CN109023372A - Copper/molybdenum film layer etchant - Google Patents
Copper/molybdenum film layer etchant Download PDFInfo
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- CN109023372A CN109023372A CN201811013118.2A CN201811013118A CN109023372A CN 109023372 A CN109023372 A CN 109023372A CN 201811013118 A CN201811013118 A CN 201811013118A CN 109023372 A CN109023372 A CN 109023372A
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- acid
- etching
- mass fraction
- sodium
- etchant
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
A kind of copper/molybdenum film layer etchant, including uniformly mixed oxidant, organic acid, etching regulator, inorganic salts, chelating agent, etching inhibitor and solvent；Wherein, quality relative to entire combination object, the mass fraction of the oxidant is 5%~15%, the mass fraction of the organic acid is 4%~13%, the mass fraction of the etching regulator is 0.1%~5%, and the mass fraction of the inorganic salts is 0.1%~5%, and the mass fraction of the chelating agent is 0.5%~9%, the mass fraction of the etching inhibitor is 0.001%~1%, and surplus is the solvent.The utility model has the advantages that copper provided by the invention/molybdenum film layer etchant, reduces influence of the medical fluid to environment and device, etching efficiency and etching stability are improved.
Description
Technical field
The present invention relates to copper wiring etching field more particularly to a kind of copper/molybdenum film layer etchants.
Background technique
In recent years, with the increase of the demand of display, people also proposed more the quality and picture precision of product
High requirement, and the effect quality etched, directly affect the quality of circuit board manufacturing process, and then influence the matter of display image
Amount.With the increase of display sizes, the length of the metal wirings such as the grid line and data line that connect with thin film transistor (TFT) can increase
Add, the resistance of metal wiring will increase therewith, the problems such as generating signal delay.
Currently, the metal wiring of display generallys use copper metal, compared to aluminum metal, the resistance value of copper is low, processability
Can be excellent, the line width of copper conductor does not need the width for reaching aluminum conductor, can improve the penetration of display and making for backlight
With efficiency, therefore copper conductor is more suitable the production for high-resolution panel.
The formation of copper wiring pattern is general in display panel are as follows: copper/molybdenum film is first formed on substrate, molybdenum can increase copper
With the adhesion of substrate, while diffusion of the copper on substrate can be prevented；The photoetching of predetermined pattern is formed on copper/molybdenum film again
Glue；Later, copper/molybdenum film is performed etching using etching solution, to form metallic circuit.But traditional fluorine containing etchant liquid tool
It is corrosive, etches inefficiency, stability is poor, and unfriendly to environment.
Summary of the invention
The present invention provides a kind of copper/molybdenum film layer etchant, to solve existing etching solution, due to containing fluorination
Object has a negative impact to device and environment, and etches inefficiency, and then influences the technical issues of showing.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of copper/molybdenum film layer etchant, including uniformly mixed oxidant, organic acid, erosion
Carve regulator, inorganic salts, chelating agent, etching inhibitor and solvent；Wherein, the quality relative to entire combination object, the oxygen
The mass fraction of agent is 5%~15%, and the mass fraction of the organic acid is 4%~13%, the matter of the etching regulator
Measuring score is 0.1%~5%, and the mass fraction of the inorganic salts is 0.1%~5%, and the mass fraction of the chelating agent is
0.5%~9%, the mass fraction of the etching inhibitor is 0.001%~1%, and surplus is the solvent.
In at least one embodiment of the invention, the oxidant is hydrogen peroxide.
In at least one embodiment of the invention, the solvent is deionized water.
According to one preferred embodiment of the present invention, the organic acid is selected from acetic acid, hydroxyacetic acid, 2- hydroxy propane -1,2,3-
Tricarboxylic acids, benzoic acid, ethanedioic acid, succinic acid, 2,3 dihydroxybutanedioic acid, 2- hydroxysuccinic acid, 2 hydroxy propanoic acid, adjacent benzene two
At least one of formic acid.
In at least one embodiment of the invention, the etching regulator is aminated compounds.
In at least one embodiment of the invention, the etching regulator be selected from diisopropanolamine (DIPA), polyacrylamide,
At least one of phenylenediamine, parachloroanilinum, monoisopropanolamine.
In at least one embodiment of the invention, the inorganic salts are selected from least one of sodium salt, magnesium salts, sylvite.
