CN109031892A - Litho machine matching process - Google Patents

Litho machine matching process Download PDF

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Publication number
CN109031892A
CN109031892A CN201810811341.5A CN201810811341A CN109031892A CN 109031892 A CN109031892 A CN 109031892A CN 201810811341 A CN201810811341 A CN 201810811341A CN 109031892 A CN109031892 A CN 109031892A
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litho machine
chromosome
matched
machine
light source
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CN109031892B (en
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茅言杰
李思坤
王向朝
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus

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  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A kind of litho machine matching process, this method is using aerial image critical size as the parameter of description litho machine imaging performance, by the lighting source for the litho machine that genetic algorithm optimization pixelation describes, matches in high precision between realization photoetching.The present invention takes full advantage of the high advantage of free lighting system light source freedom degree, improves the matching precision of existing method, suitable for the matching between immersed photoetching machine or dry lithography machine with free lighting system.

Description

Litho machine matching process
Technical field
It is especially a kind of for the litho machine matching process with free lighting system the present invention relates to litho machine.
Background technique
Photoetching process is the core process of IC chip manufacture.To reduce economy and time cost, photoetching process Research and development are usually completed on a specific litho machine.More for photoetching process need to being transferred to when chip volume production in producing line On litho machine.There are larger differences for the lithography performance of different model litho machine, even if the litho machine of same model is due to its hardware The fine difference of index, it is also possible to which there are larger differences for the lithography performance that will lead to including image quality.Photoetching in producing line Machine, litho machine referred to as to be matched, and technique research and development litho machine referred to as refer to litho machine, between performance difference, will lead to photoetching Process transfer failure.To realize photoetching process fast transfer, enhancing production capacities and improving chip manufacturing yield, it is necessary to carry out photoetching Machine matching, the imaging performance that litho machine to be matched is made by adjusting litho machine adjustable parameter and the imaging performance with reference to litho machine It is as consistent as possible.
Common litho machine matching technique have based on critical size (CD) measurement matching technique, based on photoresist model Matching technique, and the matching technique based on optical model.First two technology needs to use the CD data on silicon wafer to characterize two Imaging performance difference between a litho machine, and the sensitivity information for being used for matched adjustable parameter is calculated, realize litho machine Match.To guarantee that it is (such as a variety of light illumination modes, a variety of mask graphs, multiple figure periods, more in a variety of conditions that matching precision is needed A exposure dose, multiple defocus positions) under CD is repeatedly measured respectively, when expending a large amount of litho machine machine and measurement Time.Matching technique (first technology 1, Yuan He, Erik Byers, and Scott Light et based on optical model al,Simulation-based pattern matching using scanner metrology and design data To reduce reliance on CD metrology, Proc.SPIE.7640,764014 (2010)) utilize litho machine optics Model carries out adjustable parameter Calculation of Sensitivity, does not need to carry out time-consuming CD measurement, avoids measurement noise and photoresist model Influence of the calibrated error to matching precision, it is accurate and quick, when litho machine is to cause the unmatched major influence factors of figure When matching precision with higher, be common technology in high-end chip production.Adjustable parameter includes light source, projection objective numerical value Aperture and projection objective wave aberration etc..Wherein light source freedom degree is higher, is the major parameter being adjusted in litho machine matching.It is existing There is technology to use Newton method or least square method that light source is optimized to realize matching (the first technology 2, Yuan of litho machine He,Alexander Serebryakov and Scott Light et al,A Study on the Automation of Scanner Matching,Proc.SPIE.7973,79731H(2013)；First technology 3, litho machine matching process, ), CN108170006A but only for traditional lightings modes such as conventional lighting, ring illumination, two pole illuminations, quadrupole illuminatings joined Number adjustment carries out intensity or distributed modulation on existing free light illumination mode, and optimization freedom degree is very limited.
Summary of the invention
The present invention is directed to the litho machine with free lighting system and provides a kind of litho machine Performance Match method.This method will The light source of pixelation is encoded to chromosome, constantly updates light source information by genetic algorithm, reduces litho machine to be matched and reference The difference of lithography performance between litho machine.It is free to take full advantage of free lighting system light source without meter sensitivity for this method High advantage is spent, the matched precision of litho machine is improved.
