CN109037395A - A kind of diffusion technique improving sheet resistance uniformity - Google Patents
A kind of diffusion technique improving sheet resistance uniformity Download PDFInfo
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- CN109037395A CN109037395A CN201810658370.2A CN201810658370A CN109037395A CN 109037395 A CN109037395 A CN 109037395A CN 201810658370 A CN201810658370 A CN 201810658370A CN 109037395 A CN109037395 A CN 109037395A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000001301 oxygen Substances 0.000 claims abstract description 87
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 87
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 50
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 235000008216 herbs Nutrition 0.000 claims abstract description 4
- 238000003780 insertion Methods 0.000 claims abstract description 4
- 230000037431 insertion Effects 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 claims abstract description 4
- 238000010792 warming Methods 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses it is a kind of improve sheet resistance uniformity diffusion technique, comprising the following steps: (1) heat up: by after making herbs into wool silicon wafer insertion quartz boat in, upper boat, into boat after boiler tube be warming up to 750 DEG C~795 DEG C；(2) dry-oxygen oxidation: being passed through dry oxygen and aoxidized, dry 1800~2200ml/min of oxygen flow, oxidization time 100ecs；(3) wet-oxygen oxidation: being passed through wet oxygen and aoxidized, wet oxygen 1400~1600ml/min of flow, oxidization time 200sec；(4) it spreads: being passed through dry oxygen, small nitrogen and big nitrogen and carry out heavy knot diffusion, dry 600~900ml/min of oxygen flow, 1200~1500ml/min of small nitrogen flow, big nitrogen flow is 10000ml/min~15000ml/min, 1200sec is diffused at 750 DEG C~795 DEG C of temperature, the present invention provides a kind of diffusion technique for the raising sheet resistance uniformity that diffusion technique is high-quality, uniformity is high and the sheet resistance uniformity of the silicon chip edge of diffusion and surrounding is good.
Description
Technical field
The present invention and crystal silicon battery manufacture of solar cells technical field more particularly to a kind of expansion for improving sheet resistance uniformity
Day labor skill.
Background technique
It in terms of crystal silicon cell industrialization, generallys use high-temperature diffusion method and prepares PN junction, and industrialization is prepared between piece, piece
The good high square resistance emitter of interior uniformity is the important channel for improving battery conversion efficiency and electric performance stablity, not only can be from whole
Diffusion technique is improved on body and optimizes space, and can reduce battery efficiency stepping quantity, and according to the prior art, industry produces to improve
Can, silicon wafer spacing is constantly reduced.Silicon wafer neighbor distance is small, and foreign atom intrinsic standoff ratio is small, cause doping concentration among silicon wafer with
The gap at edge is larger, and diffusion technique is of poor quality, and uniformity is lower, and in the producing line of high square resistance production, since sheet resistance is higher,
Non-uniform phenomenon increases, and the sheet resistance of the silicon chip edge and surrounding that lead to diffusion is more uneven.
Summary of the invention
The technical problems to be solved by the present invention are: overcoming the defect of the above prior art, a kind of diffusion technique matter is provided
It measures, the diffusion technique for the raising sheet resistance uniformity that uniformity is high and the sheet resistance uniformity of the silicon chip edge of diffusion and surrounding is good.