In at least one embodiment of the invention, the inorganic salts be selected from sodium chloride, magnesium chloride, potassium chloride, sodium sulphate,
At least one of magnesium sulfate, potassium sulfate, sodium nitrate, magnesium nitrate, potassium nitrate, sodium acetate, magnesium acetate, potassium acetate.
In at least one embodiment of the invention, the chelating agent be selected from sodium stannate, sodium pyrophosphate, 8-hydroxyquinoline,
At least one of chitosan.
In at least one embodiment of the invention, the etching inhibitor is selected from 6- nitrobenzimidazole, 2- amino thiophene
Azoles, 2- amino -5- nitrothiazole, 5- aminotetrazole, 3- amino -1,2,4- triazole, benzotriazole, benzotriazole, azoles nitrogen
At least one of sodium, thin base benzotriazole.
The invention has the benefit that copper provided by the invention/molybdenum film layer etchant, reduces medical fluid to ring
The influence in border and device improves etching efficiency and etching stability.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is copper/molybdenum film layer schematic cross-section when etchant of the invention is etched；
Fig. 2 is copper/molybdenum film layer electron microscope when the etchant of the embodiment of the present invention one performs etching；
Fig. 3 is another electron microscope of copper/molybdenum film layer when the etchant of the embodiment of the present invention one performs etching.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention adversely affects environment and device due to containing fluoride for existing etching solution, and etches
The problem of inefficiency, the present embodiment are able to solve the defect.
The present invention provides a kind of copper/molybdenum film layer etchant, comprising: uniformly mixed oxidant, organic acid, erosion
Carve regulator, inorganic salts, chelating agent, etching inhibitor and solvent.
Wherein, the quality relative to entire combination object, the mass fraction of the oxidant is 5%~15%, described organic
The mass fraction of acid is 4%~13%, and the mass fraction of the etching regulator is 0.1%~5%, the quality of the inorganic salts
Score is 0.1%~5%, and the mass fraction of the chelating agent is 0.5%~9%, and the mass fraction of the etching inhibitor is
0.001%~1%, surplus is the solvent.
The etch temperature of the etchant is 25~35 degrees Celsius, and at this temperature, etch effect is preferable.
The oxidant is hydrogen peroxide, and the solvent is deionized water.
The organic acid is selected from acetic acid, hydroxyacetic acid, 2- hydroxy propane -1,2,3- tricarboxylic acids, benzoic acid, ethanedioic acid, fourth
At least one of diacid, 2,3 dihydroxybutanedioic acid, 2- hydroxysuccinic acid, 2 hydroxy propanoic acid, phthalic acid.
The etching regulator is aminated compounds, specifically, the etching regulator can be diisopropanolamine (DIPA), polypropylene
One of amide, m-phenylene diamine (MPD), parachloroanilinum, monoisopropanolamine or multiple combinations, when performing etching, described in adjusting
The content of etching inhibitor in etchant, is adjusted the etching speed of copper/molybdenum film layer, so that film layer has appropriate cone
The etching outline at angle.
The inorganic salts can be with one of inorganic sodium, inorganic magnesium salt, inorganic potassium salt or multiple combinations, specifically, institute
Stating inorganic salts can be sodium chloride, magnesium chloride, potassium chloride, sodium sulphate, magnesium sulfate, potassium sulfate, sodium nitrate, magnesium nitrate, potassium nitrate, vinegar
One of sour sodium, magnesium acetate, potassium acetate or multiple combinations.
The chelating agent is selected from one of sodium stannate, sodium pyrophosphate, 8-hydroxyquinoline, chitosan or a variety of.
The etching inhibitor is selected from 6- nitrobenzimidazole, thiazolamine, 2- amino -5- nitrothiazole, 5- amino
Tetrazole, 3- amino -1,2,4- triazole, benzotriazole, benzotriazole, azoles nitrogen sodium, dredge base benzotriazole at least one
Kind.
It is illustrated combined with specific embodiments below.
Copper provided in this embodiment/molybdenum film layer etchant includes: hydrogen peroxide, 2- hydroxy propane -1,2,3-
Tricarboxylic acids, diisopropanolamine (DIPA), 8-hydroxyquinoline, sodium chloride, benzotriazole.