Technical solution of the invention is as follows:
A kind of litho machine matching process based on genetic algorithm, this method comprises the following steps:
1) litho machine and puddle development machine check:
The state of reference litho machine and litho machine to be matched is checked: including the cold aberration of projection objective, illumination it is ellipse Circularity, illumination partial coherence factor, laser light source stable, stray light level, illumination uniformity, mask platform work stage is synchronous The litho machines characteristic information such as error.The parameter reviewed and validate with reference to litho machine and litho machine to be matched is correctly set, if any Parameter and parameter as defined in specification are inconsistent, are adjusted in time to these parameters, so that with reference to litho machine and light to be matched Quarter, machine was working properly, and was in optimum Working.Check working condition, the working condition of CD detection system of coating developing machine And photoresist batch, work normally coating developing machine, and be in optimum Working, photoresist batch is identical for confirmation, CD Detection system working condition is normal.
2) exposure verifying:
Using one-dimensional through-pitch pattern mask or the volume production that filters out in advance of part use X-Y scheme mask as Mask is tested, test mask amounts to M.It will adjust with reference to litho machine and litho machine adjustable parameter to be matched to identical value, it is adjustable Parameter includes light source form, numerical aperture of projection objective, projection objective wave aberration.Successively with reference to litho machine and litho machine to be matched Load test mask is exposed and develops, and measures the CD of photoetching offset plate figure on silicon wafer respectively using CD detection system, if two The mean square deviation for the difference between photoetching offset plate figure CD that platform photo-etching machine exposal generates is greater than target value CDRMSOr the difference between CD Different maximum value is greater than target value CDMAX, then need to match litho machine；
3) litho machine matches:
The status file (SFF) for referring to litho machine is read, the numerical value of the projection objective of litho machine is contained in status file Aperture, lighting system partial coherence factor, the lighting system pupil distribution of actual measurement, exposure dose, defocusing amount, actual measurement projection object The litho machines characteristic informations such as mirror image is poor, work stage obliquity factor, the mechanical oscillation level of litho machine optical system, laser bandwidth. Lithography simulation software is set according to reference litho machine status file, calculates threshold value TrUnder test mask aerial image CD Value, is denoted asLitho machine status file file to be matched is read, it is imitative to set photoetching according to litho machine status file to be matched True software sets population scale N, mutation probability Vmutation_rate, crossover probability Vcorss_ratio, aerial image CD threshold value Tr, it is maximum The number of iterations GmaxWith fitness threshold value Fs；
Target light source to litho machine to be matched is calculated using genetic algorithm, light source coding result is known as dyeing in calculating Body, first initialization first generation chromosomeGained light source figure J will be measured with reference to litho machineRef(size For Ns×Ns) as an initial chromosome, other chromosomes generate at random for chromosome after coding；Coding mode is real number volume Yard, the light source chromosome after coding are as follows:
X=[g1,g2,…,gs], (1)
Wherein, gi∈ [0,1] is the intensity value of i-th of light source point, and light emitting region brightness value is 1, not light emitting region brightness Value is the quantity summation that 0, S is discrete light source point pixel, iterates to calculate the target light source shape of litho machine to be matched, iteration is specific Step are as follows:
1. to kth (k=1,2 ..., Gmax) generation chromosomeDecoding calculates corresponding light respectively Source figureAccording to light source figureThreshold is calculated using the lithography simulation software by litho machine status file to be matched setting Value TrUnder aerial image CD value, be denoted asAnd count chromosomeCorresponding calculation fitness function Fj ,k, calculation formula is as follows:
2. calculating kth for the smallest individual X of fitness in chromosomebest, fitness is denoted asIfOr K > Gmax, enter step 5., otherwise enter step 3.；
3. according to crossover probability Vmutation_rateNeed to carry out the dyeing of crossover operation for selection P in chromosome in kth Body, crossover operation include the following steps: to select chromosome using selection operator, and the chromosome selected is denoted as Selection operator is roulette operator or championship operator.In roulette operator, what individual was selected Probability is directly proportional to its fitness size；In championship operator, several body is disposably randomly selected in totality, then at this Two optimal individuals of fitness are chosen in a few bodies；Crossover operation is carried out to each pair of chromosome using crossover operator, intersects and calculates Son is
Xchild=Xparent1+Vrand·VRatio·(Xparent2-Xparent1), (3)
Wherein, VrandIt is random number, VRatioIt is cross parameter；Or
Xchild=Xparent2+R·(Xparent1-Xparent2), (4)
Wherein, R is cross parameter, Xparent1For the lesser individual of fitness function, the chromosome that is generated after crossover operation It is denoted asThe P chromosome generated with crossover operationSubstitute the P chromosome chosen；
4. according to aberration rate Vmutation_rateTo kth for the chromosome of populationCarry out mutation operation； To j-th of chromosomeVariation method are as follows: according to aberration rate Vmutation_rate?Middle selection randomly selects Q change point gi(i=1,2 ..., Q) replaces initial value with random number；Chromosome after completing mutation operation is denoted as k+1 for chromosome, returns to step Suddenly 1.；
5. iteration is terminated, by XbestDecoded light source form JbestTarget light source shape as litho machine to be matched is defeated Out；
4) exposure verifying:
According to the lighting system target light source shape J of the litho machine to be matched solvedbestGenerate need adjust to Parameter submenu with litho machine, i.e., the nominal parameter of litho machine light source setting to be matched；The parameter submenu is inputted Litho machine to be matched is adjusted adjustable parameter；Litho machine load test mask to be matched is exposed and develops；Use CD Detection system measures the CD of photoetching offset plate figure on silicon wafer；If the difference between the photoetching offset plate figure CD that two photo-etching machine exposals generate Different mean square deviation is less than target value CDRMSOr the maximum value of the difference between CD is less than target value CDMAX, then litho machine has matched At, otherwise it fails to match, need to re-start Optical proximity correction (OPC) or source mask optimization (SMO) to mask into Row redesigns.
