CN109004088A - A kind of preparation method of organic semiconductor thin film transistor - Google Patents
A kind of preparation method of organic semiconductor thin film transistor Download PDFInfo
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- CN109004088A CN109004088A CN201810740493.0A CN201810740493A CN109004088A CN 109004088 A CN109004088 A CN 109004088A CN 201810740493 A CN201810740493 A CN 201810740493A CN 109004088 A CN109004088 A CN 109004088A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
Abstract
The invention discloses a kind of preparation method of organic semiconductor thin film transistor, the active layer and insulating layer of this method are to revolve one step of Tu technique by chemistry to complete.Organic semiconducting materials and insulating polymer are dissolved into same solvent simultaneously respectively, form precursor solution, then directly by precursor solution rotation Tu on the gate electrode layer of thin film transistor (TFT), due to the chemical incompatibility between different component, film vertically occurs mutually to separate, insulating polymer is caused to be formed in spin-coated thin film bottom and contact with gate electrode, and organic semiconductor is located above insulating polymer, so that a step obtains the active layer and insulating layer of Organic Thin Film Transistors.The technique can prepare active layer and insulating layer simultaneously, can simplify preparation process, reduce interface state defects, improve the electric property of thin film transistor (TFT).Preparation method of the present invention is simple, production cost is low, thus large area, inexpensive Organic Thin Film Transistors preparation in there is very great application value.
Description
Technical field
The invention belongs to organic electronic technical fields, and in particular to a kind of preparation side of organic semiconductor thin film transistor
Method.
Background technique
Thin film transistor (TFT) is to be widely used in active matrix display, photoelectric sensor, film-type memory and air-sensitive
The fields such as sensor, it is made of substrate, gate electrode, insulating layer, active layer and source-drain electrode.Organic semiconductor thin film transistor
Refer to that wherein active layer uses organic semiconducting materials.With silicon, the film crystal that metal-oxide semiconductor (MOS) is active layer
Pipe is compared, and organic film has good flexibility, light weight and easy to carry, can facilitate the preparation of large-area displays device.
The performance that device can be improved by modification organic molecular structure, gos deep into moving for Organic Thin Film Transistors with research and development
The performances such as shifting rate, switching current ratio have all obtained large-scale raising, therefore in liquid crystal and display of organic electroluminescence, sensing
The fields such as device, electronic tag have been widely used.
The masking technique of organic film is relatively more, does not need under high vacuum environment, can prepare film at low temperature, makes work
Skill is simple, can reduce the production cost of device.The excellent dissolubility of organic semiconductor can be prepared thin using solution rotation Tu method
Film, spin-coating method preparation speed is fast, and good compatibility, choice of the substrates is than wide.Spin coating macromolecule membrane has preferable uniformity
And stability, so that it is widely used in the preparation process of Organic Thin Film Transistors.
Active layer and insulating layer in usual thin film transistor (TFT) are prepared in two steps, this not only consumes the plenty of time, increases
Add manufacturing cost, be also easy to that impurity is caused to pollute, increases interface charge density, to influence the electrical property of thin film transistor (TFT)
Matter.Therefore simplify preparation process, improve the stability of device as one important research direction of Organic Thin Film Transistors.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of preparation method of organic semiconductor thin film transistor, wherein
Active layer and insulating layer are to revolve one step of Tu technique by chemistry to obtain.
The present invention adopts the following technical scheme:
A kind of preparation method of organic semiconductor thin film transistor, the transistor include the substrate successively laid from bottom to up,
Gate electrode layer, insulating layer and active layer are laid with source electrode and drain electrode on the active layer；
The preparation of transistor is the following steps are included: organic semiconducting materials and insulating polymer are dissolved into organic solvent, shape
At precursor mixed solution, then by precursor mixed solution rotation Tu on the gate electrode layer of substrate, insulating polymer is in
Spin-coated thin film bottom is simultaneously contacted with gate electrode layer, forms insulating layer, and organic semiconducting materials are located above insulating polymer, is formed
Then active layer is dried, source electrode and drain electrode is finally prepared on active layer, forms organic semiconductor thin-film crystal
Pipe.