The technical solution used in the present invention is: a kind of diffusion technique for improving sheet resistance uniformity, comprising the following steps:
(1) heat up: by after making herbs into wool silicon wafer insertion quartz boat in, upper boat, into boat after boiler tube be warming up to 750 DEG C~795 DEG C；
(2) dry-oxygen oxidation: being passed through dry oxygen and aoxidized, dry 1800~2200ml/min of oxygen flow, oxidization time 100ecs；
(3) wet-oxygen oxidation: being passed through wet oxygen and aoxidized, wet oxygen 1400~1600ml/min of flow, oxidization time 200sec；
(4) it spreads: being passed through dry oxygen, small nitrogen and big nitrogen and carry out heavy knot diffusion, dry 600~900ml/min of oxygen flow, small nitrogen stream
Measure 1200~1500ml/min, big nitrogen flow be 10000ml/min~15000ml/min, at 750 DEG C~795 DEG C of temperature into
Row diffusion 1200sec；
(5) heating promotes, and furnace tube temperature is risen to 800 DEG C~830 DEG C, the propulsion time is 500sec~700sec；
(6) dry-oxygen oxidation: being passed through dry oxygen and aoxidized again, dry 1200~1600ml/min of oxygen flow, big nitrogen flow
20000~25000ml/min aoxidizes 200sec at 820 DEG C~840 DEG C of temperature；
(7) wet-oxygen oxidation: being passed through wet oxygen and aoxidized again, 1200~1600ml/min of wet oxygen flow, big nitrogen flow
20000~25000ml/min aoxidizes 550sec at 820 DEG C~840 DEG C of temperature.
Above-mentioned small nitrogen is to take source nitrogen, and big nitrogen is nitrogen, and dry oxygen is dry oxygen, and wet oxygen is the oxygen with steam
Gas.
After using the above structure, compared with the prior art, the present invention has the following advantages: present invention improves solar-electricities
Diffusion technique in the manufacture of pond, single tube process time shorten 3000s, and average unevenness has dropped 4%, to the depth of PN junction
There is good control with surface concentration, average photoelectric conversion efficiency improves 0.15%.It can be seen that when the present invention is for improving unit
Between yield, diffusion uniformity and photoelectric conversion efficiency all have very great help.
Preferably, step (2) technological parameter are as follows: dry 1900~2100ml/min of oxygen flow, oxidization time
100sec, grows the SiO2 of one layer of nanometer grade thickness, and dry oxygen flow is preferably 1950,2000 and 2050ml/min.
Preferably, step (3) technological parameter are as follows: wet oxygen 1450~1550ml/min of flow, oxidization time
200sec, the SiO2 of one layer of nanometer grade thickness of regrowth, wet oxygen flow are preferably 1450,1500 and 1550ml/min.
Preferably, the technological parameter of the step (4) are as follows: be passed through dry 700~800ml/min of oxygen flow, small nitrogen flow
1300~1400ml/min, big nitrogen flow are 11000ml/min~14000ml/min, are carried out at 770 DEG C~793 DEG C of temperature
1200sec is spread, dry oxygen flow is preferably 700,750 and 800ml/min, and small nitrogen flow is preferably 1300,1350 and
1400ml/min, big nitrogen flow are preferably 12000,13000 and 13500ml/min, and temperature is preferably 770,780 and 790 DEG C.
Preferably, step (6) technological parameter are as follows: be passed through dry 1300~1500ml/min of oxygen flow, big nitrogen flow
21000~24000ml/min, aoxidizes 200sec at 825 DEG C~835 DEG C of temperature, and dry oxygen flow is preferably 1300,1400 and
1500ml/min, big nitrogen flow are preferably 21000,22000 and 23000ml/min, and temperature is preferably 825,830 and 835 DEG C.
Preferably, step (7) technological parameter are as follows: 1300~1500ml/min of wet oxygen flow, big nitrogen flow 21000
~24000ml/min, aoxidizes 550sec at 825 DEG C~835 DEG C of temperature, and wet oxygen flow is preferably 1300,1400 and 1500
Ml/min, big nitrogen flow are preferably 21000,22000 and 23000ml/min, and temperature is preferably 825,830 and 835 DEG C.
Preferably, the piece spacing of the silicon wafer be 1.0~2.0mm, after diffusion gained silicon wafer sheet resistance value be 85~
130 Ω/, for sheet resistance unevenness less than 3%, diffuser fire door and furnace tail warm area temperature gap are small between the piece of silicon wafer after diffusion
In or be equal to 10 DEG C, the piece spacing of silicon wafer is preferably 1.0,1.5 and 2.0mm, and the sheet resistance value of silicon wafer is preferably 90,100 and 110
Ω/□。
Preferably, the silicon wafer is p-type polysilicon piece, the resistivity of the p-type polysilicon piece be 1 Ω cm~
3 Ω cm, with a thickness of 100 μm~200 μm, the resistivity of p-type polysilicon piece is preferably 1,2 and 3 Ω cm, and thickness is preferably
100,150 and 200 μm.