As shown in table 1, table 1 is the composition table of etchant, each relative to the quality of whole etchant
Mass fraction shared by constituent is respectively as follows: hydrogen peroxide 10%, 2- hydroxy propane -1,2,3- tricarboxylic acids 8%, diisopropanol
Amine 3%, 8-hydroxyquinoline 2.5%, sodium chloride 0.5%, benzotriazole 0.02%, deionized water 75.98%.
Table 1
As shown in Figure 1, will be connect with copper/molybdenum film layer device and etching solution when being generally etched to copper/molybdenum film layer
Touching, described device includes: substrate 11, copper/molybdenum film layer 12 and photoresist 13.
Etching solution of good performance is able to suppress the lateral erosion amount of film layer, so that the film layer cross sectional shape after etching is providing
In the range of.In general, the planar shaped at 11 place of the lateral erosion facet of the copper after etching/molybdenum film layer 12 end and the substrate
At cone angle be 30~60 degree preferable, the endpoint of the lower surface of the photoresist 13 of the same side to the copper-molybdenum film layer 12
The vertical range m (CD Loss) of the endpoint of lower surface is preferably less than 1 micron.
As shown in Fig. 2, under the conditions of etch temperature is 35, using scanning electron microscope (SEM) to the film layer after etching
It is observed, statistics indicate that, cone angle is 46.2 degree, and CD Loss is 0.78 micron, as shown in figure 3, utilizing the erosion of the present embodiment
Carving the film layer after liquid composition is etched does not have molybdenum residual.It can thus be seen that come, etchant provided by the invention
Etch effect is good.
The utility model has the advantages that copper provided by the invention/molybdenum film layer etchant, medical fluid is reduced to environment and device
It influences, improves etching efficiency and etching stability.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of copper/molybdenum film layer etchant characterized by comprising
Uniformly mixed oxidant, organic acid, etching regulator, inorganic salts, chelating agent, etching inhibitor and solvent；
Wherein, the quality relative to entire combination object, the mass fraction of the oxidant are 5%~15%, the organic acid
Mass fraction is 4%~13%, and the mass fraction of the etching regulator is 0.1%~5%, the mass fraction of the inorganic salts
It is 0.1%~5%, the mass fraction of the chelating agent is 0.5%~9%, and the mass fraction of the etching inhibitor is
0.001%~1%, surplus is the solvent.
2. etchant according to claim 1, which is characterized in that the oxidant is hydrogen peroxide.
3. etchant according to claim 1, which is characterized in that the solvent is deionized water.
4. etchant according to claim 1, which is characterized in that the organic acid be selected from acetic acid, hydroxyacetic acid,
2- hydroxy propane -1,2,3- tricarboxylic acids, benzoic acid, ethanedioic acid, succinic acid, 2,3 dihydroxybutanedioic acid, 2- hydroxysuccinic acid,
At least one of 2 hydroxy propanoic acid, phthalic acid.
5. etchant according to claim 1, which is characterized in that the etching regulator is aminated compounds.
6. etchant according to claim 5, which is characterized in that the etching regulator is selected from diisopropanol
At least one of amine, polyacrylamide, m-phenylene diamine (MPD), parachloroanilinum, monoisopropanolamine.
7. etchant according to claim 1, which is characterized in that the inorganic salts are selected from sodium salt, magnesium salts, sylvite
At least one of.
8. etchant according to claim 7, which is characterized in that the inorganic salts be selected from sodium chloride, magnesium chloride,
Potassium chloride, sodium sulphate, magnesium sulfate, potassium sulfate, sodium nitrate, magnesium nitrate, potassium nitrate, sodium acetate, magnesium acetate, in potassium acetate at least
It is a kind of.
9. etchant according to claim 1, which is characterized in that the chelating agent is selected from sodium stannate, pyrophosphoric acid
At least one of sodium, 8-hydroxyquinoline, chitosan.
