CN109031519B - A kind of narrow-band optical filter and all-optical diode - Google Patents
A kind of narrow-band optical filter and all-optical diode Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 60
- 239000004038 photonic crystal Substances 0.000 claims abstract description 156
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000005540 biological transmission Effects 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 230000005284 excitation Effects 0.000 claims abstract description 22
- 238000001914 filtration Methods 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims description 17
- 238000002834 transmittance Methods 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 13
- 238000000411 transmission spectrum Methods 0.000 description 5
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention discloses a kind of narrow-band optical filter and all-optical diodes.Narrow-band optical filter includes: the first, second photonic crystal panel；Wherein, the first, second photonic crystal panel is to be stacked alternately the 1-D photon crystal constituted by silicon layer in homogeneous thickness and silicon dioxide layer；First, second photonic crystal panel, which fits together to constitute, meets the 1-D photon crystal hetero-junctions of optical topology interfacial state shooting condition；The excitation of optical topology interfacial state shows as sharp transmission peaks occur in the common band gap of the first, second photonic crystal panel, and the transmissivity of two sides band remains as zero, to realize narrow-band filtering function；The central wavelength of transmission peaks is the operation wavelength of optical filter, and bandwidth is the bandwidth of operation of optical filter.All-optical diode includes above-mentioned filter and plane grating, and plane grating is fitted in one end of photon crystal heterojunction structure.Grating is used to control the excitation of topology interface state based on its diffraction to light, to realize the one-way transmission of light.
Description
Technical Field
The invention relates to an optical filtering technology and a unidirectional transmission technology, in particular to a narrow-band optical filter and an all-optical diode, belonging to the field of optical communication and optical calculation.
Background
All-optical diodes break the time-reversal symmetry of optical transmission by using special optical materials or by means of specific optical effects, so that optical signals pass in one direction and little or no optical signals pass in the opposite direction, like electrical diodes in integrated circuits, are key elements for optical computation, optical interconnection and ultrafast information processing.
At present, the all-optical diode can be realized based on the magneto-optical effect, the optical nonlinear effect and the space-time modulation technology, however, the application backgrounds all require the all-optical diode to be realized under the conditions of low power and easy integration, so the magneto-optical effect and the optical nonlinear effect which depend on the strong electromagnetic field and the space-time modulation technology which needs to realize modulation by means of an external electric field do not meet the application requirements. In view of the above, it is an urgent objective of the art to implement all-optical diodes in linear non-magnetic optical systems.
The invention realizes an all-optical diode in a linear non-magnetic optical system and simultaneously realizes a narrow-band optical filter.
Disclosure of Invention
In order to overcome the limitation of the prior art, the invention utilizes the advantage of unique control light propagation behavior possessed by an optical topological interface state, constructs a one-dimensional photonic crystal heterostructure based on two one-dimensional photonic crystals with different structures, and realizes the excitation of the optical topological interface state in the structure, thereby realizing a narrow-band optical filter; meanwhile, the invention further utilizes the sensitivity of the excitation of the optical topological interface state to the normal component of the incident light wave vector, introduces the grating and realizes the unidirectional transmission of light, namely the all-optical diode. The narrow-band optical filter and the all-optical diode provided by the invention have the advantages of small and exquisite structures, no dependence on strong fields, easiness in integration and the like.
The technical scheme of the invention is as follows:
a narrow-band optical filter, comprising:
a first photonic crystal slab and a second photonic crystal slab;
the first photonic crystal panel and the second photonic crystal panel are one-dimensional photonic crystals formed by alternately stacking silicon layers and silicon dioxide layers with uniform thicknesses, and the first photonic crystal panel and the second photonic crystal panel have different structural parameters;
the first photonic crystal flat plate and the second photonic crystal flat plate are attached together to form a one-dimensional photonic crystal heterostructure;
wherein the first photonic crystal slab and the second photonic crystal slab are designed to have bandgaps located in the same frequency band and topologically opposite to each other, thereby enabling the one-dimensional photonic crystal heterostructure to meet the condition of optical topological interface state excitation so as to excite the optical topological interface state in the common bandgap of the first photonic crystal slab and the second photonic crystal slab; the excitation of the optical topological interface state shows that a sharp transmission peak appears in a common band gap of the first photonic crystal panel and the second photonic crystal panel, and the transmittance of side bands on two sides of the transmission peak is still zero, so that the narrow-band filtering function is realized;
the central wavelength of the transmission peak is the working wavelength of the narrow-band optical filter, and the bandwidth of the transmission peak is the working bandwidth of the narrow-band optical filter.