Further, the substrate is glass or silicon wafer, gate electrode layer be adhere to ito thin film on substrate or Au,
Ag or Al film.
Further, the organic semiconducting materials are that small molecule type organic semiconducting materials or conjugated polymer type are organic
Semiconductor material；Small molecule type organic semiconducting materials are any one in fullerene, pentacene, phthalocyanine or metal complex
Kind；The conjugated polymer type organic semiconducting materials are any one in polyacetylene or polythiophene and its derivative.
Further, the insulating polymer is polystyrene, polyphenylene oxide, polylactic acid, polymethyl methacrylate, polyethers
Any one in acid imide or polybutadiene.
Further, the concentration of the precursor mixed solution is 5~15mg/mL, organic half in precursor mixed solution
The mass ratio of conductor material and insulating polymer is (3~30): 100.
Further, the organic solvent is any one in chloroform, meta-xylene, carbon disulfide or o-dichlorohenzene.
Further, the speed of the spin coating is 1000~3000rpm, and the time of spin coating is 30~60s.
Further, the temperature of the drying is 50 DEG C~90 DEG C, and the dry time is 1~5h.
Further, the drain electrode and source electrode are prepared using Vacuum sublimation, drain electrode and source electrode
Material is Au.
A kind of method preparing organic semiconductor thin film transistor provided by the invention, be by organic semiconducting materials and absolutely
Edge polymer is dissolved into organic solvent, forms precursor mixed solution.Then by the method for spin coating, while active layer is prepared
And insulating layer.Its principle is due to the chemical incompatibility between different component, and film vertically occurs during revolving Tu
It mutually separates, insulating polymer is located at spin-coated thin film bottom and is in contact with gate electrode, and organic semiconducting materials are located at insulation and gather
It closes at the top of object.Rotation Tu film is dried, removes organic solvent, then in source electrode and drain electrode prepared above, i.e.,
Obtain Organic Thin Film Transistors.
Compared with prior art, the beneficial effects of the present invention are:
1, the present invention prepares active layer and insulating layer simultaneously by the rotation Tu technique of low cost, can reduce manufacturing cost, reduces
Interface pollution improves the performance of thin film transistor (TFT), has very great application in the preparation of inexpensive Organic Thin Film Transistors
Value.
2, the present invention precursor mixed solution directly revolve Tu silicon wafer (conductive silicon wafer, both as substrate and also be used as grid electricity
Pole) or ito glass on, active layer and insulating layer are simultaneously using rotation Tu preparation.Modification has been not necessarily on silicon wafer or ito glass
Insulating layer (such as silica).
Detailed description of the invention
Fig. 1 is a kind of device junction composition of organic semiconductor thin film transistor of the present invention.
Fig. 2 is the curve of output of gained organic semiconductor thin film transistor in embodiment 1.The curve of output is different grid
Under pole tension, the source-drain current change curve of thin film transistor (TFT).Grid voltage is 0~2V, amplification 0.5V in figure.
The curve of output of gained organic semiconductor thin film transistor in Fig. 3 embodiment 2.The curve of output is different grids
Under voltage, the source-drain current change curve of thin film transistor (TFT).Grid voltage is 0~2V, amplification 0.5V in figure.
In attached drawing, 1 is substrate, and 2 be gate electrode layer, and 3 be insulating layer, and 4 be active layer, and 5 be source electrode, and 6 be drain electrode.
Specific embodiment
Following embodiment is technical solution in order to better illustrate the present invention, rather than limits guarantor of the invention with this
Protect range.
Embodiment 1
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting ito glass as substrate, the ito thin film on glass is as gate electrode layer.Ito glass successively use acetone,
Dehydrated alcohol and deionized water ultrasound 10min, and with being dried with nitrogen, then ito thin film is cleaned in ozone clean machine
20min。
Step 2: organic semiconducting materials P3HT, insulating polymer PMMA(polymethyl methacrylate) is dissolved in chloroform
In, form precursor mixed solution.The concentration of precursor mixed solution be 10mg/mL, wherein organic semiconducting materials P3HT with
The mass ratio of insulating polymer PMMA is 30:100.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred
It mixes, stirs 2h under the conditions of 60 DEG C.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film on ito glass using sol evenning machine, revolve Tu speed
For 1500rpm, spin coating 40s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically
Generation mutually separates.Insulating polymer is located at spin-coated thin film bottom and contacts with ito thin film, forms insulating layer, organic semiconductor material
Material position forms active layer at the top of insulating polymer.