Compared with first technology, the invention has the following advantages that
1. light source of the present invention is described by pixel, there is higher optimization freedom degree, matching precision is high.
It is not necessarily to 2. the present invention carries out litho machine Performance Match using genetic algorithm compared to Newton method and least square method Calculate gradient or sensitivity, to lithography simulation model with match fitness function wide adaptability.
Detailed description of the invention
Fig. 1 is the flow chart that litho machine Performance Match method is carried out using the present invention.
Fig. 2 is used by the embodiment of the present invention with reference to litho machine lighting source.
Fig. 3 is test mask used by the embodiment of the present invention and matching mask graph.
Fig. 4 is the lighting source of the litho machine to be matched after matching of the embodiment of the present invention
Fig. 5 is the line empty graphic of matching RELATED APPLICATIONS litho machine and litho machine different cycles to be matched of the embodiment of the present invention CD error.
Specific embodiment
Below with reference to embodiment and attached drawing, the invention will be further described, but should not be limited with this embodiment of the invention Protection scope.
The present embodiment with reference to litho machine lighting source intensity distribution as shown in Fig. 2, white area brightness value be 1, black Zone luminance value is 0, and light source grid is 31 × 31, the efficient light sources points S=709 within the scope of pupil.The test mask of use It is one-dimensional through-pitch line empty graphic mask shown in Fig. 3 with matching mask, mask graph line width is 45nm, and type is Binary mask, white area transmissivity value are 1, and black region transmissivity value is 0.The period of mask graph is 120nm, 140nm, 160nm ..., 1000nm totally 45, i.e. M=45, the horizontal line section marked in figure is the section position for calculating aerial image CD It sets.It is immersion with reference to litho machine and litho machine to be matched, litho machine operation wavelength is 193nm.Projection lens of lithography machine Numerical aperture is set as 1.35, and immersion liquid refractive index is 1.44, scales multiplying power R=0.25.The matching step of litho machine is as follows:
1) litho machine and puddle development machine check:
Check the state of reference litho machine and litho machine to be matched: the part of inspection includes the cold picture of projection objective Difference, illumination ovality, illumination partial coherence factor, laser light source stable, stray light level, illumination uniformity, mask Platform work stage synchronous error etc..The parameter reviewed and validate with reference to litho machine and litho machine to be matched is correctly set, if any ginseng Number is inconsistent with parameter as defined in specification, is adjusted in time to these parameters, so that with reference to litho machine and photoetching to be matched Machine is working properly, and is in optimum Working；Check the workflow of coating developing machine, the working condition of CD detection system with And photoresist batch, work normally coating developing machine, and be in optimum Working, photoresist batch is identical, CD detection system Working condition of uniting is normal.