Preferably, the silicon layer of the first photonic crystal slab is 0.680 μm thick, the silicon dioxide layer is 0.815 μm thick, and the cycle number is 5; the thickness of the silicon layer of the second photonic crystal flat plate is 0.685 mu m, the thickness of the silicon dioxide layer is 1.290 mu m, and the period is also 5; the refractive index of silicon is 2.82 and the refractive index of silicon dioxide is 1.46; the narrow band optical filter has an operating wavelength of 1.53953 μm, a bandwidth of 0.2nm, and a transmittance of 80% at the operating wavelength.
An all-optical diode, comprising:
a first photonic crystal slab, a second photonic crystal slab, and a planar grating;
the first photonic crystal panel and the second photonic crystal panel are one-dimensional photonic crystals formed by alternately stacking silicon layers and silicon dioxide layers with uniform thicknesses, and the first photonic crystal panel and the second photonic crystal panel have different structural parameters;
the first photonic crystal flat plate and the second photonic crystal flat plate are attached together to form a one-dimensional photonic crystal heterostructure;
the first photonic crystal panel and the second photonic crystal panel are designed to have band gaps which are located in the same frequency band and are opposite in topology, so that the one-dimensional photonic crystal heterostructure meets the condition of optical topological interface state excitation, and the optical topological interface state is excited in the common band gap of the first photonic crystal panel and the second photonic crystal panel; the excitation of the optical topological state shows that a sharp transmission peak appears in a common band gap of the first photonic crystal panel and the second photonic crystal panel, and the transmission rate of the side bands at the two sides of the transmission peak is still zero;
the planar grating is a one-dimensional planar grating formed by silicon materials, and the direction of the period of the planar grating is vertical to the direction of the periods of the first photonic crystal panel and the second photonic crystal panel;
the planar grating is attached to the second photonic crystal panel and used for controlling excitation of a topological interface state based on a diffraction effect of the planar grating on light, so that unidirectional transmission of the light is realized.
Preferably, the silicon layer of the first photonic crystal slab is 0.680 μm thick, the silicon dioxide layer is 0.815 μm thick, and the cycle number is 5; the thickness of the silicon layer of the second photonic crystal flat plate is 0.685 mu m, the thickness of the silicon dioxide layer is 1.290 mu m, and the cycle number is 5; the refractive index of silicon is 2.82 and the refractive index of silicon dioxide is 1.46; the grating period of the plane grating is 1.6 μm, the width of the grating bar is 0.800 μm, and the thickness is 0.767 μm; when the light enters from one side of the first photonic crystal flat plate, the transmission wavelength of the all-optical diode is 1.53953 mu m, the transmissivity of the all-optical diode is 90 percent, and the bandwidth of the all-optical diode is 0.2 nm; when the light enters from the side of the plane grating, the transmissivity of the all-optical diode is 2%.
The invention has the beneficial effects that: the invention can realize the narrow-band optical filter and the all-optical diode with micro-nano size at the same time, and the two have the advantages of simple structure, small size, flexible and adjustable parameters and easy integration.
Drawings
Fig. 1 is a schematic structural view of a narrow-band optical filter according to embodiment 1 of the present invention;
FIG. 2 is a band structure diagram of a one-dimensional photonic crystal slab according to embodiment 1 of the present invention;
FIG. 3 is a transmittance spectrum of a one-dimensional photonic crystal slab according to example 1 of the present invention;
FIG. 4 is a transmission spectrum of a one-dimensional photonic crystal heterostructure according to example 1 of the present invention;
FIG. 5 is the electric field strength and electric field relative amplitude distribution in the normal direction of the photonic crystal heterostructure according to example 1 of the present invention;
fig. 6 is a schematic structural diagram of an all-optical diode according to embodiment 2 of the present invention;
fig. 7 is the transmission spectrum of the full photodiode according to the embodiment 2 of the present invention at forward and reverse incidence;
fig. 8 is a diagram of the electric field distribution inside the structure when the all-optical diode according to embodiment 2 of the present invention is incident in forward and reverse directions;
fig. 9 shows the relative amplitude distribution of the electric field in the normal direction when the all-optical diode according to embodiment 2 of the present invention is incident in the forward and reverse directions.