Specific embodiment
The invention will be further described With reference to embodiment.
A kind of diffusion technique improving sheet resistance uniformity, comprising the following steps:
(1) heat up: by after making herbs into wool silicon wafer insertion quartz boat in, upper boat, into boat after boiler tube be warming up to 750 DEG C~795 DEG C,
Temperature is preferably 770,780 and 790 DEG C；
(2) dry-oxygen oxidation: being passed through dry oxygen and aoxidized, dry 1800~2200ml/min of oxygen flow, oxidization time 100ecs；
(3) wet-oxygen oxidation: being passed through wet oxygen and aoxidized, wet oxygen 1400~1600ml/min of flow, oxidization time 200sec；
(4) it spreads: being passed through dry oxygen, small nitrogen and big nitrogen and carry out heavy knot diffusion, dry 600~900ml/min of oxygen flow, small nitrogen stream
Measure 1200~1500ml/min, big nitrogen flow be 10000ml/min~15000ml/min, at 750 DEG C~795 DEG C of temperature into
Row diffusion 1200sec.
(5) heating promotes, and furnace tube temperature is risen to 800 DEG C~830 DEG C, the propulsion time is 500sec~700sec；
(6) dry-oxygen oxidation: being passed through dry oxygen and aoxidized again, dry 1200~1600ml/min of oxygen flow, big nitrogen flow
20000~25000ml/min aoxidizes 200sec at 820 DEG C~840 DEG C of temperature；
(7) wet-oxygen oxidation: being passed through wet oxygen and aoxidized again, 1200~1600ml/min of wet oxygen flow, big nitrogen flow
20000~25000ml/min aoxidizes 550sec at 820 DEG C~840 DEG C of temperature.
Above-mentioned small nitrogen is to take source nitrogen, and big nitrogen is nitrogen, and dry oxygen is dry oxygen, and wet oxygen is the oxygen with steam
Gas.
After using the above structure, compared with the prior art, the present invention has the following advantages: present invention improves solar-electricities
Diffusion technique in the manufacture of pond, single tube process time shorten 3000s, and average unevenness has dropped 4%, to the depth of PN junction
There is good control with surface concentration, average photoelectric conversion efficiency improves 0.15%.It can be seen that when the present invention is for improving unit
Between yield, diffusion uniformity and photoelectric conversion efficiency all have very great help.
Step (2) technological parameter are as follows: dry 1900~2100ml/min of oxygen flow, oxidization time 100sec, growth one
The SiO2 of layer nanometer grade thickness, dry oxygen flow is preferably 1950,2000 and 2050ml/min.
Step (3) technological parameter are as follows: wet oxygen 1450~1550ml/min of flow, oxidization time 200sec, regrowth
The SiO2 of one layer of nanometer grade thickness, wet oxygen flow are preferably 1450,1500 and 1550ml/min.
The technological parameter of the step (4) are as follows: be passed through dry 700~800ml/min of oxygen flow, small nitrogen flow 1300~1400
Ml/min, big nitrogen flow are 11000ml/min~14000ml/min, are diffused at 770 DEG C~793 DEG C of temperature
1200sec, dry oxygen flow are preferably 700,750 and 800ml/min, and small nitrogen flow is preferably 1300,1350 and 1400ml/min,
Big nitrogen flow is preferably 12000,13000 and 13500ml/min, and temperature is preferably 770,780 and 790 DEG C.
Step (6) technological parameter are as follows: it is passed through dry 1300~1500ml/min of oxygen flow, big nitrogen flow 21000~
24000 ml/min, aoxidize 200sec at 825 DEG C~835 DEG C of temperature, and dry oxygen flow is preferably 1300,1400 and 1500ml/
Min, big nitrogen flow are preferably 21000,22000 and 23000ml/min, and temperature is preferably 825,830 and 835 DEG C.