2) exposure verifying:
It will adjust with reference to litho machine and litho machine adjustable parameter to be matched to identical value, load test mask is exposed respectively Light simultaneously develops, using the CD of photoetching offset plate figure on CD detection system measurement silicon wafer, the photoetching that two photo-etching machine exposals generate Difference between glue pattern CD is as shown in figure 5, mean square deviation is 2.028nm, with CDRMSFor the standard of=1nm, exceed technique The range of permission then needs to match current litho machine to be matched, into next step；
3) litho machine matches:
Read refer to litho machine status file (SFF), according to reference litho machine status file to lithography simulation software into Row setting, calculates threshold value TrUnder test mask aerial image CD value, be denoted asWherein i=1,2 ..., M are read to be matched Litho machine status file file, according to litho machine status file file configuration lithography simulation software to be matched.Set population scale N =100, mutation probability Vmutation_rate=0.02, crossover probability Vcorss_ratio=0.6, aerial image CD threshold value Tr=0.25, most Big the number of iterations Gmax=5000, fitness threshold value Fs=0.1nm；
Initialize first generation chromosomeGained light source figure J will be measured with reference to litho machineRefIt is (big Small is Ns×Ns) chromosome after coding as item chromosome, other chromosomes according to using being uniformly distributed random generation, Coding mode is real coding, and the light source chromosome after coding is
X=[g1,g2,…,gs], (1)
Wherein, gi∈ [0,1] is the intensity value of i-th of light source point, and S is the quantity summation of discrete light source point pixel, iteration Calculate the target light source shape of litho machine to be matched, iteration specific steps are as follows:
1. to kth (k=1,2 ..., Gmax) generation chromosomeDecoding calculates corresponding light source respectively FigureAccording to light source figureThreshold value T is calculated using the lithography simulation software by litho machine status file to be matched settingr Under aerial image CD value, be denoted asAnd count chromosomeCorresponding calculation fitness function Fj,k, meter It is as follows to calculate formula:
2. calculating kth for the smallest individual X of fitness in chromosomebest, fitness is denoted asIfOr K > Gmax, enter step 5., otherwise enter step 3.；
3. according to Vmutation_rateCrossover probability needs to carry out the dyeing of crossover operation for selection P in chromosome in kth Body, crossover operation include the following steps: that group scale is used to select chromosome for 4 algorithm of tournament selection operator, select Chromosome is denoted as Crossover operation is carried out to each pair of chromosome using crossover operator, is intersected Operator is
Xchild=Xparent1+Vrand·VRatio·(Xparent2-Xparent1), (3)
Wherein, VrandIt is the random number in [0,1], VRatio=1.2 be cross parameter, the chromosome generated after crossover operation It is denoted asThe P chromosome generated with crossover operationSubstitute the P chromosome chosen；
4. according to aberration rate Vmutation_rateTo kth for the chromosome of populationCarry out mutation operation； To j-th of chromosomeVariation method are as follows: according to aberration rate Vmutation_rate?Middle selection randomly selects Q change point gi(i=1,2 ... Q) generate random number replacement initial value using being uniformly distributed；Chromosome after completing mutation operation is denoted as k+1 generation Chromosome, return step is 1.
5. iteration is terminated, by XbestDecoded light source form JbestTarget light source shape as litho machine to be matched is defeated Out；
Lighting source shape after matching as shown in figure 4, the resulting CD error of lithography simulation software emulation as shown in Figure 5, CD error after matching meets the index of 1nm no more than 0.5nm, mean square deviation 0.171nm,.
4) exposure verifying:
The parameter submenu that litho machine to be matched is finally generated according to the lighting system light source form after matching, will be described Parameter submenu inputs litho machine to be matched and is adjusted to adjustable parameter.Litho machine to be matched carries out test mask after adjustment Exposure measures the CD of photoetching offset plate figure on silicon wafer；If surveying CD and with reference to the difference between litho machine CD still less than CDRMS, then Litho machine matching is completed, and otherwise re-starts Optical proximity correction (OPC) or source mask optimization (SMO) carries out mask It redesigns.
The above is a specific embodiment of the invention, which is merely illustrative of the technical solution of the present invention Rather than limitation of the present invention.All those skilled in the art pass through logic analysis, reasoning or limited under this invention's idea Available technical solution is tested, it all should be within protection scope of the present invention.