Detailed Description
For a better understanding of the invention, the following further illustrates the contents of the invention with reference to examples and drawings, but the contents of the invention are not limited to the following examples.
Example 1: as shown in fig. 1, the narrow band optical filter proposed by the present invention includes:
a first photonic crystal slab and a second photonic crystal slab; wherein,
the first photonic crystal flat plate and the second photonic crystal flat plate are one-dimensional photonic crystals formed by alternately stacking silicon layers and silicon dioxide layers with uniform thickness, and the structural parameters of the first photonic crystal flat plate and the second photonic crystal flat plate are designed to ensure that band gaps which are positioned in the same frequency band and are opposite in topology are arranged in the energy band structures of the first photonic crystal flat plate and the second photonic crystal flat plate;
the first photonic crystal flat plate and the second photonic crystal flat plate are attached together to form a one-dimensional photonic crystal heterostructure;
the energy band structure of the first and second photonic crystal flat plates enables the one-dimensional photonic crystal heterostructure to meet the condition of optical topological interface state excitation, and the optical topological interface state is excited in the common band gap of the first and second photonic crystal flat plates, which shows that a sharp transmission peak appears in the common band gap of the first and second photonic crystal flat plates, and the transmittance of the two side bands of the transmission peak is still zero, so that the narrow-band filtering function is realized, the central wavelength of the transmission peak is the working wavelength of the narrow-band optical filter, and the bandwidth of the transmission peak is the working bandwidth of the narrow-band optical filter.
The energy band structure of the one-dimensional photonic crystal can be calculated based on the dispersion relation. The dispersion relation is:
wherein q is a Bloch wavevector in a direction normal to an interface of the silicon layer and the silicon dioxide layer; Λ is the period of the one-dimensional photonic crystal; k is a radical ofi＝niω/c，di,(i ═ 1 or 2) represents the wavevector, refractive index, thickness, and impedance of the silicon layer (i ═ 1) or the silicon dioxide layer (i ═ 2), respectively. Since both silicon and silicon dioxide are nonmagnetic media, μ in the formulai＝0。
In this embodiment, the thickness of the silicon layer of the first photonic crystal slab is 0.680 μm, the thickness of the silicon dioxide layer is 0.815 μm, and the number of cycles is 5; the thickness of the silicon layer of the second photonic crystal flat plate is 0.685 mu m, the thickness of the silicon dioxide layer is 1.290 mu m, and the period is also 5; the refractive index of silicon is 2.82 and the refractive index of silicon dioxide is 1.46.
The band structures of the first and second photonic crystal slabs were calculated according to the dispersion relations, and the results are shown in fig. 2. The Zak phase of each band is calculated by the method described in the literature [ phys. rev. x 4(2),021017,2014], the results of which are indicated in the figures and are respectively 0 or pi. The band gap is numbered with the number n (n-1, 2, … …). The sign of the topological phase of the nth bandgap is determined by the sum of the Zak phases of all the independent bands below the nth bandgap. The signs of the various bandgap topologies in the figure have been differentiated by color, with dark colors representing the topology as positive and light colors representing the topology as negative. As can be seen from the figure, the 4 th band gap of the first photonic crystal slab is consistent with the 5 th band gap of the second photonic crystal slab in position, has a common band gap with the frequency between 0.6/μm and 0.7/μm, and is opposite in topological sign, and the two are necessary conditions for the excitation of topological interface states in the photonic crystal heterostructure.
The transmittance of the first and second photonic crystal slabs is calculated by using a Finite Difference Time Domain (FDTD) method, and as a result, as shown in fig. 3, the transmission spectra near the common band gap of the first and second photonic crystal slabs are shown, and it can be seen from the figure that both have a very wide band gap with zero transmittance, and the transmission characteristics and the energy band structure characteristics are well matched.