Step 4: rotation Tu film being dried, drying temperature is 60 DEG C, drying time 2h.
Step 5: being finally deposited Au on active layer using metal mask plate, form source electrode and drain electrode to get to having
Machine semiconductor thin-film transistor.The thickness of source electrode and drain electrode is 40nm.
Electrical testing is carried out to gained organic semiconductor thin film transistor using 4200 characteristic of semiconductor tester of Keithley,
It was found that the device has preferable field-effect characteristic, and it is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current
It is 1.6 × 10-2Microampere, is shown in Fig. 2.
Embodiment 2
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting conductive silicon chip as substrate, while also as the gate electrode layer of device.Conductive silicon chip successively uses acetone, nothing
Water-ethanol and deionized water ultrasound 10min, and with being dried with nitrogen, then to Wafer Cleaning 20min in ozone clean machine.
Step 2: organic semiconducting materials P3HT, insulating polymer PS(polystyrene) being dissolved in chloroform, before formation
Drive body mixed solution.The concentration of precursor mixed solution is 8mg/mL, wherein organic semiconducting materials P3HT and insulating polymer
The mass ratio of PS is 10:100.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred, in room temperature condition
Lower stirring 2h.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film on silicon wafer using sol evenning machine, revolve the speed of Tu
For 1000rpm, spin coating 60s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically
Generation mutually separates.Insulating polymer PS is located at spin-coated thin film bottom and contacts with silicon wafer, forms insulating layer, organic semiconductor P3HT
At the top of insulating polymer, active layer is formed.
Step 4: rotation Tu film being dried, drying temperature is 90 DEG C, drying time 2h.
Step 5: being finally deposited Au on active layer using metal mask plate, form source electrode and drain electrode to get to having
Machine semiconductor thin-film transistor.The thickness of source electrode and drain electrode is 50nm.
Electrical testing is carried out to gained organic semiconductor thin film transistor using 4200 characteristic of semiconductor tester of Keithley,
It was found that the device has good field-effect characteristic.It is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current is
4.3×10-2Microampere, is shown in Fig. 3.
Embodiment 3
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting ito glass as substrate, the ito thin film on glass is as gate electrode layer.Ito glass successively use acetone,
Dehydrated alcohol and deionized water ultrasound 10min, and with being dried with nitrogen, then ito thin film is cleaned in ozone clean machine
20min。
Step 2: organic semiconducting materials pentacene, insulating polymer polybutadiene being dissolved in meta-xylene, formed
Precursor mixed solution.The concentration of precursor mixed solution is that 13mg/mL, wherein organic semiconducting materials pentacene and insulation are poly-
The mass ratio for closing object polybutadiene is 3:10.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred,
2h is stirred under the conditions of 60 DEG C.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film on ito glass using sol evenning machine, revolve Tu speed
For 3000rpm, spin coating 30s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically
Generation mutually separates.Insulating polymer is located at spin-coated thin film bottom and contacts with ito thin film, forms insulating layer, organic semiconductor material
Material position forms active layer at the top of insulating polymer.
Step 4: rotation Tu film being dried, drying temperature is 50 DEG C, drying time 5h.
Step 5: being finally deposited Au on active layer using metal mask plate, form source electrode and drain electrode to get to having
Machine semiconductor thin-film transistor.The thickness of source electrode and drain electrode is 40nm.
Electrical testing is carried out to gained organic semiconductor thin film transistor using 4200 characteristic of semiconductor tester of Keithley,
It was found that the device has preferable field-effect characteristic, and it is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current
It is 5.3 × 10-1Microampere.
