, deionized water.
1.2 main test equipments
Scanning electron microscope, ultraviolet-visible-near infrared spectrometer, minority carrier lifetime tester.
1.3 preparation process
(1) Wafer Cleaning
A) silicon wafer is put into clean beaker and proper amount of acetone ultrasound 10min is added and is rinsed with deionized water；
B) appropriate dehydrated alcohol ultrasound 10min is added into beaker and is rinsed with deionized water；
C) NH is added with the ratio of 1:1:5 into beaker4OH、H2O2、H2O at 80 DEG C heating water bath 10min and spend from
Sub- water rinses；
D) 5min is impregnated with 0.5% HF；
E) HCl, H is added in the ratio of 1:1:5 into beaker2O2、H2O heating water bath 10min and uses deionization at 80 DEG C
Water rinses；
F) with 1% hydrofluoric acid dips 90S；
G) N is used2It dries up spare.
(2) making herbs into wool is handled
Cleaned silicon wafer is put into beaker, 1.5% KOH, 10% isopropanol, the heating water bath at 80 DEG C is added
And be ultrasonically treated 30min, after rinsed with deionized water, N2It dries up spare.
(3) nano-pore is prepared
The good silicon wafer of making herbs into wool is put into 0.05M CuSO4, impregnate 3min at room temperature in 1.15M HF mixed solution, obtain two
The sample of secondary processing.
(4) weak base improves minority carrier life time
Silicon wafer after secondary treatment is put into 0.03% KOH solution, impregnates 40min at room temperature, obtains final sample.
1.4 results and analysis
Fig. 1 is the SEM figure using traditional alkali (KOH) alcohol (isopropanol) process for etching treated silicon wafer, as shown,
By the ultrasonic treatment of 30min at 80 DEG C, intensive and uniform " pyramid " micro- knot has successfully been prepared in silicon chip surface
Structure.
Fig. 2 is using CuSO4The SEM figure of/HF system treated silicon wafer, we are apparent it can be seen that in silicon from figure
There are many holes in piece surface " pyramid " micro-structure idol.
Fig. 3 is the 300-1100nm reflectance map of different phase silicon wafer after processing, we can be found that alkali (KOH) from figure
The reflectivity of silicon wafer after alcohol (isopropanol) system making herbs into wool has dropped very much.Silicon in the range of 300-1100nm, after making herbs into wool
The minimum reflectivity of piece has reached 13.8%, and uses CuSO4The reflectivity of/HF system treated silicon wafer has obtained more into one
The decline of step has reached 11.6%.
But because the surface topography of treated silicon wafer in this way receives great destruction, so that the minority carrier life time of silicon wafer
It is very low, therefore we improve the reflectivity of silicon wafer using weak base.As shown in figure 4, using 0.03% KOH treated silicon wafer
Minority carrier life time is greatly improved in the case where silicon chip surface reflectivity is held essentially constant, compared to raising before processing
More 23.5%.Fig. 5 is the reflectance map of the silicon wafer after 0.03% KOH immersion.
It should be appreciated that described herein, the specific embodiments are only for explaining the present invention, not to limit the present invention.
Claims (3)
1. a kind of preparation method of the black silicon of high minority carrier life time, it is characterised in that: the following steps are included:
1) Wafer Cleaning: being handled silicon chip surface using the RCA standard cleaning method in integrated circuit, removes silicon chip surface
Organic matter, oxide and mechanical damage；
2) traditional handicraft making herbs into wool: making herbs into wool is carried out to monocrystalline silicon piece using traditional alkali alcohol system, obtains good " pyramid " structure
Surface；
3) it prepares nano-pore: CuSO is utilized to the silicon wafer after making herbs into wool4Secondary treatment is carried out with HF system, thus in " pyramid " table
Face obtains nano-pore structure.
2. a kind of preparation method of the high black silicon of minority carrier life time as described in claim 1, it is characterised in that: the CuSO4It is dense
Degree is 0.05M, and the concentration of HF is 1.15M.
3. a kind of preparation method of the high black silicon of minority carrier life time as described in claim 1, it is characterised in that: can also increase following
Step:
4) KOH for the use of mass concentration being 0.03% modifies the surface topography of treated silicon wafer, improves lacking for silicon wafer
The sub- service life.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
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|---|---|---|---|---|
| US20120138139A1 (en) * | 2010-11-01 | 2012-06-07 | Intevac, Inc. | Dry etching method of surface texture formation on silicon wafer |
| CN104195645A (en) * | 2014-08-06 | 2014-12-10 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer |
| CN104992991A (en) * | 2015-05-27 | 2015-10-21 | 上饶光电高科技有限公司 | Method for preparing black silicon solar cell |
| CN107316917A (en) * | 2017-06-06 | 2017-11-03 | 浙江师范大学 | A kind of method for the monocrystalline silicon suede structure for preparing antiradar reflectivity |
-
2018
- 2018-06-25 CN CN201810660220.5A patent/CN109037396A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120138139A1 (en) * | 2010-11-01 | 2012-06-07 | Intevac, Inc. | Dry etching method of surface texture formation on silicon wafer |
| CN104195645A (en) * | 2014-08-06 | 2014-12-10 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer |
| CN104992991A (en) * | 2015-05-27 | 2015-10-21 | 上饶光电高科技有限公司 | Method for preparing black silicon solar cell |
| CN107316917A (en) * | 2017-06-06 | 2017-11-03 | 浙江师范大学 | A kind of method for the monocrystalline silicon suede structure for preparing antiradar reflectivity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
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Application publication date: 20181218 |