The transmission spectrum of the one-dimensional photonic crystal heterostructure formed by the first photonic crystal flat plate and the second photonic crystal flat plate which are jointed together is further calculated by the same calculation method, and the calculation result is shown in figure 4. As can be seen by comparing fig. 4 and fig. 3, in the common band gap band of the two photonic crystal slabs, the transmission is zero when they are present alone, and when they are bonded together, it is no longer zero, but a sharp transmission peak with a maximum of 80% and a bandwidth of 0.2nm appears at a wavelength of 1.53953 μm (corresponding to a frequency of 0.64955/μm).
And calculating the electric field distribution in the one-dimensional photonic crystal heterostructure to analyze the transmission peak. FIG. 5 shows the electric field strength and the relative amplitude distribution of the electric field along the normal direction of the one-dimensional photonic crystal heterostructure at normal incidence. For ease of analysis, the one-dimensional photonic crystal heterostructure is also depicted and the spatial position in the electric field profile is closely aligned with the one-dimensional photonic crystal heterostructure. As is evident from the figure, the electric field is concentrated mainly near the interface of the two photonic crystal slabs. The presence of topological interface states at the interface of the two photonic crystal slabs is confirmed by the fact that the electric field amplitude is increased by a factor of 20 and the electric field strength is increased by a factor of 400 at the interface compared to the incident light. The transmission peak in fig. 4 is the excitation from the topological interface state at the interface of the two photonic crystal slabs. Furthermore, the periodic oscillating structure of the amplitude distribution results from a resonance phenomenon caused by multiple reflections occurring on different dielectric layer interfaces, similar to the resonance caused by multiple fabry-perot cavities.
The excitation conditions of the topological interface states are analyzed below. According to the prior art, the conditions for forming a topological interface state in the interface region of two different one-dimensional photonic crystals are as follows: the two one-dimensional photonic crystals have band gaps located in the same wavelength band and opposite topological phases. However, in the common band gap of the two photonic crystals, the topological boundary state is determined by the surface impedance matching condition, particularly at which wavelength. The surface impedance matching conditions are as follows:
Z1+Z2＝1
wherein Z1 and Z2 are the surface impedances of the first and second photonic crystal slabs on the left and right sides of the interface, respectively. Furthermore, Z1+ Z2 is equivalent to 1
|ri|＝1，(m is an integer) (i ═ 1 or 2)
Where ri and(i is 1 or 2) is the reflectivity and the reflection phase when the incident light is reflected by the first and second photonic crystal flat plates with semi-infinite left and right sides of the interface respectively. According to the transmission matrix method, the reflectivity of the multilayer dielectric film is sensitive to the normal component of the incident wave vector. We therefore conclude that: the resonant wavelength of the topological interface states is closely related to the normal component of the wave vector. The resonance wavelength generated when the incident light is normally incident is regarded as the initial resonance wavelength, if the incident angle is slightly changed, the normal component of the wave vector is correspondingly changed, and the resonance wavelength is changed, so that the resonance condition is not satisfied at the initial resonance wavelength, and the transmissivity is reduced to zero again due to the band gap effect.
According to the analysis, when the one-dimensional photonic crystals with two different structures have band gaps which are located in the same wave band and are opposite in topological phase, topological interface states are excited at the interfaces of the two photonic crystals, a transmission peak appears at the resonance wavelength of the common band gap of the two photonic crystals, when the incident light contains the resonance wavelength, the wavelength in the incident light can pass through the structure, and other wavelengths cannot pass through the structure, so that the narrow-band optical filter is realized by utilizing the principle. And because the resonant wavelength of the topological interface state is related to the normal component of the wave vector of the incident light, when the normal component of the wave vector of the incident light changes along with the incident angle, the working wavelength of the filter also changes.
Example 2: as shown in fig. 6, the all-optical diode proposed by the present invention includes:
the photonic crystal heterostructure of example 1, and a planar grating;
wherein, the plane grating is a one-dimensional plane grating made of silicon material, and the direction of the period is vertical to the direction of the period of the first and second photonic crystal flat plates in embodiment 1;
the planar grating is attached to the second photonic crystal slab in embodiment 1, and is used to control excitation of a topological interface state based on a diffraction effect of the planar grating on light, so as to realize unidirectional transmission of light.