Embodiment 4
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting conductive silicon chip as substrate, while also as the gate electrode layer of device.Conductive silicon chip successively uses acetone, nothing
Water-ethanol and deionized water ultrasound 10min, and with being dried with nitrogen, then to Wafer Cleaning 20min in ozone clean machine.
Step 2: organic semiconducting materials polyacetylene, insulating polymer polyetherimide being dissolved in o-dichlorohenzene, shape
At precursor mixed solution.The concentration of precursor mixed solution is 5mg/mL, wherein organic semiconducting materials polyacetylene and insulation
The imido mass ratio of polyether is 5:100.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred
It mixes, stirs 2h at room temperature.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film in silicon wafer using sol evenning machine, rotation Tu speed is
2500rpm, spin coating 35s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically sent out
It is raw mutually to separate.Insulating polymer polyetherimide is located at spin-coated thin film bottom and contacts with silicon wafer, forms insulating layer, organic partly to lead
Body material polyacetylene is located at the top of insulating polymer, forms active layer.
Step 4: rotation Tu film being dried, drying temperature is 90 DEG C, drying time 1h.
Step 5: Au is finally deposited on active layer using metal mask plate, formed source electrode and drain electrode to get
To organic semiconductor thin film transistor.The thickness of source electrode and drain electrode is 50nm.
Electrical testing, hair are carried out using organic semiconductor thin film transistor obtained by 4200 characteristic of semiconductor tester of Keithley
Now the device has good field-effect characteristic.It is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current is
7.3×10-2Microampere.
Embodiment 5
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting ito glass as substrate, the ito thin film on glass is as gate electrode layer.Ito glass successively use acetone,
Dehydrated alcohol, deionized water ultrasound 10min, and with being dried with nitrogen, 20min then is cleaned to ito thin film in ozone clean machine.
Step 2: organic semiconducting materials phthalocyanine, insulating polymer polyphenylene oxide being dissolved in carbon disulfide, forerunner is formed
Body mixed solution.The concentration of precursor mixed solution is that 6mg/mL, wherein organic semiconducting materials phthalocyanine and insulating polymer are poly-
The mass ratio of phenylate is 10:100.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred, in 60 DEG C of items
2h is stirred under part.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film on ito glass using sol evenning machine, revolve Tu speed
For 2000rpm, spin coating 50s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically
Generation mutually separates.Insulating polymer is located at spin-coated thin film bottom and contacts with ito thin film, forms insulating layer, organic semiconductor material
Material position forms active layer at the top of insulating polymer.
Step 4: rotation Tu film being dried, drying temperature is 80 DEG C, drying time 2h.
Step 5: finally be deposited Au electrode on active layer using metal mask plate, formation source electrode and drain electrode to get
To organic semiconductor thin film transistor.The thickness of source electrode and drain electrode is 40nm.
Electrical testing is carried out to gained organic semiconductor thin film transistor using 4200 characteristic of semiconductor tester of Keithley,
It was found that the device has preferable field-effect characteristic, and it is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current
It is 2.8 × 10-1Microampere.
Embodiment 6
A kind of preparation of organic semiconductor thin film transistor, comprising the following steps:
Step 1: selecting conductive silicon chip as substrate, while also as the gate electrode layer of device.Conductive silicon chip successively uses acetone, nothing
Water-ethanol and deionized water ultrasound 10min, and with being dried with nitrogen, then to Wafer Cleaning 20min in ozone clean machine.
Step 2: organic semiconducting materials P3HT, insulating polymer polylactic acid being dissolved in chloroform, it is mixed to form presoma
Close solution.The concentration of precursor mixed solution is 7mg/mL, wherein organic semiconducting materials P3HT and insulating polymer polylactic acid
Mass ratio be 20:100.Prepared precursor mixed solution is placed on magnetic stirring apparatus and is stirred, at room temperature
Stir 2h.
Step 3: after the completion of precursor mixed solution is prepared, revolving Tu film in silicon wafer using sol evenning machine, rotation Tu speed is
3000rpm, spin coating 30s.Since the surface of different component can be not identical with surface affinity, spin-coated thin film is vertically sent out
It is raw mutually to separate.Insulating polymer polylactic acid is located at spin-coated thin film bottom and contacts with silicon wafer, forms insulating layer, organic semiconductor
P3HT is located at the top of insulating polymer, forms active layer.