10. etchant according to claim 1, which is characterized in that the etching inhibitor is selected from 6- nitrobenzene
And parallel three nitrogen of imidazoles, thiazolamine, 2- amino -5- nitrothiazole, 5- aminotetrazole, 3- amino -1,2,4- triazole, benzene
At least one of azoles, benzotriazole, azoles nitrogen sodium, thin base benzotriazole.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811013118.2A CN109023372A (en) | 2018-08-31 | 2018-08-31 | Copper/molybdenum film layer etchant |
| PCT/CN2018/105231 WO2020042223A1 (en) | 2018-08-31 | 2018-09-12 | Etching solution composition for copper/molybdenum film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811013118.2A CN109023372A (en) | 2018-08-31 | 2018-08-31 | Copper/molybdenum film layer etchant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109023372A true CN109023372A (en) | 2018-12-18 |
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ID=64622686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811013118.2A Pending CN109023372A (en) | 2018-08-31 | 2018-08-31 | Copper/molybdenum film layer etchant |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109023372A (en) |
| WO (1) | WO2020042223A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109930153A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid and etching device |
| CN109930154A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
| CN110079803A (en) * | 2019-04-24 | 2019-08-02 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
| CN113106454A (en) * | 2021-03-24 | 2021-07-13 | Tcl华星光电技术有限公司 | Etching solution and etching method of copper/molybdenum metal wire |
| CN114540818A (en) * | 2022-02-15 | 2022-05-27 | 江西省科学院应用物理研究所 | Copper-magnesium-silicon alloy metallographic corrosive agent and metallographic structure display method thereof |
| CN115505389A (en) * | 2022-08-22 | 2022-12-23 | 福建天甫电子材料有限公司 | ITO etching solution and use method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105803459A (en) * | 2016-05-03 | 2016-07-27 | 苏州晶瑞化学股份有限公司 | Micro-electronic multilayer metal film etching liquid and application thereof |
| CN107075693A (en) * | 2014-11-18 | 2017-08-18 | 关东化学株式会社 | Copper, molybdenum stacked film etchant, the engraving method using said composition and extend said composition life-span method |
| CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
| CN108004550A (en) * | 2017-12-29 | 2018-05-08 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102206A (en) * | 2009-12-18 | 2011-06-22 | 鑫林科技股份有限公司 | Metal etching liquid composition and etching method |
| CN103924244A (en) * | 2013-01-14 | 2014-07-16 | 易安爱富科技有限公司 | Etching Liquid Composition Of Copper/molybdenum Film Or Copper/molybdenum Alloy Film |
| KR20150050948A (en) * | 2013-11-01 | 2015-05-11 | 솔브레인 주식회사 | Etchant composition for Cu/Mo alloy film |
| KR102255577B1 (en) * | 2014-08-25 | 2021-05-25 | 엘지디스플레이 주식회사 | Etching composition |
-
2018
- 2018-08-31 CN CN201811013118.2A patent/CN109023372A/en active Pending
- 2018-09-12 WO PCT/CN2018/105231 patent/WO2020042223A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107075693A (en) * | 2014-11-18 | 2017-08-18 | 关东化学株式会社 | Copper, molybdenum stacked film etchant, the engraving method using said composition and extend said composition life-span method |
| CN105803459A (en) * | 2016-05-03 | 2016-07-27 | 苏州晶瑞化学股份有限公司 | Micro-electronic multilayer metal film etching liquid and application thereof |
| CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
| CN108004550A (en) * | 2017-12-29 | 2018-05-08 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109930153A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid and etching device |
| CN109930154A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
| CN110079803A (en) * | 2019-04-24 | 2019-08-02 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
| CN110079803B (en) * | 2019-04-24 | 2020-11-24 | 深圳市华星光电技术有限公司 | Etching liquid, etching combination liquid and etching method |
| CN109930153B (en) * | 2019-04-24 | 2021-01-01 | 深圳市华星光电技术有限公司 | Etching liquid and etching device |
| CN113106454A (en) * | 2021-03-24 | 2021-07-13 | Tcl华星光电技术有限公司 | Etching solution and etching method of copper/molybdenum metal wire |
| CN114540818A (en) * | 2022-02-15 | 2022-05-27 | 江西省科学院应用物理研究所 | Copper-magnesium-silicon alloy metallographic corrosive agent and metallographic structure display method thereof |
| CN114540818B (en) * | 2022-02-15 | 2023-11-10 | 江西省科学院应用物理研究所 | Copper magnesium silicon alloy metallographic corrosive and metallographic structure display method thereof |
| CN115505389A (en) * | 2022-08-22 | 2022-12-23 | 福建天甫电子材料有限公司 | ITO etching solution and use method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020042223A1 (en) | 2020-03-05 |
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