In this embodiment, the planar grating changes the excitation condition of the interface state by its diffraction effect on light. When incident light enters from one side of the plane grating, the incident light is diffracted to a plurality of directions, and then the excitation condition of the topological interface state is not satisfied any more due to the fact that the normal component of the wave vector is reduced in most diffraction directions, and as a result, the resonance effect of the topological interface state is very weak, and the transmission is correspondingly and severely reduced. When the incident light enters from one side of the first photonic crystal flat plate, the excitation condition of the topological interface state is not affected, and the incident light with the wavelength of the resonance wavelength passes through the photonic crystal heterostructure and is diffracted to the other side through the plane grating. Therefore, when the incident light is normally incident from two sides of the all-optical diode, the transmission effect is completely different, and the effect of unidirectional transmission is realized. The stronger the diffraction effect of the grating, the better the one-way transmission effect.
In order to obtain better diffraction effect, the period of the plane grating is designed to be comparable to the resonance wavelength of the topological interface state, i.e. P ═ 1.6 μm. The width and thickness of the grid bars are optimized to be 0.800 μm and 0.767 μm respectively. At these parameters, most of the light is diffracted into higher diffraction orders, at which the normal component of the wave vector is reduced. Using the above parameters, the transmittance when light at the resonance wavelength of the topological interface state is normally incident on the all-optical diode from both sides is shown in fig. 7. As is apparent from the figure, at the topological interface state resonance wavelength 1.53953 μm, the initial sharp transmission peak completely disappears and the transmittance becomes as small as the side band in the band gap, close to zero, at the time of incidence from the plane grating side (reverse incidence). In contrast, at the topological interface state resonance wavelength of 1.53953 μm, the transmittance increases to 90% at incidence from the first photonic crystal slab (normal incidence) instead of decreasing to zero, and the full width at half maximum of the resonance transmission peak is about 0.2 nm. If desired, the bandwidth of the transmission peak can be reduced by increasing the number of periods of the two photonic crystals on either side of the interface, but the transmission at both sides of incidence is correspondingly reduced.
Fig. 8 shows the electric field distribution in the all-optical diode structure when the light is incident from both sides at the topological interface state resonance wavelength in the case of forward incidence. Where the arrow indicates the direction of incidence, the region between the two solid lines is the photonic crystal heterostructure and the solid line rectangle on the right indicates the position of the grating. It can be seen from this figure that at reverse incidence, as analyzed above, the field localization near the interface of the two photonic crystal slabs becomes very weak, and the transmission field in the left part of the all-optical diode structure is significantly weaker than the incident field, which means that the incident light cannot penetrate through the structure. However, at normal incidence, the topological interface states are clearly present near the interface of the two photonic crystal slabs, and the electric field distribution on the right side of the all-optical diode structure is also very strong, almost comparable to the incident field, indicating that the incident light has passed through the structure. In addition, due to the diffraction effect of the grating, the different diffraction levels at the output end region interfere with each other, resulting in a transmitted light field exhibiting a distinct interference pattern.
In order to further compare the transmission characteristics in forward and reverse incidence, fig. 9 shows the relative amplitude distribution of the electric field component in the incident direction in the structure, wherein the dotted line and the dashed line respectively represent the amplitude distribution in the forward incidence and the reverse incidence, and for comparison, the amplitude distribution of the initial interface state in the one-dimensional photonic crystal heterostructure without the grating is also shown by the solid line. As is evident from the figure, the forward and reverse incidence gives completely different electric field distributions. Compared with the amplitude distribution (black curve) when no grating is added, the amplitude during reverse incidence is greatly reduced, and the field local effect at the interface completely disappears; the field local effect during normal incidence is enhanced on the basis of the initial interface state, the amplitude near the plane interface of the two photonic crystal plates is enhanced by 40%, and the reason for the enhancement is that for normal incidence, incident light is incident on a plane grating from the left side, and part of light is reflected to a one-dimensional photonic crystal heterostructure, which is equivalent to the enhancement of the reflection coefficient of a multilayer film. Similar to the resonance of a fabry-perot cavity, the higher the reflection coefficient, the stronger the resonance. Thus, stronger interface state resonance results in both enhanced field localization effects and enhanced transmission.