Step (7) technological parameter are as follows: 1300~1500ml/min of wet oxygen flow, big nitrogen flow 21000~24000
Ml/min aoxidizes 550sec at 825 DEG C~835 DEG C of temperature, and wet oxygen flow is preferably 1300,1400 and 1500ml/min, greatly
Nitrogen flow is preferably 21000,22000 and 23000ml/min, and temperature is preferably 825,830 and 835 DEG C.
The piece spacing of the silicon wafer is 1.0~2.0mm, and the sheet resistance value of gained silicon wafer is 85~130 Ω/ after diffusion,
For sheet resistance unevenness less than 3%, diffuser fire door and furnace tail warm area temperature gap are less than or equal to 10 between the piece of silicon wafer after diffusion
DEG C, the piece spacing of silicon wafer is preferably 1.0,1.5 and 2.0mm, and the sheet resistance value of silicon wafer is preferably 90,100 and 110 Ω/.
The silicon wafer is p-type polysilicon piece, and the resistivity of the p-type polysilicon piece is the 1 Ω cm of Ω cm~3,
With a thickness of 100 μm~200 μm, the resistivity of p-type polysilicon piece is preferably 1,2 and 3 Ω cm, and thickness is preferably 100,150 and
200μm
It is that technical scheme of the present invention will be further described below, it is exactly brilliant for improving the diffusion technique of sheet resistance uniformity
The diffusion technique of the diffusion technique of body silicon solar cell, crystal silicon solar energy battery of the invention is keeping other original techniques
On the basis of constant, diffusion furnace selects the tubular diffusion furnace of prompt good big wound, and the technological parameter format that we edit is also according to this
The format of diffusion furnace.
Dry-oxygen oxidation growth rate is slow in preceding oxidation and rear oxidation, and sheet resistance uniformity is poor, but dry-oxygen oxidation compact structure
Property it is good, strong to impurity screening ability, growth is uniform；The present invention had both remained dry oxygen oxygen in wet-oxygen oxidation using first dry-oxygen oxidation
The advantages of change, and oxidization time is shortened, sheet resistance uniformity is improved, and junction depth is shallow, surface concentration is low.
The overall process time of traditional handicraft is 5850sec, and the present invention process time is 5450sec, saves time 400s, greatly
Production capacity is improved greatly.
Following table is the sheet resistance comparison of traditional handicraft and present invention process:
Unevenness calculation method: unevenness=(maximum value-minimum value)/(maximum value+minimum value) × 100%), by
For data as it can be seen that present invention process can improve sheet resistance uniformity, reduction sheet resistance is very poor.
Following table is the unit for electrical property parameters comparison of traditional handicraft and present invention process:
| Uoc | Isc | FF | Ncell | |
| Traditional handicraft | 0.6301 | 9.1148 | 80.19 | 18.745% |
| Invented technology | 0.6332 | 9.1235 | 80.22 | 18.861% |
By data as it can be seen that the electrical property of present invention process is improved, photoelectric conversion efficiency is improved.
Preferred embodiments of the present invention are described above, but are not to be construed as limiting the scope of the invention.This hair
Bright to be not only limited to above embodiments, specific structure is allowed to vary, all institutes in the protection scope of demand for independence of the present invention
The various change of work is within the scope of the invention.