Claims (1)

1. a kind of litho machine matching process, it is characterised in that this method comprises the following steps:
1) litho machine and puddle development machine check:
The state of reference litho machine and litho machine to be matched is checked: including the cold aberration of projection objective, illumination ovality, The partial coherence factor of illumination, laser light source stable, stray light level, illumination uniformity, mask platform work stage synchronous error Equal litho machines characteristic information；The parameter reviewed and validate with reference to litho machine and litho machine to be matched is correctly set, if any parameter It is inconsistent with parameter as defined in specification, these parameters are adjusted in time, so that with reference to litho machine and litho machine to be matched It is working properly, and it is in optimum Working；Check the working condition of coating developing machine, the working condition of CD detection system and Photoresist batch, works normally coating developing machine, and is in optimum Working, and confirmation photoresist batch is identical, CD is detected Working state of system is normal；
2) exposure verifying:
It is covered using the volume production X-Y scheme mask that one-dimensional through-pitch pattern mask or part filter out in advance as test Mould, test mask amount to M；It will adjust with reference to litho machine and litho machine adjustable parameter to be matched to identical value, adjustable parameter packet Include light source form, numerical aperture of projection objective and projection objective wave aberration；It is successively loaded with reference to litho machine and litho machine to be matched Test mask is exposed and develops；Measure the CD of photoetching offset plate figure on silicon wafer respectively using CD detection system；If two light The mean square deviation for the difference between photoetching offset plate figure CD that the exposure of quarter machine generates is greater than target value CDRMSOr the difference between CD Maximum value is greater than target value CDMAX, then need to match litho machine；
3) litho machine matches:
The status file for referring to litho machine is read, lithography simulation software is set according to the status file of reference litho machine, Calculate threshold value TrUnder test mask aerial image CD value, be denoted asWherein i=1,2 ..., M；Read litho machine shape to be matched State File sets lithography simulation software according to litho machine status file to be matched；Set population scale N, mutation probability Vmutation_rate, crossover probability Vcorss_ratio, aerial image CD threshold value Tr, maximum number of iterations GmaxWith fitness threshold value Fs；
Initialize first generation chromosomeGained light source figure J will be measured with reference to litho machineRef(size Ns ×Ns) as an initial chromosome, other chromosomes generate at random for chromosome after coding；Coding mode is real coding, Light source chromosome after coding is
X=[g1,g2,…,gs], (1)
Wherein, gi∈ [0,1] is the intensity value of i-th of light source point, and S is the quantity summation of discrete light source point pixel；Iterative calculation to Match the target light source shape of litho machine, iteration specific steps are as follows:
1. to kth (k=1,2 ..., Gmax) generation chromosomeDecoding calculates corresponding light source figure respectivelyAccording to light source figureThreshold value T is calculated using the lithography simulation software by litho machine status file to be matched settingrUnder The CD value of aerial image, is denoted asAnd chromosome is calculated by following equation (2)Corresponding fitness letter Number Fj,k:
2. calculating kth for the smallest individual X of fitness in chromosomebest, fitness is denoted asIfOr enable K =k+1, if k > Gmax, enter step 5., otherwise enter step 3.；
3. according to crossover probability Vmutation_rateIt is carried out in kth for the chromosome that P need to carry out crossover operation is chosen in chromosome Crossover operation, crossover operation include the following steps:
Chromosome is selected using selection operator, the chromosome selected is denoted as Choosing Selecting operator is roulette operator or championship operator；Crossover operation, crossover operator are carried out to each pair of chromosome using crossover operator For
Xchild=Xparent1+Vrand·VRatio·(Xparent2-Xparent1), (3)
Wherein, VrandIt is random number, VRatioIt is cross parameter；Or
Xchild=Xparent2+R·(Xparent1-Xparent2), (4)
Wherein, R is cross parameter, Xparent1For the lesser individual of fitness function, the chromosome generated after crossover operation is denoted asThe P chromosome generated with crossover operationSubstitute the P chromosome chosen；
4. according to aberration rate Vmutation_rateTo kth for the chromosome of populationCarry out mutation operation；To jth A chromosomeVariation method are as follows: according to aberration rate Vmutation_rate?Middle selection randomly selects Q change point gi(i= 1,2 ..., Q), initial value is replaced with random number；Chromosome after completing mutation operation is denoted as k+1 for chromosome, and return step is 1.；
5. iteration is terminated, by XbestDecoded light source form JbestTarget light source shape as litho machine to be matched exports；
4) exposure verifying:
According to the lighting system target light source shape J of the litho machine to be matched solvedbestGenerate the photoetching to be matched for needing to adjust The parameter submenu of machine, i.e., the nominal parameter of litho machine light source setting to be matched；The parameter submenu input is to be matched Litho machine is adjusted adjustable parameter；Litho machine load test mask to be matched is exposed and develops；Use CD detection system The CD of photoetching offset plate figure on unified test amount silicon wafer；If two photo-etching machine exposals generate photoetching offset plate figure CD between difference it is equal Variance yields is less than target value CDRMSOr the maximum value of the difference between CD is less than target value CDMAX, then litho machine matching is completed, no Then it fails to match, needs to re-start Optical proximity correction (OPC) or source mask optimization (SMO) carries out again mask Design.
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CN108170006A (en) * 2017-12-12 2018-06-15 中国科学院上海光学精密机械研究所 Litho machine matching process

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Publication number Priority date Publication date Assignee Title
US20060044542A1 (en) * 2004-08-26 2006-03-02 Sangbong Park Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
CN101364048A (en) * 2008-08-27 2009-02-11 上海微电子装备有限公司 Photolithography illuminating apparatus and illuminating method
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