In summary, the embodiment simultaneously implements the narrow-band optical filter and the all-optical diode based on the one-dimensional photonic crystal heterostructure, and the narrow-band optical filter and the all-optical diode are composed of two one-dimensional photonic crystal flat plates or two one-dimensional photonic crystal flat plates and a planar grating, so that the narrow-band optical filter and the all-optical diode have the advantages of simple structure and small size, and meet the requirements of silicon-based nano-photonic chip integration. Moreover, the interface state resonance wavelength, the transmission peak bandwidth and the diffraction light splitting performance of the grating of the photonic crystal heterostructure are determined by the structural parameters, so that filters and all-optical diodes with different working wavelengths and different bandwidths can be realized based on the structure.
Although the invention has been described in detail above with reference to a general description and specific examples, it will be apparent to one skilled in the art that modifications or improvements may be made thereto based on the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (2)
1. A narrow-band optical filter, comprising:
a first photonic crystal slab and a second photonic crystal slab;
the first photonic crystal panel and the second photonic crystal panel are one-dimensional photonic crystals formed by alternately stacking silicon layers and silicon dioxide layers with uniform thicknesses, and the first photonic crystal panel and the second photonic crystal panel have different structural parameters;
the first photonic crystal flat plate and the second photonic crystal flat plate are attached together to form a one-dimensional photonic crystal heterostructure;
wherein the first photonic crystal slab and the second photonic crystal slab are structured to have bandgaps located in the same frequency band and topologically opposite to each other, thereby enabling the one-dimensional photonic crystal heterostructure to satisfy the condition of optical topological interface state excitation so as to excite the optical topological interface state in the common bandgap of the first photonic crystal slab and the second photonic crystal slab; the excitation of the optical topological interface state shows that a sharp transmission peak appears in a common band gap of the first photonic crystal panel and the second photonic crystal panel, and the transmittance of side bands on two sides of the transmission peak is still zero, so that a narrow-band filtering function is realized;
the central wavelength of the transmission peak is the working wavelength of the narrow-band optical filter, and the bandwidth of the transmission peak is the working bandwidth of the narrow-band optical filter;
wherein:
the thickness of the silicon layer of the first photonic crystal flat plate is 0.680 mu m, the thickness of the silicon dioxide layer is 0.815 mu m, and the cycle number is 5;
the thickness of the silicon layer of the second photonic crystal flat plate is 0.685 mu m, the thickness of the silicon dioxide layer is 1.290 mu m, and the periodicity is 5;
the refractive index of silicon is 2.82 and the refractive index of silicon dioxide is 1.46;
the narrow band optical filter has an operating wavelength of 1.53953 μm, a bandwidth of 0.2nm, and a transmittance of 80% at the operating wavelength.
2. An all-optical diode, comprising:
a first photonic crystal slab, a second photonic crystal slab, and a planar grating;
the first photonic crystal panel and the second photonic crystal panel are one-dimensional photonic crystals formed by alternately stacking silicon layers and silicon dioxide layers with uniform thicknesses, and the first photonic crystal panel and the second photonic crystal panel have different structural parameters;
the first photonic crystal flat plate and the second photonic crystal flat plate are attached together to form a one-dimensional photonic crystal heterostructure;
wherein the first photonic crystal slab and the second photonic crystal slab are designed to have bandgaps located in the same frequency band and topologically opposite to each other, thereby enabling the one-dimensional photonic crystal heterostructure to satisfy the condition of optical topological interface state excitation so as to excite the optical topological interface state in the common bandgap of the first photonic crystal slab and the second photonic crystal slab; the excitation of the optical topological state is shown as that a sharp transmission peak appears in the common band gap of the first photonic crystal flat plate and the second photonic crystal flat plate, and the transmission rate of the two side bands at the two sides of the transmission peak is still zero;
the planar grating is a one-dimensional planar grating formed by silicon materials, and the direction of the period of the planar grating is vertical to the direction of the periods of the first photonic crystal panel and the second photonic crystal panel;
the plane grating is attached to the second photonic crystal flat plate and used for controlling excitation of the topological interface state based on the diffraction effect of the plane grating on light, so that unidirectional transmission of the light is realized;
wherein:
the thickness of the silicon layer of the first photonic crystal flat plate is 0.680 mu m, the thickness of the silicon dioxide layer is 0.815 mu m, and the cycle number is 5;
the thickness of the silicon layer of the second photonic crystal flat plate is 0.685 mu m, the thickness of the silicon dioxide layer is 1.290 mu m, and the periodicity is 5;
the refractive index of silicon is 2.82 and the refractive index of silicon dioxide is 1.46;
the grating period of the plane grating is 1.6 mu m, the width of the grating bar is 0.800 mu m, and the thickness of the grating bar is 0.767 mu m;
when the light enters from one side of the first photonic crystal flat plate, the transmission wavelength of the all-optical diode is 1.53953 μm, the transmissivity of the all-optical diode is 90%, and the bandwidth of the all-optical diode is 0.2 nm; when the light enters from the plane grating side, the transmittance of the all-optical diode is 2%.