Claims (8)
1. a kind of diffusion technique for improving sheet resistance uniformity, comprising the following steps:
(1) heat up: by after making herbs into wool silicon wafer insertion quartz boat in, upper boat, into boat after boiler tube be warming up to 750 DEG C~795 DEG C；
(2) dry-oxygen oxidation: being passed through dry oxygen and aoxidized, dry 1800~2200ml/min of oxygen flow, oxidization time 100ecs；
(3) wet-oxygen oxidation: being passed through wet oxygen and aoxidized, wet oxygen 1400~1600ml/min of flow, oxidization time 200sec；
(4) it spreads: being passed through dry oxygen, small nitrogen and big nitrogen and carry out heavy knot diffusion, dry 600~900ml/min of oxygen flow, small nitrogen flow
1200~1500ml/min, big nitrogen flow are 10000ml/min~15000ml/min, are carried out at 750 DEG C~795 DEG C of temperature
Spread 1200sec；
(5) heating promotes, and furnace tube temperature is risen to 800 DEG C~830 DEG C, the propulsion time is 500sec~700sec；
(6) dry-oxygen oxidation: being passed through dry oxygen and aoxidized again, dry 1200~1600ml/min of oxygen flow, and big nitrogen flow 20000~
25000ml/min aoxidizes 200sec at 820 DEG C~840 DEG C of temperature；
(7) wet-oxygen oxidation: being passed through wet oxygen and aoxidized again, wet oxygen flow 1200~1600ml/min, and big nitrogen flow 20000~
25000ml/min aoxidizes 550sec at 820 DEG C~840 DEG C of temperature.
2. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the step (2)
Technological parameter are as follows: dry 1900~2100ml/min of oxygen flow, oxidization time 100sec grow the SiO2 of one layer of nanometer grade thickness.
3. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the step (3)
Technological parameter are as follows: wet oxygen 1450~1550ml/min of flow, oxidization time 200sec, one layer of nanometer grade thickness of regrowth
SiO2。
4. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the step (4)
Technological parameter are as follows: be passed through dry 700~800ml/min of oxygen flow, 1300~1400ml/min of small nitrogen flow, big nitrogen flow is
11000ml/min~14000ml/min is diffused 1200sec at 770 DEG C~793 DEG C of temperature.
5. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the step (6)
Technological parameter are as follows: be passed through dry 1300~1500ml/min of oxygen flow, 21000~24000ml/min of big nitrogen flow, in temperature 825
DEG C~835 DEG C at aoxidize 200sec.
6. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the step (7)
Technological parameter are as follows: 1300~1500ml/min of wet oxygen flow, 21000~24000ml/min of big nitrogen flow, 825 DEG C of temperature~
550sec is aoxidized at 835 DEG C.
7. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the silicon wafer
Piece spacing is 1.0~2.0mm, and the sheet resistance value of gained silicon wafer is 85~130 Ω/, sheet resistance between the piece of silicon wafer after diffusion after diffusion
For unevenness less than 3%, diffuser fire door and furnace tail warm area temperature gap are less than or equal to 10 DEG C.
8. a kind of diffusion technique for improving sheet resistance uniformity according to claim 1, it is characterised in that: the silicon wafer is
The resistivity of p-type polysilicon piece, the p-type polysilicon piece is the 1 Ω cm of Ω cm~3, with a thickness of 100 μm~200 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413844B1 (en) * | 2001-01-10 | 2002-07-02 | Asm International N.V. | Safe arsenic gas phase doping |
| CN105070787A (en) * | 2015-08-18 | 2015-11-18 | 东莞南玻光伏科技有限公司 | Crystalline silicon solar cell and diffusion method therefor |
| CN105374900A (en) * | 2015-10-14 | 2016-03-02 | 横店集团东磁股份有限公司 | Method for preparing monocrystalline silicon surface-passivated cell |
| CN106449868A (en) * | 2016-08-31 | 2017-02-22 | 东方日升新能源股份有限公司 | Diffusion method of solar cell silicon chip |
-
2018
- 2018-06-25 CN CN201810658370.2A patent/CN109037395B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413844B1 (en) * | 2001-01-10 | 2002-07-02 | Asm International N.V. | Safe arsenic gas phase doping |
| CN105070787A (en) * | 2015-08-18 | 2015-11-18 | 东莞南玻光伏科技有限公司 | Crystalline silicon solar cell and diffusion method therefor |
| CN105374900A (en) * | 2015-10-14 | 2016-03-02 | 横店集团东磁股份有限公司 | Method for preparing monocrystalline silicon surface-passivated cell |
| CN106449868A (en) * | 2016-08-31 | 2017-02-22 | 东方日升新能源股份有限公司 | Diffusion method of solar cell silicon chip |
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