Step 4: rotation Tu film being dried, drying temperature is 70 DEG C, drying time 3h.
Step 5: Au is finally deposited on active layer using metal mask plate, formed source electrode and drain electrode to get
To organic semiconductor thin film transistor.The thickness of source electrode and drain electrode is 50nm.
Electrical testing is carried out to gained organic semiconductor thin film transistor using 4200 characteristic of semiconductor tester of Keithley,
It was found that the device has good field-effect characteristic.It is 2V in grid voltage, under conditions of source-drain voltage is 2V, saturation current is
7.7×10-2Microampere.
The embodiment of the above is only used to explain the present invention, the scope of the present invention is not limited, for this technology
It, certainly can be according to technology contents disclosed in this specification, by way of replacing or changing for the technical staff in field
Other embodiments are made easily, therefore all changes and improvements etc. done in the principle of the present invention and process conditions, it should all wrap
It includes in scope of the present invention patent.
Claims (9)
1. a kind of preparation method of organic semiconductor thin film transistor, which is characterized in that the transistor include from bottom to up according to
Substrate (1), gate electrode layer (2), insulating layer (3) and the active layer (4) of secondary laying lay active electrode on the active layer (4)
(5) and drain electrode (6)；
The preparation of transistor is the following steps are included: organic semiconducting materials and insulating polymer are dissolved into organic solvent, shape
At precursor mixed solution, then by precursor mixed solution rotation Tu on the gate electrode layer (2) of substrate (1), insulation polymerization
Object is in spin-coated thin film bottom and contacts with gate electrode layer (2), is formed insulating layer (3), and it is poly- that organic semiconducting materials are located at insulation
It closes above object, is formed active layer (4), be then dried, source electrode (5) and drain electrode are finally prepared on active layer (4)
(6), organic semiconductor thin film transistor is formed.
2. preparation method according to claim 1, which is characterized in that the substrate (1) is glass or silicon wafer, gate electrode layer
(2) ito thin film or Au, Ag or Al film to be attached on substrate (1).
3. preparation method according to claim 1, which is characterized in that the organic semiconducting materials are that small molecule type is organic
Semiconductor material or conjugated polymer type organic semiconducting materials；Small molecule type organic semiconducting materials be fullerene, pentacene,
Any one in phthalocyanine or metal complex；The conjugated polymer type organic semiconducting materials be polyacetylene or polythiophene and
Any one in its derivative.
4. preparation method according to claim 1, which is characterized in that the insulating polymer be polystyrene, polyphenylene oxide,
Any one in polylactic acid, polymethyl methacrylate, polyetherimide or polybutadiene.
5. preparation method according to claim 1, which is characterized in that the concentration of the precursor mixed solution be 5~
15mg/mL, the mass ratio of organic semiconducting materials and insulating polymer is (3~30) in precursor mixed solution: 100.
6. preparation method according to claim 1, which is characterized in that the organic solvent is chloroform, meta-xylene, two sulphur
Change any one in carbon or o-dichlorohenzene.
7. preparation method according to claim 1, which is characterized in that the speed of the spin coating is 1000~3000rpm, rotation
The time of painting is 30~60s.
8. preparation method according to claim 1, which is characterized in that the temperature of the drying is 50 DEG C~90 DEG C, dry
Time be 1~5h.
9. preparation method according to claim 1, which is characterized in that the drain electrode (6) and source electrode (5) use vacuum
Prepared by thermal evaporation, the material of drain electrode (6) and source electrode (5) is Au.
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| CN109900763A (en) * | 2019-03-07 | 2019-06-18 | 江苏友润微电子有限公司 | Nitrogen dioxide sensor chip based on organic transistor and preparation method thereof |
| CN111978573A (en) * | 2020-08-07 | 2020-11-24 | 清华大学 | Preparation method of fullerene modified polyetherimide polymer material |
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