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| CN110932091B (en) * | 2019-12-06 | 2020-10-09 | 北京大学 | Topological solid state laser and method based on energy band reversal light field limiting effect |
| ES2836854B2 (en) * | 2019-12-27 | 2021-10-27 | Univ Navarra Publica | Reconfigurable Modular Optical Distributor and System and Procedure for Transmitting an Optical Signal Using the Reconfigurable Modular Optical Distributor |
| CN111580198B (en) * | 2020-05-22 | 2021-12-31 | 中国科学院上海技术物理研究所 | Ultra-wide cut-off narrow band-pass filter based on Tamm state induction |
| CN111929755A (en) * | 2020-08-24 | 2020-11-13 | 上海大学 | Photonic crystal composite structure and semitransparent organic solar cell |
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| CN113193105B (en) * | 2021-04-22 | 2024-03-22 | 南京大学 | Superconducting nanowire single photon detector based on topological optimization |
| CN113777674B (en) * | 2021-09-06 | 2022-11-08 | 湖北科技学院 | Photonic crystal structure capable of realizing optical frequency comb |
| CN114293237B (en) * | 2022-01-04 | 2023-05-12 | 合肥工业大学 | Preparation method of one-dimensional topological photonic crystal based on porous alumina |
| CN114660680B (en) * | 2022-03-22 | 2023-08-15 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
| CN114740640B (en) * | 2022-04-22 | 2024-01-26 | 中国矿业大学 | Multichannel mid-infrared optical filter based on phase change material |
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| CN115291324B (en) * | 2022-07-08 | 2023-05-26 | 中国地质大学（武汉） | Silicon-based all-optical diode |
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| WO2003034113A2 (en) * | 2001-10-19 | 2003-04-24 | Nkt Research & Innovation A/S | Integrated photonic crystal structure and method of producing same |
| WO2003083533A2 (en) * | 2002-03-29 | 2003-10-09 | Massachusetts Institute Of Technology | Low voltage tunable filtre with photonic crystal |
| CN101431109B (en) * | 2008-12-03 | 2010-06-02 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
| CN101598883B (en) * | 2009-07-03 | 2011-06-22 | 北京邮电大学 | Implementation method of multi-defective one-dimensional photonic crystal all-optical switch with stable and controllable output state |
| CN202735536U (en) * | 2012-05-21 | 2013-02-13 | 河南科技大学 | Undoped layer photonic crystal optical filter with filtering scope from 430 to 630nm |
| CN102681069B (en) * | 2012-06-07 | 2013-12-25 | 太原理工大学 | One-dimensional photonic crystal full visible spectrum single-channel ultra-narrow band filter |
| CN104007496B (en) * | 2014-05-19 | 2016-05-25 | 河南科技大学 | A kind of photonic crystal filtering eyeglass and preparation method thereof |
| CN105842785A (en) * | 2016-05-20 | 2016-08-10 | 燕山大学 | Multichannel filter based on chirp porous silicon photonic crystal |
| CN106896434B (en) * | 2017-03-20 | 2023-09-08 | 南京邮电大学 | All-optical diode |
| CN107976733B (en) * | 2017-11-24 | 2021-02-09 | 苏州大学 | All-dielectric polarization-independent angle filter |
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